JP3013337B2 - Pattern formation method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine processing technique in a manufacturing process of a semiconductor device or the like.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been steadily miniaturized, and a technique for forming a pattern having a design rule of 0.15 μm or less has become necessary. Lithography using an ArF excimer laser (wavelength: 193 nm) has been required. The importance of development is growing. When a conventional chemically amplified resist is used, there is a problem that the practical resolution is low because the depth of focus is small.

Therefore, a surface resolution process is expected to improve the depth of focus. In the surface resolution process, for example, as shown in Macromolecules, Vol. 25, p. 195, a polysiloxane film is selectively formed on the surface of a resist film made of a resist that can generate an acid when exposed. After that, a method of forming a resist pattern by performing dry etching on the resist film using a polysiloxane film as a mask has been proposed.

Hereinafter, a method of forming the resist pattern will be described with reference to FIG.

As a resist capable of generating an acid upon exposure, 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (NISS) and methyl methacrylate (Methyl methacrylate) as shown in [Chemical Formula 1] An example using a copolymer with MMA) will be described.

[0006]

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First, as shown in FIG. 4A, a mask 12 is formed on a resist film 11 formed on a silicon substrate 10 and made of a resist capable of generating an acid when exposed.
When an ArF excimer laser 13 is irradiated using the method, an acid is generated in the exposed portion 11 a of the resist film 11.

Next, when water vapor and vapor 14 of methyltriethoxysilane are introduced into the surface of the resist film 11,
As shown in FIG. 4B, the exposed portion 11 of the resist film 11
In a, the generated acid serves as a catalyst to cause hydrolysis and dehydration condensation of methyltriethoxysilane, and a polysiloxane layer 15 is formed on the surface of the exposed portion 11a.

Next, when the resist film 11 is dry-etched using the O ₂ plasma 16 by using the polysiloxane layer 15 as a mask, as shown in FIG.
In this case, a negative resist pattern 17 is formed.

[0010]

However, in the above-described pattern forming method, the pattern shape of the resist pattern 17 is changed due to the influence of heat during the dry etching by the O ₂ plasma 16 as shown in FIG. There is a problem of deterioration. This is because the glass transition temperature of the resist is as low as about 110 ° C., and the heat resistance of the resist film is low.

A resin made of a copolymer containing methyl methacrylate (MMA) is easy to polymerize, but has a problem of low heat resistance.

In view of the above, it is an object of the present invention to prevent the deterioration of the pattern shape by improving the heat resistance of a resist film composed of a chemically amplified resist.

[0013]

A first pattern forming method according to the present invention comprises a step of applying a chemically amplified resist on a semiconductor substrate to form a resist film, and a step of pattern-exposing the resist film. Supplying a metal alkoxide to the surface of the resist film to form a metal oxide film on the exposed surface of the resist film; and performing dry etching on the resist film using the metal oxide film as a mask to form a resist pattern. The chemical amplification type resist is a polymer including a first group that generates an acid upon exposure and a second group having an aromatic or alicyclic group. Consists of

According to the first pattern forming method, since the polymer constituting the chemically amplified resist contains the first group which generates an acid upon exposure, the first group is decomposed upon pattern exposure to generate an acid. Then, the generated acid acts as a catalyst to selectively form a metal oxide film on the exposed portion of the resist film. Further, since the polymer constituting the chemically amplified resist contains a second group having an aromatic or alicyclic group and having excellent heat resistance, the heat resistance of the resist film is improved.

In the first pattern forming method, the second group is preferably decomposed in an acid atmosphere to become a hydrophilic group.

In the first pattern forming method, the second group is preferably decomposed into a phenolic hydroxyl group in an acid atmosphere.

In the first pattern forming method, the second group is preferably hydrophobic.

In the first pattern forming method, the second group preferably has a benzyl group, an isobornyl group, a norbornyl group, an adamantyl group or a tricyclodecanyl group.

The second pattern forming method according to the present invention comprises:
A step of applying a chemically amplified resist on a semiconductor substrate to form a resist film, a step of pattern-exposing the resist film, and supplying a metal alkoxide to the surface of the resist film to form a surface of an exposed portion of the resist film. A method of forming a metal oxide film on the substrate, and a step of forming a resist pattern by performing dry etching on the resist film using the metal oxide film as a mask. Including crystals.

According to the second pattern formation method, since the chemically amplified resist contains an acid generator that generates an acid upon exposure, an acid is generated from the acid generator upon pattern exposure,
The generated acid serves as a catalyst to selectively form a metal oxide film on the exposed portion of the resist film. Further, since the chemically amplified resist contains a carbon crystal, the heat resistance of the resist film is improved.

