JP3176104B2 - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JP3176104B2
JP3176104B2 JP30235991A JP30235991A JP3176104B2 JP 3176104 B2 JP3176104 B2 JP 3176104B2 JP 30235991 A JP30235991 A JP 30235991A JP 30235991 A JP30235991 A JP 30235991A JP 3176104 B2 JP3176104 B2 JP 3176104B2
Authority
JP
Japan
Prior art keywords
cassette
housing
nitrogen gas
cassette storage
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP30235991A
Other languages
Japanese (ja)
Other versions
JPH0677152A (en
Inventor
誠 小沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP30235991A priority Critical patent/JP3176104B2/en
Publication of JPH0677152A publication Critical patent/JPH0677152A/en
Application granted granted Critical
Publication of JP3176104B2 publication Critical patent/JP3176104B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、シリコンウェーハを処
理して半導体素子を製造する縦型拡散、CVD装置等の
半導体製造装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical diffusion or CVD apparatus for manufacturing a semiconductor device by processing a silicon wafer .
The present invention relates to a semiconductor manufacturing device .

【0002】[0002]

【従来の技術】従来の縦型拡散、CVD装置は、ロード
ロック室、該ロードロック室の上部に反応炉、ウェーハ
が装填されたカセットを授受し、且一時保持する為のカ
セット棚等からなり、これらは筐体内に収納された構造
となっている。又、前記ロードロック室にはウェーハが
装填されたボートを前記反応炉に装入、取出すボート昇
降装置等のウェーハ搬送装置を内蔵している。
2. Description of the Related Art A conventional vertical diffusion and CVD apparatus comprises a load lock chamber, a reaction furnace above the load lock chamber, a cassette shelf for receiving and temporarily holding a cassette loaded with wafers, and the like. , These are housed in a housing. Further, the load lock chamber contains a wafer transfer device such as a boat elevating device for loading and unloading a boat loaded with wafers into and from the reaction furnace.

【0003】斯かる縦型拡散、CVD装置に於いて、前
記反応炉で処理されたウェーハを反応炉より大気中に取
出した場合、ウェーハが高温の為自然酸化する。従っ
て、従来の縦型拡散、CVD装置では前記ロードロック
室を真空容器とし、該ロードロック室を真空状態として
ウェーハの装入、取出しを行い、更に前記ロードロック
室に窒素ガスを充満させ、ロードロック室を大気圧とし
た後、縦型拡散、CVD装置から外部にウェーハを取出
していた。
In such a vertical diffusion and CVD apparatus, when a wafer processed in the reactor is taken out of the reactor into the atmosphere, the wafer is naturally oxidized due to its high temperature. Therefore, in a conventional vertical diffusion and CVD apparatus, the load lock chamber is a vacuum vessel, the load lock chamber is evacuated, and wafers are loaded and unloaded. Further, the load lock chamber is filled with nitrogen gas and loaded. After the lock chamber was set to the atmospheric pressure, the wafer was taken out of the vertical diffusion and CVD apparatus to the outside.

【0004】[0004]

【発明が解決しようとする課題】前記したロードロック
室はウェーハが装填されたボートを前記反応炉に装入、
取出すボート昇降装置を内蔵する等、比較的大容積であ
り、斯かるロードロック室を真空容器とするには、板厚
の厚い、而も構造上の制約から大型化せざるを得ず、製
作費も高価なものとなっていた。
In the load lock chamber, a boat loaded with wafers is charged into the reactor .
It has a relatively large volume, such as a built-in boat lifting device to be taken out, and in order to make such a load lock chamber a vacuum vessel, it must be enlarged due to thick plate thickness and structural limitations. Expenses were also expensive.

【0005】又、上記した従来のものでは、ロードロッ
ク室に移載する前の待機中のウェーハの自然酸化、或は
処理後縦型拡散、CVD装置より搬送する迄の待機中で
の自然酸化を防止することができなかった。
Further, in the above-described conventional apparatus, the natural oxidation of the wafer during standby before transfer to the load lock chamber, or the vertical diffusion after processing, and the natural oxidation during standby until the wafer is transferred from the CVD apparatus. Could not be prevented.

