JP3178874B2 - Method and apparatus for measuring amplitude of energy transducer - Google Patents

Method and apparatus for measuring amplitude of energy transducer

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Publication number
JP3178874B2
JP3178874B2 JP35554191A JP35554191A JP3178874B2 JP 3178874 B2 JP3178874 B2 JP 3178874B2 JP 35554191 A JP35554191 A JP 35554191A JP 35554191 A JP35554191 A JP 35554191A JP 3178874 B2 JP3178874 B2 JP 3178874B2
Authority
JP
Japan
Prior art keywords
capillary
amplitude
measuring
energy transducer
head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP35554191A
Other languages
Japanese (ja)
Other versions
JPH04319627A (en
Inventor
フェルバー アルミン
ネールス ヴァルター
Original Assignee
エセック トレーディング エスアー
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Application filed by エセック トレーディング エスアー filed Critical エセック トレーディング エスアー
Publication of JPH04319627A publication Critical patent/JPH04319627A/en
Application granted granted Critical
Publication of JP3178874B2 publication Critical patent/JP3178874B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
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    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
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    • HELECTRICITY
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    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
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    • H01L2924/19042Component type being an inductor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

A process and a device for carrying out the process for the ultrasonically bonding wire connection of electrical circuits on metal system carriers are proposed. <??>The device (100) essentially comprises a bonding-head means (50) with an energy transducer (50) arranged on it. The energy transducer (50) is fed into the respective process point (P) of the system carrier (46) and a first voltage is applied to it to produce a longitudinal oscillation amplitude. A measuring head (55) arranged in a fixed position on a machine base (60) is allocated to the bonding-head means (50). <??>The measuring head (55) has an optical/electrical sensor (52) by means of which the instantaneous amplitude of the longitudinal oscillation as well as the extent of the infeed movement of the bonding-head device (50) are measured, and a correction factor is determined by calculation from the measured variables determined and is calibrated with the correction factor of the first ultrasonic value for the oscillation amplitude of the energy transducer (25). <IMAGE>

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は金属リードフレームに対
し、超音波による電気回路の接触結線を施すため、加工
点に向かって対応して設けられたボンディングヘッド装
置と共に送りが与えられ、機械的縦振動を発生させるた
めの電圧を発生させる第一の入力超音波値が与えられる
エネルギー・トランスデューサの振幅を測定する方法及
び装置に関する。
BACKGROUND OF THE INVENTION The present invention relates to a method in which a metal lead frame is contacted with a bonding head device provided correspondingly toward a processing point in order to perform contact connection of an electric circuit by ultrasonic waves. A method and apparatus for measuring the amplitude of an energy transducer given a first input ultrasound value to generate a voltage for generating longitudinal vibration.

【0002】[0002]

【従来の技術】半導体の製造において、ワイヤの結線は
公知のサーモソニック工程によって行なわれる。この工
程では、ワイヤ溶接のために、エネルギー・トランスデ
ューサの前端部に取り付けられたワイヤを案内する毛管
が接触点または接合点に向かって移送されべき必要な超
音波エネルギーを供給する。超音波エネルギーの移送は
種々の影響因子、例えばエネルギー・トランスデューサ
を固定する際に、特に起こりがちな機械的変化に依存し
ている。その他、結線に影響を与える因子としては、毛
管の磨耗の結果、毛管を支持具に交換して取り付けなけ
ればならなず、この取り付け時に結線に影響を与える因
子が発生し、また、例えば新たに装着される毛管に関す
るわずかな製造上の差異によっても発生する。
2. Description of the Related Art In the manufacture of semiconductors, the connection of wires is performed by a known thermosonic process. In this process, a wire-guiding capillary attached to the front end of the energy transducer supplies the necessary ultrasonic energy to be transferred towards the contact or junction for wire welding. The transfer of ultrasonic energy depends on various influencing factors, such as the mechanical changes that are particularly likely to occur in securing the energy transducer. In addition, as a factor that affects the connection, as a result of the wear of the capillary, the capillary must be replaced with a support and attached, and at the time of this attachment, a factor that affects the connection is generated. It is also caused by slight manufacturing differences with respect to the capillaries to be fitted.

