JP3098680B2 - Method for measuring internal defects in semiconductor wafer and method for managing thermal oxidation furnace using the same - Google Patents
Method for measuring internal defects in semiconductor wafer and method for managing thermal oxidation furnace using the sameInfo
- Publication number
- JP3098680B2 JP3098680B2 JP06242168A JP24216894A JP3098680B2 JP 3098680 B2 JP3098680 B2 JP 3098680B2 JP 06242168 A JP06242168 A JP 06242168A JP 24216894 A JP24216894 A JP 24216894A JP 3098680 B2 JP3098680 B2 JP 3098680B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- lifetime
- wafer
- thermal oxidation
- oxidation furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体ウェーハのラ
イフタイム評価方法およびこのライフタイム測定を用い
た熱酸化炉の管理方法に関する。特に、紫外線照射によ
りキャリアの表面再結合を防止したライフタイム測定方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer lifetime evaluation method and a thermal oxidation furnace management method using the lifetime measurement. In particular, the present invention relates to a lifetime measurement method in which surface recombination of carriers is prevented by ultraviolet irradiation.
【０００２】[0002]
【従来の技術】半導体材料として大量に生産され、各種
デバイスに使用されるシリコンウェーハの品質管理にあ
っては、そのライフタイム測定が行われている。ライフ
タイムとは、シリコンウェーハに光、電気等のエネルギ
を加えることにより、発生した自由電子（少数キャリ
ア）が再結合するまでの時間を意味する。2. Description of the Related Art In quality control of silicon wafers which are produced in large quantities as semiconductor materials and used for various devices, their lifetimes are measured. The lifetime means the time until free electrons (minority carriers) generated by applying energy such as light and electricity to a silicon wafer are recombined.
【０００３】すなわち、シリコンウェーハの表面の一部
にＡｒレーザを照射すると、そのレーザ光のエネルギに
よって、シリコンの価電子帯から伝導帯に電子が励起さ
れ正孔−電子対が生成される。この電子は１０-6秒程度
の時間を経て価電子帯の正孔と再結合して消滅する。こ
の正孔−電子対のうちウェーハの導電型と逆の導電型の
少数キャリアの濃度がピーク濃度からその１／ｅに減少
するまでの時間が再結合ライフタイム（τR）である。
この場合、シリコンウェーハにて正常の格子形状を有し
ている部分よりも、歪や欠陥を有する格子の部分の方
が、バンドギャップが狭くなるという理由、ギャップ中
に準位を形成するという理由等により、少数キャリアの
再結合が容易である。この結果、欠陥、歪等を有する場
合は励起された少数キャリアの寿命が短く、したがって
そのライフタイムも短い。欠陥、歪等を有しないウェー
ハと結晶性歪を有するウェーハとの間でのこのライフタ
イムの差を求めると、歪や欠陥が多くなるほどτRが小
さくなる。よって、このデータにより欠陥、歪の有無を
判定することができる。That is, when a part of the surface of a silicon wafer is irradiated with an Ar laser, electrons are excited from the valence band of silicon to the conduction band by the energy of the laser light to generate a hole-electron pair. These electrons recombine with holes in the valence band after about 10 -6 seconds and disappear. The recombination lifetime (τ R ) is the time required for the concentration of minority carriers having the conductivity type opposite to the wafer conductivity type to decrease from the peak concentration to 1 / e thereof.
In this case, the reason that the band gap is narrower in the portion of the lattice having the strain or defect than the portion having the normal lattice shape in the silicon wafer, and that the level is formed in the gap For example, recombination of minority carriers is easy. As a result, when there are defects, strains, etc., the life of the excited minority carriers is short, and the life time thereof is also short. When the difference in the lifetime between the wafer having no defect and the strain and the wafer having the crystalline strain is obtained, τ R decreases as the number of strains and defects increases. Therefore, the presence / absence of a defect or distortion can be determined from this data.
【０００４】この少数キャリアのライフタイムはシリコ
ンウェーハの品質を評価するための重要な因子の一つで
ある。特に、非破壊、非接触、非汚染によるライフタイ
ム測定が求められている。[0004] The lifetime of the minority carrier is one of the important factors for evaluating the quality of a silicon wafer. In particular, nondestructive, non-contact, non-contaminated lifetime measurement is required.