【0006】本発明は斯かる実情に鑑み、特に真空容器
を設けることなく、窒素ガスの置換でウェーハの酸化を
防止し、更に大気中での自然酸化を防止しようとするも
のである。
In view of such circumstances, the present invention is intended to prevent oxidation of a wafer by replacing nitrogen gas without providing a vacuum vessel, and further to prevent natural oxidation in the atmosphere.

【0007】[0007]

【課題を解決するための手段】本発明は、反応炉と、カ
セット収納部と、ウェーハ保持部材と、該ウェーハ保持
部材と前記カセット収納部に収納されたカセットとの間
でウェーハを移載するウェーハ移載機と、バッファカセ
ット収納室とを筐体内に設け、前記バッファカセット収
納室内部を窒素ガスにより置換可能とした半導体製造
装置に係り、又、反応炉と、カセット収納部と、ボート
と前記カセット収納部に載置されたカセットとの間でウ
ェーハを移載するウェーハ移載機と、バッファカセット
収納室とを筐体内に設け、該筐体にカセットを搬入する
為の開口と、該開口を閉塞するシャッタとを設け、前記
バッファカセット収納室の内部を窒素ガスにより置換可
能とした半導体製造装置に係り、更に、前記筐体内部を
窒素ガスにより置換可能とした半導体製造装置に係るも
である。
SUMMARY OF THE INVENTION The present invention comprises a reactor,
Set storage section, wafer holding member, and wafer holding
Between the member and the cassette stored in the cassette storage section
Wafer transfer machine for transferring wafers by
And Tsu preparative housing chamber provided in a housing, relates the interior of the buffer cassette accommodation chamber in a semiconductor manufacturing apparatus which enables replaced by nitrogen gas, and a reaction furnace, and the cassette housing part, the boat
Between the cassette and the cassette placed in the cassette storage section.
Wafer transfer machine for transferring wafers and buffer cassette
A storage room is provided in a housing, and a cassette is loaded into the housing.
An opening for closing the shutter, and a shutter for closing the opening.
The inside of the buffer cassette storage room can be replaced with nitrogen gas
It relates to a semiconductor manufacturing apparatus with ability Furthermore, according to the inside of the casing to the semiconductor manufacturing device capable replaced by nitrogen gas
Than it is.

【0008】[0008]

【作用】筐体、バッファカセット収納室内部を窒素ガス
により置換することで、ウェーハの移載、待機中での自
然酸化を防止できる。
By replacing the inside of the housing and the inside of the buffer cassette storage chamber with nitrogen gas, it is possible to prevent the wafer from being transferred and natural oxidation during standby.

【0009】[0009]

【実施例】以下、図面を参照しつつ本発明の一実施例を
説明する。
An embodiment of the present invention will be described below with reference to the drawings.

【0010】図1は本発明に係る縦型拡散、CVD装置
の概略図であり、図中1は筐体を示し、該筐体1内部に
ボート装入装置2を収納する隔室3が形成され、該隔室
3の上方には反応炉4が設けられている。前記筐体1、
隔室3は例えば、各面にパネルを嵌込んだ如き構成であ
り、又各パネルの接合部はゴム等のシール材でシール
し、常圧環境で密閉構造とする。
FIG. 1 is a schematic view of a vertical diffusion and CVD apparatus according to the present invention. In the figure, reference numeral 1 denotes a housing, and a compartment 3 for accommodating a boat loading device 2 is formed inside the housing 1. A reaction furnace 4 is provided above the compartment 3. The housing 1,
The compartment 3 has, for example, a structure in which a panel is fitted on each surface, and a joint portion of each panel is sealed with a sealing material such as rubber to have a closed structure under a normal pressure environment.

【0011】前記ボート装入装置2はボートエレベータ
5にウェーハを多段に保持するボート6を載置するもの
であり、前記隔室3と反応炉4との間にはゲートバルブ
7が設けられ、該隔室3の側壁にはシャッタ8が設けら
れている。
The boat loading device 2 mounts a boat 6 for holding wafers in multiple stages on a boat elevator 5, and a gate valve 7 is provided between the compartment 3 and the reaction furnace 4. A shutter 8 is provided on a side wall of the compartment 3.

