JP3027378B1 - Method and apparatus for producing alloy film by chemical vapor deposition - Google Patents

Abstract

Abstract: PROBLEM TO BE SOLVED: To obtain various alloy films safely using an inexpensive raw material (pure metal or alloy). SOLUTION: A plurality of metals having different vapor pressures are introduced into respective raw material vaporization chambers 24 and 26 by introducing chlorine gas or the like and heated under reduced pressure to vaporize each metal as a metal chloride. Of the metal chloride gas in the mixing chamber 40
Then, the mixture is reacted with hydrogen in the reaction chamber 42 to produce or form an alloy foil.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an alloy film by chemical vapor deposition, which can form a dense alloy film having various compositions for the purpose of improving heat resistance, corrosion resistance, abrasion resistance and the like. The present invention relates to a manufacturing method and an apparatus.

[0002]

2. Description of the Related Art Conventionally, metal films or alloy films have been formed mainly for use in electronic equipment parts such as LSIs, and fluorides, chlorides, and the like having low vaporization temperatures are used as raw materials.
Organic metals and the like have been used. In chemical vapor deposition, a method of obtaining a metal chloride gas by reacting a metal with a gas such as chlorine is a method of forming a pure metal such as aluminum or rhenium or a ceramic such as titanium nitride, silicon carbide or silicon nitride. It has been used for membranes. In addition to the method of exciting and reacting the raw material gas by heating, the chemical vapor deposition technique can be excited by plasma or light for the purpose of application to electronic equipment parts that require film formation at lower temperature. Has been developed and put to practical use in combination with heating.

Japanese Patent Application Laid-Open No. 10-189561 discloses a method in which an organic metal as a raw material is dissolved in a solvent to obtain a liquid state, and the reaction raw material is vaporized by a vaporizer and then introduced into the reactor to form a liquid on a semiconductor substrate. A chemical vapor deposition technique for forming a thin film on a substrate has been disclosed. JP-A-63-24069 discloses that a base material is subjected to a chemical vapor deposition process at a predetermined temperature with a deposition gas containing a gaseous vapor deposition metal to coat the surface of the base material with a metal. For example, the surface of a steel material is coated with Si and Fe
As a method of forming a ₃ Si layer, SiCl ₄ to the steel
It is described that a chemical vapor deposition process is performed at a high temperature using a deposition gas containing a gas. In addition, 63
Japanese Patent No. 158979 discloses a method in which a plurality of raw material evaporating sections each having a controllable temperature and carrier gas flow rate are provided, and vaporized raw materials vaporized in each raw material evaporating section are supplied to a mixing chamber via a gas pipe. There is disclosed a chemical vapor deposition apparatus for forming a film by reacting hydrogen vaporized raw material introduced into a chemical vapor deposition chamber through a hole with hydrogen.

[0004]

However, in forming an alloy foil or an alloy film made of, for example, iron, nickel, chromium, etc., an organic metal raw material having a low vaporization temperature is extremely expensive and has a danger of explosion. Since it is a highly toxic and toxic material, there was a problem in terms of safety. Further, raw materials such as metal chlorides are expensive, and as shown in FIG. 5, the vapor pressure of the metal chlorides is high, so that the vaporization temperature is high, so that the vaporization chamber and the reaction chamber are connected by piping or the like. In a chemical vapor deposition apparatus, it was impossible to cope with the limitation of heat resistance of pipes and valves. Also, for example,
It has been difficult to vaporize a material having a low vaporization temperature such as tantalum and a material having a high vaporization temperature such as iron in one vaporization chamber.

Further, in the case of a material having a different reaction temperature between chloride and hydrogen, the temperature of forming an alloy foil or forming a film is extremely high so that a metal chloride having a high reaction temperature with hydrogen also reacts. There is a need, and it is very difficult to control the structure such as refinement of crystal grains. For example, as shown in FIG. 6, a thermodynamic equilibrium calculation result of a film formed by a reaction between a metal chloride and hydrogen indicates that the reaction between iron chloride, nickel chloride, and chromium chloride and hydrogen is at least according to the thermodynamic equilibrium calculation. 430
The reaction between tantalum chloride and hydrogen occurs at
It does not occur unless it is above 30 ° C.

