JP3097780B2 - Multi-layer spectral reflector - Google Patents
Multi-layer spectral reflectorInfo
- Publication number
- JP3097780B2 JP3097780B2 JP04050797A JP5079792A JP3097780B2 JP 3097780 B2 JP3097780 B2 JP 3097780B2 JP 04050797 A JP04050797 A JP 04050797A JP 5079792 A JP5079792 A JP 5079792A JP 3097780 B2 JP3097780 B2 JP 3097780B2
- Authority
- JP
- Japan
- Prior art keywords
- element layer
- multilayer film
- light element
- reflectance
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体材料など各種の
材料の化学状態、化学組成、不純物濃度、中でも軽元素
を高感度で分析する装置に必要な軟Ｘ線を選択する分光
素子や、微細加工、Ｘ線顕微鏡、Ｘ線望遠鏡などに必要
なＸ線反射鏡に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spectroscopic element for selecting a soft X-ray required for an apparatus for analyzing a chemical state, a chemical composition, and an impurity concentration of various materials such as a semiconductor material with high sensitivity among light elements, The present invention relates to an X-ray reflector required for fine processing, an X-ray microscope, an X-ray telescope, and the like.
【０００２】[0002]
【従来の技術】等間隔に原子面が並んだり、重元素層と
軽元素層がそれぞれ一定の厚みで交互に並んでいるよう
な物質や材料にＸ線が入射すると各原子や各層でＸ線が
散乱する。ある特定の角度方向ではこれら散乱したＸ線
が干渉し強めあう結果、その角度方向に強いＸ線が出射
する現象、いわゆるブラッグ回折が観察される。2. Description of the Related Art When an X-ray is incident on a substance or a material in which atomic planes are arranged at equal intervals or where a heavy element layer and a light element layer are alternately arranged with a constant thickness, X-rays are generated at each atom and each layer. Are scattered. As a result of these scattered X-rays interfering and enhancing each other in a specific angular direction, a phenomenon in which strong X-rays are emitted in that angular direction, so-called Bragg diffraction, is observed.
【０００３】現在、単色、準単色の軟Ｘ線やＸ線を選択
するために、このようなブラッグ回折効果を有する分光
素子が用いられているが、中でも重元素層と軽元素層が
交互に一定の厚みで形成された多層膜が使用されるよう
になってきた。多層膜はシリコンや石英などの基板の上
に、一般には軽元素層と重元素層をそれぞれ一定の厚み
で規則正しく積層させて形成されており、このような多
層膜は特に軟Ｘ線波長領域で回折格子や結晶に比べてＸ
線の反射率が高いという利点を有している。例えば波長
が約１３ｎｍ程度では重元素層にＭｏやＲｕを使用し、
軽元素層にＳｉを使用した、Ｍｏ／Ｓｉ，Ｒｕ／Ｓｉ
は、５０〜６０％という高い反射率が得られることから
上記分光素子への適用が検討されつつあった。At present, in order to select monochromatic or quasi-monochromatic soft X-rays or X-rays, a spectral element having such a Bragg diffraction effect is used. Among them, a heavy element layer and a light element layer are alternately formed. Multilayer films formed with a certain thickness have been used. The multilayer film is generally formed by regularly laminating a light element layer and a heavy element layer with a constant thickness on a substrate such as silicon or quartz, and such a multilayer film is particularly formed in a soft X-ray wavelength region. X compared to diffraction gratings and crystals
It has the advantage of high line reflectivity. For example, when the wavelength is about 13 nm, use Mo or Ru for the heavy element layer,
Mo / Si, Ru / Si using Si for light element layer
Since a high reflectance of 50 to 60% was obtained, application to the above-mentioned spectral element was being studied.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、例えば
Ｍｏ／Ｓｉ多層膜やＲｕ／Ｓｉ多層膜においては、Ｍｏ
の融点が約２６００℃、Ｒｕの融点が約２３００℃ある
のに対し、Ｓｉの融点が１４１０℃と低いために、数１
００℃のレベルでＭｏ／Ｓｉ多層膜やＲｕ／Ｓｉ多層膜
の構造が乱れ始める。例えばＭｏ／Ｓｉ多層膜をＡｒ雰
囲気中で１時間熱処理した場合のＸ線反射率は、２００
℃１時間の熱処理ではほとんど変化しないが、４００℃
程度の温度を越えると多層膜の積層構造が原子の拡散な
どによって乱れ、この影響でＸ線反射率は急激に低下す
る。この事実を反映して、高強度のＸ線や軟Ｘ線がこの
多層膜に照射されると照射部の温度が上昇するため、こ
の部分の積層構造が乱れ、この影響で反射率が低下す
る。反射率が低下すると、分析応用の場合には変化した
だけ精度や確度が悪くなり、また、Ｘ線リソグラフィー
などに適用された場合は、レジストを適正時間露光する
ことが困難になる。更には、多層膜そのものの寿命が短
いなどの様々の問題を有していた。However, for example, in a Mo / Si multilayer film or a Ru / Si multilayer film, Mo
Has a melting point of about 2600 ° C. and Ru has a melting point of about 2300 ° C., whereas the melting point of Si is as low as 1410 ° C.
