JP3153892B2 - Optical module - Google Patents

Optical module

Info

Publication number
JP3153892B2
JP3153892B2 JP15222396A JP15222396A JP3153892B2 JP 3153892 B2 JP3153892 B2 JP 3153892B2 JP 15222396 A JP15222396 A JP 15222396A JP 15222396 A JP15222396 A JP 15222396A JP 3153892 B2 JP3153892 B2 JP 3153892B2
Authority
JP
Japan
Prior art keywords
groove
silicon substrate
light
optical module
laser diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15222396A
Other languages
Japanese (ja)
Other versions
JPH09329728A (en
Inventor
良二 加来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Aviation Electronics Industry Ltd
Original Assignee
Japan Aviation Electronics Industry Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Aviation Electronics Industry Ltd filed Critical Japan Aviation Electronics Industry Ltd
Priority to JP15222396A priority Critical patent/JP3153892B2/en
Publication of JPH09329728A publication Critical patent/JPH09329728A/en
Application granted granted Critical
Publication of JP3153892B2 publication Critical patent/JP3153892B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は光通信等に使用さ
れる光伝送用の光モジュールに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical module for optical transmission used for optical communication and the like.

【0002】[0002]

【従来の技術】従来提案されているこの種の光モジュー
ルの内部構成を図3に示す。シリコン基板11上に一対
の電極12,13が形成され、その一方の電極12上に
レーザダイオード(以下、LDと言う。)14が搭載さ
れる。LD14はフェイスダウン(発光部が下、即ち電
極12側)で、その信号電極が電極12に半田付けされ
て搭載され、一方上面に位置するGND電極はワイヤボ
ンディングにより電極13に電気的に接続される。図
中、15はワイヤ(リード線)を示す。
2. Description of the Related Art FIG. 3 shows the internal configuration of a conventional optical module of this type. A pair of electrodes 12 and 13 are formed on a silicon substrate 11, and a laser diode (hereinafter, referred to as LD) 14 is mounted on one of the electrodes 12. The LD 14 is face-down (the light-emitting portion is down, that is, the electrode 12 side), and its signal electrode is mounted by soldering to the electrode 12, while the GND electrode located on the upper surface is electrically connected to the electrode 13 by wire bonding. You. In the figure, reference numeral 15 denotes a wire (lead wire).

【0003】LD14の前面からの出射光は光ファイバ
16に入射される。この際、LD14と光ファイバ16
との十分な光の結合効率を得るためには、μm オーダの
極めて高精度のアライメント(光軸合わせ)が要求され
る。このため、シリコン基板11の板面には、その端縁
からLD14の前面に至るV溝17が、異方性エッチン
グにより高精度に形成され、このV溝17に光ファイバ
16の一端を収容して位置決め保持することにより、L
D14と光ファイバ16との正確なアライメントを実現
する構成とされている。
Light emitted from the front surface of the LD 14 enters an optical fiber 16. At this time, the LD 14 and the optical fiber 16
In order to obtain sufficient light coupling efficiency, extremely high-precision alignment (optical axis alignment) on the order of μm is required. Therefore, a V-groove 17 extending from the edge to the front surface of the LD 14 is formed on the plate surface of the silicon substrate 11 with high precision by anisotropic etching, and one end of the optical fiber 16 is accommodated in the V-groove 17. By holding the position
The configuration realizes accurate alignment between D14 and the optical fiber 16.

【0004】一方、LD14の後面側には後面からの出
射光を受光するフォトディテクタ(以下、PDと言
う。)18が配設され、後方出射光がこのPD18によ
ってモニタされる。PD18のモニタ出力はAPC(Au
to Power Control) 回路(図示せず)によってLD14
にフィードバックされ、これによりLD14の光量(パ
ワー)が一定となるように制御される。なお、PD18
はサブマウント19に搭載れ、このサブマウント19は
シリコン基板11と共にベース基板21に搭載されてい
る。
On the other hand, a photodetector (hereinafter, referred to as PD) 18 for receiving light emitted from the rear surface is provided on the rear surface side of the LD 14, and the backward emitted light is monitored by the PD 18. The monitor output of PD 18 is APC (Au
LD14 by a circuit (not shown)
, So that the light amount (power) of the LD 14 is controlled to be constant. In addition, PD18
Are mounted on a submount 19, and the submount 19 is mounted on a base substrate 21 together with the silicon substrate 11.