The present invention has been made in view of the above points, and an object of the present invention is to heat and reduce the pressure of a plurality of metals having different vapor pressures in separate vaporization chambers and add a chlorine gas or a hydrogen chloride gas to the metals. By vaporizing as chloride, mixing these gases, and reacting with hydrogen or the like to produce or form an alloy foil, alloy films with various compositions and structures can be formed using materials having various vaporization temperatures. Can be formed, and
An object of the present invention is to provide a method and an apparatus for producing an alloy film by chemical vapor deposition, which can safely produce or form an alloy foil using an inexpensive pure metal or alloy as a raw material.

Another object of the present invention is to directly connect a plurality of vaporization chambers to the reaction chamber so that the temperature from the vaporization chamber to the reaction chamber is higher than the highest solidification temperature among the metal chloride vapors used. An object of the present invention is to provide a method and an apparatus for manufacturing an alloy film by chemical vapor deposition, which can hold and prevent adhesion of a metal or the like due to a decrease in temperature to the inside of the apparatus. Also,
Still another object of the present invention is to provide an alloy foil or film by uniformly reacting a reaction having a different reaction temperature with hydrogen using plasma in chemical vapor deposition using two or more kinds of metal chlorides as raw materials. An object of the present invention is to provide a method and an apparatus for producing an alloy film by chemical vapor deposition, which can easily control the structure such as the refinement of crystal grains in the method.

[0008]

In order to achieve the above-mentioned object, a method for producing an alloy film by chemical vapor deposition according to the present invention is characterized in that a plurality of metals having different vapor pressures are treated with chlorine gas in separate vaporization chambers. Alternatively, a hydrogen chloride gas is introduced and heated under reduced pressure to vaporize each metal as a metal chloride.Then, after mixing these metal chloride gases, they are reacted with hydrogen in a reaction chamber to form an alloy foil. (See FIGS. 1 and 2). In the above method of the present invention, the composition and production rate of the alloy foil or film can be controlled by changing at least one of the heating temperature and pressure of the vaporization chamber and the supply flow rate of chlorine gas or hydrogen chloride gas.

In the method of the present invention, any one of argon, helium and nitrogen can be introduced into the vaporization chamber as a carrier gas together with the chlorine gas or the hydrogen chloride gas (see FIGS. 1 and 2). ). In the method of the present invention, the composition and production rate of the alloy foil or film are changed by changing at least one of the heating temperature and pressure of the vaporization chamber, the supply flow rate of chlorine gas or hydrogen chloride gas, and the flow rate of carrier gas. Can be controlled.

In the method of the present invention, a plurality of vaporization chambers are directly connected to the reaction chamber, and the temperature from the vaporization chamber to the reaction chamber is set to a temperature higher than the highest solidification temperature among the metal chloride vapors used (for example, , 500 ° C. or higher) (see FIG. 1). Further, in these methods of the present invention, when a plurality of metal chlorides having different reaction temperatures with hydrogen are reacted with hydrogen in the reaction chamber, plasma excitation is performed to uniformly react the metal chlorides with hydrogen. (See FIGS. 3 and 4). Further, in these methods of the present invention, for example, using iron, chromium and nickel as the raw material metals, in separate vaporization chambers, respectively,
Introduce chlorine gas for iron and nickel, introduce hydrogen chloride gas for chromium, obtain the respective metal chloride gas by heating and decompression, and mix these metal chloride gases. After that, it is made to react with hydrogen in a reaction chamber, so that foil or film formation of an iron-chromium-nickel alloy can be performed (see FIG. 2).

