JP3149630B2 - Solid-state imaging device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device using a solid-state imaging device, and more particularly, to a reduction in the size and diameter of a solid-state imaging device having a solid-state imaging device with an on-chip lens function.

[0002]

2. Description of the Related Art FIG. 4 shows a conventional example of a solid-state imaging device having an on-chip lens function. This will be described below with reference to the drawings.

A transparent resin 5 integrally mounted on a solid-state image sensor 1 mounted on a lead frame 6 and wired by bonding wires 8 and an on-chip lens 9 provided on the upper surface of the solid-state image sensor 1 A supporting frame 2 is provided so as to surround the solid-state imaging device 1 on a lead frame 6, and a light transmitting glass 4 is mounted on an upper surface of the supporting frame 2, whereby an on-chip lens 9 is formed. This is a solid-state imaging device in which a space 7 is formed between the light transmitting glass 4 and the light transmitting glass 4 so as not to impair the function of the on-chip lens 9.

FIG. 5 shows a conventional example of a solid-state imaging device having a small size and a small diameter. This will be described below with reference to the drawings.

[0005] The inner lead 3 of the film carrier 2 is attached to the electrode 6a of the solid-state imaging device 1 with the on-chip lens 9.
Bonding the light transmitting glass 4 is mounted via the adhesive layer 5 to the on-chip pre-lens 9 with the solid-state imaging device 1, on-
Soldered outer leads 7 of the film carrier 2 to the electrode portion 6a of the drive circuit block 6 adhered to the pre-lens 9 with the solid-state imaging device 1, and housed in the exterior chassis 8, sealed compact, small diameter solid imaging Device.

These solid-state imaging devices are disclosed in, for example,
No. 13738.

[0007]

In the prior art shown in FIG. 4, however, the gap between the solid-state imaging device 1 and the light transmitting glass 4 is several tens of microns, and the function of the on-chip lens 9 is not impaired. Since the support frame 2 for forming the space 7 is outside the solid-state imaging device 1, the entire device cannot be downsized. There is also a case where the support frame 2 is formed of laminated ceramics, but it is expensive and not practical. Further, the support frame 2 is used for the solid-state imaging device 1.
As a spacer to determine the gap between the light transmitting glass 4
It is necessary to control its thickness because it has all the functions.
Further, the role of a sealing material for sealing the solid-state imaging device 1
It also has a considerable width so that there is no gap
In addition, it was necessary to form it in a flat plate shape. So
Therefore, the gap between the solid-state imaging device 1 and the light transmitting glass 4
Control is difficult and the area occupied by the support frame 2 is large.
Had the title.

In the conventional example shown in FIG. 5, the outer lead 7 of the film carrier 2 is moved approximately 9 near the solid-state image pickup device 1.
After bending to 0 °, the electrode portion 6a of the drive circuit block 6
Although the size is reduced and the diameter is reduced because the structure is such that the bonding layer 5 is interposed between the solid-state imaging device 1 with the on-chip lens 9 and the light transmitting glass 4, the bonding layer 5 is formed. However, this has a problem in that the function of the on-chip lens 9 is impaired because it covers the on-chip lens 9.

An object of the present invention is to provide a solid-state imaging device having a light transmitting member that is reduced in size and diameter without impairing the function of the on-chip lens.

Another object of the present invention is to provide a method of manufacturing a solid-state imaging device having a light transmitting member that does not impair the function of an on-chip lens.

[0011]

In order to achieve this object, a solid-state imaging device according to the present invention comprises a solid-state imaging device having an on-chip lens provided on an upper surface thereof .
On the surface, and a space is formed between said light transmissive member a solid-state imaging device by providing a light transmitting member through a plurality of resin bumps provided outside the light receiving area, further
The entire periphery of the side surfaces of the plurality of resin bumps is sealed with resin .

According to another aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device, comprising: dropping a photocurable resin on a surface outside a light receiving region of a solid-state imaging device provided with an on-chip lens on an upper surface; bonding the light transmitting member in the light-curing resin, thereby forming a plurality of resin bumps by curing the photocurable resin, bonding the members for optical transmission and the solid-state imaging device via a plurality of resin bumps And the plurality of resin buses.
The entire periphery of the pump is sealed with resin .

