JP3135727B2 - Method of forming pad portion of infrared sensor - Google Patents
Method of forming pad portion of infrared sensorInfo
- Publication number
- JP3135727B2 JP3135727B2 JP04342903A JP34290392A JP3135727B2 JP 3135727 B2 JP3135727 B2 JP 3135727B2 JP 04342903 A JP04342903 A JP 04342903A JP 34290392 A JP34290392 A JP 34290392A JP 3135727 B2 JP3135727 B2 JP 3135727B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio
- pad portion
- pad
- serving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 58
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 17
- 239000002344 surface layer Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
【0001】[0001]
【産業上の利用分野】この発明は、温度による抵抗値の
変化を利用して赤外線を検出する赤外線センサを製造す
る過程で行われるパッド部の形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a pad portion in a process of manufacturing an infrared sensor for detecting infrared rays by using a change in resistance value with temperature.
【0002】[0002]
【従来の技術】図3に従来の赤外線センサの一例を示
す。基板1上には熱絶縁性膜2が形成されており、その
上に検知部3が形成されている。基板1は、検知部3の
中央部に当たる部分の下側が空洞になっていて、検知部
3の熱絶縁性を一層高めている。熱絶縁性の膜2は、通
常、SiO2 層とSi3 N4 層が交互に形成された多層
膜で構成され、少なくとも一部の表層(最上層)はSi
O2 層21からなる。検知部3は、薄膜サーミスタ上に
赤外線吸収層が積層形成されてなる。この薄膜サーミス
タは、アモルファスシリコンカーバイド等のアモルファ
ス合金などからなる、温度変化に応じて抵抗値が変化す
る抵抗体層31を上下からCr等の電極32、33で挟
んだサンドイッチ構造のものであり、この薄膜サーミス
タ上に赤外線吸収層となるSiO2 膜34が積層形成さ
れている。図の左側部分には、表層がSiO2 層21と
なった熱絶縁性膜上にパッド部4が形成されている。2. Description of the Related Art FIG. 3 shows an example of a conventional infrared sensor. A heat insulating film 2 is formed on a substrate 1, and a detection unit 3 is formed thereon. The substrate 1 has a hollow portion below the portion corresponding to the central portion of the detection unit 3, thereby further improving the thermal insulation of the detection unit 3. The heat insulating film 2 is usually composed of a multilayer film in which SiO 2 layers and Si 3 N 4 layers are alternately formed, and at least a part of the surface layer (top layer) is made of Si.
It consists of an O 2 layer 21. The detection unit 3 is formed by laminating an infrared absorption layer on a thin film thermistor. This thin-film thermistor has a sandwich structure in which a resistor layer 31 made of an amorphous alloy such as amorphous silicon carbide or the like whose resistance value changes according to a temperature change is sandwiched between electrodes 32 and 33 such as Cr from above and below. On this thin-film thermistor, an SiO 2 film 34 serving as an infrared absorbing layer is formed by lamination. On the left side of the figure, a pad portion 4 is formed on a heat insulating film whose surface layer is an SiO 2 layer 21.
【0003】このパッド部4を形成する場合には、電極
32となる導体層をSiO2 層21上に形成したのち、
この導体層上に赤外線吸収層となるSiO2 膜34を形
成し、このSiO2 膜34のパッド部4上側に当たる部
分をエッチング除去して電極32となる導体層の一部を
露出させたのち、露出した電極導体上にパッド用の導体
層35を形成するようにしている。パッド用の導体層
は、たとえばAl等で形成される。In forming the pad portion 4, a conductor layer serving as the electrode 32 is formed on the SiO 2 layer 21 and then formed.
An SiO 2 film 34 serving as an infrared absorbing layer is formed on the conductor layer, and a portion of the SiO 2 film 34 above the pad portion 4 is removed by etching to expose a part of the conductor layer serving as the electrode 32. The conductor layer 35 for the pad is formed on the exposed electrode conductor. The conductor layer for the pad is formed of, for example, Al or the like.