In the apparatus for producing an alloy film by chemical vapor deposition according to the present invention, a plurality of metals as raw materials are separately put (contained), and a metal chloride is heated and reduced in pressure and introduced with chlorine gas or hydrogen chloride gas. For obtaining the gas, a plurality of raw material vaporization chambers each provided with a heating means and a chlorine gas introduction means or a hydrogen chloride gas introduction means, and metal chloride vapors vaporized in each raw material vaporization chamber are mixed, A mixing chamber directly connected to a plurality of raw material vaporization chambers, and a hydrogen introduction means in which a metal chloride vapor mixed in the mixing chamber is introduced and a production or film formation of an alloy foil is performed by a reaction with hydrogen. It is characterized by comprising a reaction chamber directly connected to the mixing chamber, and decompression means connected to any of the raw material vaporization chamber, the mixing chamber, and the reaction chamber (see FIGS. 1 and 2).

In the above-mentioned apparatus of the present invention, a carrier gas introducing means can be connected to each raw material vaporizing chamber together with a chlorine gas introducing means or a hydrogen chloride gas introducing means (see FIGS. 1 and 2). In the apparatus of the present invention, the temperature of the heating means, the pressure of the pressure reducing means, the flow rate of the chlorine gas introducing means or the hydrogen chloride gas introducing means and / or the flow rate of the carrier gas introducing means can be adjusted, and the alloy foil Alternatively, the composition and rate of formation of the film can be controlled. Further, in these apparatuses of the present invention, a plurality of raw material vaporization chambers are passed through a mixing chamber so that the metal chloride vapor vaporized in the raw material vaporization chamber is introduced into the reaction chamber without being solidified in a heated state. Preferably, it is directly connected to the reaction chamber (see FIG. 1).

In the apparatus of the present invention, when a plurality of metal chlorides having different reaction temperatures with hydrogen are reacted with hydrogen in a reaction chamber, the reaction is carried out in order to uniformly react the metal chloride with hydrogen. It is preferable to provide a plasma generation means at a position immediately before the chamber or the reaction chamber so as to perform plasma excitation (see FIGS. 3 and 4). As the plasma generating means, for example, one using any one of a high-frequency plasma, a DC plasma, and a microwave plasma is used.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below, but the present invention is not limited to the following embodiments, and can be implemented with appropriate modifications. . FIG. 1 shows an apparatus for carrying out a method for producing an alloy film by chemical vapor deposition according to a first embodiment of the present invention. The chemical vapor deposition apparatus shown in FIG. 1 includes, for example, a substantially cylindrical furnace 10 made of a refractory or the like, and a reaction tube 12 provided in the substantially cylindrical furnace 10. Heaters 14, 16, 18, 20, and 22 are provided. As the reaction tube 12, for example, quartz, isotropic graphite, or the like having high corrosion resistance to chlorine is used. As a heating method, a method such as direct current heating, electric resistance heating, or xenon lamp heating is used. Electric resistance heating using a heating element (heater) is preferable because of easy temperature control. As a heater material, graphite, nichrome, molybdenum, zirconia, silicon carbide, or the like is used.

As shown in FIG. 1, raw material vaporization chambers 24, 26
, Metals having different vapor pressures are separately put in advance (contained), chlorine gas is added to these raw materials from a chlorine gas cylinder 28, and the raw material vaporization chambers 24 and 26 are heated by the heaters 14 and 16, respectively. Then, the raw material metal is vaporized as metal chloride. The heating temperature of the raw material vaporization chamber varies depending on the metal to be treated,
Heat in the temperature range of 1500 ° C. The lower the pressure, the easier the gas is to evaporate, but it is usually 500 Torr or less, preferably 0.1 to 100 Torr. The illustration of a vacuum pump as a decompression means is omitted. Also, for example,
When iron, nickel, tantalum or the like is a raw material, chlorine gas is introduced. When chromium or the like is a raw material, hydrogen chloride gas is introduced. Since each metal is vaporized as metal chloride by heating and adding chlorine gas in separate raw material vaporization chambers, materials with various vaporization temperatures can be used, and after mixing these gases, react with hydrogen etc. In this way, alloy foil production or film formation can be performed. In FIG. 1, two raw material vaporization chambers are shown on both sides, but the front side and / or
Alternatively, another raw material vaporizing chamber is provided on the back side or the like, and has the same configuration as the raw material vaporizing chambers 24 and 26. Of course, there may be two raw material vaporization chambers.