Further , a more preferred solid-state imaging device of the present invention
The solid-state imaging method with an on-chip lens on the top
Drop the photocurable resin on the surface outside the light receiving area of the image element, and once
A plurality of resin vans, which are obtained by curing the photocurable resin to form a first stage.
After forming the bumps, light hardening is further performed on the plurality of resin bumps.
A light transmitting member is contacted with the photocurable resin by dropping a curing resin.
And curing the photo-curable resin to form the plurality of resin bumps.
Are formed in multiple stages, and through the plurality of resin bumps.
To join the solid-state imaging device and the light transmitting member,
Seal all sides of multiple resin bumps with resin
It is characterized by doing so.

[0014]

According to this structure, the plurality of resin bumps can be made transparent.
Support the excess member, and between the light transmission member and the solid-state image sensor.
Act as a spacer to keep the gap of Resin bump
The spacer consisting of
With a predetermined gap, a small amount of coating is required.
Even if a light transmitting member is joined to the solid-state image sensor, resin bumps
The spread of the gap is small, and the gap can be easily controlled. Ma
In addition, since the area occupied by the resin bumps is reduced,
The used solid-state imaging device surface can be used effectively. Also for light transmission
Side surfaces of multiple resin bumps joining the member and the solid-state image sensor
The resin that seals the entire circumference has already been
Can be formed after an appropriate gap is secured
Therefore, the distance between the solid-state imaging device and the light transmitting member is determined.
There is no need to act as a pacer, and the resin thickness is controlled.
No need for control, application area can be reduced, and sealing material is formed
Thus, a solid-state imaging device with an on-chip lens having a small size and a small diameter can be realized without deteriorating the functional performance of the on-chip lens.

Further , according to this manufacturing method, the plurality of resin bumps support the light transmitting member, and the solid-state image pickup device and the light transmitting member are joined while maintaining a fixed distance.
Limited occupation area of the pacer and limited solid-state imaging
The element surface can be used effectively. Also, in this manufacturing method, light
Side surface of the resin bump that joins the transmission member and the solid-state image sensor
Resin that seals the entire circumference serves as a spacer
No need to control the thickness of the resin,
The product can be made small, the sealing material can be easily formed , and the functional performance of the on-chip lens is not impaired.

[0016]

(Embodiment 1) Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic sectional view of a solid-state imaging device with an on-chip lens mounted on a film carrier according to a first embodiment of the present invention. In the figure, 1 is a solid-state imaging device,
4 is a light transmitting glass which is a light transmitting member, and 10 is a plural form.
The formed resin bumps 15 are spaces.

A drive circuit block 6 is adhered to the solid-state imaging device 1 having an on-chip lens 9 provided on the upper surface.
The inner leads 3 of the film carrier 2 are joined to the electrode portions 6a of the drive circuit block 6. The outer leads 7 of the film carrier 2 are soldered to the electrode portions 6a, and are housed and sealed in the exterior chassis 8.

The solid-state imaging device 1 of the light-receiving region excluding solid-state imaging device 1 on the surfaces of the plurality of resin bumps 10 are formed, the solid-state imaging device 1 via these resin bump 10
A glass 15 for light transmission is mounted on the solid-state imaging device 1, and a space 15 is formed on the surface of the solid-state imaging device 1.

Next, a manufacturing method of the present invention will be described with reference to FIG.

First, the upper surface of the inner lead 3 of the film carrier 2 joined to the electrode 6a of the solid-state imaging device 1 is selectively
The photocurable resin 10 is dropped. At this time, the drop region is on the surface of the solid-state imaging device 1 excluding the light-receiving region of the solid-state imaging device 1 (FIG. 2A).

Next, the light transmission glass 4 is moved until the distance from the on-chip lens 9 becomes constant, for example, 200 to 300.
Then, the light-curing resin 10 is brought into contact with the glass for light transmission 4 (FIG. 2B).

