JP3111874B2 - High frequency device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency device for receiving a digitally modulated high-frequency signal.

[0002]

2. Description of the Related Art In the above-mentioned conventional high-frequency device, the inductance of a tuning section of a voltage-controlled oscillator is constituted only by a strip line in order to improve vibration resistance.

[0003] That is, if the inductance is composed of, for example, a coil component, the coil component vibrates due to vibration, and the inductance value fluctuates. As a result, the tuning frequency shifts. Just made up.

[0004]

However, if the inductance of the tuning unit is constituted only by the strip line, tuning adjustment for correcting variations due to component constants and mounting positions of electronic components constituting the local oscillator before completion cannot be easily performed. There was a problem.

Therefore, the present invention secures the stability of the oscillation frequency over a long period of time, including vibration immunity, makes tuning adjustment easy, and supplies a clear output signal with little phase noise from a local oscillator to a mixer. The purpose is to be able to do.

[0006]

According to the present invention, there is provided an input terminal to which a digitally modulated high-frequency signal is input, and a signal input to the input terminal is supplied to one input. A mixer to which the output signal of the local oscillator is supplied to the other input, and an output terminal to which the output signal of the mixer is supplied, wherein the local oscillator comprises a voltage-controlled oscillator, and a voltage-controlled oscillator. A voltage divider, a phase comparator, and a loop filter interposed in a control loop of the voltage-controlled oscillator, the voltage-controlled oscillator includes an oscillation unit and a tuning unit, the tuning unit includes a frequency adjustment unit, and a frequency adjustment unit. Maintaining means for maintaining the state of adjustment,
The control loop has a sufficiently large high loop bandwidth that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator, and
The container should be stored in at least a metal case and
The inductance that forms part of the tuning section
Or near the metal partition plate provided in this case
And the inductance is based on reflow soldering.
This is connected to a chip capacitor mounted on the board, which ensures stability of the oscillation frequency over a long period of time, including vibration proofing, allows easy tuning adjustment, and allows the phase from the local oscillator to the mixer to be adjusted. The initial objective of providing a clear output signal with less noise can be achieved.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention provides an input terminal to which a digitally modulated high-frequency signal is input, and a signal input to this input terminal is supplied to one input. The other input includes a mixer to which an output signal of a local oscillator is supplied, and an output terminal to which an output signal of the mixer is supplied, wherein the local oscillator includes a voltage-controlled oscillator and a control of the voltage-controlled oscillator. A frequency divider including a frequency divider, a phase comparator, and a loop filter interposed in a loop, wherein the voltage-controlled oscillator has an oscillation unit and a tuning unit, the tuning unit includes a frequency adjustment unit, and an adjustment unit for adjusting the frequency adjustment unit. together and a maintaining means for maintaining a state, the control loop noise of the local oscillator, a sufficiently large high loop bandwidth as not being affected by the noise of said voltage controlled oscillator, the station Oscillator and the mixer at least
It is stored in a metal case and part of the tuning section
The inductance that forms
Provided in the vicinity of a metal partition plate provided in the
The inductance is attached to the board by reflow soldering
This is a high-frequency device to which a chip capacitor is connected . Therefore, with the above configuration, the frequency adjustment unit is provided as the tuning unit of the voltage controlled oscillator, so that tuning adjustment can be easily performed, and the adjustment state of the frequency adjustment unit is maintained by the maintenance means, so Etc. are sufficiently secured.
In this way, if the maintenance means is used to secure the stability of the oscillation frequency over a long period of time, including vibration resistance, a stray capacitance is formed because its dielectric constant is larger than that of air, and as a result, the dielectric constant of the stray capacitance is Oscillation characteristics deteriorate because loss occurs.However, in the present invention, the control loop of the voltage-controlled oscillator has a large loop bandwidth that is large enough that the noise of the local oscillator is not affected by the noise of the voltage-controlled oscillator. The correction can be performed in a wide frequency range, and as a result, the output signal output from the local oscillator to the mixer can be made clear with little phase noise. The local oscillator and mixer are housed in a metal case
And an inductance that forms part of the tuning section
To the case or a metal provided in the case.
Because it is provided near the partition plate, it is near the inductance
Metal case or partition plate with stable electric potential
Is not affected by external signals.
Thus, a stable oscillation frequency can be obtained. In addition,
The inductance is attached to the board by reflow soldering
Since a chip capacitor is connected, reflow soldering
Self-alignment with chip capacitors
The effect works, and the mounting position is fixed. Therefore,
Variations in the oscillation frequency of the voltage controlled oscillator are reduced.

According to a second aspect of the present invention, there is provided a frequency adjusting section,
2. The high-frequency device according to claim 1, comprising a conductive member provided in a movable state on the substrate, and fixed by a fixing member used as a maintaining means, wherein the conductive member provided in a movable state is fixed. Since it is fixed by the member, the adjustment value does not change due to vibration or aging.

According to a third aspect of the present invention, a pattern inductance line is used as an inductance element constituting a tuning unit, a movable conductor is planted near the pattern inductance line, and the movable conductor is moved and adjusted. 2. The high-frequency device according to claim 1, wherein said high-frequency device is fixed by a fixing member used as a maintenance means, wherein a part number and a number of assembling steps can be rationalized by partially patterning an inductance, while a tuning unit of a local oscillator is movable. Because it can be adjusted with conductors, even if the values of the components that make up the voltage controlled oscillator vary and the mounting position varies,
It can receive over all of the input signals. In addition, the movable conductor is adjusted so that its inductance does not change due to a change in its shape due to a long-term temperature cycle or the like, and the movable conductor is fixed with a fixing member serving as a maintenance means. Stable against fluctuations.

The high frequency device according to claim 3, wherein the movable conductor according to the present invention is provided substantially above the center of the width of the pattern inductance line and substantially parallel to the pattern inductance line. Since the degree of coupling is small, the adjustment range is narrow, and finer adjustment can be easily performed.

According to a fifth aspect of the present invention, there is provided the high-frequency device according to the third aspect, wherein the movable conductor is implanted near the open end of the pattern inductance line. An adjustment range is obtained.

According to a sixth aspect of the present invention, an air core coil or a flat plate line is implanted as an inductance element constituting a tuning unit, and the air core coil or the flat line is adjusted and used as a maintenance means. 2. The high-frequency device according to claim 1, wherein the voltage-controlled oscillator is a small-sized voltage controlled oscillator having a relatively low frequency because an air-core coil or a flat line is used as the inductance element. be able to.

According to a seventh aspect of the present invention, there is provided the high-frequency device according to the first aspect, comprising a conductor wound around the outer circumference of the core used as the maintaining means, wherein the coil is a conductive member. Is wound, so that even if an external force is applied to the coil, the coil is not deformed and the inductance value does not change.

According to another aspect of the present invention, there is provided an inductance element constituting a tuning portion, comprising: a cylindrical insulator; a conductor wound around the outer periphery of the insulator; and a concave screw provided in the insulator. The high-frequency device according to claim 1, wherein the convex screw fitted to the concave screw is constituted by a movable core provided on an outer periphery, and the inductance value can be changed by rotating the movable core. It is easy to automate the adjustment. Further, since the conductor is wound around the insulator, even if an external force is applied, the conductor is not deformed and the inductance value does not change. Furthermore, the movable core is also fixed to the insulator by the frictional force of the screw, and the adjusted position of the movable core does not change, so that the inductance value is maintained for a long time.

According to a ninth aspect of the present invention, a pattern inductance line and a movable conductor are connected in series as an inductance element constituting a tuning unit, and the movable conductor is adjusted and a fixed member used as a maintenance means is used. 2. The fixed high-frequency device according to claim 1, wherein the movable conductor provided in series with the pattern inductance line shares an inductance, so that the area occupied by the substrate can be reduced and the size can be reduced.

According to a tenth aspect of the present invention, a pattern inductance line is used as an inductance element constituting a tuning unit, and an adjustment unit provided on the pattern inductance line is trimmed and adjusted. 2. The high-frequency device according to claim 1, wherein the trimming adjustment of the pattern inductance line is a two-dimensional adjustment, and the adjustment can be easily automated. Further, since the trimming portion is covered with a coating material in order to prevent a chemical change due to water absorption, oxidation and the like, the adjustment value can be maintained for a long period of time.

According to an eleventh aspect of the present invention, in the high frequency device according to the tenth aspect, a movable conductor is connected in series with the pattern inductance line, and the movable conductor is adjusted and fixed by a fixing member used as a maintaining means. In addition, since there are trimming adjustment of the pattern inductance line, adjustment of the movable conductor, and two frequency adjustment units, the adjustment can be easily and accurately performed.

[0018] In the invention described in claim 1, a local oscillator, and a mixer as well as housed in a metal case, laid on a substrate constituting a part of the tuning section of said local oscillator pattern lever provided inductance line metal case or in the vicinity of the partition plate, a metal case having a stable potential in the vicinity of the pattern inductance line or have a partition plate is provided, the influence of the signal from the outside As a result, a stable oscillation frequency can be obtained.

According to a twelfth aspect of the present invention, in the high-frequency device according to the first aspect, a film capacitor is used as the capacitance of the loop filter. The piezoelectric effect is small, stable performance against vibration is obtained, and a high-performance voltage controlled oscillator is obtained.

According to a thirteenth aspect of the present invention, the film capacitor is mounted on the front surface of the substrate, the lead wire is inserted into a through hole provided in the substrate, and the conductor is soldered to the conductor pattern on the rear surface of the substrate. 13. The high-frequency device according to claim 12 , wherein the inside of the through-hole is a non-electrode forming portion, and the lead wire is penetrated even if the lead wire soldered on the back surface of the substrate is soldered. Since the through hole has no electrode formed, a non-heating distance greater than the substrate thickness is always obtained, and this non-heating distance makes it difficult for the molten solder to reach the attachment of the lead wire of the film capacitor. It is not destroyed by the heat of melting solder.

According to a fourteenth aspect of the present invention, the loop filter and the voltage controlled oscillator are partitioned by a partition plate, and the partition plate has an opening for passing a conductor pattern connecting the loop filter and the voltage controlled oscillator. 13. The high-frequency device according to claim 12 , wherein the film capacitor is mounted near the opening so as to cover the opening, wherein one of the electrodes of the film capacitor has a stable ground potential. Is shielded by a film capacitor, and the loop filter and the voltage controlled oscillator are electrically separated.

According to a fifteenth aspect of the present invention, there is provided the high-frequency device according to the first aspect, comprising a two-stage transistor.
An inexpensive and appropriate amplification degree can be obtained, and the band width of the loop filter can be widened.

According to a sixteenth aspect of the present invention, the movable conductor constituting the tuning unit, the varactor diode, and the pattern inductance line are sequentially connected in series, and the pattern inductance line side is connected to the oscillation unit side. In the high-frequency device according to 1, since a pattern inductance line having a fixed inductance is provided on the oscillation unit side, unstable coupling due to a high-frequency mode does not occur, and adjustment is easy. Also, since the varactor diode is provided between the movable conductor and the pattern inductance line, an appropriate oscillation frequency range can be obtained by the varactor diode and the movable conductor, and the tuning sensitivity value is not increased more than necessary. In addition, even if noise enters the loop filter, an increase in phase noise can be suppressed.

According to a seventeenth aspect of the present invention, a small-capacitance chip capacitor is mounted close to the pattern inductance line between a series connection of a varactor diode and a pattern inductance line constituting a tuning unit. Wherein the impedance of the line is increased by mounting the small-capacity chip capacitor. This is because even if the length of the lead wire of the varactor diode is substantially changed by soldering, the effect is reduced because the chip capacitor has a high impedance. That is, the varactor diode is heavier than the chip capacitor, cannot expect a self-alignment effect in reflow soldering, has a substantial variation in length including lead wires, and the impedance is not constant. On the other hand, since the chip capacitor is light in weight, a self-alignment effect works in reflow soldering, and the mounting position is fixed. Therefore, the inductance value of the pattern inductance line is constant. Although the inductance between the chip capacitor and the varactor diode may vary, the oscillation frequency of the voltage controlled oscillator is small because the chip capacitor has a high impedance.

