JP3173262B2 - Thin film magnetic sensor - Google Patents
Thin film magnetic sensorInfo
- Publication number
- JP3173262B2 JP3173262B2 JP31930193A JP31930193A JP3173262B2 JP 3173262 B2 JP3173262 B2 JP 3173262B2 JP 31930193 A JP31930193 A JP 31930193A JP 31930193 A JP31930193 A JP 31930193A JP 3173262 B2 JP3173262 B2 JP 3173262B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- film
- magnetic thin
- coil conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Measuring Magnetic Variables (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、フラックスゲート型
の薄膜型磁気センサ、特にコイル面に垂直な方向からの
磁界検知をなし得る薄膜型磁気センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic sensor of the flux gate type, and more particularly to a thin film magnetic sensor capable of detecting a magnetic field from a direction perpendicular to a coil surface.
【０００２】[0002]
【従来の技術】従来より、よく知られたフラックスゲー
ト型の磁気センサとしては、磁性材料からなる棒状コア
に励振コイルと信号コイル巻回するもの、同じく磁性材
料からなるリンゴコアに励振コイルと信号コイルを巻回
するものがある。図７にリングコア５１に励振コイル５
２、信号コイル５３を巻回した場合の原理図を示してい
る。図７において、励振コイル５２には、コアを飽和磁
化するのに充分な交流電流ＩEXが供給される。この電流
ＩEXによって、リングコア５１のＡ点、Ｂ点には同じ交
流磁束φEXを発生する。一方、信号コイル５３は、２つ
の場所Ａ点における磁束φA の変化、及びＢ点における
磁束φB の変化による電圧を加算して検出するように巻
かれている。外部磁界Ｈ（被測定磁界）が存在しない場
合は、Ａ、Ｂ点で発生されている磁束φA 、φB は、コ
アの飽和磁化特性のため、励振コイル５２に流れる電流
には比例せず、頭打ちの波形とはなるが、同じタイミン
グで発生されるため、信号コイル５３には電圧が現れな
い。次に、コア５１に外部より磁界Ｈが入力されると、
φA 、φB とＨの方向をみてもわかるように、磁束に不
均衡が生じる。この不均衡は、φA とφB の頭打ちにな
るタイミングにずれを生じさせるので、受信コイルに励
振電流ＩEXの２倍の周波数の交流電圧が現れる。2. Description of the Related Art Heretofore, a well-known flux gate type magnetic sensor includes an excitation coil and a signal coil wound on a rod-shaped core made of a magnetic material, and an excitation coil and a signal coil wound on an apple core also made of a magnetic material. There is something to wind. FIG. 7 shows a ring core 51 and an excitation coil 5.
2. The principle diagram when the signal coil 53 is wound is shown. In FIG. 7, an excitation coil 52 is supplied with an alternating current I EX sufficient to cause the core to be saturated and magnetized. Due to this current I EX , the same AC magnetic flux φ EX is generated at points A and B of the ring core 51. On the other hand, the signal coil 53 is wound so as to add and detect a voltage due to a change in the magnetic flux φA at two points A and a change in the magnetic flux φB at the points B. When there is no external magnetic field H (the magnetic field to be measured), the magnetic fluxes φ A and φ B generated at points A and B are not proportional to the current flowing through the excitation coil 52 due to the saturation magnetization characteristics of the core. , But the voltage is not generated in the signal coil 53 because it is generated at the same timing. Next, when a magnetic field H is input to the core 51 from the outside,
As can be seen from the directions of φ A , φ B and H, imbalance occurs in the magnetic flux. This imbalance, phi so cause misalignment in timing at which a plateau of A and phi B, an AC voltage of twice the frequency of the excitation current I EX appears in the receiving coil.