At the level of 00 ° C., the structure of the Mo / Si multilayer film or Ru / Si multilayer film starts to be disordered. For example, when the Mo / Si multilayer film is heat-treated for 1 hour in an Ar atmosphere, the X-ray reflectance is 200
1 hour heat treatment hardly changes, but 400 ° C
When the temperature exceeds about a certain level, the laminated structure of the multilayer film is disturbed by diffusion of atoms and the like, and the X-ray reflectivity sharply decreases due to this effect. Reflecting this fact, when high-intensity X-rays or soft X-rays are irradiated on this multilayer film, the temperature of the irradiated portion rises, so that the laminated structure of this portion is disturbed and the reflectivity decreases due to this effect. . When the reflectivity decreases, the accuracy and accuracy deteriorate as much as it changes in the case of analytical application, and when applied to X-ray lithography or the like, it becomes difficult to expose the resist for an appropriate time. Further, there are various problems such as a short lifetime of the multilayer film itself.
【０００５】本発明は、上述の問題を解決するために提
案されたもので、その目的は、軽元素層にＳｉを用いた
多層膜よりも耐熱性の向上された多層膜分光反射鏡を提
供することにある。The present invention has been proposed to solve the above-mentioned problem, and an object of the present invention is to provide a multilayer spectroscopic reflector having improved heat resistance compared to a multilayer film using Si as a light element layer. Is to do.
【０００６】[0006]
【課題を解決するための手段】本発明者らは、上記目的
を達成するために鋭意検討した結果、軽元素層にＳｉ化
合物を使用することにより上記の問題が解消されること
を見出した。すなわち本発明は、ブラッグ回折効果を有
する多層膜分光素子であって、重元素層としてＭｏを選
択し、軽元素層にＨｆ、Ｍｏ、Ｔｉ及びＴａからなる群
から選択される高融点金属のシリサイドのうち、窒化珪
素を用いたものよりも６００℃、１時間加熱後の１．５
４ÅのＸ線の反射率変化率が優れる高融点金属含有量の
ものを使用したことを特徴とする多層膜分光反射鏡を要
旨とするものである。Means for Solving the Problems The inventors of the present invention have made intensive studies to achieve the above object, and as a result, have found that the use of a Si compound in the light element layer solves the above problem. That is, the present invention relates to a multilayer spectroscopic element having a Bragg diffraction effect, wherein Mo is selected as a heavy element layer.
And a group consisting of Hf, Mo, Ti and Ta in the light element layer.
Among the refractory metal silicides selected from
1.5 hours after heating at 600 ° C for 1 hour
4 ° X-ray reflectivity change rate
The present invention provides a multilayer spectral reflection mirror characterized by using the above.
【０００７】[0007]
【作用】Ｓｉの融点は１４１０℃程度であるが、Ｓｉの
化合物とすることで融点が高くなるものがある。例え
ば、ＳｉＯ2は１５５０℃、溶融（fused）ＳｉＯ2は約
１７００℃、ＴｉＳｉ2は１５４０℃、Ｔｉ5Ｓｉ3は２
１２０℃、ＭｏＳｉ2は１９８０℃、Ｂ6Ｓｉは１９５０
℃、Ｓｉ3Ｎ4は１９００℃、ＶＳｉ2は１７５０℃、Ｖ3
Ｓｉは約１７３０℃、Ｖ5Ｓｉ3は２１５０℃、ＨｆＳｉ
は２６００℃の融点を有する。The melting point of Si is about 1410 ° C., but the use of a compound of Si may increase the melting point. For example, SiO 2 is 1550 ° C., fused SiO 2 is about 1700 ° C., TiSi 2 is 1540 ° C., Ti 5 Si 3 is 2
120 ° C., 1980 ° C. for MoSi 2 , 1950 for B 6 Si
° C, 1900 ° C for Si 3 N 4 , 1750 ° C for VSi 2 , V 3
Si is about 1730 ° C, V 5 Si 3 is 2150 ° C, HfSi
Has a melting point of 2600 ° C.
【０００８】従って、重元素層にＳｉよりも融点の高い
材料を用い、かつ、軽元素層にＳｉを用いた従来の多層
膜に対して、軽元素層にＳｉ化合物を用いた多層膜で
は、多層膜の耐熱性が向上されることになる。即ち、従
来の多層膜と本発明の多層膜とを比較した場合、本発明
の多層膜では経時変化が少なくなくなる。このような本
発明の多層膜を、（１）Ｘ線・軟Ｘ線を利用した各種分
析に適用させた場合、多層膜の耐熱性が軽元素層にＳｉ
を用いた多層膜よりも向上するため、反射率の変化が少
なくなり、精度や確度が向上する。（２）Ｘ線リソグラ
フィーに適用させた場合、従来の多層膜よりも（１）と
同様の理由で反射率の変化が少なくなり、適正露光時間
を正確に決められるようになる。（３）更に多層膜自身
の寿命が延びるなどの効果を有することとなる。Therefore, in contrast to a conventional multilayer film using a material having a higher melting point than Si for the heavy element layer and using Si for the light element layer, a multilayer film using a Si compound for the light element layer has The heat resistance of the multilayer film is improved. That is, when the conventional multilayer film is compared with the multilayer film of the present invention, the multilayer film of the present invention has less change with time. When such a multilayer film of the present invention is applied to (1) various analyzes using X-rays and soft X-rays, the heat resistance of the multilayer film is lower than that of the light element layer by Si.
Therefore, the change in reflectance is reduced, and the accuracy and accuracy are improved. (2) When applied to X-ray lithography, the change in reflectance is smaller than that of the conventional multilayer film for the same reason as in (1), and the appropriate exposure time can be determined accurately. (3) Further, there is an effect that the life of the multilayer film itself is extended.
【０００９】[0009]
【実施例】次に本発明の代表的な実施例について説明す
る。Next, typical embodiments of the present invention will be described.
【００１０】参考例 スパッタリング法により重元素層としてＭｏを用い、軽
元素層にＳｉＯ2、溶融ＳｉＯ2、Ｂ6Ｓｉ及びＳｉ3Ｎ4
を用いた多層膜を作製した。また対照として軽元素層に
Ｓｉを使用した多層膜を作製した。それぞれの周期長は
約７０Å、重元素層と軽元素層の層厚の比率は１：２、
重元素層と軽元素層のペアの数を３０とした。これらの
多層膜をＡｒ雰囲気中、種々の温度で１時間熱処理し
た。そのときのＸ線（１．５４Å）反射率の変化を測定
した。図１に反射率の変化と熱処理温度との関係を示
す。同図において、反射率の変化が少ない程耐熱性に優
れていることを示すものである。高温での熱処理でもＭ
ｏ／Ｓｉ化合物多層膜はＭｏ／Ｓｉ多層膜に比べ反射率
の低下は少なく、耐熱性に優れていることが確認され
た。 Reference Example Mo was used as a heavy element layer by sputtering, and SiO 2 , fused SiO 2 , B 6 Si and Si 3 N 4 were used for a light element layer.
Was used to produce a multilayer film. As a control, a multilayer film using Si as a light element layer was prepared. Each period length is about 70 °, the ratio of the layer thickness of the heavy element layer to the light element layer is 1: 2,
The number of pairs of the heavy element layer and the light element layer was set to 30. These multilayer films were heat-treated for 1 hour at various temperatures in an Ar atmosphere. The change in the X-ray (1.54 °) reflectance at that time was measured. FIG. 1 shows the relationship between the change in reflectance and the heat treatment temperature. In the figure, it is shown that the smaller the change in reflectance, the better the heat resistance. M even in heat treatment at high temperature
It was confirmed that the o / Si compound multilayer film had less decrease in reflectance than the Mo / Si multilayer film and was excellent in heat resistance.
【００１１】実施例１ 参考例 と同様に、重元素層としてＭｏを用い、軽元素層
にＨｆxＳｉ100-xを使用して多層膜を作製した。それぞ
れの周期長は約７０Å、重元素層と軽元素層の層厚の比
率は１：２、重元素層と軽元素層のペアの数は３０と
し、ｘの値を０から１００までの間で変化させた。これ
らの多層膜をＡｒ雰囲気中、６００℃で１時間熱処理し
た。そのときのＸ線（１．５４Å）反射率の変化を測定
した。図２に熱処理後の反射率／熱処理前の反射率と組
成との関係を示す。反射率の熱処理前後の比が１に近い
程耐熱性に優れていることを示す。Ｈｆ濃度の増加とと
もに反射率の低下が少なくなり、図２に示したように、
Ｓｉ 3 Ｎ 4 を用いた場合（約０．５）より耐熱性に優れる
濃度範囲が存在することが確認された。[0011] Similar to Example 1 Reference Example, using Mo as the heavy element layer to prepare a multilayer film using Hf x Si 100-x to the light element layer. Each period length is about 70 °, the ratio of the thickness of the heavy element layer to the light element layer is 1: 2, the number of pairs of the heavy element layer and the light element layer is 30, and the value of x is from 0 to 100. Was changed. These multilayer films were heat-treated at 600 ° C. for 1 hour in an Ar atmosphere. The change in the X-ray (1.54 °) reflectance at that time was measured. FIG. 2 shows the relationship between the composition after heat treatment / reflectance before heat treatment and composition. The closer the ratio of the reflectance before and after the heat treatment to 1, the more excellent the heat resistance. As the Hf concentration increases, the decrease in the reflectance decreases, and as shown in FIG.
Superior heat resistance when using Si 3 N 4 (about 0.5)
It was confirmed that there was a concentration range .
【００１２】実施例２ 参考例 と同様に、重元素層としてＭｏを用い、軽元素層
にＭｏxＳｉ100-xを使用して多層膜を作製した。それぞ
れの周期長は約７０Å、重元素層と軽元素層の層厚の比
率は２：３、重元素層と軽元素層のペアの数は３０と
し、ｘの値を０から９０までの間で変化させた。これら
の多層膜をＡｒ雰囲気中、６００℃で１時間熱処理し
た。そのときのＸ線（１．５４Å）反射率の変化を測定
した。図３に熱処理後の反射率／熱処理前の反射率と組
成との関係を示す。反射率の熱処理前後の比が１に近い
程耐熱性に優れていることを示す。Ｍｏ濃度の増加とと
もに反射率の低下が少なくなり、図３に示したように、
Ｓｉ 3 Ｎ 4 を用いた場合（約０．５）より耐熱性に優れる
濃度範囲が存在することが確認された。Example 2 In the same manner as in the reference example , a multilayer film was formed by using Mo for the heavy element layer and Mo x Si 100-x for the light element layer. Each period length is about 70 °, the ratio of the thickness of the heavy element layer to the light element layer is 2: 3, the number of pairs of the heavy element layer and the light element layer is 30, and the value of x is from 0 to 90. Was changed. These multilayer films were heat-treated at 600 ° C. for 1 hour in an Ar atmosphere. The change in the X-ray (1.54 °) reflectance at that time was measured. FIG. 3 shows the relationship between the composition after heat treatment / reflectance before heat treatment and composition. The closer the ratio of the reflectance before and after the heat treatment to 1, the more excellent the heat resistance. As the Mo concentration increases, the decrease in the reflectance decreases, and as shown in FIG.
Superior heat resistance when using Si 3 N 4 (about 0.5)
It was confirmed that there was a concentration range .
【００１３】実施例３ 参考例 と同様に、重元素層としてＭｏを用い、軽元素層
にＴｉxＳｉ100-xを使用して多層膜を作製した。それぞ
れの周期長は約７０Å、重元素層と軽元素層の層厚の比
率は２：３、重元素層と軽元素層のペアの数は３０と
し、ｘの値を０から８０までの間で変化させた。これら
の多層膜をＡｒ雰囲気中、６００℃で１時間熱処理し
た。そのときのＸ線（１．５４Å）反射率の変化を測定
した。図４に熱処理後の反射率／熱処理前の反射率と組
成との関係を示す。反射率の熱処理前後の比が１に近い
程耐熱性に優れていることを示す。Ｔｉ濃度の増加とと
もに反射率の低下が少なくなり、図４に示したように、
Ｓｉ 3 Ｎ 4 を用いた場合（約０．５）より耐熱性に優れる
濃度範囲が存在することが確認された。Example 3 In the same manner as in the reference example , a multilayer film was formed by using Mo for the heavy element layer and using Ti x Si 100-x for the light element layer. Each period length is about 70 °, the ratio of the thickness of the heavy element layer to the light element layer is 2: 3, the number of pairs of the heavy element layer and the light element layer is 30, and the value of x is from 0 to 80. Was changed. These multilayer films were heat-treated at 600 ° C. for 1 hour in an Ar atmosphere. The change in the X-ray (1.54 °) reflectance at that time was measured. FIG. 4 shows the relationship between the composition after heat treatment / reflectance before heat treatment and composition. The closer the ratio of the reflectance before and after the heat treatment to 1, the more excellent the heat resistance. As the Ti concentration increases, the decrease in the reflectance decreases, and as shown in FIG.
Superior heat resistance when using Si 3 N 4 (about 0.5)
It was confirmed that there was a concentration range .
【００１４】実施例４ 参考例 と同様に、重元素層としてＭｏを用い、軽元素層
にＴａxＳｉ100-xを使用して多層膜を作製した。それぞ
れの周期長は約７０Å、重元素層と軽元素層の層厚の比
率は２：３、重元素層と軽元素層のペアの数は３０と
し、ｘの値を０から１００までの間で変化させた。これ
らの多層膜をＡｒ雰囲気中、６００℃で１時間熱処理し
た。そのときのＸ線（１．５４Å）反射率の変化を測定
した。図５に熱処理後の反射率／熱処理前の反射率と組
成との関係を示す。反射率の熱処理前後の比が１に近い
程耐熱性に優れていることを示す。Ｔａ濃度の増加とと
もに反射率の低下が少なくなり、図５に示したように、
Ｓｉ 3 Ｎ 4 を用いた場合（約０．５）より耐熱性に優れる
濃度範囲が存在することが確認された。Example 4 In the same manner as in the reference example , a multilayer film was formed by using Mo for the heavy element layer and using Ta x Si 100-x for the light element layer. Each period length is about 70 °, the ratio of the thickness of the heavy element layer to the light element layer is 2: 3, the number of pairs of the heavy element layer and the light element layer is 30, and the value of x is from 0 to 100. Was changed. These multilayer films were heat-treated at 600 ° C. for 1 hour in an Ar atmosphere. The change in the X-ray (1.54 °) reflectance at that time was measured. FIG. 5 shows the relationship between the composition after heat treatment / reflectance before heat treatment and composition. The closer the ratio of the reflectance before and after the heat treatment to 1, the more excellent the heat resistance. As the Ta concentration increases, the decrease in the reflectance decreases, and as shown in FIG.
Superior heat resistance when using Si 3 N 4 (about 0.5)
It was confirmed that there was a concentration range .
【００１５】[0015]
【発明の効果】以上述べたように、本発明の多層膜は、
軽元素層にＳｉを使用した多層膜に比較して耐熱性が向
上している。このため、このような多層膜を（１）Ｘ線
・軟Ｘ線を利用した各種分析に適用させた場合、多層膜
の耐熱性が軽元素層にＳｉを用いた多層膜よりも向上す
るため、耐熱性の向上から反射率の変化が少なくなり、
精度や確度が向上する。（２）Ｘ線リソグラフィーに適
用させた場合、軽元素層にＳｉを用いた多層膜よりも
（１）と同様の理由で反射率の変化が少なくなり、適正
露光時間を正確に決められるようになる。（３）更に多
層膜自身の寿命が延びるなどの効果を有することとな
る。上記の実施例では２元化合物の場合について述べた
が、これらに他の元素を加えて融点が更に向上する場合
は３元以上の化合物を軽元素層に適用しても効果がある
こと、また、重元素層に実施例以外の元素や化合物でＳ
ｉより融点の高い材料を使用した場合にも効果があるこ
とは言うまでもない。As described above, the multilayer film of the present invention has
Heat resistance is improved as compared with a multilayer film using Si as the light element layer. Therefore, when such a multilayer film is applied to (1) various analyses using X-rays and soft X-rays, the heat resistance of the multilayer film is improved as compared with the multilayer film using Si as the light element layer. , The change in reflectance is reduced due to the improved heat resistance,
Accuracy and accuracy are improved. (2) When applied to X-ray lithography, the change in reflectance is smaller than that of the multilayer film using Si as the light element layer for the same reason as in (1), so that the appropriate exposure time can be determined accurately. Become. (3) Further, there is an effect that the life of the multilayer film itself is extended. In the above embodiment, the case of a binary compound was described. However, when the melting point is further improved by adding another element to these, it is effective to apply a ternary or more compound to the light element layer. , An element or compound other than the examples in the heavy element layer
Needless to say, the effect is also obtained when a material having a melting point higher than i is used.
