JP3088576B2 - Scanning tunnel microscope with integrated actuator and information processing device with integrated actuator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a micro-displacement element for generating a two-dimensional displacement by utilizing a thickness-shear deformation of a piezoelectric body, an integrated actuator having a plurality of such micro-displacement elements, and the integrated actuator. The present invention relates to a scanning tunnel microscope provided with an integrated actuator and an information processing apparatus provided with the integrated actuator.

[0002]

2. Description of the Related Art A scanning tunneling microscope (hereinafter referred to as "ST").
M ”), a sharp conductive tip is placed on the surface of the sample by several n.
m, which utilizes a tunnel effect in which a current flows through a barrier between them when they are brought close to each other, and is well known [G. Binning et al, Helve
tica Physica Acta, 55,726
(1982)]. The tunnel current flowing between the probe and the sample surface changes exponentially with respect to the distance between the probe and the sample surface. Therefore, while keeping the tunnel current constant, By performing a matrix scan along the (XY directions), the surface state of the sample can be observed at a high resolution on the order of atoms.

Further, a high-density information processing apparatus has been proposed by applying the principle of the STM. In this method, recording is performed by changing the voltage applied between the probe and the recording medium using a probe similar to the STM (Japanese Patent Laid-Open No.
JP-A-3-161552, JP-A-63-161553, etc.).

Conventionally, a probe used in a STM or a recording / reproducing apparatus to which the principle of the STM is applied is provided with the above XY in order to be able to finely control a relative positional relationship with a sample or a recording medium. It can be slightly displaced in the direction. As a technique for forming such a probe, a processing technique for forming a fine structure on one substrate using a semiconductor manufacturing process is known. In this method, a central portion supported by two pairs of parallel springs that can be displaced in the X direction and the Y direction, respectively, is formed from a substrate of single crystal silicon by fine processing of etching, and a probe is formed in the central portion. A cantilever portion is provided. Accordingly, the probe can be slightly displaced in the XY directions with respect to the sample or the recording medium.

[0005]

However, in the above conventional example, since a parallel spring is used as a mechanism for minutely displacing the probe in the X and Y directions, the probe is easily affected by external vibrations. There is a problem that it is difficult to accurately position the probe and the probe. Also, since the probe is supported via a parallel spring, its mechanical strength is low,
There were also difficulties in vibration resistance and durability.

Accordingly, an object of the present invention is to provide a minute displacement element which is resistant to external vibrations, is excellent in durability, and can generate accurate minute displacement, and further comprises a plurality of such minute displacement elements. It is an object of the present invention to provide a plurality of integrated actuators, a scanning tunneling microscope provided with the integrated actuators, and an information processing apparatus provided with the integrated actuators.

[0007]

In order to achieve the above object, a scanning tunneling microscope according to the present invention is arranged such that the polarization direction is changed to the surface of the substrate.
Are arranged on the same circumference on the substrate as a direction perpendicular to
A plurality of piezoelectric bodies having a columnar structure;
An electrode provided on each of the opposite side surfaces;
Cantilever supported on the end faces of the number of piezoelectric bodies opposite to the substrate
Micro-displacement element with probe formed at free end of beam
A plurality of integrated actuators provided on the substrate
And the probe of the integrated actuator facing the probe.
The placed sample is two-dimensionally parallel to the surface of the sample.
Sample driving means for scanning, each probe and the sample
Voltage to generate a tunnel current between
And voltage applying means .

Further, the information processing apparatus of the present invention has a polarization direction
On the same circumference on the substrate as the direction perpendicular to the surface of the substrate
A plurality of columnar-structured piezoelectric bodies, each of said piezoelectric bodies
Electrodes provided on each side face of
And supporting the plurality of piezoelectric bodies on end faces opposite to the substrate.
With a probe formed at the free end of the bent cantilever
An integrated electrode provided with a plurality of small displacement elements on the substrate.
A actuator and the probe of the integrated actuator
Recording medium with electric memory effect arranged opposite to
Is scanned two-dimensionally in parallel to the surface of the recording medium.
Recording medium driving means, and each of the probes and the recording medium
Apply current to generate tunnel current during
Voltage applying means.