The invention according to claim 18 is the first invention in which a first varactor diode and a inductance which constitute a tuning section are connected to each other.
Along with inserting a small-capacity chip capacitor, a second capacitor inserted between said varactor diode and oscillating section, said second capacitor and said first capacitor to claim 17 using the temperature correction capacitor The high-frequency device according to claim 1, wherein a more appropriate temperature correction characteristic is obtained by combining the respective temperature correction characteristics of the first capacitor, the second capacitor, and the two capacitors,
It becomes a voltage controlled oscillator that is stable with respect to temperature.

According to a nineteenth aspect of the present invention, in the high-frequency device according to the first aspect, a reference frequency divider to which a reference frequency signal is input is provided, and a dividing ratio of the reference frequency divider can be changed. Since a reference frequency divider that can be changed to an input to which a reference frequency signal is input is provided, the division ratio of the frequency divider of the control loop can be reduced while maintaining a high loop bandwidth, and the response speed is increased. And the intended tuning frequency range can be obtained.

The dividing ratio of reference frequency divider of the present invention of claim 20 is a high-frequency device according to claim 19 to reduce the higher the division ratio output frequency of the voltage controlled oscillator is higher, reference frequency Since the frequency division ratio of the frequency divider and the frequency division ratio of the frequency divider of the control loop are both controlled according to the output frequency of the voltage controlled oscillator, the frequency division ratio of the frequency divider must be governed by the output frequency. Responsiveness can be improved.

According to a twenty-first aspect of the present invention, a plurality of intermediate frequency tuning filters having roll-off characteristics and different bandwidths are provided in parallel between a mixer and an output terminal. 2. The high-frequency device according to claim 1, wherein the switching can be selectively performed based on a transmission rate of a signal input from the input terminal, wherein the intermediate frequency tuning roll is changed by a difference in a bandwidth of the high-frequency signal input from the input terminal. Since the off-filter can be selectively switched, signals having different transmission rates can be optimally received, and the circuit before the mixer can be shared.

The invention according to claim 22 is the high-frequency device according to claim 1, wherein a variable attenuator is provided between the input terminal and the mixer, and a control terminal for controlling the variable attenuator is provided. Since the amount of attenuation can be controlled by a signal from the control terminal, optimal control can be performed so as not to cause cross modulation of the mixer.

According to a twenty- third aspect of the present invention, an I / Q detector is connected to an output terminal via an intermediate frequency tuning surface acoustic wave filter, and a first output from which an I signal of the I / Q detector is output. A second terminal for outputting a Q signal of the I / Q detector.
And a second oscillator for supplying an oscillating frequency signal to the I / Q detector, a substrate of a surface acoustic wave resonator constituting a resonance section of the second oscillator, and the intermediate frequency tuned surface acoustic wave. A substrate of the same material is used as a substrate of the filter, and a frequency error detector for a signal output from the first output terminal and the second output terminal is provided, and a frequency division is performed based on the output of the error detector. 2. The high-frequency device according to claim 1, wherein the data of the oscillator is controlled by an addition / subtraction counter, and the center of the intermediate frequency and the oscillation frequency of the second oscillator are made substantially the same. Since the substrate material used for the wave resonator and the substrate material of the intermediate frequency tuned surface acoustic wave filter are the same, even if the frequency of the intermediate frequency tuned surface acoustic wave filter fluctuates due to a temperature change or the like,
Since the frequency of the second oscillator also fluctuates by the same frequency in the same direction as the fluctuation, the fluctuation is canceled as a whole, and it is as if there was no fluctuation.

Further, the frequency control data is controlled by the addition / subtraction counter by the frequency error detector so that the center frequency of the intermediate frequency output from the mixer becomes equal to the oscillation frequency of the second oscillator. The center frequency of the intermediate frequency and the center frequency of the intermediate frequency tuning surface acoustic wave filter become substantially the same. Therefore, the detection error can be eliminated, and an inexpensive substrate material can be used, so that the cost can be reduced.

The bandwidth of 3dB cutoff frequency of the intermediate frequency tuning surface acoustic wave filter of the present invention according to claim 24,
0% or more of the bandwidth equal to the symbol rate of the received signal +
24. The high-frequency device according to claim 23 , wherein the characteristic is within 5%. By realizing this characteristic, it also has a function of restoring the characteristic emphasized on the transmission side. Therefore, it is not necessary to add a special filter for restoring the characteristics emphasized on the transmission side.

According to a twenty-fifth aspect of the present invention, an input filter is inserted between an input terminal and a mixer, and the local oscillator has an oscillating frequency of a maximum frequency and a minimum frequency of a signal input to the input terminal. 2. The high-frequency device according to claim 1, wherein the input filter is a fixed filter that oscillates a frequency at which an intermediate frequency larger than one half of the difference between the frequencies is obtained, and the input filter passes frequencies from the minimum frequency to the maximum frequency. Since the local oscillator oscillates at a frequency at which an intermediate frequency that is greater than one half of the difference between the maximum frequency and the minimum frequency of the input signal is obtained, the image interference frequency is always the maximum reception frequency. The frequency becomes higher than the frequency. Further, as a filter connected to the input terminal, it is possible to use a fixed filter that passes from the minimum reception frequency to the maximum reception frequency. Therefore, even if an inexpensive fixed filter is used, it does not suffer from image disturbance and its configuration becomes very simple.

[0034] The invention according to claim 26, the output signal frequency of the mixer a frequency apparatus according to claim 25 which is substantially 612MHz, since setting the intermediate frequency to a free channel frequency of the received signal And there is no interference from the input terminal. Also, approximately 612 following the input terminal
MHz traps can also be inserted.

According to a twenty-seventh aspect of the present invention, an I / Q extracting means connected to an output terminal, a first output terminal connected to an I signal output of the I / Q extracting means, 2. A demodulator is connected to a second output terminal to which the Q signal output of the extraction means is connected, and the first and second output terminals, and the demodulator is mounted outside a metal cover. Wherein the integrated circuit portion of the demodulator is not surrounded by the cover, so that the heat dissipation is very good. Therefore, there is no malfunction such as runaway due to heat of the integrated circuit. Further, since sufficient heat radiation is possible, the degree of integration of the integrated circuit can be increased, and the size of the integrated circuit can be reduced. As a result, the size of the high-frequency device can be reduced.

According to a twenty-eighth aspect of the present invention, there is provided a substrate on which a demodulator composed of an integrated circuit is mounted on a front surface, a copper foil laid on a lower surface of the demodulator, and a copper foil provided on a rear surface of the substrate. 28. The high-frequency device according to claim 27 , wherein the foil is connected to the through-hole, and the copper foil on the lower surface of the integrated circuit and the copper foil on the back surface of the substrate are connected by the through-hole. The heat is transmitted to the lower surface copper foil through the heat.

According to a twenty- ninth aspect of the present invention, a hole is provided below the integrated circuit on a substrate on which a demodulator made of an integrated circuit is mounted, the hole being larger than the chip element inside the integrated circuit and smaller than the outer periphery of the integrated circuit. 28. The high-frequency device according to claim 27 , wherein the holes are smaller than the outer periphery of the integrated circuit, so that the integrated circuit can be easily mounted by a general chip mounter, and both the upper surface and the lower surface thereof are provided. The air comes into direct contact, and efficient heat radiation becomes possible.

According to a thirty-first aspect of the present invention, a plurality of strip-shaped resist non-formed portions are provided on a copper foil provided on the back surface of a substrate, and solder is fused to the resist non-formed portions in a convex shape. 29. The high-frequency device according to claim 28 , wherein the copper foil on the lower surface is convex by soldering, so that the contact area with air is increased, and heat radiation is further improved.

According to a thirty-first aspect of the present invention, an input filter is provided between an input terminal and a mixer, and an intermediate frequency tuning filter connected to an output terminal and an output of the intermediate frequency tuning filter are connected. I / Q extraction means;
A first output terminal to which the I signal output of the I / Q extraction means is connected, and a second output terminal to which the Q signal output of the I / Q extraction means are connected, are provided in the same shield case. 2. The high-frequency device according to claim 1, wherein an external disturbance such as a digital lock inside the high-frequency device is shielded by the shield case over a wide frequency band.

According to a thirty-second aspect , a mixer and an I / O
Between the oscillator used for the Q extraction means and at least one
32. The high-frequency device according to claim 31 , wherein at least one shield plate is provided, wherein spurious due to interference of the oscillator with a mixer can be reduced.

According to a thirty-third aspect of the present invention, the mixer and the
32. The high-frequency device according to claim 31 , wherein the oscillators used for the Q extracting means are arranged diagonally in the same shield case, and similarly, spurious due to interference of the oscillator with the mixer can be reduced. .

According to a thirty-fourth aspect of the present invention, an input terminal is provided on one longitudinal side of a substantially rectangular shield case, and an input filter and the mixer are arranged following the input terminal. 32. The high-frequency device according to claim 31 , wherein a filter and a local oscillator that supplies an oscillation frequency to the mixer are disposed substantially in parallel with the mixer with a partition plate interposed therebetween, wherein a digital signal for channel selection is shielded. Since it is arranged and partitioned in the vicinity of the vertical side surface on the input terminal side of the case, the digital signal for channel selection does not adversely affect other compartments.

According to a thirty-fifth aspect of the present invention, there is provided a high-frequency high-frequency apparatus according to the thirty-second aspect, wherein a compartment for mounting an intermediate frequency tuning filter is provided between a local oscillator for supplying an oscillating frequency to the mixer and the I / Q extracting means. In the device, since the mixer side and the I / Q detector side are separated, good I / Q without mutual interference
Detection is possible.

According to a thirty- sixth aspect of the present invention, a control terminal of a local oscillator is provided near a first lateral side plate of a shield case,
35. The high-frequency device according to claim 34, further comprising an output terminal of the Q extracting means, wherein each signal is arranged in the same direction on the substrate side, so that wiring is convenient.

According to a thirty-seventh aspect of the present invention, there is provided an input terminal to which a digitally modulated high-frequency signal is input, a signal input to this input terminal being supplied to one input, and a local oscillator being supplied to the other input. And an output terminal to which an output signal of the mixer is supplied. The local oscillator includes a voltage-controlled oscillator, and a frequency divider interposed in a control loop of the voltage-controlled oscillator. The voltage controlled oscillator has an oscillating unit and a tuning unit, and the control loop is configured such that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator. And a reference frequency signal supplied to the phase comparator has a substantially center with respect to a comparison signal supplied from the frequency divider to the comparator. Except for wavenumber portion, in the same frequency to reduce the signal level, the local oscillator
And the mixer is stored in at least a metal case
In both cases, the inductance forming a part of the tuning section is
The case or a metal part provided in the case.
Provided near the cutting plate, and the inductance
The chip capacitor mounted on the board is connected
And is a high-frequency devices. Therefore, according to the above configuration, since the frequency adjustment unit is provided as the tuning unit of the voltage controlled oscillator, tuning adjustment can be easily performed , and in the present invention, the control loop of the voltage controlled oscillator is changed to the local oscillator. The reference frequency signal supplied to the phase comparator is compared with the frequency divider except for its substantial center frequency part, while the high loop bandwidth is so large that the noise of the voltage controlled oscillator is not affected by the noise of the voltage controlled oscillator. The comparison signal supplied to the vessel is
Since the signal level is reduced at the same frequency, it can be corrected over a wide frequency range, and as a result, the output signal output from the local oscillator to the mixer is a clear one with less phase noise. It can be. Also, the local oscillator and mixer are housed in a metal case.
And an inductor that forms part of the tuning section.
To the case or the metal provided in the case.
Near the inductance plate.
Metal case or partition with stable electric potential nearby
Plate is provided, so it is not affected by external signals
Therefore, a stable oscillation frequency can be obtained. Furthermore,
The inductance is mounted on the board by reflow soldering.
Reflow half
Self-alignment of chip capacitors
Effect works, and the mounting position is fixed. Accordingly
Therefore, variation in the oscillation frequency of the voltage controlled oscillator is reduced.
You.