In the second pattern forming method, the carbon crystal is preferably made of fullerene.

A third pattern forming method according to the present invention comprises:
A first step of forming a resist film by applying a chemically amplified resist containing an acid generator that generates an acid when exposed to a semiconductor substrate, and a second step of performing pattern exposure on the resist film; A third step of supplying a metal alkoxide to the surface of the resist film to form a metal oxide film on the exposed surface of the resist film, a fourth step of crosslinking the resist film over the entire surface, and a metal oxide film Forming a resist pattern by performing dry etching on the resist film using the mask as a mask.

According to the third pattern formation method, since the chemically amplified resist contains an acid generator that generates an acid upon exposure, an acid is generated from the acid generator upon pattern exposure,
The generated acid serves as a catalyst to selectively form a metal oxide film on the exposed portion of the resist film. Since the resist film is crosslinked, the heat resistance of the resist film is improved.

In the third pattern forming method, the fourth step includes a step of irradiating the entire surface of the resist film with light transmitted through the metal oxide film, and a step of performing a heat treatment on the resist film. It is preferable to include

In the fourth step of the third pattern forming method, the light applied to the resist film is preferably far ultraviolet light or ultraviolet light.

The chemically amplified resist in the third pattern forming method is preferably made of a polymer containing a group that generates an acid upon exposure and a group that is decomposed into a carboxyl group in an acid atmosphere.

According to a fourth pattern forming method of the present invention,
A first step of applying a resist containing an acid generator that generates an acid when exposed to a semiconductor substrate to form a resist film, a second step of pattern-exposing the resist film, Supply metal alkoxide to the surface,
Third step of forming a metal oxide film on the exposed surface of the resist film
A fourth step of irradiating the entire surface of the resist film with a non-metal ion beam to cure the resist film, and a dry etching of the resist film using the metal oxide film as a mask. And a fifth step of forming a resist pattern.

According to the fourth pattern formation method, since the chemically amplified resist contains an acid generator that generates an acid upon exposure, an acid is generated from the acid generator upon pattern exposure,
The generated acid serves as a catalyst to selectively form a metal oxide film on the exposed portion of the resist film. Since the resist film is irradiated with the non-metal ion beam, the resist film is cured and the heat resistance of the resist film is improved.

In the fourth step of the fourth pattern forming method, the ion beam applied to the resist film is preferably an ion beam of hydrogen ions, oxygen ions or carbon ions.

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) Hereinafter, a pattern forming method according to a first embodiment of the present invention will be described with reference to FIGS. 1 (a) to 1 (c).

As a chemically amplified resist material, 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (N
ISS) and a t-butoxycarbonyl group (t-BOC:
A copolymer obtained by dissolving a copolymer with vinylphenol protected with a protecting group) in diglyme was used.

[0032]

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First, as shown in FIG. 1A, after the above-mentioned resist material is spin-coated on a silicon substrate 100, the resist material is heated at a temperature of 90.degree.
By pre-baking for 2 seconds, a resist film 101 having a film thickness of 1 μm was formed. Thereafter, the resist film 10 is irradiated with an ArF excimer laser 103 by using a mask 102.
1 was exposed to the pattern of the mask 102. By doing so, in the exposed portion 101a of the resist film 101,
As shown in [Formula 3], NISS was decomposed to generate sulfonic acid, but no acid was generated in the unexposed portion 101b.

[0034]

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After that, 100 times for the resist film 101
When the heat treatment is performed at a temperature of 60 ° C. for 60 seconds, in the exposed portion 101 a of the resist film 101, as shown in [Chem. Hydroxyl groups were formed.

[0036]

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In the exposed portion 101a of the resist film 101, the hydrophilicity was changed by sulfonic acid generated by pattern exposure, but the degree of hydrophilicity was further increased by phenolic hydroxyl groups generated by heat treatment.

Next, as shown in FIG. 1 (b), at a temperature of 30 ° C., steam and vapor of methyltriethoxysilane 1
04 was supplied to the surface of the resist film 101 to selectively form a polysiloxane layer 105 as a metal oxide film on the exposed portion 101a of the resist film 101. At this time, since the water is selectively absorbed by the exposed portion 101a which has changed to a strong hydrophilicity, the polysiloxane layer 10 has a very high selectivity.
5 could be formed.

Next, as shown in FIG. 1C, the resist film 101 is etched using an O ₂ plasma 106 by using the polysiloxane layer 105 as a mask. Was formed. The etching using the O ₂ plasma 106 was performed using a parallel plate type RIE apparatus under the conditions of 900 W power, 0.7 Pa pressure, and 40 sccm O ₂ gas flow rate.

