JP3013348B2 - X-ray exposure mask and method of manufacturing the same - Google Patents
X-ray exposure mask and method of manufacturing the sameInfo
- Publication number
- JP3013348B2 JP3013348B2 JP8069191A JP8069191A JP3013348B2 JP 3013348 B2 JP3013348 B2 JP 3013348B2 JP 8069191 A JP8069191 A JP 8069191A JP 8069191 A JP8069191 A JP 8069191A JP 3013348 B2 JP3013348 B2 JP 3013348B2
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- JP
- Japan
- Prior art keywords
- ray
- mask
- support film
- film
- absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はＸ線露光用マスク（以下
「Ｘ線マスク」と称す。）に関し、さらに詳しくはＸ線
リソグラフィにおける高精度アライメントを可能とする
Ｘ線マスクに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask for X-ray exposure (hereinafter referred to as "X-ray mask"), and more particularly to an X-ray mask capable of high-accuracy alignment in X-ray lithography.
【０００２】[0002]
【従来の技術】Ｘ線リソグラフィでは、Ｘ線マスクと転
写用基板（一般的にはシリコンウェハー）との高精度の
アライメントが必要である。アライメント光としては通
常単色光のＨe−Ｎeレーザーやｇ線（436nm）が用いら
れる。2. Description of the Related Art In X-ray lithography, high-precision alignment between an X-ray mask and a transfer substrate (generally, a silicon wafer) is required. Normally, a monochromatic He-Ne laser or a g-line (436 nm) is used as the alignment light.
【０００３】Ｘ線リソグラフィにおけるアライメントの
原理を図４により説明すると、Ｘ線マスク１の裏面から
アライメント光２を入射し、転写用基板３からの反射光
Ａと、Ｘ線マスク１のＸ線透過支持膜４上のＸ線吸収体
５からの反射光Ｂとを検出して、その強度差をアライメ
ント信号に変換する。従って、反射光Ａ，Ｂの強度差が
大きいほど光学コントラストは高くなるが、反射光Ａ，
ＢともにＸ線透過支持膜４による薄膜干渉の効果が大き
く、波長に対してほぼ同位相、同強度のリップルを持つ
反射率曲線を描く。このために、両者の光学コントラス
トが十分に取れず、しかも不安定になりやすく、高精度
アライメントは困難である。The principle of alignment in X-ray lithography will be described with reference to FIG. 4. Alignment light 2 is incident on the back surface of an X-ray mask 1, reflected light A from a transfer substrate 3 and X-ray transmission through the X-ray mask 1. The reflected light B from the X-ray absorber 5 on the support film 4 is detected, and the intensity difference is converted into an alignment signal. Therefore, the optical contrast increases as the difference in intensity between the reflected lights A and B increases.
In both cases B and B, the effect of the thin film interference by the X-ray transmission supporting film 4 is large, and a reflectance curve having a ripple having substantially the same phase and the same intensity with respect to the wavelength is drawn. For this reason, the optical contrast between the two cannot be sufficiently obtained, and furthermore, it tends to be unstable, and high-precision alignment is difficult.
【０００４】この問題を解決すべく、反射防止膜を用い
る方法が試みられているが、反射防止膜をＸ線透過支持
膜上に形成すると、反射防止膜の内部応力によりパター
ン位置精度が劣化したり、あるいはＸ線照射後に反射防
止膜の光学特性が変化するという新たな問題が生じる。In order to solve this problem, a method using an anti-reflection film has been attempted. However, when the anti-reflection film is formed on the X-ray transmission support film, the pattern position accuracy is deteriorated due to the internal stress of the anti-reflection film. Or a new problem that the optical characteristics of the antireflection film change after X-ray irradiation.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、上記従来の
解決すべき課題に鑑みなされたもので、その目的は、Ｘ
線透過部とＸ線吸収部とのアライメント光の反射光強度
の光学コントラストを向上させて高精度のアライメント
を可能にしたＸ線マスクおよびその製造方法を提供する
ことにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems to be solved.
An object of the present invention is to provide an X-ray mask capable of performing high-precision alignment by improving the optical contrast of the intensity of reflected light of alignment light between a line transmitting portion and an X-ray absorbing portion, and a method of manufacturing the same.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
に、本発明のＸ線マスクは、Ｘ線透過支持膜上にパター
ン化されたＸ線吸収体の薄膜を形成したＸ線マスクにお
いて、Ｘ線透過部の支持膜とＸ線吸収部の支持膜に膜厚
差を設けたことを特徴とする。In order to achieve the above object, an X-ray mask of the present invention comprises an X-ray mask having a patterned X-ray absorber thin film formed on an X-ray transmission support film. The thickness difference is provided between the support film of the X-ray transmitting section and the support film of the X-ray absorbing section.
