JP3048572B2 - Magneto-resistance effect element and thin-film magnetic head using the magneto-resistance effect element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a magnetoresistive effect element and a thin film magnetic head using an exchange anisotropic magnetic field generated at an interface between the antiferromagnetic layer and the ferromagnetic layer. When the magnetic layer is formed of an antiferromagnetic material containing elements X (Pt, Pd, etc.) and Mn, a magnetoresistive effect element (spin-valve thin film element) capable of obtaining a larger exchange anisotropic magnetic field , AMR element) and a thin-film magnetic head using the magnetoresistive element.

[0002]

2. Description of the Related Art A spin valve type thin film element is a kind of a giant magnetoresistive (GMR) element utilizing a giant magnetoresistive effect, and detects a recording magnetic field from a recording medium such as a hard disk. This spin-valve thin film element has several advantages, such as a relatively simple structure among GMR elements and a change in resistance with a weak magnetic field.

The spin-valve type thin film element has the simplest structure and comprises an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer and a free magnetic layer. The antiferromagnetic layer and the pinned magnetic layer are formed in contact with each other, and the magnetization direction of the pinned magnetic layer is fixed in a fixed direction by an exchange anisotropic magnetic field generated at an interface between the antiferromagnetic layer and the pinned magnetic layer. Single domain and fixed.

The magnetization of the free magnetic layer is aligned in a direction crossing the magnetization direction of the fixed magnetic layer by bias layers formed on both sides of the free magnetic layer.

[0005] The antiferromagnetic layer has an Fe-Mn (iron-manganese) alloy film or a Ni-Mn (nickel-manganese) alloy film, and the fixed magnetic layer and the free magnetic layer have Ni-F.
e (nickel-iron) alloy film, non-magnetic conductive layer Cu
(Copper) film and Co-Pt (cobalt-
A (platinum) alloy film or the like is generally used.

In this spin-valve thin-film element, when the magnetization direction of the free magnetic layer changes due to a leakage magnetic field from a recording medium such as a hard disk, the electrical resistance changes in relation to the fixed magnetization direction of the fixed magnetic layer. The leakage magnetic field from the recording medium is detected by the voltage change based on the change in the electric resistance value.

[0007] As described above, an Fe-Mn alloy film or a Ni-Mn alloy film is used for the antiferromagnetic layer. The Fe-Mn alloy film has low corrosion resistance and an exchange anisotropic magnetic field. And the blocking temperature is as low as about 150 ° C. With a low blocking temperature,
A problem arises that the exchange anisotropic magnetic field disappears due to an increase in the element temperature during the head manufacturing process or during the operation of the head.

On the other hand, the Ni—Mn alloy film is made of Fe—
Compared with the Mn alloy film, the exchange anisotropic magnetic field is relatively large,
Moreover, the blocking temperature is as high as about 300 ° C. Therefore, it is more preferable to use a Ni—Mn alloy film than an Fe—Mn alloy film for the antiferromagnetic layer.

Further, B.I. Y. Wong, C.I. Mitsu
mata, S.M. Prakash, D .; E. FIG. Laughl
in, and T.S. Kobayashi: Journa
lof Applied Physics, vol.
79, No. 10, p. 7896-p. 7904 (199
6) reports on the interface structure between the antiferromagnetic layer and the pinned magnetic layer (NiFe alloy film) when a Ni—Mn alloy film is used as the antiferromagnetic layer.

[0010] This paper states that "NiFe and NiMn should be made so that the {111} planes are parallel to the film surface.
/ NiMn while maintaining the crystal matching state at the interface. Matching strain at the interface is mitigated by introducing a large number of twins having a plane parallel to the film plane as a twin plane. However, due to the remaining interface strain, Ni near the interface
The ordering of Mn is suppressed to a low level, and the degree of ordering is high at locations away from the interface. It is described.

The term “matching” refers to a state in which the atoms of the antiferromagnetic layer and the pinned magnetic layer at the interface correspond to each other on a one-to-one basis. This refers to a state in which atoms with the fixed magnetic layer are not in a paired positional relationship.

When an antiferromagnetic layer is formed of a NiMn alloy, heat treatment causes an exchange anisotropic magnetic field to be generated at the interface between the NiMn alloy and the pinned magnetic layer. This causes the transformation of the NiMn alloy from the disordered lattice to the ordered lattice.

Before the heat treatment, the crystal structure of the NiMn alloy is a face-centered cubic lattice (hereinafter referred to as an irregular lattice) in which the arrangement order of Ni and Mn atoms is irregular. Then, the crystal structure is transformed from a face-centered cubic lattice to a face-centered square lattice, and the atomic positions are ordered (hereinafter, referred to as a ordered lattice). Note that the ratio c / a of the lattice constants a and c of the Ni—Mn alloy film when the crystal structure completely becomes a regular lattice is 0.942.

[0014] As described above, Ni having a completely regular lattice is obtained.
Since the lattice constant ratio c / a of the Mn alloy film is relatively close to 1, the lattice distortion generated at the interface when transforming from an irregular lattice to a regular lattice is relatively small. Even if the interface structure between the film and the pinned magnetic layer is in a matched state, the heat treatment causes the NiMn alloy to transform from an irregular lattice to a regular lattice, and generate an exchange anisotropic magnetic field. As described in the above-mentioned paper, the lattice strain at the interface is somewhat relaxed by twinning.

[0015]

SUMMARY OF THE INVENTION As described above, Ni
The Mn alloy has a relatively large exchange anisotropic magnetic field and a high blocking temperature of about 300 ° C.
Although it has excellent characteristics as compared with the eMn alloy, it cannot be said that the corrosion resistance is sufficient as in the case of the FeMn alloy.

Therefore, recently, it is excellent in corrosion resistance and N
An X-Mn alloy (X = Pt, Pd, Ir, R) using a platinum group element as an antiferromagnetic material that generates an exchange anisotropic magnetic field larger than an iMn alloy and has a high blocking temperature
h, Ru, Os) are drawing attention.

If an X-Mn alloy containing a platinum group element is used as the antiferromagnetic layer, the reproduction output can be improved as compared with the conventional case, and the exchange anisotropic property can be increased due to an increase in the element temperature during the head driving operation. The disadvantage that the directional magnetic field disappears and the reproduction characteristics are reduced is less likely to occur.

By the way, the X-containing platinum group element
When a Mn alloy is used as an antiferromagnetic layer, heat treatment after film formation must be performed in order to generate an exchange anisotropic magnetic field, as in the case where a NiMn alloy is used as an antiferromagnetic layer.

In the case of the NiMn alloy, according to the above-mentioned literature, it is described that the interface structure with the fixed magnetic layer (NiFe alloy) is in a matching state, but the X-Mn alloy (X
Similarly, when the interface structure between the pinned magnetic layer and the pinned magnetic layer is kept in a matched state, almost no exchange anisotropic magnetic field is generated even when heat treatment is performed.

The present invention has been made to solve the above-mentioned conventional problems. When an antiferromagnetic material containing an element X (X is a platinum group element) and Mn is used as an antiferromagnetic layer, the present invention has a large problem. It is an object of the present invention to provide a magnetoresistive element using an exchange coupling film capable of generating an exchange anisotropic magnetic field, and a thin-film magnetic head using the magnetoresistive element.

[0021]

[0022]

In the magnetoresistive element according to the present invention and the thin-film magnetic head using the magnetoresistive element, the interface between the antiferromagnetic layer and the ferromagnetic layer in contact with the antiferromagnetic layer is not changed. The feature is that it is in the matching state.

That is, the magnetoresistance effect element of the present invention
An antiferromagnetic layer, the antiferromagnetic layer and the contact is formed, the fixed magnetic layer whose magnetization direction by exchange anisotropic magnetic field of the antiferromagnetic layer is fixed, Hi磁layer on the pinned magnetic layer and a free magnetic layer formed through, and a bias layer for aligning the magnetization direction of the free magnetic layer in a direction crossing the magnetization direction of the pinned magnetic layer, said antiferromagnetic layer is at least an element X ( Where X is Pt, Pd, Ir, Rh, Ru, O
s) and an antiferromagnetic material containing Mn, and the interface structure between the antiferromagnetic layer and the fixed magnetic layer is brought into a non-matching state. There is a feature.

A fixed magnetic layer having a fixed magnetization direction; and a free magnetic layer formed on the fixed magnetic layer with a non-magnetic layer interposed therebetween. A track width is provided above or below the free magnetic layer. Antiferromagnetic layers are stacked at intervals in the direction, and the magnetization direction of the free magnetic layer crosses the magnetization direction of the fixed magnetic layer due to the exchange anisotropic magnetic field at the interface between the antiferromagnetic layer and the free magnetic layer. And the antiferromagnetic layer includes at least an element X (where X is Pt, Pd,
At least one of Ir, Rh, Ru, and Os) and Mn, and an interface structure between the antiferromagnetic layer and the free magnetic layer. Are in a non-matching state.

[0025] Alternatively, the non-magnetic layer stacked above and below the free magnetic layer, nonmagnetic above and other one of the non-magnetic layer
A fixed magnetic layer underlying sexual layer, located under the one of the top of the fixed magnetic layer and the other fixed magnetic layer, the exchange anisotropic magnetic field of the magnetization directions of the fixed magnetic layer constant An antiferromagnetic layer that fixes the magnetization direction of the free magnetic layer, and a bias layer that aligns the magnetization direction of the free magnetic layer in a direction that intersects the magnetization direction of the fixed magnetic layer. At least one of the antiferromagnetic layers has at least one element. X (where X is Pt, Pd,
Ir, Rh, Ru, or Os) is formed of an antiferromagnetic material containing Mn and an interface structure between the antiferromagnetic layer and the pinned magnetic layer. , In a non-matching state.

Alternatively, the magneto-resistive layer has a magneto-resistive layer and a soft magnetic layer which are stacked with a non-magnetic layer interposed therebetween, and an anti- ferromagnetic layer is superposed on the magneto-resistive layer. And the antiferromagnetic layer is composed of at least an element X (where X is one or more of Pt, Pd, Ir, Rh, Ru, and Os) and Mn. And an interface structure between the antiferromagnetic layer and the magnetoresistive layer is in a non-matching state.

[0027]

[0028]

[0029]

[0030]

[0031]

[0032]

[0033]

[0034]

[0035]

[0036]

[0037]

[0038]

[0039]

[0040]

[0041]

[0042]

[0043] In this case, for example, at least part of the crystal structure of the antiferromagnetic layer after heat treatment, the L1 ₀ type face-centered tetragonal ordered lattice.

