JP3114835B2 - Quartz glass article and method for producing the same - Google Patents

Quartz glass article and method for producing the same

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Publication number
JP3114835B2
JP3114835B2 JP05291258A JP29125893A JP3114835B2 JP 3114835 B2 JP3114835 B2 JP 3114835B2 JP 05291258 A JP05291258 A JP 05291258A JP 29125893 A JP29125893 A JP 29125893A JP 3114835 B2 JP3114835 B2 JP 3114835B2
Authority
JP
Japan
Prior art keywords
quartz glass
projection
ppm
powder
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP05291258A
Other languages
Japanese (ja)
Other versions
JPH07126025A (en
Inventor
朗 藤ノ木
透 横田
健男 円谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP05291258A priority Critical patent/JP3114835B2/en
Publication of JPH07126025A publication Critical patent/JPH07126025A/en
Application granted granted Critical
Publication of JP3114835B2 publication Critical patent/JP3114835B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Glass Melting And Manufacturing (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Compositions (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は石英ガラス体の少なくと
も一面に突起体を形成してなる石英ガラス物品とその製
造方法に係り、特に半導体ウェーハ熱処理に用いられる
縦型ボートにおいてしばしば用いられる、突起、はめ込
み部を有する上蓋及び/または底板を効率的に製造する
方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz glass article having a projection formed on at least one surface of a quartz glass body and a method of manufacturing the same, and more particularly to a projection often used in a vertical boat used for heat treatment of semiconductor wafers. , A method of efficiently manufacturing a top lid and / or a bottom plate having a fitting portion.

【0002】[0002]

【従来の技術】近年、半導体ウェーハの熱処理手段は、
省設置面積及び自動装填の容易化の見地より従来の横型
炉から縦型炉に移行してきており、これに対応して該炉
内に装填されるウェーハボートも横型から縦型へと移行
してきている。そしてこの種の縦型ボートにおいては、
ウェーハ表面への処理ガスの均一接触と均熱の容易化を
図る為にボート全体を回転させるものが多いが、この場
合上方より垂下される回転軸に係合させるために(吊下
方式の場合)、若しくは設置方式のものにおいても芯出
し等の目的で上蓋に円筒状の突起体を形成するデザイン
が考案され、実用化されている。
2. Description of the Related Art In recent years, heat treatment means for semiconductor wafers has
From the viewpoint of saving installation area and facilitation of automatic loading, the conventional horizontal furnace has been shifted to a vertical furnace, and in response, the wafer boat loaded in the furnace has also shifted from a horizontal to a vertical furnace. I have. And in this type of vertical boat,
In many cases, the entire boat is rotated in order to facilitate uniform contact of the processing gas on the wafer surface and uniform heating. In this case, in order to engage with the rotating shaft suspended from above ) Or an installation type, a design in which a cylindrical projection is formed on the upper lid for the purpose of centering or the like has been devised and put to practical use.

【0003】また設置方式の縦型ボートにおいては、炉
内において、前記ボートの軸方向の均熱化と該ボートが
設置されている熱処理雰囲気空間とその下方のフランジ
取り付け部との断熱を図る為に、円筒断熱体からなる台
座上に設置される場合が多く、この場合円筒断熱体との
嵌合及び所定位置への精度良い嵌合を可能にするためボ
ート底板側に複雑な形状の嵌合突起を設ける場合があ
る。
Further, in a vertical boat of an installation type, in a furnace, the heat is soaked in the axial direction of the boat, and the heat treatment atmosphere space in which the boat is installed and the flange mounting portion below the heat treatment atmosphere space. In many cases, it is installed on a pedestal made of a cylindrical heat insulator, and in this case, fitting of a complicated shape to the boat bottom plate side to enable fitting with the cylindrical heat insulator and accurate fitting to a predetermined position. Projections may be provided.

【0004】このような縦型ボートの、上面に複雑な形
状の上蓋、底板を製造する場合、従来は石英ガラス平板
に石英ガラスの溶接棒をバーナー加熱により加熱、融着
しながら逐次肉盛りを行なった後、肉盛り部を研削加工
して所定形状に成型していた。
In the case of manufacturing a top cover and a bottom plate having a complicated shape on the upper surface of such a vertical boat, conventionally, a welding rod made of quartz glass is heated and fused by a burner heating to a quartz glass flat plate, and successive build-up is performed. After that, the build-up portion was ground to form a predetermined shape.