【０００７】特に、Ｘ線透過部とＸ線吸収部の各支持膜
からの反射光の分光反射率曲線がアライメント光の波長
に対して位相が異なるように前記各支持膜の膜厚が調整
されることが好ましい。In particular, the thickness of each of the support films is adjusted so that the spectral reflectance curves of the light reflected from the support films of the X-ray transmitting portion and the X-ray absorbing portion have different phases with respect to the wavelength of the alignment light. Preferably.
【０００８】また、本発明のＸ線マスクの製造方法は、
Ｘ線透過支持膜上にＸ線吸収体の薄膜を形成したマスク
ブランクの該Ｘ線吸収体の薄膜をパターニングした後、
マスクの表面および裏面からそれぞれＸ線透過支持膜を
エッチングしてＸ線透過部とＸ線吸収部の各支持膜の膜
厚を異ならしめることを特徴とする。Further, the method of manufacturing an X-ray mask according to the present invention comprises:
After patterning the X-ray absorber thin film of the mask blank in which the X-ray absorber thin film is formed on the X-ray transmission support film,
The X-ray transmission support film is etched from the front and back surfaces of the mask, respectively, so that the thickness of each support film in the X-ray transmission portion and the X-ray absorption portion is made different.
【０００９】このような本発明にあっては、Ｘ線透過部
の支持膜とＸ線吸収部の支持膜に膜厚差を設け、両者の
分光反射率曲線に位相差を持たせることにより、両者の
光学コントラストを向上させて、高精度のアライメント
を行なうことが出来る。In the present invention, a difference in film thickness is provided between the supporting film of the X-ray transmitting portion and the supporting film of the X-ray absorbing portion, and a phase difference is provided between the two spectral reflectance curves. By improving the optical contrast between the two, high-precision alignment can be performed.
【００１０】以下、本発明を更に詳細に説明する。Hereinafter, the present invention will be described in more detail.
【００１１】図１はアライメントの状態を説明するため
の本発明のＸ線マスクの断面図である。図中、Ｘ線マス
ク６は本発明の一実施例の構成を示し、Ｘ線透過支持膜
４上にパターン化されたＸ線吸収体５の薄膜が形成され
ている。さらに、図で明らかなように、Ｘ線透過部の支
持膜４ａの厚さｄsと、Ｘ線吸収部の支持膜４ｂの厚さ
ｄaとは異なっている。FIG. 1 is a cross-sectional view of the X-ray mask of the present invention for explaining the state of alignment. In the drawing, an X-ray mask 6 shows the structure of one embodiment of the present invention, and a thin film of a patterned X-ray absorber 5 is formed on an X-ray transmission support film 4. Further, as is apparent from the figure, the thickness ds of the support film 4a of the X-ray transmitting portion is different from the thickness da of the support film 4b of the X-ray absorbing portion.
【００１２】このような、Ｘ線透過部とＸ線吸収部とで
支持膜の厚さを異ならしめた本発明のＸ線マスクの製造
方法の一例を図２により説明する。An example of a method for manufacturing an X-ray mask of the present invention in which the thickness of the support film is different between the X-ray transmitting portion and the X-ray absorbing portion will be described with reference to FIG.
【００１３】シリコンウェハーなどの基板７上に、Ｘ線
透過支持膜（例えばＳｉＮ，ＳｉＣなど）４、Ｘ線吸収
体（例えばタンタル、タングステンなど）５を順に形成
し、基板７の裏面側にバックエッチング用マスク（例え
ばＳｉＮ，ＳｉＣなど）８を形成してなるＸ線マスクブ
ランク９（同図（ａ）参照）の表面に、Ｘ線吸収体エッ
チング用マスク（例えばＳｉＯ2など）10を形成する
（同図（ｂ）参照）。薄膜形成は公知のスパッタリン
グ、ＣＶＤ法、蒸着などの方法を任意に用いて行なうこ
とができる。An X-ray transmission support film (eg, SiN, SiC, etc.) 4 and an X-ray absorber (eg, tantalum, tungsten, etc.) 5 are sequentially formed on a substrate 7 such as a silicon wafer. An X-ray absorber etching mask (for example, SiO 2 or the like) 10 is formed on the surface of an X-ray mask blank 9 (see FIG. 1A) on which an etching mask (for example, SiN, SiC or the like) 8 is formed. (See FIG. 3B). The thin film can be formed by any known method such as sputtering, CVD, and vapor deposition.