【０００３】[0003]
【発明が解決しようとする課題】上記した従来のフラッ
クスゲート型の磁気センサは、棒状コアやリングコアに
巻線を実際に巻いて構成するものであるから、どうして
もある程度大型になることはやむを得ず、小型化には限
界があった。そこで、この種、磁気センサの小型化を実
現するために、回路基板上に、先ずコイル用の一部導体
パターンを形成し、次に、その上にリング状のコアを薄
膜形成し、続いて、コイル用の一部導体パターンをリン
グコアの上面に形成し、この導体パターンと、すでに形
成済のリングコアの下面の導体パターンをコイルとなる
ように接続するようにした薄膜型の磁気センサが検討さ
れている。The above-mentioned conventional fluxgate type magnetic sensor is constructed by actually winding a winding around a rod-shaped core or a ring core. Conversion was limited. Therefore, in order to realize the miniaturization of this type of magnetic sensor, a partial conductor pattern for a coil is first formed on a circuit board, and then a ring-shaped core is formed thereon as a thin film. A thin-film magnetic sensor in which a partial conductor pattern for a coil is formed on the upper surface of a ring core, and this conductor pattern and the conductor pattern on the lower surface of the already formed ring core are connected to form a coil is being studied. ing.
【０００４】しかし、図７で示した原理図でもわかるよ
うに、薄膜化が実現しても、磁界検出方向は、コア形成
面に対して平行な方向であり、垂直方向からの磁界検出
ができなかった。この発明は、上記問題点に着目してな
されたものであって、薄膜形成面に対して垂直方向の磁
界を検出し得る薄膜型磁気センサを提供することを目的
としている。However, as can be seen from the principle diagram shown in FIG. 7, even when the thickness is reduced, the magnetic field detection direction is parallel to the core forming surface, and the magnetic field can be detected from the vertical direction. Did not. The present invention has been made in view of the above problems, and has as its object to provide a thin-film magnetic sensor capable of detecting a magnetic field in a direction perpendicular to a thin-film formation surface.
【０００５】[0005]
【課題を解決するための手段及び作用】この出願の特許
請求の範囲の請求項１に記載の薄膜型磁気センサは、２
層の磁性薄膜層を有し、これら２層の磁性薄膜層が２箇
所で接触して閉磁路を形成する磁性薄膜部と、この磁性
薄膜部の内空部を基準にして左右の磁性薄膜部に、左右
でそれぞれ巻方向が異なるように巻回形成される第１の
コイル導体膜と、その第１のコイル導体膜とは離隔し
て、前記左右の磁性薄膜部に、左右でそれぞれ巻方向が
同一となるように巻回形成される第２のコイル導体膜
と、前記磁性薄膜部、第１のコイル導体膜、及び第２の
コイル導体膜間に充たされる絶縁膜とから構成されてい
る。The thin-film magnetic sensor according to claim 1 of the present application has the following features.
A magnetic thin-film portion having two magnetic thin-film layers, wherein the two magnetic thin-film layers are in contact at two locations to form a closed magnetic circuit, and a left and right magnetic thin-film portion with reference to the inner space of the magnetic thin-film portion. A first coil conductor film formed so that the winding directions are different from each other on the left and right sides, and the first coil conductor film is separated from the first coil conductor film by the left and right magnetic thin film portions. Are formed so as to be the same as each other, and an insulating film filled between the magnetic thin film portion, the first coil conductor film, and the second coil conductor film. .
【０００６】この薄膜型磁気センサでは、励振用の交流
信号源を第１の導体膜に接続して通電すると、第１のコ
イル導体膜は左右で異なる方向に巻回しているので、第
２の導体膜に鎖交する磁束変化は、左右で同方向とな
り、外部磁界Ｈが入力されないと、導出される電圧は打
消し合うことになる。外部磁界Ｈが入ると、第２の導体
膜は、左右で同一方向に巻回されているので、同じ磁束
変化に応じた電圧が誘起され、外部磁界に応じた検出電
圧が得られる。この場合、外部磁界は薄膜層形成面に垂
直方向である。In this thin-film magnetic sensor, when an AC signal source for excitation is connected to the first conductor film and energized, the first coil conductor film is wound in different directions on the left and right, so that the second The change in magnetic flux linked to the conductor film is in the same direction on the left and right, and if no external magnetic field H is input, the derived voltages will cancel each other out. When the external magnetic field H enters, the second conductor film is wound in the same direction on the left and right, so that a voltage corresponding to the same change in magnetic flux is induced, and a detection voltage corresponding to the external magnetic field is obtained. In this case, the external magnetic field is in a direction perpendicular to the surface on which the thin film layer is formed.