[0009]

[0010]

[0011]

[0012]

[Action] In the present invention constructed as described above, the piezoelectric body disposed on the substrate, perpendicular der Runode for each direction of polarization plane of the substrate, provided on a side face of the piezoelectric bodies By applying a voltage between the electrodes, an electric field is applied to each piezoelectric body in a direction perpendicular to the polarization direction. Thus each of the piezoelectric elements causes a thickness shear deformation, the end face of the substrate opposite to the side parallel to small displacement and the surface of the substrate. Since each of these piezoelectric bodies are arranged on the same circumference, torsional deformation occurs as the synthesis of thickness shear deformation of the piezoelectric bodies. Further, since each piezoelectric body has a columnar structure, it has a relatively high aspect ratio.

[0013] Further, the substrate is opposite to the plurality of piezoelectric substrates.
Of the cantilever is supported on the end face on the side.
Since the probe is formed at the end, the probe can make a circular motion in a plane parallel to the surface of the substrate due to the torsional deformation described above . Therefore , it is suitably used as a driving mechanism of a probe used in a scanning tunnel microscope or an information processing apparatus to which this principle is applied.

[0014]

Next, embodiments of the present invention will be described with reference to the drawings.

First, the minute displacement element will be described. FIG. 1 is a schematic perspective view of a first embodiment of a small displacement element used in the present invention. As shown in FIG. 1, the micro displacement element 7 of the present embodiment includes eight micro displacement bodies 6 arranged on the same circumference on the surface of a substrate 1 made of single crystal silicon. Zinc oxide (ZnO) whose polarization direction 4 is oriented perpendicular to the surface of the substrate 1
And the electrodes 3a and 3b formed on the opposing surfaces of the piezoelectric members 2 respectively.

The operation of the minute displacement body 6 described above will be described with reference to FIG. FIG. 2 is a side view of one of the small displacement bodies shown in FIG.
In a state where no voltage is applied to each of the electrodes 3a and 3b,
As shown in FIG. 2A, the piezoelectric body 2 has its polarization direction 4
Are oriented perpendicular to the substrate. At this time, when a voltage is applied to each of the electrodes 3a, 3b, an electric field is applied to the piezoelectric body 2 in a direction perpendicular to the polarization direction 4, and the piezoelectric body 2
Since the resulting thickness shear deformation defined by d _15, FIG. 2
(B), the upper surface of the piezoelectric body 2 is slightly displaced in the direction indicated by the white arrow. When the polarity of the voltage applied to each of the electrodes 3a and 3b is reversed, the direction of displacement of the piezoelectric body 2 is also reversed.

Since the piezoelectric bodies 2 are operated as described above, a plurality of piezoelectric bodies 2 are arranged on the same circumference as shown in FIG. As a synthesis, it is possible to cause the micro-displacement element 7 to be twisted in the circumferential direction (the direction indicated by a white arrow).

Here, an example of a manufacturing process of the minute displacement element 7 of this embodiment will be described with reference to FIG. FIG. 3 is a cross-sectional view of the minute displacement element for explaining a manufacturing process of the example of the minute displacement element shown in FIG.

First, as shown in FIG. 3A, an insulating layer 8 made of Si ₃ N ₄ is formed on a surface of a substrate 1 made of single crystal silicon to a thickness of 2000 Å by a low pressure CVD method. Further, a zinc oxide layer 2 'is formed thereon by a sputter deposition method. The zinc oxide layer 2 ′ has a hexagonal crystal structure, and the c-axis, which is the piezoelectric polarization axis, is relatively easily oriented in the direction perpendicular to the substrate 1, and the polarization direction 4 is perpendicular to the substrate 1. Direction.