【００１４】次に、レジストを塗布してこれをパターン
化11した後（同図（ｃ）参照）、最上層のＸ線吸収体エ
ッチング用マスク10のエッチングを行なってこれをパタ
ーン化10′し、レジストパターン11をアッシングする
（同図（ｄ）参照）。次いで、露出したＸ線吸収体５の
エッチングを行なってこれをパターン化５′する（同図
（ｅ）参照）。続いて、裏面側から基板７のバックエッ
チングを行なう（同図（ｆ）参照）。なお、エッチング
は、薄膜の材質にもよるが、高精度のパターニングが可
能であることから、ドライエッチングが望ましい。Next, after a resist is applied and patterned 11 (see FIG. 1C), the uppermost X-ray absorber etching mask 10 is etched and patterned 10 '. Then, the resist pattern 11 is ashed (see FIG. 3D). Next, the exposed X-ray absorber 5 is etched to form a pattern 5 '(see FIG. 9E). Subsequently, back etching of the substrate 7 is performed from the back surface side (see FIG. 6F). In addition, although the etching depends on the material of the thin film, dry etching is preferable because highly accurate patterning is possible.
【００１５】次に、マスクの裏面側から、Ｘ線透過支持
膜４のエッチング12を行ない、Ｘ線吸収部の支持膜４の
膜厚ｄaを調整する（同図（ｇ）参照）。続いて、Ｘ線
吸収体エッチング用マスクパターン10′を剥離すると同
時に、今度はマスクの表面側から、Ｘ線透過支持膜４の
エッチング12を行なって、Ｘ線透過部の支持膜４の膜厚
ｄsを調整する（同図（ｈ）参照）。もちろん、この時
のエッチングはＸ線吸収体のパターン５′には全く損傷
を与えない条件下で行なう。Next, the X-ray transmitting support film 4 is etched 12 from the back side of the mask to adjust the thickness da of the support film 4 of the X-ray absorbing portion (see FIG. 3G). Subsequently, the X-ray absorber etching mask pattern 10 'is peeled off, and at the same time, the etching 12 of the X-ray transmission supporting film 4 is performed from the mask surface side, and the thickness of the supporting film 4 in the X-ray transmitting portion is changed. ds is adjusted (see FIG. 3H). Of course, the etching at this time is performed under conditions that do not damage the X-ray absorber pattern 5 'at all.
【００１６】このようにして、本発明のＸ線マスク６が
出来上がる。ところで、Ｘ線透過支持膜４の膜厚ｄaお
よびｄsの調整は、基本的には膜厚ｄaとｄsとを異なら
しめることにより行ない、これによってＸ線透過部とＸ
線吸収部における反射光の分光反射率曲線に位相差をも
たせる。本発明では特に、アライメント光の波長に対し
て、Ｘ線透過部とＸ線吸収部における各分光反射率曲線
が各々ピークとボトム（又はボトムとピーク）になるよ
うな位相差を持たせるように、膜厚ｄaおよびｄsを調整
することが望ましい。反射光Ａ，Ｂ（図１参照）の強度
差が大きいほど両者の光学コントラストが十分に取れて
高くなるため、本発明のＸ線マスクは安定した高精度の
アライメントが行える。Thus, the X-ray mask 6 of the present invention is completed. The thicknesses da and ds of the X-ray transmission supporting film 4 are basically adjusted by making the thicknesses da and ds different from each other.
A phase difference is given to the spectral reflectance curve of the reflected light at the line absorbing section. In the present invention, in particular, the phase difference is set so that the spectral reflectance curves of the X-ray transmitting portion and the X-ray absorbing portion have a peak and a bottom (or a bottom and a peak) with respect to the wavelength of the alignment light. It is desirable to adjust the thicknesses da and ds. The greater the difference in intensity between the reflected lights A and B (see FIG. 1), the more sufficient the optical contrast between them can be obtained, and the higher the contrast. Therefore, the X-ray mask of the present invention can perform stable and accurate alignment.
【００１７】[0017]
【実施例】以下、実施例を示して本発明を更に具体的に
詳述する。The present invention will be described below in more detail with reference to examples.