【０００７】請求項２記載の薄膜型磁気センサは、２層
の磁性薄膜層を有し、これらの２層の磁性薄膜層が複数
箇所で接触して、複数個の閉磁路を形成する磁性薄膜部
と、前記磁気薄膜層間に形成され、通電すると、前記磁
性薄膜部の各接触部に、磁性薄膜層と垂直となる方向に
一定方向の磁界を発生するように形成される第１のコイ
ル導体膜と、前記磁性薄膜層間に形成され、通電する
と、前記磁性薄膜部の各接触部に磁性薄膜層と垂直とな
る方向で、かつ接触部の半数ずつ互いに逆方向となる磁
界を発生するように形成される第２のコイル導体膜と、
前記磁性薄膜部、第１のコイル導体膜及び第２のコイル
導体膜間に充たされる絶縁膜とから構成されている。According to a second aspect of the present invention, there is provided a thin film magnetic sensor having two magnetic thin film layers, wherein the two magnetic thin film layers contact at a plurality of locations to form a plurality of closed magnetic paths. A first coil conductor formed between the magnetic thin film layer and the magnetic thin film layer, and is formed so as to generate a magnetic field in a direction perpendicular to the magnetic thin film layer at each contact portion of the magnetic thin film portion when energized. A film is formed between the magnetic thin film layers, and when energized, a magnetic field is generated at each contact portion of the magnetic thin film portion in a direction perpendicular to the magnetic thin film layer and half of the contact portions in opposite directions. A second coil conductor film to be formed;
It is composed of the magnetic thin film portion, an insulating film filled between the first coil conductor film and the second coil conductor film.
【０００８】この薄膜型磁気センサでは、第１のコイル
導体膜に流れ込む電流によって、マトリクス状の磁性薄
膜接触辺部を含む多数の閉磁路を周回する磁界が発生す
る。この磁界のみでは、全体的には垂直方向に打消合
う。第２のコイル導体には、外部磁界により、励振周波
数の２倍の周波数の交流電圧をフラックスゲートの原理
により発生する。In this thin-film magnetic sensor, a current flowing into the first coil conductor film generates a magnetic field which circulates around a number of closed magnetic paths including the contact side portions of the magnetic thin film in a matrix. The magnetic field alone cancels out in the vertical direction as a whole. In the second coil conductor, an AC voltage having a frequency twice as high as the excitation frequency is generated by an external magnetic field by the principle of a flux gate.
【０００９】[0009]
【実施例】以下、実施例により、この発明をさらに詳細
に説明する。図１は、この発明の一実施例薄膜型磁気セ
ンサの要部拡大斜視図、図２は図１のＡ−Ａで切断した
拡大断面図である。この実施例薄膜型磁気センサは、基
板１上に形成される下部磁性薄膜層２と、側面視コ字状
形の上部磁性薄膜層３と、励振コイルとして使用される
導体膜４と、信号コイルとして使用される導体膜５と、
各部をそれぞれ絶縁する絶縁層６とで構成されている。The present invention will be described in more detail with reference to the following examples. FIG. 1 is an enlarged perspective view of a main part of a thin-film magnetic sensor according to an embodiment of the present invention, and FIG. 2 is an enlarged sectional view cut along AA of FIG. The thin-film magnetic sensor of this embodiment includes a lower magnetic thin-film layer 2 formed on a substrate 1, an upper magnetic thin-film layer 3 having a U-shape in a side view, a conductor film 4 used as an excitation coil, and a signal coil. A conductive film 5 used as
It comprises an insulating layer 6 for insulating each part.