A gas such as argon, helium, nitrogen or the like can be introduced into the raw material vaporization chamber as a carrier gas together with chlorine gas and hydrogen chloride gas. In FIG. 1, as an example, argon gas is introduced into the raw material vaporization chambers 24 and 26 from an argon gas cylinder 30 together with chlorine gas. The flow rate of the chlorine gas introduced from the chlorine gas cylinder 28 into the raw material vaporization chambers 24 and 26 is controlled by a flow controller (MFC).
32 and 34 are adjustable. The flow rates of the carrier gas introduced from the argon gas cylinder 30 into the raw material vaporization chambers 24 and 26 are controlled by flow controllers (MFC) 36 and 3 respectively.
8 can be adjusted. The heating temperatures of the raw material vaporization chambers 24 and 26 are changed by the heaters 14 and 16, respectively, the pressure is changed by pressure reducing means (not shown) such as a vacuum pump,
By changing the flow rate of the chlorine gas, the flow rate of the hydrogen chloride gas, the flow rate of the carrier gas, and the like by the above-described means, the composition and the production rate of the alloy foil or film can be controlled.

The metal chloride vapors vaporized in the raw material vaporization chambers 24 and 26 are mixed in the mixing chamber 40 and introduced into the reaction chamber 42 while being heated by the heater 18. The mixed metal chloride vapor reacts with hydrogen from the hydrogen gas cylinder 44 in the reaction chamber 42 to form an alloy film on the substrate 46. 48 is a flow controller. The substrate 46 is
For example, it is placed on a table that rotates in the reaction chamber 42. The temperature from introduction of the raw material vaporization chambers 24 and 26 to the reaction chamber 42 must be maintained at or above the highest solidification temperature among the metal chloride vapors used. A plurality of raw material vaporization chambers 24,
By connecting the reactor 26 directly to the reaction chamber 42 without using a pipe or the like, a structure in which the temperature from the raw material vaporization chambers 24 and 26 to the reaction chamber 42 is maintained at a required temperature or higher becomes possible. Is prevented. The holding temperature varies depending on the material metal, but is 500 to 1500.
C, preferably in the range of 500 to 1000C.

Although not shown in FIG. 1, for example, in the case of a reaction having a different reaction temperature between hydrogen and tantalum chloride and iron chloride, plasma excitation is performed to make the metal chloride and hydrogen uniform. Can be reacted. In this case, the pressure is in the range of 0.1 to 20 Torr, and the reaction temperature is 500
It is preferable to be in the range of -1000 ° C. The pressure can be adjusted by a pressure reducing means (not shown) such as a vacuum pump, and the reaction temperature can be adjusted by the heaters 20 and 22. When performing plasma excitation, it is desirable to generate plasma at the reaction chamber 42 or at a position immediately before the reaction chamber 42. In addition, as a method of plasma excitation, for example, high-frequency plasma, DC plasma, microwave plasma, and the like can be applied, but high-frequency plasma is preferable in terms of cost and effectiveness.
As the high-frequency plasma, for example, as shown in FIG. 3, the substrate 46 and the electrode 5 installed in the reaction chamber 42 are used.
A coil-type electrode 52 is installed around the outer periphery of the reaction tube 12 immediately before the reaction chamber 42 as shown in FIG. There are inductive coupling types to be generated, but both are effective. 3 and 4, reference numeral 54 denotes a high frequency power supply. Note that the substrate 46 in FIG. 3 is an electrode / substrate that also serves as an electrode.

