JP3059193B2 - Voltage non-linear resistor - Google Patents

Voltage non-linear resistor

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Publication number
JP3059193B2
JP3059193B2 JP02149103A JP14910390A JP3059193B2 JP 3059193 B2 JP3059193 B2 JP 3059193B2 JP 02149103 A JP02149103 A JP 02149103A JP 14910390 A JP14910390 A JP 14910390A JP 3059193 B2 JP3059193 B2 JP 3059193B2
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JP
Japan
Prior art keywords
atomic
voltage non
voltage
added
linear resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02149103A
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Japanese (ja)
Other versions
JPH03278404A (en
Inventor
豊重 坂口
和郎 向江
孝一 津田
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to DE4102756A priority Critical patent/DE4102756A1/en
Priority to US07/648,132 priority patent/US5140296A/en
Publication of JPH03278404A publication Critical patent/JPH03278404A/en
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Publication of JP3059193B2 publication Critical patent/JP3059193B2/en
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Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電圧非直接抵抗体、さらに詳しくは過電圧保
護用素子として用いられる酸化亜鉛(ZnO)を主成分と
した電圧非直接抵抗体に関する。
Description: TECHNICAL FIELD The present invention relates to a voltage non-direct resistor, and more particularly to a voltage non-direct resistor mainly composed of zinc oxide (ZnO) used as an overvoltage protection element.

〔従来の技術〕[Conventional technology]

従来、電子機器、電気機器の過電圧保護を目的として
シリコンカーバイト(SiC),セレン(Se),シリコン
(Si)またはZnOを主成分としたバリスタが利用されて
いる。中でもZnOを主成分としたバリスタ,アレスタ素
子は、一般に制限電圧が低く、電圧非直線指数が大きい
などの特徴を有している。そのため半導体素子のような
過電流耐量の小さいもので構成される機器の過電圧に対
する保護に適しているので、SiCからなるバリスタなど
に代わって広く利用されるようになった。また電力機器
の保護を目的とするアレスタ素子としても広く利用され
ている。
Conventionally, varistors containing silicon carbide (SiC), selenium (Se), silicon (Si), or ZnO as a main component have been used for the purpose of overvoltage protection of electronic devices and electric devices. Among them, varistors and arrester elements containing ZnO as a main component generally have characteristics such as a low limiting voltage and a large voltage non-linear index. For this reason, it is suitable for protection against overvoltage of devices composed of devices having a small overcurrent capability, such as semiconductor devices, and has been widely used instead of varistors made of SiC. It is also widely used as an arrester element for the purpose of protecting power equipment.

これに対して、ZnOを主成分として希土類元素を0.08
〜5.0原子%,コバルト(Co)を0.1〜10.0原子%,マグ
ネシウム(Mg)、カルシウム(Ca)のうち少なくとも一
種を0.01〜5.0原子%,カリウム(K)、セシウム(C
s)、ルビジウム(Rb)のうち少なくとも一種を0.01〜
1.0原子%,クロム(Cr)を0.01〜1.0原子%,ホウ素
(B)を5×10-4〜1×10-1原子%,アルミニウム(A
l)、ガリウム(Ga)、インジウム(In)のうち少なく
とも一種を1×10-4〜5×10-2原子%添加し焼成するこ
とにより製造される電圧非直線抵抗体が、電圧非直線
性,サージ耐量,課電寿命特性に優れたものであること
が特公平1−25205号公報に記載されている。
On the other hand, rare earth elements containing ZnO as a main component
-5.0 atomic%, cobalt (Co) 0.1-10.0 atomic%, magnesium (Mg), at least one of calcium (Ca) 0.01-5.0 atomic%, potassium (K), cesium (C
s) and at least one of rubidium (Rb) from 0.01 to
1.0 atomic%, chromium (Cr) 0.01 to 1.0 atomic%, boron (B) 5 × 10 -4 to 1 × 10 -1 atomic%, aluminum (A
l), at least one of gallium (Ga) and indium (In) is added in an amount of 1 × 10 −4 to 5 × 10 −2 atomic%, and the resulting non-linear resistor is manufactured by firing. It is described in Japanese Patent Publication No. 25205/1992 that it has excellent surge resistance, surge withstand capability and power application life characteristics.