【0012】該シャッタ8を挾み、前記ボート装入装置
2に対向してウェーハ移載機9が設けられ、更に該ウェ
ーハ移載機9に隣接してカセット収納室10が設けられ
ている。
A wafer transfer device 9 is provided opposite the boat loading device 2 with the shutter 8 interposed therebetween, and a cassette storage chamber 10 is provided adjacent to the wafer transfer device 9.

【0013】前記ウェーハ移載機9は、昇降可能な昇降
ブロック11と、該昇降ブロック11に設けられウェー
ハ12を水平方向に移動させる搬送ユニット13とから
成り、該ウェーハ移載機9により前記カセット収納室1
0に収納したカセット14からウェーハ12を1枚ずつ
前記ボート6に移載する様になっている。
The wafer transfer machine 9 comprises an elevating block 11 which can be moved up and down, and a transfer unit 13 provided on the elevating block 11 for moving a wafer 12 in a horizontal direction. Storage room 1
The wafers 12 are transferred one by one from the cassette 14 stored in the boat 6 to the boat 6.

【0014】前記筐体1の前記カセット収納室10に対
峙する位置に、シャッタ22を設ける。又、前記筐体1
に窒素ガス供給管23が設けられており、該窒素ガス供
給管23は図示しない窒素ガス供給源に接続されてい
る。前記筐体1には排気管24を接続し、該排気管24
には開閉弁25を設ける。
A shutter 22 is provided in the housing 1 at a position facing the cassette storage chamber 10. Also, the housing 1
Is provided with a nitrogen gas supply pipe 23, and the nitrogen gas supply pipe 23 is connected to a nitrogen gas supply source (not shown). An exhaust pipe 24 is connected to the housing 1.
Is provided with an on-off valve 25.

【0015】前記隔室3には窒素ガス供給管15が設け
られており、該窒素ガス供給管15は図示しない窒素ガ
ス供給源に接続されている。又、前記隔室3には排気管
16を接続し、該排気管16には開閉弁17を設ける。
The compartment 3 is provided with a nitrogen gas supply pipe 15, which is connected to a nitrogen gas supply source (not shown). Further, an exhaust pipe 16 is connected to the compartment 3, and the exhaust pipe 16 is provided with an on-off valve 17.

【0016】又、前記カセット収納室10に隣接して
ッファカセット収納室18を昇降可能に設け、該バッフ
ァカセット収納室18は常圧環境で密閉構造とし、又シ
ャッタ19により開閉可能とする。前記バッファカセッ
収納室18には窒素ガス供給管20、排気管21を接
続し、該排気管21には開閉弁26を設ける。
Further, a bag is provided adjacent to the cassette storage chamber 10.
Providing a Tsu file cassette storage chamber 18 to be movable up and down, the buffer
The cassette housing chamber 18 has a hermetically sealed structure in a normal pressure environment and can be opened and closed by a shutter 19. The buffer cassette
The storage chamber 18 is connected to a nitrogen gas supply pipe 20 and an exhaust pipe 21, and the exhaust pipe 21 is provided with an on-off valve 26.

【0017】以下、作動を説明する。Hereinafter, the operation will be described.

【0018】ウェーハ12が装填されたカセット14
は、前記カセット収納室10に収納される。この状態
で、前記シャッタ22が閉塞され前記筐体1が密閉状態
になる。
Cassette 14 loaded with wafers 12
Are stored in the cassette storage chamber 10. In this state, the shutter 22 is closed and the housing 1 is closed.

【0019】開閉弁25を開き窒素ガス供給管23より
窒素ガスを供給して筐体1内を窒素ガスに置換し、又前
記シャッタ19を閉じ、開閉弁26を開いて窒素ガス供
給管20より窒素ガスを供給してバッファカセット収納
室18内を窒素ガスで置換する。
The on-off valve 25 is opened to supply nitrogen gas from the nitrogen gas supply pipe 23 to replace the inside of the housing 1 with nitrogen gas. The shutter 19 is closed, and the on-off valve 26 is opened to open the on-off valve 26 from the nitrogen gas supply pipe 20. A nitrogen gas is supplied to replace the inside of the buffer cassette storage chamber 18 with the nitrogen gas.