【００１０】下部磁性薄膜層２と上部磁性薄膜層３は、
下部磁性薄膜層２の端縁２ａ、２ｂと、上部磁性薄膜層
３のコ字状部の短辺部３ａ、３ｂの先端部が接触し、磁
気閉路を形成し、磁性薄膜部７を構成している。励振コ
イルとしての導体膜４は、磁性薄膜部７の左側部分３ａ
の周囲に巻回される巻線パターン部４ａと、磁性薄膜部
７の右側部分３ｂの周囲に巻回される巻線パターン部４
ｂが直列に接続されている。そして、巻数パターン部４
ａと巻線パターン部４ｂは、図３の（ａ）に示すように
巻方向が異なるように巻回されている。The lower magnetic thin film layer 2 and the upper magnetic thin film layer 3
The edges 2a, 2b of the lower magnetic thin film layer 2 and the tips of the short sides 3a, 3b of the U-shaped portion of the upper magnetic thin film layer 3 come into contact with each other to form a magnetic closed circuit, thereby forming the magnetic thin film portion 7. ing. The conductor film 4 serving as the excitation coil is provided on the left portion 3a of the magnetic thin film portion 7.
And a winding pattern part 4 wound around the right portion 3b of the magnetic thin film part 7.
b are connected in series. And the number of turns pattern part 4
a and the winding pattern portion 4b are wound so that the winding directions are different as shown in FIG.
【００１１】信号コイルとしての導体膜５は、磁性薄膜
部７の左側部分３ａの周囲に巻回される巻線パターン部
５ａと、磁性薄膜部７の右側部分３ｂの周囲に巻回され
る巻線パターン部５ｂが直列に接続されている。そして
巻線パターン部５ａと巻線パターン５ｂは、図３の
（ｂ）に示すように巻方向が同方向に巻回されている。
この実施例薄膜型磁気センサを製造する際は、先ず基板
１の上に、下部磁性薄膜層２をスパッタ法等により形成
し、その上に絶縁膜６を形成する。次に、その上に導体
膜５により信号コイルを形成し、さらにその上に絶縁膜
６を形成し、次に導体膜４により励振コイルを形成し、
その上から絶縁膜６を形成し、続いてその上に上部磁性
薄膜層３を形成する。この際に、下部磁性薄膜２の両端
縁２ａ上面の絶縁膜６を除去し、上部磁性薄膜層３の短
辺部と下部磁性薄膜層２の両端縁２ａを磁気的に接続す
る。The conductor film 5 as a signal coil has a winding pattern portion 5a wound around the left portion 3a of the magnetic thin film portion 7 and a winding pattern portion 5b wound around the right portion 3b of the magnetic thin film portion 7. The line pattern portions 5b are connected in series. The winding patterns 5a and 5b are wound in the same winding direction as shown in FIG. 3B.
In manufacturing the thin film magnetic sensor of this embodiment, first, a lower magnetic thin film layer 2 is formed on a substrate 1 by a sputtering method or the like, and an insulating film 6 is formed thereon. Next, a signal coil is formed thereon by the conductor film 5, an insulating film 6 is further formed thereon, and then an excitation coil is formed by the conductor film 4,
An insulating film 6 is formed thereon, and then an upper magnetic thin film layer 3 is formed thereon. At this time, the insulating film 6 on the upper surface of both ends 2a of the lower magnetic thin film 2 is removed, and the short side of the upper magnetic thin film layer 3 and both ends 2a of the lower magnetic thin film layer 2 are magnetically connected.
