JP3106486B2 - Measurement equipment for semiconductor integrated circuits - Google Patents
Measurement equipment for semiconductor integrated circuitsInfo
- Publication number
- JP3106486B2 JP3106486B2 JP02203641A JP20364190A JP3106486B2 JP 3106486 B2 JP3106486 B2 JP 3106486B2 JP 02203641 A JP02203641 A JP 02203641A JP 20364190 A JP20364190 A JP 20364190A JP 3106486 B2 JP3106486 B2 JP 3106486B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- power supply
- circuit
- supply circuit
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Testing Of Individual Semiconductor Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
- Tests Of Electronic Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路の測定装置に関し、特に内蔵
されたコンパレータ回路の電源回路に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a measuring device for a semiconductor integrated circuit, and more particularly to a power supply circuit of a built-in comparator circuit.
従来、この種の半導体集積回路(以下、ICと称する)
の測定装置は第2図に示すように、被測定装置IC1の電
源端子V1,V2,V3,V4にIC専用試験装置3の電源回路21の
出力電圧B1,B2,B3,B4の電圧を印加し、被測定IC1の出力
端子S1,S2〜Snより出力される電圧をIC専用試験装置3
のコンパレータ回路C1,C2〜Cnに接続して測定してい
た。Conventionally, this type of semiconductor integrated circuit (hereinafter referred to as IC)
As shown in FIG. 2 , the output voltage B 1 , B 2 , of the power supply circuit 21 of the IC dedicated test apparatus 3 is connected to the power supply terminals V 1 , V 2 , V 3 , V 4 of the device under test IC 1 as shown in FIG. B 3, B 4 of the voltage is applied, the output terminals S 1, S 2 ~S IC dedicated testing device a voltage output from the n 3 of the measured IC 1
Connect was measured of the comparator circuit C 1, C 2 ~C n.
IC専用試験装置3の構成は被測定IC1用の電源回路21
と、コンパレータ回路C1,C2〜Cnと、コンパレータ回路
の比較電圧Ref1,Ref2〜Refnを設定する電源回路D1,D2〜
Dnと、電源22とより構成されている。The configuration of the IC dedicated test apparatus 3 is a power supply circuit 21 for the IC 1 to be measured.
When the comparator circuit C 1, C 2 ~C n, the power supply circuit D 1 to set the comparison voltage Ref 1, Ref 2 ~Ref n of comparator circuit, D 2 ~
D n and a power supply 22.
電源回路21,D1,D2〜Dnの出力電圧B1〜B4,VO1,VO2〜VO
nはIC専用試験装置3の電圧データ1,電圧データE1,E2〜
Enで設定され、また電源22はコンパレータ回路C1,C2〜C
nと電源回路D1,D2〜Dnの電源である。Power circuit 21, D 1, D 2 output voltage of ~D n B 1 ~B 4, VO 1, VO 2 ~VO
n is the voltage data 1, voltage data E 1 , E 2 to
Set in E n, also the power supply 22 is a comparator circuit C 1, C 2 ~C
n and the power supply circuit D 1, a power source of D 2 to D n.
被測定IC1の出力端子S1,S2〜Snより出力される電圧波
形の一例を第3図に示す。An example of the voltage waveform outputted from the output terminal S 1, S 2 ~S n of the measured IC 1 shown in FIG. 3.
被測定ICの出力端子S1,S2〜Snの各電圧値をIC専用試
験装置3で測定する方法を以下に示す。被測定ICの出力
端子S1=10Vの電圧を測定するには、電源回路D1の出力
電圧VO1=11Vとする。このVO1=11Vの電圧をコンパレー
タ回路C1の比較電圧Ref1として入力する。コンパレータ
回路C1は、Ref1=11Vと被測定IC1の出力端子S1=10Vの
大小を比較する。コンパレータ回路C1の判定結果は比較
電圧Ref1よりも小となる。コンパレータ回路C1の判定結
果が小となったので、今度は、電源回路D1の出力電圧を
VO1=9Vとする。前回と同様に、このVO1=9Vの電圧をコ
ンパレータ回路C1の比較電圧Ref1に入力しコンパレータ
回路C1で、Ref1=9Vと被測定IC1の出力端子S1=10Vとの
大小を比較する場合は、コンパレータ回路C1の判定結果
は比較電圧Ref1よりも大となる。以上のようにコンパレ
ータ回路の比較電圧Ref1を変化させコンパレータ回路C1
の判定結果より被測定IC1の出力端子S1の電圧値を測定
している。The method of measuring the voltage values of the output terminals S 1, S 2 ~S n of the measured IC with IC dedicated test apparatus 3 shown below. To measure the voltage of the output terminal S 1 of the IC under test S 1 = 10 V, the output voltage VO 1 of the power supply circuit D 1 is set to 11 V. This voltage of VO 1 = 11 V is input as the comparison voltage Ref 1 of the comparator circuit C1. Comparator circuit C 1 compares the magnitude of the output terminal S 1 = 10V of Ref 1 = 11V and the measured IC 1. The determination result of the comparator circuit C 1 becomes smaller than the comparison voltage Ref 1. Since the determination result of the comparator circuit C 1 becomes small, in turn, the output voltage of the power supply circuit D 1
VO 1 = 9V. As before, the magnitude of this VO 1 = the voltage of 9V at the comparator circuit compares the voltage Ref 1 and inputted to the comparator circuit C 1 of C 1, Ref 1 = 9V output terminal S 1 = 10V of the measured IC 1 when comparing the judgment result of the comparator circuit C 1 is larger than the comparison voltage Ref 1. As described above, the comparator circuit C 1 is changed by changing the comparison voltage Ref 1 of the comparator circuit.
Measures the voltage value of the output terminal S 1 of the measured IC 1 from the result of the determination.
他の20V,30V,40Vの出力電圧値に関しても同様の方法
で測定を行っている。電源回路21,D1,D2〜DnのVSSは全
て共通にGND電位となっている。The measurement is performed in the same manner for other output voltage values of 20V, 30V, and 40V. V SS power supply circuit 21, D 1, D 2 ~D n has a all common to the GND potential.
現在のIC専用試験装置のコンパレータ回路C1,C2〜Cn
及び電源回路21,D1,D2〜Dnの電圧範囲は0〜20V程度で
あるため、被測定IC1の出力端子S1,S2〜Snから30Vある
いは40Vの出力電圧をIC専用試験装置3のコンパレータ
回路で測定しようとする場合、コンパレータ回路C1,C2
〜Cnの動作電圧範囲が20Vで入力電圧が30V,40Vである
と、比較することは不可能となる。Comparator circuit C 1 of the current IC dedicated test device, C 2 -C n
And the voltage range of the power supply circuit 21, D 1, D 2 ~D n is about 0 to 20V, IC dedicated output voltage of 30V or 40V from the output terminal S 1, S 2 ~S n of the measured IC 1 When the measurement is to be performed by the comparator circuit of the test apparatus 3, the comparator circuits C 1 and C 2
If the operating voltage range of ~ Cn is 20V and the input voltages are 30V and 40V, comparison becomes impossible.
現在、液晶駆動用ICは液晶駆動用電圧の高電圧化、液
晶駆動用端子の増大化が要求されているため、高電圧を
同時に測定できる多数のコンパレータ回路及び電源回路
を有するIC専用試験装置を必要とする。しかし、上述し
た従来の測定装置では、0〜22V程度が限界のコンパレ
ータ回路及び電源回路しか内蔵されていないため、0〜
50V等の要求のある高電圧の液晶駆動用ICの測定は、従
来のIC専用試験装置ではできないという問題があった。At present, liquid crystal driving ICs are required to have a higher voltage for driving the liquid crystal and an increase in the number of terminals for driving the liquid crystal.Therefore, a dedicated IC testing device having a large number of comparator circuits and power supply circuits capable of simultaneously measuring a high voltage is required. I need. However, in the above-described conventional measuring apparatus, only the comparator circuit and the power supply circuit whose limits are about 0 to 22 V are built in.
There is a problem that measurement of a high-voltage liquid crystal driving IC requiring a voltage of 50 V or the like cannot be performed by a conventional IC-dedicated test apparatus.
また、新規な測定装置として各測定端子に、高電圧の
コンパレータ回路及び電源回路を設けることは、液晶駆
動用ICの出力端子の増大化を考えると、非常に高価なIC
専用試験装置となってしまうという問題があった。In addition, providing a high-voltage comparator circuit and a power supply circuit at each measurement terminal as a new measurement device is an extremely expensive IC considering the increase in the number of output terminals of the liquid crystal drive IC.
There was a problem that it became a dedicated test device.
本発明の目的は高電圧の液晶駆動用ICの測定を可能と
した半導体集積回路の測定装置を提供することにある。An object of the present invention is to provide a measuring device for a semiconductor integrated circuit which can measure a high voltage liquid crystal driving IC.
前記目的を達成するため、本発明に係る半導体集積回
路の測定装置は、電圧電源回路と、コンパレータ回路
と、前記コンパレータ回路の比較電圧発生用電源回路と
を具備する半導体集積回路の測定装置において、 前記コンパレータ回路の電源電位及び前記コンパレー
タ回路の比較電圧発生用電源回路の電源電位を前記電圧
電源回路で可変するものである。In order to achieve the above object, a semiconductor integrated circuit measurement device according to the present invention is a semiconductor integrated circuit measurement device including a voltage power supply circuit, a comparator circuit, and a comparison voltage generation power supply circuit of the comparator circuit. The power supply potential of the comparator circuit and the power supply potential of the comparison voltage generation power supply circuit of the comparator circuit are varied by the voltage power supply circuit.
IC専用試験装置に内蔵したコンパレータ回路の電源
(VDD及びVSS)電位及びコンパレータの比較電圧発生用
電源回路の電源電位をIC専用試験装置の電圧電源回路で
変化させる。The power supply (V DD and V SS ) potentials of the comparator circuit built in the IC dedicated test apparatus and the power supply potential of the comparison voltage generating power supply circuit of the comparator are changed by the voltage power supply circuit of the IC dedicated test apparatus.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を示すブロック図である。 FIG. 1 is a block diagram showing one embodiment of the present invention.
図において、IC専用試験装置3の電圧電源回路21の出
力電圧B1,B2,B3,B4、は被測定IC1の入力端子V1,V2,V3,V
4に接続されている。また、被測定IC1の出力端子S1,S2
〜Snは、IC専用試験装置3のコンパレータ回路C1,C2〜C
nに接続されている。In the figure, output voltages B 1 , B 2 , B 3 , B 4 of the voltage power supply circuit 21 of the IC dedicated test apparatus 3 are input terminals V 1 , V 2 , V 3 , V 3 of the IC 1 to be measured.
Connected to 4 . In addition, output terminals S 1 and S 2 of IC 1 to be measured
SS n are the comparator circuits C 1 , C 2 CC of the IC dedicated test apparatus 3.
Connected to n .
IC専用試験装置3の構成は、電圧電源回路21と、コン
パレータ回路C1,C2〜Cnと、比較電圧Ref1,Ref2〜Refnを
設定するための電源回路D1,D2〜Dnとにより構成されて
いる。Configuration of IC dedicated test device 3 includes a voltage supply circuit 21, a comparator circuit C 1, C 2 ~C n and a power supply circuit D 1 of the order to set the comparison voltage Ref 1, Ref 2 ~Ref n, D 2 ~ It is constituted by a D n.
また、IC専用試験装置3の電圧電源回路21は、液晶駆
動の電圧と同程度の電圧を設定可能な電源回路であり、
また電源回路D1,D2〜Dnは0〜20Vを設定可能な電源回路
である。IC専用試験装置3の電圧電源回路21の出力電圧
B1〜B6は、IC専用試験装置の電圧データ1により設定す
ることができる。同様に電源回路D1,D2〜Dnの出力電圧V
O1,VO2〜VOnもIC専用試験装置3の電圧データE1,E2〜En
により設定することができる。IC専用試験装置3のコン
パレータ回路C1,C2〜Cnの電源VDD,VSS電位は、IC専用試
験器の電圧電源回路21の出力電圧B5,B6により設定する
ことができる。またIC専用試験装置3の電源回路D1,D2
〜Dnの電源VDD,VSS電位も、IC専用試験装置3の電圧電
源回路21の出力電圧B5,B6により設定することができ
る。The voltage power supply circuit 21 of the IC-dedicated test apparatus 3 is a power supply circuit capable of setting a voltage substantially equal to the liquid crystal drive voltage.
The power supply circuit D 1, D 2 ~D n is a power circuit capable of setting 0 to 20V. Output voltage of voltage power supply circuit 21 of IC-dedicated test equipment 3
B 1 to B 6 can be set by the voltage data 1 of the IC dedicated test apparatus. Similarly the power supply circuit D 1, D 2 ~D n of the output voltage V
O 1, VO 2 ~VO voltage data E 1 of n also IC dedicated testing device 3, E 2 to E n
Can be set. The power supply V DD , V SS potentials of the comparator circuits C 1 , C 2 to C n of the IC dedicated test apparatus 3 can be set by the output voltages B 5 , B 6 of the voltage power supply circuit 21 of the IC dedicated test device. In addition, the power supply circuits D 1 , D 2
To D n of the power supply V DD, V SS potential can also be set by the output voltage B 5, B 6 of the IC dedicated test apparatus 3 of the voltage supply circuit 21.
被測定IC1の出力端子S1,S2〜Snの各電圧を本実施例の
IC専用試験装置で測定する方法を以下に示す。Each voltage of the output terminal S 1, S 2 ~S n of the measured IC 1 of this embodiment
The method for measuring with an IC dedicated test device is shown below.
IC専用試験装置3の電圧電源回路21の出力をB1=10
V、B2=20V,B3=30V,B4=40Vに設定し、被測定IC1にV1
=10V,V2=20V,V3=30V,V4=40Vを印加した場合、被測
定IC1の出力端子S1,S2〜Snには、10V〜40Vの電圧が発生
する。このとき、たとえば、被測定IC1の出力端子にS1
=40V,S2=10V,Sn=10Vが出力されていて、S1=40Vの測
定をするには、まず電圧電源回路21の出力電圧B5=50V,
B6=30Vに設定すると、コンパレータ回路C1,C2〜Cnの電
源は、VDD=50V,VSS30V,電源回路D1,D2〜Dnの電源は、V
DD=50V,VSS=30Vとなる。次に電源回路D1の電圧データ
を11Vと設定すると、電源回路D1のVSS電位が30Vなの
で、電源回路D1の出力電圧VO1には41Vが出力される。こ
のVO1=41Vの電圧をコンパレータ回路C1の比較電圧RefV
1に入力する。コンパレータ回路C1は、Ref1=40Vと被測
定IC1の出力端子S1=40Vとの大小を比較する。コンパレ
ータ回路C1の判定結果は比較電圧Ref1よりも小となる。
コンパレータ回路C1の判定結果が小となったので、今後
は、電源回路D1の電圧データを9Vに設定する。電源回路
D1の電圧VO1には39Vが出力される。前回と同様にVO1=3
9Vの電圧をコンパレータ回路C1の比較電圧Ref1に入力し
コンパレータ回路C1でRef1=39Vと被測定IC1の出力端子
S1=40Vとの大小を比較する。今度の場合は、コンパレ
ータ回路C1の判定結果は基準電圧Ref1よりも大となる。
以上のように電源回路D1の出力電圧VO1を変化させてS1
の電圧値を測定する。The output of the voltage power supply circuit 21 of the IC dedicated test apparatus 3 is B 1 = 10
V, B 2 = 20V, B 3 = 30V, set B 4 = 40V, V 1 to be measured IC 1
= 10V, V 2 = 20V, V 3 = 30V, the case of applying V 4 = 40V, the output terminal S 1, S 2 ~S n of the measured IC 1 ', the voltage of 10V~40V occurs. In this case, for example, S 1 to the output terminal of the measured IC 1
= 40V, S 2 = 10V, and S n = 10V are output, and to measure S 1 = 40V, first, the output voltage B 5 of the voltage power supply circuit 21 = 50V,
When B 6 is set to 30 V, the power supply of the comparator circuits C 1 , C 2 to C n is V DD = 50 V, V SS 30 V, and the power supply of the power supply circuits D 1 , D 2 to D n is V
DD = 50V and VSS = 30V. Next, when the voltage data of the power supply circuit D 1 is set to 11V, since V SS potential of the power supply circuit D 1 is 30 V, 41V is output to the output voltage VO 1 of the power supply circuit D 1. Comparison voltage of VO 1 = a voltage of 41V comparator circuit C 1 RefV
Enter 1 Comparator circuit C 1 compares the magnitude of the Ref 1 = 40V and the output terminal S 1 = 40V of the measured IC 1. The determination result of the comparator circuit C 1 becomes smaller than the comparison voltage Ref 1.
Since the determination result of the comparator circuit C 1 becomes small, the future, setting the voltage data of the power supply circuit D 1 to 9V. Power circuit
39V is output to the voltage VO 1 of D 1. VO 1 = 3 as before
Ref 1 = 39V and the output terminal of the measured IC 1 by the comparator circuit C 1 apply voltage of 9V in comparison voltage Ref 1 of the comparator circuit C 1
Compare the magnitude with S 1 = 40V. For now, the judgment result of the comparator circuit C 1 is larger than the reference voltage Ref 1.
By changing the output voltage VO 1 of the power supply circuit D 1 as described above, S 1
Measure the voltage value of
被測定IC1の出力端子S1=40Vの測定の例を示したが、
他の電圧30V,20V,10Vの場合も同様に、B5,B6の出力電圧
を変えることにより比較電圧を各出力の値に合わせられ
る。Although an example of a measurement of the output terminal S 1 = 40V of the measured IC 1,
Other voltage 30 V, 20V, similarly in the case of 10V, suit the comparison voltage to the value of each output by changing the output voltage of B 5, B 6.
第4図に被測定ICの出力電圧と電圧電源回路21の出力
電圧B1〜B6と電源回路D1,D2〜Dnの出力電圧の関係を示
す。Shows the relationship between the output voltage B 1 .about.B 6 and a power supply circuit D 1, D 2 ~D n of the output voltage of the output voltage and the voltage supply circuit 21 of the measured IC in Figure 4.
以上説明したように本発明の測定装置は、IC専用試験
装置のコンパレータ回路の電源(VDD及びVSS)電位及
びコンパレータ回路の比較電圧発生用電源回路の電源電
位をIC専用試験装置の電圧電源回路で変化することによ
り、コンパレータ回路及びコンパレータ比較電圧用電源
回路は従来の電圧範囲のままで容易に測定できるという
効果を有する。As described above, the measuring apparatus of the present invention uses the power supply potential (VDD and V SS ) of the comparator circuit of the IC dedicated test apparatus and the power supply potential of the comparison voltage generating power supply circuit of the comparator circuit as the voltage power supply circuit of the IC dedicated test apparatus. Has the effect that the comparator circuit and the power supply circuit for comparator comparison voltage can easily be measured in the conventional voltage range.
第1図は本発明の一実施例を示すブロック図、第2図は
従来例を示すブロック図、第3図は被測定ICの出力端子
S1,S2〜Snの出力電圧波形の一例を示す図、第4図は本
発明の実施例における被測定ICの出力電圧と電圧電源回
路21の出力電圧B1〜B6と電源回路D1,D2〜Dnの出力電圧
の関係を示す図である。 1……被測定IC、3……IC専用試験装置 V1,V2,V3,V4……被測定ICの入力端子 S1,S2〜Sn……被測定ICの出力端子 D1,D2〜Dn……IC専用試験装置の比較電圧電源回路 C1,C2〜Cn……IC専用試験装置のコンパレータ回路 21……IC専用試験装置の電圧電源回路FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a block diagram showing a conventional example, and FIG. 3 is an output terminal of an IC to be measured.
S 1, S 2 ~S n diagram showing an example of an output voltage waveform of Figure 4 is the output voltage B 1 .about.B 6 and a power supply circuit of the output voltage and the voltage supply circuit 21 of the measured IC in the embodiment of the present invention D 1, a diagram illustrating the relationship between the output voltage of the D 2 to D n. 1 ...... the measured IC, 3 ...... IC dedicated testing device V 1, V 2, V 3 , V 4 ...... input terminal S 1 of the measured IC, S 2 to S n ...... output terminal D of the measured IC 1 , D 2 to D n … Comparative voltage power supply circuit of IC dedicated test equipment C 1 , C 2 to C n … Comparator circuit of IC dedicated test equipment 21 …… Voltage power supply circuit of IC dedicated test equipment
Claims (1)
記コンパレータ回路の比較電圧発生用電源回路とを具備
する半導体集積回路の測定装置において、 前記コンパレータ回路の電源電位及び前記コンパレータ
回路の比較電圧発生用電源回路の電源電位を前記電圧電
源回路で可変するものであることを特徴とする半導体集
積回路の測定装置。1. An apparatus for measuring a semiconductor integrated circuit comprising a voltage power supply circuit, a comparator circuit, and a power supply circuit for generating a comparison voltage of the comparator circuit, wherein a power supply potential of the comparator circuit and a comparison voltage generation of the comparator circuit are generated. A power supply potential of a power supply circuit is varied by the voltage power supply circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02203641A JP3106486B2 (en) | 1990-07-31 | 1990-07-31 | Measurement equipment for semiconductor integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02203641A JP3106486B2 (en) | 1990-07-31 | 1990-07-31 | Measurement equipment for semiconductor integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0489584A JPH0489584A (en) | 1992-03-23 |
JP3106486B2 true JP3106486B2 (en) | 2000-11-06 |
Family
ID=16477411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP02203641A Expired - Fee Related JP3106486B2 (en) | 1990-07-31 | 1990-07-31 | Measurement equipment for semiconductor integrated circuits |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3106486B2 (en) |
-
1990
- 1990-07-31 JP JP02203641A patent/JP3106486B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0489584A (en) | 1992-03-23 |
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