After the zinc oxide layer 2 'is formed on the substrate 1, a photoresist is applied on the zinc oxide layer 2' and patterned by photolithography into the arrangement of the piezoelectric body 2 shown in FIG. The zinc oxide layer 2 'is etched with an acetic acid-based etchant to form a plurality of piezoelectric bodies 2 made of zinc oxide as shown in FIG.
Each of the piezoelectric bodies 2 has a columnar structure, and can be a structure having a relatively high aspect ratio.

After the plurality of piezoelectric members 2 are formed, as shown in FIG. 3C, a metal thin film 3 is formed on the entire surface of the substrate 1 on which the respective piezoelectric members 2 are formed by MOCVD.

Next, as shown in FIG. 3D, a photoresist 9 is applied so as to cover the metal thin film 3. Thereafter, as shown in FIG. 3E, the photoresist 9 is removed by patterning except for the portions corresponding to the electrodes 3a and 3b shown in FIG.

After the photoresist 9 is removed, the metal thin film 3 exposed by the removal of the photoresist 9 is removed by etching, and the photoresist 9 remaining without being removed is further removed, thereby obtaining the structure shown in FIG. The electrodes 3a and 3b are formed on the opposing surfaces of the piezoelectric bodies 2 as shown in FIG. Thus, the small displacement element 7 shown in FIG. 1 is manufactured.

According to the above-described manufacturing process, in this embodiment, the height of each piezoelectric body 2 is 10 μm, the interval between the electrodes 3a and 3b of the adjacent piezoelectric bodies 2 is 3 μm, and the inner radius of the minute displacement element 7 is 5 μm. The displacement element 7 was manufactured. Also,
The voltage applied to the electrodes 3a and 3b is 5 V, and the displacement angle θ of the piezoelectric body 2 at this time (see FIG. 2B) is about 1.1 × 1.
It was 0 ^-3 deg.

As described above, since each piezoelectric body 6 is a columnar structure, it has a high strength, is hardly affected by external vibrations, and has excellent durability. In addition, since the minute displacement element of this embodiment performs minute displacement by utilizing the thickness-shear deformation of each piezoelectric body 6, it is possible to generate extremely minute and accurate minute displacement.

In this embodiment, an example in which the piezoelectric body 2 is made of zinc oxide is used. However, this is another material as long as the polarization axis is perpendicular to the surface of the substrate 1. Materials may be used. For example, a similar minute displacement element can be manufactured using AlN or PZT. Also, the number of the minute displacement bodies 6 is not limited to eight, and it is preferable that the number of the minute displacement bodies 6 is large in order to perform a smooth operation in the circumferential direction.

Next, a description will be given of a second embodiment of the minute displacement element according to the present invention. FIG. 4 is a schematic plan view of a second embodiment of the minute displacement element used in the present invention , and FIG. 5 is a cross-sectional view taken along line AA 'of the minute displacement element shown in FIG. FIG.
In FIG. 5 and FIG. 5, for the sake of simplicity, a plurality of minute displacement bodies are shown and described as one minute displacement body 16, and the same applies to FIGS. 6 and 7 described later.

As shown in FIGS. 4 and 5, a minute displacement body 16 is provided on the surface of the substrate 11. Since the minute displacement body 16 is similar to that of the first embodiment, a detailed description thereof is omitted here. Small displacement body 1
One end of a cantilever 20 serving as a cantilever is fixed to the upper end surface of 6. At the other end of the cantilever 20, a probe 2 having a sharp tip extending in a direction opposite to the substrate 11 is provided.
2 are provided, and an extraction electrode 24 is connected to the probe 22. An electrode 23 is provided in the vicinity of the other end of the cantilever 20, and a counter electrode 2 is provided on a portion of the substrate 11 facing the electrode 23 with the cantilever 20 interposed therebetween.
4 are provided.