According to a thirty- eighth aspect of the present invention, there is provided an input terminal to which a digitally modulated high-frequency signal is input, a signal input to this input terminal being supplied to one input, and a local oscillator being supplied to the other input. And an output terminal to which an output signal of the mixer is supplied. The local oscillator includes a voltage-controlled oscillator, and a frequency divider interposed in a control loop of the voltage-controlled oscillator. The voltage controlled oscillator has an oscillating unit and a tuning unit, and the control loop is configured such that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator. And the signal level near the center frequency of the reference frequency signal supplied to the phase comparator is output from the local oscillator to the mixer. In comparison with the frequency distribution characteristic of the signal level near the center frequency, the signal level at the same offset frequency from the center frequency, except for the substantial center frequency portion of the frequency distribution characteristic, is determined by the high loop hand width. The local oscillator and the mixer are at least made of metal
And form part of the tuning section
Inductance in the case or in this case
Provided in the vicinity of the provided metal partition plate,
The chip mounted on the board by reflow soldering
This is a high frequency device to which a capacitor is connected . Therefore, if the above configuration, is easily tuned adjusted so it is provided a frequency adjustment unit as tuning section of voltage controlled oscillator row
In the present invention, the control loop of the voltage controlled oscillator is
The high loop bandwidth is so large that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator, and the reference frequency signal supplied to the phase comparator is based on the frequency distribution characteristics of the signal level output from the local oscillator to the mixer. In the comparison, the signal level at the same offset frequency from the center frequency, except for the substantial center frequency portion of the frequency distribution characteristic, was lower than the signal level to be reduced by the high loop bandwidth. The noise of the frequency signal does not impair the noise reduction effect of the local oscillator due to the high loop bandwidth, and can be effectively corrected with a high loop bandwidth over a wide frequency width in practical use. As a result, the local oscillator can be realized economically, and the output signal to be output can be made clear with little phase noise. Also, a local oscillator
The mixer is housed in a metal case and
The inductance that forms part of the case or this
It is provided near the metal partition plate provided in the case.
Therefore, it has a stable potential near the inductance
A metal case or partition plate is provided for
Stable oscillation frequency because it is not affected by the signal from
Can be obtained. In addition, the inductance
-Connects chip capacitors mounted on the board by soldering
Is used in reflow soldering.
Self-alignment effect is-out work in the capacitor, the mounting position
Position is constant. Therefore, the oscillation cycle of the voltage controlled oscillator
Wave number variations are reduced.

Embodiment 1 Hereinafter, Embodiment 1 of the present invention will be described. In FIG. 1, in the high-frequency device of the present invention, an input terminal 101 to which a high-frequency digital signal is input, an input circuit 102 connected to the input terminal 101, and an output of the input circuit 102 are supplied to one input. A mixer 104 to which the output of the first oscillator 103 which is a local oscillator is connected to the other input, a filter 105 to which the output of the mixer 104 is connected, and an I to which the output of the filter 105 is connected / Q detector 106 and I / Q detector 106
A first output terminal 107 for outputting a signal;
A second output terminal 108 from which a Q signal of the detector is output,
A second oscillator 109 to which an oscillation frequency signal is supplied to the I / Q detector 106, an AFC control terminal 110 for controlling the oscillation frequency of the second oscillator 109, and an output of the first oscillator 103 are connected. (A frequency divider and a phase comparator) 111 and a loop filter (hereinafter referred to as a low-pass filter) 112 connected between the PLL unit 111 and an input of the first oscillator 103. ing. Here, the first oscillator 103 includes the low-pass filter 11
2 is connected to an input of an amplifier 128 forming an oscillation section via a strip line (used as an example of a pattern inductance line) 115 laid on the substrate 115A. Filter 112
The connection point of the strip line 115 is connected to the ground via a variable capacitance diode 126. The output of the amplifier 128 is the output of the first oscillator 103. The entire back surface of the substrate 115A is ground pattern 1
15B. A movable conductor 119 constituting a frequency adjuster is implanted in the vicinity of the strip line 115, and the movable conductor 119 is movably adjusted and fixed with an adhesive 120 (used as an example of a maintaining unit). I have. In the PLL section 111, the output of the oscillator 103 is connected to the frequency divider 118. The output of the frequency divider 118 is connected to one of the phase comparators 113.
The output of the phase comparator 113 is connected to the low-pass filter 112. The reference oscillator 116 is a reference frequency divider 1
The output of the reference frequency divider 117 is connected to the other input of the phase comparator 113. The frequency divider 118 and the reference frequency divider 117 are both connected to a control input terminal 114, and the frequency division ratio can be varied by a signal from the control input terminal 114. Here, by setting the reference frequency input to the phase comparator 113 to be high, the frequency variable step amount becomes coarse. Therefore, in order to finely set the frequency variable step amount, the frequency divider 118 is provided with a frequency dividing ratio. Uses a switchable modulus-type frequency divider.

The operation of the high-frequency device configured as described above will be described below. A high-frequency digital signal is input to an input terminal 101, and this signal is
02 to the mixer 104. Here, the first
And an intermediate frequency signal is obtained by mixing with the oscillation frequency output from the oscillator 103. The intermediate frequency signal is passed through a filter 105 and multiplied by a signal of a second oscillator 109 by an I / Q detector 106 to obtain an I signal and a Q signal. The oscillation frequency of the second oscillator 109 is controlled by the AFC control terminal 110.

In the first oscillator 103, the variable capacitance diode 126 forms a capacitance component of the variable tuning circuit,
The oscillation frequency of the first oscillator 103 is controlled by changing the capacitance value of the variable capacitance diode 126 by the control voltage from the low-pass filter 112. The oscillation frequency is 1430 ~
An oscillation frequency range of 2530 MHz must be oscillated. In order to realize this, an adjustment is made to absorb variations due to component constants and mounting states of electronic components constituting the tuning circuit (hereinafter, simply referred to as variations), so that the entire range of the input signal input from the input terminal 101 is adjusted. So that you can cover it. Also, since the patterned strip line 115 is used for the inductance, no inductance component is required for that portion, and the ratio can be rationalized including the number of assembly steps.

Next, adjustment of the tuning circuit that absorbs this variation will be described. By moving the movable conductor 119 closer to or farther from the stripline 115, the equivalent inductance value of the stripline 115 changes. The tuning frequency of the variable tuning circuit of the oscillator 103 can be adjusted by changing the inductance value. That is, the inductance value is adjusted to an optimal value by changing the inductance value in order to absorb a variation in component constants constituting the oscillator 103 and a variation in stray capacitance caused by a variation in the mounting position of the mounted component. It is.

On the other hand, it is necessary to prevent the shape of the movable conductor 119 from changing due to vibration, a long-term temperature cycle, or the like so that the inductance value does not change. For this purpose, adjustments are made to absorb variations and the movable conductor 1
19 is coated with an adhesive 120 and fixed. In this way, stability against long-term shape fluctuation is achieved.

However, the adhesive 120 causes a stray capacitance to increase due to a relative dielectric constant larger than that of air, causing more dielectric loss, and thus lowers the Q of the tuning circuit of the oscillator 103. This means that the phase noise of the oscillator 103 increases. Increasing phase noise is a major issue in high-frequency devices. Therefore, it is necessary to reduce the phase noise to such an extent that a bit error rate does not occur in digital signal reception. To solve this, it is necessary to reduce the phase noise with a high loop bandwidth. In the conventional analog-modulated high-frequency signal reception, the loop bandwidth is about 60 Hz. However, in the present embodiment for receiving a digitally-modulated high-frequency signal, the loop bandwidth is set to about 7 kHz to reduce phase noise. 40dB
Improved to some degree. Note that the phase comparison frequency in this case was about 3 kHz in the past, whereas in the present embodiment, it was about 36 kHz.
It was set to 0 kHz. In addition, the loop bandwidth is set to approximately 10 kHz.
In this case, the phase comparison frequency is approximately 500
kHz.

FIG. 2A is a perspective view showing details of the first oscillator 103 of FIG. FIG. 2B is a side view of the vicinity of the movable conductor 119 viewed from the AA direction. In FIG. 2, the movable conductor 119 has two inverted L-shaped legs 119.
a and a main body 119b connecting the legs. Main body 11 electromagnetically coupled to stripline 115
9b is disposed on the open end 115a or 115b side of the strip line 115, and the main body 119b is disposed substantially above the center of the width of the strip line 115 and substantially parallel to the strip line 115. With this arrangement, 100
An adjustment range of the oscillation frequency of about MHz is obtained. That is, the main body 119b is provided on the side of the open end 115a or 115b.
, A relatively large oscillation frequency adjustment range is obtained. The adhesive 120 is applied so that the mutual position of the movable conductor 119 and the strip line 115 does not change. This stabilizes against fluctuations such as long-term temperature cycles. In this embodiment, a solvent-type rubber-based adhesive is used as the adhesive 120. Others
Silicon-based, epoxy-based, phenol-based or the like may be used. In that case, a material that cures at room temperature is desirable in order to enhance workability.

The oscillation frequency adjustment range is 30 MHz.
In the case of a narrow width, the center 1
The movable conductor 119 may be implanted in 15c. In this case, there is an effect that the adjustment range is narrow but the adjustment is easy.

FIG. 3A is a perspective view of another example showing details of the first oscillator 103 of FIG. FIG. 3 (b)
FIG. 4 is a side view of the vicinity of the movable conductor 149 as viewed from the AA direction. In FIG. 3, the movable conductor 149 has an inverted L-shape.
Book leg 149a and a body 149b connecting the legs
It is composed of A main body 149b that is electromagnetically coupled to the strip line 150 provided on the substrate 150A is disposed on the open end 150a or 150b side of the strip line 150. 150 are arranged substantially in parallel. With such an arrangement, an oscillation frequency adjustment range of about 80 MHz can be obtained. That is, the open end 15
Since the main body 149b is arranged on the 0a or 150b side, a relatively large oscillation frequency adjustment range is obtained. Further, the strip line 150 is formed in an L-shape continuously. Thus, the mounting area on the substrate 150A can be reduced. This has the same effect even if it is S-shaped.

In the case where the adjustment range of the oscillation frequency is as narrow as about 20 MHz, the center 150 c
The movable conductor 149 may be implanted at the bottom. In this case, there is an effect that adjustment is easy because the adjustment range is narrow.

Also in this example, the adhesive 120 is applied so that the relative position between the movable conductor 149 and the strip line does not change, as in the above-described example. Substrate 1
The entire back surface of 50A is a ground pattern 150B.

(Embodiment 2) In the case where the strip line 115 or 150 is not suitable for use as an inductance element due to a large size such as when the oscillation frequency is low, for example, when oscillating a frequency in the VHF band, the inductance element is used. The tuning part may be formed using an air-core coil or a flat plate line. For variations in the oscillation frequency, the inductance value is adjusted by changing the shapes of the air core coil and the flat line. Then, the air-core coil or the flat-plate line is fixed with an adhesive in the same manner as in the above-described embodiment so as to be stable against fluctuations such as a long-term temperature cycle.

Embodiment 2 is shown in FIG. 4 and FIG. FIG. 4 shows the strip line 1 shown in FIG. 1, FIG. 2 or FIG.
15, 150, movable conductors 119, 149 and adhesive 1
This is an example in which 20 is replaced with an inductance element 121. FIG. 5A shows an example of the inductance element 121. This inductance element 121 has electrodes 1 at both ends.
24 with the insulator 122 as a core.
2 has a configuration in which a coil 123 is wound. The value of the inductance element 121 is the groove 1 on the side opposite to the electrode 124.
22a is formed, tweezers or the like are inserted into the groove 122a, and adjustment is performed by changing the winding pitch of the coil 123. Coil 123 of inductance element 121
Is wound around the insulator 122, the insulator 12
Even if there is no adhesive due to the frictional force with 2, the device is stable against fluctuations such as a long-term temperature cycle. That is, in this example, the frictional force between the coil 123 and the insulator 122 serves as the maintaining means. Further, even if an external force is applied to the coil 123, the shape does not change. However, because of the dielectric loss of the insulator 122, the phase noise generated by the oscillator 103a is reduced by increasing the loop bandwidth, as in the previous embodiment. As a result, the phase comparison frequency of the phase comparator 113 also increases.

Regarding the point that the frequency interval of the reception frequency becomes large as a result of the increase of the phase comparison frequency, the coarse adjustment of the reception frequency is performed by the PLL unit 111 and the first oscillator 103a, and the fine adjustment is performed by the I / Q detector 106. By using the AFC control terminal 110 of the second oscillator 109, a stable high-frequency device can be realized.

