JP3053971B2 - Three-dimensional displacement element for generating tunnel current, multi-tip unit using the three-dimensional displacement element for generating tunnel current, and information processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a three-dimensional displacement element for generating a tunnel current, a multi-probe unit using the three-dimensional displacement element for generating a tunnel current, which is used in a scanning tunnel microscope and its application equipment. The present invention relates to an information processing apparatus and an information processing method to which a scanning tunnel microscope is applied.

[0002]

2. Description of the Related Art In recent years, memory devices and memory systems have been used in a wide variety of applications, such as computers and related equipment, video disks, digital audio disks, and the like, and have become the core of the electronics industry. In the past, magnetic memory and semiconductor memory were mainstream,
With recent advances in laser technology, optical memory elements and the like using inexpensive and high-density recording media have appeared. However, with the use of computers for home use and the advancement of the information industry centering on images, the realization of a memory device or a recording / reproducing device having a larger storage capacity and a smaller volume is desired.

On the other hand, a scanning tunneling microscope (hereinafter, referred to as "STM") capable of directly observing the atomic structure of surface atoms of a conductor has been developed to enable high-resolution measurement in real space irrespective of single crystal or non-crystal. It has become. The STM uses a method in which a voltage is applied between a metal probe and a conductive material to approach a distance of about 1 nm to detect a tunnel current flowing between the two, so that the conductive material is not damaged. And can be observed with low power. Also,
Since it operates not only in ultra-high vacuum but also in the air and in solution, and can be used for various materials, a wide range of applications is expected. In particular, applications as a recording device for writing information in a conductive material (recording medium) with high resolution and a reproducing device for reading information written in a recording medium with high resolution have been promoted.

In such a recording / reproducing apparatus to which the STM technique is applied, the distance between the probe and the recording medium is controlled in angstrom units in order to bring the probe and the recording medium closer to about 1 nm. It is important to control the two-dimensional scanning in a plane perpendicular to the direction in units of tens of angstroms. Further, from the viewpoint of improving the recording / reproducing function, particularly from the viewpoint of speeding up, it has been proposed to simultaneously drive a plurality of probes (multiple probes). In this case, it is necessary to three-dimensionally control the relative position between the probe and the recording medium with the above accuracy within the area where the plurality of probes are arranged.

Conventionally, for this control, a tripod type piezoelectric element, a cylindrical type piezoelectric element, or the like attached to the probe side or the recording medium side is used. However, although these elements can provide a large displacement, they are not suitable for integration, and are disadvantageous for use in a multi-probe type recording / reproducing apparatus. Therefore, from this viewpoint, a probe is attached to each of the free ends of a plurality of micro cantilevers arranged on the same plane, and each of the cantilevers is pressed or electrostatically applied, and a distance direction between the probe and the recording medium is measured. Has been proposed. Also, as a related technology, STM
However, in the wafer, a structure supported by two pairs of elastic bodies so as to be displaceable in two different directions in the same plane is provided integrally with the wafer, and a probe is provided on the structure. There is also proposed a device in which a free end portion provided with a cantilever integrally displaceable in a direction perpendicular to the plane is provided, and the probe is three-dimensionally minutely displaced by electrostatic force.

[0006]

However, in the above-described conventional recording / reproducing apparatus, when recording / reproducing or erasing is actually performed using a plurality of probes, changes in the surrounding temperature, the support of the recording medium, and the like. Due to distortion of the probe support supporting the plurality of probes, breakage of the tips of the probes, etc., the distance between the tips of the probes and the corresponding recording positions on the recording medium is reduced. A minute displacement in the direction perpendicular to the distance direction occurs. Also, when the recording medium recorded by a certain probe support is replaced with another probe support by replacing the probe support, or when recording or erasing is subsequently performed, the tolerance range is also required. Similar minute positional deviations occur due to variations in the dimensions inside.

In such a case, in the above-mentioned conventional example, a minute positional deviation between each probe tip position and each corresponding recording position on the recording medium is individually corrected for each probe position and recording position. Recording, reproduction, and erasure cannot be performed simultaneously between all the probes and the recording medium,
Since it is necessary to perform the procedure of correcting the probe position and the recording position before recording / reproducing / erasing for each probe, it takes a long time to perform recording / reproducing / erasing with all the probes. There was a problem of cost.

Further, by applying the example of the conventional STM in which a structure integrally provided with a cantilever is displaced in a plane perpendicular to the direction of displacement of the cantilever by electrostatic force, the minute displacement described above can be individually determined. However, since the member (structure) displaced in the plane and the member (cantilever) displaced in the vertical direction are displaced independently of each other, the structure is complicated and the manufacturing process is complicated. Become. Further, since the probe is provided at the free end of the cantilever, the probe is tilted when the cantilever is displaced, which also causes a minute positional shift between the probe and the recording medium.