Next, a plurality of resin bumps 10 are formed by irradiating light to cure the photo-curable resin 10, and the light transmitting glass 4 and the fixed image pickup device 1 are joined to form a solid image pickup device 1 surface. A space 15 is formed above (FIG. 2
(C)).

Further, in order to prevent dust from entering through gaps between the plurality of resin bumps 10, the entire periphery of the side surface of the solid-state imaging device 1 with the glass for light transmission 4 is covered with resin 11 and the gap is sealed (FIG. 2D). ).

Next, the solid-state imaging device 1 and the drive block 6 are joined, and the outer leads 7 of the film carrier 2 and the electrode portions 6a of the drive block 6 are joined by soldering (FIG. 2).
(E)).

The imaging unit A is completed as described above. Next, the imaging unit A is housed in the exterior chassis 8, and both openings are resin-sealed with the optical glass 12 and the sealing plate 13 (FIG. 2 (f)). )) To obtain the solid-state imaging device shown in FIG.

The light transmitting resin may be used instead of the light transmitting glass 4, and the optical glass 12 may be an optical filter.

As described above, according to the first embodiment, the plurality of resin bumps 10 are interposed between the surface of the solid-state imaging device 1 outside the light receiving region of the solid-state imaging device 1 and the glass 4 for light transmission. 15 are formed , and a gap between a plurality of resin bumps is further formed.
The entire side of the resin bump is sealed to fill
And for which, compact without impairing the function of the on-chip lens 9, which is smaller in diameter, it is possible to realize the on-chip lens 9 with the solid-state imaging device.

(Embodiment 2) In the solid-state imaging device having a light transmitting member, when a flaw or dust adheres to the lower surface of the light transmitting member (surface close to the solid-state image sensor side), the lower surface of the light transmitting member is removed. By keeping the distance from the solid-state image sensor sufficiently long, the image of the flaws and dust does not focus on the surface of the solid-state image sensor, so that the flaws and dust are less noticeable, and the defect rate is greatly reduced. For this purpose, a high bump may be formed, and an example of a two-stage bump will be described as an example.

FIG. 3 schematically shows a manufacturing process when the resin bumps are formed in two stages. First, a photo-curing resin 10 is selectively dropped on the upper surface of the inner lead 3 joined to the electrode of the solid-state imaging device 1 to form the first-stage bump. At this time, the drop region is on the surface of the solid-state imaging device 1 excluding the light-receiving region of the solid-state imaging device 1 (FIG. 3).
(A)).

[0031] Next, the light irradiation for forming a plurality of resin bumps 10 of the first stage by curing the photocurable resin 10 (Figure 3 (b)).

Next, in order to form the second-stage resin bump 14 on the first-stage resin bump 10, the same photo-curing resin 14 as the first-stage resin bump is selectively dropped on the first-stage bump . (FIG. 3 (c)).

The following is shown in the first embodiment (FIG. 2)
(B)) The light transmitting glass 4 is placed on the two-stage resin bumps 10 and 14 by the same manufacturing method as that described below.
Is adhered so as to keep the distance to, for example, 500 microns, and the photocurable resin 14 is cured (FIG. 3D).

As described above, according to the second embodiment, the distance between the solid-state image pickup device 1 and the light transmitting glass 4 can be made sufficiently long. Even if dust adheres, it becomes less noticeable, and the defective rate of dust and flaws is greatly reduced.

[0035]

According to the present invention, a plurality of resin bumps are
To support the transmission member, the thickness on the surface of the solid-state
It is no longer necessary to form uniform spacers in a planar shape.
Distance between the light transmission member and the solid-state image sensor.
It is easy to keep and acts as a spacer
The area occupied by the resin bumps can be reduced,
The solid-state imaging device surface can be used effectively. In addition, multiple resin
The resin that seals the entire periphery of the pump
Acts as a spacer to determine the distance between the
It is not necessary to control the thickness of the resin.
The area can be made small and the sealing material can be easily formed
As a result, it is possible to realize a solid-state imaging device with an on-chip lens that is reduced in size and diameter without impairing the functional performance of the on-chip lens.