【００１２】この実施例薄膜型磁気センサにおいて、励
振コイルとして使用される導体膜４の両端から上部磁性
薄膜層３及び下部磁性薄膜層２を磁気的に飽和させるの
に十分な交流電流を加えると、磁性薄膜部７の左側部分
７ａと右側部分７ｂに、逆方向の磁束が生じ、信号コイ
ルとしての導体膜５の巻線パターン部５ａと巻線パター
ン５ｂには、互いに逆方向に電圧が誘起され、導体膜５
の両端から検出電圧が導出されない。ここで、図２に示
すように、磁性薄膜部７の形成面に対して、垂直方向か
ら外部磁界Ｈが入ると、その磁界Ｈによる磁束が、導体
膜５の巻数パターン部５ａと巻数パターン部５ｂに鎖交
し、この２つの部分で、磁性薄膜層が励振電流により磁
気的に飽和するタイミングに差を生じ、磁界の強さに応
じた励振電流の２倍の周波数の交流電圧が導体膜５の両
端から導出される。In this thin-film magnetic sensor, when an alternating current sufficient to magnetically saturate the upper magnetic thin film layer 3 and the lower magnetic thin film layer 2 is applied from both ends of the conductor film 4 used as an excitation coil. A magnetic flux in the opposite direction is generated in the left portion 7a and the right portion 7b of the magnetic thin film portion 7, and a voltage is induced in the winding pattern portion 5a and the winding pattern 5b of the conductor film 5 as a signal coil in opposite directions. And the conductive film 5
No detection voltage is derived from both ends of. Here, as shown in FIG. 2, when an external magnetic field H is applied to the surface on which the magnetic thin film portion 7 is formed in a perpendicular direction, the magnetic flux generated by the magnetic field H causes the turn pattern portion 5 a and the turn pattern portion of the conductor film 5. 5b, a difference occurs in the timing at which the magnetic thin film layer is magnetically saturated by the excitation current in these two portions, and an alternating voltage of twice the frequency of the excitation current according to the strength of the magnetic field is applied to the conductive film. 5 are derived from both ends.
【００１３】次に、この発明の第２の実施例薄膜型磁気
センサについて説明する。図４は、この発明の一実施例
薄膜型磁気センサの断面図、図５は図４のＢ−Ｂで切断
した横断面図、図６は図４のＣ−Ｃで切断した横断面図
である（図４は、図５、図６のＡ−Ａで切断した縦断面
図である）。この実施例薄膜型磁気センサは、基板１１
上に形成された下部磁性薄膜層１２と、上部磁性薄膜層
１３と、この下部磁性薄膜層１２と上部磁性薄膜層１３
とを磁気的に接触させる複数個の磁気接触辺部１４と、
下部磁性薄膜層１２と上部磁性薄膜層１３間に形成さ
れ、励振コイルとして使用される導体膜１５と、同じく
下部磁性薄膜層１２と上部磁性薄膜層３間に形成され、
信号コイルとして使用される導体膜１６と、各部間の空
間を充たす絶縁膜１７とで構成されている。Next, a description will be given of a thin-film magnetic sensor according to a second embodiment of the present invention. 4 is a cross-sectional view of a thin film magnetic sensor according to one embodiment of the present invention, FIG. 5 is a cross-sectional view taken along line BB of FIG. 4, and FIG. 6 is a cross-sectional view taken along line CC of FIG. (FIG. 4 is a longitudinal sectional view cut along AA in FIGS. 5 and 6). The thin film magnetic sensor of this embodiment is
The lower magnetic thin film layer 12 formed thereon, the upper magnetic thin film layer 13, the lower magnetic thin film layer 12, and the upper magnetic thin film layer 13
A plurality of magnetic contact sides 14 for magnetically contacting
A conductive film 15 formed between the lower magnetic thin film layer 12 and the upper magnetic thin film layer 13 and used as an excitation coil, and also formed between the lower magnetic thin film layer 12 and the upper magnetic thin film layer 3;
It is composed of a conductor film 16 used as a signal coil and an insulating film 17 filling a space between each part.
【００１４】磁気接触辺部１４は、図５、図６に示すよ
うにマトリクス状に配置されている。励振コイルとして
の導体膜１５は、各列に３個の磁気接触辺部１４が設け
られる４列の磁気接触辺部列１４ａ、１４ｂ、１４ｃ、
１４ｄの周辺にジグザグに形成されるパターン部１５ａ
と、同じく左端を除いて接触辺部列１４ｂ、１４ｃ、１
４ｄの周辺をジグザグに形成されるパターン部１５ｂと
から構成され、両パターン部１５ａ、１５ｂは外部で直
列接続され、かつ導体膜１５に通電すると、各磁気接触
辺部列間の両パターン部１５ａ、１５ｂに流れる電流が
逆向きとなるように形成している。The magnetic contact sides 14 are arranged in a matrix as shown in FIGS. The conductor film 15 as the excitation coil includes four magnetic contact side rows 14a, 14b, 14c, in each of which three magnetic contact sides 14 are provided.