【００１８】シリコンウェハー基板上に、Ｘ線透過支持
膜として２μm厚のＳｉＮxをＬＰＣＶＤ法により形成
し、さらにその上にＸ線吸収体として0.7μm厚のタンタ
ル（Ｔａ）をスパッタリングにより形成したＸ線マスク
ブランクから、図２に示す工程に従って本発明のＸ線マ
スクを作製した。なお、図２（ｇ）（ｈ）のＸ線透過支
持膜のエッチングはＣ2Ｆ6ガスの反応性イオンエッチン
グにより行なった。ここで、Ｘ線透過支持膜のＸ線吸収
部とＸ線透過部における膜厚ｄaおよびｄsは、Ｘ線透過
部からの反射光ＡとＸ線吸収部からの反射光Ｂ（図１参
照）とを検出し、その各々の分光反射率曲線（図３参
照）がアライメント光の波長（本実施例ではｇ線 436nm
を使用）に対してリップルのボトムとピークに近くなる
ように調整した。この時の膜厚差ｄa−ｄsは約1000Åで
あった。On a silicon wafer substrate, a 2 μm thick SiNx is formed as an X-ray transmission support film by LPCVD, and a 0.7 μm thick tantalum (Ta) is formed thereon as an X-ray absorber by sputtering. An X-ray mask of the present invention was produced from the mask blank according to the process shown in FIG. The etching of the X-ray transmission supporting film in FIGS. 2G and 2H was performed by reactive ion etching of C 2 F 6 gas. Here, the thicknesses da and ds of the X-ray absorbing portion and the X-ray transmitting portion of the X-ray transmitting support film are determined by the reflected light A from the X-ray transmitting portion and the reflected light B from the X-ray absorbing portion (see FIG. 1). Are detected, and the respective spectral reflectance curves (see FIG. 3) are determined by the wavelength of the alignment light (in this embodiment, g-line 436 nm).
Was adjusted so as to be closer to the bottom and peak of the ripple. At this time, the film thickness difference da-ds was about 1000 °.
【００１９】一方、上記本発明のＸ線マスクと同様に作
製したが、図４に示すようにＸ線透過支持膜に膜厚差を
設けてないもの、即ちＸ線吸収部とＸ線透過部とでＸ線
透過支持膜の膜厚ｄが一定のものを比較例のＸ線マスク
とし、この場合の分光反射率曲線を図５に示した。On the other hand, an X-ray mask produced in the same manner as the above-mentioned X-ray mask of the present invention, but having no difference in film thickness between the X-ray transmission supporting films as shown in FIG. The film having a constant thickness d of the X-ray transmission supporting film is used as the X-ray mask of the comparative example, and the spectral reflectance curve in this case is shown in FIG.
【００２０】比較例では、図５に示すように、ＡとＢの
曲線の波長に対する位相はほとんど同じである。このた
め、アライメント光としてｇ線（436nm）を使用したと
きに、Ａの反射率／Ｂの反射率＝35％／25％＝1.4とな
り、非常に低コントラストである。In the comparative example, as shown in FIG. 5, the phases of the curves A and B with respect to the wavelength are almost the same. Therefore, when g-line (436 nm) is used as the alignment light, the reflectance of A / the reflectance of B = 35% / 25% = 1.4, which is a very low contrast.
【００２１】これに対して、本発明では、図３に示すよ
うに、Ａの曲線とＢの曲線に位相差が生じ、しかも各々
の曲線のピークとボトムに近くなるようにＸ線透過支持
膜の膜厚ｄsおよびｄaが調整された結果、同じくアライ
メント光としてｇ線（436nm）を使用したときに、Ａの
反射率／Ｂの反射率＝48％／13％＝3.7となり、非常に
高いコントラストが得られることがわかる。On the other hand, in the present invention, as shown in FIG. 3, the X-ray transmission supporting film has a phase difference between the curve A and the curve B, and is close to the peak and bottom of each curve. As a result of adjusting the film thicknesses ds and da, the reflectance of A / the reflectance of B = 48% / 13% = 3.7 when g-line (436 nm) is also used as the alignment light, which is a very high contrast. Is obtained.
【００２２】[0022]
【発明の効果】以上詳細に説明したように、本発明によ
れば、Ｘ線透過部とＸ線吸収部でのＸ線透過支持膜に膜
厚差を設けることにより、両者の分光反射率曲線に位相
差を持たせて、使用するアライメント光の波長における
両者の光学コントラストを著しく向上することができる
ので、この結果安定した高精度のアライメントを行なう
ことが可能となる。As described above in detail, according to the present invention, by providing a film thickness difference between the X-ray transmitting portion and the X-ray transmitting support film in the X-ray absorbing portion, the spectral reflectance curve of the two can be obtained. Since the optical contrast between the two can be remarkably improved at the wavelength of the alignment light to be used, a stable and highly accurate alignment can be performed.
【図１】 アライメントの状態を説明するための本発明
のＸ線マスクの断面図である。FIG. 1 is a cross-sectional view of an X-ray mask of the present invention for explaining an alignment state.
