JP3055714U - Semiconductor device manufacturing equipment - Google Patents

Abstract

[PROBLEMS] To shorten the time required for performing a hydrophobic treatment on a predetermined surface of a semiconductor substrate, and to achieve good adhesion of a resist material without being affected by the surface shape due to the hydrophobic treatment. Provided is an apparatus for manufacturing a semiconductor element capable of obtaining a property. SOLUTION: A foaming container 1 into which a hydrophobic liquid 11 such as HMDS is injected, and one end having a porous cap 6 attached to the tip or the like are immersed in the hydrophobic liquid 11 and pulled out from the foaming container 1. At the other end, an air supply pipe 3 connected to a gas supply mechanism 2 for supplying an air supply gas 12 such as nitrogen gas, and a processing container 4 containing a semiconductor substrate 10.
By using a semiconductor device manufacturing apparatus provided with a ventilation pipe 5 connected between the air supply pipe 1 and the upper part of the foaming container 1, the air supply gas 12 is pressure-fed from the air supply pipe 3 into the hydrophobic liquid 11, and foaming is performed. The gas containing the hydrophobic liquid 11 floats from the upper space of the processing container 1 to the surface of the semiconductor substrate 10 in the processing container 4 and adheres thereto.

Description

[Detailed description of the invention]

[0001]

[Technical field to which the invention belongs]

 The present invention relates to an apparatus for manufacturing a semiconductor element used when a surface of a semiconductor substrate or a surface of various thin films formed on the surface of the semiconductor substrate is subjected to hydrophobic treatment.

[0002]

[Prior art]

 In a semiconductor device manufacturing process, when a desired pattern (pattern) is formed, a surface obtained by injecting impurities into the surface of the semiconductor substrate itself or the surface thereof, or an insulating film such as an oxide film or a nitride film is generally used. After applying a photosensitive resist material to the surface on which various thin films such as films and metal films are formed, light is irradiated and unnecessary portions are removed by optical and chemical methods, that is, a photoetching process.

In order to form a high-precision pattern, it is necessary to ensure good adhesion on the surface on which the resist material is applied. A hydrophobic treatment step is provided as a previous step. In the conventional hydrophobic treatment process, a method in which a hydrophobic liquid is used to drop directly onto the surface to which the resist material is applied, or a method in which the treatment is performed by vapor pressure in a closed container containing a semiconductor substrate, is widely applied. Have been.

[0004]

[Problems to be solved by the invention]

 In the above-mentioned hydrophobic treatment, according to the method in which the hydrophobic liquid is directly dropped onto a predetermined surface of the semiconductor substrate, if the surface shape has irregularities, the difference between the concave and convex portions is the difference in the state of the hydrophobic liquid that has been introduced. According to the method in which the hydrophobic processing is uneven at the step portion and the adhesiveness of the resist material may be impaired, and the processing is performed by vapor pressure in a closed container containing the semiconductor substrate, The vaporization of the hydrophobic liquid can be uniformly adhered to the specified surface, so that the unevenness of the hydrophobic treatment due to the surface shape can be avoided. In order to improve the working efficiency by obtaining a high vapor pressure in a short time by means such as heating, there are problems such as being restricted by the physical properties such as the boiling point and ignitability of the hydrophobic liquid. There It was.

The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to reduce the time required for performing a hydrophobic treatment on a predetermined surface of a semiconductor substrate. It is an object of the present invention to provide an apparatus for manufacturing a semiconductor element which can obtain good adhesion of a resist material without being affected by a surface shape by a hydrophobic treatment.

[0006]

[Means for Solving the Problems]

 According to the present invention, the above object is achieved by injecting a hydrophobic liquid into a semiconductor device manufacturing apparatus for performing a hydrophobic treatment on a surface of a semiconductor substrate or a surface of various thin films formed on the surface with the hydrophobic liquid. A closed air-foaming container and one end of which is immersed in the liquid and drawn out of the foaming container, and the other end is connected to a gas supply mechanism for supplying an air-supplying gas. This is achieved by providing a piping and a ventilation pipe connecting between another sealed processing container containing the semiconductor substrate and the upper part of the foaming container.

It is effective to attach a porous cap to the tip of the air supply pipe immersed in the hydrophobic liquid, and it is preferable to use nitrogen gas as the gas for air supply. Further, it is preferable to use HMDS as the hydrophobic liquid.

[0008]

[Action]

 According to the above-described semiconductor device manufacturing apparatus, when a gas having stable physical properties is supplied by pressure from a gas supply mechanism into a hydrophobic liquid injected into a foaming container via an air supply pipe. Since the hydrophobic liquid is aerated by the gas for air supply, the upper space of the foaming container is filled with a gas containing the liquid, and this gas is passed from the inside of the foaming container to the inside of the processing container through the ventilation pipe. To the surface of the semiconductor substrate contained in the processing container, and the water-phobic liquid is uniformly applied to the surface of the semiconductor substrate without being affected by the surface shape of the semiconductor substrate. Can be patrolled.

In addition, by providing a porous cap at the end of one end of the gas supply pipe immersed in the hydrophobic liquid, the diameter per gas bubble of the gas for gas supply can be reduced to 1 when the cap is not used. In the case where the gas flow rate is reduced to / n, the bubble total surface area becomes n times as large at the same gas supply flow rate as without the cap, so that the contact effect between the gas for air supply and the hydrophobic liquid can be improved, The time required for the hydrophobic treatment can be reduced.

[0010] When nitrogen gas is used as the gas for gas supply, stability of physical properties, safety of use environment, availability, economy and the like are constantly maintained. Furthermore, when HMDS is used as a hydrophobic liquid, it has a relatively high boiling point, a relatively low specific gravity, and has excellent characteristics of converting a non-volatile substance into a volatile substance as a silylating agent. An effect is obtained in workability.

[0011]

[Embodiment of the invention]

 FIG. 1 is a front sectional view of a semiconductor device manufacturing apparatus according to a first embodiment of the present invention, in which a closed foaming container 1 into which a hydrophobic liquid 11 is injected, and a hydrophobic liquid 1 at one end. An air supply pipe 3 connected to a gas supply mechanism 2 for supplying an air supply gas 12 and a semiconductor substrate 10 are housed at the other end immersed in the container 1 and drawn out of the foaming container 1. Further, a ventilation pipe 5 is provided to connect between another closed processing container 4 and the upper part of the foaming container 1.

In FIG. 1, when the gas 12 for air supply is pressure-fed via the gas supply pipe 3 into the hydrophobic liquid 11 injected from the gas supply mechanism 2 into the container 1 for foaming, The upper space 1 is filled with a gas containing the hydrophobic liquid 11 aerated with the gas 12 for air supply, and this gas floats and moves from the container 1 for foaming to the container 4 for treatment via the ventilation pipe 5. As a result, the hydrophobic liquid 11 uniformly reaches the surface of the semiconductor substrate 10 stored in the processing container 4.

FIG. 2 is a front cross-sectional view of a foaming container section showing a second embodiment of the present invention, and supplies the gas 12 for air supply in the first embodiment of the present invention shown in FIG. A porous cap 6 is attached to the end of one end of the air supply pipe 3 which is immersed in the hydrophobic liquid 11 for the air supply. In FIG. 2, since the diameter of the bubbles of the gas for air supply 12 discharged through the cap 6 can be reduced, the contact effect between the gas for gas supply 12 and the hydrophobic liquid 11 is improved, and the hydrophobic treatment is performed. The time required for the operation can be shortened.

In the apparatus for manufacturing a semiconductor device according to the embodiment shown in FIGS. 1 and 2, nitrogen gas is used as an air supply gas, and HMDS is used as a hydrophobic liquid.

[0015]

[Effect of the invention]

 As described above, according to the present invention, in a semiconductor device manufacturing apparatus for hydrophobically treating the surface of a semiconductor substrate or various thin films formed on the surface with a hydrophobic liquid, the hydrophobic liquid is used. And a gas supply mechanism connected to the other end of which is immersed in the liquid and drawn out of the foaming container at one end. In addition to providing a gas pipe, and a gas pipe connected between the upper part of the foaming container and another closed type processing container containing the semiconductor substrate, the gas for gas supply is provided in the gas feeding pipe. When the air is pumped through the container, the gas containing the hydrophobic liquid filled in the upper space of the foaming container floats and moves from the foaming container to the processing container via the ventilation pipe, and is transferred to the processing container. On a predetermined surface of the semiconductor substrate Because the aqueous liquid is uniformly cruiser reached, it is possible to obtain good adhesion of the resist material in a short time as compared with the conventional without being influenced by the surface shape of the semiconductor substrate.

Further, by providing a porous cap at the end of one end of the air supply pipe which is immersed in the hydrophobic liquid, the air supply pipe is brought into contact with the hydrophobic liquid at the same gas supply flow rate as when the cap is not provided. Since the total bubble surface area of the care gas can be increased, the time required for the hydrophobic treatment can be reduced. In addition, by using nitrogen gas as the gas for gas supply, stability of physical properties, safety of use environment, availability, economy and the like are constantly maintained.

Further, by using HMDS as the hydrophobic liquid, effects can be obtained in terms of handling and workability.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a semiconductor device manufacturing apparatus showing a first embodiment of the present invention.

FIG. 2 is a front sectional view of a foaming container portion showing a second embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Foaming container 2 ... Gas supply mechanism 3 ... Air supply piping 4 ... Processing container 5 ... Ventilation piping 6 ... Cap 10 Semiconductor substrate 11 Hydrophobic liquid 12 Gas for air supply

Claims (4)

[Utility model registration claims] An apparatus for manufacturing a semiconductor device for hydrophobically treating a surface of a semiconductor substrate or a surface of various thin films formed on the surface of the semiconductor substrate with a hydrophobic liquid. A container and an air supply pipe connected to a gas supply mechanism for supplying an air supply gas to the other end drawn out of the foaming container by immersing one end in the liquid, and a semiconductor. An apparatus for manufacturing a semiconductor device, comprising: a ventilation pipe connected between another sealed processing container in which a substrate is stored and an upper portion of a foaming container. 2. The semiconductor device manufacturing apparatus according to claim 1, wherein a porous cap is attached to a tip of the air supply pipe immersed in the hydrophobic liquid. 3. The apparatus for manufacturing a semiconductor device according to claim 1, wherein nitrogen gas is used as the gas for gas supply. 4. The hydrophobic liquid is HMDS (hexamethyldisi).
4. The apparatus for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is manufactured using lazane.