【０００５】ところで、少数キャリアの再結合には、シ
リコンウェーハ表面での再結合と、ウェーハ内部での再
結合とがある。すなわち、シリコンウェーハの内部欠陥
の評価には少数キャリアの表面再結合の影響を排除する
ことが好ましい。この表面再結合を抑制する方法として
は、例えばウェーハ表面に熱酸化膜を付加して測定する
方法、正・負電荷膜処理をウェーハ表面に施して計測す
る方法、紫外線をウェーハ表面に照射する方法等が知ら
れている。The recombination of minority carriers includes recombination on the silicon wafer surface and recombination inside the wafer. That is, it is preferable to exclude the influence of the surface recombination of minority carriers in the evaluation of the internal defect of the silicon wafer. As a method of suppressing this surface recombination, for example, a method of adding a thermal oxide film to the wafer surface for measurement, a method of applying a positive / negative charge film treatment to the wafer surface for measurement, and a method of irradiating ultraviolet light to the wafer surface Etc. are known.
【０００６】[0006]
【発明が解決しようとする課題】熱酸化膜の方法は、破
壊測定につながり好ましくない。また、熱酸化膜形成時
にウェーハに汚染が生じたり、熱酸化膜形成に長時間を
要するという欠点がある。正・負電荷膜の方法は、危険
な薬液処理（重クロム酸ナトリウム）を伴うという欠点
があった。これらに対して、紫外線を照射してウェーハ
表面に電荷を発生させる方法では、発生させた電荷が短
時間、例えば数十秒で消失してしまい、ライフタイムを
正確、かつ、安定して測定することができなかった。特
に、ウェーハの全面についてのライフタイムのマップを
作製することはできなかった。The thermal oxide film method is not preferable because it leads to destructive measurement. Further, there are disadvantages that the wafer is contaminated when the thermal oxide film is formed, and that it takes a long time to form the thermal oxide film. The method of the positive / negative charge film has a drawback that it involves dangerous chemical treatment (sodium dichromate). On the other hand, in the method of generating charges on the wafer surface by irradiating ultraviolet rays, the generated charges disappear in a short time, for example, several tens of seconds, and the lifetime is accurately and stably measured. I couldn't do that. In particular, a lifetime map for the entire surface of the wafer could not be created.
【０００７】[0007]
【発明の目的】そこで、この発明は、非破壊、非接触、
非汚染で、かつ、ウェーハ全面についての安定した正確
なライフタイム測定が可能なライタタイム測定方法を提
供することを、その目的としている。また、この発明
は、熱酸化炉の汚染度等を判定可能な熱酸化炉の管理方
法を提供することを、その目的としている。Accordingly, the present invention provides a non-destructive, non-contact,
It is an object of the present invention to provide a writer time measurement method that is non-contaminated and capable of performing stable and accurate lifetime measurement on the entire surface of a wafer. Another object of the present invention is to provide a method for managing a thermal oxidation furnace that can determine the degree of contamination of the thermal oxidation furnace.
【０００８】[0008]
【課題を解決するための手段】請求項１に記載した発明
は、半導体ウェーハの表面にＡｌ化合物およびＦｅ化合
物を含有したシリコン酸化物の薄膜を形成し、この半導
体ウェーハ表面に紫外線を照射し、この後、この半導体
ウェーハのライフタイム測定を行う半導体ウェーハの内
部欠陥の測定方法である。According to the first aspect of the present invention, a thin film of silicon oxide containing an Al compound and an Fe compound is formed on a surface of a semiconductor wafer, and the surface of the semiconductor wafer is irradiated with ultraviolet rays. Thereafter, a method of measuring the internal defect of the semiconductor wafer by measuring the lifetime of the semiconductor wafer.
【０００９】[0009]
【００１０】請求項２に記載した発明は、半導体ウェー
ハの表面にＡｌ化合物およびＦｅ化合物を含むシリコン
酸化物の薄膜を形成し、この半導体ウェーハを所定温度
で熱処理し、この半導体ウェーハ表面に紫外線を照射
し、この後、この半導体ウェーハのライフタイム測定を
行う半導体ウェーハの内部欠陥の測定方法である。According to a second aspect of the present invention, a thin film of silicon oxide containing an Al compound and an Fe compound is formed on the surface of a semiconductor wafer, the semiconductor wafer is heat-treated at a predetermined temperature, and ultraviolet light is applied to the surface of the semiconductor wafer. This is a method of measuring internal defects in a semiconductor wafer by irradiating and thereafter measuring the lifetime of the semiconductor wafer.