According to the first embodiment, a chemically amplified resist material having vinyl phenol protected with a t-butoxycarbonyl group (t-BOC) is used, and vinyl phenol is a thermally stable aromatic ring. Since the resist material has many groups, the heat resistance of the resist material is improved. Accordingly, it is possible to prevent the resist film 101 from being deformed by heat during the etching by the O ₂ plasma 106, so that the resist pattern 10 having a good pattern shape can be prevented.
7 can be obtained.

According to the first embodiment, in the exposed portion 101a of the resist film 101, t-BOC is eliminated by the action of sulfonic acid to generate a phenolic hydroxyl group. Since the hydrophilicity contrast with the unexposed portion 101b becomes extremely high, the selectivity of the polysiloxane layer 105 formed on the surface of the exposed portion 101a is improved.

In the first embodiment, the polymer represented by Chemical Formula 2 is used as the chemically amplified resist material. Instead of NISS, another group that generates an acid upon exposure is used. May be used.

Although t-BOC was used as the protecting group, an acetal-based protecting group such as a tetrahydropyranyl group, a 3-oxohexyl group or an ethoxyethyl group may be used instead.

In place of the phenol derivative from which a protecting group is eliminated by the action of an acid, a derivative containing an alicyclic group such as tricyclodecanyl or the like, from which the protecting group is eliminated by the action of an acid, may be used.

Although an ArF excimer laser is used for pattern exposure, an I-ray, a KrF excimer laser, an X-ray, or an electron beam may be used instead.

Although the RIE apparatus is used as the etching apparatus, a high-density plasma apparatus such as an inductively coupled plasma may be used instead. Alternatively, the etching gas may be replaced with O ₂ gas. A gas obtained by adding SO ₂ gas, He gas, or the like to O ₂ gas may be used.

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described. The second embodiment is different from the first embodiment only in the resist material, and the basic process is the same as that of the first embodiment except for the heat treatment. This will be described with reference to FIG.

As the chemically amplified resist material, 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (N
ISS) and a copolymer of methylstyrene dissolved in diglyme were used.

[0049]

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As in the first embodiment, the silicon substrate 1
After spin-coating the above-mentioned resist material on the film No. 00, the resist material was pre-baked at a temperature of 90 ° C. for 90 seconds to form a 1 μm-thick resist film 101. After that, using the mask 102, the resist film 101 is formed.
Was irradiated with an ArF excimer laser 103 to perform pattern exposure, as in the first embodiment, in the exposed portion 101a of the resist film 101, the NISS was decomposed and sulfonic acid was generated.

Next, as shown in FIG. 1 (b), at a temperature of 30 ° C., steam and a vapor of methyltriethoxysilane 1
04 was supplied to the surface of the resist film 101 to selectively form a polysiloxane layer 105 as a metal oxide film on the exposed portion 101a of the resist film 101. At this time, water was selectively absorbed by the exposed portions 101a that changed to hydrophilic, so that the polysiloxane layer 105 could be selectively formed on the exposed portions 101a of the resist film 101.

Next, as shown in FIG. 1C, the resist film 101 is etched using an O ₂ plasma 106 with the polysiloxane layer 105 as a mask. Was formed. The etching using the O ₂ plasma 106 was performed using a parallel plate type RIE apparatus under the conditions of 900 W power, 0.7 Pa pressure, and 40 sccm O ₂ gas flow rate.

According to the second embodiment, a chemically amplified resist material containing methylstyrene is used. Since methylstyrene has many thermally stable aromatic rings, the resist material has a high heat resistance. Has improved. Therefore,
Since the resist film 101 can be prevented from being deformed by heat during etching by the O ₂ plasma 106, the resist pattern 107 having a favorable pattern shape can be prevented.
Can be obtained.

According to the second embodiment, since the chemically amplified resist material having hydrophobic methyl styrene is used, the unexposed portion 101b of the resist film 101 is maintained at a strong hydrophobic property. The polysiloxane layer 105 is not formed on the unexposed portion 101b. Therefore, no residue of the polysiloxane layer 105 remains on the silicon substrate 100 after the formation of the resist pattern 107.

In the second embodiment, the polymer represented by Chemical Formula 5 is used as the chemically amplified resist material. However, instead of NISS, another group that generates an acid upon exposure is used. May be used.

Further, instead of methylstyrene, a hydrophobic group containing an alicyclic group such as an adamantyl group, an isobornyl group, a norbornyl group or a tricyclodecanyl group may be used.

Although an ArF excimer laser is used for pattern exposure, an I-ray, a KrF excimer laser, an X-ray, or an electron beam may be used instead.

Although an RIE apparatus was used as an etching apparatus, a high-density plasma apparatus such as an inductively coupled plasma may be used instead. Alternatively, an O ₂ gas may be used as an etching gas. A gas obtained by adding SO ₂ gas, He gas, or the like to O ₂ gas may be used.