FIG. 2 shows an apparatus for carrying out a method for producing an alloy film by chemical vapor deposition according to a second embodiment of the present invention. The basic configuration of the chemical vapor deposition apparatus shown in FIG. 2 is the same as that of the chemical vapor deposition apparatus shown in FIG. 1, and the apparatus is viewed from above. In the present embodiment,
As an example, a case where a film of an iron-chromium-nickel alloy is formed will be described. As shown in FIG.
6, iron, chromium, and nickel are separately put in the plurality of raw material vaporization chambers 58, 60, and 62, respectively. For iron and nickel, a chlorine gas is introduced from a chlorine gas cylinder 64, and On the other hand, a hydrogen chloride gas is introduced from a hydrogen chloride gas cylinder 66, and each metal chloride gas is obtained by heating and reducing the pressure. Tantalum or the like can be vaporized as metal chloride in the preliminary raw material vaporization chamber 68. Chlorine gas cylinder 6 for tantalum
Introduce chlorine gas from 4. In this case, an alloy to which tantalum is added is obtained.

The heating temperature of the raw material vaporization chamber is 200 to 1100 ° C., preferably 700 to 100 ° C. in the case of iron or nickel.
At 0 ° C., it reacts with chlorine gas under reduced pressure to vaporize. In the case of chromium, the heating temperature is set to 700 to 110.
It is made to react with hydrogen chloride gas under reduced pressure at 0 ° C., preferably 700 to 900 ° C. to vaporize. In tantalum, the heating temperature is 100 to 800 ° C, preferably 200 to 800 ° C.
At 500 ° C., it reacts with chlorine gas under reduced pressure to vaporize. The lower the pressure, the easier it is to evaporate.
The pressure is set to 00 Torr or less, preferably in the range of 0.1 to 100 Torr. It is preferable to introduce a gas such as argon, helium, or nitrogen as a carrier gas into the raw material vaporization chamber together with the chlorine gas and the hydrogen chloride gas. In FIG. 2, as an example, an argon gas is introduced into the raw material vaporization chambers 58, 60, 62, and 68 from an argon gas cylinder 70.

From the chlorine gas cylinder 64 to the raw material vaporization chamber 58,
The flow rates of chlorine gas introduced into 62 and 68 can be adjusted by flow controllers (MFC) 72, 74 and 76, respectively. Also, the raw material vaporization chamber 60 is supplied from the hydrogen chloride gas cylinder 66.
Flow rate of hydrogen chloride gas to be introduced into the flow controller (MFC)
78 can be adjusted. The flow rate of the carrier gas introduced from the argon gas cylinder 70 into the raw material vaporization chambers 58, 60, 62, 68 is controlled by a flow controller (MFC) 8 respectively.
Adjustable by 0, 82, 84, 86. By changing the heating temperature, pressure, chlorine gas flow rate or hydrogen chloride gas flow rate, and carrier gas flow rate of the raw material vaporization chamber, iron-
The composition and production rate of the chromium-nickel alloy foil or film can be controlled. Raw material vaporization chamber 58, 60, 6
The metal chloride vapors vaporized at 2, 68 are mixed in the mixing chamber and introduced into the reaction chamber in a heated state. The mixed metal chloride vapor reacts with hydrogen in the reaction chamber,
An iron-chromium-nickel alloy is formed on the substrate.

When tantalum is added to the above alloy, it is necessary to excite the plasma as described above, but it is desirable to generate plasma in the reaction chamber or at a position immediately before the reaction chamber. In this case, the pressure is 0.1-20 Torr
And the reaction temperature is preferably in the range of 500 to 1000 ° C. In addition, as a method of plasma excitation, for example, high-frequency plasma, DC plasma, microwave plasma, and the like can be applied, but high-frequency plasma is preferable in terms of cost and effectiveness. Other configurations and operations are the same as those in the first embodiment.