【0003】[0003]

【発明が解決しようとする課題】本発明は電気回路の結
線用として構成されたエネルギー・トランスデューサの
毛管の先端における振幅の計測をその課題として取り扱
う。本発明の課題は、所定の因子によって各々の場合に
達成されるボンディングヘッド装置の絶対送り運動及び
絶対縦振動がそれぞれ計測され、その計測結果が各場合
の要件に対応する超音波エネルギーの決定に用いられる
ようにした計測方法とその方法を実施する装置を提供す
ることである。
SUMMARY OF THE INVENTION The present invention addresses the problem of measuring the amplitude at the tip of a capillary of an energy transducer configured for connection of an electrical circuit. An object of the present invention is to measure the absolute feed motion and the absolute longitudinal vibration of the bonding head device, which are achieved in each case by a predetermined factor, respectively, and use the measurement results to determine ultrasonic energy corresponding to the requirements in each case. It is an object of the present invention to provide a measuring method to be used and an apparatus for implementing the method.

【0004】[0004]

【課題を解決するための手段】本発明の方法によれば、
エネルギー・トランスデューサの縦振動の瞬間振幅とボ
ンディングヘッド装置の所定の送りが計測され、これら
の計測値から補正係数が決定されて第一超音波値の校正
に使用され、その結果としてエネルギー・トランスデュ
ーサの振幅が校正される。
According to the method of the present invention,
The instantaneous amplitude of the longitudinal vibration of the energy transducer and the predetermined feed of the bonding head device are measured, and a correction coefficient is determined from these measured values and used to calibrate the first ultrasonic value. The amplitude is calibrated.

【0005】上記方法を実施する本発明による装置は、
金属リードフレーム板用の搬送板を備えた支持要素と、
ボンディングヘッド装置とから成り、このボンディング
ヘッド装置は、その上に設けられた回路結線のためのエ
ネルギー・トランスデューサと共にリードフレーム板の
加工点に向かって送り込み可能となっている装置であっ
て、コンピュータと動作可能に接続され、少なくとも一
つの光学的/電気的センサを備えた測定ヘッドが設けら
れ、このセンサはボンディングヘッド装置の送りパス
と、コンピュータの計測値によって励起可能なエネルギ
ー・トランスデューサの縦振動に対する計測値との両者
を決定することが可能な光学的動作範囲を有することを
特徴とする。
[0005] An apparatus according to the present invention for implementing the above method comprises:
A support element with a transport plate for the metal leadframe plate,
A bonding head device, which is capable of being fed toward a processing point of a lead frame plate together with an energy transducer provided on the bonding head device for circuit connection. A measuring head, operatively connected and provided with at least one optical / electrical sensor, is provided for controlling the feed path of the bonding head device and the longitudinal vibration of the energy transducer excitable by computer measurements. It is characterized by having an optical operating range in which both the measured value and the measured value can be determined.

【0006】[0006]

【実施例】本発明の他の特徴は図に関して述べる以下の
記載及び請求の範囲から知ることができる。
BRIEF DESCRIPTION OF THE DRAWINGS Other features of the invention can be gleaned from the following description and the claims, which refer to the figures.

【0007】以下、図を参照して本発明を詳述する。Hereinafter, the present invention will be described in detail with reference to the drawings.

【0008】本発明を説明するために、図1は半導体結
線工程に使用する装置すなわちワイヤー・ボンダー10
0をそのシステム全体の概観図として斜視図の形で示し
ている。装置100は電子部品に対する回路の超音波に
よる接触結線用として使用され、本質的にはボンディン
グヘッド装置50、対応して組み合わされたボンディン
グワイヤ・クランプ装置30を有する接触部材20及び
略図的に描かれているボンディングワイヤ供給装置40
とから成っている。
To explain the present invention, FIG. 1 shows an apparatus or a wire bonder 10 used in a semiconductor connection process.
0 is shown in a perspective view as an overview of the entire system. The device 100 is used for ultrasonic contact connection of a circuit to an electronic component, and is essentially depicted by a bonding head device 50, a contact member 20 having a correspondingly combined bonding wire and clamp device 30 and a schematic diagram. Bonding wire supply device 40
And consists of

【0009】また、図1は図示しない押え装置のための
押え板45を示しており、これによって加工点Pと共に
正確に位置決めされる金属リードフレーム板46が位置
的に安定して搬送板47上に保持される。
FIG. 1 shows a holding plate 45 for a holding device (not shown), whereby a metal lead frame plate 46 which is accurately positioned together with a processing point P is stably positioned on a transfer plate 47. Is held.

【0010】凹部51を備えた測定ヘッド55は接触部
材20と組み合わされ、図示しないねじ結合またはその
種の他のものによって装置100の支持要素60に固定
さる。
The measuring head 55 with the recess 51 is combined with the contact member 20 and fixed to the support element 60 of the device 100 by a screw connection or the like, not shown.