【００１１】請求項３の発明は、上記熱処理の温度は、
５０℃〜２００℃である請求項２に記載の半導体ウェー
ハの内部欠陥の測定方法である。According to a third aspect of the present invention, the temperature of the heat treatment is:
The method for measuring internal defects in a semiconductor wafer according to claim 2, wherein the temperature is 50C to 200C.
【００１２】請求項４の発明は、上記ライフタイムの測
定は、半導体ウェーハ表面にレーザ光を照射した後マイ
クロ波を照射して行う請求項１〜請求項３のいずれか１
項に記載の半導体ウェーハの内部欠陥の測定方法であ
る。According to a fourth aspect of the present invention, the measurement of the lifetime is performed by irradiating the surface of the semiconductor wafer with a laser beam and then irradiating a microwave.
It is a measurement method of the internal defect of the semiconductor wafer described in the paragraph.
【００１３】[0013]
【００１４】請求項５に記載の発明は、半導体ウェーハ
の表面にＡｌ化合物およびＦｅ化合物を含むシリコン酸
化物の薄膜を形成し、この半導体ウェーハ表面に紫外線
を照射し、この後、そのライフタイムを測定し、この
後、この半導体ウェーハを熱酸化炉に装入してその表面
に熱酸化膜を形成し、次に、この半導体ウェーハのライ
フタイムを測定し、これらのライフタイムの測定値に基
づいて上記熱酸化炉の状態を判定する熱酸化炉の管理方
法である。According to a fifth aspect of the present invention, a thin film of a silicon oxide containing an Al compound and an Fe compound is formed on the surface of a semiconductor wafer, and the surface of the semiconductor wafer is irradiated with ultraviolet rays. Measurement, and thereafter, the semiconductor wafer is placed in a thermal oxidation furnace to form a thermal oxide film on the surface thereof. Then, the lifetime of the semiconductor wafer is measured, and based on the measured values of these lifetimes, This is a method for managing the thermal oxidation furnace for determining the state of the thermal oxidation furnace.
【００１５】[0015]
【００１６】[0016]
【００１７】[0017]
【作用】この発明に係る半導体ウェーハの内部欠陥の測
定方法にあっては、半導体ウェーハ表面にシリコン酸化
物を含む被膜を形成し、その後、紫外線を照射してその
表面に負電荷を付加している。このＳｉＯ2を主成分と
する被膜は負電荷の減少を阻止する。また、被膜中にＡ
ｌ（アルミニウム）化合物を存在させることにより、こ
の負電荷を長時間保持し続けることができる。また、被
膜中のＦｅ（鉄）化合物は負電荷の保持を助長するとい
う役割を果たす。さらに、５０℃〜２００℃での熱処理
を施すと、上記被膜上の吸着水が脱離し、電荷保持力が
高められる。なお、被膜形成前に半導体ウェーハ表面は
例えばＳＣ１液で洗浄しておく。ＳＣ１（Ｓｔａｎｄａ
ｒｄ Ｃｌｅａｎｉｎｇ １）液は、例えばＮＨ4Ｏ
Ｈ：Ｈ2Ｏ2：Ｈ2Ｏ＝１：１：５（容量比）の組成のも
のを使用する。In the method for measuring internal defects in a semiconductor wafer according to the present invention, a film containing silicon oxide is formed on the surface of the semiconductor wafer, and then the surface is irradiated with ultraviolet rays to add a negative charge to the surface. I have. The coating containing SiO 2 as a main component prevents a decrease in negative charge. In addition, A
By the presence of the l (aluminum) compound, the negative charge can be maintained for a long time. Further, the Fe (iron) compound in the coating plays a role of promoting retention of negative charges. Further, when a heat treatment at 50 ° C. to 200 ° C. is performed, the adsorbed water on the film is desorbed, and the charge retention power is increased. Before the film formation, the surface of the semiconductor wafer is washed with, for example, SC1 solution. SC1 (Standard
rd Cleaning 1) The liquid is, for example, NH 4 O
A composition of H: H 2 O 2 : H 2 O = 1: 1: 5 (volume ratio) is used.
【００１８】ここで、ライフタイムの測定は以下の方法
にて行う。すなわち、ウェーハ表面にレーザ光を照射し
てキャリアを励起し、このキャリアがピーク濃度の状態
からその１／ｅの濃度になるまでの時間を測定する。例
えば１０ＧＨｚのマイクロ波を照射する反射マイクロ波
法、ウェーハと細い電線との間の容量の変化を利用する
容量プローブ法、アルミニウムと同軸線路の間の容量の
変化を利用する同軸ケーブル法、半導体ウェーハをスト
リップ線路の上に置くストリップ線路法、フェライトコ
アで作った渦電流を利用する相加渦電流法等がある。こ
こで、励起光は被測定ウェーハを構成する半導体のバン
ドギャップ以上の波長、例えばシリコンウェーハの場合
はエネルギが１．１ｅＶ以上のレーザ光を使用する。Here, the measurement of the lifetime is performed by the following method. That is, the carrier is excited by irradiating the wafer surface with laser light, and the time from the peak concentration of the carrier to the concentration of 1 / e thereof is measured. For example, a reflected microwave method of irradiating a microwave of 10 GHz, a capacitance probe method using a change in capacitance between a wafer and a thin electric wire, a coaxial cable method using a change in capacitance between aluminum and a coaxial line, a semiconductor wafer There is a strip line method in which an eddy current is placed on a strip line, an additive eddy current method using an eddy current made of a ferrite core, and the like. Here, as the excitation light, a laser light having a wavelength equal to or more than the band gap of the semiconductor constituting the wafer to be measured, for example, a silicon wafer having an energy of 1.1 eV or more is used.
【００１９】また、この発明に係る熱酸化炉の管理方法
にあっては、半導体ウェーハの表面にＡｌ化合物および
Ｆｅ化合物を含むシリコン酸化物の薄膜を形成した後に
紫外線を照射してライフタイム測定を行い、その後、熱
酸化炉にて熱酸化膜を形成してライフタイム測定を行
う。この２回の測定値の差に基づいてその熱酸化炉の汚
染度等を判定することができる。このライフタイム測定
値の差が大きい程、汚染度が大きいと考えられるからで
ある。したがって、汚染のない熱酸化炉を使用すること
により、ライフタイム測定にても熱酸化膜を表面に形成
する方法を高信頼性のもとに利用することができる。な
お、半導体ウェーハとしてはシリコンウェーハの他、化
合物半導体ウェーハをも含む。In the method for managing a thermal oxidation furnace according to the present invention, a lifetime is measured by forming a thin film of a silicon oxide containing an Al compound and a Fe compound on the surface of a semiconductor wafer and then irradiating ultraviolet light. After that, a thermal oxide film is formed in a thermal oxidation furnace to measure the lifetime. The degree of contamination of the thermal oxidation furnace can be determined based on the difference between the two measured values. This is because the greater the difference between the measured lifetimes, the greater the degree of contamination. Therefore, by using a thermal oxidation furnace free from contamination, the method of forming a thermal oxide film on the surface can be utilized with high reliability even in lifetime measurement. The semiconductor wafer includes a compound semiconductor wafer in addition to a silicon wafer.
【００２０】[0020]
【実施例】以下、この発明に係る測定方法の実施例を詳
細に説明する。最初に、Ｐ型、面方位（１００）、比抵
抗１０Ω・ｃｍのシリコンウェーハを、処理液中に１０
分間浸漬する。この処理液は、液組成がＮＨ4ＯＨ：Ｈ2
Ｏ2：Ｈ2Ｏ＝１：３：６（容量比）で、液の温度が室温
の溶液に、Ａｌ（ＮＯ3）3をＡｌ換算量で１０ｐｐｍ、
Ｆｅ（ＮＯ3）2をＦｅ換算量で１０ｐｐｍ含有させたも
のである。浸漬の結果、このシリコンウェーハ表面には
厚さ数オングストロームのＡｌ化合物とＦｅ化合物とを
含むシリコン酸化物の薄膜が形成される。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the measuring method according to the present invention will be described in detail. First, a silicon wafer of P type, plane orientation (100), and specific resistance of 10Ω · cm
Soak for a minute. This treatment liquid has a liquid composition of NH 4 OH: H 2
Al (NO 3 ) 3 was added to a solution at O 2 : H 2 O = 1: 3: 6 (volume ratio) and the temperature of the solution was room temperature at 10 ppm in terms of Al,
Fe (NO 3 ) 2 is contained at 10 ppm in terms of Fe. As a result of the immersion, a thin film of silicon oxide containing an Al compound and an Fe compound having a thickness of several angstroms is formed on the surface of the silicon wafer.
