JP3126155B2 - High frequency filter - Google Patents
High frequency filterInfo
- Publication number
- JP3126155B2 JP3126155B2 JP03031888A JP3188891A JP3126155B2 JP 3126155 B2 JP3126155 B2 JP 3126155B2 JP 03031888 A JP03031888 A JP 03031888A JP 3188891 A JP3188891 A JP 3188891A JP 3126155 B2 JP3126155 B2 JP 3126155B2
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- Prior art keywords
- dielectric
- dielectric layers
- resonance
- dielectric layer
- conductor
- Prior art date
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、高周波フィルタに関
し、更に詳しく言えば、移動無線など、各種の高周波回
路を有する装置に利用される高周波フィルタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency filter, and more particularly, to a high-frequency filter used for an apparatus having various high-frequency circuits such as a mobile radio.
【０００２】[0002]
【従来の技術】図８，図９は、従来例を示した図であ
り、図８は高周波フィルタ例、図９は図８の等価回路を
示す。2. Description of the Related Art FIGS. 8 and 9 show a conventional example. FIG. 8 shows an example of a high-frequency filter, and FIG. 9 shows an equivalent circuit of FIG.
【０００３】図中、１は基板（誘電体）、２，３はλ／
４型ストリップ共振器、４は結合コンデンサ、５はスル
ーホール、６はＧＮＤ電極（ベタアース）、７，８はλ
／４型誘電体共振器、ＩＮは入力端子、ＯＵＴは出力端
子、Ｃ1〜Ｃ4 はコンデンサ、Ｌ1 〜Ｌ3 はコイルを示
す。In the figure, 1 is a substrate (dielectric), 2 and 3 are λ /
4 type strip resonator, 4 is a coupling capacitor, 5 is a through hole, 6 is a GND electrode (solid earth), 7, 8 are λ
/ 4 type dielectric resonator, IN denotes an input terminal, OUT denotes an output terminal, C 1 -C 4 capacitors, L 1 ~L 3 shows a coil.
【０００４】従来、高周波フィルタには各種のものが知
られていた。この内、バンドパスフィルタの例を、図８
について説明する。図８（Ａ）はストリップラインフィ
ルタ、図８（Ｂ）は誘電体フィルタである。Conventionally, various high-frequency filters have been known. Among them, an example of the band-pass filter is shown in FIG.
Will be described. FIG. 8A shows a strip line filter, and FIG. 8B shows a dielectric filter.
【０００５】ストリップラインフィルタは、図８（Ａ）
のように、基板（誘電体）１の一面に、ある程度の距離
をあけて２つのλ／４型ストリップ共振器２，３を設
け、その間に結合コンデンサ４を接続すると共に、基板
の他面に、ＧＮＤ電極（ベタアース）６を形成したもの
である。FIG. 8A shows a strip line filter.
As shown in the figure, two .lambda. / 4 type strip resonators 2 and 3 are provided on one surface of a substrate (dielectric) 1 with a certain distance therebetween, and a coupling capacitor 4 is connected therebetween, and on the other surface of the substrate. , And a GND electrode (solid earth) 6.
【０００６】そして、上記２つのλ／４型ストリップ共
振器２，３の一端に、スルーホール５を設け、他面のＧ
ＮＤ電極６と接続する。A through hole 5 is provided at one end of each of the two λ / 4 strip resonators 2 and 3, and the G
Connect to ND electrode 6.
【０００７】また、誘電体フィルタは、図８（Ｂ）のよ
うに構成されている。すなわち、周囲にＧＮＤ電極（ベ
タアース）６を形成した２つのλ／４型誘電体共振器
７，８を並べて、その間に結合コンデンサ４を接続した
ものである。Further, the dielectric filter is configured as shown in FIG. That is, two .lambda. / 4 type dielectric resonators 7, 8 having a GND electrode (solid earth) 6 formed therearound are arranged, and a coupling capacitor 4 is connected therebetween.
【０００８】この２つのλ／４型誘電体共振器７，８
は、同軸タイプの誘電体共振器であり、内部に導体が設
けられており、誘電体の外周部にＧＮＤ電極６を形成し
てある。The two λ / 4 type dielectric resonators 7 and 8
Is a coaxial type dielectric resonator, in which a conductor is provided inside, and a GND electrode 6 is formed on the outer peripheral portion of the dielectric.
【０００９】上記のような高周波フィルタ（バンドパス
フィルタ）の等価回路は、図９（Ａ）のようになる。図
示のように、図８に示したλ／４型ストリップ共振器
２，３あるいはλ／４型誘電体共振器７，８は、等価的
には、それぞれＬ1 Ｃ1 の並列共振回路及びＬ2 Ｃ2 の
並列共振回路となる。FIG. 9A shows an equivalent circuit of the above high-frequency filter (bandpass filter). As illustrated, lambda / 4-inch strip resonator 2,3 or lambda / 4 type dielectric resonator 7 and 8 shown in FIG. 8, equivalently, the parallel resonant circuit of each L 1 C 1 and L It becomes a 2 C 2 parallel resonance circuit.
【００１０】このような高周波フィルタには、更にコイ
ルやコンデンサを付加することがあり、等価回路では、
図９（Ｂ）、図９（Ｃ）のようになる（有極型バンドパ
スフィルタ、バンドリジェクションフィルタなどを構成
する場合）。[0010] Such a high-frequency filter may be further provided with a coil or a capacitor.
FIG. 9B and FIG. 9C (when a polarized bandpass filter, a band rejection filter, and the like are configured).
【００１１】図９（Ｂ）は、結合コンデンサ４と並列に
コイルＬ3 を接続した例であり、図９（Ｃ）は、図９
（Ａ）の回路に、コンデンサＣ3 ，Ｃ4 を付加した例で
ある。[0011] FIG. 9 (B) is an example of connecting the coil L 3 in parallel with the coupling capacitor 4, FIG. 9 (C) 9
This is an example in which capacitors C 3 and C 4 are added to the circuit of FIG.
【００１２】[0012]
【発明が解決しようとする課題】上記のような従来のも
のにおいては、次のような課題があった。The above-mentioned conventional apparatus has the following problems.
【００１３】（１）図８（Ａ）に示したストリップライ
ンフィルタの場合には、信号ラインとなるλ／４型スト
リップ共振器２，３の放射損失が大きい。(1) In the case of the stripline filter shown in FIG. 8A, the radiation loss of the λ / 4-type strip resonators 2 and 3 serving as signal lines is large.
【００１４】また、λ／４型ストリップ共振器２，３間
は、相互干渉を防止するために、ある程度の距離をあけ
る必要があり、特に幅が大きくなる。Further, it is necessary to provide a certain distance between the λ / 4 strip resonators 2 and 3 in order to prevent mutual interference, and the width is particularly large.
【００１５】（２）図８（Ｂ）に示した誘電体フィルタ
の場合には、体積が大きくなり、セットに組み込む上
で、部品としての体積占有率が問題となる（特に移動無
線機器関係）。(2) In the case of the dielectric filter shown in FIG. 8B, the volume becomes large, and the volume occupation ratio as a part becomes a problem when assembled into a set (particularly for mobile radio equipment). .
【００１６】（３）図８に示した高周波フィルタは、共
振器が２段構成であるが、実際には、更に、多段構成す
ることが多く、必然的に大型のフィルタとなる。このた
め、機器の小型化が困難となる。(3) The high-frequency filter shown in FIG. 8 has a two-stage resonator. However, in practice, the resonator often has a multi-stage configuration, so that the filter is necessarily large. For this reason, it is difficult to reduce the size of the device.
【００１７】（４）図８に示した高周波フィルタに、更
に図９（Ｂ）、図９（Ｃ）に示したように、コイルやコ
ンデンサを付加した場合には、高周波フィルタブロック
として大型化する。(4) When a coil or a capacitor is added to the high frequency filter shown in FIG. 8 as shown in FIGS. 9B and 9C, the size of the high frequency filter block increases. .
【００１８】本発明は、このような従来の課題を解消
し、高周波フィルタの性能を低下することなく、小型化
及び軽量化ができるようにすることを目的とする。An object of the present invention is to solve such a conventional problem and reduce the size and weight of the high-frequency filter without deteriorating its performance.
【００１９】[0019]
【課題を解決するための手段】図１は、本発明の原理図
であり、図中、１０−１，１０−２は誘電体層、１１は
積層面、１２は第１の共振導体、１３は第２の共振導
体、１４，１５，１６はＧＮＤ電極を示す。FIG. 1 is a diagram showing the principle of the present invention. In FIG. 1, reference numerals 10-1 and 10-2 denote dielectric layers, 11 denotes a laminated surface, 12 denotes a first resonance conductor, and 13 denotes a first resonance conductor. Denotes a second resonance conductor, and 14, 15, and 16 denote GND electrodes.
【００２０】また、２０−１〜２０−４は誘電体層、２
１〜２３は積層面、２４は第１の共振導体、２５は第２
の共振導体、２６，２８，２９，３０はＧＮＤ電極を示
す。Reference numerals 20-1 to 20-4 denote dielectric layers, 2
1 to 23 are laminated surfaces, 24 is a first resonance conductor, and 25 is a second resonance conductor.
Reference numerals 26, 28, 29 and 30 denote GND electrodes.
【００２１】本発明は、上記の目的を達成するため、次
のように構成したものである。The present invention is configured as follows to achieve the above object.
【００２２】(1) ：第１、第２の誘電体層１０−１，１
０−２を含む複数の誘電体層を積層して積層体を構成
し、前記第１、第２の誘電体層１０−１，１０−２の積
層面１１に、所定の間隔をおいて第１、第２の共振導体
１２，１３を設けると共に、前記積層面において、各共
振導体を周囲から取り囲むように、該共振導体の周囲
に、所定間隔をおいてＧＮＤ電極１５を設け、前記第
１、第２の共振導体１２，１３の一端を前記ＧＮＤ電極
１５に接続し、前記いずれか一方の共振導体の他端には
第１のコンデンサ電極を接続し、前記第１、第２の誘電
体層１０−１，１０−２の外側に位置する面には、それ
ぞれＧＮＤ電極１４，１６を設けると共に、該第１、第
２の誘電体層の外側に位置する面の一方には、前記各共
振導体に対向して端子を設け、他方には前記第１のコン
デンサ電極に対向して第２のコンデンサ電極を設けて高
周波フィルタとした。(1): First and second dielectric layers 10-1, 1
A plurality of dielectric layers including the first and second dielectric layers 10-1 and 10-2 are laminated at a predetermined interval on the laminated surface 11 of the first and second dielectric layers 10-1 and 10-2. First and second resonance conductors 12 and 13 are provided, and a GND electrode 15 is provided at predetermined intervals around the resonance conductor on the laminated surface so as to surround each resonance conductor from the periphery .
1. One end of each of the second resonance conductors 12 and 13 is connected to the GND electrode.
15 and the other end of one of the resonance conductors
The first capacitor electrodes are connected, and GND electrodes 14 and 16 are provided on the surfaces located outside the first and second dielectric layers 10-1 and 10-2, respectively .
One of the surfaces located outside the dielectric layer 2
A terminal is provided facing the vibration conductor, and the other terminal is provided on the other side.
A second capacitor electrode was provided opposite to the capacitor electrode to provide a high frequency filter.
【００２３】(2) ：第１〜第４の誘電体層２０−１〜２
０−４を含む複数の誘電体層を積層して積層体を構成
し、第１の誘電体層２０−１の外側に位置する面には、
ＧＮＤ電極（２６）を設け、第１、第２の誘電体層２０
−１，２０−２の積層面２１には、第１の共振導体２４
を設けると共に、前記積層面２１において、前記共振導
体２４を周囲から取り囲むように、該共振導体２４の周
囲に、所定間隔をおいてＧＮＤ電極２７を設け、該共振
導体２４の一端を該ＧＮＤ電極２７に接続し、第２、第
３の誘電体層２０−２，２０−３の積層面２２には、導
体の無い部分３６を設け、この導体の無い部分３６を除
いた他の部分にＧＮＤ電極２８を設け、第３、第４の誘
電体層２０−３，２０−４の積層面２３には、第２の共
振導体２５を設けると共に、前記積層面２３において、
前記共振導体２５を周囲から取り囲むように、該共振導
体２５の周囲に、所定間隔をおいて、ＧＮＤ電極２９を
設け、該共振導体２５の一端をＧＮＤ電極２９に接続
し、第４の誘電体層２０−４の外側に位置する面には、
ＧＮＤ電極３０を設け、前記各共振電極に対向して、前
記第１〜第４の誘電体層の外側に位置する面の一方向に
端子を設けて高周波フィルタとした。(2): first to fourth dielectric layers 20-1 and 20-2
A plurality of dielectric layers including 0-4 are laminated to form a laminate, and a surface located outside the first dielectric layer 20-1 includes:
A GND electrode (26) is provided, and the first and second dielectric layers 20 are provided.
-1 and 20-2, the first resonance conductor 24
And a GND electrode 27 is provided on the laminated surface 21 around the resonance conductor 24 at a predetermined interval so as to surround the resonance conductor 24 from the periphery.
One end of the conductor 24 is connected to the GND electrode 27, and a conductive surface is provided on the laminated surface 22 of the second and third dielectric layers 20-2 and 20-3.
A bodyless portion 36 is provided, and the conductorless portion 36 is removed.
A GND electrode 28 is provided on the other portion, and a second resonance conductor 25 is provided on the laminated surface 23 of the third and fourth dielectric layers 20-3 and 20-4.
A GND electrode 29 is provided at predetermined intervals around the resonance conductor 25 so as to surround the resonance conductor 25 from the periphery, and one end of the resonance conductor 25 is connected to the GND electrode 29.
The surface located outside the fourth dielectric layer 20-4 includes
A GND electrode 30 is provided.
In one direction of a surface located outside the first to fourth dielectric layers,
Terminals were provided to provide a high frequency filter.
【００２４】（３）上記構成（１）において、第１、第
２の誘電体層１０−１，１０−２を、高誘電率（ε1 ）
の誘電体層とし、この第１、第２の誘電体層と、上記外
側のＧＮＤ電極１４，１６との間にそれぞれ、前記第
１，第２の誘電体層１０−１，１０−２よりも低誘電率
（ε2 ，ε2 ＜ε1 ）の誘電体層を設けた。(3) In the above configuration (1), the first and second dielectric layers 10-1 and 10-2 are made to have a high dielectric constant (ε 1 ).
Between the first and second dielectric layers and the outer GND electrodes 14 and 16, respectively, from the first and second dielectric layers 10-1 and 10-2. Also, a dielectric layer having a low dielectric constant (ε 2 , ε 2 <ε 1 ) was provided.
【００２５】（４）上記構成（２）において、第１〜第
４の誘電体層２０−１〜２０−４を、高誘電率（ε1 ）
の誘電体層とし、この第１〜第４の誘電体層と、上記外
側及び中央部のＧＮＤ電極（２６，２８，３０）との間
に、前記第１〜第４の誘電体層（２０−１〜２０−４）
よりも低誘電率（ε2 ，ε1 ＞ε2 ）の誘電体層を設け
た。(4) In the above configuration (2), the first to fourth dielectric layers 20-1 to 20-4 are made to have a high dielectric constant (ε 1 ).
The first to fourth dielectric layers (20) are disposed between the first to fourth dielectric layers and the outer and central GND electrodes (26, 28, 30). -1 to 20-4)
A dielectric layer having a lower dielectric constant (ε 2 , ε 1 > ε 2 ) was provided.
【００２６】[0026]
【作用】上記構成に基づく本発明の作用を、図１を参照
しながら説明する。The operation of the present invention based on the above configuration will be described with reference to FIG.
【００２７】共振導体１２，１３、あるいは２４，２５
は、それぞれ、例えばλ／４型共振器を構成しており、
特定の信号周波数に対して共振状態となる。The resonance conductors 12, 13 or 24, 25
Respectively constitute, for example, a λ / 4 type resonator,
Resonance occurs for a specific signal frequency.
【００２８】この共振導体は、上下方向（積層方向）と
左右方向（幅方向）にＧＮＤ電極が設けてあり、これら
のＧＮＤ電極で周囲を囲むような構造となっている。This resonance conductor has a structure in which GND electrodes are provided in the vertical direction (lamination direction) and the horizontal direction (width direction), and the periphery is surrounded by these GND electrodes.
【００２９】従って、共振導体に信号が伝播した際に電
界が発生するが、この電界は、上記ＧＮＤ電極によっ
て、外部へ漏れるのを防止する。Therefore, an electric field is generated when a signal propagates through the resonance conductor, and this electric field is prevented from leaking outside by the GND electrode.
【００３０】このため、高周波フィルタを小型化した場
合でも、電界の漏れを防ぎ、信号線路の放射損失を少な
くできる。Therefore, even when the size of the high-frequency filter is reduced, leakage of the electric field can be prevented and radiation loss of the signal line can be reduced.
【００３１】更に、共振導体１２，１３、あるいは２
４，２５を高誘電率材料の誘電体層で挟み、更にこの誘
電体層の外側に、低誘電率材料の誘電体層を設けること
により、電界の漏れを一段と少なくし、より一層放射損
失を少なくできる。Further, the resonance conductors 12, 13 or 2
By interposing the dielectric layers 4 and 25 between dielectric layers of a high dielectric constant material and further providing a dielectric layer of a low dielectric constant material outside the dielectric layer, electric field leakage is further reduced, and radiation loss is further reduced. Can be reduced.
【００３２】このため、高周波フィルタを小型化した場
合でも、放射損失を極めて少なくできる。Therefore, even if the high-frequency filter is downsized, the radiation loss can be extremely reduced.
【００３３】[0033]
【実施例】以下、本発明の実施例を図面に基づいて説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００３４】（第１実施例の説明）図２〜図３は、本発
明の第１実施例を示した図であり、図２は、高周波フィ
ルタの分解斜視図、図３は、図２のＸ−Ｙ線断面図であ
る。(Explanation of First Embodiment) FIGS. 2 and 3 are views showing a first embodiment of the present invention, FIG. 2 is an exploded perspective view of a high-frequency filter, and FIG. It is XY sectional drawing.
【００３５】図中、図１と同符号は同一のものを示す。
また、３１，３２はコンデンサ電極、３３はブラインド
スルーホール（内部を導体で満たしたスルーホール）を
示す。In the figure, the same reference numerals as those in FIG. 1 denote the same parts.
Reference numerals 31 and 32 denote capacitor electrodes, and reference numeral 33 denotes a blind through hole (a through hole whose inside is filled with a conductor).
【００３６】この実施例は、高周波フィルタを構成する
積層体を、３層構造とし、共振導体を同一積層面に形成
した例である。図２及び図３に示したように、第１の誘
電体層１０−１、第２の誘電体層１０−２、第３の誘電
体層１０−３を積層して積層体とする。This embodiment is an example in which the laminated body constituting the high-frequency filter has a three-layer structure, and the resonance conductor is formed on the same laminated surface. As shown in FIGS. 2 and 3, the first dielectric layer 10-1, the second dielectric layer 10-2, and the third dielectric layer 10-3 are laminated to form a laminate.
【００３７】この場合、上記第１の誘電体層１０−１上
には、ＧＮＤ電極１４を厚膜印刷パターンとしてほぼ全
面に形成する。そして、一部には、ＧＮＤ電極１４を形
成しない部分を残しておき、この部分に、入力端子ＩＮ
と出力端子ＯＵＴを厚膜印刷パターンとして形成する。In this case, the GND electrode 14 is formed on almost the entire surface of the first dielectric layer 10-1 as a thick film print pattern. A portion where the GND electrode 14 is not formed is left in a part, and the input terminal IN
And the output terminal OUT are formed as a thick film print pattern.
【００３８】第２の誘電体層１０−２上には、第１の共
振導体１２と、第２の共振導体１３を、所定の間隔をお
いて厚膜印刷パターンとして形成すると共に、各共振導
体１２，１３の周囲には、ＧＮＤ電極１５を厚膜印刷パ
ターンとして形成する。On the second dielectric layer 10-2, a first resonance conductor 12 and a second resonance conductor 13 are formed as a thick print pattern at a predetermined interval. The GND electrode 15 is formed as a thick film printing pattern on the periphery of 12 and 13.
【００３９】この共振導体１２，１３は、一端でＧＮＤ
電極１５に接続するが、他の部分では、ＧＮＤ電極１５
と所定の間隔をおいて形成する。また、ＧＮＤ電極１５
が設けてない部分に、コンデンサ電極３１を厚膜印刷パ
ターンとして形成し、これを第１の共振導体１２の先端
部分（ＧＮＤ電極１５に接続した部分の反対側）に接続
する。The resonance conductors 12 and 13 are connected at one end to GND.
Connected to the electrode 15, but in other parts, the GND electrode 15
Are formed at predetermined intervals. Also, the GND electrode 15
The capacitor electrode 31 is formed as a thick-film print pattern on a portion where is not provided, and this is connected to the tip portion of the first resonance conductor 12 (the side opposite to the portion connected to the GND electrode 15).
【００４０】第３の誘電体層１０−３上には、ほぼ全面
にＧＮＤ電極１６を厚膜印刷パターンとして形成する。
またこの第２の誘電体層１０−３の一部にＧＮＤ電極１
６を形成しない部分を設けておき、この部分にコンデン
サ電極３２を厚膜印刷パターンとして形成する。On the third dielectric layer 10-3, the GND electrode 16 is formed as a thick film print pattern on almost the entire surface.
Further, a GND electrode 1 is provided on a part of the second dielectric layer 10-3.
A portion where no 6 is formed is provided, and the capacitor electrode 32 is formed in this portion as a thick film printing pattern.
【００４１】上記のように、厚膜印刷パターンを形成し
た各誘電層を積層するが、図２に点線で示した部分を、
ブラインドスルーホール３３によって接続する。As described above, the respective dielectric layers on which the thick-film print patterns are formed are laminated, and the portions indicated by the dotted lines in FIG.
They are connected by blind through holes 33.
【００４２】このようにすれば、コンデンサ電極３１，
３２間には、コンテンサＣが形成されると共に、入力端
子ＩＮ、及び出力端子ＯＵＴには、それぞれ共振導体１
２，１３が接続され、その等価回路は図９（Ａ）のよう
になる（バンドパスフィルタ）。By doing so, the capacitor electrodes 31,
32, a capacitor C is formed, and the input terminal IN and the output terminal OUT are connected to the resonance conductor 1 respectively.
2 and 13 are connected, and the equivalent circuit is as shown in FIG. 9A (bandpass filter).
【００４３】なお、この実施例では、共振導体１２，１
３は、λ／４型共振器を構成している。また、各ＧＮＤ
電極１４〜１６間は、それぞれブラインドスルーホール
３３によって接続する。In this embodiment, the resonance conductors 12, 1
Reference numeral 3 denotes a λ / 4 resonator. In addition, each GND
The electrodes 14 to 16 are connected by blind through holes 33, respectively.
【００４４】（第２実施例の説明）図４は第２実施例に
おける高周波フィルタの分解斜視図、図５は図４のＸ−
Ｙ線断面図である。(Explanation of the Second Embodiment) FIG. 4 is an exploded perspective view of a high-frequency filter according to the second embodiment, and FIG.
FIG. 3 is a sectional view taken along line Y.
【００４５】図中、図１と同符号は同一のものを示す。
また、３４，３５はコンデンサ電極、３６は導体の無い
部分、ＩＮは入力端子、ＯＵＴは出力端子を示す。In the figure, the same reference numerals as those in FIG. 1 denote the same parts.
34 and 35 are capacitor electrodes, 36 is a portion without a conductor, IN is an input terminal, and OUT is an output terminal.
【００４６】この実施例は、高周波フィルタを、４層の
誘電体層から成る積層体で構成し、共振導体を積層方向
に配列したものである。図４，５のように、第１〜第４
の誘電体層２０−１〜２０−４を積層して積層体を構成
する。In this embodiment, the high-frequency filter is constituted by a laminated body composed of four dielectric layers, and the resonance conductors are arranged in the laminating direction. As shown in FIGS.
Are laminated to form a laminated body.
【００４７】この場合、第１の誘電体層２０−１上に
は、ほぼ全面にＧＮＤ電極２６を形成する。このＧＮＤ
電極２６は、厚膜印刷パターンとして形成する。また、
第１の誘電体層２０−１上には、一部にＧＮＤ電極２６
を形成しない部分を残しておき、この部分に、例えば入
力端子ＩＮを厚膜パターンとして形成する。In this case, the GND electrode 26 is formed on almost the entire surface of the first dielectric layer 20-1. This GND
The electrode 26 is formed as a thick film printing pattern. Also,
On the first dielectric layer 20-1, a part of the GND electrode 26 is provided.
Is formed, and the input terminal IN is formed in this portion as a thick film pattern, for example.
【００４８】第２の誘電体層２０−２上には、ほぼ中央
部に、λ／４型共振器を構成する共振導体２４を形成
し、この共振導体２４の周囲を囲むように、該共振導体
２４と所定の間隔をおいてＧＮＤ電極パターン２７を厚
膜印刷パターンとして形成する。On the second dielectric layer 20-2, a resonance conductor 24 forming a λ / 4 resonator is formed substantially at the center, and the resonance conductor 24 is formed so as to surround the resonance conductor 24. The GND electrode pattern 27 is formed as a thick film printing pattern at a predetermined interval from the conductor 24.
【００４９】また、共振導体２４の一端は、ＧＮＤ電極
２７に接続すると共に、他端には、厚膜印刷パターンと
して形成したコンデンサ電極３４を接続する。One end of the resonance conductor 24 is connected to the GND electrode 27, and the other end is connected to a capacitor electrode 34 formed as a thick film printing pattern.
【００５０】第３の誘電体層２０−３上には、ほぼ全面
にＧＮＤ電極２８を厚膜印刷パターンとして形成すると
共に、その一部には、導体の無い部分３６を設ける。こ
部分はコンデンサを形成する部分となる。On the entire surface of the third dielectric layer 20-3, the GND electrode 28 is formed as a thick film printing pattern, and a portion 36 without a conductor is provided on a part thereof. This portion is a portion forming a capacitor.
【００５１】第４の誘電体層２０−４上には、第２の誘
電体層２０−２上と同様にして、λ／４型共振導体を構
成する共振導体２５、ＧＮＤ電極２９、及びコンデンサ
電極３５をそれぞれ厚膜印刷パターンとして形成する。On the fourth dielectric layer 20-4, in the same manner as on the second dielectric layer 20-2, the resonance conductor 25, the GND electrode 29, and the capacitor constituting the λ / 4 type resonance conductor are formed. Each of the electrodes 35 is formed as a thick film printing pattern.
【００５２】また、第４の誘電体層２０−４の裏面（共
振導体を設けた面の反対側）には、第１の誘電体層２０
−１上と同様にほぼ全面にＧＮＤ電極３０を厚膜印刷パ
ターンとして形成すると共に、その一部には、ＧＮＤ電
極３０を形成しない部分を残しておき、この部分に出力
端子ＯＵＴを厚膜印刷パターンとして形成する。On the back surface of the fourth dielectric layer 20-4 (on the side opposite to the surface on which the resonance conductor is provided), the first dielectric layer 20-4 is provided.
In the same manner as above, the GND electrode 30 is formed as a thick-film printing pattern on almost the entire surface, and a portion where the GND electrode 30 is not formed is left in a part of the GND electrode 30, and the output terminal OUT is thick-film printed on this portion. Form as a pattern.
【００５３】上記のような厚膜印刷パターンを形成した
各誘電体層を積層して積層体とするが、この場合、ブラ
インドスルーホールにより、所定の部分を接続すること
により、高周波フィルタを得る。Each dielectric layer having the above-described thick film print pattern is laminated to form a laminate. In this case, a predetermined portion is connected by a blind through hole to obtain a high frequency filter.
【００５４】この高周波フィルタの等価回路は、図９
（Ａ）のようになる（バンドパスフィルタ）が、結合コ
ンデンサは、コンデンサ電極３４、３５間に形成され
る。尚、ＧＮＤ電極２６〜２９は、スルーホール３３に
より、それぞれ接続されている。FIG. 9 shows an equivalent circuit of this high-frequency filter.
(A) (bandpass filter), but a coupling capacitor is formed between the capacitor electrodes 34 and 35. The GND electrodes 26 to 29 are connected by through holes 33, respectively.
【００５５】（第３実施例の説明）図６は、第３実施例
における高周波フィルタの断面図である。図中、図１〜
図３と同符号は同一のものを示す。また１０−４，１０
−５は誘電体層を示す。(Explanation of Third Embodiment) FIG. 6 is a sectional view of a high-frequency filter according to a third embodiment. In the figures, FIGS.
The same reference numerals as those in FIG. 3 denote the same components. 10-4, 10
-5 indicates a dielectric layer.
【００５６】この実施例は、上記第１実施例の高周波フ
ィルタを、更に改良して小型化を図った例であり、その
断面を図６に示す。This embodiment is an example in which the high-frequency filter of the first embodiment is further improved to reduce the size, and a cross section is shown in FIG.
【００５７】すなわち、図２、図３に示した第１の誘電
体層１０−１、第２の誘電体層１０−２を高誘電率材料
（誘電率ε1 ）で構成すると共に、これらの誘電体層
と、外側のＧＮＤ電極１４，１６との間に、それぞれ、
前記誘電体層よりも低誘電率（ε2 ，ε1 ，＞ε2 ）の
誘電体層１０−４，１０−５を設けて、図６のように構
成したものである。That is, the first dielectric layer 10-1 and the second dielectric layer 10-2 shown in FIGS. 2 and 3 are made of a material having a high dielectric constant (dielectric constant ε 1 ). Between the dielectric layer and the outer GND electrodes 14 and 16, respectively,
It is configured as shown in FIG. 6 by providing dielectric layers 10-4 and 10-5 having a dielectric constant (ε 2 , ε 1 ,> ε 2 ) lower than that of the dielectric layer.
【００５８】この場合、ε1 ＞ε2 の関係となるように
誘電体層の材料を選定する。このようにすれば、共振導
体１２，１３は、高誘電率材料の誘電体層で挾んだ構造
となり、更にその外側には、低誘電率材料の誘電体層が
存在する構造となる。In this case, the material of the dielectric layer is selected so that ε 1 > ε 2 . In this way, the resonance conductors 12 and 13 have a structure sandwiched between dielectric layers of a high dielectric constant material, and further have a structure in which a dielectric layer of a low dielectric constant material exists outside the structure.
【００５９】このため、共振導体１２，１３で発生した
電界は、高誘電率材料の誘電体層内に閉じ込め、外部に
は漏れにくくなるため、上記第１実施例の高周波フィル
タよりも、更に、小型化が可能となる。For this reason, the electric field generated by the resonance conductors 12 and 13 is confined in the dielectric layer of the high dielectric constant material and hardly leaks to the outside. The size can be reduced.
【００６０】（第４実施例の説明）図７は、第４実施例
における高周波フィルタの断面図であり、図中、図４、
図５と同符号は同一のものを示す。また、２０−５〜２
０−８は、誘電体層を示す。(Explanation of the Fourth Embodiment) FIG. 7 is a sectional view of a high-frequency filter according to the fourth embodiment.
The same reference numerals as those in FIG. 5 indicate the same components. Also, 20-5 to 2
0-8 indicates a dielectric layer.
【００６１】この実施例は、図４、図５に示した第２実
施例の高周波フィルタを、更に小型化できるようにした
ものである。In this embodiment, the high-frequency filter of the second embodiment shown in FIGS. 4 and 5 can be further miniaturized.
【００６２】すなわち、図４、図５に示した第１〜第４
の誘電体層２０−１〜２０−４を全て高誘電率材料（誘
電率ε1 ）で構成すると共に、これらの高誘電率材料か
ら成る各誘電体層と、ＧＮＤ電極２６，２８，３０との
間に、低誘電率材料（誘電率ε2 ）から成る誘電体層２
０−５〜２０−８を設けたものである。That is, the first to fourth data shown in FIGS.
Of the dielectric layers 20-1 to 20-4 are made of a high dielectric constant material (dielectric constant ε 1 ), and the dielectric layers made of these high dielectric constant materials, the GND electrodes 26, 28, 30 A dielectric layer 2 made of a low dielectric constant material (dielectric constant ε 2 )
0-5 to 20-8 are provided.
【００６３】この場合、ε1 ＞ε2 の関係となるように
各層の材料を選定する。このようにすれば、２つの共振
導体２４，２５は、それぞれ高誘電率材料の誘電体層２
０−１〜２０−４で挾んだ構造となり、更にその外側に
は低誘電材料の誘電体層が存在する構造となる。In this case, the material of each layer is selected so that ε 1 > ε 2 . In this way, the two resonance conductors 24 and 25 are respectively formed on the dielectric layer 2 of a high dielectric constant material.
The structure is sandwiched between 0-1 to 20-4, and further a dielectric layer of a low dielectric material exists outside the structure.
【００６４】従って、この例でも、共振導体２４，２５
で発生した電界を高誘電率材料の誘電体層内に閉じ込め
ることができ、第２実施例のものより更に小型化をする
ことが可能となる。Therefore, also in this example, the resonance conductors 24 and 25
Can be confined in the dielectric layer of the high dielectric constant material, and the size can be further reduced as compared with the second embodiment.
【００６５】（他の実施例の説明）以上実施例について
説明したが、本発明は次のようにしても実施可能であ
る。(Explanation of Other Embodiments) Although the embodiments have been described above, the present invention can be implemented as follows.
【００６６】（１）上記実施例のようなバンドパスフィ
ルタだけでなく、共振器に付加する素子を変えることに
より、ローパスフィルタ、ハイパスフィルタ、バンドリ
ジェクトフィルタ、など、各種の高周波フィルタに使用
可能である。(1) It is possible to use not only the band-pass filter as in the above embodiment but also various high-frequency filters such as a low-pass filter, a high-pass filter, a band-reject filter, and the like by changing an element added to the resonator. is there.
【００６７】（２）積層体の層数を更に増やすことによ
り多段構成の高周波フィルタとすることも可能である。(2) By further increasing the number of layers in the laminate, a multi-stage high-frequency filter can be obtained.
【００６８】[0068]
【発明の効果】以上説明したように、本発明によれば次
のような効果がある。As described above, the present invention has the following effects.
【００６９】（１）共振導体の周囲をＧＮＤ電極で挾む
ように構成したため、放射損失を少なくできる。(1) Since the periphery of the resonance conductor is sandwiched between the GND electrodes, radiation loss can be reduced.
【００７０】（２）高周波フィルタを小体積化、小型化
した場合でも、放射損失を少なくできる。従って、高周
波フィルタを使用した機器の小型化、軽量化が達成でき
る。(2) Even when the high frequency filter is reduced in volume and size, radiation loss can be reduced. Therefore, miniaturization and weight reduction of the device using the high frequency filter can be achieved.
【００７１】（３）高周波フィルタを多層構造としたの
で、他の素子、例えばコンデンサ等を付加する場合で
も、同時に厚膜印刷で構成し、内蔵することが可能であ
る。従って、製造も容易で、かつ高周波フィルタが小型
化できる。(3) Since the high frequency filter has a multilayer structure, even when other elements, for example, a capacitor or the like are added, the high frequency filter can be simultaneously formed by thick film printing and built in. Therefore, the manufacture is easy and the high-frequency filter can be downsized.
【００７２】（４）共振導体を、高誘電率材料の誘電体
層で挾み、更にその外側に低誘電率材料の誘電体層を設
ければ、更に高周波フィルタの小型化、軽量化が可能で
ある。(4) If the resonance conductor is sandwiched between dielectric layers of a high dielectric constant material and a dielectric layer of a low dielectric constant material is further provided outside thereof, the size and weight of the high frequency filter can be further reduced. It is.
【図１】本発明の原理図である。FIG. 1 is a principle diagram of the present invention.
【図２】本発明の第１実施例における高周波フィルタの
分解斜視図である。FIG. 2 is an exploded perspective view of the high-frequency filter according to the first embodiment of the present invention.
【図３】図２のＸ−Ｙ線断面図である。FIG. 3 is a sectional view taken along line XY of FIG. 2;
【図４】第２実施例における高周波フィルタの分解斜視
図である。FIG. 4 is an exploded perspective view of a high-frequency filter according to a second embodiment.
【図５】図４のＸ−Ｙ線断面図である。FIG. 5 is a sectional view taken along line XY of FIG. 4;
【図６】第３実施例における高周波フィルタの断面図で
ある。FIG. 6 is a sectional view of a high-frequency filter according to a third embodiment.
【図７】第４実施例における高周波フィルタの断面図で
ある。FIG. 7 is a sectional view of a high-frequency filter according to a fourth embodiment.
【図８】従来の高周波フィルタ例である。FIG. 8 is an example of a conventional high-frequency filter.
【図９】高周波フィルタの等価回路である。FIG. 9 is an equivalent circuit of a high-frequency filter.
１２，１３ 共振導体 １４，１５，１６ ＧＮＤ電極 １０−１，１０−２ 誘電体層 １１ 積層面 ２０−１〜２０−４ 誘電体層 ２４，２５ 共振導体 ２６〜３０ ＧＮＤ電極 12, 13 Resonant conductor 14, 15, 16 GND electrode 10-1, 10-2 Dielectric layer 11 Stacking surface 20-1 to 20-4 Dielectric layer 24, 25 Resonant conductor 26 to 30 GND electrode
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平１−297901（ＪＰ，Ａ) 特開 昭62−30402（ＪＰ，Ａ) 特開 昭62−86904（ＪＰ，Ａ) 特開 昭47−25684（ＪＰ，Ａ) 特開 昭63−128801（ＪＰ，Ａ) 実開 平２−106701（ＪＰ，Ｕ) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-1-297901 (JP, A) JP-A-62-30402 (JP, A) JP-A-62-86904 (JP, A) JP-A-47-47 25684 (JP, A) JP-A-63-128801 (JP, A) JP-A-2-106701 (JP, U)
Claims (4)
２）を含む複数の誘電体層を積層して積層体を構成し、 前記第１、第２の誘電体層（１０−１，１０−２）の積
層面（１１）に、所定の間隔をおいて第１、第２の共振
導体（１２，１３）を設けると共に、 前記積層面において、各共振導体を周囲から取り囲むよ
うに、該共振導体の周囲に、所定間隔をおいてＧＮＤ電
極（１５）を設け、前記第１、第２の共振導体（１２，１３）の一端を前記
ＧＮＤ電極（１５）に接続し、前記いずれか一方の共振
導体の他端には第１のコンデンサ電極を接続し、 前記第１、第２の誘電体層（１０−１，１０−２）の外
側に位置する面には、それぞれＧＮＤ電極（１４，１
６）を設けると共に、該第１、第２の誘電体層の外側に
位置する面の一方には、前記各共振導体に対向して端子
を設け、他方には前記第１のコンデンサ電極に対向して
第２のコンデンサ電極を設けたことを特徴とする高周波
フィルタ。A first dielectric layer (10-1, 10-).
A plurality of dielectric layers including (2) are laminated to form a laminate, and a predetermined interval is formed on the laminated surface (11) of the first and second dielectric layers (10-1, 10-2). In addition, first and second resonance conductors (12, 13) are provided, and a GND electrode (15) is provided around the resonance conductor at a predetermined interval on the lamination surface so as to surround each resonance conductor from the periphery. ), And one ends of the first and second resonance conductors (12, 13) are
Connected to the GND electrode (15) to resonate either one
A first capacitor electrode is connected to the other end of the conductor, and GND electrodes (14, 1) are provided on the surfaces located outside the first and second dielectric layers (10-1, 10-2), respectively.
6), and outside the first and second dielectric layers.
On one of the located surfaces, a terminal is provided facing each of the resonance conductors.
And the other is opposed to the first capacitor electrode.
A high-frequency filter provided with a second capacitor electrode .
４）を含む複数の誘電体層を積層して積層体を構成し、 第１の誘電体層（２０−１）の外側に位置する面には、
ＧＮＤ電極（２６）を設け、 第１、第２の誘電体層（２０−１，２０−２）の積層面
（２１）には、第１の共振導体（２４）を設けると共
に、前記積層面（２１）において、前記共振導体（２
４）を周囲から取り囲むように、該共振導体（２４）の
周囲に、所定間隔をおいてＧＮＤ電極（２７）を設け、
該共振導体（２４）の一端を該ＧＮＤ電極（２７）に接
続し、 第２、第３の誘電体層（２０−２，２０−３）の積層面
（２２）には、導体の無い部分（３６）を設け、この導
体の無い部分（３６）を除いた他の部分にＧＮＤ電極
（２８）を設け、 第３、第４の誘電体層（２０−３，２０−４）の積層面
（２３）には、第２の共振導体（２５）を設けると共
に、前記積層面（２３）において、前記共振導体（２
５）を周囲から取り囲むように、該共振導体（２５）の
周囲に、所定間隔をおいて、ＧＮＤ電極（２９）を設
け、該共振導体（２５）の一端をＧＮＤ電極（２９）に
接続し、 第４の誘電体層（２０−４）の外側に位置する面には、
ＧＮＤ電極（３０）を設け、 前記各共振電極に対向して、前記第１〜第４の誘電体層
の外側に位置する面の一方向に端子を設け たことを特徴
とする高周波フィルタ。2. The first to fourth dielectric layers (20-1 to 20-).
A plurality of dielectric layers including 4) are laminated to form a laminate, and a surface located outside the first dielectric layer (20-1) includes:
A GND electrode (26) is provided, a first resonance conductor (24) is provided on a laminated surface (21) of the first and second dielectric layers (20-1, 20-2), and the laminated surface is provided. In (21), the resonance conductor (2)
A GND electrode (27) is provided around the resonance conductor (24) at a predetermined interval so as to surround 4) from the periphery ,
One end of the resonance conductor (24) is connected to the GND electrode (27).
Subsequently, a portion (36) without a conductor is provided on the laminated surface (22) of the second and third dielectric layers (20-2, 20-3),
A GND electrode (28) is provided on the other part except the bodyless part (36), and a third surface (23) of the third and fourth dielectric layers (20-3, 20-4) has And two resonance conductors (25) are provided on the laminated surface (23).
A GND electrode (29) is provided around the resonance conductor (25) at a predetermined interval so as to surround 5) from the periphery, and one end of the resonance conductor (25) is connected to the GND electrode (29).
Connected to a surface located outside the fourth dielectric layer (20-4),
The GND electrode (30) provided to face the respective resonance electrodes, the first to fourth dielectric layers
A terminal is provided in one direction of a surface located outside the filter.
０−２）を、高誘電率（ε1 ）の誘電体層とし、 この第１、第２の誘電体層と、前記外側のＧＮＤ電極
（１４，１６）との間に、それぞれ、 前記第１、第２の誘電体層（１０−１，１０−２）より
も低誘電率（ε2 ，ε2 ＜ε1 ）の誘電体層（１０−
４，１０−５）を設けたことを特徴とする請求項１記載
の高周波フィルタ。3. The first and second dielectric layers (10-1, 1, 1).
0-2) as a dielectric layer having a high dielectric constant (ε 1 ), between the first and second dielectric layers and the outer GND electrodes (14, 16). 1. The dielectric layer (10-) having a lower dielectric constant (ε 2 , ε 2 <ε 1 ) than the second dielectric layer (10-1, 10-2).
The high-frequency filter according to claim 1, wherein (4, 10-5) is provided.
０−４）を、高誘電率（ε1 ）の誘電体層とし、 この第１〜第４の誘電体層と、前記外側及び中央部のＧ
ＮＤ電極（２６，２８，３０）との間に、それぞれ、 前記第１〜第４の誘電体層（２０−１〜２０−４）より
も低誘電率（ε2 ，ε1 ＞ε2 ）の誘電体層（２０−５
〜２０−８）を設けたことを特徴とする請求項２記載の
高周波フィルタ。4. The first to fourth dielectric layers (20-1 to 20-2).
0-4) as a dielectric layer having a high dielectric constant (ε 1 ), the first to fourth dielectric layers, and the G layers at the outer and central portions.
A dielectric constant (ε 2 , ε 1 > ε 2 ) lower than that of the first to fourth dielectric layers (20-1 to 20-4) between the ND electrodes (26, 28, 30), respectively. Dielectric layer (20-5)
3. The high-frequency filter according to claim 2, further comprising: (1) to (20-8).
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03031888A JP3126155B2 (en) | 1991-01-31 | 1991-01-31 | High frequency filter |
| EP92901922A EP0519085B1 (en) | 1990-12-26 | 1991-12-25 | High-frequency device |
| DE69122748T DE69122748T2 (en) | 1990-12-26 | 1991-12-25 | HIGH FREQUENCY DEVICE |
| PCT/JP1991/001761 WO1992012548A1 (en) | 1990-12-26 | 1991-12-25 | High-frequency device |
| US08/225,341 US5406235A (en) | 1990-12-26 | 1991-12-25 | High frequency device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03031888A JP3126155B2 (en) | 1991-01-31 | 1991-01-31 | High frequency filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04246901A JPH04246901A (en) | 1992-09-02 |
| JP3126155B2 true JP3126155B2 (en) | 2001-01-22 |
Family
ID=12343574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03031888A Expired - Fee Related JP3126155B2 (en) | 1990-12-26 | 1991-01-31 | High frequency filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3126155B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102501852B1 (en) * | 2019-08-22 | 2023-02-20 | 그린 5 홀딩 피티이 엘티디 | Self-releasable seat belt |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2500155B2 (en) * | 1991-03-25 | 1996-05-29 | 富士通電装株式会社 | Multilayer circuit board |
| JP2806710B2 (en) * | 1992-10-06 | 1998-09-30 | 日本碍子株式会社 | Multilayer dielectric filter |
| US5285570A (en) * | 1993-04-28 | 1994-02-15 | Stratedge Corporation | Process for fabricating microwave and millimeter wave stripline filters |
| JPH0758506A (en) * | 1993-08-09 | 1995-03-03 | Oki Electric Ind Co Ltd | Lc type dielectric filter and antenna multicoupler using it |
| DE69432059T2 (en) * | 1993-08-24 | 2003-11-20 | Matsushita Electric Ind Co Ltd | Layered dielectric filter |
| JPH11136002A (en) * | 1997-10-30 | 1999-05-21 | Philips Japan Ltd | Dielectric filter and method for adjusting passband characteristic of dielectric filter |
| US6064281A (en) * | 1998-06-26 | 2000-05-16 | Industrial Technology Research Institute | Semi-lumped bandpass filter |
| JP2002299905A (en) * | 2001-03-30 | 2002-10-11 | Ngk Insulators Ltd | Laminated dielectric filter |
| JP4511478B2 (en) * | 2005-04-25 | 2010-07-28 | 京セラ株式会社 | BANDPASS FILTER, HIGH FREQUENCY MODULE, AND RADIO COMMUNICATION DEVICE USING THE SAME |
| CN110602883B (en) * | 2014-09-26 | 2022-10-21 | 株式会社村田制作所 | Transmission line and electronic device |
| RU2688826C1 (en) * | 2018-06-18 | 2019-05-22 | Федеральное государственное автономное образовательное учреждение высшего образования "Сибирский федеральный университет" | Microstrip band-pass filter |
-
1991
- 1991-01-31 JP JP03031888A patent/JP3126155B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102501852B1 (en) * | 2019-08-22 | 2023-02-20 | 그린 5 홀딩 피티이 엘티디 | Self-releasable seat belt |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04246901A (en) | 1992-09-02 |
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