FIG. 5B shows another example of the inductance element 121 shown in FIG. In FIG. 5B, 17
Reference numeral 1 denotes a cylindrical insulator, and a concave screw 172 is provided on a wall of a through hole 171A at the center of the insulator 171. In this case, the bottom surface of the through hole 171A may be sealed to secure the strength. A conductor 173 is wound around the outer periphery of the insulator 171. The outer periphery has a cylindrical shape, but is not limited thereto. Reference numeral 174 denotes a movable core formed of a magnetic material, and a convex screw 175 is provided on the outer periphery of the movable core.
72 is provided. Reference numeral 176 denotes a minus-shaped groove provided on the top surface of the movable core 174. The movable core 174 moves a small distance up and down in the insulator 171 in the drawing by inserting a screwdriver or the like into the groove 176 and turning it. It can be performed. 177 is a metal shield case, which covers the outside of the insulator 171. Reference numeral 178 denotes a hole provided on the top surface of the shield case 177, through which the movable core 174 can be rotated from the outside. A groove 179 is provided on the outer peripheral surface of the insulator 171a, and the conductor 173 is formed in the groove 179.
Can also be wound.

The inductance value is adjusted by rotating the movable core 174. In this case, since the conductor 173 is wound around the insulator 171,
It is not deformed by external force. The movable core 17
4 is fitted to the insulator 171 with a screw and is locked by the frictional force (the frictional force is a maintenance means). The position of 174 can be maintained. This configuration is characterized in that the inductance value is adjusted by the rotating motion, so that it is easy to automate. Further, as shown in FIG. 5C, by providing a groove 179 on the outer periphery of the insulator and winding the conductor 173 around the groove 179, the inductance can be further stabilized against vibration.

However, as a result of the dielectric loss of the insulator 171 and the magnetic loss of the movable core 174, the oscillation characteristic of the tuning section deteriorates. The generated phase noise is reduced. As a result, the phase comparison frequency of the phase comparator 113 also increases.

As for the point that the frequency interval of the reception frequency becomes large as a result of the increase of the phase comparison frequency, the coarse adjustment of the reception frequency is performed by the PLL unit 111 and the first oscillator 103a, and the fine adjustment is performed by the I / Q detector 106. By using the AFC control terminal 110 of the second oscillator 109, a stable high-frequency device can be realized.

Third Embodiment A third embodiment is shown in FIGS. FIG. 7 is a diagram showing the first oscillator 103b of FIG. FIG. 7A schematically shows the first oscillator 103b, and FIG.
FIG. 4 is a side view of the vicinity of a movable conductor 125 viewed from a direction. The inductance element is connected to the movable conductor 125 and the strip line 1.
By adjusting the movable conductor 125, variations in the components constituting the first oscillator 103b are absorbed by adjusting the movable conductor 125. Then, they are similarly fixed with the adhesive 120, and are stabilized against changes in vibration, temperature cycle, and the like. In this case, since the movable conductor 125 is arranged in series with the strip line 151, it is not necessary to newly implant a movable conductor near the strip line 151 as compared with the embodiment of FIG. 151
The area occupied by A can be reduced, which is effective for miniaturization.

The movable conductor 125 may have the shape of the movable conductor 125a shown in FIG. 7 (c). That is, the movable conductor 125a may be fixed to the upper surface of the substrate 151A without being penetrated by the substrate 151A, and the approximate center may be fixed by the adhesive 120.

(Embodiment 4) Embodiment 4 is shown in FIG. FIG. 8A is a perspective view showing another example of the first oscillator, and is denoted by 103c in this example. FIG. 8B is a sectional view of the main part. Also,
FIG. 8C is a perspective view of a main part, and FIG. 8D is a perspective view of another example.

In FIG. 8A, reference numeral 152 denotes a strip line constituting the inductance of the tuning section. A convex portion 153 for adjustment is provided on a side surface of the strip line 152. The convex portion 153 is the strip line 15
FIG. 8 is for adjusting the inductance value of FIG.
As shown in (c), the inductance is adjusted to a predetermined value by cutting by laser trimming. A coating material 155 is applied to the cut surface 154. This covering material 15
The application of No. 5 is for the following reason. First, convex part 1
Protect 53 cut surface 154 from oxidation. Next, carbonization of the resist (not shown) printed on the adjustment protrusion 153 including the strip line 152 by laser trimming,
Alternatively, the object is to prevent a change in the dielectric constant of the substrate due to the absorption of moisture of a carbide that has resulted from carbonization by laser trimming when a phenolic thermosetting resin substrate 152A is used. The use of the coating material 155 maintains the adjusted inductance value. However, when such a coating material 155 is used, the Q of the tuning section is reduced due to the dielectric loss of the coating material 155. Therefore, by increasing the loop bandwidth of the control loop, the phase noise generated in the oscillator 103c can be reduced. I have.

Note that the adjusting section is, as shown in FIG.
Strip line 156 is concave 157 by laser trimming
You may cut into. Since the cut surface 154 formed by the laser trimming forms a rough surface 158 as shown in FIG.

(Fifth Embodiment) In a fifth embodiment, as shown in FIG.
Is shown. FIG. 9 is a perspective view thereof. In FIG. 9, reference numeral 159 denotes a strip line provided on the substrate 159A and forming a tuning section of the local oscillator.
Reference numeral 160 denotes a movable conductor connected in series to the strip line 159. 161 is the strip line 1
The adjusting portion is provided on the side surface of the adjusting member 59. 159B is a ground pattern.

In the tuning unit configured as described above,
Hereinafter, the adjustment method will be described. First, as shown in FIG. 9C, the adjusting unit 161 performs laser trimming.
It is roughly cut 162 and the inductance is roughly adjusted. Next, fine adjustment of the inductance is performed by the movable conductor 160. After the adjustment, the adjusting unit 161 applies the coating material 155 so that the cut surface is not oxidized, and the carbide generated by the carbonization of the substrate and the resist does not absorb water. The adhesive 120 is applied to the movable conductor 160 so that the adjustment value does not change.

As described above, in the fifth embodiment, since the coarse adjustment by the adjusting section 161 and the fine adjustment by the movable conductor 160 are performed, the adjustment can be easily performed and the accurate adjustment can be performed.

In the fourth and fifth embodiments, the trimming has been described for the laser. However, the trimming may be performed by machining such as a drill. In that case, capital investment can be rationalized.

(Embodiment 6) In FIG. 10, reference numeral 201 denotes an input terminal to which a digitally modulated high-frequency signal is input. This input terminal 201 has a high-pass filter 20
2. Amplifier 203A, variable attenuator 204, amplifier 203
B, the tuning filter 205 is connected, and the output of the tuning filter 205 is supplied to one input of the mixer 206. The other input of the mixer 206 is a local oscillator 20
7, an output signal from the voltage-controlled oscillator 208 is supplied.
The output of the mixer 206 is supplied to the amplifier 210 via the output terminal 209 of the mixer 206. The divider 211, the phase comparator 212, and the loop filter 213 are connected to the output side of the voltage controlled oscillator 208 of the local oscillator 207, and the output of the loop filter 213 is supplied to the input of the voltage controlled oscillator 208 and the tuning filter 205. It has become.
Further, a signal from the crystal oscillator 214 is frequency-divided by the frequency divider 215 and then supplied to the phase comparator 212 as a reference signal. That partition plate 2 shown in dashed line
A tuner section is constituted by blocks A, B, C, D, and E partitioned by 16, and an output terminal 217 as a tuner is provided in the block E. Inside the block E, the amplifier 210 and the intermediate frequency tuning filter 21 are provided.
8, an amplifier 219, a variable attenuator 220, and an amplifier 221 are provided. Block F is an I / Q detection unit. An I / Q detection unit 222 is connected to an output terminal 217 of the tuner unit. The I / Q detection unit 222 outputs an I signal to an output terminal 223 and a Q signal. The output terminal 224 to be output is drawn out. A voltage control oscillator 225 is connected to the I / Q detection unit 222, to which a frequency control voltage (AFC) is supplied. On the other hand, the block G is provided with a gain control circuit (AGC) 226 for supplying a control voltage to the tuner portion, and an AGC signal is supplied to the gain control circuit (AGC). A voltage is supplied to an outdoor antenna portion via an input terminal 201 to a low noise converter (LNB) provided outdoors. As described above, for example, 1 to 2 GHz is input from the input terminal 201 used as the voltage supply terminal.
That is, a signal in the z band is input.

In this embodiment, the voltage controlled oscillator 2
08 has a desired center frequency I (for example, 1.8 GHz) as shown by an H line in FIG.
5 shows distribution characteristics in a state of being largely shifted vertically. Correcting it like the frequency distribution characteristic of the J-line is performed by connecting to the frequency divider 211, the phase comparator 212, the control loop including the loop filter 213 connected to the voltage controlled oscillator 208, and the phase comparator 212. The divided frequency divider 215 and the quartz oscillator 214.

First, in this embodiment, the frequency division ratio of the frequency divider 211 is reduced (for example, about 4000 to 7000) in order to enhance the response characteristics. On the other hand, the reference signal supplied from the frequency divider 215 to the phase comparator 212 is high (for example, 360 kHz). The noise component of the voltage-controlled oscillator 208 alone is removed by the control loop, thereby obtaining a desired frequency distribution characteristic with a small noise component as shown by the J line in FIG.

Here, the effect of the loop bandwidth will be described with reference to FIG. In this case, if the loop bandwidth of the control loop is narrow, the frequency distribution characteristic H line of the voltage-controlled oscillator 208 alone is not corrected in the tail portion like the K line in FIG. Will be. That is, FIG.
, L indicates a case where the loop bandwidth of the control loop is small, and is, for example, 5 kHz. In this case, the upper and lower frequencies can be corrected from the center frequency I to 5 kHz, but beyond that, the H line remains, indicating that no correction is possible. On the other hand, M indicates a case where the loop bandwidth of the control loop is large. For example, if M is 7 kHz, upper and lower frequencies from the center frequency I to 7 kHz can be corrected, and as a result, the K line region can be extremely focused on the center frequency I like the J line. As a result, the noise area is reduced to M compared to the noise area at L.

Therefore, in the present invention, the loop bandwidth of the control loop is made sufficiently large so as not to be influenced by the noise of the voltage controlled oscillator 208.
M in (a) is set to about 7 kHz.
An ideal output signal is obtained which is extremely focused on the center frequency I like a line, and which is not affected even if the noise of the voltage controlled oscillator 208 is large. And this is the mixer 20
6 and tuning and I
The / Q detection will be performed appropriately. In addition, frequency divider 2
Since the frequency division ratio of 11 is reduced, responsiveness such as channel switching becomes extremely high.

Further, the effect of the reference frequency signal on the phase noise will be described with reference to FIG. Phase comparator 2
12 at the same frequency, except for its substantial center frequency, of the reference frequency signal supplied to the voltage controlled oscillator 2 before being corrected for the loop bandwidth.
08 (that is, from the frequency divider 211 to the phase comparator 21).
12 is output from the local oscillator 207 to the mixer 206, which is larger than the level of the comparison signal supplied to the reference signal 2 (N line in FIG. 12B) or the frequency distribution characteristic of the signal level near the center frequency of the reference frequency signal. In comparison with the frequency distribution characteristic of the signal level near the center frequency, the signal level at the same offset frequency from the center frequency excluding the substantial center frequency of the frequency distribution characteristic is higher than that at a high loop bandwidth. If the signal level is larger than the signal level to be corrected (O line in FIG. 12 (b)), even if the loop bandwidth is increased, the correction cannot exceed the reference frequency signal because the reference frequency signal to be compared has much noise (for example, 12 (b), the oblique line of the P line with respect to the O line, whereas the former N line cannot be corrected at all.

On the contrary, the purity of the signal of the voltage controlled oscillator 208 before being corrected at least by the loop bandwidth is better,
If the oscillation source of the reference frequency signal is selected so as not to impair the correction effect of the high loop bandwidth (for example, FIG.
(B) Q line), the effect of correcting the high loop bandwidth can be more economically enjoyed.

In FIG. 10, reference numeral 227 denotes a controller for switching channels and the like, and its signal is supplied to the frequency dividers 211 and 215 via the microcomputer 228.

FIG. 13 shows details of the blocks C and D. The voltage controlled oscillator 208 is composed of an oscillating section centered on a transistor 229 and a tuning section including a strip line 230 provided on a substrate and varactor diodes 231 and 231a. FIG. 14A shows this clearly. In FIG. 14A,
232, 233 and 234 are voltage application resistors;
36 and 237 are bias resistors; 238 and 239 are temperature correction capacitors; 240 is a feedback capacitor;
1, 242, 243 are grounding capacitors;
Is an output capacitor. 245 is an inductance for impedance matching, which is formed in a pattern on the substrate. Reference numeral 261 denotes a movable conductor for adjusting the inductance of the tuning unit, which is described in detail in the third or fifth embodiment. An adhesive 262 fixes the movable conductor 261 to keep the inductance stable over a long period of time.