In the present embodiment, main chemical reactions occurring in the raw material vaporization chamber and the reaction chamber are as follows. (S: solid, g: gas) (raw material vaporization chamber) Fe (s) + Cl ₂ (g) → FeCl ₂ (g) 2Cr (s) + 6HCl (g) → 2CrCl ₃ (g) +
3H ₂ (g) Ni (s) + Cl ₂ (g) → NiCl ₂ (g) 2Ta (s) + 5Cl ₂ (g) → 2TaCl ₅ (g) (reaction chamber) FeCl ₂ (g) + H ₂ (g) → Fe (s) + 2HCl
(G) 2CrCl ₃ (g) + 3H ₂ (g) → 2Cr (s) + 6H
Cl (g) NiCl ₂ (g) + H ₂ (g) → Ni (s) + 2HCl
(G) 2TaCl ₅ (g) + 5H ₂ (g) → 2Ta (s) +10
HCl (g)

[0024]

As described above, the present invention has the following effects. (1) A plurality of metals having different vapor pressures are vaporized as metal chlorides by heating and depressurizing in separate vaporization chambers and adding chlorine gas or hydrogen chloride gas, and these gases are mixed and then reacted with hydrogen or the like. By making or forming an alloy foil, it is possible to use a pure metal or alloy which is inexpensive as compared with an organic metal material or the like as a raw material, and to use various materials or materials having various vaporization temperatures and various compositions and structures. And the like can be obtained safely. (2) The composition and production rate of the alloy foil or film can be controlled by changing the heating temperature and pressure of the vaporization chamber, the supply flow rate of chlorine gas or hydrogen chloride gas, and the flow rate of carrier gas. (3) By connecting a plurality of vaporization chambers directly to the reaction chamber,
The temperature from the vaporization chamber to the reaction chamber is maintained at or above the highest solidification temperature (for example, a high temperature of 500 ° C. or more) among the metal chloride vapors to be used, and metal adheres to the apparatus due to the temperature drop. Can be prevented. (4) In chemical vapor deposition using two or more kinds of metal chlorides as raw materials, a reaction having a different reaction temperature with hydrogen is uniformly reacted by using plasma, so that crystal grains in the alloy foil or film are refined. Etc. can be easily controlled.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional front view showing an apparatus for performing a method of manufacturing an alloy film by chemical vapor deposition according to a first embodiment of the present invention.

FIG. 2 is a schematic plan view showing an apparatus for performing a method for manufacturing an alloy film by chemical vapor deposition according to a second embodiment of the present invention.

FIG. 3 is a schematic enlarged cross-sectional view showing an example of installation of electrodes of a capacitively-coupled high-frequency plasma generating means in the first embodiment of the present invention.

FIG. 4 is a schematic enlarged cross-sectional view showing an example of installation of electrodes of an inductively-coupled high-frequency plasma generating means in the first embodiment of the present invention.

FIG. 5 is a diagram showing the vapor pressure of a metal chloride.

FIG. 6 is a diagram showing a thermodynamic equilibrium calculation result of a film formed by a reaction between a metal chloride and hydrogen.

[Explanation of symbols]

10, 56 Substantially cylindrical furnace 12 Reaction tube 14, 16, 18, 20, 22 Heater 24, 26, 58, 60, 62, 68 Raw material vaporization chamber 28, 64 Chlorine gas cylinder 30, 70 Argon gas cylinder 32, 34, 36, 38 , 48, 72, 74, 76, 7
8, 80, 82, 84, 86 Flow controller 40 Mixing chamber 42 Reaction chamber 44 Hydrogen gas cylinder 46 Substrate 50 Electrode 52 Coiled electrode 54 High frequency power supply 66 Hydrogen chloride gas cylinder

Claims (13)

