JP3111096B2 - CVD thin film forming equipment - Google Patents
CVD thin film forming equipmentInfo
- Publication number
- JP3111096B2 JP3111096B2 JP03298870A JP29887091A JP3111096B2 JP 3111096 B2 JP3111096 B2 JP 3111096B2 JP 03298870 A JP03298870 A JP 03298870A JP 29887091 A JP29887091 A JP 29887091A JP 3111096 B2 JP3111096 B2 JP 3111096B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film forming
- substrate holding
- holding table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、概円形の基板保持面を
備えた基板保持台上に保持される円盤状の基板に対し、
基板の上部から基板に向かう原料ガスの拡散流下路と、
基板保持台の側部よりその下方に向かう原料ガスの排出
路とを備え、基板の膜形成面に対してほぼ平行に、且つ
膜形成面の近傍にレーザー光を照射して、基板上に薄膜
を形成するCVD薄膜形成装置に関する。BACKGROUND OF THE INVENTION The present invention relates to a disk-shaped substrate held on a substrate holder having a substantially circular substrate holding surface.
A source gas diffusion flow path from the top of the substrate to the substrate,
A source gas discharge path extending downward from the side of the substrate holder, and irradiating a laser beam on the substrate substantially parallel to the film formation surface and in the vicinity of the film formation surface to form a thin film on the substrate. The present invention relates to a CVD thin film forming apparatus for forming a film.
【0002】[0002]
【従来の技術】こういったCVD薄膜形成装置の構成
が、図5に示されている。この装置1は、装置内に、そ
の内圧が調節可能な薄膜形成室1aを備え、この薄膜形
成室1a内に原料ガスgを供給する原料ガス供給部2
(この原料ガス供給路2の薄膜形成室1aに開口する部
位はノズル2aとされている)と、これを薄膜形成室1
aから排出する原料ガス排出部3とを備えて構成されて
いる。この薄膜形成室1aは、蓋部1bを備えた有底円
筒部材1cからその外殻部を形成されており、薄膜形成
室1aの中央部に、薄膜形成の対象となる円盤形状の基
板4が載置される基板保持面7aを備えた基板保持台7
が配設される。この基板保持台7は、軸直角の断面を備
えた円柱部材から形成されており、この面が基板保持面
7aとされている。また、この基板保持台7は、内部に
抵抗加熱体8を備えたものであり、この加熱体8により
原料ガスg、成膜中の膜6が加熱される。さらに、この
薄膜形成室1aにはレーザー光照射用窓10が設けら
れ、この窓10より導入されるレーザー光9により基板
上部域の原料ガスgが励起される。膜形成にあたって
は、この基板保持台7及びその近傍部が、形成に適する
温度(原料ガスの励起・膜形成促進エネルギー供給を熱
のみによる場合は700〜800℃、レーザーを共用す
る場合は350℃以下)に保持されて薄膜6形成がおこ
なわれる(加熱は上記の抵抗加熱体8による。)。この
時、薄膜形成室1aにおいて、原料ガスgが前述のノズ
ル2aから基板4に向かって上方より拡散流下され(こ
の経路を拡散流下路glと称する)、一部の原料ガスg
が薄膜6を形成して消費されるとともに、残部が基板保
持台7の側部に移動していき、この基板保持台7の側部
域よりさらに下方に向かって流下する(この経路を排出
路g2と称する)。さて、基板4の半径をR1、前記基
板保持台7の半径をR2とした場合に、従来、R2/R
1が1.2(6インチ/5インチ)程度に選択されてい
た。2. Description of the Related Art The structure of such a CVD thin film forming apparatus is shown in FIG. The apparatus 1 includes a thin film forming chamber 1a whose internal pressure can be adjusted, and a source gas supply unit 2 for supplying a source gas g into the thin film forming chamber 1a.