Returning again to FIG. 13, loop filter 2
13 is a capacitor 246, 247, transistor 24
8, 249, etc., the details of which are shown in FIG.
Is shown in That is, the signal from the phase comparator 212 is input from the input terminal 250 and
The signal is amplified by an amplifier configured in a Darlington connection of 8,249 and then goes to an output terminal 251. Some of them are resistors 2
52, the signal is fed back to the transistor 248 via the capacitor 247, thereby performing a filtering operation.

In FIG. 15, reference numeral 253 denotes a capacitor,
55, 256 and 257 are resistors. Capacitor 24
A film capacitor was used as 6,247 in consideration of vibration resistance. That is, when a ceramic capacitor is used as these capacitors, unnecessary voltage is generated due to a piezoelectric effect due to vibration, which becomes noise and deteriorates phase noise. Therefore, such a leaded film capacitor having a small piezoelectric effect is used. Also,
Since the capacitor 246 in FIG. 13 is a film capacitor, it becomes quite large. Therefore, utilizing this fact, the capacitor 246 and the strip line 230 are used.
The opening provided in the partition plate 216 between the blocks C and D through which the line 258 connecting the two passes passes on the block D side, and the area near the opening is covered with the capacitor 246. This is a measure for minimizing the movement of noise of the blocks C and D through this opening.

The capacitors 246 and 247 made of film capacitors are not easily affected by high temperatures. Therefore, the mounting of these capacitors 246 and 247 on a board is performed after inserting the lead wires into the through holes of the board. Although the conductor pattern is soldered on the back side of the substrate, it is important that no electrode is provided in the through hole. This is to prevent the solder from penetrating into the through-hole and easily transferring the heat to the capacitors 246 and 247. The metal case 25 shown in FIG.
9 Strip line 23 near the wall or partition plate 216
The reason why 0 is provided is to reduce noise from entering the strip line 230. In the following FIG. 13, a transistor 260 is for signal amplification.

In FIG. 14A, the strip line 2
A small-capacity (several picofarats to several tens of picofarats) chip capacitor 238 is mounted between the varactor diode 30 and the varactor diode 231a to increase the line impedance. This is shown in FIG. 16 (a) and FIG.
As shown in (b), even if the length of the varactor diode 231a lead wire or the like is substantially changed by soldering or the like, the impedance is increased by the chip capacitor 238 to reduce the influence. That is, the varactor diode 231a is heavier than the chip capacitor 238, and cannot expect a self-alignment effect in reflow soldering. Therefore, the substantial length of the lead wire varies and the impedance is not constant.
On the other hand, since the chip capacitor 238 is light in weight, a self-alignment effect works in reflow soldering, and the mounting position is fixed. Therefore, the inductance of the strip line 230 is constant. The inductance between the chip capacitor 238 and the varactor diode 231a may vary, but since the chip capacitor 238 has a high impedance, variation of the oscillation frequency is reduced by this measure.

Further, as shown in FIG. 14A, the chip capacitor 2
By using both the temperature correction capacitors 39, more detailed temperature correction characteristics can be realized, and a voltage controlled oscillator stable with respect to temperature can be obtained.

FIG. 14B shows an embodiment in which a chip capacitor 238 for reducing variations around the strip line 230 in FIG. 14A is not required and a good tuning section can be obtained. In FIG. 14B, an oscillation frequency control voltage input terminal 263 is connected to a resistor 23.
2 and connected to the cathode side of the varactor diode 231 while the anode side is connected to the ground. The resistor 232 and the varactor diode 23
1 and the transistor 229 of the oscillation unit,
The movable conductor 261, the varactor diode 231a, and the strip line 230 are connected in series in this order, and the strip line 230 is connected to the transistor 229 side.
Side is connected. Here, the movable conductor 261 is 6 nH
The strip line 230 is formed in a printed pattern having a length of about 4 to 6 mm and a width of about 1 mm.

Now, let us consider a case where both the movable conductor 261 and the strip line 230 are disposed between the cathode sides of the varactor diodes 231 and 231a. Since the floating capacitance of both the movable conductor 261 and the strip line 230 is provided between the varactor diode 231 and the varactor diode 231a, compared to a case where both cathode sides of the varactor diode 231 and the varactor diode 231a are simply connected,
The tuning frequency range increases in proportion to the stray capacitance. In this case, it is needless to say that the tuning frequency range needs to be widened to a desired range. However, if the tuning frequency range is further expanded, the tuning sensitivity (the degree of change in the tuning frequency with respect to the change in the capacitance of the varactor diode 231a) increases. Therefore, when noise jumps into the loop filter 213, the voltage generated by the noise changes the frequency of the voltage-connected oscillator more greatly, so that there is a problem that phase noise increases. Therefore, the same as varactor diode 231
The stray capacitance during 31a has an optimum value. On the other hand, in order to obtain the optimum value, the movable conductor 261 and the strip line 2
If the stray capacitance value of each of the 30 is to be reduced, the surface area of each of them becomes small. As a result, the loss increases due to the skin effect, the resistance increases, the Q value decreases, and the phase noise deteriorates. Therefore, it is necessary to ensure that the value of the stray capacitance is equal to or more than a certain value. Therefore, there is a limit in lowering the tuning sensitivity.

After all, the varactor diodes 231 and 231
In order to secure the optimum value of the floating capacitance between
It can be seen that it is necessary to transfer any one of the strip line 61 and the strip line 230 between the varactor diode 231a and the transistor 229 of the oscillation unit. In this case, it is important to move the strip line 230 instead of the movable conductor 261. That is, according to this configuration, since the strip line 230 having a fixed inductance is provided on the transistor 229 side of the oscillation unit, unstable coupling due to the harmonic mode does not occur, and the adjustment is easy. If the movable conductor 261 is provided on the transistor 229 side, the movable conductor 261 and the transistor 229 are close to each other.
Unstable coupling due to the harmonic mode occurs, and stable oscillation cannot be obtained.

Returning to the above example, if the varactor diode 231a having a variable capacitance of about 1 pF to 15 pF, the strip line 230, and the movable conductor 261 for adjustment are present, only the movable conductor 261 is used. If it is arranged between both the cathode sides of the varactor diode 231 and the varactor diode 231a, the tuning sensitivity can be further reduced within a range where the proper tuning can be ensured (the oscillation frequency range of 1330 MHz to 2700 MHz). In this case, since the varactor diode 231a is arranged between the movable conductor 261 and the strip line 230 with minimum elements without dividing, the mounting efficiency is good, and the balance between securing the tuning of the input signal and reducing the phase noise is balanced. I have.

Next, a description will be given of how to increase the loop bandwidth. In FIG. 10, the comparison frequency is increased by reducing the frequency division ratio of the frequency divider 215 that divides the signal from the crystal resonator 214, and the high loop bandwidth can be achieved by decreasing the frequency division ratio. . However, the channel selection step becomes coarse, and the deviation of channel selection of the reception channel increases. Therefore, by varying the frequency division ratio of the frequency divider 215 by about 10 to 20% depending on the channel, the deviation can be corrected so as to minimize the deviation, and a high loop bandwidth can be realized while securing the desired tuning. it can.

That is, the local oscillation frequency is set to F _vco , 64
The main counter of 2 moduli type of / 65 division is N, the swallow counter is A, and the reference signal frequency is Xta
l, if the frequency division ratio of the reference frequency divider is R, then (Equation 1) is obtained.

[0094]

(Equation 1)

Suppose that F _vco = 1800 MHz and Xtal = 1
When 6 MHz and R = 32, (N, A) = (56, 1)
6). At this time, even if A is advanced, 16/32 =
It can be changed only in 0.5 MHz steps. But R
= 33, (N, A) = (58,1), then (Equation 2), allowing fine adjustment in 0.24..MHz steps, allowing fine adjustment while maintaining high loop bandwidth characteristics It becomes.

[0096]

(Equation 2)

Further, as the output frequency of the voltage controlled oscillator 208 increases, the frequency control sensitivity of the voltage controlled oscillator 208 decreases, and the effect of improving the phase noise near the output frequency due to the high loop bandwidth decreases. Therefore, the phase noise is improved by reducing the frequency division ratio of the reference frequency divider as the output frequency becomes higher, thereby increasing the loop bandwidth.

As an example, low frequency F _vco1 = 1488
MHz and a high frequency F _vco2 = 2500 MHz, when the division ratios of the reference frequency divider are R1 = 45 and R2 = 32, respectively, and calculated using ( _Equation 1), ( _Equation 3) and (Equation 4) become that way.

[0099]

(Equation 3)

[0100]

(Equation 4)

The output frequency is set by the above relational expression. That is, for a low frequency F _vco1 , _16/45 =
0.35 MHz, 16/32 for high frequency F _vco2
= 0.5 MHz comparison frequency to achieve a high loop bandwidth.

Next, the variable attenuators 204 and 220 will be described. 10 and 13, the AGC 226 is
A control voltage is supplied to both the variable attenuators 204 and 220, respectively. The variable attenuator 204 at the preceding stage is connected to the mixer 20.
The input level is varied so as to control the cross modulation at the time of the strong electric field multi-signal generated in 6. The overall gain is adjusted by the variable attenuator 220, and the operating range is set to 50 dB or more. This achieves a wide input range.

(Embodiment 7) Next, an intermediate frequency tuning filter having a roll-off characteristic will be described. FIG. 17 shows another example of the portion E in FIGS. 10 and 13. 303 and 304 are changeover switches, and 301 and 302 are intermediate frequency tuning filters having roll-off characteristics and different bandwidths. The changeover switches 303 and 304 are switched in conjunction with each other by a switch signal 305 from the outside, and the intermediate frequency signal selectively passes through the intermediate frequency tuning filter 301 or 302. This enables optimum reception even when the bandwidth of the received high-frequency signal differs depending on the transmission rate.

Embodiment 8 Hereinafter, Embodiment 8 of the present invention will be described. In FIG. 18, a high-frequency device according to the present invention includes an input terminal 401 to which a high-frequency digital signal is input, an input filter 402 connected to the input terminal 401, and an input filter 4.
02 is supplied to one input and the other input is connected to one output of the first oscillator 403, and an intermediate frequency tuned surface wave to which the output of the mixer 404 is supplied. A filter 405, an I / Q detector 406 to which the output of the intermediate frequency tuning surface acoustic wave filter 405 is connected, a control terminal 407 to which frequency control data is input, and an addition / subtraction counter 4
08 and a PLL unit 409 connected via the
The section 409 is connected to the other output of the first oscillator 403, and outputs the output of the PLL section 409 and the first
(Hereinafter referred to as a low-pass filter) 410 connected between the input of the oscillator 403 and the input of the oscillator 403. The I / Q detector 406 includes a two divider 411 to which the output of the intermediate frequency tuning surface acoustic wave filter 405 is connected, and a first divider in which one output of the two divider 411 is connected to one input. And the other input of the first detector 412 is connected to the output of the second oscillator 413, and the I signal output as the output of the first detector 412 is the first output. Connected to terminal 414.
A second detector 415 having the other output of the two-way divider 411 connected to one input;
A 90-degree phase shifter 416 is connected to the other input of 15, and a second oscillator 413 is connected to the input of the 90-degree phase shifter 416. Also, the second detector 415
Is connected to the second output terminal 417. The second oscillator 413 includes a surface wave resonator 418
An oscillator is constituted by a resonance element using the same. A substrate of the surface acoustic wave resonator 418 and a substrate of the intermediate frequency tuning surface acoustic wave filter 405 are made of the same material. Further, a frequency error detector 419 to which the I signal output and the Q signal output are connected is connected to the addition / subtraction counter 408.

The operation of the high-frequency digital signal receiving apparatus configured as described above will be described below. The oscillation frequency of the first oscillator 403 is determined by the control data first input to the control terminal 407. The resulting intermediate frequency signal 456 is shown in FIG. Here, the intermediate frequency signal 456 is centered on fo.