【0004】[0004]
【発明が解決しようとする課題】ところが、パッド部4
における一点鎖線で囲んだ部分には、以下のような問題
がある。すなわち、このとき、電極となる導体層が薄い
等の理由で、導体層にピンホールが生じていると、赤外
線吸収層となるSiO2 膜34をエッチング除去する際
に、ピンホールからしみ込んだエッチング液(エッチャ
ント。バッファードフッ酸等)が導体層の下のSiO2
層21にまで達して、この層21を部分的に浸食する。
そのため、浸食されたSiO2 層がパッド部の電極導体
層もろとも剥がれてしまうことがあると言う問題があっ
た。However, the pad portion 4
In the portion surrounded by the dashed line in the above, there are the following problems. That is, at this time, if a pinhole is formed in the conductor layer because the conductor layer serving as the electrode is thin, etc., when the SiO 2 film 34 serving as the infrared absorption layer is removed by etching, the etching penetrated from the pinhole occurs. The liquid (etchant, buffered hydrofluoric acid, etc.) is mixed with SiO 2 under the conductor layer.
As far as the layer 21, this layer 21 is partially eroded.
Therefore, there is a problem that the eroded SiO 2 layer may be peeled off together with the electrode conductor layer of the pad portion.
【0005】そこで、この発明は、たとえば、電極とな
る導体層の膜厚を小さくしても、上述のようなパッド部
の剥離が起きないパッド部の形成方法を提供することを
課題とする。Accordingly, an object of the present invention is to provide a method for forming a pad portion in which the above-described peeling of the pad portion does not occur even if the thickness of the conductor layer serving as an electrode is reduced.
【0006】[0006]
【課題を解決するための手段】この発明にかかる赤外線
センサのパッド部の形成方法は、上記課題を解決するた
め、少なくとも一部の表層がSiO2 からなる熱絶縁性
の膜上に検知部となる薄膜サーミスタと赤外線吸収層が
積層形成されてなる赤外線センサを製造するにあたり、
前記SiO2 表層上に前記サーミスタの電極となる導体
層を形成し、その上に前記赤外線吸収層となるSiO2
膜を形成したのちに、このSiO2 膜をエッチング除去
して前記導体層中のパッド部となる部分を露出させ、こ
の露出部分にパッド用の導体層を形成する方法であっ
て、前記電極となる導体層を形成する前に、SiO2 表
層中の前記パッド部下側に当たる部分を予めエッチング
除去しておき、前記電極となる導体層を前記SiO 2 表
層のエッチング除去部分の内部からSiO 2 表層の表面
までにわたって形成しておくことを特徴とする。Means for Solving the Problems] method of forming a pad portion of the infrared sensor according to the present invention, for solving the above problems, a detection portion of the at least some surface layer on the thermal insulating layer of SiO 2 In manufacturing an infrared sensor formed by laminating a thin film thermistor and an infrared absorption layer,
Wherein forming a conductive layer serving as a thermistor electrode on the SiO 2 surface layer on, serving as the infrared absorbing layer thereon SiO 2
After forming the film, the SiO 2 film is removed by etching to expose a portion serving as a pad portion in the conductor layer, and a conductor layer for a pad is formed on the exposed portion. Before forming a conductor layer made of SiO 2 , a portion corresponding to the lower side of the pad portion in the SiO 2 surface layer is removed by etching in advance, and the conductor layer serving as the electrode is made of the SiO 2 surface layer.
The surface of the SiO 2 surface layer from inside the etched portion of the layer
It is characterized in that it is formed up to
【0007】[0007]
【作用】このように、パッド部となる部分の下側にSi
O2 層(熱絶縁性膜の表層)がない状態にしておくと、
電極となる導体層上のSiO2 層(赤外線吸収層)のエ
ッチングを行ったときに、前記導体層のピンホールを通
してエッチング液がパッド部の下側に達しても、そこに
はSiO2 層がないので、浸食が起きず、パッド部の剥
離が起きない。As described above, the Si portion is formed below the portion to be the pad portion.
If there is no O 2 layer (surface layer of the heat insulating film),
When the SiO 2 layer (infrared absorbing layer) on the conductor layer serving as an electrode is etched, even if the etching solution reaches the lower side of the pad portion through the pin hole of the conductor layer, the SiO 2 layer is there. Since there is no erosion, the pad does not peel off.