An object of the present invention is to provide a three-dimensional displacement element for generating a tunnel current, which has a simple structure, can easily correct the displacement of a probe, and can perform recording, reproduction and erasure in a short time. It is an object of the present invention to provide a multi-tip unit using a three-dimensional displacement element for generating current and an information processing device.

[0010]

Tunnel current three-dimensional displacement element for generating the present invention for achieving the Means for Solving the Problems] The above object, the probe is
A movable member provided, and a support portion for supporting the movable member
Material, for movably supporting the movable member in a three-dimensional direction, symmetrically disposed in two orthogonal directions, and
It is characterized by having a plurality of elastic members connected to a movable member and the support member, and electrostatic drive means for moving the movable member in at least two orthogonal directions .

Further, the multi-tip unit according to the present invention
The three-dimensional displacement element for generating a tunnel current according to the present invention is
It is characterized in that a plurality are arranged on the surface.

The information processing apparatus according to the present invention includes
Using a three-dimensional displacement element for tunnel current generation,
Record and replay information on a recording medium by detecting
It is the one that produces it.

[0013]

[0014]

[0015]

[0016]

In the present invention constructed as described above, when the position of the probe and the position of the recording medium disposed opposite to the probe are shifted, the movable member is displaced by the electrostatic driving means, and the probe is displaced. And the position of the recording medium are corrected. In addition , each elastic member is symmetrically arranged in two orthogonal directions.
When the movable member is displaced in the direction of the distance from the recording medium, the movable member is moved in parallel in the distance direction as it is, and the probe is not tilted. No misalignment with the recording medium occurs.

[0017]

[0018]

[0019]

Next, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a plan view of a first embodiment of a three-dimensional displacement element for generating a tunnel current according to the present invention, and FIG.
FIG. 3 is a sectional view taken along line AA of the three-dimensional displacement element for generating a tunnel current shown in FIG. As shown in FIGS. 1 and 2, in a hollow portion 102 of a frame 100 as a support member, a first elastic member 111 and a third elastic member each having a rectangular wave shape and provided integrally with the frame 100. 113 are arranged to face each other, and further, the second elastic member 112 and the fourth elastic member 114 similar to the first elastic member 111 and the third elastic member 113 are connected to the first elastic member 111 and the third elastic member 114, respectively. Perpendicular to the direction of the elastic member 113,
They are arranged facing each other. A micro stage 1 as a movable member is provided in a hollow portion 102 of the frame 100.
01 are the elastic members 111, 112, 113, 1
14 and are elastically supported. This frame 100 is formed by laminating a Si ₃ N ₄ film 105 as a thin film on a Si substrate 104, and includes a microstage 101 and elastic members 111, 112, 113,
Reference numeral 114 is formed from the Si ₃ N ₄ film 105.

At the center of one surface of the microstage 101, a conical probe 103 having a sharp tip and having conductivity is provided.
Is provided. The tip of the probe 103 is preferably as thin as possible to improve the resolution. Probe 103
The first wiring 131 for extracting the current detected by the probe 103 is provided from the base of the first elastic member 11.
1 has been pulled over. Micro Stage 10
1, a ground electrode 106 also serving as a shield is provided around the probe 103, and from the ground electrode 106, the second wiring 13 passes over the second elastic member 112.
2 is pulled out and the third elastic member 113
The third wiring 133 is drawn out above. A ground electrode 106 is provided at a portion of the frame 100 facing the end of the microstage 101 on the x direction side.
, An x-direction electrostatic actuator electrode 107 is provided. Similarly, a y-direction electrostatic actuator electrode 108 is provided near the ground electrode 106 at a portion of the frame 100 facing the end of the microstage 101 on the y-direction side. x-direction electrostatic actuator electrode 107 and y-direction electrostatic actuator electrode 10
8, a fourth wiring 134 and a fifth wiring 135 are respectively drawn out, and the ground electrode 106
It serves as a counter electrode of the x-direction electrostatic actuator electrode 107 and the y-direction electrostatic actuator electrode 108.