Pattern portion 15a formed in a zigzag around 14d
Similarly, except for the left end, the contact side row 14b, 14c, 1
4d are formed in a zigzag pattern around the periphery of the 4d. The two pattern portions 15a and 15b are connected in series externally, and when the conductive film 15 is energized, the two pattern portions 15a between the respective magnetic contact side rows are arranged. , 15b so that the currents flow in opposite directions.
【００１５】一方、信号コイルとしての導体膜１６は、
磁気接触辺部列１４ａ、１４ｂ、１４ｃ、１４ｄに対
し、各列において、外周を左下端から、上端を経て、さ
らに右下端に至るジグザグのパターン部を形成してい
る。この実施例薄膜型磁気センサを製造する際は、先ず
基板１１上に、スパッタ法等により、下部磁性薄膜層１
２を形成し、その上に絶縁膜１７を形成し、次に信号コ
イルとしての導体膜１６を形成する。On the other hand, the conductor film 16 as a signal coil is
For each of the magnetic contact side rows 14a, 14b, 14c, and 14d, a zigzag pattern portion is formed in each row from the lower left end to the upper end and further to the lower right end. When manufacturing the thin film type magnetic sensor of this embodiment, first, the lower magnetic thin film layer 1 is formed on the substrate 11 by sputtering or the like.
2, an insulating film 17 is formed thereon, and then a conductor film 16 as a signal coil is formed.
【００１６】次に、その上に絶縁膜１７を形成し、さら
にその上に励振コイルとしての導体膜１５を形成する。
そして、その上に絶縁膜１７を形成し、その上に上部磁
性薄膜１３を形成する。この際、絶縁膜１７を除去し
て、図２、図３に示すようにマトリクス状に、下部磁性
薄膜１２と上部磁性薄膜１３をつなげる磁気接触辺部１
４を形成する。Next, an insulating film 17 is formed thereon, and a conductive film 15 as an excitation coil is further formed thereon.
Then, an insulating film 17 is formed thereon, and an upper magnetic thin film 13 is formed thereon. At this time, the insulating film 17 is removed and the magnetic contact side portion 1 connecting the lower magnetic thin film 12 and the upper magnetic thin film 13 in a matrix as shown in FIGS.
4 is formed.
【００１７】この薄膜型磁気センサは、励振コイルとし
ての導体膜１５に下部磁性薄膜１２と上部磁性薄膜１３
を磁気的に飽和させるのに十分な交流電流を流すと、図
１に矢符で示すように、磁性薄膜の磁性接触辺部１４を
含む閉磁路に周回する磁界を発生する。この周回磁界に
より、信号コイルとしての導体膜１６に鎖交する磁束は
磁性接触辺毎に逆方向なので、導出電圧の総和は０とな
る。しかし、外部磁界Ｈが図１に示す矢符方向から印加
されると、これにより導体膜１６に励振電流周波数の２
倍の周波数の交流電圧を発生する。This thin film type magnetic sensor has a lower magnetic thin film 12 and an upper magnetic thin film 13 on a conductor film 15 as an excitation coil.
When an AC current sufficient to magnetically saturate the magnetic thin film is applied, a magnetic field circulating in a closed magnetic circuit including the magnetic contact side portion 14 of the magnetic thin film is generated as shown by an arrow in FIG. Due to this circulating magnetic field, the magnetic flux linked to the conductor film 16 as the signal coil is in the opposite direction for each magnetic contact side, so that the sum of the derived voltages is zero. However, when the external magnetic field H is applied from the direction of the arrow shown in FIG.
Generates an AC voltage with twice the frequency.
【００１８】[0018]
【発明の効果】この出願の特許請求の範囲の請求項１に
記載の発明によれば、平面デバイスとしての薄膜型磁気
センサにおいて、平面に対して垂直方向の磁界を検知す
ることができる。また請求項２に記載の発明によれば、
請求項１に記載の発明と同様に、平面に対して垂直方向
の磁界を検知することができるほか、信号コイル、励振
コイルとも平面コイル形状なので、導体抵抗を小さくで
きるため、Ｓ／Ｎの改善が見込める。According to the invention described in claim 1 of the present application, a thin film magnetic sensor as a flat device can detect a magnetic field perpendicular to a flat surface. According to the second aspect of the present invention,
Similarly to the first aspect of the present invention, a magnetic field in a direction perpendicular to a plane can be detected, and since the signal coil and the excitation coil have a planar coil shape, conductor resistance can be reduced, thereby improving S / N. Can be expected.