【0008】[0008]
【実施例】以下に、この発明の実施例を図1を参照しな
がら、詳しく説明するが、この発明は、以下のこの実施
例により何等制約をうけるものでない。まず、図1の
(a)にみるように、シリコン基板上に堆積した熱絶縁
性膜中のSiO2 表層(最上層)21のパッド部下側と
なる部分に、図1の(b)にみるように、フォトリソグ
ラフ工程でパターニングし、その部分をエッチング液
(バッファードフッ酸)で除去した。ついで、図1の
(c)にみるように、基板温度を室温とした状態で、電
子ビーム蒸着法により電極となるCr導体層を、SiO
2 表層21上の厚み1000オングストロームで成膜
し、フォトリソグラフ工程でパターニングして下部Cr
電極32を形成したのち、図1の(d)にみるように、
赤外線吸収層としてのSiO2 層34をグロー放電分解
法によって堆積した。つぎに、図1の(e)にみるよう
に、パッド部に重なっているSiO2 層34をフォトリ
ソグラフ工程でパターニングしてエッチング除去し、パ
ッド部となる部分のCr電極32を露出させたのち、図
1の(f)にみるように、基板温度を室温とした状態
で、電子ビーム蒸着法によりAl層(パッド用の導体
層)35を、SiO2 層34上に厚み1μmで成膜し、
フォトリソグラフ工程でパターニングしてパッド部4を
形成した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
However, the present invention will be described in detail below.
No restrictions are imposed by the examples. First, in FIG.
As shown in (a), thermal insulation deposited on a silicon substrate
SiO in conductive filmTwoWith the lower side of the pad portion of the surface layer (top layer) 21
As shown in FIG. 1 (b), the photolithography
Patterning in the rough process
(Buffered hydrofluoric acid). Then, in FIG.
As shown in (c), when the substrate temperature is room temperature,
The Cr conductor layer, which is to be an electrode by the
TwoDeposited on the surface layer 21 with a thickness of 1000 Å
Patterning in the photolithographic process
After forming the electrode 32, as shown in FIG.
SiO as infrared absorption layerTwoGlow discharge decomposition of layer 34
Deposited by the method. Next, as shown in FIG.
And SiO that overlaps the padTwoLayer 34
It is patterned and removed by etching in
After exposing the portion of the Cr electrode 32 that will become the pad portion,
As shown in FIG. 1 (f), the state where the substrate temperature was set to room temperature
Then, an electron beam evaporation method is used to form an Al layer (a conductor for pads).
Layer 35 is made of SiOTwoA film having a thickness of 1 μm on the layer 34;
The pad portion 4 is patterned by a photolithography process.
Formed.
【0009】なお、図2は、このようにして形成したパ
ッド部を有する赤外線センサをあらわす。図2において
図3と同じ番号を付けたものは図3の赤外線センサにお
けるものと同一のものを示す。パッド部4におけるSi
O2 表層21が除去された跡に電極32が入り込んで形
成されている。FIG. 2 shows an infrared sensor having a pad formed in this manner. In FIG. 2, the same reference numerals as in FIG. 3 denote the same components as those in the infrared sensor of FIG. Si in pad portion 4
The electrode 32 is formed so as to enter the trace where the O 2 surface layer 21 is removed.
【0010】[0010]
【発明の効果】この発明によれば、パッド部の剥離が起
きないので、パッド部の破損による不良素子の発生が抑
えられ、赤外線センサの歩留りが良くなる。電極となる
導体層の厚みを薄くしても、パッド部の剥離が起きない
ので、電極を薄くすることができ、図2にみるように、
検知部3をダイアフラム構造としたときの薄膜体部の残
留応力を軽減することもできる。According to the present invention, since the pad does not peel off, the occurrence of defective elements due to the breakage of the pad is suppressed, and the yield of the infrared sensor is improved. Even if the thickness of the conductor layer serving as an electrode is reduced, since the pad portion does not peel off, the electrode can be thinned, and as shown in FIG.