【0011】測定ヘッド55の凹部51にある二ヶ所の
離間した壁51’、52”(図2)の間にはエネルギー
・トランスデューサ25の毛管27が接触部材20と動
作的関連を持って設けられている。接触部材20はエネ
ルギー・トランスデューサ25(図1)と共に、軸Zに
関して矢印Z’方向に枢動可能に構成されている。簡単
のために、以後の記載においてはエネルギー・トランス
デューサ25をトランスデューサ25と呼称する。
A capillary 27 of the energy transducer 25 is provided in operative association with the contact member 20 between two spaced apart walls 51 ', 52 "(FIG. 2) in the recess 51 of the measuring head 55. The contact member 20, together with the energy transducer 25 (FIG. 1), is configured to be pivotable in the direction of the arrow Z 'with respect to the axis Z. For simplicity, in the following description, the energy transducer 25 will be referred to as the transducer. Called 25.

【0012】測定ヘッド55には、例えば光学的/電子
的に作動するセンサ52が設けられている。センサ52
は実質上送信部52’と、これに対応する位置にある受
信部52”を含んでいる。センサ52の光学的動作範
囲、即ち測定範囲はボンディングヘッドの送り込みパス
と、計測されるトランスデューサ25の縦振動量との両
者をカバーするように範囲設定が行なわれる。送り込み
パスは毛管27の超音波振幅の数倍、例えば10倍に対
応している。毛管27の相対運動(縦振動)は装置のベ
ースとして構成されている支持要素60に固定された測
定ヘッド55によって計測される。
The measuring head 55 is provided with, for example, an optically / electronically operated sensor 52. Sensor 52
Includes a transmitter 52 'and a receiver 52 "in a corresponding position. The optical operating range of the sensor 52, ie, the measuring range, is the feed path of the bonding head and the transducer 25 to be measured. The range is set so as to cover both the longitudinal vibration amount and the feed path corresponds to several times, for example, 10 times, the ultrasonic amplitude of the capillary 27. The relative movement (longitudinal vibration) of the capillary 27 is determined by the apparatus. Is measured by a measuring head 55 fixed to a supporting element 60 configured as a base of the measuring element 55.

【0013】図1に示されている装置100の互いに動
作可能に接続された個々の要素について、以下に説明す
る。ボンディングヘッド装置50は本質的にはケース状
の支持要素15を含んでいる。この支持要素15は対応
して設けられた図示しない駆動装置によって、座標系K
に従ってX方向及びY方向の何れか一方または両方向に
平面的に調整が可能である。支持要素15は予め空気圧
を調整することができる図示しないエア・クッション・
ベアリングと共に滑り板16に対抗して設けられるの
で、滑り板16の滑り面17上で自由に支承される形で
移動可能に載置される。支持要素15は接触部材20並
びにアーム35を受けて、それを保持する。アーム35
の前端部には、対応して設けられたボンディングワイヤ
案内部材37と、リードフレーム板46の加工点Pに向
けられた光学的センサ36が装着される。支持要素15
と動作可能に接続されている図示しない駆動装置に対す
る対応直流励起によって、X方向およびY方向の何れか
一方または両方向への支持要素15の運動が起こされ
る。上記のボンディングヘッド装置50に対応する好ま
しい構成実施例は欧州公開特許公報第0317787号
から公知である。
The individual components operably connected to each other of the apparatus 100 shown in FIG. 1 are described below. The bonding head device 50 includes a support element 15 which is essentially a case. The supporting element 15 is moved by a corresponding driving device (not shown) to a coordinate system K.
Can be adjusted planarly in one or both of the X direction and the Y direction. The support element 15 is provided with an air cushion (not shown) capable of adjusting the air pressure in advance.
Since it is provided together with the bearing against the sliding plate 16, it is movably mounted on the sliding surface 17 of the sliding plate 16 so as to be freely supported. The support element 15 receives and holds the contact member 20 as well as the arm 35. Arm 35
A bonding wire guide member 37 provided correspondingly and an optical sensor 36 directed to the processing point P of the lead frame plate 46 are attached to the front end of the lead wire. Support element 15
Corresponding DC excitation to a drive (not shown) operatively connected to the drive element causes movement of the support element 15 in one or both of the X and Y directions. A preferred configuration embodiment corresponding to the above-described bonding head device 50 is known from EP-A-0 317 787.