Here, the size of the above-described three-dimensional displacement element for generating a tunnel current according to the present embodiment is as follows. The hollow portion 102 has a length in the x direction and a length in the y direction of 200 μm. Micro Stage 101
Is 100 μm in both the length in the x direction and the length in the y direction.
m, the thickness (z direction) is 1 μm, and the distance between the ground electrode 106 on the microstage 101 and each of the electrostatic actuator electrodes 107 and 108 is 1 μm. Also,
Each of the elastic members 111, 112, 113, and 114 has a line width of 2 μm, a thickness of 1 μm, and an effective length (extended length of bending) of 100 μm. Thus, each of the elastic members 111, 112, 113, 114 is
Since it is formed of the i ₃ N ₄ film 105, it has extremely low rigidity and can be deformed in any direction.
01 can be slightly displaced in three directions of x, y and z. Also, each of the elastic members 111, 112, 113, 114
The displacement stroke of the microstage 101 within a range in which the elastic members 111, 112, 113, and 114 are within 1 μm in each of the xy directions and 5 μm or less in the z direction.
Is 3 N / m in each of the xy directions and 0.5 N / m in the z direction.

Based on the above configuration, the third wiring 13
When a voltage is applied between the third and fourth wirings 134, the x-direction electrostatic actuator electrode 107 and the ground electrode 10
The micro stage 101 can be finely displaced in the x-direction by the attraction force generated by the electrostatic force. Specifically, by applying a voltage of 15 V, the micro stage 101 is slightly displaced by 10 nm in the x direction. Similarly, the third wiring 133 and the fifth wiring 1
By applying a voltage between the micro stage 101 and the micro stage 101, the micro stage 101 is slightly displaced in the y direction. Although no driving means is provided in the z direction, the probe 103 comes into contact with a conductive substance (recording medium) arranged opposite to the probe 103 and receives a force in the z direction. Elastic member 11
1, 112, 113 and 114 are elastically deformed and finely displaced.

Next, a procedure for manufacturing the three-dimensional displacement element for generating a tunnel current according to this embodiment will be described. First, an Si ₃ N ₄ film 105 is formed on a Si substrate 104 by sputtering to a thickness of 1 μm.
m, and the Si ₃ N ₄ film 105 corresponding to the hollow portion 102 is removed by a photolithography method.
Patterns 112, 113 and 114 are formed. next,
After depositing Au on the Si ₃ N ₄ film 105 to a thickness of 0.1 μm, the ground electrode 10 is formed by photolithography.
6. The patterns of the respective electrostatic actuator electrodes 107 and 108 and the respective wirings 131, 132, 133, 134 and 135 are formed. Further, a probe 103 is formed at the center of the micro stage 101 by the Pt spint method or the C electron beam deposition method. Finally, the Si substrate 10
4, a portion to be the hollow portion 102 is removed by anisotropic etching using a KOH solution, and the microstage 101 is removed.
And each elastic member 111,112,113,114 is formed.

As described above, the three-dimensional displacement element for generating a tunnel current according to the present embodiment is formed of the Si ₃ N _{4 of the} frame 100.
From the membrane 105, each elastic member 111, 112, 113, 1
Since the 14 and the micro stage 101 are integrally formed, the configuration is simplified, the size can be further reduced, and the manufacturing process is also simplified. When displacing the microstage 101, all the elastic members 111, 1
12, 13, and 114 are deformed in the x, y, and z directions, respectively, to perform their functions, and thus the entire three-dimensional displacement element can be reduced in size. Further, since the microstage 101 is supported at the opposing portion,
When the microstage 101 is displaced in the z direction, x
The probe 1 is displaced in parallel to the y plane, the inclination of the probe 103 does not occur, and the probe 1 is placed in a state where the probe 103 and a conductive material (recording medium) arranged opposite to the probe 103 are in contact with each other.
Also, when scanning 03 in the xy directions, the microstage 101 is less likely to be twisted. As a result, probe 1
03 and the recording medium are less likely to shift in the xy directions.

Next, a description will be given of a second embodiment of the three-dimensional displacement element for generating a tunnel current according to the present invention.

FIG. 3 is a plan view of a second embodiment of the three-dimensional displacement element for generating a tunnel current according to the present invention, and FIG.
FIG. 3 is a sectional view taken along line BB of the three-dimensional displacement element for generating tunnel current shown in FIG. As shown in FIGS. 3 and 4, a micro stage 301 as a movable member is disposed in a hollow portion 302 of a frame 300 as a support member. The microstage 301 is provided integrally with two y-direction displacement elastic members 312 extending in the x-direction at both ends on the x-direction side. Also, the hollow portion 302
On four sides of the microstage 301, four intermediate members 309 and 310 are arranged integrally and elastically connected to each other by an intermediate member connecting elastic member 313, respectively. The two intermediate members 309 on the x-direction side of the microstage are integrally connected to the microstage 301 via respective y-direction displacement elastic members 312, and the microstage 3
01 is elastically supported. Furthermore, each intermediate member 30
9 and 310, two intermediate members 310 on the y-direction side of the microstage 301 each extend in the y-direction.
It is integrally connected to the frame 300 via each x-direction displacement elastic member 311, and is elastically supported by the frame 300. This allows microstage 3
01 is elastically supported by the frame 300 via each intermediate member 309, 310 including each y-direction displacement elastic member 312, each intermediate member connecting elastic member 313, and each x-direction displacement elastic member 311. Configuration. Also in this embodiment, the frame 300 is the same as in the first embodiment.
A micro-stage 301, elastic members 311, 312, 313 and intermediate members 309, 31 are formed by laminating a Si ₃ N ₄ film 305 as a thin film on an i-substrate 304.
0 is formed from the Si ₃ N ₄ film 305.