It is also possible to reduce the residual stress of the thin film body when the detecting section 3 has a diaphragm structure.
【図1】この発明にかかるパッド部の形成方法の各工程
を示す説明図。FIG. 1 is an explanatory view showing each step of a method for forming a pad section according to the present invention.
【図2】この発明の方法で形成したパッド部を有する赤
外線センサの断面図。FIG. 2 is a cross-sectional view of an infrared sensor having a pad formed by the method of the present invention.
【図3】従来の赤外線センサの断面図。FIG. 3 is a sectional view of a conventional infrared sensor.
【符号の説明】 1 基板 2 熱絶縁性の膜 3 検知部 4 パッド部 21 SiO2 層21 31 抵抗体層 32 電極 33 電極 34 SiO2 膜 35 パッド用の導体層DESCRIPTION OF SYMBOLS 1 Substrate 2 Thermally insulating film 3 Detecting part 4 Pad part 21 SiO 2 layer 21 31 Resistor layer 32 Electrode 33 Electrode 34 SiO 2 film 35 Conductor layer for pad
───────────────────────────────────────────────────── フロントページの続き (72)発明者 粟井 崇善 大阪府門真市大字門真1048番地松下電工 株式会社内 (72)発明者 柿手 啓治 大阪府門真市大字門真1048番地松下電工 株式会社内 (56)参考文献 特開 平2−206733(JP,A) 特開 平4−215022(JP,A) (58)調査した分野(Int.Cl.7,DB名) G01J 1/02 G01J 5/02 G01J 5/20 - 5/24 H01L 37/00 - 37/02 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takayoshi Awai 1048 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Works, Ltd. 56) References JP-A-2-206733 (JP, A) JP-A-4-215022 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) G01J 1/02 G01J 5/02 G01J 5/20-5/24 H01L 37/00-37/02
Claims (1)
る熱絶縁性膜上に検知部となる薄膜サーミスタと赤外線
吸収層が積層形成されてなる赤外線センサを製造するに
あたり、前記SiO2 表層上に前記サーミスタの電極と
なる導体層を形成し、その上に前記赤外線吸収層となる
SiO2 膜を形成したのちに、このSiO2 膜をエッチ
ング除去して前記導体層中のパッド部となる部分を露出
させ、この露出部分にパッド用の導体層を形成する方法
であって、前記電極となる導体層を形成する前に、Si
O2 表層中の前記パッド部下側となる部分を予めエッチ
ング除去しておき、前記電極となる導体層を前記SiO
2 表層のエッチング除去部分の内部からSiO 2 表層の
表面までにわたって形成しておくことを特徴とする赤外
線センサのパッド部の形成方法。Upon 1. A of at least some surface layer to produce an infrared sensor in which a thin film thermistor and an infrared-absorbing layer as a sensing portion on the thermally insulating layer are laminated form made of SiO 2, on the SiO 2 surface layer After forming a conductor layer serving as an electrode of the thermistor and forming an SiO 2 film serving as the infrared absorbing layer thereon, the SiO 2 film is removed by etching to remove a portion serving as a pad portion in the conductor layer. A method of exposing and forming a conductor layer for a pad on the exposed portion, the method comprising:
A portion below the pad portion in the O 2 surface layer is removed by etching in advance, and the conductor layer serving as the electrode is
From the inside of the 2 surface of etched portions SiO 2 surface layer
A method of forming a pad portion of an infrared sensor, wherein the pad portion is formed over a surface .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04342903A JP3135727B2 (en) | 1992-12-22 | 1992-12-22 | Method of forming pad portion of infrared sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04342903A JP3135727B2 (en) | 1992-12-22 | 1992-12-22 | Method of forming pad portion of infrared sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06194220A JPH06194220A (en) | 1994-07-15 |
JP3135727B2 true JP3135727B2 (en) | 2001-02-19 |
Family
ID=18357413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04342903A Expired - Fee Related JP3135727B2 (en) | 1992-12-22 | 1992-12-22 | Method of forming pad portion of infrared sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3135727B2 (en) |
-
1992
- 1992-12-22 JP JP04342903A patent/JP3135727B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06194220A (en) | 1994-07-15 |
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