When a voltage is applied between the electrode 23 and the counter electrode 24 based on the above-described configuration, each of these electrodes 23,
An attractive force or a repulsive force by electrostatic force acts between 24. As a result, the other end of the cantilever 20 is displaced in a direction perpendicular to the surface of the substrate 11 (hereinafter, referred to as “Z direction”) in accordance with a voltage applied between the electrodes 23 and 24, and accordingly, the probe 2
2 also displaces in the Z direction. Further, the cantilever 20 is twisted and deformed in the circumferential direction in the same manner as in the first embodiment, so that the cantilever 20 can move in a plane perpendicular to the Z direction (hereinafter referred to as an “XY plane”). The probe 22 swings about the center O of 16 to cause the probe 22 to generate a small arc motion in the XY plane. Therefore, the tip of the probe 22 can be three-dimensionally and precisely scanned by combining the minute displacement of the probe 22 in the Z direction and the arc movement in the XY plane. From the above, the probe 22 is brought close to the conductive sample surface to a vicinity of several nm to generate a tunnel current, and the feedback control is performed so that the distance between the tip of the probe 22 and the sample surface is kept constant. By detecting the tunnel current, the state of the sample surface can be observed with high resolution, and can be used as a probe of a scanning tunnel microscope.

Hereinafter, an example of a manufacturing process of the minute displacement element of this embodiment will be described with reference to FIG. FIG. 6 shows FIG.
FIG. 6 is a cross-sectional view of the minute displacement element for explaining a manufacturing process of the example of the minute displacement element shown in FIG. 5.

First, as shown in FIG. 6A, when forming the minute displacement body 16, the counter electrode 24 is also formed on the substrate 11.

Next, as shown in FIG.
1, a sacrifice layer 25 is formed as a film. At this time, the thickness of the sacrificial layer 25 is the same as the thickness (height) of the minute displacement body 16.

After the sacrifice layer 25 is formed, as shown in FIG. 6C, the portion of the sacrifice layer 25 formed on the minute displacement body 16 is removed by etching by photolithography.

Thereafter, as shown in FIG. 6D, an amorphous silicon nitride film 20 'is formed on the sacrificial layer 25. Further, a metal thin film is formed on the amorphous silicon nitride film 20 ', and is patterned by photolithography to form an extraction electrode 21 and an electrode 23 (see FIGS. 4 and 5).

After forming the extraction electrode 21 and the electrode 23, the amorphous silicon nitride film 20 'is patterned into the shape of the cantilever 20 shown in FIGS. 4 and 5, and the cantilever 20 is formed as shown in FIG. Form. Then, a photoresist is applied on the cantilever 20 to a thickness of 5 μm or more, and a portion of the photoresist formed on a portion where a probe is to be formed on the cantilever 20 is removed. Further, evaporation is performed in a diagonal direction on the portion where the photoresist is removed, and the photoresist 22 is lifted off to form the probe 22.

After the probe 22 is formed, the sacrificial layer 25 is removed by etching to obtain the state shown in FIG. 6F, and the minute displacement element shown in FIGS. 4 and 5 is manufactured.

According to the manufacturing process described above, in this embodiment, the thickness of the minute displacement body 16 is 10 μm, the outer radius of the minute displacement body 16 is 10 μm, and the length of the cantilever 20 is 100 μm.
m probe units were produced. Also, the probe 2 at this time
The displacement amount in the XY plane direction of No. 2 was 3 × 10 ⁻³ μm, and the displacement amount in the Z direction was 1 μm.

Further, as shown in FIG.
The integrated actuator 101 can be manufactured by arranging a large number of the small displacement bodies 16 having the cantilever 20 and the probe 22 similar to those shown in FIGS.

Such an integrated actuator 101
Can be easily formed by expanding the photolithography pattern in the manufacturing process shown in FIGS. 3 and 6, and a large number of minute displacement elements can be formed in a series of processes with high dimensional accuracy. can do.
In this embodiment, 90 minute displacement elements are integrated on a 40 mm square substrate. In addition, by using single crystal silicon for the substrate 11, semiconductor elements such as transistors and diodes can be integrated over the same substrate.