【0014】上述の支持要素15は接触部材20を受け
ている。この接触部材は本質的には、支持要素15に載
置されたシャフト19の軸Zに関して矢印Z’方向に枢
動可能な支持フレーム22を含んでいる。この支持フレ
ーム22の前部領域はそこに取り付けられるトランスデ
ューサ25と、ボンディングワイヤ・クランプ装置30
とが載置できる構造となっている。トランスデューサ2
5の前端部には毛管27が設けられ、この毛管は交換可
能に保持され、対応して設けられたねじ接続によってト
ランスデューサ25に固定される。他方、支持フレーム
22の後端部には離間した図示しない固定子と卷枠を組
み入れた起電装置21が設けられる。固定子と卷枠の間
には、支持フレーム22に固定された剣状の磁石23が
間隙23’に設けられている。卷枠に対する対応した直
流励起によって、固定子に対する磁石23の相対運動が
起こり、その結果、要素20、25、30の枢動(図
1)が矢印Z’の方向に起こる。
The support element 15 described above receives the contact member 20. This contact element essentially comprises a support frame 22 which is pivotable in the direction of the arrow Z ′ with respect to the axis Z of the shaft 19 mounted on the support element 15. The front region of the support frame 22 includes a transducer 25 mounted thereon and a bonding wire clamp device 30.
And can be placed. Transducer 2
At the front end of 5 is provided a capillary 27 which is held exchangeably and is fixed to the transducer 25 by a correspondingly provided screw connection. On the other hand, at the rear end of the support frame 22, there is provided an electromotive device 21 in which a stator (not shown) and a winding frame (not shown) are assembled. Between the stator and the winding frame, a sword-shaped magnet 23 fixed to the support frame 22 is provided in a gap 23 '. The corresponding direct current excitation with respect to the winding form causes a relative movement of the magnet 23 with respect to the stator, so that the pivoting of the elements 20, 25, 30 (FIG. 1) takes place in the direction of the arrow Z '.

【0015】上述の接触部材20の好ましい構成実施例
は欧州公開特許公報第0340506号から公知であ
る。
A preferred embodiment of the contact member 20 described above is known from EP-A-0 340 506.

【0016】図1はまた、図示しない取出し要素を組み
入れたボンディングワイヤ供給装置を図示している。こ
の取出し要素によって、図示しない電気的/光学的セン
サによって非接触検知されるボンディングワイヤ42は
対応して設けられているワイヤリール41から取り出さ
れる。ボンディングワイヤ42はアーム35上に設けら
れた案内部材37を通して案内され、クランプ装置30
によってワイヤリール41から引き出され、毛管27の
中心に案内される。
FIG. 1 also shows a bonding wire supply apparatus incorporating a take-out element (not shown). With this take-out element, the bonding wire 42 that is detected in a non-contact manner by an electric / optical sensor (not shown) is taken out from a correspondingly provided wire reel 41. The bonding wire 42 is guided through a guide member 37 provided on the arm 35, and is connected to the clamp device 30.
Is drawn out of the wire reel 41 and guided to the center of the capillary tube 27.

【0017】上述のボンディングワイヤ供給装置の好ま
しい構成実施例は欧州公開特許公報第0342358号
から公知である。
A preferred embodiment of the above-described bonding wire supply device is known from EP-A-0 342 358.

【0018】図2はシーケンス制御回路のブロック図で
あり、装置100のボンディングヘッド装置50および
測定ヘッド55、並びにコンピュータ200も併せて概
略図示されている。コンピュータ200は本質的には、
制御ユニット201、掛算器202、ジェネレータ20
3、増幅器204、第一プロセサ205、及び第二プロ
セサ206から成っている。
FIG. 2 is a block diagram of the sequence control circuit, and also schematically shows the bonding head device 50 and the measuring head 55 of the device 100, and the computer 200. Computer 200 is essentially
Control unit 201, multiplier 202, generator 20
3. It comprises an amplifier 204, a first processor 205, and a second processor 206.

【0019】本質的にはボンディングヘッドの運動の測
定、トランスデューサ25の振幅の測定、並びに個々の
計測値の校正から成るシーケンス制御を行なう図2に示
すコンピュータ200と、装置100との関連動作につ
いて以下に説明する。
The operation related to the computer 100 and the apparatus 100 shown in FIG. 2, which essentially performs a sequence control consisting of measuring the movement of the bonding head, measuring the amplitude of the transducer 25, and calibrating the individual measurement values, will be described below. Will be described.

