JP3181501B2 - Processing device and processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a processing apparatus and a processing method.

[0002]

2. Description of the Related Art Generally, in a manufacturing process of a semiconductor or the like, a processing apparatus for performing a predetermined processing by applying a predetermined processing gas to an object to be processed, for example, a semiconductor wafer or an LCD glass substrate, for example, a processing such as etching. , For example, a plasma etching apparatus is widely used. In this type of apparatus, it is desired to improve the technology of a shower head unit for supplying a processing gas in order to uniformly supply a processing gas to an object to be processed and to make the processing uniform. As an example of one of the solutions, Japanese Patent Application Laid-Open
No. 1-64128 is known. According to the technique, the number or the opening area of the processing gas outflow passages provided in the shower head is changed from the central portion to the outer peripheral portion so that the processing gas supplied from the shower head flows in with a uniform flow rate distribution on the opposite surface. Or a cavity is provided in the showerhead, and the shape of the cavity is adjusted so that the conductance of each processing gas outflow path becomes equal, so that uniform plasma is generated in the processing chamber. I was

[0003]

However, as described above, when the number of gas outflow passages is increased toward the outer peripheral direction of the shower head or the opening area of the gas outflow passage is increased, FIGS. 8A and 8B. As shown in (1), the distribution of gas flow per unit area on the opposing surface is not equal between the outer peripheral portion and the central portion, so that it is difficult to make the plasma generated in the processing chamber uniform. Further, even if the hollow portion is provided in the shower head as described above, in the shape shown in FIG. 9, the lengths of the holes of the respective gas outflow passages are equal, and the length from the gas supply pipe to each gas outflow passage is reached. Is different, that is, the distance of each processing gas outflow path is different, and a vortex is generated in the outer peripheral portion as shown in FIG. 9. Therefore, the difference in conductance of each processing gas outflow path is improved, and each outflow path is improved. It is difficult to equalize the gas flow rate in each case and make the plasma generated in the processing chamber uniform, and such non-uniform plasma may reduce the yield of the object to be processed and the semiconductor wafer. Also,
The problem at the time of gas supply as described above is that the temperature of the semiconductor wafer placed on the mounting table is adjusted, so that the heat is transferred from the heat transfer gas outflow passage formed on the mounting table surface toward the back surface of the semiconductor wafer. It also occurs when a hot gas is supplied, and it is difficult to make the temperature distribution uniform over the entire surface of the object to be processed, and the unevenness of the temperature distribution may reduce the yield of semiconductor wafers.

The present invention has been made under such circumstances, and an object of the present invention is to control a flow rate distribution of a supplied gas when a predetermined gas is applied to an object to be processed to perform a predetermined process. An object of the present invention is to provide a processing apparatus capable of operating uniformly.

[0005]

According to a first aspect of the present invention, there is provided a processing chamber having a support for supporting a processing object, and a processing gas provided in the processing chamber from a side opposed to the processing object. a processing gas supply unit for supplying, provided in the processing gas supply unit, setting the process gas on the surface of the processing gas supply unit
A plurality of processing gas supply paths for discretely supplying the processing object from the plurality of processing gas blowout ports to the processing object side, wherein the processing gas supply paths are arranged from a center with respect to the processing object. The length is short toward the outer circumference and
The plurality of processing gas blows are formed to increase in diameter.
The outlets have substantially the same area.

According to a second aspect of the present invention, there is provided a processing chamber provided with a support for supporting a processing object, and a processing gas for supplying a processing gas from a side provided in the processing chamber and facing the processing object.
And a supply unit, wherein the inside of the processing gas supply unit is
A diffusion chamber for diffusing the processing gas is provided, and a wall of the diffusion chamber facing the object to be processed is provided with the processing gas in front.
A plurality of processing gases provided on the surface of the processing gas supply unit;
A plurality of processing gas supply passage for supplying the air outlet discretely to said treated body side, wherein provided to its length toward the outer periphery direction from the center with respect to the target object becomes shorter, the said diffusion chamber surface of said wall having a plurality of processing gas supply path is provided inclined so that the distance between the object to be processed toward the outer peripheral direction from the center with respect to the object to be processed is shortened, the plurality of processing gas supply path the formed such that the diameter toward the outer peripheral direction from the center with respect to the workpiece is increased, is characterized in that the area of the plurality of processing gas outlet are each substantially identical.