Next, a scanning tunnel microscope equipped with an integrated actuator will be described.

FIG. 8 is a schematic side view of a main part of a scanning tunnel microscope provided with the integrated actuator shown in FIG. As shown in FIG. 8, on a stage 105 on which the sample 102 is placed, a fixing member 104 to which three tilt adjusting screws 106 (one not shown) is screwed is attached to each of the tilt adjusting screws 1.
06 are supported by three points. Fixing member 10
4 is provided on a portion facing the sample 102 via a Z-axis coarse piezoelectric element 103. The integrated actuator 1 shown in FIG.
01 is fixed. The Z-axis coarse movement piezoelectric element 103 is for roughly moving the integrated actuator 101 in the Z-axis direction. The Z-axis coarse movement piezoelectric element 103 allows each probe 22 of the integrated actuator 101 (see FIG. 7). 2) allows the integrated actuator 101 to approach the sample 102 to a distance where the tunnel current can be detected. Further, by adjusting the amount of screwing of each tilt adjusting screw 106 into the fixing member 104, the integrated actuator 1
01 and the surface of the sample 102 are adjusted in parallelism. Further, each probe 22 of the integrated actuator 101 and the sample 1
02, a voltage applying means (not shown) for applying a voltage for generating a tunnel current between each probe 22 and the sample 102, and a tunnel current flowing from each probe 22 to the sample 102. A tunnel current detector (not shown) for detection is connected.

On the other hand, as shown in FIG. 9, the stage 105 has a structure in which two pairs of parallel springs 105a and 105b formed integrally with the stage 105 are combined so as to be orthogonal to each other in the XY plane. X is the central part to be placed
It can be freely displaced in the Y direction. The displacement of the central portion in the X and Y directions is performed by the multilayer piezoelectric element 107 arranged to expand and contract in the Y direction and the multilayer piezoelectric element 108 arranged to expand and contract in the X direction. As is clear from this, each laminated piezoelectric element 107, 10
At 8, the sample driving means for two-dimensionally scanning the sample 102 in parallel with its surface is constituted.

In the configuration described above, while applying a voltage between each probe 22 and the sample 102 by the voltage applying means, each of the multilayer piezoelectric elements 107 and 108 is driven to move the sample 102 in the XY plane. Dimensional scanning, and the tunnel current at this time is detected by a tunnel current detector, so that the sample 1
02 can be observed, but the integrated actuator 10
Since each of the first and second probes 22 is configured to be independently displaceable in the Z direction, each of the first and second probes 22 can maintain a certain distance with respect to minute irregularities on the surface of the sample 102. Scanning in the X and Y directions can be performed while maintaining. Further, each probe 22 can be displaced independently in the XY plane, and the relative position of each probe 22 in the XY plane can be corrected. Simultaneous scanning of the probe can be performed accurately. This makes it possible to observe the surface state of the sample 102 at high speed.

Next, an information processing apparatus having an integrated actuator will be described.

FIG. 10 is a schematic configuration diagram of an information processing apparatus provided with the integrated actuator shown in FIG. FIG.
As shown in FIG. 7, the XY stage 201 on which the recording medium 310 is placed is composed of an X-direction linear actuator 205 for moving the XY stage 201 in the X direction, and an XY stage 2.
01 in the Y direction. X direction linear actuator 205
The Y-direction linear actuator 206 is driven by a drive signal from a stage drive circuit 306 based on a command from the computer 320, and moves the XY stage 201 in the X-direction and the Y-direction.
That is, the stage drive circuit 306, the X-direction linear actuator 205, and the Y-direction linear actuator 206 constitute a recording medium driving unit for two-dimensionally scanning the recording medium 310 in parallel with its surface. The recording medium 310 includes: a recording medium substrate 307; a metal electrode layer 308 obtained by epitaxially growing Au or the like on the recording medium substrate 307; A recording layer 309 in which eight layers of azulene are accumulated by the LB method (accumulation method).