(Third Embodiment) Hereinafter, a third embodiment of the present invention will be described. The third embodiment differs from the first embodiment only in the resist material, and the basic process is the same as that of the first embodiment.
This will be described with reference to (a) to (c).

As a chemically amplified resist material, 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (N
ISS), a polymer of tetrahydropyranylmethyl methacrylate (THPMA) and methylstyrene dissolved in diglyme was used.

[0061]

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As in the first embodiment, the silicon substrate 1
After spin-coating the above-mentioned resist material on the film No. 00, the resist material was pre-baked at a temperature of 90 ° C. for 90 seconds to form a resist film 101 having a thickness of 1 μm. After that, using the mask 102, the resist film 101 is formed.
Was irradiated with an ArF excimer laser 103 to perform pattern exposure, as in the first embodiment, in the exposed portion 101a of the resist film 101, the NISS was decomposed and sulfonic acid was generated.

Next, the resist film 101 is heated at 100 ° C.
In the exposed portion 101a of the resist film 101, THPMA was decomposed by the action of sulfonic acid to generate carboxylic acid at a temperature of 60 ° C. for 60 seconds. In the exposed portion 101a of the resist film 101, the hydrophilicity was changed by sulfonic acid generated by pattern exposure, but the degree of hydrophilicity became higher by carboxylic acid generated by heating.

Next, as shown in FIG. 1 (b), at a temperature of 30 ° C., steam and methyltriethoxysilane vapor 1
04 was supplied to the surface of the resist film 101 to selectively form a polysiloxane layer 105 as a metal oxide film on the exposed portion 101a of the resist film 101. At this time, since the water is selectively absorbed by the exposed portion 101a which has changed to a strong hydrophilicity, the polysiloxane layer 10 has a very high selectivity.
5 could be formed.

Next, as shown in FIG. 1C, when the resist film 101 is etched using the O ₂ plasma 106 with the polysiloxane layer 105 as a mask, a resist pattern 107 having a vertical shape is formed. Was formed. The etching using the O ₂ plasma 106 was performed using a parallel plate type RIE apparatus under the conditions of 900 W power, 0.7 Pa pressure, and 40 sccm O ₂ gas flow rate.

According to the third embodiment, a chemically amplified resist material containing methyl styrene is used. Since methyl styrene has many thermally stable aromatic rings, the heat resistance of the resist material is high. Is improving. Therefore, O
_{(2) Since} deformation of the resist film 101 due to heat during etching by the plasma 106 can be prevented,
The resist pattern 107 having a good pattern shape can be obtained.

According to the third embodiment, in the exposed portion 101a of the resist film 101, THPMA is decomposed by the action of sulfonic acid to generate carboxylic acid, so that the exposed portion 101a of the resist film 101 and the unexposed portion 10
Since the contrast of hydrophilicity with 1b becomes extremely high,
Polysiloxane layer 1 formed on the surface of exposed portion 101a
05 has improved selectivity.

According to the third embodiment, since the chemically amplified resist material having hydrophobic methyl styrene is used, the unexposed portion 101b of the resist film 101 is maintained to be strongly hydrophobic. The polysiloxane layer 105 is not formed on the unexposed portion 101b. Therefore, no residue of the polysiloxane layer 105 remains on the silicon substrate 100 after the formation of the resist pattern 107.

In the third embodiment, the polymer represented by Chemical Formula 6 is used as the chemically amplified resist material. Instead of NISS, another group that generates an acid upon exposure is used. May be used.

Further, T, from which the protecting group is eliminated by the action of an acid,
Instead of HPMA, a group having a 3-oxohexyl group, an isopropyloxy group or an acetal-based protecting group, from which the protecting group is eliminated by the action of an acid may be used.

In place of methylstyrene, a hydrophobic group containing an alicyclic group such as an adamantyl group, an isobornyl group, a norbornyl group or a tricyclodecanyl group may be used.

Although an ArF excimer laser is used for pattern exposure, an I-ray, a KrF excimer laser, an X-ray, or an electron beam may be used instead.

Although the RIE apparatus is used as the etching apparatus, a high-density plasma apparatus such as an inductively coupled plasma may be used instead of the RIE apparatus, and the etching gas may be replaced with O ₂ gas. A gas obtained by adding SO ₂ gas, He gas, or the like to O ₂ gas may be used.

(Fourth Embodiment) Hereinafter, a fourth embodiment of the present invention will be described. The fourth embodiment is different from the first embodiment only in the resist material, and the basic process is the same as that of the first embodiment except for the heat treatment. This will be described with reference to FIG.