A probe 303 similar to that of the first embodiment is provided at the center of one surface of the microstage 301, and the current detected by the probe 303 is taken out from the root of the probe 303. Wiring 331 for y
Elastic member 312 for directional displacement, intermediate members 309, 310,
It is drawn out over the intermediate member connecting elastic member 313 and the x-direction displacement elastic member 311. The ground electrode 306, which also functions as a shield, is a microstage 301.
, A y-direction displacement elastic member 312 on one end side of the microstage 301, and an intermediate member 309 connected to the y-direction driving elastic portion 312 material. From the ground electrode 306, the second wiring 332 is drawn out through the intermediate member connecting elastic member 313 of the intermediate member 309 provided with the ground electrode 306 and the intermediate member 310 connected thereto, and The other intermediate member connecting elastic member 313 of the intermediate member 309 provided with the ground electrode 306
And a third wiring 333 is drawn out over the intermediate member 310 connected thereto. Also, the frame 300
Intermediate member 309 provided with the ground electrode 306
The x-direction electrostatic actuator electrode 307 is located close to the ground electrode 306 at a portion facing the end in the x-direction.
Is provided. Further, a portion of one of the intermediate members 310 disposed on the y-direction side of the micro-stage 301 and facing the end of the micro-stage 301 on the y-direction side is provided near the ground electrode 306 and in the y-direction electrostatic actuator electrode. 308 are provided. A fourth wiring 334 and a fifth wiring 335 are drawn out from the x-direction electrostatic actuator electrode 307 and the y-direction electrostatic actuator electrode 308, respectively, as in the first embodiment. Electrostatic actuator electrode 307 and y-direction electrostatic actuator electrode 30
8 as the opposite electrode.

Here, the size of the above-described three-dimensional displacement element for generating a tunnel current according to the present embodiment is as follows. The hollow portion 302 has a length in the x direction of 180 μm, y
The length in the direction is 200 μm. Micro stage 30
1 has a length in the x direction of 50 μm and a length in the y direction of 75 μm
m, and the thickness (z direction) is 1 μm. The distance between the ground electrode 306 on the microstage 301 and the y-direction electrostatic actuator electrode 308 and the distance between the ground electrode 306 on the intermediate member 309 and the x-direction electrostatic actuator electrode 307 are both 1 μm. Each of the elastic members 311, 312, and 313 has a line width of 2 μm.
And the thickness is 1 μm and the effective length is 50 μm. And
The displacement stroke of the microstage 301 within a range where the elastic members 311, 312, and 313 are not broken is xy.
The elastic constant of each elastic member 311, 312, 313 is 10 N / m in each of the xy directions, and 2 N / m in the z direction.

Based on the above configuration, the third wiring 33
When a voltage is applied between the third and fourth wirings 334, the x-direction electrostatic actuator electrode 307 and the ground electrode 30
6, the intermediate members 309 and 310 cause the respective x-direction displacement elastic members 3 to move.
11 are finely displaced integrally in the x direction while elastically deforming the same. At this time, since no deformation occurs in each of the y-direction displacement elastic members 312, the microstage 301 is finely moved in the x direction with the fine movement displacement of each of the intermediate members 309 and 310. Specifically, by applying a voltage of 15 V, the microstage 301 is slightly displaced by 10 nm in the x direction. Similarly, by applying a voltage between the third wiring 333 and the fifth wiring 335, the microstage 301 is slightly displaced in the y direction. The fine movement displacement in the z direction is the same as that of the first embodiment.
The conductive material (recording medium) disposed to face the probe 303
Elastic member 31 for connecting each intermediate member by contacting
3 is performed by the elastic deformation.

The manufacturing procedure of the three-dimensional displacement element for generating a tunnel current according to the present embodiment is as follows. First, a Si ₃ N ₄ film 305 is formed in a thickness of 1 μm on a Si substrate 304 by a sputtering method, By removing the Si ₃ N ₄ film 305 at the portion corresponding to the hollow portion 302, the pattern of the microstage 301, each of the intermediate members 309, 310, and each of the elastic members 311, 312, 313 are formed. next,
After depositing Au on the Si ₃ N ₄ film 305 to a thickness of 0.1 μm, the ground electrode 30 is formed by photolithography.
6. A pattern of each of the electrostatic actuator electrodes 307, 308 and each of the wirings 331, 332, 333, 334, 335 is formed. Further, a probe 303 is formed at the center of the microstage 301 by a Pt spint method or a C electron beam deposition method. Finally, the Si substrate 30
4, the portion that becomes the hollow portion 302 is removed by anisotropic etching using a KOH solution, and the microstage 30 is removed.
1. Each intermediate member 309, 310 and each elastic member 31
1, 312 and 313 are formed.

As described above, the three-dimensional displacement element for generating a tunnel current according to the present embodiment includes the elastic members 3 for displacement in the x direction.
11, three types of elastic members of each y-direction displacement elastic member 312 and each intermediate member connecting elastic member 313 are provided, and these various types of elastic members are used to perform displacement in the x, y, and z directions, respectively. Although the displacement element as a whole is slightly larger than that of the first embodiment and the structure becomes complicated,
There is little mutual interference between the displacements in the directions, and more precise control is possible.

Next, a multi-probe unit in which a plurality of three-dimensional displacement elements for generating a tunnel current according to the present invention are arranged on the same plane will be described.

FIG. 5 is a schematic structural view of one embodiment of the multi-probe unit of the present invention. As shown in FIG. 5, the present multi-tip unit has the same structure as that of the first embodiment of the three-dimensional displacement element for generating a tunnel current of the present invention shown in FIG.
The three-dimensional displacement elements for generating a tunnel current are arranged in a matrix on the same plane, and the integration of the three-dimensional displacement elements for generating a tunnel current is improved. Each of the tunnel current generating three-dimensional displacement elements is provided with a recording / reproducing circuit 551, an x-direction displacement correction circuit 552, and a y-direction displacement correction circuit 553, which are integrally integrated. Here, the configuration of each of the three-dimensional displacement elements for generating a tunnel current is the same as that shown in FIG.
1 and each of the displacement correction circuits 552 and 553 will be described.

Each recording / reproducing circuit 551 applies a recording signal from a recording signal circuit of the recording / reproducing apparatus to the probe 503, and outputs a current signal detected by the probe 503 to the reproducing signal circuit or the position of the recording / reproducing apparatus. This is a circuit for amplifying and converting before sending to the shift amount detecting circuit, and is electrically connected to the first wiring 531 of each tunnel current generating three-dimensional displacement element. Each x-direction misalignment correction circuit 552
Is a signal for correcting the displacement in the x direction of the tunnel current generating three-dimensional displacement element based on a signal from an x fine movement signal circuit that outputs a signal for finely moving the microstage 501 in the x direction. Direction electrostatic actuator electrode 5
07, which are electrically connected to the fourth wiring 534 of each three-dimensional displacement element for generating a tunnel current. Similarly, each y-direction displacement correction circuit 553 generates a signal for y-moving the micro-stage 501 in the y-direction based on a signal from a y-fine movement signal circuit to output a signal for the tunnel current generation three-dimensional displacement element. This is a circuit for applying a signal for correcting the displacement in the y direction to the y-direction electrostatic actuator electrode 508, and is electrically connected to the fifth wiring 535 of each three-dimensional displacement element for generating a tunnel current. . In this way, high speed and S /
Current detection with a good N ratio and high-speed and accurate positional displacement correction in the xy direction can be performed.

FIG. 6 shows a system configuration of a recording / reproducing apparatus as an information processing apparatus using the multi-tip unit shown in FIG. As shown in FIG. 6, a recording medium 607 provided on a substrate 606 is arranged to face the tip of each probe 503 of the multi-probe unit 601. The recording medium 607 is obtained by accumulating squarylium-bis-6-octylazulene having an electric memory effect by an LB method (accumulation method). When a voltage is applied, a portion to which the voltage is applied according to the voltage is applied. Changes from a high resistance state to a low resistance state, or changes from a low resistance state to a high resistance state. The substrate 606 is used to roughly position the recording medium 607 in the x and y directions with respect to the multi-probe unit 601, to perform an xy drive mechanism 608 for performing two-dimensional scanning, and to roughly position the recording medium 607 in the z direction. And a z-drive mechanism 609. xy drive mechanism 608 and z drive mechanism 6
09 is driven by signals output from the xy drive circuit 610 and the z drive circuit 611 under the control of the host computer 612 which is a higher-level device of the present recording / reproducing apparatus.

On the other hand, each probe 503 of the multi-probe unit 601 has a recording signal circuit 613 as recording means for applying a recording signal to each probe 503, and a recording medium 607.
A reproduction signal circuit 617 as reproduction means for reading a current flowing between the probe 503 and each probe 503, and a displacement detection for detecting a displacement of each probe 503 with respect to each recording area on the recording medium 607. The displacement detection circuit 619 as a means is electrically connected via a first switching circuit 614, a second switching circuit 616, and a third switching circuit 618 for switching input / output signals for each probe 503, respectively. It is connected to the. Further, the xy fine movement signal circuit 620 as a correction signal output means, which includes the x fine movement signal circuit and the y fine movement signal circuit described in FIG. 5, is used to switch the input signal for each electrostatic actuator electrode.
Probe unit 60 via the switching circuit 621 of
1 and further, a bias voltage application circuit 615 is electrically connected to the substrate 606 and each ground electrode 506 of the multi-tip unit 601.

The details of recording and reproduction by the recording and reproduction apparatus will be described below. First, recording will be described. A recording signal output from the recording signal circuit 613 based on a signal from the host computer 612 is input to the first switching circuit 614. The first switching circuit 614 switches the output destination of the recording signal input from the recording signal circuit 613 for each probe 503 according to a timing signal from the host computer 612. As a result, a recording signal based on the control of the host computer 612 is applied to each probe 503, and recording on the recording medium 607 is performed. At this time, the voltage applied to each probe 503 is a voltage sufficient for the recording medium 607 to change from a high resistance state to a low resistance state at that site. Next, reproduction will be described. The bias voltage is applied to the recording medium 607 through the substrate 606 by the bias voltage application circuit 615.
The current flowing between the recording medium 607 and each probe 503 is switched by the timing signal from the host computer 612 by the second switching circuit 616 for each probe 503 while being applied to the read signal circuit 617. Output to The reproduction signal circuit 617 outputs the input value to the host computer 612 as a read signal, and thereby performs reproduction. Here, as the recording medium 607, any material may be used as long as it causes a change in the flowing current by causing a shape change by applying a voltage from each probe 503 or an electronic state change. For reproduction, it is not always necessary to use a direct current. For example, a method of detecting a local change in electric capacity of a recording portion in the recording medium 607 using a high-frequency electric signal may be used.

As described above, when recording / reproducing or erasing is performed, in practice, the ambient temperature change, the distortion of the recording medium 607 or the multi-probe unit 601 in the xy directions,
Due to breakage of the tip of the probe 503, etc., a minute positional shift in the xy direction occurs between the position of the tip of each probe 503 and the recording position on the recording medium 697 corresponding to each probe 503. Also, when a recording medium recorded by a certain multi-probe unit is reproduced by another multi-probe unit, subsequently recorded, or erased, the tolerance within the tolerance range of each probe unit is also required. A similar minute displacement occurs due to the variation in the dimensions.

These displacements will be described with reference to FIGS. 7 and 8. FIG. 7 is a schematic plan view of a recording medium having a plurality of recording areas in which circumferential tracks are arranged concentrically, corresponding to the positions of the respective probes.
FIG. 8 is a schematic plan view of a recording medium having a plurality of recording areas in which linear tracks are arranged in parallel corresponding to the positions of the probes. In both figures, positions 703 and 803 of the tip of the probe are indicated by crosses. Each arrow shown in FIG. 7 extends from the position 703 of the tip of the probe toward the center 704 of the recording area, and indicates the displacement between the position 703 of the tip of the probe and the center 704 of the recording area in vector. Each arrow shown in FIG. 8 extends from the position 803 of the tip of the probe toward the start position 804 of the recording area, and indicates the deviation between the position 803 of the tip of the probe and the start position 804 of the recording area in a vector-like manner. It is shown in FIG. Now, in FIG. 7, when the position of the center 704 of the upper left recording area in FIG. 7 is matched with the position 703 of the tip of the probe corresponding to the recording area 702, the center of the recording area for each of the other recording areas 702 is changed. Between the point 704 and the position 703 of the tip of the probe, deviations in size and direction, as indicated by arrows, respectively occur. If recording / reproducing / erasing is performed in this state, there is a shift between each probe and the corresponding recording bit 705 of the recording area 702, so that all the probes and the recording area 702 have a different position. Recording, reproduction, and erasure cannot be performed at the same time. Similarly, in FIG. 8, if the head position 804 of the upper left recording area in FIG. 8 is matched with the corresponding tip position 803 of the probe, the other probe and the recording bit 805 of the corresponding recording area 802 are obtained. , And recording, reproduction, and erasure cannot be performed simultaneously with all the probes.