On the other hand, a portion facing the recording medium 310 is provided with the integrated actuator 1 fixed to the support 203.
01 is arranged. This integrated actuator 10
1 is the same as that shown in FIG. Support 2
03 is provided with a Z-direction linear actuator 204 for moving the support body 203 in the Z-direction.
Is driven by a drive signal from a drive circuit 305 based on a servo signal from a servo circuit 303 connected to the drive circuit 305. In addition, between each probe 22 of the integrated actuator 101 and the recording medium 310, each probe 22
9, a tunnel current detector 301 for detecting a tunnel current flowing to the metal electrode layer 308 through the metal electrode layer 308;
A recording / reproducing bias circuit 207 as voltage applying means for applying a voltage for writing or reading information is connected between the recording medium 310 and the recording medium 310. Each probe 22 receives a signal from a drive circuit 304 based on a servo signal from a servo circuit 302 that servos the relative position between each probe 22 and the recording medium 310 based on the tunnel current detected by the tunnel current detector 301. The driving signals are independently driven in the Z direction and the XY plane.

The recording on the recording medium 310 based on the above configuration is performed by moving the XY stage 201 within the XY plane while the integrated actuator 101 is brought close to the recording medium 310 by the Z-direction linear actuator 204 to a predetermined distance. While performing two-dimensional scanning, the integrated actuator 101
When each of the probes 22 comes to the writing position on the recording area of the recording medium 310, the recording / reproducing bias circuit 207 applies a pulse-like voltage. This pulse-like voltage is a voltage sufficient for the recording layer 309 having the electric memory effect to change from the OFF (high resistance) state to the ON (low resistance) state. The writing timing and the like are determined by the computer 320.
Depending on the control signal from

For reproduction, a bias circuit 20 for recording and reproduction is provided between each probe 22 and the metal electrode layer 308 of the recording medium 310.
7, the XY stage 201 is two-dimensionally scanned while applying a reading voltage, and the tunnel current detector 301 observes a change in current on the recording area of the recording medium 310. This current change is transmitted to the computer 320 as read information. The read timing and the like depend on a control signal from the computer 320.

In the information processing apparatus described above, each probe 22 of the integrated actuator 101 is configured to be independently displaceable in the Z direction. Also, it is possible to scan in the XY directions while keeping each probe 22 at a fixed distance. Further, each probe 22 can be displaced independently in the XY plane, and the relative position of each probe 22 in the XY plane can be corrected. Simultaneous scanning of the probe can be performed accurately. This makes it possible to write data to the recording medium 310 and read information from the recording medium 310 at high speed. Further, since a large number of probes 22 are formed in the integrated actuator 101 at a high density, a large amount of information can be recorded and reproduced at a high density.

[0050]

Since the present invention is configured as described above, the following effects can be obtained.

As described above, according to the present invention, the micro displacement element has a polarization direction perpendicular to the surface of the substrate.
Multiple piezoelectric bodies with electrodes on the side are arranged on the same circumference.
Therefore, extremely minute and accurate torsional deformation can be generated as a composite of the thickness shear deformation of each piezoelectric body. In addition, since each of the piezoelectric bodies is a columnar structure, it has a relatively high aspect ratio, is less affected by external vibration, and has excellent durability.

Then, the end of the piezoelectric body opposite to the substrate
By providing the probe with a cantilever on the surface, it is possible to generate the above-described torsional deformation, thereby causing the probe to generate an arc motion.

[0053] Accordingly, it is possible to perform the fine drive of the probe difficult accurately be affected by vibrations from the outside, the top
Integrated actuator having a plurality of the small displacement elements described above
In it is used in actual processing apparatus which applies the scanning tunneling microscope or the principle of the surface observation and recording medium of the sample
Recording and reproduction of information can be performed favorably.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a first embodiment of a small displacement element used in the present invention.

FIGS. 2A and 2B are side views of one of the minute displacement bodies shown in FIG. 1, in which FIG. 2A shows a state before displacement, and FIG. 2B shows a state after displacement. Is shown.

FIG. 3 is a cross-sectional view of the minute displacement element for describing an example of a manufacturing process of the minute displacement element shown in FIG.

FIG. 4 is a schematic plan view of a second embodiment of the small displacement element used in the present invention.

FIG. 5 is a sectional view taken along line AA ′ of the minute displacement element shown in FIG. 4;

FIG. 6 is a cross-sectional view of the minute displacement element for explaining a manufacturing process of the example of the minute displacement element shown in FIGS. 4 and 5;

FIG. 7 is a perspective view of a main part of an integrated actuator in which a large number of the probe units shown in FIGS. 4 and 5 are arranged on the same substrate.

8 is a schematic side view of a main part of a scanning tunnel microscope provided with the integrated actuator shown in FIG. 7;

FIG. 9 is a schematic plan view of the stage shown in FIG.

10 is a schematic configuration diagram of an information processing apparatus including the integrated actuator shown in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 11 Substrate 2 Piezoelectric body 2 'Zinc oxide layer 3 Metal thin film 3a, 3b, 23 Electrode 4 Polarization direction 6 Micro displacement body 7, 17 Micro displacement element 8 Insulating layer 9 Photoresist 20 Cantilever 20' Amorphous silicon nitride film 21 Leader Electrode 22 Probe 24 Counter electrode 25 Sacrificial layer 101 Integrated actuator 102 Sample 103 Z-coordinate coarse piezoelectric element 104 Fixing member 105 Stage 105 a, 105 b Parallel spring 106 Tilt adjusting screw 107, 108 Stacked piezoelectric element 201 XY stage 203 Support 204 Z-direction linear actuator 205 X-direction linear actuator 206 Y-direction linear actuator 207 Recording / playback bias circuit 301 Tunnel current detector 302, 303 Servo circuit 304, 305 Drive circuit 306 Stage drive Circuit 307 Recording medium substrate 308 Metal electrode layer 309 Recording layer 310 Recording medium 320 Computer

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-46943 (JP, A) JP-A-2-1399071 (JP, A) JP-A-3-52572 (JP, A) JP-A-4- 184201 (JP, A) JP-A-4-258826 (JP, A) JP-A-4-128603 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G01B 7/00-7 / 34 H01J 37/28

Claims (2)

(57) [Claims] 1. A plurality of columnar-structured piezoelectric members arranged on the same circumference on the substrate with the direction of polarization perpendicular to the surface of the substrate, and provided on each of the opposing side surfaces of each of the piezoelectric members. Provided on the substrate, a plurality of micro-displacement elements having a probe formed at a free end of a cantilever supported on an end face of the plurality of piezoelectric bodies opposite to the substrate of the plurality of piezoelectric bodies. Integrated actuator, a sample driving means for two-dimensionally scanning a sample arranged opposite to the probe of the integrated actuator in parallel to the surface of the sample, and each of the probes A scanning tunneling microscope comprising: voltage applying means for applying a voltage for generating a tunnel current between the sample and the sample. 2. A plurality of columnar-structured piezoelectric members arranged on the same circumference on the substrate with the polarization direction being a direction perpendicular to the surface of the substrate, and provided on each of opposing side surfaces of the respective piezoelectric members. Provided on the substrate, a plurality of micro-displacement elements having a probe formed at a free end of a cantilever supported on an end face of the plurality of piezoelectric bodies opposite to the substrate of the plurality of piezoelectric bodies. Integrated actuator, and a recording medium drive for two-dimensionally scanning a recording medium having an electric memory effect disposed opposite to the probe of the integrated actuator in parallel with a surface of the recording medium An information processing apparatus comprising: means for applying a current for generating a tunnel current between each of the probes and the recording medium.