【0005】[0005]

【発明が解決しようとする課題】しかしながら溶接棒に
よる肉盛り加工では作業時間が非常に長く、また溶接速
度と加熱温度の調整がうまくいかないと泡をかんでしま
うため、作業に高度の熟練性を必要とし、而も長時間の
火加工なので作業環境が悪いという問題を有していた。
又前記の様にして製造された石英ガラス物品は熱歪をも
っているので、研削加工に先だってこれをアニールによ
る熱処理により歪除去をしなければならず、そして該歪
除去用のアニール処理は一般的に対象物を石英ガラスの
歪点以上の温度、具体的には1000〜1200℃に加
熱保持して行なわれるが、この際前記したように肉盛り
部と平板間では、石英ガラスの材質が異なっているため
に、2つの材質の界面に発生する歪を除去することはき
わめて困難で、加熱時間を非常に長くしても又温度を多
少高くしても界面上の歪除去は出来ず、この為前記歪に
起因して、特に研削加工時に界面より剥離若しくはクラ
ック等が生じやすい。又かかる欠点を解消するために、
前記アニール処理時の温度は上げすぎると石英物品が変
形してしまう。
However, in the overlaying process using a welding rod, the working time is extremely long, and if the adjustment of the welding speed and the heating temperature is not performed properly, bubbles may be smeared, requiring a high level of skill in the work. However, there was a problem that the working environment was poor because of the long-time fire working.
In addition, since the quartz glass article manufactured as described above has a thermal strain, the strain must be removed by heat treatment by annealing prior to grinding, and the annealing process for removing the strain is generally performed. The object is heated and held at a temperature higher than or equal to the strain point of quartz glass, specifically, at 1000 to 1200 ° C. At this time, the material of the quartz glass differs between the built-up portion and the flat plate as described above. Therefore, it is extremely difficult to remove the strain generated at the interface between the two materials, and it is not possible to remove the strain on the interface even if the heating time is very long or the temperature is slightly increased. Due to the distortion, peeling or cracking is likely to occur from the interface particularly during grinding. In order to eliminate such disadvantages,
If the temperature during the annealing treatment is too high, the quartz article will be deformed.

【0006】本発明はかかる従来技術の欠点に鑑み、無
気泡で非常に高品質な突起体部をきわめて効率的にかつ
安価に製造しうる石英ガラス物品とその製造方法を提供
する事を目的とする。本発明の他の目的はアニール処理
時の温度を無用に高くすることなく、突起体と石英ガラ
ス体の界面に内部歪が生じることなく円滑にアニールを
可能にした石英ガラス物品とその製造方法を提供する事
を目的とする。
SUMMARY OF THE INVENTION In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a quartz glass article and a method for manufacturing the same, which can produce bubble-free and very high-quality projections very efficiently and at low cost. I do. Another object of the present invention is to provide a quartz glass article and a method of manufacturing the same that enable smooth annealing without causing internal strain at the interface between the projection and the quartz glass body without unnecessarily increasing the temperature during the annealing process. The purpose is to provide.

【0007】[0007]

【課題を解決するための手段】本発明は石英ガラス体の
少なくとも一面に突起体を形成してなる石英ガラス物品
において、高温加熱した石英ガラス体上への石英ガラス
粉もしくは水晶粉を供給しながら加熱融着せしめて前記
石英ガラス体上へ突起体(肉盛部)を生成する点を第1
の特徴とし、第2の特徴は前記突起体と石英ガラス体と
の間のOH差を30ppm以下若しくは石英ガラス体の
OH値に対し50%以内のいずれか多い方の値に収まる
ようにした事を特徴とするものである。尚、本発明は前
記石英ガラス物品が、半導体ウェーハ熱処理用の縦型ボ
ートの上蓋及び/又は底板に場合に好適に適用される
が、これのみに限定されない。
SUMMARY OF THE INVENTION The present invention is directed to a quartz glass article having a projection formed on at least one surface of a quartz glass body while supplying quartz glass powder or quartz powder onto the quartz glass body heated at a high temperature. The first point is to form a projection (facing part) on the quartz glass body by heat fusion.
The second feature is that the OH difference between the projection and the quartz glass body is set to 30 ppm or less or within 50% of the OH value of the quartz glass body, whichever is greater. It is characterized by the following. The present invention is suitably applied to the case where the quartz glass article is used as a top cover and / or a bottom plate of a vertical boat for heat treatment of a semiconductor wafer, but is not limited thereto.

【0008】そしてこのような石英ガラス物品は、回転
しながら加熱炉内に設置されている石英ガラス体を19
00℃以上の高温に加熱しつつ、その上面側に石英ガラ
ス粉もしくは水晶粉を供給しながら加熱融着せしめ肉盛
部を生成する工程と、前記肉盛部を機械加工により所定
形状に形成する工程とを具え、前記石英ガラス粉もしく
は水晶粉の加熱溶融手段を、前記石英ガラス体のOH含
有量に応じて酸水素火炎もしくは電気アーク火炎に選択
する事、例えば前記石英ガラス体に含有されるOH基が
100ppm以上の領域では酸水素火炎を、50ppm
以上100ppm以下の領域においては酸水素火炎もし
くは電気アークのいずれかを、50ppm以下の領域で
は電気アーク火炎を選択する事により達成される。
[0008] Such a quartz glass article is obtained by rotating a quartz glass body, which is installed in a heating furnace, while rotating it.
A step of heating and fusing while supplying quartz glass powder or quartz powder to the upper surface side while heating to a high temperature of 00 ° C. or more to form a built-up portion, and forming the built-up portion into a predetermined shape by machining. Selecting a means for heating and melting the quartz glass powder or quartz powder to an oxyhydrogen flame or an electric arc flame according to the OH content of the quartz glass body, for example, being contained in the quartz glass body. In the region where the OH group is 100 ppm or more, an oxyhydrogen flame, 50 ppm
This is achieved by selecting either an oxyhydrogen flame or an electric arc in the region of 100 ppm or less and an electric arc flame in the region of 50 ppm or less.