【0005】図4は上記した構成がパッケージ22内に
収容されてなる光モジュール23の外観形状を示したも
のである。パッケージ22からは光ファイバ16が導出
されており、またパッケージ22には電気接続用の複数
の端子ピン24が突設されている。
FIG. 4 shows an external shape of an optical module 23 in which the above-described configuration is housed in a package 22. The optical fiber 16 is led out of the package 22, and the package 22 has a plurality of terminal pins 24 for electrical connection.

【0006】[0006]

【発明が解決しようとする課題】ところで、LD14か
らの出射光は図5に矢印で示したように、例えば全角で
40°にも広がり、大きく拡散する。一方、LD14と
PD18の受光面との距離は、例えばシリコン基板11
のチッピングが生じやすいエッジ部を避けて電極12を
形成し、LD14を搭載するといったLD14実装上の
問題やPD18のシリコン基板11との衝突防止といっ
たPD18実装上の問題から、1mm程度は確保する必要
がある。
By the way, as shown by the arrow in FIG. 5, the light emitted from the LD 14 spreads, for example, as much as 40 ° in full-angle and diffuses greatly. On the other hand, the distance between the LD 14 and the light receiving surface of the PD 18 is, for example, the silicon substrate 11
It is necessary to secure about 1 mm from the problem of mounting the LD 14 by forming the electrode 12 and avoiding the edge portion where chipping easily occurs, and the mounting problem of the PD 18 such as preventing the PD 18 from colliding with the silicon substrate 11. There is.

【0007】また、APC回路によってLD14の光量
が一定となるように良好にフィードバック制御するため
には、モニタ用のPD18には、その帯域がLD14に
よる転送速度と同等のものを用いる必要があり、この場
合例えば1Gbps を越える高速データに対応可能なPD
18では、その受光部18aの径はφ50μm 程度と極
めて小径となる。
Further, in order to perform good feedback control by the APC circuit so that the light amount of the LD 14 becomes constant, it is necessary to use a monitor PD 18 having a band equivalent to the transfer speed of the LD 14, In this case, for example, a PD capable of handling high-speed data exceeding 1 Gbps
In 18, the diameter of the light receiving section 18 a is extremely small, about φ50 μm.

【0008】従って、これらLD出射角40°,LD・
PD間距離1mm及びPD受光径φ50μm といった寸法
関係から、PD18はLD14の出射光を有効に受光す
ることができず、大幅に受光量が減るため、APC回路
の動作不安定や動作不良を生じる原因となっていた。こ
の発明の目的は上述した問題点に鑑み、PDの受光量を
確保でき、よってAPC回路を安定に動作させることが
できる光モジュールを提供することにある。
Therefore, these LD emission angles of 40 °, LD ·
Due to the dimensional relationship such as the distance between PDs of 1 mm and the PD light receiving diameter of φ50 μm, the PD 18 cannot effectively receive the light emitted from the LD 14, and the amount of received light is greatly reduced, thereby causing unstable operation or malfunction of the APC circuit. Had become. SUMMARY OF THE INVENTION An object of the present invention is to provide an optical module capable of securing a light receiving amount of a PD and stably operating an APC circuit in view of the above-described problems.

【0009】[0009]

【課題を解決するための手段】請求項1の発明によれ
ば、レーザダイオードの前方出射光を光ファイバに入射
させ、そのレーザダイオードの後方出射光をフォトディ
テクタで受光してモニタする構造とされた光モジュール
において、レーザダイオードがシリコン基板上に搭載さ
れ、そのシリコン基板の板面におけるレーザダイオード
の前後に、その前後方向に延長されてそれぞれシリコン
基板の端縁に至る、それぞれ異方性エッチングにより同
一線上に形成された第1のV溝及び第2のV溝が形成さ
れ、第1のV溝に光ファイバの一端が位置決め保持さ
れ、第2のV溝の端縁にフォトディテクタが配置され
る。
According to the first aspect of the present invention, a structure is adopted in which forward emitted light from a laser diode is made incident on an optical fiber, and backward emitted light from the laser diode is received and monitored by a photodetector. In an optical module, a laser diode is mounted on a silicon substrate, and is anisotropically etched before and after the laser diode on the plate surface of the silicon substrate, extending in the front-rear direction and reaching the edge of the silicon substrate.
A first V-groove and a second V-groove formed on one line are formed, one end of the optical fiber is positioned and held in the first V-groove, and a photodetector is arranged on an edge of the second V-groove. .