According to a third aspect of the present invention, there is provided a processing apparatus for supporting an object to be processed on a support and treating the object in a reduced-pressure atmosphere, a means provided on the support for heating and / or cooling the support, And a heat transfer gas provided between the object support surface of the support and the object to be processed.
A plurality of heat transfer gas outlets provided above
; And a heat transfer gas supply line, provided their multiple heat transfer gas
Feeding path toward the outer peripheral direction from the center with respect to the workpiece its
The plurality of heat transfer gases are configured to have a shorter length.
Supply path, the formed such that the diameter toward the outer peripheral direction from the center with respect to the workpiece is increased, the plurality of heat transfer gas
The area of the air outlet is substantially the same.

According to a fourth aspect of the present invention, there is provided a processing apparatus for supporting an object to be processed on a support and treating the support in a reduced-pressure atmosphere, wherein the support comprises means for heating and / or cooling the support;
The material is supplied between the processing object support surface of the support and the processing object.
That a diffusion chamber for diffusing the heat transfer gas is provided, heat transfer on the wall on the side facing the object to be processed in the diffusion chamber, which is provided with the heat transfer gas to the workpiece support surface on Hot gas blowing
A plurality of heat transfer gas supply passage to supply feed from the mouth, the length thereof toward the outer periphery direction from the center with respect to the workpiece is configured to <br/> so that a short, the plurality of heat transfer of the diffusion chamber Hot gas
Surface of the supply channel is provided wherein wall inclined the like a distance between the object to be processed toward the outer peripheral direction from the center with respect to the target object becomes shorter, the plurality of heat transfer gas supply passage, before
The heat transfer gas outlets are formed so as to increase in diameter from the center to the object to be processed toward the outer periphery, and the areas of the plurality of heat transfer gas outlets are substantially the same.

According to a fifth aspect of the present invention, there is provided a processing apparatus for supporting an object to be processed on a support and treating the object in a reduced-pressure atmosphere, wherein the support comprises means for heating and / or cooling the support;
The material is supplied between the processing object support surface of the support and the processing object.
That a diffusion chamber for diffusing the heat transfer gas is provided, heat transfer on the wall on the side facing the object to be processed in the diffusion chamber, which is provided with the heat transfer gas to the workpiece support surface on Hot gas blowing
A plurality of heat transfer gas supply passage to supply feed from the mouth, the length thereof toward the outer periphery direction from the center with respect to the workpiece is configured to <br/> so that a short, the plurality of heat transfer of the diffusion chamber Hot gas
Surface of the supply channel is provided wherein wall inclined the like a distance between the object to be processed toward the outer peripheral direction from the center with respect to the workpiece is shortened, the plurality of heat transfer gas outlet
The diameters are substantially the same and the heat transfer gas supply path
Is smaller than the diameter .

[0010]

[0011]

According to the first aspect of the present invention, a plurality of processing gases are supplied to the processing gas supply section provided on the side facing the object to be processed.
The supply path is from the center to the workpiece to the outer circumference
Are formed so that the length is short and the diameter increases.
In addition, the areas of multiple processing gas outlets are almost the same.
Therefore , the processing gas can be supplied such that the flow rate distribution per unit area on the surface of the processing object becomes uniform .

According to the second aspect of the present invention, a plurality of processing gases
The wall surface on which the supply path is formed is inclined so that the distance from the central axis to the object to be processed becomes smaller from the central axis toward the outer peripheral direction, and the area of the plurality of processing gas outlets is reduced .
Since the processing gas in the diffusion chamber is substantially the same,
As shown in (1), it is possible to smoothly diffuse from the center to the outward direction, and the flow rate distribution per unit area on the surface of the object to be processed can be further uniformed. In particular, in a viscous region (a pressure region of 0.75 Torr or more), the gas has a property of flowing along the wall, so this effect is remarkable .

According to the third aspect of the present invention, the plurality of heat transfer gas supply passages provided on the support for supplying the heat transfer gas are formed such that their lengths become substantially shorter from the center toward the outer periphery. And the area of multiple heat transfer gas outlets
Since they are almost the same, the heat transfer gas can be supplied so that the flow rate distribution per unit area on the back surface of the object to be processed becomes uniform .