At the interface between the antiferromagnetic layer and the ferromagnetic layer serving as the pinned magnetic layer, the free magnetic layer, or the magnetoresistive layer, the crystal orientations of the antiferromagnetic layer and the ferromagnetic layer are different. Is preferred.

For example, the {111} plane of the ferromagnetic layer is
While the preferred orientation is in the direction parallel to the interface with the antiferromagnetic layer, the orientation of the {111} plane of the antiferromagnetic layer is smaller than the orientation of the ferromagnetic layer or non-oriented. It has become.

Alternatively, while the {111} plane of the antiferromagnetic layer is preferentially oriented in a direction parallel to the interface with the ferromagnetic layer, the degree of orientation of the {111} plane of the ferromagnetic layer is: It is smaller than the degree of orientation of the antiferromagnetic layer or is non-oriented.

Alternatively, the orientation of the {111} plane of the antiferromagnetic layer and the orientation of the {111} plane of the ferromagnetic layer in a direction parallel to the interface between the antiferromagnetic layer and the ferromagnetic layer. Both the degrees are small or non-oriented, and the crystal planes other than the {111} plane are preferentially oriented in a direction parallel to the interface, and the crystal orientations of the antiferromagnetic layer and the ferromagnetic layer are changed. different.

Next, it is preferable that the element X in the X-Mn alloy to be the antiferromagnetic layer is Pt. In this case, for example, the ratio c / a of the lattice constants a and c of the antiferromagnetic layer after the heat treatment is more preferably in the range of 0.93 to 0.99.

In the above, the antiferromagnetic layer is made of XM
n-X 'alloy (where X is Pt, Pd, Ir, Rh,
Ru, Ri <br/> Oh in any one or more elements of Os, said element X 'is, Ne, Ar, Kr, Xe , B
e, B, C, N, Mg, Al, Si, P, Ti, V, C
r, Fe, Co, Ni, Cu, Zn, Ga, Ge, Z
r, Nb, Mo, Ag, Cd, Ir, Sn, Hf, T
a, W, Re, Au, Pb, and one of rare earth elements
Or two or more elements ), wherein X-M
The n-X 'alloy is an interstitial solid solution in which the element X' penetrates into the space of the spatial lattice composed of the elements X and Mn, or the lattice point of the crystal lattice composed of the elements X and Mn. It is possible that a part of the solid solution is partially substituted with the element X '. Further, X-Mn- serving as the antiferromagnetic layer
The element X of the X 'alloy is preferably Pt.

[0050] In addition, before Symbol element X 'is, Ne, Ar, K
may be one or more of r and Xe
Preferred .

Here, the composition ratio of the element X 'is at%
Is preferably in the range of 0.2 to 10. Further, the composition ratio of the element X 'is at%, preferably in the range of 0.5 to 5.

Further, the composition ratio X of the element X and Mn, X:
Mn is preferably in the range of 4: 6 to 6: 4.

X-Mn used as the antiferromagnetic layer
The -X 'alloy can be formed by a sputtering method.

A thin-film magnetic head according to the present invention is characterized in that a shield layer is formed above and below any of the above-described magnetoresistive elements via a gap layer.

In the present invention, as the antiferromagnetic layer, an antiferromagnetic layer containing at least the element X (X = one or more elements among Pt, Pd, Ir, Rh, Ru, and Os) and Mn is used. When a magnetic material is used, the interface structure with the ferromagnetic layer is set in a non-matching state so that an exchange anisotropic magnetic field can be appropriately obtained.

The reason that the interface structure between the ferromagnetic layer and the ferromagnetic layer is brought into a non-matching state is that when heat treatment is performed, the crystal structure of the antiferromagnetic layer is appropriately transformed from an irregular lattice to a regular lattice, and a larger exchange disorder is formed. This is for generating an isotropic magnetic field. less than,
The relationship between the mismatched state and the exchange anisotropic magnetic field will be described in detail.

First, the non-matching state means that the atoms on the antiferromagnetic layer side and the atoms on the ferromagnetic layer side have a one-to-one correspondence at the interface between the antiferromagnetic layer and the ferromagnetic layer. In other words, the positional relationship of the atoms is different, but in order to make the interface structure inconsistent, it is necessary to appropriately control the lattice constant of the antiferromagnetic layer before the heat treatment.

In the present invention, the antiferromagnetic layer is made of, for example, X
-Mn alloy (where X is Pt, Pd, Ir, Rh, R
any one or more of u and Os)
Is formed.

In the present invention, the composition ratio of X in the X-Mn alloy is appropriately selected to determine the value of the lattice constant of the X-Mn alloy before the heat treatment and the lattice constant of the ferromagnetic layer (eg, NiFe alloy). The difference from the value is set to be large.

The crystal structure of the X—Mn alloy and the crystal structure of the ferromagnetic layer in the film formation stage (before heat treatment) are both X, Mn.
Although the arrangement order of the atoms is a face-centered cubic lattice (hereinafter, referred to as an irregular lattice), the lattice constant of the X-Mn alloy and the lattice constant of the ferromagnetic layer are different in the present invention, as described above. Because the difference is large, X in the film formation stage (before heat treatment)
-The interface structure between the Mn alloy and the ferromagnetic layer tends to be in a mismatched state.

As described above, according to the present invention, when an X—Mn alloy (X is Pt, Pd, etc.) is used as the antiferromagnetic layer, the composition ratio of the element X is appropriately selected, so that the antiferromagnetic layer can be used. , The interface state with the ferromagnetic layer is in a mismatched state,
Furthermore, in the present invention, the lattice constant of the antiferromagnetic layer can be increased by including an element X 'such as a rare gas element (Ne, Ar, or the like) in the X-Mn alloy. It is possible to make the interface structure with the non-matching state.

In the present invention, it is preferable that the crystal orientation of the X-Mn alloy or the X-Mn-X 'alloy is different from that of the ferromagnetic layer. The degree of crystal orientation can be changed by the presence or absence of the underlayer, the composition ratio, various conditions such as the power gas pressure at the time of sputter film formation, or the stacking order of the films.

As described above, the X-Mn alloy or the X-Mn
The crystal orientations of the Mn-X 'alloy and the ferromagnetic layer are made different from each other because, for example, the {111} plane of the ferromagnetic layer is preferentially oriented parallel to the film surface, and similarly, the X-Mn alloy, Alternatively, if the {111} plane of the X—Mn—X ′ alloy is preferentially oriented parallel to the film surface, the interface structure is less likely to be in a non-matching state.

In the present invention, for example, the ferromagnetic layer of {1}
When the 11 ° plane is preferentially oriented in a direction parallel to the interface with the X-Mn alloy or the X-Mn-X 'alloy,
The degree of orientation of the {111} plane of the Mn alloy or the X-Mn-X 'alloy is smaller than the degree of orientation of the ferromagnetic layer, or is appropriately controlled so as to be non-oriented, thereby changing the interface structure. It is possible to maintain a non-matching state.

As described above, after the X-Mn alloy or the X-Mn-X 'alloy and the ferromagnetic layer are laminated so that the interface structure becomes inconsistent, heat treatment is performed.
An exchange anisotropic magnetic field is generated at the interface between the X-Mn alloy or the X-Mn-X 'alloy and the ferromagnetic layer. The generation of the exchange anisotropic magnetic field is caused by the X-Mn alloy or the X-Mn alloy. Mn-
This is because the crystal structure of the X ′ alloy is transformed from the disordered phase into a face-centered square lattice in which the arrangement order of X and Mn atoms is determined with regularity.

In the present invention, the face-centered square lattice is
Of the six faces of the unit cell, X atoms occupy the center of the four side faces, and Mn is located at the corners of the unit cell and at the centers of the upper and lower faces.
Atoms occupy a so-called L1 ₀ type of face-centered tetragonal lattice (hereinafter convention grating) is, X-M after the thermal
It is necessary that at least a part of the crystal structure of the n alloy or the X-Mn-X 'alloy has the ordered lattice.

As described above, by performing the heat treatment, X
The crystal structure of a -Mn alloy or an X-Mn-X 'alloy is transformed from an irregular lattice to a regular lattice, and an exchange coupling magnetic field is generated. The lattice distortion caused by this transformation is XM
The n alloy or the X-Mn-X 'alloy is larger than the NiMn alloy.

In the present invention, as described above, the composition ratio of the X—Mn alloy is optimized,
By adding element X 'as a third element to the alloy,
X-Mn alloy before heat treatment or X-Mn-
The interface structure between the X 'alloy and the ferromagnetic layer can be brought into a mismatched state.

When the interface structure between the antiferromagnetic layer and the ferromagnetic layer is brought into an inconsistent state, the crystal structure of the X—Mn alloy or the X—Mn—X ′ alloy is changed from an irregular lattice to an ordered one by heat treatment. Transformation into a lattice is likely, and a large exchange anisotropic magnetic field is generated at the interface.

An X-Mn alloy (X = Pt, Pd
Etc.) or X-Mn-X 'alloy (X' = Ne, Ar
Are superior in anti-ferromagnetic material, such as higher corrosion resistance than FeMn alloy, NiMn alloy, etc., higher blocking temperature and higher exchange anisotropic magnetic field (Hex) than FeMn alloy, etc. have.

In the present invention, it is preferable to select Pt as the element X constituting the X-Mn alloy or the X-Mn-X 'alloy.

[0072]

FIG. 1 is a cross-sectional view of the structure of a single spin-valve thin film element according to a first embodiment of the present invention, as viewed from the ABS side. In FIG. 1, only the central portion of the element extending in the X direction is shown broken.

This single spin valve type thin film element
It is provided at the trailing side end of a floating slider provided in a hard disk device and detects a recording magnetic field of a hard disk or the like. The moving direction of the magnetic recording medium such as a hard disk is the Z direction, and the direction of the leakage magnetic field from the magnetic recording medium is the Y direction.

The bottom of FIG. 1 is formed of Ta.
The underlayer 6 is made of a nonmagnetic material such as (tantalum). On the underlayer 6, a free magnetic layer 1, a nonmagnetic conductive layer 2, a fixed magnetic layer 3, and an antiferromagnetic layer 4 are laminated. Then, a protective layer 7 such as Ta (tantalum) is formed on the antiferromagnetic layer 4.

As shown in FIG. 1, hard bias layers 5 and 5 are formed on both sides of the six layers from the underlayer 6 to the protective layer 7, and a conductive layer is formed on the hard bias layers 5 and 5. 8, 8 are stacked.

In the present invention, the free magnetic layer 1 and the pinned magnetic layer 3 are made of a NiFe alloy, a CoFe alloy, a Co alloy,
It is formed of Co, CoNiFe alloy or the like.