【0020】制御ユニット201は支持要素15に動作
可能に接続されている図示しない起電装置に対して対応
信号1を供給し、これによってトランスデューサ25と
共にボンディングヘッド装置50は所定の距離Skだけ
矢印Y’の方向に移動し、この固定距離Skはセンサ5
2によって計測される。固定距離Skに対応する信号5
は対応電圧Ukに変換するため増幅器204に供給さ
れ、このようにして決定された第一電圧Ukは読み出さ
れるか、または記憶される。
The control unit 201 supplies a corresponding signal 1 to an electromotive device (not shown) operatively connected to the support element 15, whereby the bonding head device 50 together with the transducer 25 is moved by a predetermined distance Sk to the arrow Y. ', And the fixed distance Sk is
2 is measured. Signal 5 corresponding to fixed distance Sk
Is supplied to an amplifier 204 for conversion to a corresponding voltage Uk, and the first voltage Uk determined in this way is read out or stored.

【0021】前以てプログラムされた第一の超音波値は
制御ユニット201によって信号2として掛算器202
に供給され、この掛算器はジェネレータ203に対応信
号3を供給する。ジェネレータ203は信号3を第一電
圧に変換し、これを信号4としてトランスデューサ25
に動作可能に接続している振動部材25’に供給する。
これによって、固定された測定ヘッド55に向う機械的
縦振動がトランスデューサ25の毛管27上に発生し、
センサ52によって計測されて第一計測量Smとして決
定される。この第一計測量Sm(縦振動)に対応する信
号6は増幅器204に供給され、この増幅器によって対
応する第二電圧Umに変換される。このようにして決定
された第二電圧Umもまた記憶可能である。
The pre-programmed first ultrasound value is multiplied by control unit 201 as signal 2 as multiplier 202
, Which supplies the corresponding signal 3 to the generator 203. The generator 203 converts the signal 3 into a first voltage, which is converted into a signal 4 by the transducer 25.
To the vibrating member 25 'operatively connected to
This causes a mechanical longitudinal vibration towards the fixed measuring head 55 on the capillary 27 of the transducer 25,
It is measured by the sensor 52 and determined as the first measurement amount Sm. The signal 6 corresponding to the first measured amount Sm (longitudinal vibration) is supplied to an amplifier 204, which converts the signal 6 into a corresponding second voltage Um. The second voltage Um determined in this way can also be stored.

【0022】増幅器204は第一電圧Ukを信号7とし
て、また第二電圧Umを信号8としてプロセサ205に
供給し、プロセサ205は次式に従って瞬間超音波振幅
S’mを決定し、それを信号9として第二プロセサ20
6に供給する。
The amplifier 204 supplies the first voltage Uk as a signal 7 and the second voltage Um as a signal 8 to a processor 205. The processor 205 determines an instantaneous ultrasonic amplitude S'm according to the following equation, and converts the amplitude into a signal. 9 as the second processor 20
6

【0023】[0023]

【数1】S’m=Sk・Um/UkS′m = Sk · Um / Uk

【0024】プロセサ206において、信号9として供
給された瞬間超音波振幅S’mは対応する補正係数Kf
に変換され、信号10として掛算器202に供給され
る。
In the processor 206, the instantaneous ultrasonic amplitude S'm supplied as the signal 9 is changed by a corresponding correction coefficient Kf
And supplied to the multiplier 202 as a signal 10.

【0025】制御ユニット201によって信号2として
供給された第一超音波値は掛算器202において決定さ
れた補正係数Kfと乗算され、対応する補正信号3’と
してジェネレータ203に供給される。
The first ultrasonic value supplied as signal 2 by the control unit 201 is multiplied by the correction coefficient Kf determined in the multiplier 202 and supplied to the generator 203 as the corresponding correction signal 3 '.

【0026】この信号3’はジェネレータ203におい
て補正された第二電圧に変換され信号4’としてトラン
スデューサ25に動作可能に接続された振動部材25’
に供給される。
The signal 3 'is converted into a second voltage corrected by the generator 203, and the vibration member 25' operably connected to the transducer 25 as a signal 4 '.
Supplied to

【0027】本発明の方法及び装置によって、毛管の変
位または現用の毛管の先端消耗等に起因する縦振動の変
化を直接、正確に測定することが可能になり、算出され
た補正係数によって第一超音波値を対応して校正するこ
とが可能となる。
The method and the apparatus according to the present invention make it possible to directly and accurately measure a change in longitudinal vibration caused by a displacement of a capillary tube or wear of a tip of a currently used capillary tube. It becomes possible to calibrate the ultrasonic value correspondingly.