According to the invention of claim 4, the plurality of heat transfer gases
The wall surface on which the supply path is formed is inclined so that the distance from the central axis to the object to be processed becomes smaller from the central axis toward the outer peripheral direction, and the area of the plurality of heat transfer gas outlets is reduced .
Since they are almost the same, the processing gas in the diffusion chamber is
As shown in (2), it is possible to smoothly diffuse from the center to the outward direction, and the flow rate distribution per unit area on the back surface of the processing object can be further uniformed. In particular, in a viscous region (a pressure region of 0.75 Torr or more), the gas has a property of flowing along the wall, so that this effect is remarkable .

According to the fifth aspect of the present invention, the plurality of heat transfer gases
The wall surface on which the supply path is formed is inclined so that the distance from the central axis to the object to be processed becomes smaller from the central axis toward the outer peripheral direction, and the area of the plurality of heat transfer gas outlets is reduced .
Since the processing gases in the diffusion chamber are substantially the same,
As shown in (2), it is possible to smoothly diffuse from the center to the outward direction, and the flow rate distribution per unit area on the back surface of the processing object can be further uniformed. In particular, in a viscous region (a pressure region of 0.75 Torr or more), the gas has a property of flowing along the wall, so that this effect is remarkable .

[0017]

[0018]

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma etching apparatus according to one embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view of a plasma etching apparatus. This plasma etching apparatus has a processing chamber 1 airtightly formed of a material such as aluminum. The processing chamber 1 is electrically grounded. A support 3 is provided at the bottom of the processing chamber 1 via an insulating plate 2 made of ceramic or the like. The insulating plate 2 is provided to electrically insulate the processing chamber 1 from the support table 3.
Inside the support 3, a cooling chamber 4 such as a cooling jacket is provided. Further, a refrigerant introduction pipe 5 for introducing a refrigerant and a refrigerant discharge pipe 6 for discharging a refrigerant are connected to the cooling chamber 4 so that a refrigerant for cooling the support base 3 to a desired temperature can be circulated. ing.

A lower electrode 7 made of a material such as aluminum is detachably provided on the upper surface of the support 3. On the upper surface of the lower electrode 7, there is provided an electrostatic chuck 8 for attracting and holding, for example, a semiconductor wafer W, which is an object to be processed, by Coulomb force. This electrostatic chuck 8
For example, a configuration is adopted in which a conductive layer 8a made of electric field foil copper is sandwiched from both sides by an insulating layer 8b made of, for example, a polyimide film or ceramic, and bonded by an adhesive. A DC power supply 10 provided outside the processing chamber 1 is connected to the conductive layer 8a via a supply lead wire 9, and when a DC voltage for electrostatic chuck is applied to the conductive layer 8a by the power supply 10, polarization is caused. The wafer W is attracted and held on the electrostatic chuck 8 by the Coulomb force. The lower electrode 7 has a high frequency power supply 11 provided outside the processing chamber 1.
, For example, a 13.56 MHz frequency power is supplied to the matching circuit 12 and the blocking capacitor 13.
Via the power supply line 14.

The support 3 and the lower electrode 7
A heat transfer gas supply path 16 for supplying a heat transfer medium for transferring the temperature of the cooling chamber 4 to the wafer W, for example, an inert gas helium gas from a heat transfer gas supply source 15 is provided. A large number of heat transfer gas supply passages 16 are provided through the lower electrode 7 and the electrostatic chuck 8 through a heat transfer gas dispersion chamber 17 provided inside the lower electrode 7. It leads to the gas outflow channel 18. That is,
The heat transfer gas from the heat transfer gas supply source 15 passes through the heat transfer gas supply path 16, and temporarily
And then branches into the heat transfer gas outflow passages 18, respectively, and the wafer W placed on the upper surface of the electrostatic chuck 8 through a heat transfer gas outlet 19 provided on the surface of the electrostatic chuck 8. It is configured to be supplied to the back surface. The heat transfer gas supplied to the rear surface of the wafer W as described above efficiently transfers the heat of the lower electrode 7 to the wafer W. That is, even if the inside of the processing chamber 1 is in a vacuum atmosphere, the heat of the support table 3 can be transmitted to the wafer W. In order to more efficiently transfer the heat of the support 3 to the wafer W, it is desirable to supply a transfer gas to the gap between the support 3 and the lower electrode 7 as described above. An annular focus ring 20 is provided around the upper edge of the lower electrode 7 so as to surround the wafer. The focus ring 20 is provided by being selected from an insulating material or a conductive material, for example, SiC or C, and is used for adjusting a plasma region.