As the chemically amplified resist material, 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (N
ISS) and a fullerene C ₆₀ in the copolymer and 5 wt% of methyl methacrylate (MMA) was prepared by dissolving in diglyme.

As in the first embodiment, the silicon substrate 1
After spin-coating the above-mentioned resist material on the film No. 00, the resist material was pre-baked at a temperature of 90 ° C. for 90 seconds to form a 1 μm-thick resist film 101. After that, using the mask 102, the resist film 101 is formed.
Was irradiated with an ArF excimer laser 103 to perform pattern exposure, as in the first embodiment, in the exposed portion 101a of the resist film 101, the NISS was decomposed and sulfonic acid was generated.

Next, as shown in FIG. 1 (b), at a temperature of 30 ° C., steam and vapor of methyltriethoxysilane 1
04 is supplied to the surface of the resist film 101 to selectively expose the polysiloxane layer 1 to the exposed portions 101a of the resist film 101.
05 was formed. At this time, water is selectively absorbed by the exposed portion 101a that has changed to hydrophilic, so that the polysiloxane layer 105 as a metal oxide film can be selectively formed on the exposed portion 101a of the resist film 101. Was.

Next, as shown in FIG. 1C, the resist film 101 is etched using an O ₂ plasma 106 with the polysiloxane layer 105 as a mask, whereby a resist pattern 107 having a vertical shape is formed. Was formed. The etching using the O ₂ plasma 106 was performed using a parallel plate type RIE apparatus under the conditions of 900 W power, 0.7 Pa pressure, and 40 sccm O ₂ gas flow rate.

According to the fourth embodiment, fullerene C ₆₀ is added to a chemically amplified resist material, and since the fullerene C ₆₀ is excellent in heat resistance, the heat resistance of the resist material is improved. . Accordingly, since the resist film 101 can be prevented from being deformed by heat during the etching by the O ₂ plasma 106, the resist pattern 107 having a good pattern shape can be obtained.

In the fourth embodiment, the polymer represented by Chemical Formula 1 was used as the chemically amplified resist material. However, instead of NISS, another group that generates an acid upon exposure is used. May be used.

[0081] Further, although the addition of fullerene C ₆₀ in the resist material of chemical amplification type, instead of this, the fullerene C ₇₀
Alternatively, diamond particles may be added.

Although an ArF excimer laser is used for pattern exposure, an I-ray, a KrF excimer laser, an X-ray, or an electron beam may be used instead.

Although an RIE apparatus was used as the etching apparatus, a high-density plasma apparatus such as an inductively coupled plasma may be used instead. Alternatively, an O ₂ gas may be used as an etching gas. A gas obtained by adding SO ₂ gas, He gas, or the like to O ₂ gas may be used.

(Fifth Embodiment) Hereinafter, a fifth embodiment of the present invention will be described with reference to FIGS. 2 (a) to 2 (d).

As a chemically amplified resist material, 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (N
A copolymer of ISS) and tetrahydropyranylmethyl methacrylate (THPMA) dissolved in diglyme was used.

[0086]

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First, as shown in FIG. 2A, the above-mentioned resist material is spin-coated on a silicon substrate 200, and then the resist material is heated at a temperature of 90.degree.
By pre-baking for 2 seconds, a resist film 201 having a thickness of 1 μm was formed. After that, the resist film 20 is irradiated with an ArF excimer laser 203 using a mask 202.
1 was exposed to the pattern of the mask 202. In this way, in the exposed portion 201a of the resist film 201,
Although the NISS was decomposed to generate sulfonic acid, no acid was generated in the unexposed portion 201b.

Thereafter, the resist film 201 is heated at 90 ° C.
In the exposed portion 201a of the resist film 201, THPMA was decomposed by the action of sulfonic acid to produce carboxylic acid at a temperature of 60 seconds for 60 seconds. At this time, in the exposed portion 101a of the resist film 101,
The hydrophilicity was changed by sulfonic acid generated by pattern exposure, but the degree of hydrophilicity was increased by carboxylic acid generated by heat treatment.

Next, as shown in FIG. 2 (b), at a temperature of 30 ° C., steam and methyltriethoxysilane vapor 2
04 was supplied to the surface of the resist film 201, and a polysiloxane layer 205 as a metal oxide film was selectively formed on the exposed portion 201a of the resist film 201.

Next, as shown in FIG. 2C, a Deep UV having a center wavelength of 254 nm using a mercury lamp.
After irradiating the entire surface of the resist film 201 with light 206, the resist film 201 was subjected to a heat treatment at 110 ° C. for 2 minutes to crosslink the resist film 207 over the entire surface. Since the deep UV light 206 has a long wavelength, the resist film 207 is cross-linked over the entire surface.