【0009】[0009]

【作用】本発明においては例えば図1に示すように十分
に保温された炉内の回転するテーブル上に製造される石
英物品の基体となる石英ガラス体を設置し、その突起形
状に合せてベルヌイ法に準じた粉体融着法により突起体
を形成する。例えば、デザインされる突起体の形状が平
板の中央部にある場合には図1に示すように粉体を融着
せしめる焦点を石英平板の回転中心に合わせ融着を行な
う事により、円筒状の突起体を効率よく得ることができ
る。また突起体がリング状の場合には図2に示すように
粉体を融着する焦点を中心から所定の距離ずらして融着
せしめる事により、形状精度のよいリング状の突起体を
簡単に得ることができる。従って、かかる技術手段によ
れば、従来溶接棒の肉盛りによって形成されていた突起
体部をベルヌイ法に準じた粉体を融着する手法で目的と
する石英ガラス体上に融着せしめる事により、無気泡で
非常に高品質な突起体部をきわめて効率的にかつ安価に
製造できる。
In the present invention, as shown in FIG. 1, for example, a quartz glass body serving as a base of a quartz article to be manufactured is placed on a rotating table in a furnace kept sufficiently warm, and a Bernui is formed according to the shape of the projection. A protrusion is formed by a powder fusion method according to the method. For example, when the shape of the projection to be designed is located at the center of the flat plate, as shown in FIG. Protrusions can be obtained efficiently. In the case where the projections are ring-shaped, as shown in FIG. 2, the focal point for fusing the powder is shifted by a predetermined distance from the center and the powder is fused to easily obtain a ring-shaped projection having good shape accuracy. be able to. Therefore, according to such a technical means, the projecting portion conventionally formed by the build-up of the welding rod is fused to the target quartz glass body by a method of fusing powder according to the Bernoulli method. A very high-quality, bubble-free projection can be produced very efficiently and inexpensively.

【0010】一方、このようにして製造された石英ガラ
ス物品は熱歪をもっているので、研削加工に先だってこ
れをアニール除去しなければならないが、この際石英ガ
ラスの材質が異なってしまうと2つの材質の界面に発生
する歪を除去することはきわめて困難である事は前記し
た通りである。そこで本発明はアニール処理の際に界面
の熱歪差の発生の原因が、半導体工業用に用いられる高
純度石英ガラスの場合は石英ガラスに含有させるOHの
量で決定される事を見出し、石英平板のOH基の含有量
に応じて粉体を融着する際の加熱手段を、石英平板が有
水タイプのシリカガラスの場合には酸水素火炎バーナ
を、無水タイプのシリカガラスの場合には電気アーク火
炎バーナを適宜選択することによって突起体部と基体と
なるべき石英ガラス体との間のOH基をほぼ一致させ、
これによりアニール処理によっても界面に熱歪が残留せ
ず、安定した品質の縦型ボートその他の石英ガラス物品
が製造できる事を見いだした。
On the other hand, since the quartz glass article manufactured in this way has thermal strain, it must be annealed and removed prior to the grinding process. As described above, it is extremely difficult to remove the strain generated at the interface of the substrate. Therefore, the present invention has found that the cause of the difference in thermal strain at the interface during the annealing treatment is determined by the amount of OH contained in the quartz glass in the case of high-purity quartz glass used in the semiconductor industry. Heating means for fusing powder in accordance with the content of OH groups in the flat plate, an oxyhydrogen flame burner when the quartz flat plate is a water type silica glass, and By appropriately selecting an electric arc flame burner, the OH groups between the projection portion and the quartz glass body to be the base are substantially matched,
As a result, it has been found that heat distortion does not remain at the interface even by the annealing treatment, and that a vertical boat or other quartz glass articles of stable quality can be manufactured.