Therefore, as shown in FIG. 9, each x-direction electrostatic actuator electrode 507 causes a minute displacement in the x-direction between each probe 503 and the recording bit 905 in the recording area for each probe 503. Is corrected. In the figure, the positions of the probe 503 and the microstage 501 before correction are indicated by broken lines, and the positions after correction are indicated by solid lines. In addition, similarly to the x direction, the minute positional deviation in the y direction is corrected for each probe 503 by each y direction electrostatic actuator electrode 508 (see FIG. 5). As a result, 503 of all the probes
The position matches the position of the recording bit 905 in each recording area. As described above, once the displacement with respect to the recording area is corrected once for each probe 503, until the displacement again occurs due to temperature change or distortion, damage to the probe 503, replacement of the multi-probe unit, or the like. Since there is no need to make corrections, these corrections do not need to perform feedback control and have a simple circuit configuration. Further, since the electric signal band for correction can be reduced, the signal noise is small, and the position deviation can be corrected with extremely high accuracy.

The procedure of the above-described displacement correction will be described again with reference to FIG. A minute concave or convex is provided in advance at a predetermined portion of a recording area corresponding to each probe 503 on a surface of the recording medium 607 facing each probe 503 by a photolithography method or irradiation of an electron beam. This is used as a reference position. Next, while applying a bias voltage to the recording medium 607 by the bias voltage application circuit 615, the recording medium 607 is two-dimensionally scanned in the xy direction with respect to the multi-probe unit 601 by the xy drive mechanism 610. Then, the tunnel current flowing between the recording medium 607 and each probe 503 is switched by the third switching circuit 618 according to a timing signal from the host computer 612, and the position is detected by the third switching circuit 618. Output. Position shift amount detection circuit 619
Then, the amount of displacement of each probe 503 with respect to each reference position on the recording medium 607 is detected based on the change in the tunnel current when the probe 503 is at the reference position. The displacement information between each probe 503 and each reference position detected by the displacement detection circuit 619 is stored in the host computer 61.
Sent to 2. Based on this, a position correction signal between each probe 503 and each reference position is sent to the xy fine movement signal circuit 620, and is switched by the fourth switching circuit 621 according to a timing signal from the host computer 612, and each x direction electrostatic force is switched. Actuator electrode 507 (see FIG. 5) or y
It is applied to the direction electrostatic actuator electrode 508 (see FIG. 5), and the position of each probe 503 is corrected.

As described above, by performing minute displacement correction in the xy direction for each probe 503, each probe can be scanned two-dimensionally in the xy direction with respect to the multi-probe unit 601. Recording, reproduction, and erasure can be simultaneously performed between the hand 503 and each recording area.

Next, the function of the three-dimensional displacement element in the z-direction displacement by the recording / reproducing apparatus will be described with reference to FIG.

As shown in FIG. 10, the length of each probe 503 slightly varies due to the dimensional variation within the tolerance range.
There is a slight undulation on itself and also on the surface of the recording medium 607. For this reason, the multi-tip unit 60
1 and the recording medium 607, each probe 503
The distance between the recording medium 607 and the surface of the recording medium 607 varies. The microstage 501 to which each probe 503 is attached is a plurality of elastic members 111 and 11.
2, 113, 114 (see FIG. 1), when a certain probe 503 comes into contact with the recording medium 607 and receives a force, each of the elastic members 111, 112,
113 and 114 are elastically deformed. Due to this elastic deformation, the microstage 501 is displaced in the positive direction of the z-axis in the figure, preventing the force of a certain value or more from being applied to the tip of the probe 503 and the recording medium 607. As a result, the tip of the probe 503 In addition, damage to the recording medium 607 can be prevented.
For example, if the variation in the distance between each probe 503 and the surface of the recording medium 607 is about 1 μm,
01 to 2 N / m
Then, the force applied to the tip of the probe 503 and the recording medium 607 can be suppressed to 5 × 10 ⁻⁷ to 2 × 10 ⁻⁶ N or less. Since the control of the z-direction displacement as described above is passive,
In particular, there is no need to provide an electric circuit, and there is an advantage that an extremely simple configuration is sufficient.

[0046]

Since the present invention is configured as described above, the following effects can be obtained.

Since the three-dimensional displacement element for generating a tunnel current has an electrostatic driving means, even if the position of the probe and the position of the recording medium arranged opposite to the probe are shifted, the movable member is driven. The position of the probe can be corrected to a normal position. In addition , each elastic member is arranged in two orthogonal directions.
Since the movable member and the support member are connected symmetrically, the probe does not tilt when the movable member is displaced in the distance direction to the recording medium, and the probe is brought into contact with the recording medium. When scanning is performed in the state, the movable member is less likely to be twisted, and is less likely to be displaced from the recording medium. Furthermore, for generating a tunnel current of the present invention.
By using a three-dimensional displacement element for an information processing device,
Information can be recorded, reproduced, and erased at high speed.

[0048]

[0049]

[0050]

[Brief description of the drawings]

FIG. 1 is a schematic plan view of a first embodiment of a three-dimensional displacement element for generating a tunnel current according to the present invention.

FIG. 2 is a sectional view taken along line AA of the three-dimensional displacement element for generating tunnel current shown in FIG.

FIG. 3 is a schematic plan view of a second embodiment of the three-dimensional displacement element for generating a tunnel current according to the present invention.

FIG. 4 is a sectional view taken along line BB of the three-dimensional displacement element for generating a tunnel current shown in FIG. 3;

FIG. 5 is a schematic configuration diagram of an embodiment of the multi-tip unit of the present invention.

6 is a schematic configuration diagram of a recording / reproducing apparatus using the multi-tip unit shown in FIG.

FIG. 7 is a schematic plan view of a recording medium having a plurality of recording areas in which circumferential tracks are concentrically arranged corresponding to the positions of the respective probes.

FIG. 8 is a schematic plan view of a recording medium having a plurality of recording areas in which linear tracks are arranged in parallel corresponding to the positions of the probes.

9 is a diagram for explaining correction of a shift in the xy direction between a probe and a recording bit in the recording / reproducing apparatus shown in FIG. 6;

FIG. 10 is a view for explaining a control mechanism of a distance between each probe and a recording medium in the recording / reproducing apparatus shown in FIG. 6;

[Explanation of symbols]

100, 300 Frame 101, 301, 501 Microstage 102, 302 Hollow portion 103, 303, 503 Probe 104, 304 Si substrate 105, 305 Si ₃ N ₄ film 106, 306, 506 Ground electrode 107, 307, 507 x direction Electrostatic actuator electrodes 108, 308, 508 y-direction electrostatic actuator electrodes 111 first elastic member 112 second elastic member 113 third elastic member 114 fourth elastic member 131, 331, 531, first wiring 132, 332 Second wiring 133, 333 Third wiring 134, 334, 534 Fourth wiring 135, 335, 535 Fifth wiring 309, 310 Intermediate member 311 Elastic member for x-direction displacement 312 Elastic member for y-direction displacement 313 Elastic member 551 for connecting intermediate member Recording / reproducing circuit 52 x-direction displacement correction circuit 553 y-direction displacement correction circuit 601 multi-probe unit 606 substrate 607 recording medium 608 xy drive mechanism 609 z drive mechanism 610 xy drive circuit 611 z drive circuit 612 host computer 613 recording signal circuit 614 first Switching circuit 615 Bias voltage application circuit 616 Second switching circuit 617 Reproduction signal circuit 618 Third switching circuit 619 Position shift amount detection circuit 620 xy fine movement signal circuit 621 Fourth switching circuit 701, 801 Track 702, 802 Recording area 703, 803 Position of probe tip 704 Center of recording area 705, 805 Recording bit 804 Head position of recording area

──────────────────────────────────────────────────続 き Continuing on the front page (72) Kunihiro Sakai 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Katsunori Hatanaka 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon (56) References JP-A-4-162229 (JP, A) JP-A-4-205828 (JP, A) JP-A-3-173957 (JP, A) JP-A-2-50333 (JP, A A) JP-A-3-49087 (JP, A) JP-A-2-147804 (JP, A) JP-A-2-38904 (JP, A) JP-A-4-296604 (JP, A) (58) Survey Field (Int.Cl. ⁷ , DB name) G11B 9/14 B81B 3/00 G01N 13/12 G12B 21/20

Claims (3)

(57) [Claims] A movable member provided with a probe; a support member for supporting the movable member; and a linear member for supporting the movable member movably in a three-dimensional direction.
The movable part is symmetrically arranged in two intersecting directions, and
A plurality of elastic members connected to a member and the support member; and electrostatic drive means for moving the movable member in at least two orthogonal directions. . 2. The tunnel current generating device according to claim 1,
A plurality of dimensional displacement elements are arranged on the same plane
Multi-probe unit according to claim. 3. The tunnel current generating device according to claim 1,
Using a three-dimensional displacement element to detect tunnel current
An information processing apparatus for recording and reproducing information on a recording medium .