JP3037823U - Sputtering device with two longitudinally extending magnetrons - Google Patents

Abstract

(57) [PROBLEMS] To provide a sputtering apparatus capable of extending the life of a target and sufficiently utilizing the material thereof. SOLUTION: Two magnetrons 1 which are arranged next to each other and extend in the longitudinal direction each having one target 12 on the upper side are provided, and an external magnet 7 is provided below the target 12.
There is a U-shaped basic body 2 with a confined magnet consisting of a magnet and an internal magnet 8 with a positive voltage applied between ground and one target and a negative voltage applied between ground and the other target. as partial discharge resistance R _Ei point targets on the guide wire 15 is the same size as the partial discharge resistance R _Ei other point targets guide line 15, a discharge of the magnetron 1 along the guide line 15 The resistance R _E is made uniform.

Description

[Detailed description of the invention]

[0001]

[Technical field to which the invention belongs]

 This invention has two U-shaped magnetrons arranged side by side and each having one target on the upper side and having a confined magnet consisting of an outer magnet and an inner magnet under the target. A sputtering apparatus in which there is a basic body, and a positive voltage is applied between the ground and one target and a negative voltage is applied between the ground and the other target.

[0002]

[Prior art]

 Sputtering devices using such longitudinally extending magnetrons arranged next to each other are well known. In these devices, the target is integrally formed or is composed of a large number of member pieces. In that case, the latter embodiment is more advantageous.

In sputtering, a substance is released from a target, and this substance adheres to a material to be coated in a sputtering device. This sputtering process does not uniformly remove material from the target, but rather creates so-called corrosion grooves. The straight line at the deepest point of this corrosion groove is called the rough line. A target is considered depleted if the erosion trench is deep enough that the material thickness is below a certain threshold only at certain locations of the target. For this reason, the corrosion groove is formed as wide as possible to ensure a uniform depth.

However, in the above-described sputtering apparatus having two magnetrons extending in the longitudinal direction, the corrosion groove may be significantly deeper than the other areas at each end of the target. Due to this deep corrosion, the target wears out even faster. The structure of this type of magnetron with an outer magnet and an inner magnet creates a ring-shaped magnetic field, which extends in the longitudinal direction.

The target voltages of both magnetrons have different polarities. That is, at a certain point in time, a positive voltage with respect to the ground is applied to one target, and a negative voltage with respect to the ground is applied to the other target. These target voltage and ring-shaped magnetic field induce a ring-shaped electron flow in the target. At the next time both voltages will switch polarity. The direction of electron flow in the target is determined by the polarity of the magnet arrangement.

It is known that the deeper pits of the corrosion ditch exactly coincide with the ends of the magnetron, where the electron flow is directed to the other magnetron, respectively.

[0007]

[Problems to be solved by the device]

 An object of this invention is to improve the availability of target materials in a sputtering apparatus having magnetrons arranged next to each other.

[0008]

[Means for Solving the Problems]

According to the present invention, the above-mentioned problems are provided with two magnetrons 1 which are arranged side by side and each have one target 12 on the upper side and which extend in the longitudinal direction, and an external magnet 7 and an internal magnet 8 are provided below the target 12. There is a U-shaped basic body 2 with a confined magnet consisting of, in a sputtering device in which a positive voltage is applied between the ground and one target and a negative voltage is applied between the ground and the other target. Then, the magnetron 1 along the guide line 15 is arranged so that the partial discharge resistance R _{Ei at} the target point on the proposal line 15 becomes the same as the partial discharge resistance R _{Ei at} the other point on the guide line 15. This is solved by making the discharge resistance R _E of the electrodes uniform.

Other advantageous configurations according to the invention are mentioned in the dependent claims of the utility model registration claim.

[0010]

[Embodiment of the invention]

 In the sputtering device according to the present invention, the discharge resistance of all magnetrons is determined by the quotient of the target voltage with respect to the target current. Since the distribution of targets is planar, this discharge resistance is also distributed to all targets. As a result, the discharge resistance is substantially given by the sum of many partial discharge resistances.

Uniformizing the discharge resistance along the guide wire significantly reduces the depression of the corrosion groove at the end where the electron flow respectively goes to the other magnetron. In a special configuration of the invention, a separating wall of soft magnetic material is arranged between both magnetrons. Such an arrangement of the separating wall significantly reduces the influence of the magnetic field of the adjacent magnetron. Therefore, the magnetic field in one magnetron is almost equal on both sides. By adjusting the magnetic field in this way, it is possible to obtain a uniform discharge resistance.

In another preferred configuration of the invention, a shunt known per se, ie a single layer of soft magnetic material, is mounted between the outer and inner magnets. In this case, the shunt on the side close to the other magnetron has a larger width than the shunt on the opposite side of the other magnetron. Even in this case, since the magnetic fields on both sides of one magnetron are almost equal, the mutual influence of both magnetrons is significantly reduced. Therefore, uniform discharge resistance is also achieved.

Providing a separating wall or shunts of different widths is particularly effective. Therefore, a particularly rational configuration is characterized by the features of claims 2 and 3.

[0014]

【Example】

 Hereinafter, the present invention will be described in more detail based on embodiments. The sputtering apparatus according to the present invention is composed of two magnetrons 1 which are arranged side by side and extend in the longitudinal direction. The magnetron 1 comprises a U-shaped base body 2, and the upper side of this basic body is closed by a cooling plate 3. The basic body 2 encloses the magnetic core element 4. Each of these magnetic core elements 4 is composed of a basic member 5 placed horizontally and a supporting member 6 standing on the basic member 5. An outer magnet 7 and an inner magnet 8 are arranged on the upper side of the support member 6. A hollow space 9 is formed by the basic member 5, the support member 6 and the cooling plate 3, and this space is used for containing a refrigerant that takes heat from the cooling plate 3.

A shunt 10 is arranged inside the cooling plate 3. These shunts 10 are soft magnetic single layers and are in the area of the magnetic field 11 between the outer magnet 7 and the inner magnet 8. This magnetic field is above the cooling plate 3 and also penetrates the target 12 fixed to this cooling plate 3. A target voltage is applied between the target 12 and the ground (not shown). A magnetic field 11 causes a flow of electrons 13 in the target 12. The direction of this flow depends on the magnetic poles of the magnets 7 and 8.

When the sputtering process is performed, the corrosion groove 14 is formed in the target 12. A guide line 15 connects the deepest points of the corrosion groove 14. The shunt 10 on the side of one magnetron 1 facing the other magnetron 1 is made wider than the shunt on the opposite side of the magnetron 1, and a separating wall 16 of soft magnetic material mounted between the two magnetrons 1 is provided. Thereby, the mutual influence of the magnetic fields 11 is minimized, and the discharge resistance along the guide line 15 is made uniform. The discharge provided R _E is

[0017]

[Outside 1]

Is given by Here, R _Ei is a partial discharge resistance at one point on the target. R _E itself is

[0019]

[Outside 2]

Is calculated as Where U _T is the target voltage and I _E is the discharge current. From these relational expressions, if the discharge resistance R _E is made uniform along the guide line 15, the partial discharge resistance R _Ei at each point of the target on the guide line becomes the part of the other point of the target 12 on the guide line 15. It is meant to have the same value as the discharge resistance R _Ei . By making the discharge resistance R _E uniform, a dangerous target area 17, that is, the corrosion groove 14 in the area where the electron flow 13 of one magnetron 1 goes to the adjacent magnetron 1 is formed so as not to become deeper than the remaining target area. . By making the depth of the corrosion groove 14 uniform, the target can be sufficiently utilized as compared with the conventional technique in which the depression of the corrosion groove 14 may occur in the dangerous target region 17.

[0021]

[Effect of the invention]

 As described above, the sputtering apparatus of the present invention can prolong the life of the target and make full use of its material.

[Brief description of the drawings]

1 is a plan view of a sputtering apparatus according to the present invention,

FIG. 2 is a sectional view of a sputtering device according to the present invention,

FIG. 3 is a principle diagram showing the shapes of magnetic field lines and electron flow.

[Explanation of symbols]

1 magnetron 2 basic body 3 cooling plate 4 magnetic core element 5 basic member 6 support member 7 external magnet 8 internal magnet 9 hollow space 10 shunt 11 magnetic field 12 target 13 electron flow 14 corrosion groove 15 guide line 16 separation wall 17 dangerous target area R _E discharge resistor R _Ei partial discharge resistance U _T target voltage I _E discharge current

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[Procedure amendment]

[Submission date] December 2, 1996

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims for utility model registration

[Correction method] Change

[Correction contents]

[Utility model registration claims]

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Wolfgang Erbkamm, Federal Republic of Germany, 01257 Dresden, Hennigsdorfer Strasse, 5 (72) Inventor Schitanrei Lane, Federal Republic of Germany, 01099 Dresden, Am Egel Parc, 53

Claims (4)

[Utility model registration claims] 1. A U-shaped magnet having two magnetrons arranged adjacent to each other and each having one target on the upper side and extending longitudinally, and having a confined magnet consisting of an outer magnet and an inner magnet under the target. In a sputtering device in which there is a basic body, a positive voltage is applied between the ground and one target, and a negative voltage is applied between the ground and the other target, the portion of the target point on the guide line (15) discharge resistor (R _Ei) is to be the same size as the partial discharge resistance of the other points of the target guide wire (15) (R _Ei), a discharge resistance of the magnetron (1) along a guide line (15) A sputtering apparatus having a uniform ( _RE ). 2. Sputtering device according to claim 1, characterized in that a separating wall (16) made of a soft magnetic material is arranged between both magnetrons (1). 3. A shunt (10), which is a single layer of soft magnetic material, is inserted between the outer magnet and the inner magnet, and the shunt (10) near the other magnetron (1) is the other. Shunt (1) on the side opposite to the magnetron (1)
The sputtering apparatus according to claim 1, which has a wider width than that of 0). 4. A device according to claim 1, characterized by claims 2 and 3.