【0020】更に、前記シャッタ8を閉じ、前記開閉弁
17を開け、前記窒素ガス供給管15より窒素ガスを供
給しつつ前記排気管16より排気して前記隔室3の内部
を窒素ガス置換する。ここで、前記筐体1、バッファカ
セット収納室18、隔室3内部の圧力は、常圧とする。
Further, the shutter 8 is closed, the on-off valve 17 is opened, and the inside of the compartment 3 is replaced with nitrogen gas by exhausting from the exhaust pipe 16 while supplying nitrogen gas from the nitrogen gas supply pipe 15. . Here, the housing 1, the buffer
The pressure inside the set storage room 18 and the compartment 3 is normal pressure.

【0021】而して、前記した様に筐体1、隔室3、
ッファカセット収納室18は常圧環境では、密閉構造で
あり、該隔室3の酸素ガス濃度100〜20ppm が容易
に達せられ、処理前、処理後の待機状態での自然酸化を
防止するに充分な環境とすることができる。
As described above, the housing 1, the compartment 3, and the
The buffer cassette storage chamber 18 has a closed structure in a normal pressure environment, and the oxygen gas concentration in the compartment 3 can easily reach 100 to 20 ppm, which is sufficient to prevent natural oxidation before and after treatment in a standby state. Environment.

【0022】而して、ウェーハ12の処理を行う場合
は、前記シャッタ8を開き、前記ウェーハ移載機9で前
記カセット収納室10に収納されているカセット14の
ウェーハ12を順次前記ボート6へ移載する。次に前記
ゲートバルブ7を開き、該ボート6を前記反応炉4に装
入する。
When processing the wafers 12, the shutter 8 is opened, and the wafers 12 in the cassettes 14 stored in the cassette storage chamber 10 are sequentially transferred to the boat 6 by the wafer transfer machine 9. Transfer. Next, the gate valve 7 is opened, and the boat 6 is charged into the reaction furnace 4.

【0023】ウェーハ12の処理が終り、ボートエレベ
ータ5で前記ボート6を取出し、前記隔室3の内部で所
要時間経過した後前記シャッタ8を開け、前記ウェーハ
移載機9により、前記バッファカセット収納室18のカ
セット14にウェーハ12を移載し、移載が完了すると
前記シャッタ19を閉じて所要時間待機させる。
After the processing of the wafers 12 is completed, the boat 6 is taken out by the boat elevator 5, and after a required time has passed inside the compartment 3, the shutter 8 is opened, and the wafer transfer machine 9 stores the buffer cassette. The wafer 12 is transferred to the cassette 14 in the chamber 18, and when the transfer is completed, the shutter 19 is closed to stand by for a required time.

【0024】ウェーハ12処理後の一連の作動が完了す
ると前記シャッタ22を開き、前記カセット収納室10
にウェーハ12が装填されたカセット14を収納させ
る。
When a series of operations after the processing of the wafer 12 is completed, the shutter 22 is opened and the cassette storage chamber 10 is opened.
The cassette 14 in which the wafers 12 are loaded is stored.

【0025】ここで、前記シャッタ22の開放で筐体1
内の窒素ガス雰囲気が壊れるが、前記バッファカセット
収納室18は密閉された窒素ガス雰囲気を保持している
ので前記バッファカセット収納室18に収納されたウェ
ーハ12は自然酸化から保護される。
Here, the housing 1 is opened when the shutter 22 is opened.
While a nitrogen gas atmosphere of the inner breaks, the buffer cassette <br/> storage chamber 18 wafer 12 housed in the buffer cassette storage chamber 18 because it holds the nitrogen gas atmosphere sealed are protected from the natural oxide You.

【0026】而して、上記一連の動作を繰返せばウェー
ハ12の処理が反復継続される。
By repeating the above-described series of operations, the processing of the wafer 12 is repeated.