【図２】 本発明のＸ線マスクの製造方法を工程順に示
す断面図である。FIG. 2 is a cross-sectional view showing a method for manufacturing an X-ray mask of the present invention in the order of steps.
【図３】 本発明のＸ線マスクの分光反射率曲線図であ
る。FIG. 3 is a spectral reflectance curve diagram of the X-ray mask of the present invention.
【図４】 アライメントの状態を説明するための従来の
Ｘ線マスクの断面図である。FIG. 4 is a cross-sectional view of a conventional X-ray mask for explaining an alignment state.
【図５】 従来のＸ線マスクの分光反射率曲線図であ
る。FIG. 5 is a spectral reflectance curve diagram of a conventional X-ray mask.
１，６ Ｘ線マスク ２ アライメント光 ３ 転写用基板 ４ Ｘ線透過支持膜 ５ Ｘ線吸収体 ７ 基板 ８ バックエッチング用マスク ９ Ｘ線マスクブランク 10 Ｘ線吸収体エッチング用マスク 11 レジストパターン 12 エッチング 1,6 X-ray mask 2 Alignment light 3 Transfer substrate 4 X-ray transmission support film 5 X-ray absorber 7 Substrate 8 Back etching mask 9 X-ray mask blank 10 X-ray absorber etching mask 11 Resist pattern 12 Etching
フロントページの続き (72)発明者 田中 正二 東京都台東区台東一丁目５番１号 凸版 印刷株式会社内 (72)発明者 大久保 欽司 東京都台東区台東一丁目５番１号 凸版 印刷株式会社内 (56)参考文献 特開 昭60−168145（ＪＰ，Ａ) 特開 昭62−20310（ＪＰ，Ａ) 特開 平１−128524（ＪＰ，Ａ) 特開 平４−130712（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/027 G03F 1/16 Continuation of the front page (72) Inventor Shoji Tanaka 1-1-1, Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd. (72) Inventor Kinji 1-5-1, Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd. (56) References JP-A-60-168145 (JP, A) JP-A-62-20310 (JP, A) JP-A-1-128524 (JP, A) JP-A-4-130712 (JP, A) ( 58) Field surveyed (Int.Cl. 7 , DB name) H01L 21/027 G03F 1/16
Claims (3)
線吸収体の薄膜を形成したＸ線露光用マスクにおいて、
Ｘ線透過部の支持膜とＸ線吸収部の支持膜に膜厚差を設
けたことを特徴とするＸ線露光用マスク。1. An X-ray patterned on an X-ray transparent support film.
In an X-ray exposure mask formed with a thin film of a line absorber,
An X-ray exposure mask, wherein a thickness difference is provided between a support film of an X-ray transmitting portion and a support film of an X-ray absorbing portion.
の反射光の分光反射率曲線がアライメント光の波長に対
して位相が異なるように前記各支持膜の膜厚が調整され
ている請求項１記載のＸ線露光用マスク。2. The thickness of each support film is adjusted so that the spectral reflectance curves of the light reflected from each support film of the X-ray transmitting portion and the X-ray absorption portion have different phases with respect to the wavelength of the alignment light. The mask for X-ray exposure according to claim 1.
形成したマスクブランクの該Ｘ線吸収体の薄膜をパター
ニングした後、マスクの表面および裏面からそれぞれＸ
線透過支持膜をエッチングしてＸ線透過部とＸ線吸収部
の各支持膜の膜厚を異ならしめることを特徴とするＸ線
露光用マスクの製造方法。3. After patterning the thin film of the X-ray absorber of the mask blank in which the thin film of the X-ray absorber is formed on the X-ray transmitting support film, X-rays are respectively applied from the front surface and the back surface of the mask.
A method for manufacturing an X-ray exposure mask, characterized in that the X-ray transmitting support film is etched to make the thickness of each of the X-ray transmitting portions and the X-ray absorbing portion support films different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8069191A JP3013348B2 (en) | 1991-03-19 | 1991-03-19 | X-ray exposure mask and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8069191A JP3013348B2 (en) | 1991-03-19 | 1991-03-19 | X-ray exposure mask and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04290420A JPH04290420A (en) | 1992-10-15 |
| JP3013348B2 true JP3013348B2 (en) | 2000-02-28 |
Family
ID=13725358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8069191A Expired - Fee Related JP3013348B2 (en) | 1991-03-19 | 1991-03-19 | X-ray exposure mask and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3013348B2 (en) |
-
1991
- 1991-03-19 JP JP8069191A patent/JP3013348B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04290420A (en) | 1992-10-15 |
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