The center frequency fo of the intermediate frequency tuned surface acoustic wave filter 405 and the second oscillation frequency fo are both changed by fo + α due to the same substrate material due to an external temperature change or the like. If the intermediate frequency signal remains at 456, the center frequency of the intermediate frequency tuning surface acoustic wave filter 405 changes by about fo + α due to an external temperature change or the like, so that the baseband signal 457 of the I signal output and the baseband signal of the Q signal output The symmetry with 458 is broken. In this case, particularly, the baseband signal band of the Q signal output becomes narrow, causing a detection error. Therefore, the first oscillator 403 is controlled by the addition / subtraction counter so that the intermediate frequency signal becomes fo + α as 459 in accordance with the frequency error of the baseband signal. As a result, since the baseband signal 460 of the I signal output and the baseband signal 461 of the signal output are both balanced, no detection error occurs.

The intermediate frequency tuning surface wave filter 40
The bandwidth of the 3 dB cutoff frequency of 5 is equal to or more than −0% + 5% of the frequency bandwidth equal to the symbol rate of the received signal.
Within the first output terminal 414 and the second output terminal 414.
The roll-off filter required next to the output terminal 417 is unnecessary. That is, the function of a roll-off filter can be added to the intermediate frequency tuned surface wave filter 405.

That is, as shown in FIG. 19B, the band characteristic of the intermediate frequency tuned surface acoustic wave filter 405 is 3 dB.
The bandwidth of the frequency to be reduced is set to be equal to or more than −0% and equal to or less than + 5% of the bandwidth equal to the symbol rate of the received signal. Then, the 3 dB cutoff frequencies of the baseband signal 460 of the I signal output and the baseband signal 461 of the Q signal output are each -0% of the bandwidth of １ ／ of the symbol rate.
Above is within + 5%. That is, the function of the roll-off filter is -0% by the intermediate frequency tuning surface acoustic wave filter 405.
The above can be realized with an accuracy within + 5%. Therefore, at the next stage of the first output terminal 414 and the second output terminal 417,
There is no need to add a new roll-off filter. Therefore, according to the present embodiment, it is not necessary to newly add the function of the roll-off filter, so that a low-cost high-frequency device can be realized.

(Embodiment 9) Embodiment 9 of the present invention will be described below. FIG.
FIG. 19 is a block diagram of a high-frequency device according to Embodiment 9 of the present invention.

In FIG. 20, reference numeral 501 denotes an input terminal, a fixed input filter 502 connected to the input terminal 501, a first gain control amplifier 504 connected to the output side of the fixed input filter 502, A gain control terminal 503 connected to the gain control input of the first gain control amplifier 504; a mixer 505 having the output of the first gain control amplifier 504 connected to one input; A first oscillator 506 having one input supplied to the other input, a PLL control unit 508 connected to the other output of the first oscillator 506, and a PLL control unit 5
08 and an input of the first oscillator 506 (hereinafter, referred to as a low-pass filter)
509, a control terminal 507 connected to a frequency data input terminal of the PLL control unit 508, and the mixer 505
The second gain control amplifier 510 to which the output of the second gain control amplifier 510 is connected is connected to the gain control terminal 503, and the output of the second gain control amplifier 510 is connected to the second gain control amplifier 510. Intermediate frequency tuning filter 511, an I / Q detector 519 to which the output of the intermediate frequency tuning filter 511 is connected, and a first output terminal 5 to which the Q signal output of the I / Q detector 519 is connected.
17 and a second output terminal 518 to which the I signal output of the I / Q detector 519 is connected.

The configuration of the I / Q detector 519 is as follows. That is, a two divider 512 to which the output of the intermediate frequency tuning surface acoustic wave filter 511 is connected, a first detector 513 having one output of the two divider 512 connected to one input, 90 ° phase shifter 514 connected to the other input of the detector 513
Second oscillator 515 connected to the input of the phase shifter 514
A second detector 516 in which the other output of the two divider 512 is connected to one input, and a second detector 51
The other input of 6 is connected to the second oscillator 515 and the output thereof is connected to a second output terminal 518. The output of the first detector 513 is connected to a first output terminal 517. The frequency of the first oscillator 506 is such that the intermediate frequency input to the tuning filter 511 is larger than half the difference between the maximum frequency and the minimum frequency of the signal input to the input terminal 501. .

The operation of the high-frequency device configured as described above will be described below. Now suppose that the intermediate frequency is I
F, the maximum frequency input to the input terminal is RFma
x, and the minimum frequency is RFmin. Further, assuming that the image interference frequency of the upper heterodyne system is Im, Im> R
If the relation is Fmax, the image interference frequency is not input to the input terminal 501 of the high-frequency device.

On the other hand, since Im = RF + 2 * IF, the frequency when Im becomes the minimum frequency is RFmin
+ 2 * IF. That is, RFmin + 2 * IF> RFmax. By modifying this expression, IF> (RFmax−RFmin) / 2. Therefore, the first oscillator 506 has an oscillation frequency of one half of the difference between the maximum frequency RFmax of the signal input to the input terminal 501 and the minimum frequency RFmin.
If a larger intermediate frequency IF can be obtained, even if the image interference frequency IF is input to the input terminal 501, the fixed input filter 502 passes through the intermediate frequency tuning filter 511 because it is larger than RFmax. Will not be able to.

In the present embodiment, RFmax = 550M
Hz and RFmin = 50 MHz (550-5
0) / 2 = 250 MHz or more, the intermediate frequency IF is set so that the image interference frequency Im is reduced to the input terminal 50.
Even if it is input to 1, the fixed input filter 502 does not output from the intermediate frequency tuning filter 511.

At present, in many CATV downlink signals,
The 612 MHz band is an unused channel that is not used for signal transmission. Therefore, in one example of the present embodiment, the 612 MHz band is set as the intermediate frequency of the high-frequency device.

As another embodiment, 612 MH
If there is direct interference in the z band, a 612 MHz band attenuation trap is added to the fixed input filter 502 in order to prevent this.

Therefore, a filter for removing the image interference frequency Im by obtaining an intermediate frequency IF that is larger than half the difference between the maximum frequency RFmax and the minimum frequency RFmin of the signal input to the input terminal 501 is provided. It becomes unnecessary. That is, it is only necessary to dispose a simple fixed input filter 502 that allows only frequencies (RFmax to RFmin) input to the input terminal 501 to pass.

Since the fixed input filter 502 does not pass frequencies below the minimum frequency RFmin,
It is not affected by the CATV upstream signal. Therefore, a high-frequency device can be provided by a simple control method.

It is to be noted that, by housing the high-frequency device of the fifth embodiment in the same shield case, lock disturbance to the high-frequency device can be prevented.

Embodiment 10 In FIG. 21, reference numeral 601 denotes a rectangular parallelepiped metal case, which constitutes a so-called tuner. An input terminal 602 is provided on one side surface of the metal case 601, and an output terminal 603 is provided on the other side surface. A mixer in which a signal input to the input terminal 602 is supplied into the case 601 and an output of a local oscillator is supplied to the other input;
I provided between the mixer and the output terminal 603
/ Q extraction means. 604 is the case 60
1 is a leg for mounting 1 on the parent board. Reference numeral 605 denotes an input / output terminal group provided in the longitudinal direction of the plane having the maximum area of the case 601, and includes a mixer, a local oscillator, and an I / O terminal.
It is connected to Q extraction means and the like. Here, the I / Q extraction means is a concept including at least one of an I / Q detector and an A / D converter.

Reference numeral 606 denotes a substrate. On the surface of the substrate 606, a demodulator 6 constituting a demodulation unit constituted by an integrated circuit is provided.
07 is placed. The input of the demodulator 607 is connected to the input terminal 608 of the substrate 606, and is connected to the output terminal 603 by a connector. 609, an input / output terminal group provided on the substrate 606;
7 and is provided in the longitudinal direction of the substrate 606.

Reference numeral 610 denotes a connecting member provided on the input terminal 608 side of the substrate 606. The connecting member 610 is connected to the side surface of the case 601 on the output terminal 603 side.
Here, the substrate 606 is not covered with the case. That is, the demodulator 607 mounted on the substrate 606 directly comes into contact with the outside air. This is the demodulator 6
07 is to dissipate the heat generated by consuming large electric power of about 2W.

[0123] Incidentally, in this embodiment input output terminal group 60
By providing 5,609 on the side of the largest area, so-called face-down mounting becomes possible on the parent substrate, and the thickness of the parent substrate can be reduced and thinned. Separately, as shown in FIG. 22, input / output terminal groups 605 and 609 are provided on the longitudinal side surface adjacent to the maximum area side, so that the mounting area on the parent board is reduced by so-called vertical mounting. It is also possible.

Further, as shown in FIG.
The substrate inside and the substrate 619 on which the demodulator 607 is mounted may be formed on one substrate.

FIG. 24A is a cross-sectional view of a main part of a substrate 606 on which a demodulator 607 is mounted. A copper foil 611 is laid below the demodulator 607 on the surface of the substrate 606, and is in contact with the lower surface of the demodulator 607. A copper foil 612 is also laid on the back surface of the substrate 606, and is connected to the copper foil 611 by a plurality of through holes 613. As a result, the heat generated by the demodulator 607 is transmitted to the copper foil 611 and the substrate 6 through the through hole 613.
Heat is dissipated from the copper foil 612 on the back side of the reference numeral 06.

FIG. 24B is a plan view of a main part as viewed from the back surface of the substrate 606. In FIG. 24B, the copper foil 61
A plurality of strip-shaped non-formed portions 615 of the resist print 614 are provided on the top 2 by the resist print 614.
The solder 616 having a convex shape adheres to the non-resist forming portion 615 by soldering, and the solder 616 enables more efficient heat radiation. The through hole 613
Are provided on the resist print 614. The reason why the through hole 613 is provided on the resist print 614 is as follows.
This is to prevent the solder 616 from entering the demodulator 607 side and causing a short circuit or the like. The resist printing 6 between the first solder and the second solder of the plurality of solders 616 is provided.
14 are substantially equal in width. In the present embodiment, this width is 1 mm. The diameter of the through holes 613 is 0.5 mm, and 15 through holes 613 are provided at the center of the lower surface of the demodulator 607.

FIG. 25 shows that the demodulator 6 on the substrate 617 on which the demodulator 607 is mounted
07 is provided with a hole 618 on the lower surface. This hole 61
Numeral 8 is larger than the chip size of the demodulator 607 and smaller than its outer shape. Although the hole 618 may be a square hole or a round hole, it is preferable to make the hole 618 as large as possible within a range smaller than the outer shape of the demodulator 607 by 0.5 mm in terms of heat radiation. The above-mentioned 0.5 mm is a consideration for mounting even if the mounting position of the demodulator 607 is slightly shifted.

FIG. 26 shows a case 6 for mounting a high-frequency device.
The first substrate 621 and the second substrate 622 are arranged in parallel in 20. Then, a tuner unit is mounted on the first substrate 621, and a demodulation unit is mounted on the second substrate 622. With this mounting, the tuner unit and the demodulation unit can be connected at the optimum component mounting location and at the shortest distance, so that the high-frequency device can be downsized.

(Eleventh Embodiment) FIG. 27 is a block diagram showing a layout of each block of a high-frequency device according to an eleventh embodiment of the present invention.

In FIG. 27, reference numeral 701 denotes an input terminal. A fixed input filter 702 connected to the input terminal 701, a first gain control amplifier 704 connected to the output side of the fixed input filter 702, A gain control terminal 703 connected to the gain control input of the first gain control amplifier 704, a mixer 705 having one input connected to the output of the first gain control amplifier 704, and the other of the mixer 705 A first oscillator 706 having one output connected to the input of the first oscillator 706, a PLL control unit 708 having the other output of the first oscillator 706 connected, and a PLL control unit 7
08 and an input of the first oscillator 706 (hereinafter, referred to as a low-pass filter)
709, a control terminal 707 connected to a frequency data input terminal of the PLL control unit 708,
And the gain control input of the second gain control amplifier 710 is connected to the gain control terminal 703, and the output of the second gain control amplifier 710 is connected to the second gain control amplifier 710. The connected intermediate frequency tuning filter 711 and the intermediate frequency tuning filter 711
And an I / Q detector 719 to which the output of
It comprises a first output terminal 717 to which the Q signal output of the detector 719 is connected, and a second output terminal 718 to which the I signal output of the I / Q detector 719 is connected.