The crosslinking reaction at this time is as shown in [Formula 8]. That is, when the resist film 201 is irradiated with the Deep UV light 206 over the entire surface, a first reaction occurs, the NISS is decomposed to generate sulfonic acid, and then, when the resist film 201 is heated, the second reaction occurs. Then, the action of sulfonic acid decomposed THPMA to generate carboxylic acid. At this time, since heating is performed at a high temperature of 100 ° C. or more, the third reaction occurs continuously, and the carboxylic acid undergoes a cross-linking reaction with another carboxylic acid present in the vicinity thereof to generate a polymer.

[0092]

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Next, as shown in FIG. 2D, the cross-linked resist film 207 is etched using the polysiloxane layer 205 as a mask and using O ₂ plasma 208 to obtain a resist having a vertical shape. A pattern 209 was formed. Etching by O ₂ plasma 106
Using a parallel plate type RIE device, the power is 900W,
The etching was performed under a pressure of 0.7 Pa and an O ₂ gas flow rate of 40 sccm.

According to the fifth embodiment, since the resist film 201 is cross-linked after the polysiloxane layer 205 is formed, the heat resistance of the chemically amplified resist material is improved. Accordingly, since the resist film 207 can be prevented from being deformed by heat during etching by the O ₂ plasma 208, a resist pattern 209 having a good pattern shape can be obtained.

In the fifth embodiment, [Formula 7]
Was used, but instead of THPMA, 3
-Having an oxohexyl group, an isopropyloxy group or an acetal-based protecting group, a group in which the protecting group is eliminated by the action of an acid to generate a carboxylic acid, or a chemically amplified type having an epoxy group or the like; A resist material may be used.

Although an ArF excimer laser is used for pattern exposure, an I-ray, a KrF excimer laser, an X-ray, or an electron beam may be used instead.

In order to cause a crosslinking reaction, 25
Deep UV light having a center wavelength of 4 nm is applied to the resist film 2
However, instead of this, light consisting of I-line or g-line may be applied.

Although the RIE apparatus was used as the etching apparatus, a high-density plasma apparatus such as an inductively coupled plasma may be used instead of the RIE apparatus, and the etching gas may be replaced with O ₂ gas. A gas obtained by adding SO ₂ gas, He gas, or the like to O ₂ gas may be used.

(Sixth Embodiment) Hereinafter, a sixth embodiment of the present invention will be described with reference to FIGS.

The chemically amplified resist material includes 1,2,3,4-tetrahydronaphthylideneimino-p-styrenesulfonate (NISS) represented by the following chemical formula (1).
A copolymer of methacrylic acid and methyl methacrylate (MMA) dissolved in diglyme was used.

First, as shown in FIG. 3A, the above-mentioned resist material is spin-coated on a silicon substrate 300, and then the resist material is heated at a temperature of 90.degree.
By pre-baking for 2 seconds, a resist film 301 having a thickness of 1 μm was formed. After that, the resist film 30 is irradiated with an ArF excimer laser 303 using the mask 302.
1, the pattern of the mask 302 was exposed. By doing so, in the exposed portion 301a of the resist film 301,
Although the NISS was decomposed to generate sulfonic acid, no acid was generated in the unexposed portion 301b.

Next, as shown in FIG. 3 (b), at a temperature of 30 ° C., steam and vapor of methyltriethoxysilane 3
04 was supplied to the surface of the resist film 301, and a polysiloxane layer 305 as a metal oxide film was selectively formed on the exposed portion 301a of the resist film 301.

Next, as shown in FIG. 3C, a hydrogen ion beam 306 is applied to the resist film 30 at an acceleration voltage of 50 keV.
Irradiation was performed on the entire surface of No. 1 to cure the resist film 307.

Next, as shown in FIG. 3D, the cross-linked resist film 307 is etched using the polysiloxane layer 305 as a mask and using O ₂ plasma 308 to obtain a resist having a vertical shape. A pattern 309 was formed. Etching by O ₂ plasma 106
Using a parallel plate type RIE device, the power is 900W,
The etching was performed under a pressure of 0.7 Pa and an O ₂ gas flow rate of 40 sccm.

According to the sixth embodiment, since the resist film 301 is irradiated with the hydrogen ion beam 306 after forming the polysiloxane layer 305, the resist film 307 becomes dense and hardened. The heat resistance of the material is improved. Accordingly, since the resist film 307 can be prevented from being deformed by heat during etching by the O ₂ plasma 308, a resist pattern 309 having a good pattern shape can be obtained.

Although the resist film 301 is irradiated with the hydrogen ion beam 306 in the sixth embodiment, another non-metal ion beam may be irradiated instead.