【0027】[0027]

【発明の効果】以上述べた如く本発明によれば、筐体、
バッファカセット収納室の内部を窒素ガスで置換するの
で待機中、移載中のウェーハの自然酸化を防止し得、製
品品質を向上させることができると共に筐体、バッファ
カセット収納室を常圧気密構造とするので構造が著しく
簡単となり、装置の製造コストを大幅に低減することが
できる。
As described above, according to the present invention, the housing,
Housing waiting since the internal buffer cassette accommodation chamber is replaced with nitrogen gas, to obtain to prevent spontaneous oxidation of the wafer during transfer, it is possible to improve the product quality, buffer
Since the cassette accommodating chamber has a normal pressure airtight structure, the structure is significantly simplified, and the manufacturing cost of the apparatus can be greatly reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例を示す概略図である。FIG. 1 is a schematic diagram showing one embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 筐体 2 ボート装入装置 3 隔室 4 反応炉 9 ウェーハ移載機 10 カセット収納室 12 ウェーハ 18 バッファカセット収納室REFERENCE SIGNS LIST 1 housing 2 boat loading device 3 compartment 4 reaction furnace 9 wafer transfer machine 10 cassette storage room 12 wafer 18 buffer cassette storage room

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 21/205 H01L 21/22 - 21/24 H01L 21/31 H01L 21/365 H01L 21/38 - 21/40 H01L 21/469 H01L 21/86 Continued on the front page (58) Fields surveyed (Int.Cl. 7 , DB name) H01L 21/205 H01L 21/22-21/24 H01L 21/31 H01L 21/365 H01L 21/38-21/40 H01L 21 / 469 H01L 21/86

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 反応炉と、カセット収納部と、ウェーハ
保持部材と、該ウェーハ保持部材と前記カセット収納部
に収納されたカセットとの間でウェーハを移載するウェ
ーハ移載機と、バッファカセット収納室とを筐体内に設
け、前記バッファカセット収納室内部を窒素ガスによ
り置換可能としたことを特徴とする半導体製造装置。
1. A reaction furnace, a cassette storage unit, and a wafer
Holding member, the wafer holding member and the cassette storage section
To transfer wafers to and from the cassette stored in
The transfer machine and the buffer cassette storage room are
In the semiconductor manufacturing apparatus, the inside of the buffer cassette storage chamber may be replaced with nitrogen gas.
【請求項2】 反応炉と、カセット収納部と、ボートと
前記カセット収納部に載置されたカセットとの間でウェ
ーハを移載するウェーハ移載機と、バッファカセット収
納室とを筐体内に設け、該筐体にカセットを搬入する為
の開口と、該開口を閉塞するシャッタとを設け、前記バ
ッファカセット収納室の内部を窒素ガスにより置換可能
としたことを特徴とする半導体製造装置。
2. A housing comprising a reaction furnace, a cassette storage, a wafer transfer machine for transferring wafers between a boat and a cassette mounted in the cassette storage, and a buffer cassette storage chamber in a housing. An opening for loading a cassette into the housing, and a shutter for closing the opening, wherein the inside of the buffer cassette storage chamber can be replaced with nitrogen gas.
【請求項3】 前記筐体内部を窒素ガスにより置換可能
とした請求項1又は請求項2の半導体製造装置。
3. The semiconductor manufacturing apparatus according to claim 1, wherein the inside of the housing is replaceable with nitrogen gas.
JP30235991A 1991-10-22 1991-10-22 Semiconductor manufacturing equipment Expired - Lifetime JP3176104B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30235991A JP3176104B2 (en) 1991-10-22 1991-10-22 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30235991A JP3176104B2 (en) 1991-10-22 1991-10-22 Semiconductor manufacturing equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2000386886A Division JP2001230300A (en) 2000-12-20 2000-12-20 Semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH0677152A JPH0677152A (en) 1994-03-18
JP3176104B2 true JP3176104B2 (en) 2001-06-11

Family

ID=17907956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30235991A Expired - Lifetime JP3176104B2 (en) 1991-10-22 1991-10-22 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JP3176104B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213446A (en) * 1994-12-08 1996-08-20 Tokyo Electron Ltd Processing equipment
US6218045B1 (en) 1997-11-07 2001-04-17 Matsushita Electric Industrial Co., Ltd. Sealed lead-acid storage battery

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
水品,「縦型拡散/LP CVDシステム」,電子材料,工業調査会,1989年3月号,p37−42

Also Published As

Publication number Publication date
JPH0677152A (en) 1994-03-18

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