【0028】特に有利なことは、校正された超音波値が
他のボンディング装置上で再現可能であること、従って
電気回路が同一の超音波値で一定に結線されることであ
る。
It is particularly advantageous that the calibrated ultrasonic values are reproducible on other bonding equipment, and that the electrical circuit is therefore constantly wired with the same ultrasonic values.

【図面の簡単な説明】[Brief description of the drawings]

【図1】電子部品に対して超音波接触結線を施す装置の
斜視図。
FIG. 1 is a perspective view of an apparatus for performing ultrasonic contact connection to an electronic component.

【図2】図1の装置のためのシーケンス制御回路のブロ
ック線図。
FIG. 2 is a block diagram of a sequence control circuit for the device of FIG.

【符号の説明】[Explanation of symbols]

25 エネルギー・トランスデューサ 25’振動部材 27 毛管 30 ボンディングワイヤ・クランプ装置 40 ボンディングワイヤ供給装置 42 ボンディングワイヤ 46 金属リードフレーム板 47 搬送板 50 ボンディングヘッド装置 52 センサ 52’ 送信部 52” 受信部 55 測定ヘッド 60 支持要素 100 ワイヤー・ボンダー 200 コンピュータ 201 制御ユニット 202 掛算器 203 ジェネレータ 204 増幅器 205 第一プロセッサ 206 第二プロセッサ Reference Signs List 25 energy transducer 25 'vibrating member 27 capillary tube 30 bonding wire clamp device 40 bonding wire supply device 42 bonding wire 46 metal lead frame plate 47 transport plate 50 bonding head device 52 sensor 52' transmission unit 52 "reception unit 55 measurement head 60 Support element 100 wire bonder 200 computer 201 control unit 202 multiplier 203 generator 204 amplifier 205 first processor 206 second processor

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 欧州特許出願公開275877(EP,A 1) 欧州特許出願公開317787(EP,A 1) 欧州特許出願公開340506(EP,A 1) (58)調査した分野(Int.Cl.7,DB名) G01H 9/00 H01L 21/607 ────────────────────────────────────────────────── (5) References European Patent Application Publication 275877 (EP, A1) European Patent Application Publication 317787 (EP, A1) European Patent Application Publication 340506 (EP, A1) (58) Search Field (Int.Cl. 7 , DB name) G01H 9/00 H01L 21/607