【0010】又、第2のV溝の幅がフォトディテクタの
受光部の径とほぼ等しくされる。
Further , the width of the second V-groove is made substantially equal to the diameter of the light receiving portion of the photodetector.

【0011】[0011]

【発明の実施の形態】この発明の実施の形態を図面を参
照して実施例により説明する。図1はこの発明の一実施
例の内部構成を示したものである。なお、図3と対応す
る部分には同一符号を付し、その説明を省略する。この
例ではLD14の後方にもV溝31が設けられ、即ちシ
リコン基板11の板面におけるLD14の前後に、その
前後方向に延長されてそれぞれシリコン基板11の端縁
に至るV溝17及び31が形成されたものとされる。P
D18はサブマウント19に搭載され、その受光部18
aがV溝31の端縁に近接して位置するように配設され
る。
Embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 shows the internal configuration of an embodiment of the present invention. Parts corresponding to those in FIG. 3 are denoted by the same reference numerals, and description thereof is omitted. In this example, V-grooves 31 are also provided behind the LD 14, that is, before and after the LD 14 on the plate surface of the silicon substrate 11, V-grooves 17 and 31 extending in the front-rear direction and reaching the edges of the silicon substrate 11, respectively. It is assumed to have been formed. P
D18 is mounted on the submount 19,
a is disposed so as to be located close to the edge of the V-groove 31.

【0012】この構成によれば、フェイスダウンで実装
されたLD14の後面側から出射された後方出射光のう
ち、V溝31に入射した光は図2に矢印で示したように
V溝31の壁面によって反射され、即ち横方向(V溝3
1の幅方向)への拡散が防止されるため、PD18の受
光量はこのV溝31のないものに比し、大幅に増大す
る。従って、PD18は所要の受光量を確保可能とな
る。
According to this configuration, of the backward emission light emitted from the rear surface side of the LD 14 mounted face-down, the light incident on the V-groove 31 is, as shown by an arrow in FIG. Reflected by the wall surface, ie, in the lateral direction (V-groove 3
1 is prevented, the amount of light received by the PD 18 is greatly increased as compared with the case where the V-groove 31 is not provided. Therefore, the PD 18 can secure a required amount of received light.

【0013】なお、V溝31の幅を、PD18の受光部
18aの径とほぼ等しい値に設定した場合が、光量増に
対して特に有効となる。シリコン基板11へのV溝1
7,31の形成はKOH等のウェットエッチングによっ
て行われ、電極12,13はTi /Pt/Auあるいは
Cr/Au等をスパッタすることによってシリコン基板
11上に形成される。LD14は例えば電極12上に蒸
着によって作製したAu/Sn等の半田で半田付けして
実装し、光ファイバ16はUV接着剤等の接着剤あるい
は半田を用いてV溝17に固定する。V溝17,31,
電極12,13及び電極12上の半田等のパターニング
は全てフォトリソグラフィによって行うことができ、よ
って高精度で相互の位置決めを行うことができる。
The case where the width of the V-groove 31 is set to a value substantially equal to the diameter of the light receiving portion 18a of the PD 18 is particularly effective for increasing the amount of light. V-groove 1 into silicon substrate 11
The electrodes 7 and 31 are formed by wet etching such as KOH, and the electrodes 12 and 13 are formed on the silicon substrate 11 by sputtering Ti / Pt / Au or Cr / Au. The LD 14 is mounted, for example, by soldering Au / Sn or the like on the electrode 12 by vapor deposition, and the optical fiber 16 is fixed to the V-groove 17 using an adhesive such as a UV adhesive or solder. V-grooves 17, 31,
Patterning of the electrodes 12, 13 and the solder or the like on the electrodes 12 can all be performed by photolithography, so that mutual positioning can be performed with high accuracy.