(The portion of the raw material gas supply path 2 that opens into the thin film forming chamber 1a is a nozzle 2a).
a, and a source gas discharge section 3 for discharging the raw material gas. The thin-film forming chamber 1a has an outer shell formed from a bottomed cylindrical member 1c having a lid 1b, and a disk-shaped substrate 4 on which a thin film is to be formed is provided in the center of the thin-film forming chamber 1a. Substrate holding table 7 having substrate holding surface 7a to be placed
Is arranged. The substrate holding table 7 is formed of a columnar member having a cross section perpendicular to the axis, and this surface is a substrate holding surface 7a. The substrate holding table 7 includes a resistance heating element 8 therein, and the heating element 8 heats the source gas g and the film 6 being formed. Further, a laser beam irradiation window 10 is provided in the thin film forming chamber 1a, and the source gas g in the upper region of the substrate is excited by the laser beam 9 introduced from the window 10. At the time of film formation, the substrate holding table 7 and its vicinity are heated to a temperature suitable for the formation (700 to 800 ° C. when the source gas excitation / film formation promoting energy is supplied only by heat, 350 ° C. when a laser is shared). The thin film 6 is formed while being held below (heating is performed by the above-described resistance heating element 8). At this time, in the thin film forming chamber 1a, the raw material gas g is diffused from the nozzle 2a toward the substrate 4 from above (this path is referred to as a diffused flow path gl), and a part of the raw material gas g
Is formed and consumed as a thin film 6, and the remainder moves to the side of the substrate holding table 7, and flows downward further from the side area of the substrate holding table 7 (this path is referred to as a discharge path). g2). Now, when the radius of the substrate 4 is R1 and the radius of the substrate holder 7 is R2, conventionally, R2 / R
1 was selected to be about 1.2 (6 inches / 5 inches).
【0003】[0003]
【発明が解決しようとする課題】しかしながら、このよ
うな寸法関係を選択する場合は、基板上に形成される薄
膜の厚みδcに対する薄膜の外側端部の厚み減少量δe
の比(薄膜の外側端部の厚みが若干薄くなる)が大きく
なる傾向があった。そして、膜厚が薄い基板周縁部は不
良部位として廃棄処理せねばならない問題が生じてい
た。即ち、例えば基板が5インチの場合は、外側端から
5mm程度にある外側端部に形成される製品(全基板面
積の15%程度)を廃棄処分していた。従って、従来、
製品の歩留りが悪く、生産効率が悪かった。そこで本発
明の目的は、上記のようなCVD薄膜形成装置におい
て、基板周縁部に形成される薄膜の厚みが、基板に形成
される薄膜の厚みに対して大きく異ならず、ほぼ全基板
上に形成される製品を使用可能で、歩留りが良く、生産
効率のよいCVD薄膜形成装置を得ることである。However, when such a dimensional relationship is selected, the thickness reduction δe of the outer end of the thin film with respect to the thickness δc of the thin film formed on the substrate is required.
(The thickness of the outer end portion of the thin film is slightly reduced). In addition, there has been a problem that the peripheral portion of the substrate having a small film thickness must be discarded as a defective portion. That is, for example, when the substrate is 5 inches, the product (about 15% of the entire substrate area) formed at the outer end portion which is about 5 mm from the outer end is discarded. Therefore, conventionally,
Product yield was poor and production efficiency was poor. Accordingly, an object of the present invention is to provide a CVD thin film forming apparatus as described above, wherein the thickness of the thin film formed on the peripheral portion of the substrate does not greatly differ from the thickness of the thin film formed on the substrate, and is formed on almost the entire substrate. It is an object of the present invention to obtain a CVD thin film forming apparatus which can use a manufactured product, has a good yield, and has a high production efficiency.
【0004】[0004]
【課題を解決するための手段】この目的を達成するため
の本発明によるCVD薄膜形成装置の構成の特徴は、基
板の半径をR1、基板保持台の半径をR2とした場合
に、R2/R1を2以上に設定してあることにあり、そ
の作用・効果は次の通りである。The feature of the structure of the CVD thin film forming apparatus according to the present invention for achieving this object is that when the radius of the substrate is R1 and the radius of the substrate holder is R2, R2 / R1 Is set to 2 or more, and the operation and effect are as follows.