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ワイヤー・ボンダーのボンディングヘッ
ド(50)のエネルギー・トランスデューサー(25)
の毛管(27)の振幅を測定する方法であって、エネル
ギー・トランスデューサー(25)を所定の距離Skだ
け移動しかつそ の距離を第一電圧Ukを発生するセンサ(52)によっ
て測定し、 毛管(27)を所定の正規の振幅Smで振動させるため
にエネルギー・トランスデューサー(25)に電圧を印
加しかつ第二電圧Umを発生するセンサ(52)によっ
て実際の振幅Sm'を測定し、 Sm'=Sk・Um/Ukとして実際の振幅Sm'を決定
することを含む、毛管の振幅測定方法。
An energy transducer (25) for a wire bonder bonding head (50).
Measuring the amplitude of the capillary (27) by moving the energy transducer (25) by a predetermined distance Sk and measuring the distance by a sensor (52) generating a first voltage Uk; Applying a voltage to the energy transducer (25) to oscillate the capillary (27) at a predetermined regular amplitude Sm and measuring the actual amplitude Sm 'by a sensor (52) generating a second voltage Um; A method of measuring the amplitude of a capillary, comprising determining the actual amplitude Sm 'as Sm' = Sk.Um / Uk.
【請求項2】 前記センサ(52)は光学センサであ
る、請求項1に記載の毛管の振幅測定方法。
2. The method according to claim 1, wherein the sensor is an optical sensor.
【請求項3】 正規の振幅Smと測定された実際の振幅
Sm'とから補正係数Kfがボンディングヘッド(50)
の正規の作動に使用するために計算され、毛管(27)
を振動させるためにエネルギー・トランスデューサー
(25)に印加された電圧が正規の振幅及び補正係数K
fを表す電圧の増加に起因する、請求項1又は2に記載の
毛管の振幅測定方法。
3. The bonding head (50) calculates a correction coefficient Kf from the normal amplitude Sm and the measured actual amplitude Sm ′.
Calculated for use in the normal operation of the capillary (27)
The voltage applied to the energy transducer (25) to oscillate the
The method according to claim 1 or 2, wherein the capillary amplitude measurement is caused by an increase in a voltage representing f.
【請求項4】 請求項1に記載の方法を行うに適したワ
イヤー・ボンダーであって、 リードフレーム板(46)用の搬送板(47)を備えた
支持エレメント(60)と、 エネルギー・トランスデューサー(25)及び毛管(2
7)から成るボンディングヘッド(50)と、 前記ボンディングヘッドによっておおわれた距離Sk及
び毛管(27)の振幅Sm'の双方を測定するのに適した
光学センサ(52)を備えた測定ヘッド(55)とを含
むワイヤー・ボンダー。
4. A wire bonder suitable for performing the method according to claim 1, comprising a support element (60) with a transport plate (47) for a leadframe plate (46), and an energy transformer. Deducer (25) and capillary (2
A measuring head (55) comprising a bonding head (50) consisting of 7) and an optical sensor (52) suitable for measuring both the distance Sk covered by said bonding head and the amplitude Sm 'of the capillary (27). And wire bonder including.
【請求項5】 前記測定ヘッド(55)は光学センサ
(52)の送信部(52')及び受信部(52")を受け
入れるための間隔を置かれた2つの壁(51',52")を
備える凹部(51)を有し、該凹部は毛管(27)を受
け入れるように構成されかつ寸法付けられている、請求
項4に記載のワイヤー・ボンダー。
5. The measuring head (55) comprises two spaced walls (51 ', 52 ") for receiving a transmitting part (52') and a receiving part (52") of an optical sensor (52). The wire bonder according to claim 4, comprising a recess (51) comprising: a recess configured and dimensioned to receive the capillary (27).
【請求項6】 リードフレーム板に半導体装置をワイヤ
結線するための毛管(27)を含むワイヤー・ボンダー
と共に使用するための測定ヘッド(55)であって、光
学センサ(52)の送信部(52')及び受信部(5
2")を受け入れるための間隔を置かれた2つの壁(5
1',52")を備える凹部(51)を有し、該凹部が毛
管(27)を受け入れるように構成されかつ寸法付けら
れている、測定ヘッド。
6. A measuring head (55) for use with a wire bonder including a capillary (27) for wire-connecting a semiconductor device to a lead frame plate, the transmitting part (52) of an optical sensor (52). ') And the receiver (5
2 ") two spaced walls (5
1 ', 52 "), the measuring head having a recess (51) with the recess configured and dimensioned to receive a capillary (27).
JP35554191A 1991-02-15 1991-12-24 Method and apparatus for measuring amplitude of energy transducer Expired - Fee Related JP3178874B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH00471/91-9 1991-02-15
CH47191 1991-02-15

Publications (2)

Publication Number Publication Date
JPH04319627A JPH04319627A (en) 1992-11-10
JP3178874B2 true JP3178874B2 (en) 2001-06-25

Family

ID=4187762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35554191A Expired - Fee Related JP3178874B2 (en) 1991-02-15 1991-12-24 Method and apparatus for measuring amplitude of energy transducer

Country Status (6)

Country Link
US (1) US5199630A (en)
EP (1) EP0498936B1 (en)
JP (1) JP3178874B2 (en)
AT (1) ATE117611T1 (en)
DE (1) DE59104416D1 (en)
HK (1) HK103495A (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2705423B2 (en) * 1992-01-24 1998-01-28 株式会社日立製作所 Ultrasonic bonding equipment and quality monitoring method
JP3128710B2 (en) * 1992-08-12 2001-01-29 株式会社新川 Wire bonding method
DE4400210A1 (en) * 1994-01-05 1995-08-10 Branson Ultraschall Method and device for operating a generator for the HF energy supply of an ultrasonic transducer
DE4447073C1 (en) * 1994-12-29 1996-07-18 Bosch Gmbh Robert Method for testing connections made by ultrasonic wire bonding
US5608172A (en) * 1995-03-16 1997-03-04 Texas Instruments Incorporated Die bond touch down detector
DE19512820B4 (en) * 1995-04-05 2005-11-03 Branson Ultraschall Niederlassung Der Emerson Technologies Gmbh & Co Method and device for adjusting the operating frequency of an orbital vibration welding system
WO1997001432A1 (en) 1995-06-26 1997-01-16 Minnesota Mining And Manufacturing Company Welding controller
AU7124696A (en) * 1995-08-15 1997-03-12 Hesse & Knipps Gmbh Wire-guiding device
AU1223499A (en) 1997-09-20 1999-04-12 Hesse & Knipps Gmbh Wire brake
JP3631030B2 (en) * 1998-01-23 2005-03-23 株式会社ハイニックスセミコンダクター X, Y, Z axis drive device equipped with wire bonder and position control method thereof
DE19810509C2 (en) * 1998-03-11 2000-02-10 Fraunhofer Ges Forschung Ultrasonic welding device
JP3176580B2 (en) * 1998-04-09 2001-06-18 太陽誘電株式会社 Electronic component mounting method and mounting device
DE19924623A1 (en) * 1999-05-28 2000-11-30 Herrmann Ultraschalltechnik Ultrasonic welding process for welding or riveting of components is controlled by increasing or reducing sonotrode pressure during sonotrode advance
US6827247B1 (en) * 1999-12-08 2004-12-07 Asm Technology Singapore Pte Ltd. Apparatus for detecting the oscillation amplitude of an oscillating object
KR100896828B1 (en) * 2001-10-26 2009-05-12 외르리콘 어셈블리 이큅먼트 아게, 슈타인하우젠 Method for the calibration of a wire bonder
DE50107061D1 (en) * 2001-10-26 2005-09-15 Unaxis Int Trading Ltd Procedure for calibrating a wire bonder
KR20030066348A (en) * 2002-02-01 2003-08-09 에섹 트레이딩 에스에이 Method for the calibration of a wire bonder
EP1340582A1 (en) * 2002-02-28 2003-09-03 Esec Trading S.A. Process and apparatus for the measure of the amplitude of a free oscillating capillary of a wire bonder
KR100903458B1 (en) * 2002-02-28 2009-06-18 외르리콘 어셈블리 이큅먼트 아게, 슈타인하우젠 Method and device for measuring the amplitude of a freely oscillating capillary of a wire bonder
TW575932B (en) * 2002-12-17 2004-02-11 Ind Tech Res Inst Structure and method for testing etching rate
DE10357418B4 (en) * 2002-12-20 2005-06-16 Esec Trading S.A. Device for measuring the oscillation amplitude of the tip of a capillary
EP1431729A1 (en) * 2002-12-20 2004-06-23 Esec Trading S.A. Apparatus for measuring the amplitude of the oscillation of the tip of a capillary
KR20040089480A (en) * 2003-04-14 2004-10-21 에섹 트레이딩 에스에이 Wire bonder with a device for determining the vectorial distance between the capillary and the image recognition system and method
DE102004026826B4 (en) * 2004-05-28 2010-01-14 Schunk Ultraschalltechnik Gmbh Ultrasonic welding device and converter of an ultrasonic welding device
US7819013B2 (en) * 2006-07-05 2010-10-26 The Hong Kong Polytechnic University Method and apparatus for measuring oscillation amplitude of an ultrasonic device
DE602006015192D1 (en) 2006-09-05 2010-08-12 Fraunhofer Ges Forschung Method and device for regulating the production of wire bonds
EP3603826B1 (en) * 2018-07-31 2023-05-10 Infineon Technologies AG Method for calibrating an ultrasonic bonding machine

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1506164A (en) * 1974-07-09 1978-04-05 Mullard Ltd Ultrasonic bonding apparatus
DE3241710A1 (en) * 1982-11-11 1984-05-17 Diffracto Ltd., Windsor, Ontario Method and device for testing parts or workpieces
DE3701652A1 (en) * 1987-01-21 1988-08-04 Siemens Ag MONITORING OF BONDING PARAMETERS DURING THE BONDING PROCESS
EP0317787B2 (en) * 1987-11-25 1997-05-07 Esec Sa Device for carrying out the readying movement of a work piece towards a work station
DE58906862D1 (en) * 1988-05-05 1994-03-17 Esec Sa Device for ultrasonically contacting wire connection on electronic components.
EP0342358A1 (en) * 1988-05-18 1989-11-23 Esec Sa Process and device for supplying a bonding wire

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ATE117611T1 (en) 1995-02-15
EP0498936A1 (en) 1992-08-19
HK103495A (en) 1995-07-07
DE59104416D1 (en) 1995-03-09
JPH04319627A (en) 1992-11-10
US5199630A (en) 1993-04-06
EP0498936B1 (en) 1995-01-25

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