【0011】即ちOH基残有量の多い融水タイプの石英
ガラスには一般的に100〜300ppmのOH基が含
有されており、この石英ガラスを基体にして本発明に示
される方法によって突起体を形成する場合には、アニー
ル工程で歪が除去できる程度に類似したOHの含有量を
形成する突起体部に与えてやれば良く、具体的には融着
の加熱手段を酸水素火炎バーナーで行なえばよい。酸水
素バーナーを熱源にすれば、形成される突起体に含まれ
るOH量は、水晶粉を使用する場合にはその粒度、石英
ガラス粉を使用する場合には粒度と含有されるOHの量
によって、さらに融着体の成長速度、火炎を形成する酸
素、水素のバランスによって100ppm以上1000
ppm程度までの調整が可能である。
That is, fused silica glass having a large residual amount of OH groups generally contains 100 to 300 ppm of OH groups. Is formed, the OH content may be given to the protrusions that are similar to the extent that the strain can be removed in the annealing step.Specifically, the heating means for fusion is performed by an oxyhydrogen flame burner. Just do it. If an oxyhydrogen burner is used as a heat source, the amount of OH contained in the formed projections depends on the particle size when using quartz powder, and on the particle size and the amount of OH contained when using quartz glass powder. 100 ppm or more and 1000 ppm depending on the growth rate of the fused body and the balance of oxygen and hydrogen forming a flame.
Adjustment to about ppm is possible.

【0012】一方、無水タイプの石英ガラスには通常O
Hは全く含有されていないか、あるいは20ppm以下
のOHが含有されている。このような石英ガラスを基体
として本発明を実施するには、融着して得られる突起体
部に含まれる石英ガラスのOH量を同様にきわめて低い
ものとしなければ、どのようなアニール処理によっても
歪除去は困難になる。そのためには前記融着のの加熱手
段として電気アーク火炎を好適に選択すればよい。ここ
で加熱手段を電気アーク火炎バーナに選択したばあいで
も、水晶粉を原料とする場合にはその粒度、雰囲気を、
石英ガラス粉体を原料をする場合にはOHを実質的に含
有しない石英ガラス粉を用い、かつ粒度を雰囲気を適宜
選択することによって0〜100ppm程度のOH量の
調整が可能である。特にOHを実質的に含まない融着体
を形成する場合には粒度が100μ以上の比較的粗い粉
を用いてかつ露点が−30℃以下のドライ空気もしくは
窒素雰囲気内で本発明を実施する必要がある。
On the other hand, anhydrous quartz glass is usually O
H is not contained at all or OH of 20 ppm or less is contained. In order to carry out the present invention using such a quartz glass as a substrate, any annealing treatment is necessary unless the OH content of the quartz glass contained in the projections obtained by fusion is similarly extremely low. Removal of distortion becomes difficult. For this purpose, an electric arc flame may be suitably selected as a heating means for the fusion. Here, even when the heating means is selected as an electric arc flame burner, when quartz powder is used as a raw material, its particle size and atmosphere are
When quartz glass powder is used as a raw material, the amount of OH can be adjusted to about 0 to 100 ppm by using quartz glass powder substantially containing no OH and appropriately selecting the particle size and atmosphere. In particular, when forming a fused body substantially free of OH, it is necessary to use a relatively coarse powder having a particle size of 100 μ or more and to carry out the present invention in a dry air or nitrogen atmosphere having a dew point of −30 ° C. or less. There is.

【0013】しかしながら、実際には、石英ガラス基体
と突起体物である融着石英ガラスの間のOH量は必ずし
も厳密に一致させなくてはならないわけではなく、基体
のOHが0ppmであっても30ppm程度まであれ
ば、或いはOHが200ppm程度の場合には±100
ppm程度の差ならアニール処理によって歪の除去が可
能であることが分かった。一般に含まれるOHが高けれ
ば高いほどこの許容値は高くなるが、少なくとも±50
%以内であれば良い。従って、本発明の実施形態として
は石英ガラス基体のOH量が100ppm以上であれば
酸水素火炎を熱源に、50ppm以下であれば電気アー
ク火炎を熱源にすれば良いことが判明した。尚石英ガラ
ス基体のOHが50〜100ppmの場合にはどちらの
熱源を用いてもよいのであるが、実施の簡便さから考え
ると酸水素火炎を熱源にした方が好ましい。
However, in practice, the amount of OH between the quartz glass substrate and the fused silica glass, which is a projection, does not necessarily have to be exactly the same, and even if the OH of the substrate is 0 ppm. Up to about 30 ppm or ± 100 when OH is about 200 ppm
It was found that if the difference was about ppm, the strain could be removed by annealing. Generally, the higher the OH included, the higher this tolerance will be, but at least ± 50.
%. Therefore, it has been found that, as an embodiment of the present invention, if the OH content of the quartz glass substrate is 100 ppm or more, an oxyhydrogen flame may be used as a heat source, and if it is 50 ppm or less, an electric arc flame may be used as a heat source. Either heat source may be used when the OH of the quartz glass substrate is 50 to 100 ppm, but it is preferable to use an oxyhydrogen flame as the heat source from the viewpoint of simplicity of implementation.