【0005】[0005]
【作用】つまり、基板の半径と基板保持台の径の関係を
2以上に採ることにより、基板上部より拡散流下される
原料ガスは、従来より、基板の膜形成面に沿った拡散を
おこなうこととなる。結果、基板上の膜形成状態は、そ
の端縁部位の状態が中央近傍の状態に近ずく(両部位に
於ける差がなくなる)。従って、基板端縁部に形成され
る薄膜と、中央部付近のものとの厚みの差が解消され
る。この結果の一例を図2、図3、図4に示した。図に
は横軸にR2/R1が、縦軸に端縁部の膜厚δeと成膜
厚δcの比が示されている。同図からも明らかなように
R2/R1を2以上とすると、端縁部の膜厚δeと成膜
厚δcの比が3%以下となり一般的な許容基準を満た
す。In other words, by setting the relationship between the radius of the substrate and the diameter of the substrate holding table to be two or more, the source gas diffused down from the upper portion of the substrate is conventionally diffused along the film forming surface of the substrate. Becomes As a result, in the state of film formation on the substrate, the state of the edge portion approaches the state near the center (there is no difference between the two portions). Therefore, the difference in thickness between the thin film formed on the edge of the substrate and the film near the center is eliminated. One example of this result is shown in FIGS. 2, 3 and 4. In FIG R2 / R1 in the horizontal axis is the ratio of the thickness of the edge portion on the vertical axis [delta] e and NarumakuAtsu [delta] c is shown. When clearly seen R2 / R1 to 2 or more from the figure, the ratio of the thickness [delta] e and NarumakuAtsu [delta] c of edge satisfies the general acceptance criteria becomes 3% or less.
【0006】[0006]
【発明の効果】従って、基板中心と外周部との膜厚との
差を3%以内に抑えることが可能となり、従来廃棄して
いた端縁近傍部のものについても良品として取り扱うこ
とが可能となり、外周部全部を使用可能となって製品の
歩留りが向上した。As a result, the difference between the thickness of the substrate and the thickness of the outer peripheral portion can be suppressed to within 3%, and the portion near the edge which has been discarded conventionally can be handled as a good product. As a result, the entire outer peripheral portion can be used, thereby improving the product yield.
【0007】[0007]
【実施例】本願の実施例を図面に基づいて説明する。図
1に本願のCVD薄膜形成装置1の構成が示されてい
る。このCVD薄膜形成装置1は、所謂レーザーCVD
薄膜形成装置であり、加熱体により供給される熱エネル
ギーと、レーザー光によって供給される光エネルギーに
より原料ガスの励起・膜形成がおこなわれる。このレー
ザーCVD薄膜形成装置は、従来の単純なCVD薄膜形
成装置より低温で膜形成をおこなうことが可能であるた
め、基板等に熱的ダメージを与えること少なく、良質な
膜形成が行える利点がある。以下に、半導体(IC、L
SI等)基板4上に、薄膜層6を形成する場合を例に採
って説明する。ここで、基板4はシリコン基板を例にと
るものとし、この基板4上に絶縁膜あるいは不動態化膜
である酸化シリコンの薄膜6を形成するものである。An embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a configuration of a CVD thin film forming apparatus 1 of the present application. This CVD thin film forming apparatus 1 is a so-called laser CVD.
This is a thin film forming apparatus, in which heat gas supplied by a heating element and light energy supplied by a laser beam excite a source gas and form a film. Since this laser CVD thin film forming apparatus can form a film at a lower temperature than a conventional simple CVD thin film forming apparatus, there is an advantage that a high quality film can be formed without causing thermal damage to a substrate or the like. . Below, semiconductors (IC, L
An example in which the thin film layer 6 is formed on the substrate 4 will be described. Here, the substrate 4 is a silicon substrate as an example, and a thin film 6 of silicon oxide which is an insulating film or a passivation film is formed on the substrate 4.
【0008】装置1の構成は、概ね従来例において説明
した構成と同様である。従来と本願発明の構成との差異
は、基板4の径に対する基板保持台7の径の比であり、
本願においてはこれが大きくとられている。実際の数値
について説明すると、 基板の径 5インチ(127mm) 円筒部材の内径 350mm 基板保持台の径 10インチ(254mm) ノズルの径 6mm ノズル吹き出し部と前記基板との離間距離 60〜10
0mm とされている。ここで、好ましい範囲としては、基板4
の径と基板保持台7の径と円筒部材1cの内径の比が
1:2:2.5〜3の範囲で、ノズル2aから流下する
原料ガス(g)の線速度が450〜800cm/min
である。The configuration of the device 1 is substantially the same as the configuration described in the conventional example. The difference between the conventional and the present invention is the ratio of the diameter of the substrate holding table 7 to the diameter of the substrate 4,
This is taken largely in the present application. To explain the actual numerical values, the diameter of the substrate is 5 inches (127 mm), the inner diameter of the cylindrical member is 350 mm, the diameter of the substrate holder is 10 inches (254 mm), the diameter of the nozzle is 6 mm, and the separation distance between the nozzle blowing portion and the substrate is
0 mm. Here, as a preferable range, the substrate 4
And the linear velocity of the raw material gas (g) flowing down from the nozzle 2a is 450-800 cm / min when the ratio of the diameter of the substrate holding table 7 to the inner diameter of the cylindrical member 1c is in the range of 1: 2: 2.5-3.
It is.
【0009】以下に本願の装置1を使用して、基板4上
に薄膜6を形成する状態について説明する。この薄膜形
成室1a内は抵抗加熱体8により約350℃程度の温度
域に保持され、原料ガス供給部2の先端に配設されたノ
ズル2aより原料ガスgとしてのSiH4及びN2Oが供
給される。原料ガスのトータル流量は60〜100cc
/min(N2キャリアーガスを含む)程度である。こ
の原料ガスgはノズルから基板上部域4aに拡散流下す
る。そして、この原料ガスgはこの部位4aにおいて、
抵抗加熱体8によりエネルギーの供給を受ける。一方、
レーザー光照射用窓10より入射するレーザー光9から
もエネルギーの供給を受ける。結果、この基板上部位4
aで励起されるとともに、解離し、初期の段階において
は核として基板4上に落下し、核形成が終了するとこの
核を中心として基板4上でSiO2膜となって成長す
る。このようにして基板4上における膜生成を完了する
ことができる。A state in which a thin film 6 is formed on a substrate 4 using the apparatus 1 of the present invention will be described below. The inside of the thin film forming chamber 1a is maintained in a temperature range of about 350 ° C. by a resistance heating element 8, and SiH 4 and N 2 O as source gas g are supplied from a nozzle 2a provided at the tip of the source gas supply unit 2. Supplied. Total flow rate of raw gas is 60-100cc
/ Min (including N 2 carrier gas). The source gas g diffuses and flows down from the nozzle to the substrate upper region 4a. And this raw material gas g at this part 4a
Energy is supplied by the resistance heating element 8. on the other hand,
Energy is also supplied from the laser light 9 incident from the laser light irradiation window 10. As a result, this site 4 on the substrate
Excited by a, it is dissociated, and falls on the substrate 4 as a nucleus in an initial stage. When the nucleation is completed, the nucleus is grown as a SiO 2 film on the substrate 4 around the nucleus. Thus, the film formation on the substrate 4 can be completed.
【0010】〔別実施例〕本願の別実施例について以下
に箇条書きする。 (イ)上記の実施例においては、レーザー光9を原料ガ
スの励起・解離手段として使用するレーザーCVD装置
に、本願の発明の構成を採用する場合を示したが、本願
の発明は、熱エネルギーを原料ガス等に供給して薄膜を
形成するものに対しては、いかなるものに対しても適応
することができる。こういったものの例としては、単な
る熱CVD装置がある。 (ロ)上記の実施例においては、Si基板上にSiO2
膜を形成する例について説明したが、原料ガスとして、
(SiH4 NH3)、(Si2H6 NH3)を一対とし
て使用して、SiN膜を形成する場合についても、本願
の構成を採用することが可能である。[Another Embodiment] An embodiment of the present invention will be described below. (B) In the above embodiment, the case where the configuration of the present invention is applied to the laser CVD apparatus using the laser beam 9 as the means for exciting and dissociating the source gas has been described. Can be applied to any material that supplies a raw material gas or the like to form a thin film. An example of such is a simple thermal CVD apparatus. (B) In the above embodiment, SiO 2 was deposited on the Si substrate.
Although an example of forming a film has been described, as a source gas,
The configuration of the present application can also be adopted when forming a SiN film using (SiH 4 NH 3 ) and (Si 2 H 6 NH 3 ) as a pair.
【0011】尚、特許請求の範囲の項に図面との対照を
便利にするために符号を記すが、該記入により本発明は
添付図面の構成に限定されるものではない。In the claims, reference numerals are provided for convenience of comparison with the drawings, but the present invention is not limited to the configuration shown in the attached drawings.
【図1】本願のCVD薄膜形成装置の構成を示す図FIG. 1 is a diagram showing a configuration of a CVD thin film forming apparatus of the present invention.
【図2】本願の条件によって形成される膜の状態を示す
図FIG. 2 is a diagram showing a state of a film formed under the conditions of the present application.
【図3】従来の条件によって形成される膜の状態を示す
図FIG. 3 is a diagram showing a state of a film formed under conventional conditions.
【図4】半径比と膜厚の関係を示す説明図FIG. 4 is an explanatory diagram showing a relationship between a radius ratio and a film thickness.
【図5】従来のCVD薄膜形成装置の構成を示す図FIG. 5 is a diagram showing a configuration of a conventional CVD thin film forming apparatus.
1b 蓋部 1c 円筒部材 2a ノズル 4 基板 6 薄膜 7 基板保持台 7a 基板保持面 9 レーザー光 g 原料ガス g1 拡散流下路 g2 排出路 1b Lid 1c Cylindrical member 2a Nozzle 4 Substrate 6 Thin film 7 Substrate holding table 7a Substrate holding surface 9 Laser beam g Raw material gas g1 Diffusion down flow g2 Exhaust flow
───────────────────────────────────────────────────── フロントページの続き (72)発明者 森川 茂 京都府京都市下京区中堂寺南町17 株式 会社関西新技術研究所内 (56)参考文献 特開 平4−221078(JP,A) 実開 平3−38357(JP,U) 実開 平2−146423(JP,U) (58)調査した分野(Int.Cl.7,DB名) C23C 16/00 - 16/56 H01L 21/205 H01L 21/31 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Shigeru Morikawa 17 Kando-ji Minamicho, Shimogyo-ku, Kyoto-shi, Kyoto Inside Kansai New Technology Research Institute Co., Ltd. (56) References JP-A-4-221078 3-38357 (JP, U) JP-A-2-146423 (JP, U) (58) Field surveyed (Int. Cl. 7 , DB name) C23C 16/00-16/56 H01L 21/205 H01L 21 / 31
Claims (2)
板保持台(7)上に保持される円盤状の基板(4)に対
し、前記基板(4)の上部から前記基板(4)に向かう
原料ガス(g)の拡散流下路(g1)と、前記基板保持
台(7)の側部よりその下方に向かう原料ガス(g)の
排出路(g2)とを備え、前記基板(4)に対してほぼ
平行に、且つ前記基板(4)の近傍にレーザー光(9)
を照射して、前記基板(4)上に薄膜(6)を形成する
CVD薄膜形成装置であって、前記基板(4)の半径を
R1、前記基板保持台(7)の半径をR2とした場合
に、R2/R1を2以上に設定してあるCVD薄膜形成
装置。1. A disk-shaped substrate (4) held on a substrate holding table (7) having a substantially circular substrate holding surface (7a), from above the substrate (4). ) And a discharge path (g2) for the source gas (g) directed downward from the side of the substrate holding table (7). A laser beam (9) substantially parallel to 4) and near the substrate (4);
And forming a thin film (6) on the substrate (4), wherein the radius of the substrate (4) is R1, and the radius of the substrate holder (7) is R2. In some cases, R2 / R1 is set to 2 or more.
断面を前記基板保持面(7a)とされる円柱部材で構成
され、これと同芯に配設されるとともに、且つ蓋部(1
b)を備えた円筒部材(1c)に前記基板保持台(7)
が収納されて薄膜形成室(1a)が構成されるととも
に、前記蓋部(1b)の中央に前記原料ガス(g)を薄
膜形成室(1a)に導入するノズル(2a)が備えら
れ、 基板(4)の径と基板保持台(7)の径と円筒部材(1
c)の内径の比が1:2:2.5〜3で、ノズル(2
a)から流下する原料ガス(g)の線速度が450〜8
00cm/minである請求項1記載のCVD薄膜形成
装置。2. The substrate holding table (7) is formed of a columnar member having an upper cross section perpendicular to an axis and serving as the substrate holding surface (7a). (1
b) a cylindrical member (1c) provided with
And a nozzle (2a) for introducing the source gas (g) into the thin film formation chamber (1a) is provided at the center of the lid (1b). (4) Diameter of substrate holding table (7) and cylindrical member (1)
The ratio of the inner diameter of c) is 1: 2: 2.5 to 3, and the nozzle (2)
The linear velocity of the raw material gas (g) flowing down from a) is 450 to 8
2. The CVD thin film forming apparatus according to claim 1, wherein the pressure is 00 cm / min.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03298870A JP3111096B2 (en) | 1991-11-14 | 1991-11-14 | CVD thin film forming equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03298870A JP3111096B2 (en) | 1991-11-14 | 1991-11-14 | CVD thin film forming equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05140749A JPH05140749A (en) | 1993-06-08 |
JP3111096B2 true JP3111096B2 (en) | 2000-11-20 |
Family
ID=17865256
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP03298870A Expired - Fee Related JP3111096B2 (en) | 1991-11-14 | 1991-11-14 | CVD thin film forming equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3111096B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6564592B2 (en) | 1999-06-24 | 2003-05-20 | Ispo-Usa, Inc. | Control system for measuring load imbalance and optimizing spin speed in a laundry washing machine |
-
1991
- 1991-11-14 JP JP03298870A patent/JP3111096B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6564592B2 (en) | 1999-06-24 | 2003-05-20 | Ispo-Usa, Inc. | Control system for measuring load imbalance and optimizing spin speed in a laundry washing machine |
Also Published As
Publication number | Publication date |
---|---|
JPH05140749A (en) | 1993-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5344492A (en) | Vapor growth apparatus for semiconductor devices | |
US5259883A (en) | Method of thermally processing semiconductor wafers and an apparatus therefor | |
TW308706B (en) | ||
JPS60186013A (en) | Induction heating reactor for chemical deposition | |
US4888302A (en) | Method of reduced stress recrystallization | |
JP3111096B2 (en) | CVD thin film forming equipment | |
US4290385A (en) | Vertical type vapor-phase growth apparatus | |
JPH05267182A (en) | Chemical vapor deposition system | |
JP3065760B2 (en) | Optical CVD equipment | |
JP3157241B2 (en) | Optical CVD equipment | |
JPH0530350Y2 (en) | ||
JPH07147248A (en) | Gas discharge nozzle of cvd device | |
JP3065731B2 (en) | Optical CVD equipment | |
JPH0562908A (en) | Substrate supporting stand for cvd thin film forming device | |
JPH05140753A (en) | Laser cvd thin film forming apparatus | |
JP3357219B2 (en) | Method and apparatus for forming silica-based coating | |
JPH06283435A (en) | Method of forming amorphous silicon film by plasma cvd | |
JPS5979531A (en) | Forming method of thin-film | |
US5449545A (en) | Ceramic device | |
JPH0544823B2 (en) | ||
JPS60253212A (en) | Vapor growth device | |
JPH06216033A (en) | Chemical vapor growth device for semiconductor | |
JPH0559556A (en) | Substrate holding stand of cvd thin film forming device | |
JP2551753B2 (en) | Photo CVD equipment | |
JPH0629231A (en) | Method and apparatus for glow discharge |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080914 Year of fee payment: 8 |
|
LAPS | Cancellation because of no payment of annual fees |