Although the free magnetic layer 1 is formed as a single layer as shown in FIG. 1, it may be formed in a multilayer structure. That is, the free magnetic layer 1 is made of, for example, NiFe.
It may have a structure in which an alloy and a CoFe alloy are laminated, or may have a structure in which a NiFe alloy and Co are laminated.

The nonmagnetic conductive layer 2 interposed between the free magnetic layer 1 and the pinned magnetic layer 3 is formed of Cu.
Further, the hard bias layers 5 and 5 are made of, for example, Co-Pt.
(Cobalt-Platinum) alloy, Co-Cr-Pt (Cobalt-Chromium-Platinum) alloy, etc., and the conductive layers 8, 8 are made of Cu (copper), W (tungsten), Cr (chromium), or the like. Is formed.

In the present invention, the antiferromagnetic layer 4 formed on the pinned magnetic layer 3 has at least the element X (however, X
Is one or more of Pt, Pd, Ir, Rh, Ru, and Os) and Mn.

In the present invention, the interface structure between the pinned magnetic layer 3 and the antiferromagnetic layer 4 shown in FIG.
The crystalline structure of at least part of the at the interface antiferromagnetic layer 4 has a L1 ₀ type of face-centered tetragonal lattice (hereinafter referred to as ordered lattice).

[0081] Here, the L1 ₀ type face-centered tetragonal lattice, of the six sides of the unit cell, around the X atoms four faces of sides (X =
Pt, Pd, Ir, Rh, Ru, Os) and Mn atoms occupy the corners of the unit cell and the centers of the upper and lower surfaces.

In the present invention, the difference in crystal orientation between the fixed magnetic layer 3 and the antiferromagnetic layer 4 is that the fixed magnetic layer 3
The structure of the interface between the antiferromagnetic layer 4 and the antiferromagnetic layer 4 is preferable because it is likely to be in a mismatched state.

In the single-valve thin-film element shown in FIG. 1, since the Ta underlayer 6 is laid, the free magnetic layer 1, the nonmagnetic conductive layer 2, and the fixed magnetic layer formed on the underlayer 6 are formed. No. 3 {111} plane is preferentially oriented in a direction parallel to the film surface.

On the other hand, the {111} plane of the antiferromagnetic layer 4 formed on the fixed magnetic layer 3 is smaller than the degree of orientation of the {111} plane of the fixed magnetic layer 3, or It is non-oriented. That is, the pinned magnetic layer 3 shown in FIG.
The crystal orientation near the interface between the layer and the antiferromagnetic layer 4 is different, so that the structure at the interface tends to be in a mismatched state.

In the present invention, the interface structure between the pinned magnetic layer 3 and the antiferromagnetic layer 4 is set to a non-matching state from the stage before the heat treatment. This is because the structure is transformed from an irregular lattice (face-centered cubic lattice) to the above-described regular lattice so that an appropriate exchange anisotropic magnetic field can be obtained.

In other words, when the interface structure is in a matched state, the crystal structure of the antiferromagnetic layer 4 is unlikely to be transformed from an irregular lattice to a regular lattice even when heat treatment is performed, and therefore, the exchange anisotropic magnetic field Is not obtained.

In the present invention, the antiferromagnetic layer 4 is made of XM
n alloy (where X is Pt, Pd, Ir, Rh, Ru,
Os is one or more of these elements)
It is formed with. In particular, in the present invention, the antiferromagnetic layer 4
Is preferably formed of a PtMn alloy.

An X—Mn alloy, particularly a PtMn alloy, is a FeMn alloy conventionally used as an antiferromagnetic layer, and a Nt alloy.
It has better corrosion resistance than iMn alloy, etc., higher blocking temperature, and exchange anisotropic magnetic field (Hex)
And has excellent properties as an antiferromagnetic material.

In the present invention, the antiferromagnetic layer 4 is made of PtMn.
In the case where the antiferromagnetic layer 4 is formed of an alloy, the ratio c / a of the lattice constants a and c of the antiferromagnetic layer 4 in which at least a part of the crystal structure becomes a regular lattice after heat treatment is 0.93 to 0.93.
It is preferred that it be in the range of 0.99.

When the ratio c / a of the lattice constants a and c becomes 0.93 or less, almost all of the crystal structure of the antiferromagnetic layer 4 becomes a regular lattice. The adhesion between the layer 3 and the antiferromagnetic layer 4 is reduced, and peeling of the film occurs, which is not preferable.

When the ratio c / a of the lattice constants a and c is 0.99 or more, almost all of the crystal structure of the antiferromagnetic layer 4 becomes an irregular lattice, and is fixed to the antiferromagnetic layer 4. The exchange anisotropic magnetic field generated at the interface with the magnetic layer 3 is undesirably reduced.

The antiferromagnetic layer 4 is made of an X-Mn alloy (where X is Pt, Pd, Ir, Rh, Ru, Os
Of the fixed magnetic layer 3 before the heat treatment.
According to the present invention, the composition ratio of the X-Mn alloy is set within the following numerical values in order to make the interface structure between the magnetic layer and the antiferromagnetic layer 4 in a non-matching state.

The antiferromagnetic layer 4 is formed of an X—Mn alloy (where X is one or more of Pt, Pd, Ir, Rh, Ru, and Os),
Moreover, when the antiferromagnetic layer 4 is formed on the pinned magnetic layer 3 as shown in FIG. 1, the composition ratio of the element X of the X-Mn alloy is at% and is in the range of 47 to 57. Is preferred. More preferably, the composition ratio of the element X in the X-Mn alloy is a
In t%, it is in the range of 50 to 56.

When the antiferromagnetic layer 4 is formed within the composition ratio described above, the lattice constant of the antiferromagnetic layer 4 before the heat treatment, that is, at the stage when the crystal structure is an irregular lattice, and the fixed magnetic layer 3 The difference from the lattice constant can be increased, so that the interface structure between the fixed magnetic layer 3 and the antiferromagnetic layer 4 can be kept in a non-matching state before the heat treatment.

When heat treatment is performed in this state, a change in the crystal structure of the antiferromagnetic layer 4 generates an exchange anisotropic magnetic field, and as described above, the composition ratio of the element X of the X—Mn alloy. Is at% and within the range of 47 to 57, 400
It is possible to obtain an exchange anisotropic magnetic field of (Oe: Oersted) or more. When the composition ratio of the element X in the X-Mn alloy is at% and is in the range of 50 to 56, 600 (O
e) It is possible to obtain the above exchange anisotropic magnetic field.

As described above, according to the present invention, when the X-Mn alloy is used as the antiferromagnetic layer 4, by forming the composition ratio of the element X within the above range, the antiferromagnetic layer 4 before the heat treatment is formed. It is possible to maintain the interface structure between the magnetic layer and the pinned magnetic layer 3 in a non-matching state.

In the present invention, the X-Mn alloy is added with the element X 'as the third element, whereby the antiferromagnetic layer 4 is added.
Can be increased, and the interface structure between the antiferromagnetic layer 4 and the pinned magnetic layer 3 before the heat treatment can be brought into a non-matching state.

X-Mn obtained by adding an element X 'to an X-Mn alloy
—X ′ alloy is an interstitial solid solution in which element X ′ has penetrated into the space of a spatial lattice composed of elements X and Mn, or one of the lattice points of the crystal lattice composed of elements X and Mn. Part is a substitution type solid solution substituted by the element X ′. Here, a solid solution refers to a solid in which components are uniformly mixed over a wide composition range. In the present invention, the element X is preferably Pt.

In the present invention, the X-Mn-X 'alloy is formed by sputtering. By sputtering, the X—Mn—X ′ alloy is deposited in a non-equilibrium state,
The deposited X—Mn—X ′ alloy has an element X ′ in the film,
Penetrate into the space of the spatial lattice composed of the elements X and Mn,
Alternatively, part of the lattice points of the crystal lattice composed of the elements X and Mn is replaced with the element X ′. As described above, the element X ′ forms a solid solution in the lattice of the X—Mn alloy in an interstitial or substitutional manner, so that the lattice is expanded and the lattice constant of the antiferromagnetic layer 4 is reduced by the element X ′. It becomes larger than the case without addition.

In the present invention, various elements can be used as the element X '. However, when highly reactive halogen or O (oxygen) is used, these elements are selectively bonded only to Mn. It is considered that the crystal structure of face-centered cubic cannot be maintained, which is not preferable. Specific elements X 'in the present invention are Ne, Ar, Kr, Xe, Be,
B, C, N, Mg, Al, Si, P, Ti, V, Cr,
Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, N
b, Mo, Ag, Cd, Ir, Sn, Hf, Ta, W,
Re, Au, Pb, and rare earth elements (Sc, Y and lanthanoids (La, Ce, Pr, Nd, Pm, Sm, Eu,
Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu))
Is one or more elements.

The lattice constant of the antiferromagnetic layer 4 can be increased by sputtering by using any of the various elements X 'described above. In particular, when the substitution-type solid solution element X' is used. If the composition ratio of the element X ′ is too large, the antiferromagnetic property is reduced, and the exchange coupling magnetic field generated at the interface with the fixed magnetic layer 3 is reduced.

In particular, in the present invention, it is preferable to use a rare gas element (one or more of Ne, Ar, Kr and Xe) of an inert gas which forms a solid solution in an interstitial form as the element X '. I have. Since the rare gas element is an inert gas, even if the rare gas element is contained in the film, it does not greatly affect the antiferromagnetic characteristics. Further, Ar or the like is conventionally used as a sputtering gas in a sputtering apparatus. It is a gas to be introduced, and Ar can easily penetrate into the film simply by appropriately adjusting the gas pressure and the energy of the sputtered particles.

When a gas-based element is used as the element X ', it is difficult to contain a large amount of the element X' in the film. Just by exchanging the exchange coupling magnetic field generated by the heat treatment,
Experiments have shown that the size can be dramatically increased.

In the present invention, the range of the composition ratio of the element X 'is set, and the preferable composition range of the element X' is:
at% is from 0.2 to 10, more preferably at%
%, From 0.5 to 5. At this time, the elements X and M
The composition ratio X: Mn with n is preferably in the range of 4: 6 to 6: 4. The composition ratio of element X 'and element X
By adjusting the composition ratio X: Mn within the above range, the lattice constant of the antiferromagnetic layer 4 at the film formation stage (before heat treatment) can be increased, and the antiferromagnetic layer can be formed by heat treatment. The exchange coupling magnetic field generated at the interface between the layer 4 and the pinned magnetic layer 3 can be increased as compared with the case where the element X 'is not contained.

