JP3108492B2 - Resistor chip - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistor chip such as a thermistor chip.

[0002]

[Prior art]

A thermistor is a temperature sensor or a temperature compensating element utilizing the temperature dependence of the electric resistance of a temperature-sensitive resistor, and is widely used for temperature measurement, temperature control, and the like. Particularly for high temperature applications, they are used, for example, in automobile exhaust gas temperature detection sensors and oil / gas combustion control sensors.

As a material for a temperature-sensitive resistor chip (thermistor chip) of a thermistor element for high temperature, since it shows a stable electric resistance value at high temperature, for example, Japanese Unexamined Patent Publication No. 64420/1988.
It is known that a sintered body having a conductive path made of silicon carbide or boron carbide as described in JP-A No. 2 is preferred.

A resistor chip such as a thermistor element or the like usually has a configuration as shown in FIG. The resistor chip shown in the figure has a chip main body 101 and electrodes 202 provided on the side surfaces thereof with the chip main body 101 interposed therebetween. In the illustrated example, the electrode 202 is connected to the chip body 101.
Is formed to cover both ends.

In a resistor chip, when soldered to a substrate such as glass epoxy or alumina, the electrode 202 may peel off from the chip body 101 due to a difference in thermal expansion coefficient or the like. Since the resistance value of the resistor chip is determined by the distance between the opposing electrodes, if the distance between the electrodes changes due to peeling or deformation of the electrodes, the resistance value changes.

[0007]

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and an object of the present invention is to provide a resistor chip capable of preventing a change in resistance value due to separation of an electrode or the like.

[0008]

This and other objects are achieved by the present invention which is defined below as (1) to (8). (1) a chip body, an external electrode comprising a first external electrode and a second external electrode respectively provided on the surface of the chip body, and the chip being electrically connected to the first external electrode and facing the second external electrode; An internal electrode consisting of a second internal electrode extending into the chip body toward the first external electrode and conducting to the first internal electrode and the second external electrode extending into the main body; One internal electrode and the second internal electrode are provided in a hole and / or a groove formed in the chip main body, a distance between the first internal electrode and the second internal electrode is a, A <b, where b is a distance between an external electrode and the second external electrode. (2) The resistor chip according to the above (1), wherein the first internal electrode and / or the second internal electrode includes a plurality of electrodes. (3) The resistor chip according to (1) or (2), wherein the first internal electrode and the second internal electrode are conical. (4) The resistor chip according to any one of (1) to (3), wherein the internal electrode is provided in a hole and / or a groove formed in the chip body by laser processing. (5) The resistor chip according to any one of (1) to (4), wherein the chip body contains boron carbide. (6) the chip body contains boron carbide or boron carbide and silicon carbide as a conductive path forming substance;
The resistor chip according to any one of the above (1) to (5), which is a sintered body further containing, as a matrix material, an oxide of at least one element selected from Al, Si and Group 2A elements. (7) The chip body is a sintered body containing boron carbide as a conductive path forming substance, and is sintered by adding titanium carbide and / or titanium boride to boron carbide in an amount of 2% by weight or less in terms of titanium element. The resistor chip according to any one of the above (1) to (5), which is tied. (8) The resistor chip according to any one of (1) to (7), wherein the external electrode and the internal electrode are formed by a plating method or a thick film method.

[0009]

[0010]

[0011]

[0012]

[0013]

[0014]

[0015]

[0016]

[0017]

As shown in FIG. 1A, the resistor chip of the present invention comprises a first external electrode 112 and a second external electrode 1.
22 and an internal electrode including a first internal electrode 113 and a second internal electrode 123. Each internal electrode is electrically connected to one external electrode and extends into the chip body 101 toward the other external electrode. The distance a between the internal electrodes is smaller than the distance b between the external electrodes.

The resistance value of the resistor chip is highly dependent on the shortest inter-electrode distance, that is, the distance a between the internal electrodes.
In addition, the internal electrodes are located in holes formed in the chip body and / or
Alternatively, since the distance between the electrodes hardly fluctuates because of the presence in the groove, the resistance value of the resistor chip of the present invention does not change even if the distance between the external electrodes fluctuates due to separation or the like of the external electrodes. Almost no.

[0019]

[Specific Configuration] Hereinafter, a specific configuration of the present invention will be described in detail. A cross-sectional view of a preferred embodiment of the resistor chip of the present invention is shown in FIG. As shown in the figure, the resistor chip of the present invention has a chip main body 101 and external electrodes including a first external electrode 112 and a second external electrode 122 provided on the surface of the chip main body 101, respectively. In addition, the first internal electrode 113 and the second external electrode 122 which are electrically connected to the first external electrode 112 and extend into the chip body 101 toward the second external electrode 122.
And an internal electrode formed of a second internal electrode 123 extending into the chip body 101 toward the first external electrode 112.

In the resistor chip of the present invention, when the distance between the first internal electrode 113 and the second internal electrode 123 is a, and the distance between the first external electrode 112 and the second external electrode 122 is b. , A <b. In this case, the distance between the electrodes is the shortest distance as shown.

With such a configuration, it is possible to suppress a change in the resistance value due to a change in the shape of the external electrode as described above. In order to sufficiently suppress the change in the resistance value, it is preferable that a ≦ 1.5b, although it depends on the shape and dimensions of the external and internal electrodes.

The shape of the internal electrode is not particularly limited. For example, the internal electrode shown in FIG.
The shape is not limited to the illustrated example, such as a columnar shape, a prismatic shape, and a plate shape, and may be any shape. Further, the side end surfaces of the internal electrodes may be exposed on the surface of the chip body 101.

There is no particular limitation on the number of internal electrodes. For example, as shown in FIG. 1A, at least one of the first internal electrode and the second internal electrode may be composed of a plurality of electrodes. In this case, the electrodes may be arranged in a row or in a grid.

There is no particular limitation on the length of the internal electrode projecting into the chip body.

The composition of the resistor constituting the chip body is not particularly limited. For example, various resistor materials and thermistor materials containing silicon carbide or boron carbide as a main component, or
Further, a Mn-Ni-based composite oxide, a spinel-based oxide,
Various composite oxide sintered bodies such as Al ₂ O ₃ -based oxides can also be used. However, the present invention is particularly suitable for a high-temperature resistor, such as a high-temperature thermistor, which is easily exposed to a drastic temperature change and is likely to cause peeling of the external electrode. Also, it is necessary to provide holes and grooves in the chip body when forming internal electrodes,
When this processing is performed by a laser beam as described later, it is difficult to cause a change in resistance value due to heating.
It is preferably applied to a high-temperature resistor.

As a high-temperature resistor material, a material containing boron carbide is preferable. Specifically, for example, a thermistor material described in JP-A-64-64202, that is, containing boron carbide or boron carbide and silicon carbide as a conductive path forming substance, and further containing A
at least one selected from l, Si, and a Group 2A element
A thermistor material containing an oxide of a certain element as a matrix substance can be preferably used. Also, a thermistor material disclosed in Japanese Patent Application No. 2-74355, that is, a sintered body containing boron carbide as a conductive path forming substance, wherein titanium carbide and / or titanium boride is added to titanium with respect to boron carbide A thermistor material added and sintered at 2% by weight or less in terms of element can also be preferably used. Alternatively, other various thermistor materials and resistor materials as disclosed in Japanese Patent Application No. 3-49123 may be used.

The dimensions of the chip body depend on the intended circuit and E
What is necessary is just to determine suitably according to various standards, such as IAJ, There is no restriction | limiting in particular, Usually, it is made into a rectangular parallelepiped shape, and 1.0-2.0
mm, 1.5 to 4.0 mm in width, and 0.1 to 1.2 mm in height.

The method for manufacturing the resistor chip of the present invention is not particularly limited. For example, it is preferable to use the method described below.

For the production of the resistor, a usual method according to the composition may be used. For example, in the case of a resistor containing boron carbide, after various types of raw material powders are wet-mixed, the mixture is molded under pressure at room temperature, and is subjected to a normal pressure sintering method and a hot press ( HP) sintering method,
After sintering the compact by hot isostatic pressure (HIP) or the like, it is allowed to cool to obtain a resistor.

Next, the resistor is processed into a predetermined shape and dimensions, and formed into chips. For processing for chip formation, a method of mechanically cutting with a dicing saw or the like may be used, or laser processing described later may be used.

Next, holes and grooves having a predetermined shape and dimensions are formed in the chip to form internal electrodes, thereby obtaining a chip body. Such holes and grooves may be formed by a mechanical grinding means such as a dicing saw, but when a resistor containing boron carbide is used, it is preferable to use laser processing.

In the case where holes are formed by laser processing, chips may be arranged and their surfaces may be scanned with pulsed laser light. In the case of forming a groove, continuous wave laser light may be applied.

When a hole is formed, the diameter of the opening is not particularly limited and may be appropriately determined according to the chip size and the like, and is usually about 50 to 300 μm.

Although the shape of the hole varies depending on the focal position, focal length, irradiation energy, etc. of the condensing lens of the laser beam, in the present invention, it is preferable that the hole has a conical shape. In order to form a conical hole, it is preferable that the focal position of the condenser lens is set closer to the inside of the chip than the processing surface.

The depth of the conical hole is about 3 to 5 times the diameter of the conical hole, depending on the focal length of the condenser lens.

The laser light source used in the present invention is not particularly limited, and may be appropriately selected from various gas lasers and various semiconductor lasers, such as a carbon dioxide gas laser and a YAG laser. However, it is preferable to use a pulsed laser because the influence of heat on the chip is small. The irradiation energy of the laser beam may be appropriately determined according to the size of the hole or groove to be formed.

The chipping of the resistor and the formation of holes and grooves for internal electrodes may be performed simultaneously. The chip formation of the resistor is usually performed by cutting a columnar sintered body into a thin plate and cutting it, or by cutting a thin plate-shaped sintered body. Although it depends on the shape and dimensions of the chip, the electrodes are usually provided on the cut surface when the thin plate is cut. However, when the electrodes are provided on the main surface of the thin plate, chip formation and formation of holes, grooves, and the like can be performed simultaneously.

In this case, chip formation and grooving may be performed simultaneously by a mechanical grinding means such as a dicing saw, but it is preferable to use laser processing for high-speed processing.

In the case of using laser processing, the resistor may be cut by irradiating a laser beam. However, this requires enormous energy, and the effect of heat on the resistor becomes a problem. Therefore, it is preferable to use a method of forming a hole, a through hole, a groove, or the like by laser light irradiation to weaken the thin plate, and then applying a mechanical external force to the thin plate to break the vicinity of the weak portion to form a chip.

The holes and grooves for the internal electrodes can be formed at the same time as the formation of the fragile portions by irradiating a laser beam. The groove is made shallower than the hole or groove for breakage, for example, so that a breakage does not occur at the position of the hole or groove for the internal electrode when a mechanical external force is applied.

The means for applying the mechanical external force is not particularly limited, and any means capable of breaking the above-mentioned fragile portion may be appropriately selected. For example, a method of pressing a resistor thin plate with an elastic member is preferable.

More specifically, a pair of rollers having at least surfaces having elasticity are opposed to each other, and the resistor thin plate is passed between these rollers so that pressure is applied to the resistor thin plate. As a result, the resistor thin plate is broken in the vicinity of the fragile portion and is chipped. The roller may be a rigid core material covered with an elastic material such as rubber, or the entire roller may be formed of an elastic material such as rubber. Alternatively, only one of the rollers may have an elastic surface. The pressure applied to the resistor thin plate may be appropriately determined according to the configuration of the fragile portion. By using such a method, it is possible to break quickly and to reduce the mechanical impact on the resistor thin plate.

In addition, the fragile portion can be broken by applying a thermal shock.

In the chip body thus manufactured,
Form external and internal electrodes. In the present invention, the constituent material of the electrode is not particularly limited, and may be appropriately selected from the electrode structure of a resistor chip such as a normal thermistor chip.
For example, the material of the electrode is mainly composed of Ag,
It may be appropriately selected from those mainly composed of Pd, those mainly composed of Ag and Pd, those mainly composed of Ni and those mainly composed of Au. The method for forming the electrode is not particularly limited, and may be appropriately selected from various thick film methods and various thin film methods such as an electroless plating method.

When an electrode is formed by a thick film method, it is preferable to use Ni as a conductive material for a resistor containing boron carbide, and it is preferable to use a glass fritless paste.

The electrode may be composed of two or more conductive layers having different compositions. For example, a first conductive layer having a Pd content of 50% or more and 100% or less and a balance of substantially Ag is provided on the resistor surface, and Pd is formed on the first conductive layer.
Is provided with a second conductive layer having a content of 0% or more and less than 50%, and the balance being substantially Ag, to form an electrode having both good solder wettability and heat resistance.

An electrode formed by the thick film method may be dissolved in solder at the time of soldering, and this is known as a solder crack. In order to prevent such solder cracking, it is preferable to form a solder plating film such as Ni or Sn on the surface of the electrode.

Further, in order to improve the solder wettability of the electrode formed by the thick film method, it is preferable to form a conductive plating film for improving solder wettability, such as a Sn—Pb alloy, on the electrode. It is more preferable that the conductive plating film for preventing solder cracking and the conductive plating film for improving solder wettability are formed in this order.

The solder wettability can also be improved by firing the thick film electrode and then performing an imidazole treatment.

When the electrode is formed by a plating method, the electrode material may be Ni, Ni-B, Ni-P, Ni-W,
It may be appropriately selected from Cr, Au, Pd and the like generally used for chip thermistors and the like.

When electrodes are formed by a thick film method, an electroless plating method, or the like, when an external electrode is formed, an electrode material penetrates into a hole or a groove in the chip body, and an internal electrode is simultaneously formed. When the external electrode has a multilayer structure of two or more layers, the internal electrode is usually made of the lowermost electrode material as shown in FIG.

Before forming the electrodes, it is preferable to perform a general surface activation treatment on the surface of the chip body.

In the present invention, since the internal electrodes extend inside the chip body, the adhesion of the entire electrode to the chip body is extremely good. However, before plating, at least the electrode forming portion of the chip body surface is roughened. Then, the adhesion of the electrode is further improved. There is no particular limitation on the method of roughening,
It is preferable to use a chemical etching method, and a wet method using an alkali or the like, a molten salt method, a reverse sputtering method, or the like may be used. For example, good surface roughening can be performed by immersion in an alkali molten salt. In this case, it is preferable to use a Na-based salt as the alkali molten salt, and it is particularly preferable to use NaOH. There are no particular restrictions on various conditions such as processing temperature and processing time, and they may be appropriately selected according to the composition of the resistor to be processed. In addition, chemical etching using various acids such as hydrochloric acid and sulfuric acid is also suitable. Further, the surface can be roughened by dry etching such as plasma etching or sand blasting. The degree of surface roughening can be confirmed with a scanning electron microscope or the like.

When an electrode is formed by plating on the surface thus roughened, the material constituting the electrode penetrates into minute recesses or pores on the surface of the resistor formed by the surface roughening. Therefore, a mixed layer in which both the electrode constituent material and the resistor constituent material are present is formed between the electrode and the resistor. In this case, the electrode is a portion that is substantially continuous and does not include a resistor constituent material. Being substantially continuous means that there may be discontinuous portions due to film defects such as pinholes. In this case, the resistor is a portion where no electrode constituent material exists. Such a mixed layer can be observed with a scanning electron microscope or the like, and an electron probe microanalyzer (EPM).
A) can be confirmed. The magnification at this time may be, for example, about 500 to 5000 times.

The formation of an electrode by plating is usually performed as follows.

First, as shown in FIG. 2A, an electrode plating film 102 is formed on the entire surface of the chip body 101. Further, if necessary, as shown in FIG. 2B, a conductive plating film 103 for improving solder wettability, such as a Sn—Pb alloy, is formed on the surface of the plating film 102 for an electrode.

Next, as shown in FIG. 2C, a protective film 10 made of a resist or the like is formed in a region where an electrode is to be formed.
4 is formed by a printing method or the like. The resist used for the protective coating 104 may be appropriately selected from commercially available ordinary resists.
For example, a resin composed of an acrylic resin, an acetate or petroleum-based solvent, and a chemical resistant agent can be used.

After the formation of the protective film 104, the conductive plating film 103 and the electrode plating film 102 are removed by immersion in phosphoric acid, nitric acid, hydrochloric acid or a mixture thereof as shown in FIG. I do. At this time, in a region covered with the protective film 104, the conductive plating film 103
Since the electrode plating film 102 is not removed, the first external electrode 112 and the first internal electrode 113 and the second external electrode 122 and the second internal electrode 123 are obtained.

Then, a solvent such as acetone or 2-3% N
The protective film 104 is immersed in an aOH aqueous solution or the like to remove the protective film 104 as shown in FIG.

By such a process, for example, FIG.
A resistor chip 105 having electrodes of a desired shape, such as electrodes shaped to cover the vicinity of both ends of the resistor as shown in FIG.

After forming the electrodes by the plating method,
An imidazole treatment may be performed to improve solder wettability. In this case, it is not necessary to form a conductive plating film for improving solder wettability such as an Sn-Pb alloy.

When the base material of the resistor comes into contact with the plating solution, such as when a conductive plating film for preventing solder tearing or a conductive plating film for improving solder wettability is formed on the electrode formed by the thick film method. In some cases, the substrate surface of the resistor may be dissolved in the plating solution, or the plating solution may penetrate from the substrate surface, resulting in a problem that the resistance value is significantly changed. In order to prevent such a problem, a method of baking and coating the resistor surface with glass may be used, but the resistance value changes when the glass is baked, or the glass itself becomes a resistor, so that trimming is performed. For example, it is necessary to adjust the resistance value.

Therefore, when a conductive plating film is provided on the electrode surface, it is preferable to form a conductive coating film after forming a protective film such as a resin on the base surface of the resistor excluding the electrodes. In this case, in order to form the protective film except for the electrode surface, screen printing or printing using a rotating roller may be used, but it is preferable to use the following method.

First, in the first method, a paint is applied on the electrode formed on the resistor, and then a resin film is formed on the base surface of the resistor. Then, the paint is removed to form a conductive plating film. Form.

In the first method, as shown in FIG. 3A, the first external electrode 112 and the first internal electrode 113
And the chip main body 101 on which the second external electrode 122 and the second internal electrode 123 are formed.

Next, as shown in FIG. 3B, for example, a gloss paint 6 is applied on the external electrodes. Next, in this state, a protective film of a resist agent made of a synthetic resin or the like is applied to the entire resistor. The application of the resist agent may be performed by dipping or the like. At this time, as shown in FIG. 3C, the protective film 104 made of a resist material is
01, the resist agent is repelled by the glossy paint 6, so that no protective film is formed on the glossy paint 6. Next, as shown in FIG. 3D, only the luster paint 6 is removed, and in this state, it is immersed in a plating solution to form a conductive plating film 103 as shown in FIG. 3E. Thereafter, the protective coating 104 is removed to obtain a resistor chip 105 as shown in FIG.

In the second method, after the electrodes are formed, a masking tape for preventing the plating solution from penetrating is adhered to the surface of the resistor body, and then a conductive plating film is formed.

In the second method, as shown in FIG. 4A, the first external electrode 112 and the second external electrode 1 are provided at both ends.
A chip main body 101 on which 22 is formed is prepared. In addition,
Although not shown, a first internal electrode and a second internal electrode are provided in the chip body.

Next, as shown in FIG. 4B, for example, a masking tape 13 made of polyester is applied to the chip body 1.
No. 01 is attached so as to cover the substrate surface 101a, and a large number of chip bodies 101 are connected. Next, after being immersed in a plating solution in the state shown in FIG. 4B to form a conductive plating film 103 on the surface of the external electrode, the masking tape 13 is peeled off, and the resistance as shown in FIG. The body chip 105 is obtained.

By using these first and second methods, the rate of change in resistance before and after the formation of the conductive plating film can be significantly reduced. For example, when the conventional method is used, the resistance change rate may be about 35%, but by using each of the above methods, the resistance change rate can be reduced to about 2%.

When the electrodes are formed by plating, the entire chip body is immersed in a plating solution, so that a plating film is formed on the entire chip body as shown in FIG.
It is necessary to remove the plating film in a region other than the electrode later.
In addition, when forming the plating film, the resistor body of the chip body is easily damaged by the plating solution. Therefore, before forming the electrodes by plating, the resistor body is protected by using a protective film as shown in FIG. 3 or a masking tape as shown in FIG. It is preferable not to do so. If a conductive plating film for preventing solder cracking or a conductive plating film for improving solder wettability is further formed on the electrode formed by the plating method, remove the protective film and masking tape after forming all plating films. I do.

The thickness of the electrode is usually 0.1 to 50 μm,
In particular, the thickness is preferably 1 to 10 μm. If the thickness is less than the above range, it is difficult to form a uniform electrode, and a thickness exceeding the above range is unnecessary. The thickness of the conductive plating film formed on the electrode is 0.1 to 50 μm.
It is preferred that it is about.

The resistor chip manufactured according to the present invention is provided with a lead or the like as necessary, and is used as various thermistor elements or resistor elements.

When the present invention is applied to a high temperature thermistor element or the like, the chip is sealed with glass or a heat resistant coating is provided on the chip surface as necessary.

[0075]

EXAMPLES Hereinafter, the present invention will be described in more detail by showing specific examples of the present invention. The following raw material powders were wet-mixed with acetone using a ball mill for 20 hours.

(Raw material powder) Al ₂ O ₃ : 86 parts by weight B ₄ C: 14 parts by weight TiO ₂ : 0.2 part by weight The obtained slurry was dried and granulated and filled in a graphite mold having an inner diameter of 77 mm. This was hot-pressed and sintered in an Ar atmosphere, cooled, processed into 50 mm x 50 mm x 0.5 mm, and then 2.0 mm x 1.25 mm x
It was chipped to 0.5 mm.

The obtained chips are arranged, and their side surfaces (a surface of 1.25 mm × 0.5 mm) are irradiated with a pulsed light of a carbon dioxide laser while scanning, and one side of each chip is irradiated with 2 μm.
A total of four holes were formed individually. The hole has an opening diameter of 20
The conical shape was 0 μm in depth and 600 μm in depth. Next, the chip was turned over, and a hole was similarly formed in the other side surface to obtain a chip body.

Next, a 10 μm-thick external electrode made of a Ni plating film was formed on the hole forming surface of the chip body by a Paloma method to obtain a thermistor chip. When this thermistor chip was cut, it was confirmed that the electrode material had penetrated into the holes and internal electrodes had been formed. In this thermistor chip, the distance a between the internal electrodes was 0.8 mm, and the distance b between the external electrodes was 2.0 mm.

For comparison, a thermistor chip having electrodes formed without forming holes in the chip body was also manufactured.

A reliability test was performed by soldering these thermistor chips to an Al ₂ O ₃ substrate and storing them at 150 ° C. for 2000 hours. As a result, the resistance change rate of the chip of the present invention in which the internal electrodes were formed was about 1/3 of that of the comparative chip.

In the thermistor chip of the present invention having the internal electrodes formed thereon, the adhesion strength of the electrodes was improved.

No change in resistance due to laser light irradiation was observed.

Further, the composition of the thermistor material was determined according to
Even when other compositions described in Japanese Patent Application Laid-Open No. 4-64202 or compositions disclosed in Japanese Patent Application Nos. 2-74355 and 3-49123 are used, holes can be formed by laser light irradiation. There was no change in resistance due to laser light irradiation.

[0084]

The resistor chip of the present invention has a pair of internal electrodes which are electrically connected to each of the pair of external electrodes, and the distance between the internal electrodes is shorter than the distance between the external electrodes. For this reason, the resistance value greatly depends on the distance between the internal electrodes, and the influence of peeling of the external electrodes and the like can be reduced.

[Brief description of the drawings]

1A is a sectional view showing a preferred embodiment of a resistor chip according to the present invention, and FIG. 1B is a sectional view showing a conventional resistor chip.

FIGS. 2A to 2F are diagrams illustrating a method of forming an electrode and a conductive plating film by a plating method.

FIGS. 3A to 3F are diagrams illustrating a method of forming a conductive plating film on an electrode.

FIGS. 4A to 4C are diagrams illustrating a method of forming a conductive plating film on an electrode.

[Explanation of symbols]

 Reference Signs List 101 chip body 101a substrate surface 102 electrode plating film 103 conductive plating film 104 protective film 105 resistor chip 112 first external electrode 113 first internal electrode 122 second external electrode 123 second internal electrode 13 masking tape

──────────────────────────────────────────────────続 き Continuing on the front page (72) Ryuichi Ogiso, Inventor TDK Corporation, 1-13-1 Nihonbashi, Chuo-ku, Tokyo (72) Inventor Shigeru Sakano 1-13-1 Nihonbashi, Nihonbashi, Chuo-ku, Tokyo Inside (72) Inventor: Nobuyuki Miki 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK Corporation (72) Inventor: Hirotsugu Nohara 1-13-1 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation (72) Inventor Masaro Taniguchi 1-13-1 Nihombashi, Chuo-ku, Tokyo Inside TDK Corporation (56) References JP-A-4-130702 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01C 7/02 G01K 7/22 H01C 1/14 H01C 17/00

Claims (8)

(57) [Claims] 1. A chip main body, an external electrode comprising a first external electrode and a second external electrode provided on a surface of the chip main body, respectively, and electrically connected to the first external electrode toward the second external electrode. Having an internal electrode consisting of a second internal electrode extending into the chip body toward the first external electrode and conducting to the first internal electrode and the second external electrode extending into the chip body, The first internal electrode and the second internal electrode are provided in a hole and / or a groove formed in the chip body, and a distance between the first internal electrode and the second internal electrode is a, Let the distance between the first external electrode and the second external electrode be b
Wherein a <b. 2. The resistor chip according to claim 1, wherein the first internal electrode and / or the second internal electrode are composed of a plurality of electrodes. 3. The resistor chip according to claim 1, wherein the first internal electrode and the second internal electrode have a conical shape. 4. The resistor chip according to claim 1, wherein the internal electrode is provided in a hole and / or a groove formed in the chip main body by laser processing. 5. The resistor chip according to claim 1, wherein said chip main body contains boron carbide. 6. The chip body contains boron carbide or boron carbide and silicon carbide as a conductive path-forming substance, and further contains, as a matrix, an oxide of at least one element selected from Al, Si and Group 2A elements. The resistor chip according to any one of claims 1 to 5, which is a sintered body contained as a substance. 7. The chip body is a sintered body containing boron carbide as a conductive path forming substance, wherein titanium carbide and / or titanium boride is added to boron carbide in an amount of 2% by weight or less in terms of titanium element. 6. The resistor chip according to claim 1, wherein the resistor chip is sintered. 8. The external electrode and the internal electrode are formed by a plating method or a thick film method.
8. The resistor chip according to any one of items 7 to 7.