【0014】光モジュールはこの図1に示した構成がパ
ッケージ22内に収容されて構成され、即ち外観形状は
図4と同様のものとなる。なお、上述した例ではPD1
8をサブマウント19に搭載した後、サブマウント19
をベース基板21に固定する構造としているが、例えば
シリコン基板11に直接PD18を搭載することも可能
である。
The optical module shown in FIG. 1 is housed in a package 22. That is, the optical module has the same appearance as that shown in FIG. In the above example, PD1
8 is mounted on the submount 19,
Is fixed to the base substrate 21, but it is also possible to mount the PD 18 directly on the silicon substrate 11, for example.

【0015】[0015]

【発明の効果】以上説明したように、この発明によれば
シリコン基板11に設けた導光用のV溝31により、L
D14の後方出射光の横拡散が抑制され、光が有効にP
D18に導かれるため、PD18は十分な光量を得るこ
とができる。よって、このPD18を用いるAPC回路
を良好に動作させることが可能となる。
As described above, according to the present invention, the light guide V-groove 31 provided in the silicon substrate 11 allows the
Lateral diffusion of the backward emission light of D14 is suppressed, and the light is effectively P
Since the light is guided to D18, the PD 18 can obtain a sufficient amount of light. Therefore, the APC circuit using the PD 18 can be operated well.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の実施例を説明するための斜視図。FIG. 1 is a perspective view for explaining an embodiment of the present invention.

【図2】図1の平面図。FIG. 2 is a plan view of FIG. 1;

【図3】従来提案されている光モジュールの内部構成を
示す斜視図。
FIG. 3 is a perspective view showing the internal configuration of a conventionally proposed optical module.

【図4】光モジュールの外観形状を示す斜視図。FIG. 4 is a perspective view showing an external shape of the optical module.

【図5】図3の平面図。FIG. 5 is a plan view of FIG. 3;

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 レーザダイオードの前方出射光を光ファ
イバに入射させ、そのレーザダイオードの後方出射光を
フォトディテクタで受光してモニタする構造とされた光
モジュールであって、 上記レーザダイオードがシリコン基板上に搭載され、 そのシリコン基板の板面における上記レーザダイオード
の前後に、その前後方向に延長されてそれぞれ上記シリ
コン基板の端縁に至る、それぞれ異方性エッチングによ
り同一線上に形成された第1のV溝及び第2のV溝が形
成され、 上記第1のV溝に上記光ファイバの一端が位置決め保持
され、 上記第2のV溝の端縁に上記フォトディテクタが配置さ
れていることを特徴とする光モジュール。
1. An optical module having a structure in which forward emitted light from a laser diode is made incident on an optical fiber, and backward emitted light from the laser diode is received and monitored by a photodetector, wherein the laser diode is mounted on a silicon substrate. The laser diode on the surface of the silicon substrate before and after the laser diode, extending in the front-rear direction and reaching the edge of the silicon substrate , respectively, by anisotropic etching.
A first V-groove and a second V-groove formed on the same line , one end of the optical fiber is positioned and held in the first V-groove, and the edge of the second V-groove is An optical module comprising a photodetector.
JP15222396A 1996-06-13 1996-06-13 Optical module Expired - Fee Related JP3153892B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15222396A JP3153892B2 (en) 1996-06-13 1996-06-13 Optical module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15222396A JP3153892B2 (en) 1996-06-13 1996-06-13 Optical module

Publications (2)

Publication Number Publication Date
JPH09329728A JPH09329728A (en) 1997-12-22
JP3153892B2 true JP3153892B2 (en) 2001-04-09

Family

ID=15535783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15222396A Expired - Fee Related JP3153892B2 (en) 1996-06-13 1996-06-13 Optical module

Country Status (1)

Country Link
JP (1) JP3153892B2 (en)

Also Published As

Publication number Publication date
JPH09329728A (en) 1997-12-22

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