また、他にZnOを主成分としてプラセオジムを0.1〜5.
0原子%,コバルト(Co)を0.5〜5.0原子%,カリウム
(K)、セシウム(Cs)、ルビジウム(Rb)のうち二元
素以上を総量で0.06〜0.6原子%,クロム(Cr)を0.05
〜0.5原子%添加し焼成することにより製造される電圧
非直線抵抗体が、電圧非直線性に優れたものであること
が特公昭62−14924号公報に記載されている。
In addition, praseodymium containing ZnO as a main component is 0.1 to 5.
0 atomic%, cobalt (Co) 0.5-5.0 atomic%, potassium (K), cesium (Cs), rubidium (Rb) at least two elements of 0.06-0.6 atomic%, chromium (Cr) 0.05
Japanese Patent Publication No. Sho 62-14924 discloses that a voltage non-linear resistor produced by adding 0.5 to 0.5 atomic% and firing is excellent in voltage non-linearity.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかし、このような電圧非直線抵抗体にも、なお以下
に述べる問題がある。
However, such a voltage non-linear resistor still has the following problem.

電圧非直線抵抗体は電流1mAを流したときの単位厚さ
当たりの電圧〔以下、V1mA/t(V/mm)〕と、単位体積当
たりのサージエネルギー吸収能力〔以下、許容エネルギ
ー(KJ/cm3)〕の双方の特性を満足しなければならな
い。ところが、V1mA/tを高くすると許容エネルギーが低
下するので、例えば焼成条件などを変えて、粒子の成長
を抑制することにより、V1mA/tは200V/mm程度としてい
る。しかし、例えば避雷器などに用いる場合、その高さ
寸法を小さくするなどの小型化や、コストの低減などの
点からはV1mA/tは300V/mm以上とすることが望まれる。
The voltage non-linear resistor has a voltage per unit thickness (hereinafter, V 1 mA / t (V / mm)) when a current of 1 mA flows, and a surge energy absorbing capacity per unit volume (hereinafter, allowable energy (KJ / cm 3 )]. However, if V 1 mA / t is increased, the allowable energy is reduced. Therefore, V 1 mA / t is set to about 200 V / mm by, for example, changing the firing conditions and suppressing the growth of particles. However, for example, when used for a lightning arrester, it is desirable that V1mA / t be 300 V / mm or more from the viewpoint of miniaturization such as reducing the height dimension and cost reduction.

本発明は上述の点に鑑みてなされたものであり、その
目的は、V1mA/tを300V/mm以上に高くしたとき、従来の2
00V/mmとしたときにおけると同等以上の許容エネルギー
を有する電圧非直線抵抗体を提供することにある。
The present invention has been made in view of the above-described points, and its object is to increase the V 1 mA / t to 300 V / mm or more by using the conventional method.
An object of the present invention is to provide a voltage non-linear resistor having an allowable energy equal to or higher than that when the voltage is set to 00 V / mm.

〔課題を解決するための手段〕[Means for solving the problem]

上記の課題を解決するために、本発明の電圧非直線抵
抗体はZnOを主成分として希土類元素を0.08〜5.0原子
%,Coを0.1〜10.0原子%,Mg、Caのうち少なくとも一種
を0.01〜5.0原子%,K、Cs、Rbのうち少なくとも一種を
0.01〜1.0原子%,Crを0.01〜1.0原子%,Bを5×10-4
1×10-1原子%,Al、Ga、Inのうち少なくとも一種を1
×10-4〜5×10-2原子%,アンチモン(Sb)、ニオブ
(Nb)、タンタル(Ta)、燐(P)のうち少なくとも一
種を1×10-3〜5×10-2原子%の範囲で添加し焼成した
ものとする。
In order to solve the above problems, the voltage non-linear resistor of the present invention is composed of ZnO as a main component, a rare earth element of 0.08 to 5.0 atomic%, Co of 0.1 to 10.0 atomic%, Mg, at least one of Mg and Ca of 0.01 to 5.0 atomic%. 5.0 at%, at least one of K, Cs and Rb
0.01-1.0 atomic%, Cr 0.01-1.0 atomic%, B 5 × 10 -4
1 × 10 -1 atomic%, at least one of Al, Ga and In
× 10 -4 to 5 × 10 -2 atomic%, at least one of antimony (Sb), niobium (Nb), tantalum (Ta) and phosphorus (P) is 1 × 10 -3 to 5 × 10 -2 atomic% And fired.

また、他の手段として、ZnOを主成分としてプラセオ
ジムを0.1〜5.0原子%,Coを0.5〜5.0原子%,Kを0.05〜
0.5原子%,Crを0.05〜0.5原子%,アンチモン(Sb)、
ニオブ(Nb)の少なくとも一種を1×10-3〜5×10-2
子%の範囲で添加し焼成したものとする。
Further, as another means, praseodymium containing ZnO as a main component is 0.1 to 5.0 atomic%, Co is 0.5 to 5.0 atomic%, and K is 0.05 to 5.0 atomic%.
0.5 atomic%, Cr 0.05-0.5 atomic%, antimony (Sb),
It is assumed that at least one kind of niobium (Nb) is added in a range of 1 × 10 −3 to 5 × 10 −2 atomic% and fired.

〔作用〕[Action]

上記の如く本発明は、前述の特公平1−25205号公報
に開示されている電圧非直線抵抗体成分に、さらにSb,N
b,Ta,Pのうち少なくとも一種を添加し焼成する、あるい
は前述の特公昭62−14924号公報に開示されている電圧
非直線抵抗体成分に、さらにSb,Nbの少なくとも一種を
添加し焼成することにより、焼成中の粒成長を抑制して
小粒径の焼結体が形成され、したがって単位厚さ当たり
の粒界層が多くなり、高いV1mA/tを持つ電圧非直線抵抗
体を得ることができる。しかもSb,Nb,TaまたはPの添加
は、焼結体の均一性を低下させることなく、高いV1mA/t
の領域において、前述の公報に開示されている電圧非直
線抵抗体と同等以上の許容エネルギー値を付与させるこ
とができる。
As described above, the present invention further includes Sb, N in addition to the voltage non-linear resistor component disclosed in Japanese Patent Publication No. 1-25205.
b, Ta, at least one of P is added and fired, or the voltage nonlinear resistor component disclosed in the above-mentioned JP-B-62-14924 is further added with at least one of Sb and Nb and fired. As a result, the grain growth during firing is suppressed and a sintered body having a small grain size is formed, so that the grain boundary layer per unit thickness is increased, and a voltage non-linear resistor having a high V 1 mA / t is obtained. be able to. In addition, the addition of Sb, Nb, Ta or P can provide a high V 1 mA / t without lowering the uniformity of the sintered body.
In the region described above, an allowable energy value equal to or higher than that of the voltage nonlinear resistor disclosed in the above-mentioned publication can be provided.

〔実施例〕〔Example〕

以下、本発明を実施例に基づき説明する。 Hereinafter, the present invention will be described based on examples.

本発明による電圧非直線抵抗体は、ZnOと添加成分の
金属または化合物の混合物を酸素含有雰囲気のもとで高
温焼成し、焼結させることによって製造される。添加成
分は金属酸化物の形で添加されるが、焼成過程で酸化物
になり得る化合物、例えば炭酸塩,水酸化物,弗化物お
よびその溶液なども用いることができ、あるいは単体元
素の形で用い、焼成過程で酸化物にすることもできる。
The voltage non-linear resistor according to the present invention is manufactured by firing and sintering a mixture of ZnO and a metal or a compound as an additional component at a high temperature in an oxygen-containing atmosphere. The additional component is added in the form of a metal oxide, but a compound that can be converted into an oxide in the firing step, for example, a carbonate, a hydroxide, a fluoride and a solution thereof, or the like, or a single element may be used. It can be used and converted into an oxide during the firing process.

本発明による電圧非直線抵抗体は、ZnO粉末に添加成
分金属または化合物の粉末を添加して十分に混合し、焼
成前に空気中で500〜1000℃で数時間仮焼した後、仮焼
物を十分に粉砕して所定の形状に成形し、次いで空気中
で1100〜1400℃程度の温度で数時間焼成することにより
製造される。1100℃より低い焼成温度では焼結が不十分
で特性が不安定である。また1400℃より高い温度では均
質な焼結体を得ることが困難となり、電圧非直線性が低
下し、特性の制御などの再現性に難点があり、実用に供
する製品を得難い。
The voltage non-linear resistor according to the present invention is obtained by adding a powder of an additional component metal or compound to ZnO powder, mixing them thoroughly, calcining at 500 to 1000 ° C. for several hours in air before firing, and then calcining the calcined product. It is manufactured by sufficiently pulverizing and shaping into a predetermined shape, and then firing in air at a temperature of about 1100 to 1400 ° C. for several hours. If the firing temperature is lower than 1100 ° C, the sintering is insufficient and the characteristics are unstable. At a temperature higher than 1400 ° C., it is difficult to obtain a homogeneous sintered body, voltage non-linearity is reduced, and there is a difficulty in reproducibility such as control of characteristics, and it is difficult to obtain a practical product.

次に本発明による電圧非直線抵抗体の具体的な例につ
いて述べる。
Next, a specific example of the voltage non-linear resistor according to the present invention will be described.

実施例1 ZnO粉末にPr6O11,Co3O4,MgO,K2CO3,Cr2O3,B2O3,Al2O3
粉末と、これにさらにSb2O3,Nb2O5,WO3,Ta2O5またはP2O
5粉末の少なくともいずれかを、後記の第1表〜第6表
に記載した所定の原子%に相当する量で添加し、十分に
混合した後、500〜1000℃で数時間仮焼した。次いで仮
焼物を十分に粉砕し、バインダーを加えて直径17mmの円
板状に加圧成形し、1100〜1400℃の空気中で1時間焼成
して焼結体を得た。このようにして得られた焼結体を厚
さ2mmの試料に研磨し、その両面に電極を焼き付けて素
子をつくり、素子の電気的特性を測定した。
Pr 6 O 11 in Example 1 ZnO powder, Co 3 O 4, MgO, K 2 CO 3, Cr 2 O 3, B 2 O 3, Al 2 O 3
Powder and additionally Sb 2 O 3 , Nb 2 O 5 , WO 3 , Ta 2 O 5 or P 2 O
At least one of the five powders was added in an amount corresponding to a predetermined atomic% described in Tables 1 to 6 described below, mixed well, and then calcined at 500 to 1000 ° C for several hours. Next, the calcined product was sufficiently pulverized, and a binder was added thereto to form a disc having a diameter of 17 mm under pressure, followed by firing for 1 hour in air at 1100 to 1400 ° C. to obtain a sintered body. The sintered body thus obtained was polished into a sample having a thickness of 2 mm, electrodes were baked on both surfaces thereof to produce an element, and the electrical characteristics of the element were measured.

電気的特性としては、素子に1mAの電流を流したとき
の電極間電圧V1mA,2ms幅の方形波電流を20回印加して貫
通破壊,沿面破壊のない電流値とそのときの制限電圧か
ら許容エネルギーを求めた。
The electrical characteristics are as follows: The electrode voltage V 1 mA when a current of 1 mA is applied to the element, a square wave current with a width of 2 ms is applied 20 times, and the current value without penetrating breakdown and creepage breakdown and the limiting voltage at that time The allowable energy was determined.

電圧非直線抵抗体の配合組成を種々変えたとき、それ
らに対応する電気的特性の測定結果を第1表〜第6表に
示す。第1表は基本組成にSbを添加した場合、同様に第
2表はNb,第3表はW(参考例),第4表はTa,第5表は
P,第6表はNbとWを添加した場合を表している。各表に
示した配合組成は、配合された原料中の各成分金属元素
の原子数の総和に対する添加元素の原子数の比から算出
した原子%で表してある。また各表にはV1mAの代わりに
単位厚さ当たりのV1mAであるV1mA/tを用い、許容エネル
ギーの代わりに許容エネルギー比で記してある。許容エ
ネルギー比は、前述の公報記載の電圧非直線抵抗体にお
けるV1mA/tがほぼ200V/mmであるときの許容エネルギー
値に対する比率である。
When the composition of the voltage non-linear resistor is variously changed, the measurement results of the electrical characteristics corresponding thereto are shown in Tables 1 to 6. Table 1 shows the case where Sb is added to the basic composition. Similarly, Table 2 shows Nb, Table 3 shows W (Reference Example), Table 4 shows Ta, and Table 5 shows
P, Table 6 shows the case where Nb and W were added. The composition shown in each table is represented by atomic% calculated from the ratio of the number of atoms of the additive element to the total number of atoms of each component metal element in the blended raw material. The use of a V 1mA / t is V 1mA per unit thickness in place of V 1mA in each table, it is marked with the allowable energy ratio instead of the allowable energy. The allowable energy ratio is a ratio to the allowable energy value when V 1 mA / t in the voltage non-linear resistor described in the above-mentioned publication is approximately 200 V / mm.

第1表〜第6表とも試料No.1とNo.2はZnOにPr,Co,Mg,
K,Cr,B,Alのみを添加して製造した従来の電圧非直線抵
抗体に相当し、比較のために併記したものであり、試料
No.1とNo.2はそれぞれ焼成条件が異なる。即ち試料No.2
はNo.1より低い温度で焼成し、V1mA/tは300V/mm以上が
得られたものである。しかし、その許容エネルギー比を
比較すると、V1mA/tを300V/mm以上に設定した場合は、
許容エネルギーは大幅に低下し、実用に供し得ないこと
がわかる。
In Tables 1 to 6, samples No. 1 and No. 2 contained Pr, Co, Mg, ZnO in ZnO.
It is equivalent to a conventional voltage nonlinear resistor manufactured by adding only K, Cr, B, and Al, and is also shown for comparison.
No. 1 and No. 2 have different firing conditions. That is, sample No. 2
Is fired at a temperature lower than No. 1, and V 1 mA / t is 300 V / mm or more. However, comparing the allowable energy ratios, when V 1 mA / t is set to 300 V / mm or more,
It can be seen that the allowable energy is greatly reduced and cannot be put to practical use.

本発明の目的であるV1mA/tを300V/mm以上としたと
き、V1mA/tが200V/mmの場合と同等以上の許容エネルギ
ーを有する電圧非直線抵抗体は、第1表,第2表,第4
表〜第6表から、各表に共通して試料No.4〜7,No.10〜1
3,No.16〜18,No.21〜23,No.26〜28,No.31〜34,No.37〜4
0,No.43〜45である。これらを総合すると、本発明の電
圧非直線抵抗体に適する各副成分の添加量はPrが0.08〜
5.0原子%,Coが0.1〜10.0原子%,Mgが0.01〜5.0原子%,
Kが0.01〜1.0原子%,Crが0.01〜1.0原子%,Bが5×10-4
〜1×10-1原子%,Alが1×10-4〜5×10-2原子%,そ
してSb,Nb,TaまたはPの少なくとも一つが総量で1×10
-3〜5×10-2原子%の範囲であることがわかる。
When V 1 mA / t, which is the object of the present invention, is set to 300 V / mm or more, the voltage non-linear resistor having an allowable energy equal to or more than that when V 1 mA / t is 200 V / mm is shown in Tables 1 and 2. Table, 4th
From Tables 6 to 6, samples No. 4 to 7 and No. 10 to 1 are common to each table.
3, No.16-18, No.21-23, No.26-28, No.31-34, No.37-4
0, No. 43 to No. 45. Taken together, the addition amount of each subcomponent suitable for the voltage nonlinear resistor of the present invention is such that Pr is 0.08 to
5.0 atomic%, Co is 0.1-10.0 atomic%, Mg is 0.01-5.0 atomic%,
K is 0.01 to 1.0 at%, Cr is 0.01 to 1.0 at%, B is 5 × 10 -4
11 × 10 -1 atomic%, Al is 1 × 10 -4 to 5 × 10 -2 atomic%, and at least one of Sb, Nb, Ta or P is 1 × 10 -1 atomic% in total.
It can be seen that the range is -3 to 5 × 10 -2 atomic%.

以上のように本発明の電圧非直線抵抗体は、ZnOに副
成分として適量のPr,Co,Mg,K,Cr,B,Alを含む組成系に、
さらにSb,Nb,Ta,Pのうちの少なくとも一種を適量添加す
ることにより、V1mA/tが300V/mm以上の高い領域におい
ても、優れたサージエネルギー吸収能力を持たせること
ができる。これはZnOにPr,Co,Mg,K,Cr,B,Al,Sb,Nb,Ta,P
のそれぞれ適量が共存して初めて達成されるものであ
り、これら副成分を単独で添加すると、電圧非直線性は
極めて悪く、ほぼオーミックな特性しか得られず、実用
に供することは不可能である。
As described above, the voltage nonlinear resistor of the present invention is a composition system containing ZnO containing an appropriate amount of Pr, Co, Mg, K, Cr, B, Al as a subcomponent,
Further, by adding at least one of Sb, Nb, Ta, and P in an appropriate amount, an excellent surge energy absorbing ability can be provided even in a region where V 1 mA / t is as high as 300 V / mm or more. This is because Pr, Co, Mg, K, Cr, B, Al, Sb, Nb, Ta, P
Are achieved only when an appropriate amount of each of them coexists, and when these subcomponents are added alone, the voltage non-linearity is extremely poor, almost only ohmic characteristics are obtained, and it is impossible to put to practical use .

なお、本実施例では副成分として添加する希土類元素
としてPrのみを例示したが、Pr以外の希土類元素を用い
てもよい。またMgはこの他にCa、またはMgとCaの同時添
加、Kはこの他にCsやRb、またはK,Cs,Rbの同時添加、A
lはこの他にGaやIn、またはAl,Ga,Inの同時添加として
もよい。このような組成系においても、本発明の主眼で
あるSb,Nb,TaまたはPの添加は、上述と同様の効果が別
途実験の結果認められている。
Note that, in the present embodiment, only Pr has been exemplified as the rare earth element to be added as an auxiliary component, but a rare earth element other than Pr may be used. Mg is also Ca or Mg and Ca added simultaneously, K is additionally Cs or Rb, or K, Cs, Rb is added simultaneously, A
l may be Ga or In or Al, Ga, In added simultaneously. Even in such a composition system, the same effect as described above was added to the addition of Sb, Nb, Ta, or P, which is the main feature of the present invention, as a result of another experiment.

実施例2 ZnO粉末にPr6O11,CO3O4,K2CO3,Cr2O3粉末と、これに
さらにSb2O3,Nb2O5,WO3粉末の少なくともいずれかを後
記の第7表〜第10表に記載した所定の原子%に相当する
量で添加し、十分に混合した後、500〜1000℃で数時間
仮焼した。次いで仮焼物を十分に粉砕し、バインダーを
加えて直径17mmの円板状に加圧成形し、1100〜1400℃の
空気中で1時間焼成して焼結体を得た。このようにして
得られた焼結体を厚さ2mmの試料に研磨し、その両面に
電極を焼き付けて素子をつくり、素子の電気的特性を測
定した。
Example 2 Pr 6 O 11 , CO 3 O 4 , K 2 CO 3 , Cr 2 O 3 powder and at least one of Sb 2 O 3 , Nb 2 O 5 and WO 3 powder are described later in the ZnO powder. Was added in an amount corresponding to the predetermined atomic% described in Tables 7 to 10 above, mixed well, and then calcined at 500 to 1000 ° C. for several hours. Next, the calcined product was sufficiently pulverized, and a binder was added thereto to form a disc having a diameter of 17 mm under pressure, followed by firing for 1 hour in air at 1100 to 1400 ° C. to obtain a sintered body. The sintered body thus obtained was polished into a sample having a thickness of 2 mm, electrodes were baked on both surfaces thereof to produce an element, and the electrical characteristics of the element were measured.

電気的特性としては、素子に1mAの電流を流したとき
の電極間電圧V1mA,2ms幅の方形波電流を20回印加して貫
通破壊,沿面破壊のない電流値とそのときの制限電圧か
ら許容エネルギーを求めた。
The electrical characteristics are as follows: The electrode voltage V 1 mA when a current of 1 mA is applied to the element, a square wave current with a width of 2 ms is applied 20 times, and the current value without penetrating breakdown and creepage breakdown and the limiting voltage at that time The allowable energy was determined.

電圧非直線抵抗体の配合組成を種々変えたとき、それ
らに対応する電気的特性の測定結果を第7表〜第10表に
示す。第7表はSbを添加した場合,同様に第8表はNb,
第9表はW(参考例),第10表はNbとWを添加した場合
を表している。各表に示した配合組成は、配合された原
料中の各成分金属元素の原子数の総和に対する添加元素
の原子数の比から算出した原子%で表してある。また各
表にはV1mAの代わりに単位厚さ当たりのV1mAであるV1mA
/tを用い、許容エネルギーの代わりに許容エネルギー比
で記してある。許容エネルギー比は、前述の公報記載の
電圧非直線抵抗体におけるV1mA/tがほぼ200V/mmである
ときの許容エネルギー値に対する比率である。
When the composition of the voltage non-linear resistor is variously changed, the measurement results of the electrical characteristics corresponding to those are shown in Tables 7 to 10. Table 7 shows that when Sb was added, and Table 8 also shows that Nb,
Table 9 shows W (reference example), and Table 10 shows the case where Nb and W were added. The composition shown in each table is represented by atomic% calculated from the ratio of the number of atoms of the additive element to the total number of atoms of each component metal element in the blended raw material. The V 1mA is V 1mA per unit thickness in place of V 1mA in the tables
Using / t, the allowable energy ratio is described instead of the allowable energy. The allowable energy ratio is a ratio to the allowable energy value when V 1 mA / t in the voltage non-linear resistor described in the above-mentioned publication is approximately 200 V / mm.

第7表〜第10表とも試料No.1とNo.2はZnOにPr,Co,K,C
rのみを添加して製造した従来の電圧非直線抵抗体に相
当し、比較のために併記したものであり、試料No.1とN
o.2はそれぞれ焼成条件が異なる。即ち試料No.2はNo.1
より低い温度で焼成し、V1mA/tは300V/mm以上が得られ
たものである。しかし、その許容エネルギー比を比較す
ると、V1mA/tを300V/mm以上に設定した場合は、許容エ
ネルギーは大幅に低下し、実用に供し得ないことがわか
る。
In Tables 7 to 10, samples No. 1 and No. 2 contained Pr, Co, K, and C in ZnO.
r corresponds to a conventional voltage non-linear resistor manufactured by adding only r, and is also shown for comparison.
o.2 has different firing conditions. That is, sample No.2 is No.1
When calcined at a lower temperature, V1mA / t is 300 V / mm or more. However, comparing the allowable energy ratios, it can be seen that when V 1 mA / t is set to 300 V / mm or more, the allowable energy is significantly reduced and cannot be put to practical use.

本発明の目的であるV1mA/tを300V/mm以上としたと
き、V1mA/tが200V/mmの場合と同等以上の許容エネルギ
ーを有する電圧非直線抵抗体は、第7表,第8表,第10
表から、各表に共通して試料No.4〜8,No.11〜13,No.16
〜18,No.21〜23,No.26〜28である。これらを総合する
と、本発明の電圧非直線抵抗体に適する各副成分の添加
量はPrが0.1〜5.0原子%,Coが0.5〜5.0原子%,Kが0.05
〜0.5原子%,Crが0.05〜0.5原子%,そしてSb,Nbの少な
くとも1つが総量で1×10-3〜5×10-2原子%の範囲で
あることがわかる。
When V 1 mA / t, which is the object of the present invention, is set to 300 V / mm or more, the voltage non-linear resistor having an allowable energy equal to or more than that when V 1 mA / t is 200 V / mm is shown in Tables 7 and 8. Table, Tenth
From the table, sample Nos. 4 to 8, No. 11 to 13, No. 16
No. 18, No. 21 to No. 23, No. 26 to No. 28. Taken together, the addition amounts of each subcomponent suitable for the voltage nonlinear resistor of the present invention are as follows: Pr is 0.1 to 5.0 atomic%, Co is 0.5 to 5.0 atomic%, and K is 0.05 to 0.05 atomic%.
It can be seen that 0.50.5 at%, Cr is 0.05 で 0.5 at%, and at least one of Sb and Nb is in the range of 1 × 10 −3 to 5 × 10 −2 at %.

以上のように本発明の電圧非直線抵抗体は、ZnOに副
成分として適量のPr,Co,K,Crを含む組成系に、さらにS
b,Nbの少なくとも一種を適量添加することにより、V1mA
/tが300V/mm以上の高い領域においても、優れたサージ
エネルギー吸収能力を持たせることができる。これはZn
OにPr,Co,K,Cr,Sb,Nbのそれぞれ適量が共存して初めて
達成されるものであり、これら副成分を単独で添加する
と、電圧非直線性は極めて悪く、ほぼオーミックな特性
しか得られず、実用に供することは不可能である。
As described above, the voltage non-linear resistor according to the present invention is obtained by adding a suitable amount of Pr, Co, K, Cr as a subcomponent to ZnO,
b, by adding at least one appropriate amount of Nb, V 1mA
Even in a high region where / t is 300 V / mm or more, it is possible to have excellent surge energy absorbing ability. This is Zn
O is achieved only when an appropriate amount of each of Pr, Co, K, Cr, Sb, and Nb coexists in O. When these subcomponents are added alone, the voltage nonlinearity is extremely poor, and only an almost ohmic characteristic is obtained. It cannot be obtained and cannot be put to practical use.

〔発明の効果〕〔The invention's effect〕

以上説明したように、ZnOを主成分とし、希土類元素
などその他の副成分と、さらにSb,Nb,Ta,Pのうちの少な
くとも一つを添加し焼成した本発明の電圧非直線抵抗体
はV1mA/tが300V/mm以上の高い領域においても、V1mA/t
が200V/mm程度のときと同等以上のサージエネルギー吸
収能力を得ることができる。このことは、この電圧非直
線抵抗体が適用される機器、例えば避雷器などを小型化
し、コストダウンを図る上で極めて効果的である。
As described above, the voltage non-linear resistor of the present invention containing ZnO as a main component, other subcomponents such as rare earth elements, and further adding at least one of Sb, Nb, Ta, and P and firing the same is V V 1mA / t even in the high region where 1mA / t is 300V / mm or more
Of about 200 V / mm can be obtained. This is extremely effective in reducing the size of equipment to which the voltage non-linear resistor is applied, for example, a lightning arrester and reducing the cost.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 津田 孝一 神奈川県川崎市川崎区田辺新田1番1号 富士電機株式会社内 (56)参考文献 特開 昭60−46005(JP,A) 特公 平1−25205(JP,B2) 特公 昭62−14924(JP,B2) ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koichi Tsuda 1-1-1, Tanabe-Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fuji Electric Co., Ltd. (56) References JP-A-60-46005 (JP, A) Hei 1-25205 (JP, B2) JP-B 62-14924 (JP, B2)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】酸化亜鉛を主成分とし、これに副成分とし
て少なくとも一種の希土類元素を総量で0.08〜5.0原子
%,コバルトを0.1〜10.0原子%,マグネシウム、カル
シウムのうち少なくとも一種を0.01〜5.0原子%,カリ
ウム、セシウム、ルビジウムのうち少なくとも一種を総
量で0.01〜1.0原子%,クロムを0.01〜1.0原子%,ホウ
素を5×10-4〜1×10-1原子%,アルミニウム、ガリウ
ム、インジウムのうち少なくとも一種を総量で1×10-4
〜5×10-2原子%およびアンチモン、ニオブ、タンタ
ル、燐のうち少なくとも一種を総量で1×10-3〜5×10
-2原子%の範囲で添加し焼成してなることを特徴とする
電圧非直接低抗体。
1. A zinc oxide as a main component, and at least one rare earth element as an auxiliary component in a total amount of 0.08 to 5.0 atomic%, cobalt of 0.1 to 10.0 atomic%, and at least one of magnesium and calcium of 0.01 to 5.0 atomic%. Atomic%, at least one of potassium, cesium, and rubidium in a total amount of 0.01 to 1.0 atomic%, chromium of 0.01 to 1.0 atomic%, boron of 5 × 10 -4 to 1 × 10 -1 atomic%, aluminum, gallium, and indium At least one of them is 1 × 10 -4 in total
-5 × 10 -2 atomic% and at least one of antimony, niobium, tantalum and phosphorus in a total amount of 1 × 10 -3 to 5 × 10
A non-direct voltage low antibody characterized by being added and calcined in the range of -2 atomic%.
【請求項2】酸化亜鉛を主成分とし、これに副成分とし
てプラセオジムを0.1〜5.0原子%,コバルトを0.5〜5.0
原子%,カリウムを0.05〜0.5原子%,クロムを0.05〜
0.5原子%,アンチモン、ニオブの少なくとも一種を総
量で1×10-3〜5×10-2原子%の範囲で添加し焼成して
なることを特徴とする電圧非直接低抗体。
2. Zinc oxide as a main component, and praseodymium of 0.1 to 5.0 at% and cobalt of 0.5 to 5.0 as a subcomponent.
Atomic%, potassium 0.05-0.5 atomic%, chromium 0.05-
A non-voltage direct low antibody characterized in that 0.5 at%, at least one of antimony and niobium is added in a total amount of 1 × 10 −3 to 5 × 10 −2 at % and calcined.
JP02149103A 1990-01-31 1990-06-07 Voltage non-linear resistor Expired - Fee Related JP3059193B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE4102756A DE4102756A1 (en) 1990-01-31 1991-01-30 VOLTAGE-DEPENDENT, NON-LINEAR RESISTOR
US07/648,132 US5140296A (en) 1990-01-31 1991-01-30 Voltage-dependent nonlinear resistor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2-21468 1990-01-31
JP2146890 1990-01-31
JP2-71212 1990-03-20
JP7121290 1990-03-20

Publications (2)

Publication Number Publication Date
JPH03278404A JPH03278404A (en) 1991-12-10
JP3059193B2 true JP3059193B2 (en) 2000-07-04

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Country Link
JP (1) JP3059193B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3449599B2 (en) 1999-03-26 2003-09-22 Tdk株式会社 Multilayer chip varistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046005A (en) * 1983-08-24 1985-03-12 株式会社富士電機総合研究所 Voltage nonlinear resistor
JPS6425205A (en) * 1987-07-21 1989-01-27 Nippon Kokan Kk Programmable controller

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