Although the ArF excimer laser is used for pattern exposure, an I-ray, a KrF excimer laser, an X-ray, or an electron beam may be used instead.

Although the RIE apparatus was used as the etching apparatus, a high-density plasma apparatus such as an inductively-coupled plasma may be used instead, and the etching gas may be replaced with O ₂ gas. A gas obtained by adding SO ₂ gas, He gas, or the like to O ₂ gas may be used.

[0109]

According to the first pattern forming method, the polymer constituting the chemically amplified resist contains a second group having an aromatic or alicyclic group and having excellent heat resistance, and the heat resistance of the resist film is improved. Even if a resist pattern is formed by performing dry etching using a metal oxide film as a mask, the resist pattern does not deform due to heat, so that the aspect ratio is high and a rectangular cross section is formed. Is obtained.

In the first pattern forming method, when the second group is decomposed in an acid atmosphere to become a hydrophilic group, the exposed portion of the resist film changes to hydrophilic and easily absorbs water. The selectivity of the metal oxide film formed on the exposed portion of the film is improved.

In the first pattern forming method, when the second group is decomposed into a phenolic hydroxyl group in an acid atmosphere, the exposed portion of the resist film is exposed to the first group by pattern exposure.
Since the acid generated from the group and the phenolic hydroxyl group generated by the decomposition of the second group in an acid atmosphere are present, the exposed portion of the resist film greatly changes to hydrophilicity and easily absorbs water. Therefore, the selectivity of the metal oxide film formed on the exposed portion of the resist film is further improved.

In the first pattern forming method, when the second group is hydrophobic, the unexposed portion of the resist film is hydrophobic and does not absorb water. Since no film is formed, it is possible to prevent a situation in which a residue made of a metal oxide film is generated on the substrate on which the resist pattern is formed.

In the first pattern forming method, when the second group has a benzyl group, an isobornyl group, a norbornyl group, an adamantyl group or a tricyclodecanyl group, the unexposed portion of the resist film is strongly hydrophobic. Moreover, it is possible to reliably prevent a situation in which a residue made of a metal oxide film is generated on the substrate on which the resist pattern is formed.

According to the second pattern formation method, since the chemically amplified resist contains carbon crystals and the heat resistance of the resist film is improved, dry etching is performed using the metal oxide film as a mask. Even if a resist pattern is formed, a pattern having a high aspect ratio and a rectangular cross section can be obtained because the resist pattern does not deform due to heat.

In the second pattern forming method, when the carbon crystal is made of fullerene, the heat resistance of the resist film is further improved and a uniform resist film can be formed.

According to the third pattern formation method, since the resist film is cross-linked and the heat resistance of the resist film is improved, dry etching is performed using the metal oxide film as a mask to form a resist pattern. Also, since the resist pattern is not deformed by heat, a pattern having a high aspect ratio and a rectangular cross section can be obtained.

In the third pattern forming method, when the fourth step includes a step of irradiating the resist film with light and a step of performing a heat treatment on the resist film, the crosslinking reaction to the resist film is ensured. Can be awakened.

In the fourth step of the third pattern forming method, when the light irradiated to the resist film is far ultraviolet light or ultraviolet light, a cross-linking reaction can be reliably caused in the resist film.

When the chemically amplified resist in the third pattern formation method is made of a polymer containing a group that generates an acid upon exposure and a group that is decomposed into a carboxyl group in an acid atmosphere, the resist film is crosslinked. The reaction can be reliably caused.

According to the fourth pattern forming method, the resist film is cured by irradiating the resist film with a non-metallic ion beam, and the heat resistance of the resist film is improved. Even if a resist pattern is formed by performing dry etching, a pattern having a high aspect ratio and a rectangular cross section can be obtained because the resist pattern does not deform due to heat.

In the fourth step of the fourth pattern forming method, when the ion beam irradiated on the resist film is an ion beam of hydrogen ions, oxygen ions or carbon ions, the resist film is removed to such an extent that the resist film can be removed by etching. Since it can be cured, the heat resistance of the resist film is improved.

[Brief description of the drawings]

FIGS. 1A to 1C are cross-sectional views showing respective steps of a pattern forming method according to first to fourth embodiments of the present invention.

FIGS. 2A to 2D are cross-sectional views showing each step of a pattern forming method according to a fifth embodiment of the present invention.

FIGS. 3A to 3D are cross-sectional views illustrating respective steps of a pattern forming method according to a sixth embodiment of the present invention.

FIGS. 4A to 4C are cross-sectional views showing steps of a conventional pattern forming method.