【００２１】そして、この処理液中からシリコンウェー
ハをとりだした後、１０分間超純水で水洗を行い、スピ
ンドライ乾燥を行った。さらに、このシリコンウェーハ
をオーブンに装入し、１００℃の空気雰囲気中で１０分
間加熱処理を行った。Then, after taking out the silicon wafer from the processing solution, the silicon wafer was washed with ultrapure water for 10 minutes and spin-dried. Further, the silicon wafer was placed in an oven and subjected to a heat treatment in an air atmosphere at 100 ° C. for 10 minutes.
【００２２】そして、シリコンウェーハの温度を室温に
まで下げた後、紫外線照射用のステージにこのウェーハ
を移載した。このステージでは２００Ｗの紫外線を５ｃ
ｍの距離からウェーハの表面および裏面に１０秒間照射
した。Then, after lowering the temperature of the silicon wafer to room temperature, the wafer was transferred to a stage for ultraviolet irradiation. At this stage, 200 W
The front and back surfaces of the wafer were irradiated for 10 seconds from a distance of m.
【００２３】その後、ウェーハをライフタイム測定用の
ステージに移載し、紫外線照射後１０秒経過時、３０秒
経過時、６０秒経過時、１２０秒経過時、１８０秒経過
時で、それぞれ９０４ｎｍのレーザを照射し、ウェーハ
内部にキャリアを励起、発生させ、さらに、９．６ＧＨ
ｚのマイクロ波を照射して、反射するマイクロ波の強度
を測定する。このようにしてライフタイムτR測定を行
った。Thereafter, the wafer is transferred to a stage for measuring the lifetime, and after 10 seconds, 30 seconds, 60 seconds, 120 seconds, and 180 seconds after the irradiation of the ultraviolet rays, the wafer has a wavelength of 904 nm. Irradiate a laser to excite and generate carriers inside the wafer.
The microwave of z is irradiated, and the intensity of the reflected microwave is measured. Thus, the lifetime τ R measurement was performed.
【００２４】そして、従来との比較のため、液組成がＮ
Ｈ4ＯＨ：Ｈ2Ｏ2：Ｈ2Ｏ＝１：１：５（容量比）、温度
が８０℃の溶液中にシリコンウェーハを１０分間浸漬し
てその表面にシリコン酸化物の被膜を形成した。このウ
ェーハを上記実施例と同様の条件で水洗、乾燥後、紫外
線照射し、ライフタイム測定を行った。これらの結果を
表１に示す。For comparison with the prior art, the liquid composition is N
A silicon wafer was immersed in a solution of H 4 OH: H 2 O 2 : H 2 O = 1: 1: 5 (volume ratio) at a temperature of 80 ° C. for 10 minutes to form a silicon oxide film on its surface. . This wafer was washed with water and dried under the same conditions as in the above example, and then irradiated with ultraviolet rays to measure the lifetime. Table 1 shows the results.
【００２５】[0025]
【表１】 [Table 1]
【００２６】次に、熱酸化炉の管理方法についての実施
例を説明する。まず、Ｐ型、面方位（１００）、比抵抗
１０Ω・ｃｍのシリコンウェーハを処理液中に１０分間
浸漬する。この処理液は、液組成がＮＨ4ＯＨ：Ｈ
2Ｏ2：Ｈ2Ｏ＝１：３：６（容量比）、液の温度が８０
℃の溶液に、Ａｌ（ＮＯ3）3をＡｌ換算量で１０ｐｐｍ
含有させたものである。そして、この処理液からシリコ
ンウェーハを取り出した後、１０分間超純水で水洗を行
い、スピンドライ乾燥を行った。さらに、このシリコン
ウェーハをオーブン（酸化炉）に装入し、１００℃の空
気雰囲気中で１０分間加熱処理を行った。そして、この
シリコンウェーハの温度を室温にまで下げた後、紫外線
照射用のステージにこのシリコンウェーハを移載した。
このステージでは２００Ｗの紫外線を５ｃｍの距離から
ウェーハの表面および裏面に１０秒間照射した。その
後、ウェーハをライフタイム測定用のステージに移載
し、ライフタイム測定を行った。Next, an embodiment of a method for managing a thermal oxidation furnace will be described. First, a silicon wafer having a P type, a plane orientation (100), and a specific resistance of 10 Ω · cm is immersed in a processing liquid for 10 minutes. This processing liquid has a liquid composition of NH 4 OH: H
2 O 2 : H 2 O = 1: 3: 6 (volume ratio), liquid temperature 80
Al (NO 3 ) 3 was added to the solution at 10 ° C. in an amount of 10 ppm in terms of Al.