【0014】[0014]

【実施例】以下、図面を参照して本発明の好適な実施例
を例示的に詳しく説明する。ただしこの実施例に記載さ
れている構成部品の寸法、材質、形状、その相対配置な
どは特に特定的な記載がない限りは、この発明の範囲を
それのみに限定する趣旨ではなく、単なる説明例に過ぎ
ない。図1は石英ガラス平板に突起体物を融着させるた
めの基本構成図で、1は水晶粉若しくは石英ガラス粉を
溶融するためのバーナで、基体となるべきOH含有量に
合せて前記石英ガラス平板2に含有されるOH基が10
0ppm以上の領域では酸水素バーナ1Aを、50pp
m以上100ppm以下の領域においては酸水素バーナ
1Aもしくは電気アークバーナ1Bのいずれかを、50
ppm以下の領域では電気アークバーナ1Bを選択す
る。そして前記バーナ1はいずれも中央上方より水晶粉
等の粉体5が供給され、前記バーナ炎により加熱溶融さ
れて石英ガラス平板2上に融着するように構成されてい
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be illustratively described in detail below with reference to the drawings. However, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, and the like of the components described in this embodiment are not intended to limit the scope of the present invention thereto, but are merely illustrative examples. It's just FIG. 1 is a basic configuration diagram for fusing a projection to a quartz glass flat plate. Reference numeral 1 denotes a burner for melting quartz powder or quartz glass powder. The number of OH groups contained in the plate 2 is 10
In the region of 0 ppm or more, the oxyhydrogen burner 1A is set to
In the region of not less than m and not more than 100 ppm, either the oxyhydrogen burner 1A or the electric arc burner 1B is
In the region below ppm, the electric arc burner 1B is selected. Each of the burners 1 is supplied with a powder 5 such as quartz powder from above the center, is heated and melted by the burner flame, and is fused on the quartz glass flat plate 2.

【0015】一方、基体となるべき石英ガラス平板2は
後記に示す加熱炉3内の回転テーブル4上に設置されて
おり、該石英ガラス平板2を回転させながら1900℃
以上の高温に加熱しつつ、その上面側よりバーナ1によ
り加熱溶融された石英ガラス粉もしくは水晶粉5を供給
しながら加熱融着せしめる事により例えば、デザインさ
れる突起体6の形状が平板2の中央部にある場合には図
1(A)に示すように粉体を融着せしめる焦点を石英平
板2の回転中心に合わせ融着を行なう事により、断面腕
型状の円筒状の突起体6を効率よく得ることができる。
そして前記突起体6は図1(B)に示すように、アニー
ル処理後研削により無駄肉部分60を削除して所定形状
の石英ガラス物品を形成する。
On the other hand, a quartz glass flat plate 2 to be a substrate is set on a rotating table 4 in a heating furnace 3 to be described later, and is rotated at 1900 ° C. while rotating the quartz glass flat plate 2.
By heating and fusing the quartz glass powder or quartz powder 5 heated and melted by the burner 1 from the upper surface side while heating to the above high temperature, for example, the shape of the designed projection 6 is In the case of the central portion, as shown in FIG. 1A, the focus for fusing the powder is set to the center of rotation of the quartz flat plate 2 and fusing is performed, so that the cylindrical projection 6 having an arm-shaped cross section is formed. Can be obtained efficiently.
Then, as shown in FIG. 1 (B), the projections 6 remove unnecessary portions 60 by grinding after annealing to form quartz glass articles having a predetermined shape.

【0016】また突起体6がリング状の場合には図2
(A)に示すように粉体を融着する焦点を中心から所定
の距離ずらして融着せしめ断面腕型状のリング状突起体
6を製造した後、アニール処理後研削により無駄肉部分
60を削除することにより形状精度のよい石英ガラス物
品を簡単に得ることができる。そして前記の様にして形
成された石英ガラス物品をアニール処理して内部歪を除
去した後、(B)に示すように研削加工により所定形状
に成型される。
When the projection 6 is ring-shaped, FIG.
As shown in (A), the focus at which the powder is fused is shifted by a predetermined distance from the center to produce a ring-shaped projection 6 having an arm-shaped cross section. By removing the quartz glass article, a quartz glass article having good shape accuracy can be easily obtained. Then, after the quartz glass article formed as described above is annealed to remove internal strain, it is formed into a predetermined shape by grinding as shown in FIG.

