JP3078824B2 - High frequency sputtering equipment - Google Patents

High frequency sputtering equipment

Info

Publication number
JP3078824B2
JP3078824B2 JP02177793A JP17779390A JP3078824B2 JP 3078824 B2 JP3078824 B2 JP 3078824B2 JP 02177793 A JP02177793 A JP 02177793A JP 17779390 A JP17779390 A JP 17779390A JP 3078824 B2 JP3078824 B2 JP 3078824B2
Authority
JP
Japan
Prior art keywords
phase
signal
frequency power
power supply
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02177793A
Other languages
Japanese (ja)
Other versions
JPH0466665A (en
Inventor
敬治 山田
顕弘 北畠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Vacuum Industries Co Ltd
Original Assignee
Sanyo Vacuum Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Vacuum Industries Co Ltd filed Critical Sanyo Vacuum Industries Co Ltd
Priority to JP02177793A priority Critical patent/JP3078824B2/en
Publication of JPH0466665A publication Critical patent/JPH0466665A/en
Application granted granted Critical
Publication of JP3078824B2 publication Critical patent/JP3078824B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 <産業上の利用分野> 本発明はスパッタリングによる薄膜の製造装置に関す
る。
Description: TECHNICAL FIELD The present invention relates to an apparatus for producing a thin film by sputtering.

<従来の技術> 従来は、単一の発信器の出力を分配器によりターゲッ
ト数nの系に分配したのち、これを高周波電力増幅し、
インピーダンスマッチングして各ターゲットを駆動して
いたが、周波数が13.56MHzと高く、ターゲットに至る配
線長に長短があるため、各ターゲットに印加される高周
波電力の位相に多少のずれがあった。また、例えば、特
開昭60−29467号公報記載のように同一チャンバー内に
設けられた複数のターゲットのそれぞれに高周波発振回
路を共通にしながら電力供給系に位相補正回路を設ける
とともに、この系の出力周波数と他の系の出力周波数を
位相比較する位相検出回路を設け、この位相検出回路の
出力により上記位相補正回路を制御する装置が開示され
ている。
<Prior Art> Conventionally, after distributing the output of a single oscillator to a system having a target number n by a distributor, this is amplified with high frequency power,
Although each target was driven by impedance matching, the frequency was as high as 13.56 MHz, and the wiring length to the target was long and short, so that the phase of the high-frequency power applied to each target was slightly shifted. Further, for example, as described in JP-A-60-29467, a phase correction circuit is provided in a power supply system while sharing a high-frequency oscillation circuit for each of a plurality of targets provided in the same chamber. There is disclosed an apparatus provided with a phase detection circuit for comparing the output frequency with the output frequency of another system and controlling the phase correction circuit based on the output of the phase detection circuit.

<発明が解決しようとする課題> 同一チャンバーに複数ターゲットを配置した場合、高
周波による相互干渉が起こり、製膜時における再現性に
欠ける。従ってターゲットの位相を同一にすることが必
要であり、また例えば異常放電などによる外乱によって
引き起こされる他の回路への影響を避けなければならな
い。本発明はこのような課題を解決する。
<Problems to be Solved by the Invention> When a plurality of targets are arranged in the same chamber, mutual interference occurs due to high frequency, and reproducibility during film formation is lacking. Therefore, it is necessary to make the phases of the targets the same, and it is necessary to avoid the influence on other circuits caused by disturbance due to, for example, abnormal discharge. The present invention solves such a problem.

<課題を解決するための手段> 本発明の高周波スパッタリング装置は、単一の発振信
号を発振する発振器と、この発振信号をn個に分配する
分配器と、その分配器により分配されたそれぞれの発振
信号を移相させるn個の移相器と、それぞれの移相器出
力により高周波電源を出力するn個の高周波電源回路
と、そのn個の高周波電源回路によりn個のターゲット
を駆動するターゲット駆動回路と、上記発振信号を基準
信号とし、上記ターゲット近傍の高周波電力の位相をフ
ィードバック信号とする偏差により上記移相器の移相角
を制御するn個の移相制御手段を有している。
<Means for Solving the Problems> A high-frequency sputtering apparatus according to the present invention includes an oscillator that oscillates a single oscillating signal, a distributor that divides the oscillating signal into n signals, and each of the distributors that are distributed by the distributor. N phase shifters for phase-shifting an oscillation signal, n high-frequency power supply circuits for outputting high-frequency power by each phase shifter output, and targets for driving n targets by the n high-frequency power supply circuits A drive circuit, and n number of phase shift control means for controlling a phase shift angle of the phase shifter by a deviation using the oscillation signal as a reference signal and the phase of the high-frequency power near the target as a feedback signal. .

<作用> n個の移相制御手段がその系に属している移相器の移
相角を制御しているので、n個の各ターゲットの駆動電
源の位相は発信器の発信信号の位相と常に一致してい
る。発信器は唯1個しかなくn個の制御系に共用されて
いるのでn個のすべてのターゲットの位相は一致したも
のとなる。
<Operation> Since the n phase shift control means controls the phase shift angles of the phase shifters belonging to the system, the phases of the drive power sources of the n targets are different from the phase of the transmission signal of the transmitter. Always match. Since there is only one transmitter and is shared by n control systems, all n targets have the same phase.

<実施例> 図面に本発明の実施例のブロック図を示す。発振器1
は周波数13.56MHzの正弦波を発振する。発振器1は分配
器2に接続されており、分配器2により発振信号はn個
に分配される。n個に分配された発信信号は各系の位相
器3により移送される。この移相器3は位相比較器6の
出力信号の大きさに応じて位相角が変化する。高周波電
源回路4は、高周波電力増幅回路とその直流電源回路よ
り構成され、移相後の高周波信号と同一周波数の正弦波
電力を出力する。この電源回路の出力はインピーダンス
マッチング回路5を経てターゲット7に印加される。位
相検出器8はターゲット近傍の高周波の位相を検出しこ
れをフィードバック信号として位相比較器6に送る。位
相比較器6は上記発振器1の出力信号を基準信号とし、
フィードバック信号との移相角の偏差を0にすべく制御
信号を移相器3に送る。その結果、n個の各ターゲット
の駆動電源は発信器1と同位相になるよう制御される。
<Example> A block diagram of an example of the present invention is shown in the drawings. Oscillator 1
Oscillates a 13.56 MHz sine wave. The oscillator 1 is connected to the divider 2, and the divider 2 divides the oscillation signal into n signals. The transmission signals distributed to n units are transferred by the phase shifters 3 of the respective systems. The phase shifter 3 changes the phase angle according to the magnitude of the output signal of the phase comparator 6. The high-frequency power supply circuit 4 includes a high-frequency power amplifier circuit and its DC power supply circuit, and outputs sine-wave power having the same frequency as the phase-shifted high-frequency signal. The output of this power supply circuit is applied to the target 7 via the impedance matching circuit 5. The phase detector 8 detects a high-frequency phase near the target and sends it to the phase comparator 6 as a feedback signal. The phase comparator 6 uses the output signal of the oscillator 1 as a reference signal,
A control signal is sent to the phase shifter 3 to make the deviation of the phase shift angle from the feedback signal zero. As a result, the drive power of each of the n targets is controlled to be in phase with the transmitter 1.

<発明の効果> 本発明によれば、各系のターゲット駆動出力を単一の
発振器の発振信号により制御するフィードバック機構を
有するので、各ターゲットの位相は唯1個の発信器出力
に揃うものになり、しかも、ターゲットのひとつに異常
放電、外乱による影響などが発生しても、一回路の障害
が他のターゲットの位相に影響を与えることがなく、安
定化された。従って、ターゲット間の位相差による効果
の低減など不測の現象がなくなり、製膜時の再現性が向
上し、品質が均一化された。
<Effects of the Invention> According to the present invention, since a feedback mechanism for controlling the target drive output of each system by the oscillation signal of a single oscillator is provided, the phase of each target is aligned with only one oscillator output. In addition, even if abnormal discharge, disturbance, or the like occurs in one of the targets, the failure of one circuit does not affect the phase of the other target, and the target is stabilized. Therefore, unexpected phenomena such as reduction of the effect due to the phase difference between the targets were eliminated, the reproducibility at the time of film formation was improved, and the quality was made uniform.

【図面の簡単な説明】[Brief description of the drawings]

図面は本発明の装置のブロック図である。 1……発振器、2……分配器 3……移相器、4……高周波電源回路 5……インピーダンスマッチング回路 6……位相比較器 7……ターゲット 8……位相検出器 The drawing is a block diagram of the device of the present invention. DESCRIPTION OF SYMBOLS 1 ... Oscillator 2 ... Divider 3 ... Phase shifter 4 ... High frequency power supply circuit 5 ... Impedance matching circuit 6 ... Phase comparator 7 ... Target 8 ... Phase detector

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) C23C 14/00 - 14/58 H01L 21/203 H01L 21/31 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) C23C 14/00-14/58 H01L 21/203 H01L 21/31

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】単一の発振信号を発振する発振器と、この
発振信号をn個に分配する分配器と、その分配器により
分配されたそれぞれの発振信号を移相させるn個の移相
器と、それぞれの移相器出力により高周波電源を出力す
るn個の高周波電源回路と、そのn個の高周波電源回路
によりn個のターゲットを駆動するターゲット駆動回路
と、上記発振信号を基準信号とし、上記ターゲット近傍
の高周波電力の移相をフィードバック信号とする偏差に
より上記移相器の移相角を制御するn個の移相制御手段
とを有する高周波スパッタリング装置。
An oscillator for oscillating a single oscillating signal, a distributor for distributing the oscillating signal into n units, and n phase shifters for phase-shifting each of the oscillating signals distributed by the distributor And n high-frequency power supply circuits for outputting high-frequency power supply by respective phase shifter outputs, a target drive circuit for driving n targets by the n high-frequency power supply circuits, and the oscillation signal as a reference signal, A high frequency sputtering apparatus comprising: n number of phase shift control means for controlling a phase shift angle of the phase shifter by a deviation using a phase shift of the high frequency power near the target as a feedback signal.
JP02177793A 1990-07-04 1990-07-04 High frequency sputtering equipment Expired - Fee Related JP3078824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02177793A JP3078824B2 (en) 1990-07-04 1990-07-04 High frequency sputtering equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02177793A JP3078824B2 (en) 1990-07-04 1990-07-04 High frequency sputtering equipment

Publications (2)

Publication Number Publication Date
JPH0466665A JPH0466665A (en) 1992-03-03
JP3078824B2 true JP3078824B2 (en) 2000-08-21

Family

ID=16037197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02177793A Expired - Fee Related JP3078824B2 (en) 1990-07-04 1990-07-04 High frequency sputtering equipment

Country Status (1)

Country Link
JP (1) JP3078824B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6004921B2 (en) * 2012-11-28 2016-10-12 株式会社アルバック Sputtering apparatus, thin film manufacturing method
JP2014159614A (en) * 2013-02-19 2014-09-04 Ulvac Japan Ltd Sputtering apparatus and sputtering method

Also Published As

Publication number Publication date
JPH0466665A (en) 1992-03-03

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