【図１】この発明の一実施例薄膜型磁気センサの要部拡
大斜視図である。FIG. 1 is an enlarged perspective view of a main part of a thin-film magnetic sensor according to an embodiment of the present invention.
【図２】図１のＡ−Ａで切断した同実施例薄膜型磁気セ
ンサの拡大断面図である。FIG. 2 is an enlarged cross-sectional view of the thin-film magnetic sensor of the embodiment cut along AA in FIG.
【図３】同実施例薄膜型磁気センサの励振コイル及び信
号コイルの巻方向を説明する図である。FIG. 3 is a diagram illustrating winding directions of an excitation coil and a signal coil of the thin-film magnetic sensor of the embodiment.
【図４】この発明の他の実施薄膜型磁気センサの拡大縦
断面図である。FIG. 4 is an enlarged vertical cross-sectional view of a thin-film magnetic sensor according to another embodiment of the present invention.
【図５】図４のＢ−Ｂで切断した同実施例薄膜型磁気セ
ンサの拡大横断面図である。FIG. 5 is an enlarged cross-sectional view of the thin-film magnetic sensor of the embodiment, taken along the line BB in FIG. 4;
【図６】図４のＣ−Ｃで切断した同実施例薄膜型磁気セ
ンサの拡大横断面図である。FIG. 6 is an enlarged cross-sectional view of the thin-film magnetic sensor of the embodiment cut along CC in FIG. 4;
【図７】一般的なフラックスゲート形磁気センサの原理
図である。FIG. 7 is a principle diagram of a general fluxgate magnetic sensor.
２ 下部磁性薄膜層 ３ 上部磁性薄膜層 ４ 第１の導体膜 ５ 第２の導体膜 ６ 絶縁膜 ７ 磁性薄膜部 2 Lower magnetic thin film layer 3 Upper magnetic thin film layer 4 First conductor film 5 Second conductor film 6 Insulating film 7 Magnetic thin film portion
Claims (2)
性薄膜層が２箇所で接触して閉磁路を形成する磁性薄膜
部と、この磁性薄膜部の内空部を基準にして左右の磁性
薄膜部に、左右でそれぞれ巻方向が異なるように巻回形
成される第１のコイル導体膜と、その第１のコイル導体
膜とは離隔して、前記左右の磁性薄膜部に、左右でそれ
ぞれ巻方向が同一となるように巻回形成される第２のコ
イル導体膜と、前記磁性薄膜部、第１のコイル導体膜、
及び第２のコイル導体膜間に充たされる絶縁膜とからな
る薄膜型磁気センサ。1. A magnetic thin-film layer comprising two magnetic thin-film layers, wherein the two magnetic thin-film layers are in contact at two locations to form a closed magnetic path, and a reference to an inner space of the magnetic thin-film section. A first coil conductor film wound around the left and right magnetic thin film portions so that the winding directions are different from each other, and the first coil conductor film is separated from the first coil conductor film by the left and right magnetic thin film portions. A second coil conductor film formed so that the winding directions are the same on the left and right, and the magnetic thin film portion, the first coil conductor film,
And a insulating film filled between the second coil conductor films.