On the other hand, an upper electrode 21 which is electrically insulated from the processing chamber 1 is provided above the processing chamber 1. A processing gas diffusion chamber 22 is formed inside the upper electrode 21, and a gas supply pipe 24 is connected to a central portion of the processing gas diffusion chamber 22 via a gate valve 23. The gas supply pipe 24 is connected to a gas supply source 25. A mass flow controller 26 is provided between the gas supply source 25 and the gate valve 23, and a predetermined flow rate of a predetermined processing gas, for example, An etching gas such as chlorine can be supplied to the processing gas diffusion chamber 22.

A processing gas supply path 27 for introducing a processing gas from the processing gas diffusion chamber 22 into the processing chamber is formed below the upper electrode 21. As shown in FIG. 2, the supply path 27 extends from the central axis O to the upper electrode 2.
1 has a length ln (n = 0, 1, 2, 2,.
3. . . . n) is configured to be shortened at a predetermined rate. With such a configuration, the processing gas introduced through the processing gas supply pipe 24 in the processing gas diffusion chamber 22 flows out of the processing gas depending on the difference in the distance to the processing gas supply path 27. The difference in conductance for each process gas can be reduced, and the flow rate for each processing gas supply path 27 can be made uniform. In this method, since the area of the processing gas outlet 28 in each supply path 27 can be unified, a non-uniform flow rate distribution of the processing gas per unit area on the wafer W due to the difference in the size of the blowing diameter occurs. Without this, a uniform plasma can be generated.

Further, as shown in FIG. 3, the processing gas supply passage 2 has a diameter Dn (n = 0, 1, 2, 3...) From the central axis O toward the outer periphery of the upper electrode 21. n) may be configured to increase at a predetermined rate. By adjusting the diameter of the processing gas supply path 27 in this manner, the difference in conductance between the processing gas outflow paths can be further reduced, and the flow rate in each processing gas supply path 27 can be made uniform. However, if the processing gas outlets 28 of the processing gas supply paths 27 have different areas, the gas flow rates of the processing gas supply paths 27 can be equalized as described above. Since the flow rate distribution per unit area on the object to be processed becomes non-uniform, it is necessary to equalize the area of the processing gas outlet 28 in each processing gas supply path 27 as shown in FIG.

Further, as shown in FIG.
The electrode plate 29 may be provided on the surface facing the wafer W. The electrode plate 29 is formed with a gas outlet 30 communicating with the processing gas supply path 27.
Is formed to be substantially the same as the diameter of the processing gas supply path 27, and preferably smaller than that. When the electrode plate 29 is provided on the upper electrode 21 in this manner, the upper electrode 2
1 becomes difficult to be exposed, and it becomes possible to suppress sputtering or the like due to ions in the plasma during plasma generation. Further, when the diameter of each processing gas supply path 27 is different, the processing of each processing gas supply path 27 is performed such that the area of the processing gas outlet 28 is constant for each processing gas supply path 27 as shown in FIG. Although it is difficult to perform the above, each gas outlet 30 has the same diameter as the electrode plate 2 having the same diameter.
The use of 9 makes it possible to obtain the same effect as when the area of the processing gas outlet 28 in the processing gas supply path 27 is made constant.

An exhaust pipe 31 is provided at the bottom of the processing chamber 1 shown in FIG. 1, and the processing gas in the processing chamber 1 is exhausted from an exhaust pump 32 via the exhaust pipe 31. A pressure gauge 33 for measuring the degree of vacuum in the processing chamber 1 is provided at a side wall in the processing chamber 1, for example, at a position corresponding to between the upper electrode 21 and the lower electrode 7. Further, the mass flow controller 26, the pressure gauge 33, and the high frequency power supply 11
Is connected to the control means 35 via the control unit, and performs predetermined control for each of these devices.

Next, the operation of the plasma etching apparatus shown in FIG. 1 will be described. The wafer W is placed on the electrostatic chuck 8 from a load lock chamber (not shown) through a gate valve (not shown). Thereafter, the gate valve is closed, and the inside of the processing chamber 1 is evacuated so as to reach a predetermined degree of vacuum, for example, 0.1 mTorr. Further, an electrostatic chuck voltage, for example, a DC voltage of 2.0 kv is applied from the DC power supply 10 to the conductive layer 8a in the electrostatic chuck sheet 8, and the wafer W is softly attracted to the electrostatic chuck 8 by Coulomb force due to polarization. Hold. Then, while adjusting the flow rate of the etching gas by the mass flow controller 26, the etching gas is introduced into the processing chamber 1 through the processing gas supply path 27 formed in the lower portion of the upper electrode 21.
Then, a high frequency voltage of, for example, 13.56 MHz is applied to the lower electrode 7 from the high frequency power supply 11. As a result, plasma is generated between the upper electrode 21 and the lower electrode 7, and the wafer W is etched by the plasma. The upper electrode 21 and the lower electrode 7
During this time, a current flows, and a strong electrostatic chuck is realized.

This plasma reduces the difference in conductance for each processing gas outlet path by adjusting the distance of each processing gas supply path 27 without changing the area of the processing gas blowout port 28, thereby reducing each processing gas. Gas supply path 27
Since the difference in the flow rate of the processing gas blown from the wafer W is reduced, the processing gas is uniformly generated between the upper electrode 21 and the lower electrode 7 at least on the processing surface of the wafer W. Therefore, the wafer W is etched very uniformly by the uniform plasma. Further, as shown in FIG. 2, if the diameter of the processing gas supply path 27 is increased at a predetermined rate from the central part toward the outer peripheral part, the difference in conductance between the processing gas outflow paths can be further reduced. Processing gas can be supplied at a more uniform flow density. Further, as shown in FIG. 3, if the electrode plate 29 is used for the upper electrode 21, the area of the processing gas outlet 28 of each processing gas supply path 27 can be made constant without making the processing of the processing gas supply path 27 difficult. The same effect as described above is obtained, and the surface of the upper electrode 21 is protected by the electrode plate 29, so that sputtering or the like due to ions in the plasma can be suppressed, and the generation of particles due to the sputtering can be suppressed. be able to.

Further, during the etching process, the wafer W is heated by the plasma, but the wafer W is cooled by the cold heat of the refrigerant in the cooling chamber 4 in the support 3. Further, in order to efficiently transfer the heat of the coolant to the wafer W despite the vacuum atmosphere, an inert gas such as helium is used as a heat transfer gas between the back surface of the wafer W and the electrostatic chuck 8. Is supplied through a heat transfer gas outflow passage 18 formed in the electrostatic chuck 8. As in the case of the processing gas supply path 27, the heat transfer gas is also supplied uniformly over the entire rear surface of the wafer W, as shown in FIG.
By adjusting the length of the heat transfer gas outflow path 18 and the conductance of the heat transfer gas outflow path as shown in FIG.
Since the heat transfer gas is supplied uniformly over the entire area of the back surface, the temperature distribution of the wafer W becomes uniform, and the yield can be improved. Further, as a means for uniformly supplying the heat transfer gas to the entire back surface of the wafer W, for example, as shown in FIG. 6, the area of the heat transfer gas outlet 19 is made constant, and the diameter of the heat transfer gas outflow passage 18 is increased. However, a configuration may be employed in which the height increases outward from the center at a constant rate. By adjusting the diameter in this way, it is possible to adjust the difference in conductance which cannot be adjusted by adjusting the length of the heat transfer gas outflow passage 18, thereby further improving the yield of the wafer W. Becomes possible.

The present invention is not limited to the embodiment described above. For example, in the above embodiment, the surface on which the processing gas supply passage 27 in the processing gas diffusion chamber 22 is formed is inclined from the central axis O toward the outer periphery. Length l of supply path 27
A similar effect can be obtained if n is configured to decrease in the outer peripheral direction. The same can be said for the heat transfer gas outflow passage 18.

In the above embodiment, the processing gas supply path 27
Is configured such that the length ln decreases from the center of the wafer W toward the outer periphery, but even if not configured, the bottom wall in the processing gas diffusion chamber 22, ie, the processing gas supply path If the surface on which 27 is formed is inclined such that the distance from the center to the outer periphery of the wafer W becomes shorter with respect to the wafer W, the processing gas flows smoothly from the center to the outer periphery in the processing gas diffusion chamber 22. Therefore, the processing gas can be uniformly discharged through each processing gas supply path 27. The same can be said for the heat transfer gas dispersion chamber 17. The ceiling wall in the heat transfer gas dispersion chamber 17, that is, the surface on which the heat transfer gas outflow passage 18 is formed is positioned from the center to the outer periphery of the wafer W. If the heat transfer gas is inclined so that the distance to the wafer W becomes shorter toward the outer periphery, the heat transfer gas diffuses smoothly from the center to the outer periphery in the heat transfer gas dispersion chamber 17. It is possible to uniformly flow out through the outflow channel 18. Further, it is preferable that the above-mentioned inclination is provided so that the height ratio between the central portion and the outer peripheral portion of the processing gas diffusion chamber 22 and the heat transfer gas dispersion chamber 17 is 1: 3 or less.

As shown in FIG. 7, a partition plate 36 may be provided in the processing gas diffusion chamber 22 in the upper electrode 21. In this case, the holes 37 formed in the partition plate 36
The same effect can be obtained as long as the above is configured so as to satisfy the above-described conditions regarding the processing gas supply path 27. However, the same can be said for the case where the partition plate is provided in the heat transfer gas dispersion chamber 17 of the lower electrode 7.

The present invention is not limited to a plasma etching apparatus, but may be any other apparatus as long as it is an apparatus for uniformly introducing a processing gas into a processing chamber or an apparatus for supplying a heat transfer gas to the back surface of a workpiece such as a wafer W. Needless to say, the present invention can be applied to, for example, a CVD apparatus, a sputtering apparatus, an ion implantation apparatus, and other processing apparatuses.

[0035]

According to the first aspect of the present invention, the processing gas can be supplied onto the surface of the object to be processed so that the flow rate distribution becomes uniform, so that a uniform plasma can be generated in the processing chamber. Thus, the yield of the object to be processed can be improved .

According to the second aspect of the present invention, since the flow rate distribution per unit area on the surface of the processing object can be made more uniform, uniform plasma can be generated in the processing chamber. Thus, the yield of the object to be processed can be improved .

According to the third aspect of the present invention, since the heat transfer gas can be supplied so that the flow rate distribution becomes uniform over the entire back surface of the object, the difference in temperature distribution over the entire object is reduced. Accordingly, the yield of the object to be processed can be improved .

According to the fourth aspect of the present invention, the flow rate can be supplied so that the flow rate distribution becomes uniform over the entire rear surface of the object to be processed, so that the yield of the object to be processed can be further improved .

According to the fifth aspect of the present invention, since the flow rate can be supplied so that the flow rate distribution becomes uniform over the entire back surface of the object, the yield of the object can be further improved .

[0040]

[0041]

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a plasma etching apparatus showing one embodiment of the present invention. FIG. 2 is a cross-sectional view of a main part of an upper electrode of the device. FIGS. 3, 4 and 7 are cross-sectional views of a main part of a modification of the upper electrode of the above device.
5 and 6 are cross-sectional views of a main part of a modification of the lower electrode of the above device. 8 and 9 are cross-sectional views of main parts of a conventional upper electrode and lower electrode.

[Explanation of symbols]

Reference Signs List 1 processing chamber W wafer (object to be processed) 16 heat transfer gas dispersion chamber (diffusion chamber for diffusing heat transfer gas) 17 heat transfer gas outflow path (a plurality of holes for supplying heat transfer gas) 18 heat transfer gas outlet ( Gas processing port) 22 Processing gas diffusion chamber (diffusion chamber for diffusing processing gas) 27 Processing gas supply path (a plurality of holes for supplying a predetermined gas) 28 Processing gas blowing port (gas blowing port)

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/3065 C23C 14/34 H01L 21/205

Claims (5)

(57) [Claims] And 1. A workpiece processing chamber including a support for supporting, a processing gas supply unit for supplying a processing gas from the side facing the workpiece provided in the processing chamber, the processing
Provided sense gas supply unit, the process gas the process gas
Multiple processing gas outlets provided on the surface of the supply section
Wherein and a plurality of processing gas supply path for supplying discretely to be processed side of the plurality of processing gas supply path, the outer peripheral direction from the center with respect to the workpiece, the length A processing apparatus which is formed so as to be short and has an increased diameter , and wherein the plurality of processing gas outlets have substantially the same area. 2. A process comprising a support for supporting an object to be processed.
Chamber and the object to be processed provided in the processing chamber.
SideAnd a processing gas supply unit for supplying a processing gas from
And The processing gas is diffused into the processing gas supply unit.
Diffusion room Is provided, facing the object to be processed in the diffusion chamber.
On the side wall, The processing gasToOf the processing gas supply unit
From multiple processing gas outlets provided on the surfaceSaid
A plurality of discrete supplies to the workpieceProcessing gas supply
RoadBut,From the center to the object to be processed toward the outer periphery
handIts lengthButShortProvided in the diffusion chamber.
The pluralityProcessing gas supply pathWas providedSaidFront of the wall
The object to be processed is moved from the center to the outer peripheral direction.
Inclined so as to shorten the distance to the processing object;Processing gas supply pathIsSaidMedium for workpiece
From the center toward the outer peripheryDiameterFormed to increase
Said,Multiple processing gas outletsArea is almost the same
A processing device, characterized in that: 3. A processing apparatus for supporting an object to be processed on a support and treating the object in a reduced-pressure atmosphere, comprising: means provided on the support for heating or / and cooling the support; and means provided on the support. The heat transfer gas is transferred between the support surface of the support and the support surface of the support provided on the support surface of the support.
A plurality of heat transfer gas supply paths to be supplied from the hot gas outlet , and the plurality of heat transfer gas supply paths are configured such that their lengths become shorter from the center to the processing object toward the outer periphery. , said plurality of heat transfer gas supply passage, the formed such that the diameter toward the center to the outer circumferential direction with respect to the object to be processed is increased, the area of the plurality of heat transfer gas outlet are each substantially the same Characteristic processing device. Wherein supporting the workpiece on the support, in the processing apparatus for processing a reduced pressure atmosphere, said the support and means for heating and / or cooling the support, the treatment of the support
A diffusion chamber for diffusing a heat transfer gas supplied between the physical support surface and the object to be processed is provided, and a wall of the diffusion chamber facing the object to be processed includes the heat transfer gas. The object support
A plurality of heat transfer gas supply passage to supply the sheet from the port balloon heat transfer gas provided on the lifting surface, its length is configured to be shorter toward the outer circumferential direction from the center with respect to the workpiece, the diffusion surface of the wall in which the plurality of heat transfer gas supply passage chamber is provided inclined so that the distance between the object to be processed toward the outer peripheral direction from the center with respect to the object to be processed is shortened, the plurality of heat transfer hot gas supply passage, the formed such that the diameter toward the outer peripheral direction from the center with respect to the workpiece is increased, the processing unit, wherein the area of said plurality of heat transfer gas outlet are each substantially the same . 5. supports the workpiece to the support, in a processing apparatus for processing a reduced pressure atmosphere, said the support and means for heating and / or cooling the support, the treatment of the support
A diffusion chamber for diffusing a heat transfer gas supplied between the physical support surface and the object to be processed is provided, and a wall of the diffusion chamber facing the object to be processed includes the heat transfer gas. The object support
A plurality of heat transfer gas supply passage to supply the sheet from the port balloon heat transfer gas provided on the lifting surface, its length is configured to be shorter toward the outer circumferential direction from the center with respect to the workpiece, the diffusion surface of the wall in which the plurality of heat transfer gas supply passage chamber is provided inclined so that the distance between the object to be processed toward the outer peripheral direction from the center with respect to the object to be processed is shortened, the plurality of heat transfer A processing apparatus, wherein the diameters of the hot gas outlets are substantially the same and smaller than the diameter of the heat transfer gas supply path .