It was included. Then, after taking out the silicon wafer from the treatment liquid, the silicon wafer was washed with ultrapure water for 10 minutes and spin-dried. Further, the silicon wafer was placed in an oven (oxidizing furnace) and subjected to a heat treatment in an air atmosphere at 100 ° C. for 10 minutes. Then, after lowering the temperature of the silicon wafer to room temperature, the silicon wafer was transferred to a stage for ultraviolet irradiation.
In this stage, the front and back surfaces of the wafer were irradiated with ultraviolet rays of 200 W from a distance of 5 cm for 10 seconds. Thereafter, the wafer was transferred to a stage for measuring the lifetime, and the lifetime was measured.
【００２７】さらに、上記と同一のシリコンウェーハを
熱酸化した後、ライフタイム測定を行った。両者の比較
を図１に示す。３回目の管理時において、この実施例に
係るライフタイム測定値と熱酸化法によるライフタイム
測定値との間に大きな差が生じており、この熱酸化炉に
おいて汚染が生じていることがわかる。なお、４回目は
熱酸化炉を洗浄した後の測定値を示している。Further, after the same silicon wafer as above was thermally oxidized, the lifetime was measured. FIG. 1 shows a comparison between the two. At the time of the third management, there is a large difference between the measured lifetime value according to this example and the measured lifetime value by the thermal oxidation method, and it can be seen that contamination has occurred in this thermal oxidation furnace. The fourth measurement shows the measured values after cleaning the thermal oxidation furnace.
【００２８】[0028]
【発明の効果】この発明に係る内部欠陥測定方法によれ
ば、キャリアの表面再結合を長時間にわたって抑制する
ことができ、ウェーハ全面の正確なライフタイム測定値
のマップを得ることができる。内部欠陥の評価を安定し
て行うことができる。また、この発明に係る熱酸化炉の
管理方法によれば、その汚染度等を正確に管理すること
ができる。According to the method for measuring internal defects according to the present invention, surface recombination of carriers can be suppressed for a long time, and a map of accurate measured lifetime values of the entire wafer can be obtained. Internal defects can be evaluated stably. Further, according to the method for managing a thermal oxidation furnace according to the present invention, the degree of contamination and the like can be accurately managed.
【図１】この発明に係る熱酸化炉の管理方法についての
実施例を示すグラフである。FIG. 1 is a graph showing an embodiment of a method for managing a thermal oxidation furnace according to the present invention.
フロントページの続き (72)発明者 龍田 次郎 埼玉県大宮市北袋町一丁目297番地 三 菱マテリアル株式会社 中央研究所内 (72)発明者 新行内 隆之 埼玉県大宮市北袋町一丁目297番地 三 菱マテリアル株式会社 中央研究所内 (56)参考文献 特開 平４−225150（ＪＰ，Ａ) 特開 平２−98134（ＪＰ，Ａ) 特開 平６−112145（ＪＰ，Ａ) 特開 平６−177222（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/66 G01N 21/00 H01L 21/31 Continuing on the front page (72) Inventor Jiro Tatsuta 1-297 Kitabukurocho, Omiya-shi, Saitama Prefecture Mitsui Materials Co., Ltd. (56) References JP-A-4-225150 (JP, A) JP-A-2-98134 (JP, A) JP-A-6-112145 (JP, A) JP-A-6-177222 ( JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/66 G01N 21/00 H01L 21/31
Claims (5)
びＦｅ化合物を含有したシリコン酸化物の薄膜を形成
し、 この半導体ウェーハ表面に紫外線を照射し、 この後、この半導体ウェーハのライフタイム測定を行う
ことを特徴とする半導体ウェーハの内部欠陥の測定方
法。1. A method for forming a thin film of silicon oxide containing an Al compound and an Fe compound on a surface of a semiconductor wafer, irradiating the surface of the semiconductor wafer with ultraviolet rays, and thereafter measuring a lifetime of the semiconductor wafer. A method for measuring internal defects in a semiconductor wafer, comprising:
びＦｅ化合物を含むシリコン酸化物の薄膜を形成し、 この半導体ウェーハを所定温度で熱処理し、 この半導体ウェーハ表面に紫外線を照射し、 この後、この半導体ウェーハのライフタイム測定を行う
ことを特徴とする半導体ウェーハの内部欠陥の測定方
法。2. A thin film of a silicon oxide containing an Al compound and an Fe compound is formed on the surface of a semiconductor wafer, the semiconductor wafer is heat-treated at a predetermined temperature, and the surface of the semiconductor wafer is irradiated with ultraviolet rays. A method for measuring internal defects in a semiconductor wafer, comprising measuring a lifetime of the semiconductor wafer.
である請求項２に記載の半導体ウェーハの内部欠陥の測
定方法。3. The temperature of the heat treatment is 50 ° C. to 200 ° C.
3. The method for measuring internal defects in a semiconductor wafer according to claim 2, wherein:
ーハ表面にレーザ光を照射した後マイクロ波を照射して
行う請求項１〜請求項３のいずれか１項に記載の半導体
ウェーハの内部欠陥の測定方法。4. The semiconductor wafer according to claim 1, wherein the measurement of the lifetime is performed by irradiating the surface of the semiconductor wafer with a laser beam and then irradiating a microwave. Measuring method.
びＦｅ化合物を含むシリコン酸化物の薄膜を形成し、 この半導体ウェーハ表面に紫外線を照射し、 この後、そのライフタイムを測定し、 この後、この半導体ウェーハを熱酸化炉に装入してその
表面に熱酸化膜を形成し、 次に、この半導体ウェーハのライフタイムを測定し、 これらのライフタイムの測定値に基づいて上記熱酸化炉
の状態を判定する熱酸化炉の管理方法。5. A thin film of silicon oxide containing an Al compound and an Fe compound is formed on the surface of a semiconductor wafer, the surface of the semiconductor wafer is irradiated with ultraviolet rays, and the lifetime is measured. The semiconductor wafer is charged into a thermal oxidation furnace and a thermal oxide film is formed on the surface thereof. Then, the lifetime of the semiconductor wafer is measured, and the state of the thermal oxidation furnace is measured based on the measured lifetime. The method of managing the thermal oxidation furnace.
Priority Applications (1)
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|---|---|---|---|
| JP06242168A JP3098680B2 (en) | 1994-09-09 | 1994-09-09 | Method for measuring internal defects in semiconductor wafer and method for managing thermal oxidation furnace using the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06242168A JP3098680B2 (en) | 1994-09-09 | 1994-09-09 | Method for measuring internal defects in semiconductor wafer and method for managing thermal oxidation furnace using the same |
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| Publication Number | Publication Date |
|---|---|
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| JP3098680B2 true JP3098680B2 (en) | 2000-10-16 |
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| KR101246493B1 (en) * | 2011-07-08 | 2013-04-01 | 주식회사 엘지실트론 | Method for evaluating defect in Wafer |
| JP5706776B2 (en) * | 2011-07-21 | 2015-04-22 | 株式会社半導体エネルギー研究所 | Semiconductor substrate evaluation method |
| KR101339624B1 (en) * | 2012-09-07 | 2013-12-09 | 주식회사 엘지실트론 | Silicon single crystal wafer and semiconductor device |
| CN112904173A (en) * | 2021-01-28 | 2021-06-04 | 西安奕斯伟硅片技术有限公司 | Method and equipment for testing minority carrier lifetime of silicon wafer |
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| JPS5198953A (en) * | 1975-02-26 | 1976-08-31 | mos daioodono raifutaimu sokuteiho | |
| JPH0298134A (en) * | 1988-10-04 | 1990-04-10 | Mitsubishi Metal Corp | Pretreatment process for semiconductor wafer life time measurement |
| JPH04225150A (en) * | 1990-12-27 | 1992-08-14 | Semitetsukusu:Kk | Method and apparatus for evaluating lifetime of semiconductor material |
| JP2698298B2 (en) * | 1992-09-28 | 1998-01-19 | 松下電子工業株式会社 | Trichloroethane cleaning method for core tube of heat treatment furnace |
| JPH06177222A (en) * | 1992-12-03 | 1994-06-24 | Sony Corp | Evaluating method for contamination quantity from susceptor |
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