Further, in the present invention, an X-Mn-X 'alloy (where X is one or more elements of Pt, Pd, Ir, Rh, Ru, Os, and X'
Is Ne, Ar, Kr, Xe, Be, B, C, N, M
g, Al, Si, P, Ti, V, Cr, Fe, Co, N
i, Cu, Zn, Ga, Ge, Zr, Nb, Mo, A
g, Cd, Ir, Sn, Hf, Ta, W, Re, Au,
Pb and at least one of the rare earth elements), the antiferromagnetic layer 4 is formed on the fixed magnetic layer 3 as shown in FIG. -Mn
The composition ratio of X + X 'in the -X' alloy is at%, and is 47 to 57%.
And more preferably X-
The composition ratio of X + X 'in the Mn-X' alloy is at%,
56.

By performing the heat treatment, the exchange coupling magnetic field generated at the interface between the antiferromagnetic layer 4 and the pinned magnetic layer 3 causes
The magnetization of the fixed magnetic layer 3 is fixed as a single magnetic domain in the Y direction shown in FIG. When the element X 'of the X-Mn-X' alloy used as the antiferromagnetic layer 4 is, for example, a gas element, the element X 'escapes from the film by heat treatment. The element X 'at the stage of film formation
The composition ratio of the element X 'after the heat treatment may be smaller than the composition ratio of X, or the X' may completely escape from the film, resulting in a composition of X-Mn.
If the interface structure between the pinned magnetic layer 3 and the antiferromagnetic layer 4 in the film formation stage (before the heat treatment) is in a non-matching state, the crystal structure of the antiferromagnetic layer 4 becomes It is possible to appropriately transform from a regular lattice (face-centered cubic lattice) to a regular lattice and obtain a large exchange anisotropic magnetic field.

The free magnetic layer 1 is aligned in the X direction in the figure by the hard bias layers 5 and 5 formed on both sides thereof.

In the single spin-valve thin film element shown in FIG. 1, the conductive layer 8 is replaced with the free magnetic layer 1 and the non-magnetic conductive layer 2.
When a stationary current (sense current) is applied to the fixed magnetic layer 3 and a magnetic field is applied in the Y direction from the recording medium,
The magnetization direction of the free magnetic layer 1 changes from the X direction to the Y direction. At this time, conduction electrons are scattered at the interface between the nonmagnetic conductive layer 2 and the pinned magnetic layer 3 or at the interface between the nonmagnetic conductive layer 2 and the free magnetic layer 1, and the electric resistance changes.
Therefore, the voltage changes, and a detection output can be obtained.

FIG. 2 is a sectional view showing the structure of a single spin-valve thin film element according to a second embodiment of the present invention. As shown in FIG. 2, an underlayer 6, an antiferromagnetic layer 4, a fixed magnetic layer 3, a nonmagnetic conductive layer 2, and a free magnetic layer 1 are sequentially stacked from below.

The antiferromagnetic layer 4 shown in FIG. 2 is made of an X-Mn alloy (X
Is one or more of Pt, Pd, Ir, Rh, Ru, and Os), preferably Pt
Mn alloy or X-Mn-X 'alloy (where X' is
Ne, Ar, Kr, Xe, Be, B, C, N, Mg, A
1, Si, P, Ti, V, Cr, Fe, Co, Ni, C
u, Zn, Ga, Ge, Zr, Nb, Mo, Ag, C
d, Ir, Sn, Hf, Ta, W, Re, Au, Pb,
And one or more of rare earth elements).

The pinned magnetic layer 3, the non-magnetic conductive layer 2, and the free magnetic layer 1 are formed of the material described with reference to FIG.

Also in this embodiment, the interface structure between the fixed magnetic layer 3 and the antiferromagnetic layer 4 is in a non-matching state.
The crystalline structure of at least part of the at the interface antiferromagnetic layer 4 has a L1 ₀ type of face-centered tetragonal lattice (hereinafter referred to as ordered lattice).

The {111} plane of the antiferromagnetic layer 4 formed on the Ta underlayer 6 is preferentially oriented in a direction parallel to the interface, but as shown in FIG. When the pinned magnetic layer 3 is formed on the layer 4, the degree of orientation of the pinned magnetic layer 3 with respect to the {111} plane interface direction is smaller than the degree of orientation of the antiferromagnetic layer 4 or non-oriented. Tends to be As described above, in FIG. 2, the crystal orientation of the antiferromagnetic layer 4 and the pinned magnetic layer 3 at the interface are different from each other, and therefore, the interface structure can be made more mismatched.

The antiferromagnetic layer 4 is formed of an X—Mn alloy (where X is one or more of Pt, Pd, Ir, Rh, Ru, and Os). As shown in FIG. 2, the antiferromagnetic layer 4 is
, The X-M constituting the antiferromagnetic layer 4
The composition ratio of the element X in the n-alloy is preferably at%, and is preferably in the range of 44 to 57. Within this range, 400
It is possible to obtain an exchange anisotropic magnetic field of (Oe) or more. More preferably, the composition ratio of the element X in the X-Mn alloy is a
At t%, it is in the range of 46 to 55. Within this range, an exchange anisotropic magnetic field of 600 (Oe) or more can be obtained.

As described above, the exchange anisotropic magnetic field can be increased when the content is within the above-described composition range because the lattice constant (irregular lattice) of the antiferromagnetic layer 4 before the heat treatment and the fixed magnetic layer 3 The difference with the lattice constant of
This is because the interface structure before the heat treatment can be brought into a mismatched state.

Therefore, by performing the heat treatment, the crystal structure of at least a part of the antiferromagnetic layer 4 at the interface is changed.
It is possible to transform the disordered lattice into a regular lattice required to exhibit an exchange anisotropic magnetic field.

The antiferromagnetic layer 4 is made of X--Mn--X '.
Alloys (where X 'is Ne, Ar, Kr, Xe, Be,
B, C, N, Mg, Al, Si, P, Ti, V, Cr,
Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, N
b, Mo, Ag, Cd, Ir, Sn, Hf, Ta, W,
One or two of Re, Au, Pb, and rare earth elements
X-Mn
The -X 'alloy is formed by a sputtering method and becomes an interstitial solid solution in which the element X' penetrates into the space of a spatial lattice composed of the elements X and Mn, or a crystal lattice composed of the elements X and Mn. Is a substitution type solid solution in which a part of lattice points is replaced by the element X ′.

The lattice constant of the antiferromagnetic layer 4 containing the element X ′ in the film becomes larger than the lattice constant of the antiferromagnetic layer 4 not containing the element X ′, and the film formation stage (before the heat treatment) In this case, the interface structure between the antiferromagnetic layer 4 and the pinned magnetic layer 3 can be kept in a non-matching state.

In the present invention, the composition ratio of the element X 'in the film is set in the range of 0.2 to 10 at at%, and more preferably 0.5 to 5 in at%. And inside. The element X 'is formed within the above composition range, and the composition ratio X: Mn of the element X to Mn is changed to 4: 6.
If it is within the range of ６6: 4, it is possible to obtain a larger exchange coupling magnetic field.

In the present invention, as shown in FIG.
When the antiferromagnetic layer 4 formed of the Mn-X 'alloy is formed below the fixed magnetic layer 3, X + of the X-Mn-X' alloy
The composition ratio of X 'is preferably in the range of 44 to 57 in at%. More preferably, the composition ratio of X + X 'in the X-Mn-X' alloy is at% and is in the range of 46 to 55.

Note that the magnetization of the fixed magnetic layer 3 shown in FIG.
Due to the exchange anisotropic magnetic field generated at the interface with the antiferromagnetic layer 4, the magnetic field is fixed in a single magnetic domain in the Y direction in the drawing.

As shown in FIG. 2, an exchange bias layer 9 (antiferromagnetic layer) is formed on the free magnetic layer 1 with an interval of the track width Tw. The exchange bias layer 9 is made of an X-Mn alloy (X
Is one or more of Pt, Pd, Ir, Rh, Ru, and Os), preferably Pt
Mn alloy or X-Mn-X 'alloy (where X' is
Ne, Ar, Kr, Xe, Be, B, C, N, Mg, A
1, Si, P, Ti, V, Cr, Fe, Co, Ni, C
u, Zn, Ga, Ge, Zr, Nb, Mo, Ag, C
d, Ir, Sn, Hf, Ta, W, Re, Au, Pb,
And one or more of rare earth elements).

The composition ratio of the element X in the X—Mn alloy is at%
In the range of 47 to 57. More preferably, the composition ratio of the element X of the X-Mn alloy is 50 to 56 at%.
Is within the range. This composition range is the same as the composition range of the antiferromagnetic layer 4 described with reference to FIG. X-Mn-
In the case of the X 'alloy, the composition ratio of the element X' is at%,
And a more preferred composition range is at%.
And is in the range of 0.5 to 5. Further, the composition ratio X: Mn of the element X and Mn is preferably in the range of 4: 6 to 6: 4. Further, X + of the X—Mn—X ′ alloy
The composition ratio of X 'is at%, preferably in the range of 47 to 57, and more preferably the composition ratio of X + X' in the X-Mn-X 'alloy is at% and in the range of 50 to 56. Is within.

When the composition is within the above range, the interface structure between the free magnetic layer 1 and the exchange bias layer 9 is in a non-matching state, and an exchange anisotropic magnetic field of 400 (Oe) or more can be obtained at least at the interface. However, as shown in FIG. 2, since the exchange bias layers 9 and 9 are not formed in the track width Tw portion, both end portions of the free magnetic layer 1 are strongly affected by the exchange anisotropic magnetic field. A single magnetic domain is formed in the X direction as shown in FIG.
The magnetization of the w region is appropriately aligned in the X direction in the figure to such an extent that it reacts to an external magnetic field.

In the single spin-valve thin film element thus formed, the external magnetic field in the Y direction shown in FIG.
The magnetization in the track width Tw region of the free magnetic layer 1 changes from the illustrated X direction to the illustrated Y direction. The electric resistance changes depending on the relationship between the change in the direction of magnetization in the free magnetic layer 1 and the fixed magnetization direction (Y direction in the drawing) of the fixed magnetic layer 3, and a voltage change based on the change in the electric resistance value causes A leakage magnetic field from the recording medium is detected.

FIG. 3 is a sectional view showing the structure of a dual spin-valve thin film element according to a third embodiment of the present invention. As shown in the figure, an underlayer 6, an antiferromagnetic layer 4, a fixed magnetic layer 3, a nonmagnetic conductive layer 2, and a free magnetic layer 1 are sequentially stacked from below. Further, on the free magnetic layer 1, a nonmagnetic conductive layer 2, a fixed magnetic layer 3, an antiferromagnetic layer 4, and a protective layer 7 are successively laminated.

Hard bias layers 5, 5 and conductive layers 8, 8 are laminated on both sides of the multilayer film from the base layer 6 to the protective layer 7.

Note that each layer is formed of the same material as that described with reference to FIGS.

As shown in FIG. 3, the antiferromagnetic layer 4 formed below the free magnetic layer 1 is formed below the fixed magnetic layer 3, so that the antiferromagnetic layer 4 shown in FIG. Similarly to the layer 4, the composition ratio of the element X in the X-Mn alloy constituting the antiferromagnetic layer 4 is preferably at% and is in the range of 44 to 57, more preferably X-Mn alloy. The composition ratio of the element X in at% is in the range of 46 to 55.

Further, since the antiferromagnetic layer 4 formed above the free magnetic layer 1 is formed on the fixed magnetic layer 3, the antiferromagnetic layer 4 is formed in the same manner as the antiferromagnetic layer 4 shown in FIG. The composition ratio of the element X of the X-Mn alloy constituting the antiferromagnetic layer 4 is preferably at% and in the range of 47 to 57, more preferably the composition ratio of the element X of the X-Mn alloy. Is a
In t%, it is in the range of 50 to 56.

[0131] Within this composition range, the difference between the lattice constant of the fixed magnetic layer 3 and the lattice constant of the antiferromagnetic layer 4 before the heat treatment can be increased. Therefore, by performing the heat treatment, the crystal structure of a part of the antiferromagnetic layer 4 at the interface is transformed from the disordered lattice to the ordered lattice required for exhibiting the exchange anisotropic magnetic field. It is possible. When the antiferromagnetic layer 4 is formed of a PtMn alloy, the ratio c / a of the lattice constants a and c of the antiferromagnetic layer 4 after the heat treatment is in the range of 0.93 to 0.99. Is preferred.

Further, since the crystal orientations of the antiferromagnetic layer 4 and the pinned magnetic layer 3 are different, it is possible to make the interface structure more mismatched.

Within the above composition range, at least 4
Although it is possible to obtain an exchange anisotropic magnetic field of 00 (Oe) or more, forming the antiferromagnetic layer 4 below the fixed magnetic layer 3 is more effective than forming it on the fixed magnetic layer 3. It is possible to slightly widen the range of the composition ratio of the element X in the X-Mn alloy.

When the antiferromagnetic layer 4 is formed of an X—Mn—X ′ alloy, the composition ratio of the element X ′ is at%,
It is in the range of 0.2 to 10, and a more preferred composition range is at%, and in the range of 0.5 to 5. Elements X and M
The composition ratio X: Mn with n is preferably in the range of 4: 6 to 6: 4.

Further, in the case of the antiferromagnetic layer 4 formed below the free magnetic layer 1, the composition ratio of X + X 'of the X-Mn-X' alloy constituting the antiferromagnetic layer 4 is at%.
It is preferable that the composition ratio of X + X ′ in the X—Mn—X ′ alloy is at
%, In the range of 46-55.

In the case of the antiferromagnetic layer 4 formed above the free magnetic layer 1, the composition ratio of X + X 'of the X-Mn-X' alloy constituting the antiferromagnetic layer 4 is at%.
It is preferable that the composition ratio of X + X ′ in the X—Mn—X ′ alloy be at least at 47 to 57.
% In the range of 50-56.

Within the above composition range, the difference between the lattice constant of the pinned magnetic layer 3 before the heat treatment and the lattice constant of the antiferromagnetic layer 4 can be increased, and the interface structure before the heat treatment is brought into a non-matching state. Therefore, by performing heat treatment, the crystal structure of a part of the antiferromagnetic layer 4 at the interface is transformed from the disordered lattice to the ordered lattice required for exhibiting the exchange anisotropic magnetic field. Is possible.

In this dual spin-valve thin film element, similarly to the single spin-valve thin film element shown in FIG.
The magnetization of the free magnetic layer 1 is affected by the hard bias layers 5 and 5 and is fixed in a single magnetic domain.
It is aligned in the direction.

When a steady current is applied from the conductive layer 8 to the free magnetic layer 1, the nonmagnetic conductive layer 2, and the fixed magnetic layer 3 and a magnetic field is applied from the recording medium in the Y direction, the magnetization of the free magnetic layer 1 is Fluctuates from the X direction to the Y direction. At this time, spin-dependent scattering of conduction electrons occurs at the interface between the nonmagnetic conductive layer 2 and the free magnetic layer 1 and at the interface between the nonmagnetic conductive layer 2 and the fixed magnetic layer 3. As a result, the electric resistance changes, and the leakage magnetic field from the recording medium is detected.

In the single spin-valve thin film device shown in FIGS. 1 and 2, the place where the electron scattering depending on the spin occurs at the interface between the nonmagnetic conductive layer 2 and the free magnetic layer 1 and the nonmagnetic conductive layer. In the dual spin-valve thin-film element shown in FIG. 3, the scattering of conduction electrons occurs between the non-magnetic conductive layer 2 and the free magnetic layer 1 in contrast to the two places at the interface between the layer 2 and the pinned magnetic layer 3. And two interfaces between the nonmagnetic conductive layer 2 and the pinned magnetic layer 3, so that the dual spin-valve thin-film element is compared with the single spin-valve thin-film element. It is possible to obtain a large resistance change rate.

FIG. 4 is a sectional view showing the structure of an AMR type thin film element according to a fourth embodiment of the present invention. As shown in the figure,
From below, a soft magnetic layer (SAL layer) 10 and a non-magnetic layer (SHUN)
A T layer 11 and a magnetoresistive layer (MR layer) 12 are continuously stacked.

For example, the soft magnetic layer 10 is made of Fe—Ni—
Nb alloy, nonmagnetic layer 11 is a Ta film, magnetoresistive layer 12
Is formed of a NiFe alloy.

On the magnetoresistive layer 12, exchange bias layers (antiferromagnetic layers) 9, 9 are formed on both sides of the magnetoresistive layer 12 in the X direction with an increased track width Tw, and further, the exchange bias layers 9, 9 are formed. The conductive layers 13, 13 formed of a Cr film or the like are formed thereon.

The exchange bias layer 9 shown in FIG.
9 is made of an X-Mn alloy, preferably a PtMn alloy, similarly to the exchange bias layers 9 and 9 shown in FIG. 2, and the composition ratio of the element X of the X-Mn alloy is at%.
It is in the range of 47-57. More preferably X-
The composition ratio of the element X in the Mn alloy is at% and is in the range of 50 to 56.

The exchange bias layers 9, 9
Is an X-Mn-X 'alloy (where X' is Ne, Ar,
Kr, Xe, Be, B, C, N, Mg, Al, Si,
P, Ti, V, Cr, Fe, Co, Ni, Cu, Zn,
Ga, Ge, Zr, Nb, Mo, Ag, Cd, Ir, S
n, Hf, Ta, W, Re, Au, Pb, and at least one of the rare earth elements), and the composition ratio of the element X 'is at. 2-10
And the more preferable composition range is at%,
It is in the range of 0.5 to 5. Further, the composition ratio X: Mn of the element X and Mn is preferably in the range of 4: 6 to 6: 4. The exchange bias layers 9 and 9 shown in FIG.
Similarly to No. 9, the composition ratio of X + X 'in the X-Mn-X' alloy is at% and is in the range of 47 to 57. More preferably, the composition ratio of X + X 'in the X-Mn-X' alloy is at%.
And is in the range of 50 to 56.

The X-Mn alloy or X-Mn-X '
If the composition ratio of the alloy is formed within the above range, the interface structure between the exchange bias layers 9 and 9 and the magnetoresistive layer 12 will be in a non-matching state, and by performing heat treatment,
When the thickness of the magnetoresistive layer 12 of the iFe alloy is 200 to 300 Å, about 40 to 110 at the interface.
(Oe) exchange anisotropic magnetic field is obtained.
When the thickness of the magnetoresistive layer of the e-alloy is about 200 angstroms, an exchange anisotropic magnetic field of about 60 to 110 (Oe) is obtained, and the region B of the magnetoresistive layer 12 shown in FIG. A single magnetic domain is formed in the X direction. This induces the magnetization of the region A of the magnetoresistive layer 12 to be aligned in the X direction in the drawing. Further, a current magnetic field generated when the detection current flows through the magnetoresistive layer 12 is applied to the soft magnetic layer 10 in the Y direction,
A transverse bias magnetic field is applied to the region A of the magnetoresistive layer 12 in the Y direction by the magnetostatic coupling energy provided by the soft magnetic layer 10. By applying the lateral bias layer to the region A of the magnetoresistive layer 12 which is divided into single magnetic domains in the X direction, a change in resistance to a magnetic field change in the region A of the magnetoresistive layer 12 (magnetoresistance effect characteristics: HR effect characteristics) ) Are set to have linearity.

The moving direction of the recording medium is the Z direction. When a leakage magnetic field is applied in the Y direction in the figure, the A
The resistance value of the region changes, and this is detected as a voltage change.

As described in detail above, in the present invention, the antiferromagnetic layer 4 (or the exchange bias layer 9) is
Mn alloy (X is Pt, Pd, Ir, Rh, R
u or Os), preferably a PtMn alloy, by appropriately adjusting the composition ratio of the antiferromagnetic layer 4 to form the antiferromagnetic layer 4. The interface structure between the layer 4 and the pinned magnetic layer 3 (or the free magnetic layer 1 or the magnetoresistive layer 12) formed in contact with the antiferromagnetic layer 4 can be brought into a non-matching state,
Therefore, a larger exchange anisotropic magnetic field can be obtained, and the reproduction characteristics can be improved as compared with the related art. Alternatively, the antiferromagnetic layer 4 (or the exchange bias layer 9)
In addition to the elements X and Mn, an element X 'as the third element (where X' is Ne, Ar, Kr, Xe, Be, B, C,
N, Mg, Al, Si, P, Ti, V, Cr, Fe, C
o, Ni, Cu, Zn, Ga, Ge, Zr, Nb, M
o, Ag, Cd, Ir, Sn, Hf, Ta, W, Re,
Au, Pb, and one or more of the rare earth elements) can increase the lattice constant of the antiferromagnetic layer 4 as compared with the case where the element X 'is not added. Therefore, the interface structure between the antiferromagnetic layer 4 and the fixed magnetic layer 3 (or the free magnetic layer 1 or the magnetoresistive layer 12) formed in contact with the antiferromagnetic layer 4 is set in a non-matching state. Therefore, a larger exchange anisotropic magnetic field can be obtained, and the reproduction characteristics can be improved as compared with the related art. It is preferable that the crystal orientations of the antiferromagnetic layer 4 and the pinned magnetic layer 3 be different from each other because the interface structure can be more easily brought into a mismatched state.

The exchange anisotropic magnetic field can be obtained by keeping the interface structure in a non-matching state because the heat treatment is performed to change the crystal structure of the antiferromagnetic layer 4 from an irregular lattice to a regular lattice. This is because transformation can be performed, but if all the crystal structures are transformed into a regular lattice, a problem occurs in adhesion and the like. Therefore, it is preferable that only a part of the crystal structure is transformed into a regular lattice. For example, when the antiferromagnetic layer 4 is formed of a PtMn alloy, the ratio c / a of the lattice constants a and c of the antiferromagnetic layer 4 after the heat treatment is set to 0.1.
It is preferably in the range of 93 to 0.99 (by the way, when all the crystal structures are transformed into a regular lattice, the ratio c / a of the lattice constants a and c is 0.918).

In the present invention, the structure of the magnetoresistance effect element layer is not limited to the structure shown in FIGS.
For example, in the case of the single spin-valve thin film element shown in FIG. 1, the exchange bias layer may be formed below the free magnetic layer 1 with an interval of the track width Tw without forming the hard bias layers 5 and 5. In the case of the single spin-valve thin film element shown in FIG. 2, the exchange bias layers 9 and 9 are not formed, and the underlayer 6 and the protective layer 7 are removed.
Up to 6 layers, or at least the free magnetic layer 1
Hard bias layers may be formed on both sides of the substrate.

FIG. 5 is a cross-sectional view of the structure of the read head on which the magnetoresistive element layers shown in FIGS. 1 to 4 are formed, as viewed from the side facing the recording medium. Reference numeral 20 denotes a lower shield layer formed of, for example, a NiFe alloy,
A lower gap layer 21 is formed on the lower shield layer 20. Also, on the lower gap layer 21, FIG.
4 is formed, an upper gap layer 23 is formed on the magnetoresistive element layer 22, and a NiFe alloy is formed on the upper gap layer 23. An upper shield layer 24 is formed.

The lower gap layer 21 and the upper gap
The layer 23 is made of, for example, SiO_TwoAnd Al_TwoO _Three(Alumina) etc.
Formed of an insulating material. As shown in FIG.
The lower gap layer 21 to the upper gap layer 23
The length is the gap length Gl, and this gap length Gl is small.
It has become possible to cope with higher recording density.

[0153]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, first, a multilayer film having the following film configuration is formed, and the relationship between the Pt amount of one element constituting the antiferromagnetic layer and the lattice constant of the antiferromagnetic layer is examined. Was.

As the film configuration, from the bottom, a Si substrate / alumina / underlayer: Ta (100) / fixed magnetic layer: NiFe
(300) / antiferromagnetic layer: PtMn (300) / Ta
The layers were stacked in the order of (100). The numerical values in the parentheses indicate the film thickness, and the unit is angstrom.

In the experiment, the relationship between the amount of Pt and the lattice constant of the antiferromagnetic layer was determined from the diffraction pattern peak position by the θ / 2θ method of X-ray diffraction before the heat treatment was performed.

As shown in FIG. 6, it can be seen that the lattice constant of the antiferromagnetic layer (PtMn) increases as the amount of Pt increases. In addition, NiF constituting the pinned magnetic layer
The lattice constant of the e alloy, the CoFe alloy, or Co ranges from about 3.5 to 3.6 as shown in the figure.

Next, two multilayer films having an antiferromagnetic layer formed below or above the pinned magnetic layer were formed by DC magnetron sputtering, and the Pt after heat treatment was performed.
The relationship between the quantity (one element constituting the antiferromagnetic layer) and the exchange anisotropic magnetic field was examined. FIG. 7 shows the experimental results.

The film configuration in which the antiferromagnetic layer is formed below the pinned magnetic layer is as follows: Si substrate / alumina / underlayer: Ta (50) / antiferromagnetic layer: PtMn (300)
/ Fixed magnetic layer: Co ₉₀ Fe ₁₀ (30) / Protective layer: Ta
(100), and the antiferromagnetic layer is formed on the fixed magnetic layer. From the bottom, the film configuration is Si substrate / alumina / Ta (50) / fixed magnetic layer: Co ₉₀ Fe
₁₀ (30) / antiferromagnetic layer (300) / protective layer: Ta (1
00). The numerical values in the parentheses indicate the film thickness, and the unit is angstrom.

The conditions in the heat treatment step were as follows: first, the temperature was raised for 3 hours, the temperature at 240 ° C. was maintained for 3 hours, and the temperature was lowered for 3 hours. Note that the heat treatment vacuum degree was set to 5 × 10 ⁻⁶ Torr or less.

As shown in FIG. 7, the antiferromagnetic layer (PtMn)
Alloy) is below and above the fixed magnetic layer, the exchange anisotropic magnetic field increases as the Pt amount increases to about 50 at%, and the Pt amount increases to about 50 at%. From the above, it can be seen that the exchange anisotropic magnetic field gradually decreases.

In order to obtain an exchange anisotropic magnetic field of 400 (Oe) or more, when the antiferromagnetic layer (PtMn) is formed below the pinned magnetic layer, the Pt content is within the range of 44 to 57 at%.
When the antiferromagnetic layer (PtMn) is formed on the upper side of the pinned magnetic layer, it can be seen that the Pt amount may be appropriately adjusted within the range of 47 to 57 at%.

In order to obtain an exchange anisotropic magnetic field of 600 (Oe) or more, when the antiferromagnetic layer (PtMn) is formed below the fixed magnetic layer, the Pt content is set within the range of 46 to 55 at%. When the antiferromagnetic layer (PtMn) is formed on the upper side of the pinned magnetic layer, it can be seen that the Pt amount may be appropriately adjusted within the range of 50 to 56 at%.

From the above experimental results, the antiferromagnetic layer (PtM
Four types of multilayer films were formed as an example in which the composition ratio of n) was appropriately adjusted, and one type of multilayer film was formed as a comparative example.
The orientation of each film, the exchange anisotropic magnetic field, and the like were examined. Table 1 shows the experimental results.

[0164]

[Table 1]

The multilayer films of Examples 1 to 5 are single spin-valve thin film devices, and the multilayer films of the embodiments are dual spin-valve thin film devices. Further, the multilayer film of the comparative example has the same film configuration as the multilayer film of the example, but differs only in the composition ratio of the antiferromagnetic layer (PtMn).

In the multilayer film of the embodiment, Co—Fe and Ni—Fe are laminated on Cu (nonmagnetic conductive layer), and these two layers constitute a free magnetic layer. Similarly, in the multilayer film of the embodiment, Ni—Fe and Co—Fe are stacked under Cu (nonmagnetic conductive layer), and these two layers constitute a free magnetic layer. In the multilayer film of the embodiment, C is provided between two Cu (non-magnetic conductive layers).
Although o-Fe, Ni-Fe, and Co-Fe are stacked, the three layers constitute a free magnetic layer.

As shown in Table 1, in the multilayer films of Examples 1 to 3, the lattice matching at the interface between PtMn (antiferromagnetic layer) and CoFe (fixed magnetic layer) is "none". On the other hand, in the multilayer film of the comparative example, the lattice matching at the interface is “present”.

Looking at the column of “degree of ordering of PtMn after heat treatment at 240 ° C.”, the multilayer films of Examples 1 to 3 show “O”.
On the other hand, in the multilayer film of the comparative example, it is "x".

Further, looking at the columns of “exchange anisotropic magnetic field” and “resistance change rate”, it can be seen that the multilayer films of Examples 1 to 3 have large exchange anisotropic magnetic field and resistance change rate. On the other hand, it can be seen that the exchange anisotropic magnetic field and the rate of change in resistance of the multilayer film of the comparative example are much smaller than those of the multilayer films of Examples 1 to 3.

The above experimental results relate to the composition ratio of the PtMn alloy. As shown in Table 1, the Pt amount of PtMn in the comparative example is 44 at%, whereas the Pt amount of PtMn in Examples 1 to 4 is 49 to 51 at%.

For this reason, referring to FIG. 6 (before heat treatment), the lattice constant of PtMn in the comparative example is smaller than the lattice constant of PtMn in Examples 1 to 3, and the comparative example has a smaller lattice constant in Examples 1 to 3. In comparison, it can be seen that the difference between the lattice constant of PtMn (antiferromagnetic layer) and the lattice constant of Co—Fe (fixed magnetic layer) is small.

That is, at the stage before the heat treatment, in the multilayer film of the comparative example, the interface structure between PtMn and CoFe tends to be in a matching state, whereas in the multilayer films of Examples 1 to 3, the interface structure between PtMn and CoFe is easily obtained. Are likely to be in an inconsistent state.

Before the heat treatment, the crystal structures of PtMn of the examples and the comparative examples have an irregular lattice (face-centered cubic lattice). However, in the comparative example in which the interface structure is in a matched state, the heat treatment is performed. However, the crystal structure of PtMn cannot be transformed from an irregular lattice to a regular lattice, and the ordering does not proceed at all.

[0174] In contrast, the interface structure in the multilayer films of Examples - that is misaligned, by heat treatment, the crystal structure of PtMn is partially ordered lattice (Ll ₀ type from disordered lattice (A face-centered square lattice), and the ordering has sufficiently progressed.

FIG. 8 shows the Pt of the embodiment after the heat treatment.
3 is a high-resolution TEM photograph showing an interface structure between Mn and CoFe. As shown in FIG. 8, at the interface between PtMn and CoFe, the arrangement direction of the atoms of PtMn and the arrangement direction of the atoms of CoFe do not match, which indicates that they are in a non-matching state.

On the other hand, FIG. 9 shows a high-resolution TE showing the interface structure between PtMn and CoFe of the comparative example after the heat treatment.
It is an M photograph. As shown in FIG. 9, PtMn and CoFe
At the interface with, the arrangement direction of the atoms of PtMn matches the arrangement direction of the atoms of CoFe, and it can be seen that they are in a matched state.

FIG. 10 shows an experimental result after heat treatment in which the degree of ordering of PtMn in the multilayer film of the example was measured, and FIG. 11 was a measurement of the degree of ordering of PtMn in the multilayer film of the comparative example. Experiments have shown that two equivalent ｛11 in PtMn
The angle formed by the 1 ° plane was measured, and the degree of ordering was determined from the angle formed. The horizontal axis indicates the distance from the interface between PtMn and CoFe to the PtMn side.

As shown in FIG. 10, the measured values of the angles formed by the {111} planes are scattered in a range from about 65 ° to about 72 °, and the crystal structure of PtMn has an irregular lattice before heat treatment. It can be seen that a part has changed to form a regular lattice.

On the other hand, in FIG. 11, the measured value of the angle formed by the {111} plane falls within the range of about 70 to about 71, and the crystal structure of PtMn is It can be seen that the state of the irregular lattice is maintained.

As described above, in the multilayer films of Examples 1 to 3, by setting the Pt content of PtMn to 49 to 51 at%, the interface structure can be brought into a non-matching state, so that the ordering can be appropriately advanced. As can be seen from FIG. 7, the exchange anisotropic magnetic field generated at the interface between PtMn and CoFe has a very large value.

On the other hand, in the multilayer film of the comparative example, since the Pt amount of PtMn was as low as 44 at%, the interface structure was in a matching state, and thus the ordering did not proceed properly. As can be seen from FIG. Exchange anisotropic magnetic field generated at the interface between Co and CoFe has a very small value.

In order to make the interface structure between PtMn and CoFe inconsistent, the crystal orientation of PtMn and CoFe
It is preferable that the crystal orientation is different.

The "strong", "medium", and "weak" degrees of orientation of the {111} plane shown in Table 1 represent the preferential degrees of orientation with respect to the film plane direction. As shown in Table 1, PtMn of Comparative Example
Of the {111} plane of CoFe (fixed magnetic layer) are both "strong".

This can be explained by referring to the film configuration of the embodiment.
NiFe, CoFe (free magnetic layer), Cu (non-magnetic conductive layer) and CoFe (fixed magnetic layer) formed on Ta are strongly affected by Ta as an underlayer, and
Since the degree of orientation of the 11 ° plane becomes strong and the difference between the lattice constant of CoFe (fixed magnetic layer) and the lattice constant of PtMn (antiferromagnetic layer) before the heat treatment is small as seen with reference to FIG. The {111} plane of PtMn is
The film is strongly influenced by the degree of orientation of the 1 強 く plane, and is preferentially oriented in the film surface direction.

On the other hand, in the embodiment, NiFe, CoFe (free magnetic layer), Cu (nonmagnetic conductive layer) and CoFe (fixed magnetic layer) formed on Ta are affected by Ta as the underlayer. Although it is strongly received, the degree of orientation of the {111} plane increases, but as can be seen with reference to FIG. 6, the lattice constant of CoFe (fixed magnetic layer) and Pt before heat treatment are increased.
Since the difference from the lattice constant of Mn (antiferromagnetic layer) is large,
The {111} plane of PtMn is not significantly affected by the crystal orientation of CoFe, and the degree of orientation in the film plane direction is weak.

In the case of the embodiment in which CoFe (fixed magnetic layer) is stacked on PtMn,
Is formed on PtMn, CoFe {111}
The degree of plane orientation is weakened, so that the crystal orientations of PtMn and CoFe are automatically oriented in different directions.

Next, in the present invention, the antiferromagnetic layer is formed of Pt—Mn.
-X '(X' = Ar) alloy, the amount of element X 'and P
The relationship with the lattice constant of the t-Mn-X 'alloy was examined. The film configuration used in the experiment was as follows: Si substrate / alumina / Ta (50) / Co ₉₀ Fe ₁₀ (30) / Pt—Mn
-X '(300) / Ta (100). The numerical value in parentheses indicates the film thickness, and the unit is angstrom.

The formation of the antiferromagnetic layer is performed in a sputtering apparatus.
Three types of targets in which the ratio of Pt to Mn is 6: 4, 5: 5, and 4: 6 are prepared, and by using each of the targets, the introduction gas pressure of Ar as the element X ′ is changed. A Pt—Mn—X ′ (X ′ = Ar) alloy film was formed by DC magnetron sputtering and ion beam sputtering. The amount of X ′ (X ′ = Ar) occupying in the Pt—Mn—X ′ (X ′ = Ar) alloy film and the amount of Pt—Mn—
The relationship between X ′ (X ′ = Ar) and the lattice constant was measured. FIG. 12 shows the experimental results.

As shown in FIG. 12, even when the composition ratio of Pt and Mn is any of 6: 4, 5: 5, and 4: 6, the element X '(X' = Ar) It can be seen that the lattice constant of Pt—Mn—X ′ (X ′ = Ar) increases as the amount increases. The lattice constant of the NiFe alloy, CoFe alloy or Co 2 constituting the pinned magnetic layer is in the range of about 3.5 to 3.6 as shown in FIG. Also, in this experiment, the element X '(X' = Ar)
Although the experiment was not conducted for the case where the content was set to about 4 at% and the content was larger than that, the reason was that even if the gas pressure was increased because Ar which is the element X 'was a gas element,
This is because it is difficult to contain Ar in the film.

Next, the Pt—Mn—
The X ′ (X ′ = Ar) alloy film was subjected to the following heat treatment step. As conditions in the heat treatment step, first, the temperature was raised for 3 hours, then the temperature of 240 ° C. was maintained for 3 hours, and further, the temperature was lowered for 3 hours. Note that the heat treatment vacuum degree was set to 5 × 10 ⁻⁶ Torr or less.

FIG. 13 shows that Pt--Mn--X '(X' = A
r) A graph showing the relationship between the amount of element X '(X' = Ar) in the alloy film and the magnitude of the exchange coupling magnetic field generated at the interface between the antiferromagnetic layer and the pinned magnetic layer by the heat treatment. As shown in FIG. 13, it can be seen that as the amount of the element X ′ (X ′ = Ar) increases, the exchange coupling magnetic field increases. That is, when the element X ′ (X ′ = Ar) is added to PtMn, a larger exchange coupling magnetic field can be obtained as compared with the case where the element X ′ (X ′ = Ar) is not added.

Next, in the present invention, using another element X ',
The antiferromagnetic layer is formed of a Pt—Mn—X ′ (X ′ = Mo) alloy, and the amount of element X ′ (X ′ = Mo) and Pt—Mn—X ′
The relation with the lattice constant of the (X ′ = Mo) alloy film was examined. The film configuration used in the experiment was as follows: Si substrate / alumina / Ta (50) / Co ₉₀ Fe ₁₀ (30) / Pt—Mn
-X '(300) / Ta (100). The numerical value in parentheses indicates the film thickness, and the unit is angstrom.

For the formation of the antiferromagnetic layer, a composite target in which a chip of the element X '(X' = Mo) is bonded to a PtMn target is prepared, and the area ratio of the chip to the target is changed. , The element X 'in the film
(X ′ = Mo), the amount of the element X ′ (X ′ = Mo) was changed.
The relationship between the amount of Mo) and the lattice constant of the Pt—Mn—X ′ (X ′ = Mo) alloy was measured. FIG. 14 shows the experimental results.
Shown in

As shown in FIG. 14, even when the composition ratio of Pt and Mn is 6: 4, 1: 1, or 4: 6, the element X '(X' = It can be seen that as the concentration of Mo) increases, the lattice constant of Pt—Mn—X ′ (X ′ = Mo) increases. Note that the lattice constant of the NiFe alloy, CoFe alloy, or Co constituting the pinned magnetic layer is in the range of about 3.5 to 3.6, as shown in FIG.

Next, the Pt—Mn—
The X ′ (X ′ = Mo) alloy film was subjected to the following heat treatment step. As conditions in the heat treatment step, first, the temperature was raised for 3 hours, then the temperature of 240 ° C. was maintained for 3 hours, and further, the temperature was lowered for 3 hours. Note that the heat treatment vacuum degree was set to 5 × 10 ⁻⁶ Torr or less.

FIG. 15 shows that Pt--Mn--X '(X' = M
o) A graph showing the relationship between the concentration of the element X ′ (X ′ = Mo) in the alloy film and the magnitude of the exchange coupling magnetic field generated at the interface between the antiferromagnetic layer and the pinned magnetic layer due to the heat treatment. As shown in FIG. 15, the element X ′ (X ′ = Mo) in the film was obtained regardless of the composition ratio of Pt and Mn being 6: 4, 1: 1, or 4: 6. It can be seen that when the amount becomes about 3 at% or more, the exchange coupling magnetic field gradually decreases. In particular, the amount of element X '(X' = Mo) in the film is about 10
If the ratio is at% or more, the exchange coupling magnetic field becomes extremely small, even when the composition ratio of Pt and Mn is 1: 1.

By the way, the content of the element X ′ (X ′ = Mo) is appropriate, but at least the element X ′ (X ′ = Mo)
Mo) is not contained, that is, the element X '(X' =
Mo) It is preferable that the exchange coupling magnetic field be larger than when the amount is 0 at%.

When the composition ratio of Pt: Mn is 6: 4, if the amount of element X ′ (X ′ = Mo) is about 1 at% or less, the amount of element X ′ (X ′ = Mo) Is 0 at%, the exchange coupling magnetic field becomes larger.

When the composition ratio of Pt: Mn is 1:
In the case of 1, the amount of the element X ′ (X ′ = Mo) is about 7 at%.
If it is less than or equal to, the exchange coupling magnetic field becomes larger than when the amount of the element X ′ (X ′ = Mo) is 0 at%.

Further, the ratio of the composition ratio of Pt: Mn is
In the case of 4: 6, the amount of element X '(X' = Mo) is about 10
At% or less, the element X '(X' = Mo) content is 0a.
The exchange coupling magnetic field is larger than at t%.

Next, the lower limit of the suitable content of the element X ′ (X ′ = Mo) is as follows.
In the case of 6: 4, the amount of the element X ′ (X ′ = Mo) is about 0.5
When it is at%, the exchange coupling magnetic field becomes the largest,
Therefore, in the present invention, the amount of the element X ′ (X ′ = Mo) is set to 0.
0.2 at% smaller than 5 at% was set as the lower limit.

From the above experimental results, the present invention shows that the element X '
The preferred range of the composition ratio was 0.2 to 10 at%. A more preferable range is 0.5 to 5 in at%.

The preferred composition range of the element X 'is the case where Pt (= element X) and Mn are set within the range of 4: 6 to 6: 4.

[0204]

According to the present invention described in detail above, in an exchange coupling film comprising an antiferromagnetic layer and a ferromagnetic layer, the antiferromagnetic layer is made of X-Mn (where X is Pt, Pd, Ir). , R
h, Ru, or Os), the composition ratio of the antiferromagnetic layer is appropriately adjusted so that the antiferromagnetic layer and the ferromagnetic layer ( For example, N
Since the interface structure with the (iFe alloy) is in a mismatched state, it is possible to obtain a larger exchange anisotropic magnetic field.

Alternatively, in the present invention, the element X '(where X' is Ne, Ar, Kr, Xe, Be, B, C, N,
Mg, Al, Si, P, Ti, V, Cr, Fe, Co,
Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, A
g, Cd, Ir, Sn, Hf, Ta, W, Re, Au,
Pb and one or more of the rare earth elements) are interstitially or substitutionally dissolved in the X—Mn alloy film to form the antiferromagnetic layer and the ferromagnetic layer. (For example, a NiFe alloy), the interface structure can be made in a non-matching state, and a larger exchange anisotropic magnetic field can be obtained.

[0206] Further, in the step of heat-treated, at least a part of the crystal structure of the antiferromagnetic layer, has a L1 ₀ type of face-centered tetragonal lattice (ordered lattice), yet the antiferromagnetic layer The ratio c / a of the lattice constants a and c is 0.93 to
It is preferable that the ratio be in the range of 0.99 because a larger exchange anisotropic magnetic field can be obtained.

Further, it is preferable that the crystal orientation of the antiferromagnetic layer and that of the ferromagnetic layer at the interface be different from each other, since the interface structure is easily brought into a non-matching state.

As described above, by applying the exchange coupling film in which the interface structure is in a non-matching state to the magnetoresistive element, the rate of change in resistance of the magnetoresistive element layer can be increased, and the reproduction characteristics can be improved. Can be improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a structure of a single spin-valve thin film element according to a first embodiment of the present invention, viewed from the ABS side;

FIG. 2 is a cross-sectional view of the structure of a single spin-valve thin film element according to a second embodiment of the present invention, viewed from the ABS side;

FIG. 3 is a sectional view of the structure of a dual spin-valve thin film element according to a third embodiment of the present invention, as viewed from the ABS side;

FIG. 4 is a cross-sectional view of the structure of an AMR type thin film element according to a fourth embodiment of the present invention as viewed from the ABS side.

FIG. 5 is a cross-sectional view of the thin-film magnetic head according to the present invention as viewed from a surface facing a recording medium;

FIG. 6 is a graph showing the relationship between the amount of Pt before heat treatment and the lattice constant of the antiferromagnetic layer when the antiferromagnetic layer is formed of PtMn.

FIG. 7 is a graph showing the relationship between the amount of Pt and the exchange anisotropic magnetic field when the antiferromagnetic layer is formed of PtMn.

FIG. 8 is a high-resolution TEM of the multilayer film of the embodiment shown in Table 1.
Photo,

FIG. 9 is a high-resolution TEM of a multilayer film of a comparative example shown in Table 1.
Photo,

FIG. 10 shows PtM in the multilayer film of the example shown in Table 1.
a graph showing the degree of ordering of n (antiferromagnetic layer),

FIG. 11 shows PtM in the multilayer film of the example shown in Table 1.
a graph showing the degree of ordering of n (antiferromagnetic layer),

FIG. 12 shows that the antiferromagnetic layer is formed of Pt—Mn—X ′ (X ′ = A
r) a graph showing the relationship between the amount of element X '(X' = Ar) and the lattice constant of the antiferromagnetic layer when formed in r);

FIG. 13 shows that the antiferromagnetic layer is formed of Pt—Mn—X ′ (X ′ = A
a graph showing the relationship between the amount of element X ′ (X ′ = Ar) and the exchange coupling magnetic field when formed in r);

FIG. 14 shows that the antiferromagnetic layer is formed of Pt—Mn—X ′ (X ′ = M
a graph showing the relationship between the amount of element X ′ (X ′ = Mo) and the lattice constant of the antiferromagnetic layer when formed in o),

FIG. 15 shows that the antiferromagnetic layer is formed of Pt—Mn—X ′ (X ′ = M
a graph showing the relationship between the amount of the element X ′ (X ′ = Mo) and the exchange coupling magnetic field when formed in o);

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 free magnetic layer 2 nonmagnetic conductive layer 3 fixed magnetic layer 4 antiferromagnetic layer 5 hard bias layer 6 underlayer 7 protective layer 8 conductive layer 9 exchange bias layer 10 soft magnetic layer (SAL layer) 11 nonmagnetic layer (SHUNT layer) 12) magnetoresistive layer (MR layer) 20 lower shield layer 21 lower gap layer 22 magnetoresistive element layer 23 upper gap layer 24 upper shield layer

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yutaka Yamamoto 1-7 Yukitani Otsukacho, Ota-ku, Tokyo Alps Electric Co., Ltd. (72) Inventor Akihiro Makino 1-7 Yukitani Otsukacho, Ota-ku, Tokyo Al (56) References JP-A-10-284321 (JP, A) JP-A-9-148132 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 43 / 08 G11B 5/39

Claims (19)

(57) [Claims] 1. An antiferromagnetic layer, a fixed magnetic layer formed in contact with the antiferromagnetic layer and having a magnetization direction fixed by an exchange anisotropic magnetic field with the antiferromagnetic layer; A free magnetic layer formed with a non-magnetic layer interposed therebetween, and a bias layer for aligning the magnetization direction of the free magnetic layer in a direction crossing the magnetization direction of the fixed magnetic layer. At least element X (where X is P
at least one of t, Pd, Ir, Rh, Ru, and Os) and Mn. The antiferromagnetic layer and the fixed magnetic layer A magnetoresistive effect element, wherein an interface structure with the element is in a mismatched state. 2. A fixed magnetic layer having a fixed magnetization direction, and a free magnetic layer formed on the fixed magnetic layer with a non-magnetic layer interposed therebetween, and a track is provided above or below the free magnetic layer. Width direction
An antiferromagnetic layer is stacked at intervals of, and the magnetization direction of the free magnetic layer crosses the magnetization direction of the fixed magnetic layer due to the exchange anisotropic magnetic field at the interface between the antiferromagnetic layer and the free magnetic layer. And the antiferromagnetic layer includes at least an element X (where X is P
t, Pd, Ir, Rh, Ru, and Os) and an antiferromagnetic material containing Mn, and the antiferromagnetic layer and the free magnetic layer. A magnetoresistive effect element, wherein an interface structure with the element is in a mismatched state. 3. A non-magnetic layer laminated above and below a free magnetic layer, a fixed magnetic layer positioned above one non-magnetic layer and below another non-magnetic layer, and one of the fixed magnetic layers. An antiferromagnetic layer positioned above and below the other fixed magnetic layer to fix the magnetization direction of each fixed magnetic layer in a fixed direction by an exchange anisotropic magnetic field; A bias layer aligned in a direction crossing the magnetization direction of the pinned magnetic layer, and at least one of the antiferromagnetic layers has at least an element X
(Where X is one or more of Pt, Pd, Ir, Rh, Ru, and Os) and Mn
Wherein the interface structure between the antiferromagnetic layer and the pinned magnetic layer is in a non-matching state. 4. and a nonmagnetic layer magnetoresistive layer superimposed through the soft magnetic layer, said antiferromagnetic layer is superimposed on the upper side of the magnetoresistive layer, the magnetization direction of the magnetoresistive layer The antiferromagnetic layer is made of at least an element X (where X is P
at least one of t, Pd, Ir, Rh, Ru, and Os) and Mn. The antiferromagnetic layer and the magnetoresistive layer A magnetoresistive effect element, wherein an interface structure with the element is in a mismatched state. Wherein said anti least part of the crystal structure of the ferromagnetic layer, L1 ₀ type magnetoresistive element according to any one of 4 claims 1 becomes face centered cubic ordered lattice. 6. The crystal orientation of the antiferromagnetic layer and the ferromagnetic layer at the interface between the antiferromagnetic layer and the ferromagnetic layer serving as the pinned magnetic layer, the free magnetic layer, or the magnetoresistive layer is different. The magnetoresistive element according to any one of claims 1 to 5. 7. The {111} plane of the ferromagnetic layer is preferentially oriented in a direction parallel to the interface with the antiferromagnetic layer, whereas the degree of orientation of the {111} plane of the antiferromagnetic layer is 7. The magnetoresistive element according to claim 6, wherein the degree of orientation of the ferromagnetic layer is smaller than that of the ferromagnetic layer. 8. The {111} plane of the antiferromagnetic layer is preferentially oriented in a direction parallel to the interface with the ferromagnetic layer, whereas the degree of orientation of the {111} plane of the ferromagnetic layer is: 7. The magnetoresistive element according to claim 6, wherein the degree of orientation of the antiferromagnetic layer is smaller than that of the antiferromagnetic layer or non-oriented. 9. The orientation of the {111} plane of the antiferromagnetic layer and the orientation of the {111} plane of the ferromagnetic layer in a direction parallel to the interface between the antiferromagnetic layer and the ferromagnetic layer. Both the degrees are small or non-oriented, and the crystal planes other than the {111} plane are preferentially oriented in a direction parallel to the interface, and the crystal orientations of the antiferromagnetic layer and the ferromagnetic layer are changed. 7. The magnetoresistive element according to claim 6, which is different. 10. The magnetoresistive element according to claim 1, wherein the element X in the X—Mn alloy serving as the antiferromagnetic layer is Pt. 11. The ratio c / a of the lattice constants a and c of the antiferromagnetic layer is in the range of 0.93 to 0.99.
0. A magnetoresistive element according to item 0. 12. The antiferromagnetic layer is made of an X—Mn—X ′ alloy (where X is Pt, Pd, Ir, Rh, Ru, Os
Any one or two or more elements der of is, the
Element X 'is Ne, Ar, Kr, Xe, Be, B, C,
N, Mg, Al, Si, P, Ti, V, Cr, Fe, C
o, Ni, Cu, Zn, Ga, Ge, Zr, Nb, M
o, Ag, Cd, Ir, Sn, Hf, Ta, W, Re,
One or more of Au, Pb, and rare earth elements
The X-Mn-X 'alloy is an interstitial solid solution in which the element X' has penetrated into the gaps of the spatial lattice formed by the elements X and Mn, or
10. A substitution type solid solution in which a part of lattice points of a crystal lattice composed of and Mn is substituted by an element X '.
The magnetoresistance effect element according to any one of the above. 13. X—Mn—X ′ serving as the antiferromagnetic layer
The magnetoresistive element according to claim 12, wherein the element X of the alloy is Pt. 14. The element X ′ is Ne, Ar, Kr,
Claim is one or more elements of xe 12
Or a magnetoresistance effect element according to item 13 . 15. The composition ratio of the element X ′ is at%,
15. The magnetoresistive element according to claim 12, wherein the value is in the range of 0.2 to 10 . 16. The composition ratio of the element X ′ is at%,
The magnetoresistance effect element according to claim 15 , wherein the value is in the range of 0.5 to 5. 17. A composition ratio X: M of an element X and Mn.
n is within the range of 4: 6 to 6: 4.
17. The magnetoresistive element according to any one of items 16 . 18. X- used as the antiferromagnetic layer
Mn-X 'alloy to a magnetoresistive element according to any one of claims 12 to 17 is formed by sputtering. 19. The method of claim 1 to 18 thin-film magnetic head is characterized in that the shield layer with the gap layer and below the magnetoresistive element described is formed on either.