[Explanation of symbols]

100 silicon substrate 101 the resist film 101a exposed portion 101b unexposed portion 102 mask 103 ArF excimer laser 104 water vapor and steam 105 polysiloxane layer of methyltriethoxysilane 106 O ₂ plasma 107 resist pattern 200 silicon substrate 201 the resist film 201a exposed portion 201b Not exposure unit 202 mask 203 ArF steam 205 polysiloxane layer of the excimer laser 204 steam and methyltriethoxysilane 206 Deep UV light 207 cross-linked resist film 208 O ₂ plasma 209 resist pattern 300 silicon substrate 301 the resist film 301a exposed portion 301b unexposed portion 302 Mask 303 ArF excimer laser 304 Water vapor and vapor of methyltriethoxysilane 305 Polysiloxy Sun layer 306 Hydrogen ion beam 307 Hardened resist film 308 O ₂ plasma 309 Resist pattern

──────────────────────────────────────────────────続 き Continuation of the front page (51) Int.Cl. ⁷ identification code FI H01L 21/3065 H01L 21/30 568 21/302 H (58) Field surveyed (Int.Cl. ⁷ , DB name) G03F 7 / 039 G03F 7/004 G03F 7/36 G03F 7/38 H01L 21/027 H01L 21/3065

Claims (13)

(57) [Claims] A step of applying a chemically amplified resist on a semiconductor substrate to form a resist film, a step of pattern-exposing the resist film, and supplying a metal alkoxide to a surface of the resist film; Forming a metal oxide film on the surface of the exposed portion of the resist film, and using the metal oxide film as a mask, the resist film containing oxygen.
Forming a resist pattern by performing dry etching with plasma using a gas , wherein the chemically amplified resist has a first group that generates an acid upon exposure, and a hydrophobic group having an aromatic or alicyclic group. Sex second
A pattern forming method comprising a polymer containing 2. The pattern forming method according to claim 1, wherein the second group is decomposed in an acid atmosphere to become a hydrophilic group. 3. The pattern forming method according to claim 1, wherein the second group is decomposed into a phenolic hydroxyl group in an acid atmosphere. 4. The pattern forming method according to claim 1, wherein the second group has a benzyl group . 5. The pattern forming method according to claim 1, wherein the second group has an isobornyl group , a norbornyl group, an adamantyl group, or a tricyclodecanyl group. 6. A step of applying a chemically amplified resist containing an acid generator that generates an acid when exposed to light on a semiconductor substrate to form a resist film, and a step of pattern-exposing the resist film. Supplying a metal alkoxide to the surface of the resist film to form a metal oxide film on the surface of the exposed portion of the resist film; and supplying a gas containing oxygen to the resist film using the metal oxide film as a mask. Use
And forming a resist pattern by dry etching by plasma, the chemically amplified resist, a pattern forming method, which comprises a crystal of carbon. 7. The pattern forming method according to claim 6, wherein the carbon crystal is made of fullerene. 8. A first step of applying a chemically amplified resist containing an acid generator that generates an acid when exposed to a semiconductor substrate to form a resist film, and pattern-exposing the resist film. A second step, supplying a metal alkoxide to the surface of the resist film;
A third step of forming a metal oxide film on the surface of the exposed portion of the resist film, a fourth step of cross-linking the resist film over the entire surface, and using the metal oxide film as a mask for the resist film. , by plasma using a gas containing oxygen fifth of forming a resist pattern by dry-etching
Pattern forming method comprising the steps of:
Law. 9. The fourth step includes a step of irradiating the entire surface of the resist film with light transmitted through the metal oxide film, and a step of performing a heat treatment on the resist film. The pattern forming method according to claim 8, wherein: 10. The pattern forming method according to claim 9, wherein the light irradiated on the resist film in the fourth step is far ultraviolet light or ultraviolet light. 11. The chemical amplification type resist according to claim 9, wherein the chemically amplified resist comprises a polymer containing a group that generates an acid upon exposure and a group that is decomposed in an acid atmosphere to become a carboxyl group. Pattern formation method. 12. A first step of applying a chemically amplified resist containing an acid generator that generates an acid when exposed to a semiconductor substrate to form a resist film, and pattern-exposing the resist film. A second step, supplying a metal alkoxide to the surface of the resist film;
A third step of forming a metal oxide film on the surface of the exposed portion of the resist film; and irradiating the resist film with a non-metallic ion beam over the entire surface, thereby curing the resist film over the entire surface. A fourth step of forming a resist pattern by performing dry etching on the resist film using the metal oxide film as a mask with the plasma using a gas containing oxygen to form a resist pattern. Characteristic pattern formation method. 13. The pattern forming method according to claim 12, wherein the ion beam applied to the resist film in the fourth step is an ion beam of hydrogen ions, oxygen ions, or carbon ions.