The configuration of the I / Q detector 719 is as follows. That is, a two divider 712 to which the output of the intermediate frequency tuning filter 711 is connected, a first detector 713 to which one output of the two divider 712 is connected to one input, and a first detector 90 degree phase shifter 714 connected to the other input of the
Second oscillator 715 connected to the input of the phase shifter 714
A second detector 716 in which the other output of the splitter 712 is connected to one input, and a second detector 71
The other input of the second oscillator 715 is connected to the second oscillator 715 and its output is connected to a second output terminal 718. The output of the first detector 713 is connected to a first output terminal 717. These components are housed in the same shield case 740.

Hereinafter, this metal shield case 740 will be described.
A description will be given of the arrangement of each of the components housed therein. The shield case 740 includes a first side plate 741 and the first side plate 741.
Second lateral plate 742 provided in parallel with the horizontal lateral plate 741
And a first vertically provided with the horizontal side plates 741 and 742.
Of a vertical side plate 743 and a second vertical side plate 744. Then, in parallel with the vertical side plates 743 and 744, a metal partition plate is formed of a first partition plate 745, a second partition plate 746, and a third partition plate 747 in order from the first vertical side plate 743 side.
Is provided.

Further, a fourth partition plate 748 is provided in parallel with the first horizontal side plate 741 from the first vertical side plate 743 to the second partition plate 746 through the first partition plate 745. Forming a chamber.

The partition plate 745, the partition plate 748, and the side plate 74
In the compartment 749 partitioned by 2, an input terminal 701 provided on the vertical side plate 743, a fixed input filter 702,
A first gain control amplifier 704 is provided. A mixer 705 is mounted in a compartment 750 partitioned by the partition plate 745, the partition plate 746, the partition plate 748, and the side plate 742. An oscillator 706 is mounted in a compartment 751 partitioned by a partition plate 745, a partition plate 746, and a lateral plate 741. A PLL control unit 708 and a low-pass filter 709 are mounted in a compartment 752 partitioned by a partition plate 748, a partition plate 745, and a horizontal plate 741, and a horizontal plate 741.
Is provided with a gain control terminal 703 and a control terminal 707. In the compartment 753 partitioned by the partition plate 746 and the partition plate 747, the second gain control amplifier 710 on the side of the horizontal plate 742 and the intermediate frequency tuning filter 71 on the side of the horizontal plate 741.
1 has been implemented.

The partition plate 747 and the side plates 741, 74
2. The compartment 754 divided by the vertical side plate 744 has I / Q
A detector 719 is mounted, and a first output terminal 717 and a second output terminal 718 are mounted on the vertical side plate 744. This is because the length from the first detector 713 to the first output terminal 717 is equal to the length from the second detector 716 to the second output terminal 718, and the symmetry of the I / Q detection output is obtained. This is to keep

Note that the first output terminal 717 and the second output terminal 718 may be provided on the horizontal plate 741 while maintaining the symmetry of the I / Q detection output. In this case, if the shield case 740 is planted on the parent board with the side plate 741 side down, the signals are arranged in the same direction on the parent board side, which is convenient for wiring. Further, the gain control terminal 703 connected to the second gain control amplifier 710 may be provided on the side plate 741 side of the compartment 753. In this case, although the number of gain control terminals 703 increases, noise in the compartments 749 and 750 is not picked up. Further, when the shield case 740 is mounted on the parent board as a face-down type, it becomes stable against vibration. Therefore, particularly when the present high-frequency device needs to be stable against vibration, it is mounted on the parent board as a face-down type. Is preferred.

In any case, the frequency handled in this way,
It is important to divide into compartments according to their functions and store them as in this embodiment. In particular, it is preferable that the partition plate 746 and the partition plate 747 are doubled in some cases to complete the partition.

The function and frequency of each compartment will now be described. The compartment 749 is a filter 702 and a first gain control amplifier 704 for an input signal of 50 MHz to 550 MHz, and it is important to prevent external interference signals. The compartment 750 has an input frequency of 612 MH
It is a mixer that converts the signal to an intermediate frequency in the z band, and it is important to prevent this signal from leaking to the outside. The reason for setting the intermediate frequency to the 612 MHz band is described in detail in the ninth embodiment. The compartment 751 is about 662 MH
It is a variable frequency of z to 1162 MHz, and it is important to prevent a signal from leaking to the outside. Compartment 752
Is a digital signal for channel selection, and it is important to take care that this digital signal does not leak to the outside or the compartment 749. The compartment 753 has an intermediate frequency of 6
This is where the 12 MHz band is amplified with high precision, and it is necessary to minimize the intrusion of external interference signals. That is, the partition plate 746 and the partition plate 747 need to be more completely mounted. The compartment 754 is an I / Q detector and has 612M.
The frequency band of the detection output signal is handled from the Hz band. Here, it is necessary to prevent intrusion of a signal from the outside and perform detection with few errors. By arranging the compartments in this way, the first oscillator 706 and the second oscillator 715 are separated by a partition plate 746 and a partition plate 747, and are arranged diagonally.

The operation of the high-frequency device configured as described above will be described below.

[0140] 50 MHz input to the input terminal 701
The high-frequency digital signal of 550 MHz is filtered by a fixed input filter 702 to remove unnecessary signals other than 50 MHz to 550 MHz. Then, after being amplified by the first gain control amplifier 704, the frequency provided from the oscillator 706 is mixed by the mixer 705 to obtain an intermediate frequency in the 612 MHz band. After the intermediate frequency is amplified by the second gain control amplifier 710, only the 612 MHz band, which is the intermediate frequency, is obtained by the intermediate frequency tuning filter 711. Then I /
The I signal output detected by the Q detector 719 is output from the second output terminal 718, and the Q signal output is output from the first output terminal 717. The I signal output and the Q signal output are then processed by a digital signal demodulator having a digital clock.

As described above, according to the present embodiment, the high-frequency device of the present embodiment is housed in the same shield case 740, so that the shielding effect of the shield case 740 makes it possible to provide a digital signal to the high-frequency device. Clock disturbance can be prevented.

As another effect, the first oscillator 7
06 and the second oscillator 715, the first oscillator 706 and the second oscillator 715 are separated by a partition plate 746 and a partition plate 747 in order to reduce spurious interference caused by mutual interference between the first oscillator 706 and the second oscillator 715.
The first oscillator 706 and the second oscillator 715 are separated from each other and arranged diagonally.
There is also an effect that spurious interference due to mutual interference of the above can be reduced.

As another effect, by separating the compartment 752, there is also an effect that the digital signal for channel selection does not interfere with other compartments.

As another effect, by providing the compartment 753, the first oscillator 706 and the second oscillator 715 can be separated from each other.
Also, there is an effect that spurious interference caused by mutual interference of the second oscillator 715 can be reduced.

As another effect, the first output terminal 717 and the second output terminal 718 are provided on the horizontal side plate 741 while maintaining the symmetry of the I / Q detection output.
When the shield case 740 is planted on the parent board with the side facing down, signals are arranged in the same direction on the parent board side, so that there is also an advantage that wiring is convenient.

[0146]

As described above, according to the present invention, an input terminal to which a digitally modulated high-frequency signal is input, a signal input to this input terminal is supplied to one input, and is input to the other input. Comprises a mixer to which the output signal of the local oscillator is supplied, and an output terminal to which the output signal of the mixer is supplied, the local oscillator being interposed in a voltage-controlled oscillator and a control loop of the voltage-controlled oscillator. The voltage-controlled oscillator includes an oscillation unit and a tuning unit, and the tuning unit maintains a frequency adjustment unit and an adjustment state of the frequency adjustment unit. And a control loop having a sufficiently large high loop bandwidth such that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator .
The local oscillator and the mixer are at least metal casings.
And a part of the tuning section
The conductance is provided in the case or in this case.
Provided in the vicinity of the metal partition plate
The chip conditioner mounted on the board by reflow soldering
This is a high-frequency device to which a sensor is connected . Therefore, with the above configuration, the frequency adjustment unit is provided as the tuning unit of the voltage controlled oscillator, so that tuning adjustment can be easily performed, and the adjustment state of the frequency adjustment unit is maintained by the maintenance means, so Etc. are sufficiently secured. In this way, if the maintenance means is used to secure the stability of the oscillation frequency over a long period of time, including vibration resistance, a stray capacitance is formed because its dielectric constant is larger than that of air, and as a result, the dielectric constant of the stray capacitance is Oscillation characteristics deteriorate because loss occurs.However, in the present invention, the control loop of the voltage-controlled oscillator has a large loop bandwidth that is large enough that the noise of the local oscillator is not affected by the noise of the voltage-controlled oscillator. The correction can be performed in a wide frequency range, and as a result, the output signal output from the local oscillator to the mixer can be made clear with little phase noise. Also local
The oscillator and mixer are stored in a metal case,
The inductance forming a part of the tuning unit is
Or near the metal partition plate provided in this case.
Stable potential near inductance
Metal case or partition plate
And is not affected by external signals,
Vibration frequency can be obtained. Furthermore, the inductance
Is a chip capacitor attached to the board by reflow soldering
Is connected, so in reflow soldering,
The self-alignment effect works on the chip capacitor,
Is fixed. Therefore, the voltage controlled oscillator
Of the oscillating frequency is reduced.

[Brief description of the drawings]

FIG. 1 is a block diagram of a high-frequency device according to a first embodiment of the present invention.

FIG. 2A is a perspective view of a local oscillator of the high-frequency device, and FIG.

FIG. 3A is a perspective view of a local oscillator according to another example of the high-frequency device, and FIG.

FIG. 4 is a block diagram of a high-frequency device according to a second embodiment of the present invention.

FIG. 5A is a front view of an inductance according to a first example used for a tuning unit of a local oscillator of a high-frequency device. FIG. 5B is a front view of an inductance used for a tuning unit of a local oscillator of the high-frequency device. (C) is a perspective view of the inductance of the third example, and FIG.

FIG. 6 is a block diagram of a high-frequency device according to a third embodiment of the present invention.

7A is a perspective view of a local oscillator of the high-frequency device, FIG. 7B is a side view of a main part of an adjusting unit of the local oscillator, and FIG. 7C is an adjusting unit according to the second example of the same. Side view of main part of

8 (a) is a perspective view of a local oscillator according to a fourth embodiment of the present invention. FIG. 8 (b) is a side view of a main part of a local oscillator adjusting unit. FIG. 8 (c) is a local oscillator adjusting unit. (D) is a perspective view of a main part of the adjusting unit according to the second example.

9A is a perspective view of a local oscillator according to a fifth embodiment of the present invention. FIG. 9B is a side view of a main part of a movable conductor of the local oscillator. FIG. Main part plan view of the adjustment part formed in the inductance

FIG. 10 is a block diagram of a high-frequency device according to a sixth embodiment of the present invention.

FIG. 11 is a first frequency characteristic diagram for explaining characteristics of a local oscillator of the high-frequency device.

12A is a second frequency characteristic diagram for explaining the characteristics of the local oscillator of the high-frequency device. FIG. 12B is a third frequency characteristic diagram for explaining the characteristics of the local oscillator of the high-frequency device. Of frequency characteristics

FIG. 13 is a detailed block diagram of the high-frequency device.

FIG. 14A is a circuit diagram showing a first example of the voltage controlled oscillator of the high frequency device, and FIG. 14B is a circuit diagram showing a second example of the voltage controlled oscillator of the high frequency device.

FIG. 15 is a circuit diagram of a loop filter of a local oscillator of the high-frequency device.

16A is a plan view of a main part of the voltage controlled oscillator of the high-frequency device, and FIG. 16B is a side view of a main part of the voltage controlled oscillator of the high-frequency device.

FIG. 17 is a block diagram of a high-frequency device according to a seventh embodiment of the present invention.

FIG. 18 is a block diagram of a high-frequency device according to an eighth embodiment of the present invention.

FIGS. 19 (a) to (d) are main part waveform diagrams of the same high-frequency device.

FIG. 20 is a block diagram of a high-frequency device according to a ninth embodiment of the present invention;

FIG. 21 is a perspective view of a high-frequency device according to a first example of the tenth embodiment of the present invention.

FIG. 22 is a perspective view of a high-frequency device according to a second example.

FIG. 23 is a perspective view of a high-frequency device according to a third example.

24A is a cross-sectional view of a main part of the demodulator of the high-frequency device, and FIG. 24B is a plan view of the main part of the demodulator viewed from the back surface of the substrate.