(57) [Claims] Claims: 1. A plurality of metals having different vapor pressures are introduced into respective vaporization chambers by introducing chlorine gas or hydrogen chloride gas and heated under reduced pressure to vaporize each metal as a metal chloride. A method for producing an alloy film by chemical vapor deposition, comprising mixing a metal chloride gas described above and reacting it with hydrogen in a reaction chamber to produce or form an alloy foil. 2. The chemical gas according to claim 1, wherein the composition and the production rate of the alloy foil or film are controlled by changing at least one of the heating temperature and pressure of the vaporization chamber and the supply flow rate of chlorine gas or hydrogen chloride gas. Manufacturing method of alloy film by phase evaporation. 3. The method for producing an alloy film by chemical vapor deposition according to claim 1, wherein any one of argon, helium and nitrogen as a carrier gas is introduced into the vaporization chamber together with the chlorine gas or the hydrogen chloride gas. 4. The composition and production rate of the alloy foil or film are controlled by changing at least one of the heating temperature and pressure of the vaporization chamber, the supply flow rate of chlorine gas or hydrogen chloride gas, and the flow rate of carrier gas. A method for producing an alloy film by chemical vapor deposition according to the above. 5. The method according to claim 1, wherein a plurality of vaporization chambers are directly connected to the reaction chamber, and the temperature from the vaporization chamber to the reaction chamber is maintained at a temperature higher than the highest solidification temperature among the metal chloride vapors used. Or a method for producing an alloy film by chemical vapor deposition. 6. The method according to claim 1, wherein when a plurality of metal chlorides having different reaction temperatures with hydrogen are reacted with hydrogen in the reaction chamber, plasma excitation is performed to uniformly react the metal chloride with hydrogen. The method for producing an alloy film by chemical vapor deposition according to any one of the above. 7. Metals as raw materials are iron, chromium and nickel. In separate vaporization chambers, chlorine gas is introduced for iron and nickel, and hydrogen chloride gas is introduced for chromium. , Heating and decompression to obtain each metal chloride gas, and after mixing these metal chloride gases, react with hydrogen in the reaction chamber to obtain iron-chromium-
The method for producing an alloy film by chemical vapor deposition according to any one of claims 1 to 6, wherein a nickel-based alloy foil is prepared or formed. 8. A plurality of metals as raw materials are separately charged, and a heating means and a chlorine gas introduction means are respectively provided to obtain a metal chloride gas by heating and depressurizing and introducing chlorine gas or hydrogen chloride gas. A plurality of raw material vaporization chambers provided with hydrogen chloride gas introduction means, a mixing chamber directly connected to the plurality of raw material vaporization chambers in which metal chloride vapors vaporized in the respective raw material vaporization chambers are mixed, and a mixing chamber The metal chloride vapor is introduced, and the production or film formation of the alloy foil is performed by reaction with hydrogen, a reaction chamber having hydrogen introduction means and directly connected to the mixing chamber, a raw material vaporizing chamber, a mixing chamber and An apparatus for producing an alloy film by chemical vapor deposition, comprising: a decompression means connected to one of the reaction chambers. 9. The apparatus for producing an alloy film by chemical vapor deposition according to claim 8, wherein carrier gas introducing means is connected to each raw material vaporization chamber together with chlorine gas introducing means or hydrogen chloride gas introducing means. 10. The composition of the alloy foil or film and the temperature of the heating means, the pressure of the pressure reducing means, the flow rate of the chlorine gas introducing means or the hydrogen chloride gas introducing means and / or the flow rate of the carrier gas introducing means can be adjusted. 10. The apparatus for producing an alloy film by chemical vapor deposition according to claim 9, wherein the production rate can be controlled. 11. A plurality of raw material vaporization chambers are directly connected to a reaction chamber via a mixing chamber such that metal chloride vapors vaporized in the raw material vaporization chamber are introduced into the reaction chamber without being solidified in a heated state. An apparatus for producing an alloy film by chemical vapor deposition according to claim 8, 9 or 10. 12. When a plurality of metal chlorides having different reaction temperatures with hydrogen are reacted with hydrogen in the reaction chamber, the metal chloride and the hydrogen are uniformly reacted with hydrogen in the reaction chamber or at a position immediately before the reaction chamber. The apparatus for producing an alloy film by chemical vapor deposition according to any one of claims 8 to 11, wherein a plasma generating means is provided to perform plasma excitation. 13. The apparatus for producing an alloy film by chemical vapor deposition according to claim 12, wherein the plasma generating means uses one of a high-frequency plasma, a DC plasma, and a microwave plasma.