磁性薄膜層が複数箇所で接触して、複数個の閉磁路を形
成する磁性薄膜部と、前記磁性薄膜層間に形成され、通
電すると、前記磁性薄膜部の各接触部に、磁性薄膜層と
垂直となる方向に一定方向の磁界を発生するように形成
される第１のコイル導体膜と、前記磁性薄膜層間に形成
され、通電すると、前記磁性薄膜部の各接触部に磁性薄
膜層と垂直となる方向で、かつ接触部の半数ずつ互いに
逆方向となる磁界を発生するように形成される第２のコ
イル導体膜と、前記磁性薄膜部、第１のコイル導体膜及
び第２のコイル導体膜間に充たされる絶縁膜とからなる
薄膜型磁気センサ。2. A magnetic thin film portion comprising two magnetic thin film layers, wherein the two magnetic thin film layers are in contact at a plurality of locations to form a plurality of closed magnetic paths, and formed between the magnetic thin film layers. A first coil conductor film formed so as to generate a magnetic field in a direction perpendicular to the magnetic thin film layer at each contact portion of the magnetic thin film portion when energized, and formed between the magnetic thin film layers. And a second coil conductor film formed so that when energized, a magnetic field is generated at each contact portion of the magnetic thin film portion in a direction perpendicular to the magnetic thin film layer and in opposite directions by half of the contact portions. And a thin film magnetic sensor comprising the magnetic thin film portion, an insulating film filled between the first coil conductor film and the second coil conductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31930193A JP3173262B2 (en) | 1993-12-20 | 1993-12-20 | Thin film magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31930193A JP3173262B2 (en) | 1993-12-20 | 1993-12-20 | Thin film magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07174835A JPH07174835A (en) | 1995-07-14 |
| JP3173262B2 true JP3173262B2 (en) | 2001-06-04 |
Family
ID=18108674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31930193A Expired - Fee Related JP3173262B2 (en) | 1993-12-20 | 1993-12-20 | Thin film magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3173262B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6853441B2 (en) * | 2019-04-24 | 2021-03-31 | 健二 飯島 | Magnetic sensor element, magnetic detector, motor with magnetic sensor element and device with magnetic detector |
-
1993
- 1993-12-20 JP JP31930193A patent/JP3173262B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07174835A (en) | 1995-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7208947B2 (en) | Fluxgate sensor integrated in a semiconductor substrate and method for manufacturing the same | |
| JP5037492B2 (en) | Magnetic sensor element and magnetic sensor | |
| US7145331B2 (en) | Magnetic sensor having a closed magnetic path formed by soft magnetic films | |
| JPH11513128A (en) | Magnetic field sensor with magnetoresistive bridge | |
| US9891293B2 (en) | Magnetic sensor device preventing concentration of magnetic fluxes to a magnetic sensing element | |
| JP2009111294A (en) | Magnetic coupler | |
| US6556007B1 (en) | Bearing sensor having magneto resistive elements | |
| JP7099731B2 (en) | Low noise reluctance sensor with multi-layer magnetic modulation structure | |
| JP2000249725A (en) | Manufacture of current sensor | |
| JP3712389B2 (en) | Magnetic field detection element integrated on printed circuit board and method for manufacturing the same | |
| US7176679B2 (en) | Sensor structure and magnetic field sensor | |
| KR20030074945A (en) | Fluxgate sensor integrated in semiconductor substrate and method for manufacturing the same | |
| JPWO2003081271A1 (en) | Magnetic detection element, magnetic detector, and manufacturing method thereof | |
| JP3173262B2 (en) | Thin film magnetic sensor | |
| US11821963B2 (en) | Magnetic sensor | |
| EP1018653B1 (en) | Magnetic sensor having soft magnetic metallic element formed in zigzag shape | |
| CA2267299A1 (en) | Magnetic impedance effect device | |
| US5721654A (en) | Magnetometric sensor magnetically isolated two regions formed of spin-polarized material and magnetic head using the same | |
| JPH08233927A (en) | Thin film flux gate magnetic sensor and manufacture thereof | |
| JP3449160B2 (en) | Magnetoresistive element and rotation sensor using the same | |
| JP4501858B2 (en) | Magneto-impedance element and current / magnetic field sensor | |
| JP4110468B2 (en) | Magneto-impedance element | |
| JP2004077231A (en) | Eddy current flaw detecting device | |
| EP1415170A1 (en) | Magnetic field sensor | |
| JP2005326373A (en) | Magnetic sensing element and magnetic detector using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080330 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090330 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100330 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100330 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110330 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110330 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120330 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120330 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130330 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |