JP3123657B2 - Semiconductor film fabrication method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for obtaining an N-type or P-type semiconductor, that is, a semiconductor film having one conductivity type by a low-temperature process.

[0002]

2. Description of the Related Art Known methods for obtaining a semiconductor having one conductivity type by a low-temperature process include a method using an ion implantation method and a method using a sputtering method.

[0003] However, the ion implantation method has a problem in productivity, and the sputtering method has a feature that it can be performed at a low temperature of 200 ° C. or less and is excellent in productivity. The electric characteristics of the film were low (for example, the electric characteristics of a device formed using a semiconductor film obtained by sputtering were low), and the film was not practical.

Conventional methods for obtaining a P-type or N-type semiconductor film by a sputtering method include, for example, a target obtained by adding an impurity imparting one conductivity type to single crystal silicon to obtain a one conductivity type silicon film. Sputtering in an atmosphere using only argon,
It is known that sputtering is performed in an argon atmosphere to which a reaction gas (for example, phosphine) containing an element imparting one conductivity type is added using a single crystal silicon target to which an impurity imparting P type or N type is not added. Is considered to be the way. However, in the conventional method, 1
A P-type or N-type semiconductor film having a conductivity of 0 ⁻⁵ (Ωcm) ⁻¹ or more could not be obtained. This is because impurities imparting P-type or N-type conductivity do not substitute in the semiconductor and become donors or acceptors.

[0005]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor film having a high conductivity and one conductivity type by using a sputtering method which can be formed at a low temperature and is excellent in productivity. I do.

[0006]

SUMMARY OF THE INVENTION The present invention is directed to a method for reducing the partial pressure ratio of hydrogen in an inert atmosphere such as argon containing hydrogen to 30.
% Or more of a single crystal or polycrystal element to which at least 1 × 10 ¹⁷ cm ⁻³ of a P-type or N-type element imparting one conductivity type is added in an atmosphere of at least 1 × 10 ¹⁷ cm ⁻³ . This is a method for manufacturing a semiconductor, including forming a P-type or N-type semiconductor film having one conductivity type by performing film formation by sputtering using a semiconductor target.

A feature of the present invention is that at a film forming temperature (substrate temperature) of 300 ° C. or less, a single-crystal or polycrystalline silicon target has a conductivity of 100 (Ωcm) ^{−1 to} 0.1.
([Omega] cm) using a target obtained by adding the III or IV trivalent element which is an impurity imparting one conductivity type such that ^-1 performs deposition by sputtering in an atmosphere containing hydrogen, obtained by the sputtering The conductivity of the obtained film is 1/100 of the conductivity of the target.
An object is to obtain an N-type or P-type semiconductor having a conductivity of 1/3 or more, that is, 0.1 (Ωcm) ⁻¹ or more.

In the structure of the present invention, the substrate may be grounded. However, in order to reduce the influence of ion sputtering on the substrate, a substrate (generally, a glass substrate, a silicon substrate, or the like) is used. Used) may be electrically floating, that is, insulated from the surroundings.

In an atmosphere where the hydrogen partial pressure ratio is 30% or more, sputtering is performed when the hydrogen partial pressure is 3%.
The conductivity of a semiconductor having one conductivity type obtained by sputtering in an atmosphere of 0% or more is 10 ⁻² (Ω
cm) ^-1 or more.

If the target used for sputtering film formation is a silicon semiconductor film, an impurity imparting N conductivity type is phosphorus (P), arsenic (As), antimony (Sb), or P type conductivity. As the impurity imparting a body, a single crystal or polycrystalline silicon target to which boron (B), aluminum (Al), or the like is added can be used.
In addition, as a single crystal or polycrystalline semiconductor target,
Ge, Se, or a compound semiconductor such as gallium arsenide, gallium antimony, or the like may be used depending on the semiconductor film to be formed as well as silicon, that is, silicon.

In the structure of the present invention, the semiconductor film having one conductivity type after the film formation may be subjected to thermal annealing at a temperature of 700 ° C. or less.

However, by adopting the structure of the present invention, a conductivity of 10 ⁻² (Ωcm) ⁻¹ or more, which has conventionally been obtained by thermally annealing a semiconductor film having one conductivity type obtained by sputtering or CVD. Rate low (15
It is a great feature that it can be obtained by sputtering at 0 ° C. or lower. This is apparent from the Raman spectrum of the N-type semiconductor film obtained by the method of the present invention immediately after the film formation and without annealing shown in FIG. Referring to FIG. 3, the Raman spectrum of the N-type semiconductor film obtained by sputtering in an atmosphere where the partial pressure of hydrogen is 50% has a place where the wave number is lower than 521 cm ⁻¹ which is the peak of single crystal silicon (c-Si). It can be seen that a peak indicating crystallinity appears in FIG.

It is needless to say that the structure of the present invention can be applied not only to silicon semiconductors but also to other semiconductors. For example, an impurity (e.g., boron, phosphorus) which imparts one conductivity type by using a germanium target simultaneously and silicon is added (silicon), Si _x G having one conductivity type
An e _1-x semiconductor film can be obtained. In this case, another characteristic is that the composition ratio of the semiconductor film can be changed by changing the area of each target.
According to this concept, a semiconductor film having a more complicated composition ratio can be obtained by using a plurality of targets at the same time.

[0014]

Embodiment 1 This embodiment relates to a magnetron type R shown in FIG.
This is for producing an N-type silicon semiconductor film using an F sputter device. Hereinafter, the magnetron type RF sputtering apparatus shown in FIG. 1 will be described. Hereinafter, the magnetron type R shown in FIG.
The outline of the F sputtering apparatus will be described.

In FIG. 1, (12) is a substrate, (13)
Is a holder that can be rotated as needed, (1
4) is a heater for heating the substrate, (15) is a gas introduction system,
(17) is a gas introduction system valve, and (18) is a gas supply system, for example, a cylinder filled with hydrogen. Although only one type of gas supply system is shown in FIG. 1, other gas supply systems such as argon, phosphine, diborane, and nitrogen may be provided as necessary. In this case, a plurality of gas introduction systems are provided. At the same time, a gas may be introduced into the reaction chamber. (19) is a high frequency power supply (13.56 MH)
z), (20) is a high-frequency matching device,
(21) is a magnetron portion provided with a permanent magnet (22) that rotates as required on a circle.

Further, (23) is a shutter for preventing sputtered particles (sputtered atoms, clusters, ions, etc.) from reaching the substrate. The shutter (23) prevents impurities from becoming sputtered particles and reaching the substrate immediately after the start of sputtering. However, the shutter (23) can be used so that the sputtered particles do not reach the surface to be formed, if necessary. (24) is a target. The target can form a thin film doped with an impurity by mixing an impurity element such as phosphorus, boron, or fluorine as needed. (25) is a gas exhaust system, (26) is a turbo molecular pump, and (27) is an oil rotary pump. (28) and (29) are exhaust system valves. Further, (34) is a cryopump (3) for further evacuation of a high vacuum state or specific impurities.
1) An exhaust system (34) including a rotary pump (33) is provided. Note that (30) and (33) correspond to the exhaust system (3
4) The valve.

Among them, an exhaust system (34) provided with a cryopump is mainly used for high-vacuum exhaust before film formation, and can exhaust the reaction paper to about 10 ⁻¹⁰ Torr.
Gases and molecules adsorbed in the reaction chamber can be exhausted. In particular, high-vacuum evacuation before film formation involves oxygen in the film,
It is effective for reducing the amount of carbon and nitrogen impurities. In this embodiment, the substrate (12) is heated by the heater (14), but may be heated by an infrared lamp.

In this embodiment, the target used was a molten silicon target having a resistivity ρ = 0.60 Ωcm to which antimony, which is an impurity imparting one conductivity type, was added. For example, it is needless to say that As and Sb can be used for N-type and B for P-type. It is also effective to increase the conductivity of the target as much as possible by a method such as thermal annealing. The film forming conditions are as follows: in a mixed atmosphere of hydrogen and argon, using a hydrogen partial pressure as a parameter, a film forming temperature of 150 ° C., a pressure of 0.5 pa, an RF power of 400 W, and a film thickness of 2,000 °
Was formed to a thickness of

FIG. 2 shows the relationship between the conductivity σ (Ωcm) ^{−1 of} the N-type semiconductor film obtained according to the present embodiment and the volume% of hydrogen in the atmosphere at the time of film formation. FIG. 2 shows that when the hydrogen partial pressure during sputtering is 30% or more, σ = 1
It can be seen that a value of 0 ⁻² (Ωcm) ⁻¹ or more is obtained.

FIG. 3 shows a Raman spectrum obtained in this embodiment. It can be seen that occur a hydrogen partial pressure at the or sharp peak below 521 cm ^-1 is a peak of the the P _H to increase relative to P _T is the total pressure monocrystalline silicon as illustrated in FIG.

Generally, if a value of σ = 10 ⁻¹ (Ωcm) ⁻¹ or more can be obtained, it becomes sufficiently practical as a source / drain region of an insulated gate type field effect transistor.
Considering this, a silicon film having one conductivity type (in this case, an N-type silicon film) obtained by sputtering in an inert atmosphere to which hydrogen is added according to the present invention can be formed over a large area. Therefore, it can be said that it is a semiconductor film having one conductivity type which is more economical and more excellent in electrical characteristics than conventional impurity ion doping or the like.

[0022] In the configuration of the present invention, the film formed by these methods, oxygen is 7 × ¹⁰ 19 ^{cm -3}
The concentration is preferably at most 1 × 10 ¹⁹ cm ⁻³ or less. For example, oxygen is 8 × 10 ¹⁸ cm as an impurity in SIMS (secondary ion mass spectrometry).
⁻³ , carbon 3 × 10 ¹⁶ cm ⁻³ . In addition, hydrogen is 4
× 10 ²⁰ cm ⁻³ and silicon 4 × 10 ²² cm ^−3.
Was 1 atomic%.

In this embodiment, the exhaust system (34) shown in the magnetron type RF sputtering apparatus shown in FIG.
The selective exhaustion of specific impurities such as oxygen, carbon, and nitrogen by using a cryopump provided in the semiconductor device has a great effect for improving the quality of a semiconductor film to be formed by sputtering. For example, if there is an oxygen, carbon, or nitrogen impurity other than an impurity that contributes as an acceptor or a donor in a P-type or N-type semiconductor film to which an impurity imparting one conductivity type is added, the semiconductor film is used. This adversely affects the performance of the device when the device is manufactured. For example, when an oxygen element is mixed in a semiconductor layer included in a solar cell, conversion efficiency and durability may be deteriorated. Therefore, by evacuating these impurities such as oxygen, carbon, and nitrogen efficiently, an adverse effect on the semiconductor film can be prevented.

By using a cryopump, which is an adsorption pump provided in the sputtering apparatus shown in FIG. 1 used in this embodiment, molecules consisting of impurities such as oxygen, carbon and nitrogen can be efficiently exhausted. . For example, in this embodiment, when film formation is performed using only the exhaust system (25) provided with a turbo molecular pump, the oxygen concentration contained in the formed film is determined by SIMS (secondary ion mass spectrometry). According to the above, it was about 3 × 10 ¹⁹ cm ⁻³ , but the concentration of oxygen contained in the film formed by using the exhaust system (34) equipped with a cryopump together at the same film forming pressure was 6 × 10 ¹⁹ cm ^−3. It was able to be set to 10 ¹⁸ cm ⁻³ . The carbon concentration in the formed film was 3 × 10
¹⁶ cm ⁻³ can be obtained, and hydrogen is 4 × 10 ²⁰ c
m ⁻³ , which was 1 atomic% when compared with silicon 4 × 10 ²² cm ⁻³ .

In the structure of the present invention, it has been obtained as data that a relatively high film forming pressure of about 2.5 Pa is good, so that it is inappropriate to form a film in an ultra-high vacuum state. Therefore, as described above, the use of a cryopump capable of exhausting oxygen, carbon, and nitrogen as adsorbed molecules has a remarkable effect. Furthermore, in the present invention, in a mixed atmosphere of an inert gas such as argon and hydrogen,
Since the film is formed by sputtering, oxygen, which is the most problematic impurity, combines with hydrogen to form a molecule and exists in the reaction space. Therefore, as described above, the use of the cryopump makes it possible to efficiently exhaust the molecules composed of oxygen and hydrogen. Further, in the case of forming a semiconductor film which must contain an impurity (for example, phosphorus or antimony) contributing to a P-type or N-type conductivity as in the structure of the present invention, a gas phase such as a CVD method using a reaction gas is used. In the growth method, since impurities that contribute to the conductivity type must be added to the gas phase, there is a problem that unnecessary impurities are necessarily mixed in. As a method of solving such a problem, there is a method of using a special reaction furnace using an extremely high-purity reaction gas. However, there is a problem of cost and poor productivity.

As described above, as in the present embodiment, a semiconductor film, particularly one conductivity type is imparted by sputtering in an inert atmosphere containing hydrogen without using a reaction gas by using a turbo molecular pump and a cryopump together. II
A method for manufacturing a semiconductor film containing an element having a valence of I or V is as follows.
It can be said that this method is capable of efficiently exhausting oxygen, carbon, and nitrogen, which are unnecessary impurities in a semiconductor film to be formed, efficiently, and is extremely low in cost and excellent in productivity.

In the structure of the present invention, the N-type semiconductor film after film formation may be subjected to thermal annealing at a temperature of 700 ° C. or less. However, since the crystallinity deteriorates when the film forming temperature is 200 ° C. or higher, the film forming temperature during sputtering is 20 ° C.
0 ° C. or less, preferably 100 ° C. or less. This is clear from FIG. FIG. 4 shows that, in this embodiment, under the condition that the hydrogen partial pressure is 50%, the film is formed at a temperature of 600 ° C.
FIG. 6 shows the relationship between the XRD intensity and the film forming temperature of a film that has been subjected to thermal annealing for a long time. This figure shows that the film formed at a temperature around 200 ° C. has almost no crystallinity.

The tendency shown in FIG. 4 can be explained by the following model. Since the silicon film obtained by sputtering in this embodiment is sputtered in an atmosphere in which a large amount of hydrogen is present at the time of sputtering, the elements constituting the target are clusters of tens to hundreds of thousands of atoms. While the clusters fly out of the target and fly in the hydrogen plasma, the dangling bonds of the clusters are neutralized by hydrogen, and the clusters reach the substrate. At this time, in the target,
Since the impurity imparting the P-type or N-type conductivity functions as an acceptor or a donor, the impurity also serves as an acceptor or a donor in the cluster flying toward the substrate. Therefore, when the cluster reaches the substrate and forms a silicon film, the impurity imparting the P-type or N-type conductivity has a characteristic that it acts in a film formed by sputtering as an acceptor or a donor. When the temperature at the time of film formation is high when the cluster whose dangling bonds are neutralized by hydrogen reaches the substrate from the target, the hydrogen neutralizing the dangling bonds of the silicon clusters separates away from the substrate. In, the clusters cannot be connected to each other and cannot form an order. Therefore, when a silicon film formed in an atmosphere of 200 ° C. or more is thermally annealed, the silicon film cannot be brought into a more ordered state, and as a result, the XRD intensity is not high. On the other hand, when the temperature at the time of film formation is low, the clusters of silicon, which are the sputtered particles, are bonded via hydrogen on the substrate. As a result, a relatively high order state is achieved. 45
By performing thermal annealing at a temperature of 0 to 700 degrees, the silicon clusters bonded via hydrogen become bonds between silicon atoms, shift to a higher order state, and bond with each other by existing silicon. Therefore, silicon comrades pull each other. When the crystal is measured by laser Raman spectroscopy, a peak shifted from the single crystal silicon peak 521 cm ^-1 to a lower frequency side is observed. This 52
A peak shifted to a lower frequency side than 1 cm ^-1 indicates a crystalline state having a weak lattice distortion. Further, the apparent particle size is calculated from 50 to 500 ° from the half width.
Although it is like a microcrystal, there are actually many high crystallinity regions with a cluster structure,
Between the clusters, a film having a semi-amorphous structure bonded (anchored) by silicon can be formed. Therefore, when the film formation temperature is low (150 ° C.
In a silicon film obtained by sputtering in the following atmosphere), the order is further promoted by thermal annealing, whereas a film formed at a high substrate temperature has an order from the beginning as described above. However, even if thermal annealing is performed, a film having a semi-amorphous structure in which the clusters are bonded to each other by silicon (anchoring) cannot be formed, and the peak of XRD is scarce.

In the present invention, a single-crystal or polycrystalline semiconductor target is used as a target, and the target is an impurity which imparts a P-type or N-type conductivity to the target.
100% ionized II- or V-valent impurities, that is, the III- or V-valent impurities are completely replaced as acceptors or donors, and the target is sputtered in an atmosphere containing hydrogen to remove the impurities therein. The clusters substituted as acceptors or donors in the semiconductor film fly toward the substrate and reach the substrate while neutralizing the dangling bonds by hydrogen plasma. The valence impurities have a high ionization rate, and these impurities are substituted as acceptors or donors, thereby increasing the ionization rate.

It goes without saying that the structure of the present invention can be applied not only to silicon semiconductors but also to other semiconductors. For example, silicon (silicon) to which an impurity imparting one conductivity type is added
And by using a germanium target simultaneously, it is possible to obtain a semiconductor film of the Si x _{Ge 1-x} having one conductivity type. In this case, the composition ratio of the semiconductor film can be changed by changing the area of each target. According to this concept, a semiconductor film having a more complicated composition ratio can be obtained by using a plurality of targets at the same time.

At the time of sputtering, a halogen element is added to the atmosphere, and NF ₃ or the like is added in an amount of about 0.1 to 10% in order to neutralize dangling bonds of sputtered atom clusters similarly to hydrogen. You may.

[0032]

Embodiment 2 In this embodiment, the magnetron type R shown in FIG.
In which to obtain a semiconductor film of boron (B) P-type which is doped with Si _{x Ge} 1-x with F sputtering apparatus. In the present embodiment, a magnetron type RF sputtering apparatus is used, and a pressure of 2.5 pa, an RF power of 200 W, and a substrate temperature of 1
Sputtering is performed at 00 ° C. in a mixed atmosphere of hydrogen and argon having a hydrogen partial pressure ratio of 80%, and then 600
N-type Si _x G subjected to thermal annealing at 7 ° C. for 7272 hours
e _1-x semiconductor film. A single crystal target of silicon and germanium is formed on a substrate by dispersing and dispersing a plurality of molten substrates each containing phosphorus of 1 × 10 ¹⁷ cm ⁻³ or more in the same area, and further rotating the substrate side by planetary rotation. The uniformity of the N-type Si _x Ge _1-x semiconductor film to be formed is improved.

Also in this embodiment, since the phosphorus in the silicon and germanium single crystal target is replaced as a donor, the conductivity of the target of the present invention is 1/100 to 1/3 of the target conductivity. Can be manufactured.

The reason why the reaction pressure was increased to 2.5 pa is based on the results of an experiment shown in FIG. 5 performed by the present inventors. FIG. 5 shows the relationship between the pressure at the time of forming an N-type silicon semiconductor film subjected to thermal annealing at 600 ° C. for 72 hours after the film formation and the XRD intensity (ITENSITY). The film formation conditions under which the data in FIG. 5 were obtained were obtained by adding phosphorus to a single-crystal or polycrystalline silicon target so that the resistivity of the target became 2 to 3 KΩcm. The RF power is 400 W, and the atmosphere is a mixed atmosphere of hydrogen and argon having a hydrogen partial pressure ratio (P _T / P _T ) of 30%. After the film formation, thermal annealing was performed at 600 ° C. for 72 hours in an inert atmosphere.
FIG. 5 shows that the reaction pressure is preferably about 2.5 pa.

The reason why the RF power was set to 200 W is based on the experimental results shown in FIG. The data shown in FIG. 6 shows the input power and XRD intensity (ITENSITY) during film formation when the film forming pressure is 0.5 pa under the same conditions as the manufacturing conditions shown in FIG.
This is the relationship between FIG. 5 shows that the input power at the time of sputtering preferably has a relatively low value of about 200 W.

In this embodiment, the reason why the substrate temperature is set to 100 ° C. is based on the experimental results shown in FIG. The data shown in FIG. 4 shows the relationship between the substrate temperature and the XRD intensity of the obtained film under the same manufacturing conditions as those shown in FIG. Referring to FIG. 4, when the film formation temperature (in this case, the substrate temperature) is 100 ° C. or higher, the crystallinity of the film after the thermal annealing becomes low. It can be seen that the film after annealing has high crystallinity. This is because, as described above, when a film is formed at a low temperature, the sputtered silicon clusters are bonded by hydrogen in the atmosphere, and the silicon clusters are bonded by thermal annealing. Is to be preserved and promoted.

Also in this embodiment, by increasing the conductivity of the target, the conductivity of the sputtered film can be increased. This is because, as described above, the impurities that have become acceptors or donors in the target are present at a high ionization rate in the film formed by sputtering in an atmosphere containing hydrogen and are substituted as the acceptors or donors. , Target conductivity 1
P or N having high conductivity of / 100 to 1/3
This is because a semiconductor film of a mold type can be obtained.

[0038]

EXAMPLE 3 This example, the same conditions as in Example 2, in which was obtained the N-type semiconductor film to which phosphorus is mixed in the _{Si X C -X (0 ≦ X} ≦ 1). In this embodiment, the stoichiometric ratio can be changed by arranging silicon and carbon targets in a finely dispersed manner and changing the amounts thereof. In this case, the target or the substrate was rotated in order to increase the uniformity of the formed film.

In the examples in this specification, phosphorus, which is an element for imparting one conductivity type to a semiconductor,
A target to which boron or the like was added was used, but Si, Ge, or Si _x Ge _1-X (0 <X <
1) , Si _x C _1-X , (0 ≦ X < 1), etc., using Si, Ge, Si _x Ge _1-X (0 < X < 1) , Si _x C _1-X ,
It goes without saying that a semiconductor film such as (0 ≦ X < 1) may be formed.

[0040]

According to the present invention, sputtering is performed using a semiconductor target to which an impurity having one conductivity type is added, in an atmosphere containing 30% or more of hydrogen in an inert atmosphere containing hydrogen. As a result, a semiconductive film having a high conductivity and one conductivity type was obtained.

[Brief description of the drawings]

FIG. 1 shows a sputtering apparatus used for realizing the method of the present invention.

FIG. 2 shows the relationship between the conductivity of an N-type silicon semiconductor film obtained by the method of the present invention and the hydrogen partial pressure during film formation.

FIG. 3 shows a Raman spectrum of an N-type silicon semiconductor film obtained by the method of the present invention.

FIG. 4 shows the relationship between the film formation temperature and the XRD intensity of an N-type silicon semiconductor film obtained by the method of the present invention.

FIG. 5 shows a relationship between a film forming pressure and an XRD intensity of an N-type silicon semiconductor film obtained by a method of the present invention.

FIG. 6 shows a relationship between input RF power and XRD intensity at the time of forming an N-type silicon semiconductor film obtained by the method of the present invention.

 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-60-91627 (JP, A) JP-A-2-194620 (JP, A) JP-A-58-180072 (JP, A) JP-A-57-1982 11814 (JP, A) JP-A-57-109324 (JP, A) JP-A-1-276616 (JP, A)

Claims (2)

(57) [Claims] In an atmosphere containing hydrogen, sputtering is performed using a semiconductor target to which an element imparting one conductivity type is added; a semiconductor film having one conductivity type is formed over a substrate; and a semiconductor film manufacturing method the semiconductor film is annealed at a temperature of 700 ° C. 450 ° C. or more for promoting crystallization of said semiconductor film, 200 a temperature of the substrate when performing the sputtering
℃ and less, the partial pressure of the hydrogen was 30% or more with respect to the total pressure of the atmosphere containing hydrogen, semiconductor targeting the element imparting the one conductivity type is added
As a unit, a unit to which a trivalent or V-valent impurity is added is used.
Crystalline or polycrystalline Si, Ge, Si _x Ge _1-X (0 <X <1)
Alternatively, a method for manufacturing a semiconductor film, comprising using Si _x C _1-X (0 ≦ X <1) . 2. In an atmosphere containing hydrogen, sputtering is performed using a semiconductor target to which an element imparting one conductivity type is added, so that the semiconductor target has one conductivity type and has an oxygen concentration of 7%.
A semiconductor film having a size of × 10 ¹⁹ cm ⁻³ or less is formed on a substrate, and the semiconductor film obtained by sputtering is annealed at a temperature of 450 ° C. to 700 ° C. to promote crystallinity of the semiconductor film. When performing the sputtering, the temperature of the substrate is set to 200
℃ and less, the partial pressure of the hydrogen was 30% or more with respect to the total pressure of the atmosphere containing hydrogen, semiconductor targeting the element imparting the one conductivity type is added
As a unit, a unit to which a trivalent or V-valent impurity is added is used.
Crystalline or polycrystalline Si, Ge, Si _x Ge _1-X (0 <X <1)
Alternatively, a method for manufacturing a semiconductor film, comprising using Si _x C _1-X (0 ≦ X <1) .