FIG. 25 is a perspective view of a second example of the demodulator of the high-frequency device.

FIG. 26 is a side view of a partially crushed high frequency device according to a fourth example.

FIG. 27 is a block diagram of a high-frequency device according to Embodiment 11 of the present invention.

[Explanation of symbols]

 Reference Signs List 101 input terminal 103 first oscillator 104 mixer 107 first output terminal 108 second output terminal 111 PLL section 112 low-pass filter 113 phase comparator 118 frequency divider 119 movable conductor 120 adhesive

Continuation of the front page (56) References JP-A-1-188026 (JP, A) JP-A-62-111502 (JP, A) JP-A-62-98514 (JP, A) JP-A-5-41324 (JP) JP-A-2-42705 (JP, A) JP-A-7-153627 (JP, A) JP-A-5-14059 (JP, A) JP-A-4-16038 (JP, A) 4-2223 (JP, A) Japanese Utility Model 5-20365 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H04B 1/08-1/26 H04L 27/00 H03B 5 / 18 H01F 17/00-21/06

Claims (38)

(57) [Claims] An input terminal to which a digitally modulated high-frequency signal is input, and a signal input to the input terminal is supplied to one input and an output signal of a local oscillator is supplied to the other input. A mixer, and an output terminal to which an output signal of the mixer is supplied, wherein the local oscillator includes a voltage-controlled oscillator, a frequency divider, a phase comparator, and a loop interposed in a control loop of the voltage-controlled oscillator. Including a filter, the voltage-controlled oscillator has an oscillating unit and a tuning unit, the tuning unit has a frequency adjusting unit, and maintaining means for maintaining the adjustment state of the frequency adjusting unit,
The control loop has a sufficiently large high loop bandwidth that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator, and
The container should be stored in at least a metal case and
The inductance that forms part of the tuning section
Or near the metal partition plate provided in this case
And the inductance is based on reflow soldering.
A high-frequency device to which a chip capacitor mounted on a board is connected . 2. The high-frequency device according to claim 1, wherein the frequency adjusting unit is formed of a conductive member provided on the substrate in a movable state, and is fixed by a fixing member used as a maintenance unit. 3. A pattern inductance line is used as an inductance element constituting a tuning unit, a movable conductor is implanted in the vicinity of the pattern inductance line, and the movable conductor is adjusted by moving the fixed conductor used as a maintenance means. The high-frequency device according to claim 1, wherein the high-frequency device is fixed by a member. 4. The high-frequency device according to claim 3, wherein the movable conductor is provided above the width center of the pattern inductance line and substantially parallel to the pattern inductance line. 5. The high-frequency device according to claim 3, wherein the movable conductor is implanted near an open end of the pattern inductance line. 6. An air core coil or a flat plate line is implanted as an inductance element constituting the tuning unit, and the air core coil or the flat line is adjusted and fixed by a fixing member used as a maintenance means. 2. The high-frequency device according to claim 1. 7. The frequency adjusting section is constituted by a conductor wound around an outer periphery of a core used as a maintaining means.
2. The high-frequency device according to claim 1. 8. An inductance element forming a tuning unit includes a cylindrical insulator, a conductor wound around the outer periphery of the insulator, a concave screw provided in the insulator, and a fitting to the concave screw. 2. The high-frequency device according to claim 1, wherein the mating convex screw comprises a movable core provided on an outer periphery. 9. The method according to claim 1, wherein a pattern inductance line and a movable conductor are connected in series as an inductance element constituting a tuning unit, and the movable conductor is adjusted and fixed by a fixing member used as a maintaining means. High frequency device. 10. The method according to claim 1, wherein a pattern inductance line is used as an inductance element constituting the tuning unit, and an adjusting unit provided on the pattern inductance line is trimmed and adjusted, and the trimmed portion is covered with a coating material. The high-frequency device according to claim 1. 11. A movable conductor is connected in series with the pattern inductance line, and the movable conductor is adjusted.
The high-frequency device according to claim 10, wherein the high-frequency device is fixed by a fixing member used as a maintenance unit. 12. The high-frequency device according to claim 1, wherein a film capacitor is used as the capacitance of the loop filter. 13. A film capacitor is mounted on a front surface side of a substrate, a lead wire thereof is inserted into a through hole provided in the substrate, and soldered to a conductor pattern on a back surface side of the substrate. The high-frequency device according to claim 12 , wherein the high-frequency device is a non-electrode forming portion. With 14. partitioning loop filter and the local oscillator in the partition plate, this is the partition plate provided with an opening for the passage of the conductor pattern for connecting between the local oscillator and the loop filter, in the vicinity of the opening, this The high-frequency device according to claim 12 , wherein a film capacitor is mounted so as to cover the opening. 15. The high-frequency device according to claim 1, wherein the loop filter includes two-stage transistors. 16. The high-frequency device according to claim 1, wherein a movable conductor forming a tuning unit, a varactor diode, and a pattern inductance line are sequentially connected in series, and the pattern inductance line side is connected to an oscillation unit side. 17. The high-frequency device according to claim 1, wherein a small-capacity chip capacitor is mounted close to the pattern inductance line between the series connection of the varactor diode and the pattern inductance line forming the tuning unit. 18. A small-capacity chip capacitor is inserted as a first capacitor between a varactor diode and an inductance forming a tuning unit, and a second capacitor is inserted between the varactor diode and an oscillation unit. 18. The high-frequency device according to claim 17 , wherein the first capacitor and the second capacitor use temperature correction capacitors. 19. The high-frequency device according to claim 1, wherein a reference frequency divider is provided in the phase comparator to which the reference frequency signal is input, and a frequency division ratio of the reference frequency divider can be changed. 20. The high-frequency device according to claim 19 , wherein the frequency division ratio of the reference frequency divider decreases as the output frequency of the voltage controlled oscillator increases. 21. A plurality of intermediate frequency tuning filters having roll-off characteristics and different bandwidths are provided in parallel between a mixer and an output terminal, and the intermediate frequency tuning filters are input from an input terminal. The high-frequency device according to claim 1, wherein the high-frequency device can be selectively switched based on a signal transmission rate. 22. The high-frequency device according to claim 1, wherein a variable attenuator is provided between the input terminal and the mixer, and a control terminal for controlling the variable attenuator is provided. 23. An I / Q detector connected to an output terminal via an intermediate frequency tuning surface acoustic wave filter, a first output terminal from which an I signal of the I / Q detector is output, and the I / Q A second output terminal for outputting a Q signal of the detector;
A second oscillator for supplying an oscillation frequency signal to the Q detector is provided, and the substrate of the surface acoustic wave resonator and the substrate of the intermediate frequency tuned surface acoustic wave filter constituting the resonance section of the second oscillator are made of the same material. A frequency error detector for signals output from the first output terminal and the second output terminal is provided, and the data of the frequency divider is incremented / subtracted based on the output of the error detector. The high-frequency device according to claim 1, wherein the control is performed by a counter, and the center of the intermediate frequency and the oscillation frequency of the second oscillator are made substantially the same. 24. 3d of an intermediate frequency tuned surface wave filter
The bandwidth of the B cutoff frequency is set to 0% or more and + 5% or less of the bandwidth equal to the symbol rate of the received signal.
24. The high-frequency device according to 23 . 25. An input filter is inserted between an input terminal and a mixer, and the local oscillator has an oscillation frequency of one half of a difference between a maximum frequency and a minimum frequency of a signal input to the input terminal. The high-frequency device according to claim 1, wherein a frequency at which a larger intermediate frequency is obtained is oscillated, and the input filter is a fixed filter that passes frequencies from the minimum frequency to the maximum frequency. 26. The output signal frequency of the mixer is approximately 612M.
The high-frequency device according to claim 25 , wherein the frequency is set to Hz. 27. An I / Q extracting means connected to an output terminal, and a first I / Q extracting means connected to an I signal output of the I / Q extracting means.
And a second output terminal to which the Q signal output of the I / Q extraction means is connected, and a demodulator connected to the first and second output terminals, and the demodulator is made of metal. The high-frequency device according to claim 1, which is mounted outside the cover. 28. A substrate on which a demodulator composed of an integrated circuit is mounted on the front surface, a copper foil laid on the lower surface of the demodulator, and a copper foil provided on the rear surface of the substrate are connected by through holes. 28. The high-frequency device according to claim 27 . 29. The semiconductor device according to claim 27 , wherein a hole larger than a chip element inside the integrated circuit and smaller than an outer periphery of the integrated circuit is provided below the integrated circuit on the substrate on which the demodulator including the integrated circuit is mounted. The high-frequency device according to claim 1. 30. The method according to claim 28 , wherein a plurality of strip-shaped resist non-formed portions are provided on the copper foil provided on the back surface of the substrate, and the solder is fused to the resist non-formed portions in a convex shape. High frequency equipment. 31. An input filter provided between an input terminal and a mixer, an intermediate frequency tuning filter connected to an output terminal, and I / Q extraction means connected to an output of the intermediate frequency tuning filter. The I / Q extraction means I
2. The device according to claim 1, wherein a first output terminal to which a signal output is connected, and a second output terminal to which a Q signal output of the I / Q extracting means are connected, are housed in the same shield case. High frequency equipment. 32. The high-frequency device according to claim 31 , wherein at least one or more shield plates are arranged between the mixer and the oscillator used for the I / Q extraction means. 33. The high-frequency device according to claim 31 , wherein the mixer and the oscillator used for the I / Q extracting means are arranged diagonally in the same shield case. 34. An input terminal is provided on one longitudinal side surface of a substantially rectangular shield case, and an input filter and the mixer are arranged following the input terminal. 32. The high-frequency device according to claim 31 , wherein a local oscillator that supplies an oscillation frequency to the mixer is arranged in parallel with a partition plate interposed therebetween. 35. The high-frequency device according to claim 32 , wherein a compartment for mounting an intermediate frequency tuning filter is provided between the local oscillator that supplies an oscillation frequency to the mixer and the I / Q extraction means. 36. The high-frequency device according to claim 34 , wherein a control terminal of a local oscillator and an output terminal of I / Q extraction means are provided near the first horizontal side plate of the shield case. 37. An input terminal to which a digitally modulated high-frequency signal is input, and a signal input to the input terminal is supplied to one input and an output signal of a local oscillator is supplied to the other input. A mixer, and an output terminal to which an output signal of the mixer is supplied, wherein the local oscillator includes a voltage-controlled oscillator, a frequency divider, a phase comparator, and a loop interposed in a control loop of the voltage-controlled oscillator. A voltage controlled oscillator having an oscillating unit and a tuning unit.
The control loop has a sufficiently large high loop bandwidth such that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator, and the reference frequency signal supplied to the phase comparator is divided by a frequency. The signal level of the comparison signal supplied from the device to the comparator is reduced at the same frequency except for the substantial center frequency portion, and the local oscillator and the mixer are at least
It is stored in a metal case and part of the tuning section
The inductance that forms
Provided in the vicinity of a metal partition plate provided in the
The inductance is attached to the board by reflow soldering
A high-frequency device to which a chip capacitor is connected . 38. An input terminal to which a digitally modulated high-frequency signal is input, and a signal input to the input terminal is supplied to one input and an output signal of a local oscillator is supplied to the other input. A mixer, and an output terminal to which an output signal of the mixer is supplied, wherein the local oscillator includes a voltage-controlled oscillator, a frequency divider, a phase comparator, and a loop interposed in a control loop of the voltage-controlled oscillator. A voltage controlled oscillator having an oscillating unit and a tuning unit.
The control loop has a sufficiently large high loop bandwidth such that the noise of the local oscillator is not influenced by the noise of the voltage controlled oscillator, and the control loop has a frequency close to the center frequency of the reference frequency signal supplied to the phase comparator. The frequency distribution characteristic of the signal level is compared with the frequency distribution characteristic of the signal level near the center frequency output from the local oscillator to the mixer, except for the substantial center frequency portion of the frequency distribution characteristic. The signal level at the same offset frequency from the frequency is made lower than the signal level to be reduced by a high loop hand width ,
The local oscillator and the mixer are at least metal casings.
And a part of the tuning section
The conductance is provided in the case or in this case.
Provided in the vicinity of the metal partition plate
The chip conditioner mounted on the board by reflow soldering
A high-frequency device to which a sensor is connected .