Further, by stacking the plurality of resin bumps in several stages and making the distance between the solid-state imaging device surface and the light transmitting member sufficiently long, even if a flaw or dust adheres to the lower surface of the light transmitting member, it becomes less noticeable. The defective rate of garbage and flaws is greatly reduced.

The method of manufacturing a solid-state imaging device according to the present invention
Multiple resin bumps outside the light receiving area on the surface of the solid-state image sensor
Can be selectively dropped and form spacers in place
Therefore, the area occupied by the resin bump acting as a spacer is
It is small and can effectively use a limited solid-state image sensor surface
This is a method for manufacturing a solid-state imaging device. In addition, a plurality of resin bus emissions
When sealing the entire circumference of the side of the
Is hardened to form a space with a controlled gap
It is not necessary to control the resin thickness
The area can be reduced, and the formation of the sealing material is facilitated.

Further another method for manufacturing a solid-state imaging device of the present invention is to form a resin bump formed in a plurality of multistage
Distance between the light transmitting member and the solid-state imaging device
It is possible to join with keeping the separation
Bumps selectively drop outside the light receiving area on the surface of the solid-state image sensor
Space, and a spacer can be formed at a predetermined position.
The area occupied by the resin bumps acting as
Solid-state imaging that can effectively use the limited solid-state imaging device surface
This is a method for manufacturing an element. In addition, a plurality of multi-stage formed
When sealing the entire side of the resin bump,
Resin bumps are cured and the gap is controlled
No need to control the resin thickness because the gap is formed
The coating area can be reduced, and the sealing material can be easily formed.
become.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a schematic sectional view showing a manufacturing process of the solid-state imaging device shown in FIG.

FIG. 3 is a schematic cross-sectional view illustrating a manufacturing process of the solid-state imaging device according to the second embodiment of the present invention.

FIG. 4 is a schematic sectional view of a conventional solid-state imaging device.

FIG. 5 is a schematic sectional view of a conventional solid-state imaging device having a small size and a small diameter.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 solid-state imaging device 4 glass for light transmission (member for light transmission) 9 on-chip lens 10 plural resin bumps 15 space

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-63-213373 (JP, A) JP-A-1-300572 (JP, A) JP-A-4-258165 (JP, A) JP-A-5-213 13738 (JP, A) JP-A-5-115435 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 27/14 H04N 5/335

Claims (3)

(57) [Claims] An optical transmission member is provided above a solid-state imaging device having an on-chip lens provided on an upper surface thereof, via a plurality of resin bumps provided on the surface of the solid-state imaging device and outside a light receiving region. a space is formed between the solid-state imaging device and the light transmissive member by further plurality of resin Ba
A solid-state imaging device characterized in that the entire periphery of the side surface of the pump is sealed with resin . 2. A dropping a photocurable resin on the surface outside the light receiving region of the solid-state imaging device provided with an on-chip lens on the upper surface, bonding the light transmitting member to the <br/> photocurable resin, the light thereby forming a plurality of resin bumps by curing the curable resin, the double
Through the number of resin bumps bonding the light transmitting member and the solid-state imaging device, further aspects of the plurality of resin bumps
A method for manufacturing a solid-state imaging device, wherein the entire periphery is sealed with resin . 3. A solid-state imaging device having an on-chip lens on its upper surface.
Drop the photocurable resin on the surface outside the light receiving area of the image element, and once
A plurality of resin vans, which are obtained by curing the photocurable resin to form a first stage.
After forming the bumps, light hardening is further performed on the plurality of resin bumps.
A light transmitting member is contacted with the photocurable resin by dropping a curing resin.
And curing the photo-curable resin to form the plurality of resin bumps.
Are formed in multiple stages, and through the plurality of resin bumps.
To join the solid-state imaging device and the light transmitting member,
Seal all sides of multiple resin bumps with resin
A method for manufacturing a solid-state imaging device, characterized in that: