JP3034420B2 - Background correction method for X-ray fluorescence analysis - Google Patents
Background correction method for X-ray fluorescence analysisInfo
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- JP3034420B2 JP3034420B2 JP6047763A JP4776394A JP3034420B2 JP 3034420 B2 JP3034420 B2 JP 3034420B2 JP 6047763 A JP6047763 A JP 6047763A JP 4776394 A JP4776394 A JP 4776394A JP 3034420 B2 JP3034420 B2 JP 3034420B2
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- rays
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Description
【０００１】[0001]
【産業上の利用分野】この発明は、蛍光Ｘ線分析におい
て、試料からのＸ線を回折する分光素子に含まれた元素
に起因する誤差分を補正するバックグランド補正法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a background correction method for correcting an error caused by an element contained in a spectroscopic element for diffracting X-rays from a sample in X-ray fluorescence analysis.
【０００２】[0002]
【従来の技術】従来の、蛍光Ｘ線分析法として、図４に
示すものがある。同図において、Ｘ線管１からの一次Ｘ
線Ｘ１を試料２に照射し、この試料２で発生する蛍光Ｘ
線Ｘ２を分光素子３で回折させ、この分光素子３からの
回折Ｘ線Ｘ３を検出器４に入射させ、この検出器４でＸ
線強度を測定する。そして、濃度算出式を用いて、上記
強度から試料２に含まれた測定対象元素の濃度を算出す
る。なお、同図において、５，５はＸ線を平行光にする
ためのソーラースリットである。なお、図４に示した上
記技術以外に分光素子３として弯曲分光素子を使用し、
ソーラースリット５に代えて単孔の光集中用のスリット
を使用した集中法がある。2. Description of the Related Art FIG. 4 shows a conventional X-ray fluorescence analysis method. In the figure, the primary X from the X-ray tube 1
The sample 2 is irradiated with the X-ray X1, and the fluorescent X
The beam X2 is diffracted by the spectroscopic element 3, and the diffracted X-ray X3 from the spectroscopic element 3 is made incident on the detector 4, and the detector 4
Measure the line intensity. Then, the concentration of the element to be measured contained in the sample 2 is calculated from the intensity using the concentration calculation formula. In the figure, reference numerals 5 and 5 denote solar slits for converting X-rays into parallel light. In addition to the above technique shown in FIG. 4, a curved spectral element is used as the spectral element 3,
There is a concentration method using a single hole light concentration slit instead of the solar slit 5.
【０００３】上記検出器４で測定される強度には、各種
の散乱Ｘ線がバックグランド成分として含まれるため、
上記濃度算出式においてバックグランド補正を行う必要
がある。Since the intensity measured by the detector 4 includes various scattered X-rays as a background component,
It is necessary to perform background correction in the above density calculation formula.
【０００４】そこで、従来では、蛍光Ｘ線ピーク付近の
散乱Ｘ線を測定し、そのピークトップのＸ線強度から散
乱Ｘ線強度を差し引く方法でバックグランド補正を行っ
ている。図６は、上記分光素子３として、２ｄ（ｄは結
晶面間隔）＝１６０オングストロームのＭｏ／Ｂ4 Ｃか
らなる人工累積膜を使用した場合のＢ−Ｋα曲線を示し
ている。なお、同図は、別の説明に使用するものである
ため、詳細については後で説明する。そして、上記曲線
において、ピークトップのＸ線強度から、このピークト
ップの両側裾野部分ａ，ｂに現れる散乱Ｘ線の強度をバ
ックグランド値ＢＧとして差し引くことにより、バック
グランド補正を行っている。Therefore, conventionally, background X-rays are corrected by measuring the scattered X-rays near the fluorescent X-ray peak and subtracting the scattered X-ray intensity from the X-ray intensity at the peak top. FIG. 6 shows a B-Kα curve in the case where an artificial cumulative film made of Mo / B 4 C with 2d (d is the crystal plane interval) = 160 Å is used as the spectral element 3. This figure is used for another explanation, and the details will be described later. Then, in the above curve, the background correction is performed by subtracting the intensity of the scattered X-rays appearing at the tail portions a and b of the peak top from the X-ray intensity at the peak top as a background value BG.
【０００５】[0005]
【発明が解決しようとする課題】ところで、半導体のウ
ェハーや磁気ディスクなどの表層部に含まれるボロン
（Ｂ）や炭素（Ｃ）などの超軽元素を分析する場合に
は、これら超軽元素からなる測定対象元素の蛍光Ｘ線の
エネルギーが小さいことから、分光素子におけるエネル
ギーの吸収を少なくする必要がある。そこで、蛍光Ｘ線
の吸収を少なくするため、上記分光素子３として、その
構成膜に上記測定対象元素と同一元素を用いた人工累積
膜が使用される。By the way, when analyzing ultra-light elements such as boron (B) and carbon (C) contained in a surface layer portion of a semiconductor wafer, a magnetic disk or the like, these ultra-light elements must be analyzed. Since the energy of the fluorescent X-ray of the element to be measured is small, it is necessary to reduce the energy absorption in the spectroscopic element. Therefore, in order to reduce the absorption of the fluorescent X-ray, an artificial cumulative film using the same element as the element to be measured is used as the constituent film of the spectral element 3.
【０００６】しかし、上記超軽元素を分析するに際し
て、以上のバックグランド補正を行っても、正確な濃度
測定はできなかった。つまり、たとえばＢＰＳＧ／Ｓｉ
ウェハー（Ｓｉ基板上にＢ2 Ｏ3 ・Ｐ2 Ｏ5 ・ＳｉＯ2
のガラス状混合物からなる表層部（ＢＰＳＧ膜）が形成
されたもの）について膜厚・組成分析する場合には、Ｂ
−Ｋαの分光素子３として、図５に示すように、多数の
反射層Ｍｏをスペーサ層Ｂ4 Ｃを介して積層してなる人
工累積膜が使用される。[0006] However, even when the above background correction is performed when analyzing the ultra-light element, accurate concentration measurement cannot be performed. That is, for example, BPSG / Si
Wafer (B 2 O 3 · P 2 O 5 · SiO 2 on Si substrate
When the film thickness and composition of the surface layer (BPSG film) made of the glassy mixture of
As shown in FIG. 5, an artificial cumulative film formed by laminating a large number of reflective layers Mo via a spacer layer B 4 C is used as the −Kα spectral element 3.
【０００７】ところで、上記分光素子３に試料２から上
記蛍光Ｘ線Ｘ２を含むＸ線ＸＯが入射されると、この入
射Ｘ線ＸＯにより上記分光素子３のＢ4 Ｃ層中のボロン
Ｂが励起されて、蛍光Ｘ線Ｂ−Ｋαが全方向に向けて発
生する。一方、上記試料２からの入射Ｘ線ＸＯは、上記
分光素子３に入射して、その入射角度θに対応する波長
を持った蛍光Ｘ線Ｘ２のみがＭｏ層で回折され、角度θ
の回折Ｘ線Ｘ３が上記検出器４に入射される。このた
め、上記回折Ｘ線Ｘ３と、上記ボロンＢの励起により発
生した蛍光Ｘ線のうち、上記角度θで出射されるものＸ
４とが、それぞれ上記検出器４に入射される。When an X-ray XO including the fluorescent X-ray X2 is incident on the spectral element 3 from the sample 2, boron B in the B 4 C layer of the spectral element 3 is excited by the incident X-ray XO. Then, the fluorescent X-rays B-Kα are generated in all directions. On the other hand, the incident X-ray XO from the sample 2 is incident on the spectral element 3, and only the fluorescent X-ray X2 having a wavelength corresponding to the incident angle θ is diffracted by the Mo layer, and the angle θ
Is incident on the detector 4. Therefore, of the diffracted X-rays X3 and the fluorescent X-rays generated by the excitation of the boron B, those that are emitted at the angle θ
4 enter the detector 4 respectively.
【０００８】従って、上記検出器４で検出されるＸ線強
度は、上記試料２からの蛍光Ｘ線に基づく回折Ｘ線Ｘ３
だけではなく、上記分光素子３のボロンＢの励起による
ものＸ４も含むことになり、正確な強度測定はできな
い。Accordingly, the intensity of the X-rays detected by the detector 4 is equal to the diffraction X-ray X3 based on the fluorescent X-rays from the sample 2.
Not only that, but also X4 due to the excitation of boron B of the spectroscopic element 3 is included, and accurate intensity measurement cannot be performed.
【０００９】図６は、上述したＭｏ／Ｂ4 Ｃからなる人
工累積膜からなる分光素子３を使用した場合で、縦軸に
検出器４で検出されたＸ線強度を、また、横軸に波長に
対応する回折角θを２倍した２θ（ｄｅｇ）をとって、
軽元素からなるＮａＦとＬｉＦの分析曲線を、Ｂの分析
曲線と共に示している。ＮａＦとＬｉＦの各曲線におい
ては、Ｂが含まれていないにもかかわらず、上記Ｂ−Ｋ
α曲線のピーク対応箇所に山ｄ，ｅが現れている。他
方、図７は、上記分光素子３として、ボロン元素を含ま
ないＮｉ／Ｃからなる人工累積膜を使用した場合のＮａ
ＦとＬｉＦの分析曲線を示している。図７の各分析曲線
には、上記ボロン元素を含む分光素子を使用した場合の
ようにＢ−Ｋα曲線のピーク対応箇所に山が現れない。
このことから、分光素子３に含まれたボロンの励起によ
る蛍光Ｘ線が、分析曲線に影響を与えていることが理解
される。FIG. 6 shows a case where the spectroscopic element 3 composed of the above-mentioned artificially accumulated film made of Mo / B 4 C is used. The vertical axis represents the X-ray intensity detected by the detector 4, and the horizontal axis represents the X-ray intensity. Taking 2θ (deg), which is twice the diffraction angle θ corresponding to the wavelength,
The analysis curves of NaF and LiF composed of light elements are shown together with the analysis curve of B. In each of the curves of NaF and LiF, B-K
The peaks d and e appear at the positions corresponding to the peaks of the α curve. On the other hand, FIG. 7 shows the Na in the case where an artificial cumulative film made of Ni / C containing no boron element is used as the spectral element 3.
The analysis curve of F and LiF is shown. In each analysis curve of FIG. 7, a peak does not appear at a position corresponding to the peak of the B-Kα curve as in the case of using the above-described spectral element containing a boron element.
From this, it is understood that the fluorescent X-rays due to the excitation of boron contained in the spectroscopic element 3 affect the analysis curve.
【００１０】従って、Ｂ−Ｋα線にも上記ボロンの励起
による影響が含まれるから、この影響を含まない上記両
側裾野部分ａ，ｂに現れる散乱Ｘ線の強度をバックグラ
ンド値ＢＧとして差し引いても、正確な測定はできなか
った。Accordingly, since the B-Kα ray also includes the influence of the excitation of boron, the intensity of the scattered X-rays appearing in the tail portions a and b that do not include this influence can be subtracted as the background value BG. , Accurate measurements could not be made.
【００１１】なお、図６および図７においては、それぞ
れ同一のＮａＦおよびＬｉＦの分析結果を示し、図７の
各分析曲線には、図６に示すもののように多くのピーク
トップが発生することなく、なだらかな右下がりの傾斜
勾配となっているが、これは使用する分光素子３の膜組
成が異なり、その蛍光Ｘ線の吸収率が異なることに起因
する。FIGS. 6 and 7 show the same analysis results of NaF and LiF, respectively, and each analysis curve of FIG. 7 does not have many peak tops as shown in FIG. , Which is caused by a difference in the film composition of the spectral element 3 used and a difference in the absorptance of the fluorescent X-rays.
【００１２】この発明の目的は、分光素子で発生するＸ
線による分析誤差を少なくして、たとえ超軽元素でも正
確に分析することができるバックグランド補正法を提供
することにある。An object of the present invention is to provide an X-ray generator that generates X-rays.
An object of the present invention is to provide a background correction method capable of accurately analyzing even ultra-light elements by reducing analysis errors due to lines.
【００１３】[0013]
【課題を解決するための手段】上記目的を達成するた
め、この発明のバックグランド補正法では、濃度算出式
が、試料に含まれた測定対象元素からの蛍光Ｘ線強度に
比例した項と、上記分光素子に入射する外乱Ｘ線の強度
に比例した項であって、この外乱Ｘ線によって上記分光
素子に含まれた上記測定対象元素と同一の元素が励起さ
れて、上記測定対象元素からの蛍光Ｘ線が上記分光素子
で回折される回折角と同一角度で分光素子から出射する
蛍光Ｘ線の強度を示す項と、定数項とからなることを特
徴としている。In order to achieve the above object, in the background correction method of the present invention, the expression for calculating the concentration includes a term proportional to the intensity of the fluorescent X-ray from the element to be measured contained in the sample; The intensity of disturbance X-rays incident on the spectroscopic element
This is a term proportional to
The same element as the element to be measured contained in the element is excited.
X-ray fluorescence from the element to be measured is
Exits the spectroscopic element at the same angle as the diffraction angle diffracted by
It is characterized by comprising a term indicating the intensity of fluorescent X-rays and a constant term.
【００１４】[0014]
【作用】上記濃度算出式を用いることにより、外乱Ｘ線
によって分光素子に含まれた測定対象元素と同一の元素
が励起されて生じる蛍光Ｘ線の強度を、誤差分として補
正できる。従って、ウェハーや磁気ディスクなどの表層
部に含まれるボロンや炭素などの超軽元素を含む分光素
子を使用しても、正確に元素の分析が可能となる。The disturbance X-ray can be obtained by using the above formula for calculating the concentration.
Same elemental and measured element included in the spectral element by
There the intensity of the fluorescent X-ray generated is excited, it can be corrected as an error component. Therefore, even if a spectroscopic element containing a superlight element such as boron or carbon contained in a surface layer portion of a wafer, a magnetic disk or the like is used, the element can be accurately analyzed.
【００１５】[0015]
【実施例】先ず、上述したＢＰＳＧ／Ｓｉウェハーを試
料として、この試料に含まれるボロンの含有率について
検量線、つまり、組成（元素の種類とその濃度）が既知
の試料の濃度−Ｘ線強度の相関曲線を引いて見たとこ
ろ、図１のようになった。この図は、横軸にＢ2 Ｏ3 の
濃度を、縦軸にＢ−Ｋα線強度をとり、組成が同一のＢ
ＰＳＧ膜の厚さを、３０００，６０００，９０００オン
グストロームに設定した場合の各検量線を示している。
同図で明らかなように、膜厚が厚いものほど一次Ｘ線の
吸収が大となるため、試料から発生するＢ−Ｋα線が弱
くなり、また、薄いものほどＢ−Ｋα線が強くなる。First, a calibration curve for the content of boron contained in the BPSG / Si wafer described above as a sample, that is, the concentration-X-ray intensity of a sample whose composition (the type of element and its concentration) is known. As a result of drawing the correlation curve of FIG. In this figure, the horizontal axis represents the concentration of B 2 O 3 and the vertical axis represents the B-Kα line intensity.
Each calibration curve is shown when the thickness of the PSG film is set to 3000, 6000, 9000 angstroms.
As is clear from the figure, since the absorption of primary X-rays increases as the film thickness increases, the B-Kα radiation generated from the sample decreases, and as the thickness decreases, the B-Kα radiation increases.
【００１６】また、膜厚９０００オングストロームの試
料を基準として、これとの見かけの濃度差を偏差ΔＢと
したとき、図２に示すように、縦軸に上記偏差ΔＢを、
横軸に膜厚をとって、上記偏差ΔＢの変化を調べたとこ
ろ、上記偏差ΔＢは膜厚が薄いほど大きく，厚いほど小
さくなり、このことは、分析曲線の裾野部分を差し引く
バックグランド補正を行っても同じ傾向となる。Assuming that a difference of ΔB is an apparent density difference from a sample having a thickness of 9000 angstroms as a reference, as shown in FIG.
When the change in the deviation ΔB was examined by plotting the film thickness on the horizontal axis, the deviation ΔB was larger as the film thickness was thinner and smaller as the film thickness was thicker. This means that the background correction for subtracting the tail of the analysis curve was performed. Even if you do, it will be the same tendency.
【００１７】さらに、図３に示すように、縦軸に上記偏
差ΔＢを、横軸に上記ウェハーの基板から発生するＳｉ
−Ｋα線の強度をとって、ΔＢの変化を調べたところ、
このＳｉ−Ｋα線の強度と偏差ΔＢは比例関係にある、
つまり、上記Ｓｉ−Ｋα線の強度が大きくなるほど偏差
ΔＢが大となり、また、上記Ｓｉ−Ｋα線の強度が小さ
くなるほど偏差ΔＢが小となることが分かった。このこ
とは、上記試料のＳｉ基板からのＳｉ−Ｋα線が強いほ
ど、上記分光素子（Ｍｏ・Ｂ4 Ｃ）に含まれるボロンが
強く励起されることに起因すると考えられる。特に、上
記試料中のＳｉ層（基板）は、その上のＢＰＳＧ膜に較
べてはるかに厚いため、このＳｉ層から強いＳｉ−Ｋα
線が発生し、このＳｉ−Ｋα線がボロンを強く励起する
ことが主要な誤差発生原因になると推定される。Further, as shown in FIG. 3, the vertical axis represents the deviation ΔB, and the horizontal axis represents Si generated from the substrate of the wafer.
When the change of ΔB was examined by taking the intensity of −Kα ray,
The intensity of the Si-Kα ray and the deviation ΔB are in a proportional relationship.
That is, it has been found that the deviation ΔB increases as the intensity of the Si-Kα line increases, and the deviation ΔB decreases as the intensity of the Si-Kα line decreases. This is considered to be due to the fact that the stronger the Si-Kα ray from the Si substrate of the sample, the stronger the boron contained in the spectroscopic element (Mo · B 4 C) is excited. In particular, since the Si layer (substrate) in the above sample is much thicker than the BPSG film thereon, strong Si-Kα
A line is generated, and it is estimated that the strong excitation of boron by the Si-Kα line causes a major error.
【００１８】ここでは、分光素子３に入射するＸ線のう
ち、測定対象元素（ボロン）からの蛍光Ｘ線（Ｂ−Ｋα
線）を除くＸ線を外乱Ｘ線と呼ぶ。この外乱Ｘ線のう
ち、分光素子３に含まれたボロンを励起するＸ線として
は、上記Ｓｉ−Ｋα線以外に、試料２からの１次Ｘ線Ｘ
１の反射線、コンプトン散乱線、ボロン以外の元素の蛍
光Ｘ線なども含まれるが、Ｓｉ−Ｋα線の強度が圧倒的
に大きいので、ここではＳｉ−Ｋα線を、ボロンを励起
させて偏差ΔＢを生じさせる外乱Ｘ線とみなして、他の
Ｘ線の影響を無視しても、補正精度はあまり低下しな
い。この外乱Ｘ線Ｓｉ−ＫαはＢ−Ｋαとは波長が異な
るので、Ｓｉ−Ｋα測定専用分光系を用いるか、また
は、分光素子３をＳｉ−Ｋα測定用分光素子に交換して
回折角度θをＳｉ−Ｋαの波長に合致させてその強度を
検出器４で測定する。Here, among the X-rays incident on the spectroscopic element 3, the fluorescent X-ray (B-Kα) from the element to be measured (boron) is used.
X-rays except for the X-ray are referred to as disturbance X-rays. Among the disturbance X-rays, the X-rays for exciting the boron contained in the spectroscopic element 3 include the primary X-rays X-ray
1 include reflected X-rays, Compton scattered X-rays, and fluorescent X-rays of elements other than boron. However, since the intensity of Si-Kα radiation is overwhelmingly large, the deviation of Si-Kα radiation by exciting boron Even if the influence of other X-rays is neglected assuming that the X-ray is a disturbance X-ray, the correction accuracy does not decrease much. Since this disturbance X-ray Si-Kα has a different wavelength from B-Kα, a spectral system dedicated to Si-Kα measurement is used, or the spectral element 3 is replaced with a spectral element for Si-Kα measurement to set the diffraction angle θ. The intensity is measured by the detector 4 in accordance with the wavelength of Si-Kα.
【００１９】図３から、上記試料に含まれるＢ2 Ｏ3 濃
度の偏差ΔＢは、次の一次式で表すことができる。 ΔＢ＝０．０１５９・Ｉsi-kα−９．９６ ……（１） ここで、Ｉsi-kαはＳｉ−Ｋα線の強度を表す。From FIG. 3, the deviation ΔB of the B 2 O 3 concentration contained in the sample can be expressed by the following linear equation. ΔB = 0.0159 · Isi-kα−9.96 (1) Here, Isi-kα represents the intensity of the Si-Kα ray.
【００２０】一方、Ｂの濃度Ｗは次式で表される。 Ｗ＝ｂ・ＩB -kα＋Ｃ１−ΔＢ ……（２） ここで、ｂは図１の検量線の勾配に相当し、Ｃ１は前述
した裾野部分の散乱Ｘ線強度ＢＧに相当する濃度であ
る。そして、上記式（１）を式（２）に代入し、下記の
ようなＢ2 Ｏ3 濃度Ｗの検量線式を求めて、これにより
バックグランド補正を行う。 Ｗ＝ｂ・ＩB-K α＋Ｃ−０．０１５９・Ｉsi-kα ……（３）On the other hand, the concentration W of B is expressed by the following equation. W = b · IB−kα + C1−ΔB (2) Here, b corresponds to the gradient of the calibration curve in FIG. 1, and C1 is the concentration corresponding to the scattered X-ray intensity BG in the foot portion described above. Then, the above equation (1) is substituted into the equation (2), and the following calibration curve equation of the B 2 O 3 concentration W is obtained, thereby performing the background correction. W = b · IB-K α + C−0.0159 · Isi-kα (3)
【００２１】上記式（３）において、ｂ・ＩB-Kαｂが
試料中の測定対象元素の蛍光Ｘ線に比例した項、Ｃが上
記式（１）に示す−９．９６とその他のバックグランド
補正値Ｃ１を含む定数項、０．０１５９・Ｉsi-kα が
試料から発生する外乱Ｘ線Ｉsi-kαの強度に比例した項
である。定数項Ｃの値は、例えば組成が既知の標準試料
について、Ｍｏ・Ｂ4 Ｃからなる分光素子を用いたＸ線
測定結果と、化学分析による濃度測定結果とを比較して
求めることができる。従来の検量線（式(2) ）と本発明
の検量線（式(3) ）とは、図１に示したように、ΔＢだ
けずれた関係となる。In the above formula (3), b · IB-Kαb is a term proportional to the fluorescent X-ray of the element to be measured in the sample, and C is −9.96 shown in the above formula (1) and other background correction. The constant term including the value C1, 0.0159 · Isi-kα, is a term proportional to the intensity of the disturbance X-ray Isi-kα generated from the sample. The value of the constant term C can be determined, for example, by comparing an X-ray measurement result using a spectroscopic element made of Mo.B 4 C with a concentration measurement result by chemical analysis for a standard sample having a known composition. The conventional calibration curve (Equation (2)) and the calibration curve (Equation (3)) of the present invention have a relationship shifted by ΔB as shown in FIG.
【００２２】そして、図１で示すように、上記補正検量
線式によってバックグランド補正を行うことにより、上
記ＢＰＳＧ／Ｓｉウェハーの膜厚・組成分析を行う場合
で、上記分光素子として人工累積膜（Ｍｏ・Ｂ4 Ｃ）を
用いるとき、また、試料の膜厚が異なる場合でも、従来
のものに較べて正確な分析を行うことができる。また、
上記ＢＰＳＧ膜中のＢ2 Ｏ3 含有率分析を行ったとこ
ろ、従来法による正確度（σd ）は０．９重量％である
のに対し、本発明によると０．２重量％に向上させるこ
とができた。As shown in FIG. 1, when the film thickness and composition of the BPSG / Si wafer are analyzed by performing background correction using the correction calibration curve method, an artificial cumulative film ( When Mo.B 4 C) is used, and even when the thickness of the sample is different, a more accurate analysis can be performed as compared with the conventional one. Also,
Analysis of the content of B 2 O 3 in the BPSG film revealed that the accuracy (σ d ) obtained by the conventional method was 0.9% by weight, but was improved to 0.2% by weight according to the present invention. I was able to.
【００２３】Ｂ以外の超軽元素、例えば炭素の分析にお
いても、同様な濃度算出式により、正確な濃度が得られ
た。In the analysis of ultra-light elements other than B , for example, carbon, accurate concentrations were obtained by the same concentration calculation formula.
【００２４】[0024]
【発明の効果】以上説明したように、この発明によれ
ば、分光素子で発生するＸ線による分析誤差を少なくで
きて、超軽元素でも正確に分析することができる。As described above, according to the present invention, an analysis error due to X-rays generated in a spectroscopic element can be reduced, and an ultra-light element can be accurately analyzed.
【図１】本発明のバックグランド補正法を説明するグラ
フである。FIG. 1 is a graph illustrating a background correction method of the present invention.
【図２】試料膜厚による濃度偏差の変化を示すグラフで
ある。FIG. 2 is a graph showing a change in concentration deviation depending on a sample film thickness.
【図３】試料からのＳｉ−Ｋα線の強度による濃度偏差
の変化を示すグラフである。FIG. 3 is a graph showing a change in a concentration deviation depending on the intensity of a Si-Kα ray from a sample.
【図４】蛍光Ｘ線分析装置を概略的に示す図である。FIG. 4 is a diagram schematically showing a fluorescent X-ray analyzer.
【図５】人工累積膜（Ｍｏ・Ｂ4 Ｃ）を示す断面図であ
る。FIG. 5 is a cross-sectional view showing an artificial cumulative film (Mo.B 4 C).
【図６】人工累積膜（Ｍｏ・Ｂ4 Ｃ）を用いたＮａＦと
ＬｉＦの分析曲線を示すグラフである。FIG. 6 is a graph showing an analysis curve of NaF and LiF using an artificial cumulative film (Mo.B 4 C).
【図７】人工累積膜（Ｎｉ・Ｃ）を用いたＮａＦとＬｉ
Ｆの分析曲線を示すグラフである。FIG. 7: NaF and Li using artificial cumulative film (Ni · C)
5 is a graph showing an analysis curve of F.
２…試料、３…分光素子、Ｘ１…１次Ｘ線、Ｘ２…蛍光
Ｘ線、Ｘ３…回折Ｘ線。2 ... sample, 3 ... spectroscopic element, X1: primary X-ray, X2: fluorescent X-ray, X3 ... diffraction X-ray.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平５−240809（ＪＰ，Ａ) 特開 平８−271455（ＪＰ，Ａ) 特開 昭63−191951（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G01N 23/22 - 23/227 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-240809 (JP, A) JP-A 8-271455 (JP, A) JP-A-63-191951 (JP, A) (58) Survey Field (Int.Cl. 7 , DB name) G01N 23/22-23/227
Claims (1)
蛍光Ｘ線を分光素子で回折してその強度を測定し、 濃度算出式を用いて上記強度から試料に含まれた測定対
象元素の濃度を算出する蛍光Ｘ線分析方法において、 上記濃度算出式は、上記試料中の測定対象元素からの蛍
光Ｘ線強度に比例した項と、上記分光素子に入射する外乱Ｘ線の強度に比例した項で
あって、この外乱Ｘ線によって上記分光素子に含まれた
上記測定対象元素と同一の元素が励起されて、上記測定
対象元素からの蛍光Ｘ線が上記分光素子で回折される回
折角と同一角度で分光素子から出射する蛍光Ｘ線の強度
を示す 項と、 定数項とからなることを特徴とするバックグランド補正
法。1. A fluorescent X-ray generated from a sample irradiated with primary X-rays is diffracted by a spectroscopic element to measure its intensity, and the intensity of the element to be measured contained in the sample is calculated from the intensity using a concentration calculation formula. In the fluorescent X-ray analysis method for calculating the concentration, the concentration calculation formula is proportional to a term proportional to the fluorescent X-ray intensity from the element to be measured in the sample and to the intensity of disturbance X-rays incident on the spectroscopic element. In terms
Then, it was included in the above-mentioned spectral element by this disturbance X-ray.
The same element as the element to be measured is excited,
The time when the fluorescent X-rays from the target element are diffracted by the spectroscopic element
The intensity of fluorescent X-rays emitted from the spectroscopic element at the same angle as the angle
Background correction method, wherein the term, that consisting of a constant term that indicates the.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6047763A JP3034420B2 (en) | 1994-02-21 | 1994-02-21 | Background correction method for X-ray fluorescence analysis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6047763A JP3034420B2 (en) | 1994-02-21 | 1994-02-21 | Background correction method for X-ray fluorescence analysis |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07229863A JPH07229863A (en) | 1995-08-29 |
| JP3034420B2 true JP3034420B2 (en) | 2000-04-17 |
Family
ID=12784420
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6047763A Expired - Fee Related JP3034420B2 (en) | 1994-02-21 | 1994-02-21 | Background correction method for X-ray fluorescence analysis |
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| Country | Link |
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| JP (1) | JP3034420B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1038825A (en) * | 1996-07-18 | 1998-02-13 | Rigaku Ind Co | Fluorescent x-ray specromerer |
| KR100453658B1 (en) * | 1998-01-08 | 2004-12-17 | 삼성전자주식회사 | Method for analyzing thickness of bpsg membrane using xps and recording medium for storing program for bpsg membrane thickness analysis |
| DE19926056B4 (en) * | 1999-06-08 | 2004-03-25 | Gkss-Forschungszentrum Geesthacht Gmbh | Device for analyzing atomic and / or molecular elements using wavelength-dispersive, X-ray spectrometric devices |
| JP3600849B2 (en) * | 2001-06-11 | 2004-12-15 | 理学電機工業株式会社 | Multilayer spectroscopy device for boron X-ray fluorescence analysis |
| JP6774896B2 (en) * | 2017-03-10 | 2020-10-28 | 日本電子株式会社 | Analyzer and analysis method |
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1994
- 1994-02-21 JP JP6047763A patent/JP3034420B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JPH07229863A (en) | 1995-08-29 |
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