【図１】従来の多層膜と参考例に示した多層膜のＸ線反
射率の熱処理温度との関係を示した図である。FIG. 1 is a diagram showing the relationship between the X-ray reflectivity of a conventional multilayer film and the heat treatment temperature of the multilayer film shown in Reference Example .
【図２】軽元素層にＨｆ−Ｓｉ化合物を用いた場合の熱
処理前後の反射率の変化とＨｆ濃度との関係を示した図
である。FIG. 2 is a diagram showing a relationship between a change in reflectance before and after heat treatment and an Hf concentration when an Hf—Si compound is used for a light element layer.
【図３】軽元素層にＭｏ−Ｓｉ化合物を用いた場合の熱
処理前後の反射率の変化とＭｏ濃度との関係を示した図
である。FIG. 3 is a diagram showing a relationship between a change in reflectance before and after a heat treatment and a Mo concentration when a Mo—Si compound is used for a light element layer.
【図４】軽元素層にＴｉ−Ｓｉ化合物を用いた場合の熱
処理前後の反射率の変化とＴｉ濃度との関係を示した図
である。FIG. 4 is a diagram showing a relationship between a change in reflectance before and after heat treatment and a Ti concentration when a Ti—Si compound is used for a light element layer.
【図５】軽元素層にＴａ−Ｓｉ化合物を用いた場合の熱
処理前後の反射率の変化とＴａ濃度との関係を示した図
である。FIG. 5 is a diagram showing a relationship between a change in reflectance before and after heat treatment and a Ta concentration when a Ta-Si compound is used for a light element layer.
フロントページの続き (56)参考文献 特開 平３−240000（ＪＰ，Ａ) 特開 昭63−161403（ＪＰ，Ａ) 特開 昭63−88502（ＪＰ，Ａ) 特開 平１−321399（ＪＰ，Ａ) 特開 平１−309000（ＪＰ，Ａ) 特開 昭63−266397（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G21K 1/06 Continuation of the front page (56) References JP-A-3-240000 (JP, A) JP-A-63-161403 (JP, A) JP-A-63-88502 (JP, A) JP-A-1-321399 (JP, A) , A) JP-A-1-3099000 (JP, A) JP-A-63-266697 (JP, A) (58) Fields studied (Int. Cl. 7 , DB name) G21K 1/06
Claims (1)
子であって、重元素層としてＭｏを選択し、軽元素層に
Ｈｆ、Ｍｏ、Ｔｉ及びＴａからなる群から選択される高
融点金属のシリサイドのうち、窒化珪素を用いたものよ
りも６００℃、１時間加熱後の１．５４ÅのＸ線の反射
率変化率が優れる高融点金属含有量のものを使用したこ
とを特徴とする多層膜分光反射鏡。1. A multilayer spectroscopic element having a Bragg diffraction effect, wherein Mo is selected as a heavy element layer, and Mo is selected as a light element layer.
High selected from the group consisting of Hf, Mo, Ti and Ta
Among the silicides of the melting point metal, those using silicon nitride
1.54 ° X-ray reflection after heating at 600 ° C for 1 hour
A multilayer spectroscopic reflector comprising a high melting point metal having an excellent rate of change .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04050797A JP3097780B2 (en) | 1992-03-09 | 1992-03-09 | Multi-layer spectral reflector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04050797A JP3097780B2 (en) | 1992-03-09 | 1992-03-09 | Multi-layer spectral reflector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05249297A JPH05249297A (en) | 1993-09-28 |
| JP3097780B2 true JP3097780B2 (en) | 2000-10-10 |
Family
ID=12868787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04050797A Expired - Lifetime JP3097780B2 (en) | 1992-03-09 | 1992-03-09 | Multi-layer spectral reflector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3097780B2 (en) |
-
1992
- 1992-03-09 JP JP04050797A patent/JP3097780B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05249297A (en) | 1993-09-28 |
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