【0017】そして前記の方法で各種石英ガラス物品を
製造した。例えば図3は酸水素バーナ1Aを用いた実施
例で、(A)はその設備を示し、酸水素バーナ1Aは酸
素及び水素の供給管11、12よりなり、ホッパ8内に
滞留した水晶粉5を酸素の供給管12を介してバーナ1
A出口より石英ガラス平板2上に供給/融着可能に構成
されており、又該石英ガラス平板2は加熱炉3内の回転
可能なテーブル4に載置されており、そして例えば含有
するOH基の量が180ppmである直径φ180×厚
さ5mm の石英ガラス平板2を加熱炉3内の回転する
テーブル4上に置き、酸水素バーナ1Aにて2200℃
以上の高温に加熱し、上部のホッパ8内の粒径100μ
から200μの水晶粉5を酸素ガスとともに、バーナ1
Aの中央部に同伴させ、火炎中に1時間に200gの速
度で供給し、約1.5時間で直径8cm高さ4cmの偏
平半球形状の石英ガラスの突起体6を形成した。この場
合前記石英ガラスの突起体6の重量は220gであっ
た。このようにして得られた石英ガラス平板2を110
0℃で30分アニール処理を施した後、図3(B)に示
す形状に研削加工して無駄肉部分60を除去して、二段
円筒状の突起体6を有する縦型ボートの上蓋用の石英ガ
ラス部材を製造した。ここで、突起体6に含有されるO
Hの量は220ppmで、アニール処理により歪は完全
に除去できた。
Then, various quartz glass articles were manufactured by the above method. For example, FIG. 3 shows an embodiment using an oxyhydrogen burner 1A. FIG. 3 (A) shows the equipment, and the oxyhydrogen burner 1A is composed of supply pipes 11 and 12 for oxygen and hydrogen. Through the oxygen supply pipe 12
It is configured to be supplied / fused onto the quartz glass plate 2 from the outlet A, and the quartz glass plate 2 is placed on a rotatable table 4 in a heating furnace 3 and, for example, contains OH groups contained therein. Is placed on a rotating table 4 in a heating furnace 3 at 2200 ° C. with an oxyhydrogen burner 1A.
Heated to the above high temperature, and the particle size in the upper hopper 8 was 100 μm.
200μ quartz powder 5 together with oxygen gas
A was fed into the flame at a rate of 200 g / hour, and a flat hemispherical quartz glass projection 6 having a diameter of 8 cm and a height of 4 cm was formed in about 1.5 hours. In this case, the weight of the projection 6 of quartz glass was 220 g. The quartz glass flat plate 2 thus obtained is
After annealing at 0 ° C. for 30 minutes, the unnecessary portion 60 is removed by grinding to the shape shown in FIG. 3B, and the upper cover for a vertical boat having a two-stage cylindrical projection 6 is formed. Was manufactured. Here, the O contained in the protrusion 6
The amount of H was 220 ppm, and the strain was completely removed by the annealing treatment.

【0018】図4は電気アークバーナ1Bを用いた他の
実施例で、該アークバーナ1Bはアーク電極14と石英
ガラス導入管15よりなり、ホッパ8内に滞留した水晶
粉5を石英ガラス導入管15を介して電極14先端間よ
り石英ガラス平板2上に供給/融着可能に構成されてお
り、又該石英ガラス平板2は加熱炉3内の回転可能なテ
ーブル4に載置されており、そして例えば含有するOH
の量が20ppmである直径φ180×厚さ5mm の
石英ガラス平板2を加熱炉3内の回転するテーブル4上
に置き、三相交流のアーク用電極14によるアーク火炎
にて2200℃以上の高温に加熱し、上部のホッパ8内
の粒径100μから200μの水晶粉5を石英ガラス導
入管15によりアーク火炎の中央部に窒素により同伴さ
せ(図には窒素の導入管は示されていない)、火炎中に
1時間に150gの速度で供給した。約2.5時間で直
径8cm高さ4cmの偏平半球形状の石英ガラスの突起
体6を形成した。この場合石英ガラスの突起体6の重量
は220gであった。このようにして得られた石英ガラ
ス部材を1150℃で30分アニール処理を施した後、
図3(B)に示す形状に研削加工して、円筒状の突起体
6を有する半導体熱処理用縦型ボートの上蓋用の石英ガ
ラス部材を製造した。ここで、突起体6に含有されるO
Hの量は30ppmで、アニール処理により歪は完全に
除去できた。
FIG. 4 shows another embodiment using an electric arc burner 1B. The arc burner 1B comprises an arc electrode 14 and a quartz glass introducing tube 15, and the quartz powder 5 retained in the hopper 8 is supplied with a quartz glass introducing tube. The quartz glass flat plate 2 is configured to be supplied / fused onto the quartz glass flat plate 2 from between the tips of the electrodes 14 via 15, and the quartz glass flat plate 2 is mounted on a rotatable table 4 in the heating furnace 3. And for example containing OH
Is placed on a rotating table 4 in a heating furnace 3 and heated to a high temperature of 2200 ° C. or more by an arc flame by a three-phase alternating current arc electrode 14. After heating, the quartz powder 5 having a particle diameter of 100 μm to 200 μm in the upper hopper 8 is entrained by nitrogen into the central portion of the arc flame by the quartz glass introduction tube 15 (the nitrogen introduction tube is not shown in the figure). It was fed at a rate of 150 g / h into the flame. In about 2.5 hours, a flat hemispherical quartz glass projection 6 having a diameter of 8 cm and a height of 4 cm was formed. In this case, the weight of the quartz glass projection 6 was 220 g. After the thus obtained quartz glass member is annealed at 1150 ° C. for 30 minutes,
By grinding to the shape shown in FIG. 3B, a quartz glass member for the upper lid of a vertical boat for semiconductor heat treatment having a cylindrical projection 6 was manufactured. Here, the O contained in the protrusion 6
The amount of H was 30 ppm, and the strain was completely removed by the annealing treatment.

【0019】次に図1の酸水素バーナ1Aの設備を用い
て含有するOHの量が20ppmである直径φ180×
厚さ5mm の石英ガラス円盤を実施例1と同一の炉内
の回転するテーブル4の上に置き、同一の水晶原料を用
い、同一の条件で直径8cm高さ4cmの半球を少しつ
ぶした様な形状の石英ガラスの突起体6を形成した。こ
のようにして得られた石英ガラス部材を1150℃で1
20分アニール処理を施した後、図3(B)に示す形状
に研削加工したところ、残留する歪のために石英板2の
界面部が割れてしまい、目的とする石英ガラス部材を形
成することは出来なかった。ここで突起体6に含有され
るOHの量を調べたところ220ppmであり、アニー
ルよって歪除去が完全に出来なかったことが確認され
た。
Next, using the equipment of the oxyhydrogen burner 1A shown in FIG.
A quartz glass disk having a thickness of 5 mm was placed on a rotating table 4 in the same furnace as in Example 1, and the same crystal material was used. Under the same conditions, a hemisphere having a diameter of 8 cm and a height of 4 cm was slightly crushed. A projection 6 of quartz glass having a shape was formed. The quartz glass member thus obtained is heated at 1150 ° C. for 1 hour.
After performing the annealing treatment for 20 minutes, when grinding is performed to the shape shown in FIG. 3B, the interface of the quartz plate 2 is broken due to the remaining distortion, and a desired quartz glass member is formed. Could not. Here, when the amount of OH contained in the protrusions 6 was examined, it was 220 ppm, and it was confirmed that the strain could not be completely removed by annealing.

【0020】[0020]

【発明の効果】以上記載のごとく本発明によれば、無気
泡で非常に高品質な突起体をきわめて効率的にかつ安価
に製造しうるとともに、アニール処理時の温度を無用に
高くすることなく、突起体と石英ガラス体の界面に内部
歪が生じることなく円滑にアニール及び、研削加工を可
能にした石英ガラス物品を得る事が出来る等の種々の著
効を有す。
As described above, according to the present invention, a bubble-free and very high-quality projection can be produced very efficiently and inexpensively, and the temperature at the time of annealing can be increased without unnecessarily increasing the temperature. In addition, the present invention has various remarkable effects, such as being able to obtain a quartz glass article which can be smoothly annealed and ground without causing internal strain at the interface between the projection and the quartz glass body.

【図面の簡単な説明】[Brief description of the drawings]

【図1】石英ガラス平板の中央に突起体を融着させるた
めの基本構成図で、(A)は融着するための設備、
(B)は融着させた石英ガラス物品を示す。
FIG. 1 is a basic configuration diagram for fusing a projection to the center of a quartz glass flat plate, where (A) is a facility for fusing,
(B) shows a fused quartz glass article.

【図2】石英ガラス平板の周囲にリング状突起体を融着
させるための基本構成図で、(A)は融着するための設
備、(B)は融着させた石英ガラス物品を示す。
FIGS. 2A and 2B are basic configuration diagrams for fusing a ring-shaped projection around a quartz glass flat plate, wherein FIG. 2A shows a facility for fusing and FIG. 2B shows a fused quartz glass article.

【図3】酸水素バーナを用いた実施例で、(A)はその
設備を示し、(B)は該設備により製造された石英ガラ
ス物品を示す。
FIG. 3 shows an embodiment using an oxyhydrogen burner, wherein (A) shows the equipment and (B) shows a quartz glass article manufactured by the equipment.

【図4】電気アークバーナを用いた他の実施例を示す。FIG. 4 shows another embodiment using an electric arc burner.

【符号の説明】[Explanation of symbols]

2 石英ガラス平板 1A 酸水素バーナ 1B 電気アークバーナ 3 加熱炉 5 石英ガラス粉もしくは水晶粉 6 突起体 2 quartz glass flat plate 1A oxyhydrogen burner 1B electric arc burner 3 heating furnace 5 quartz glass powder or quartz powder 6 protrusion

フロントページの続き (56)参考文献 特開 平1−219030(JP,A) 特開 昭63−282133(JP,A) (58)調査した分野(Int.Cl.7,DB名) C03B 20/00 C03C 17/04 H01L 21/22 Continuation of front page (56) References JP-A-1-219030 (JP, A) JP-A-63-282133 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) C03B 20 / 00 C03C 17/04 H01L 21/22

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 石英ガラス体の少なくとも一面に突起体
を形成してなる石英ガラス物品において、高温加熱した
石英ガラス体上への石英ガラス粉もしくは水晶粉を供給
しながら加熱溶着せしめて前記石英ガラス体上へ突起体
を生成すると共に、該突起体と石英ガラス体との間のO
H差を、30ppm以下若しくは石英ガラス体のOH値
に対し±50%以内のいずれか多い方の値に収まるよう
にした事を特徴とする石英ガラス物品。
1. A quartz glass article having a projection formed on at least one surface of a quartz glass body, wherein the quartz glass article is heated and fused while supplying quartz glass powder or quartz powder onto the quartz glass body heated at a high temperature. A projection is formed on the body, and O between the projection and the quartz glass body is formed.
A quartz glass article characterized in that the H difference falls within 30 ppm or less or within ± 50% of the OH value of the quartz glass body, whichever is greater.
【請求項2】 少なくとも前記石英ガラス体に含有され
るOH基が50ppm以下の場合には電気アーク火炎を
用いて前記突起体を生成し、前記石英ガラス体に含有さ
れるOH基が100ppm以上の場合には酸水素火炎を
用いて前記突起体を生成する事を特徴とする請求項1記
載の石英ガラス物品。
2. When at least the OH group contained in the quartz glass body is 50 ppm or less, the projection is formed using an electric arc flame, and the OH group contained in the quartz glass body is 100 ppm or more. 2. The quartz glass article according to claim 1, wherein the projection is formed using an oxyhydrogen flame.
【請求項3】 前記石英ガラス物品が、半導体ウェーハ
熱処理用の縦型ボートの上蓋及び/又は底板であること
を特徴とする請求項1記載の石英ガラス物品。
3. The quartz glass article according to claim 1, wherein the quartz glass article is a top cover and / or a bottom plate of a vertical boat for heat treatment of a semiconductor wafer.
【請求項4】 石英ガラス体の少なくとも一面に突起体
を生成させる石英ガラス物品の製造方法において、回転
しながら加熱炉内に設置されている石英ガラス体を19
00℃以上の高温に加熱しつつ、その上面側に石英ガラ
ス粉もしくは水晶粉を供給しながら加熱融着せしめ肉盛
部を生成する工程と、前記肉盛部を機械加工により所定
形状に形成する工程とを具え、前記石英ガラス粉もしく
は水晶粉の加熱溶融手段を、前記石英ガラス体のOH含
有量に応じて酸水素火炎もしくは電気アーク火炎に選択
する事を特徴とする石英ガラス物品の製造方法。
4. A method for manufacturing a quartz glass article in which a projection is formed on at least one surface of a quartz glass body, wherein the quartz glass body installed in a heating furnace while rotating is rotated by 19%.
A step of heating and fusing while supplying quartz glass powder or quartz powder to the upper surface side while heating to a high temperature of 00 ° C. or more to form a built-up portion, and forming the built-up portion into a predetermined shape by machining. And a step of selecting the means for heating and melting the quartz glass powder or quartz powder to an oxyhydrogen flame or an electric arc flame according to the OH content of the quartz glass body. .
【請求項5】 前記石英ガラス体に含有されるOH基が
100ppm以上の領域では酸水素火炎を、50ppm
以上100ppm以下の領域においては酸水素火炎もし
くは電気アークのいずれかを、50ppm以下の領域で
は電気アーク火炎を選択する事を特徴とする請求項4記
載の石英ガラス物品の製造方法。
5. An oxyhydrogen flame in a region where the OH group contained in the quartz glass body is 100 ppm or more,
5. The method for producing a quartz glass article according to claim 4, wherein either an oxyhydrogen flame or an electric arc is selected in a region of not less than 100 ppm and an electric arc flame is selected in a region of not more than 50 ppm.
JP05291258A 1993-10-27 1993-10-27 Quartz glass article and method for producing the same Expired - Lifetime JP3114835B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05291258A JP3114835B2 (en) 1993-10-27 1993-10-27 Quartz glass article and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05291258A JP3114835B2 (en) 1993-10-27 1993-10-27 Quartz glass article and method for producing the same

Publications (2)

Publication Number Publication Date
JPH07126025A JPH07126025A (en) 1995-05-16
JP3114835B2 true JP3114835B2 (en) 2000-12-04

Family

ID=17766543

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3114835B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081290B2 (en) 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102669970A (en) * 2011-03-18 2012-09-19 朱盛菁 Method for manufacturing crystal furniture
JP5763508B2 (en) * 2011-11-25 2015-08-12 東ソー・クォーツ株式会社 Method and apparatus for manufacturing quartz glass cylinder material
JP5763510B2 (en) * 2011-11-29 2015-08-12 東ソー・クォーツ株式会社 Method and apparatus for manufacturing quartz glass cylinder material
CN114315107B (en) * 2022-01-21 2023-11-28 中天科技精密材料有限公司 Device and method for producing quartz glass

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081290B2 (en) 2002-04-04 2006-07-25 Tosoh Corporation Quartz glass thermal sprayed parts and method for producing the same

Also Published As

Publication number Publication date
JPH07126025A (en) 1995-05-16

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