JP3008176B2 - Plasma processing method and processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and a plasma processing apparatus, and more particularly to a plasma processing method and a plasma processing apparatus capable of forming a film quickly and uniformly on a material to be processed in a single plasma processing chamber. The present invention relates to a plasma processing method and a processing apparatus that can be used.

[0002]

2. Description of the Related Art Conventionally, Japanese Patent Application Laid-Open No. Hei 3-120362 discloses that two processes are performed by one processing device. In this processing apparatus, a plurality of processing chambers are continuously arranged, a material to be processed is transported from one processing apparatus to the other, and each processing is performed for each processing chamber on the way.

Another device is disclosed in Japanese Patent Application Laid-Open No. 3-978.
No. 62 is known. In this device, an intermediate vacuum tank is provided between the inlet tank and the outlet tank, and a film forming processing tank is provided on both sides of the intermediate vacuum tank, and a material to be processed is carried into and out of each film forming processing tank from the intermediate vacuum tank. I am trying to do it.

[0004]

The former apparatus can perform a film forming process while moving a material to be processed, so that a uniform film can be formed on the material to be processed. However, when it is desired to increase the film thickness of the material to be processed, it is necessary to finish the film in one layer if the processing is performed in one processing chamber. Depending on the type of film formation, it may be faster to finish with multiple layers to obtain the same film thickness. In this apparatus, a plurality of film forming chambers are required for multi-layer finishing, and furthermore, it is necessary to provide an inlet chamber and an outlet chamber before and after each film forming chamber in order to transport the material to be processed in one direction. Becomes longer.

[0005] In the latter apparatus, since the film forming process is performed while the material to be processed is stopped, a uniform film cannot be formed on the material to be processed. In addition, when a film is formed with a plurality of layers, a plurality of processing chambers are required, and there is a problem that the entire processing apparatus becomes long.

Further, each apparatus requires an individual processing chamber for performing each processing, and further requires a vacuum pump, a power supply, piping, and the like, resulting in an increase in cost.

It is an object of the present invention to provide a plasma processing method capable of realizing a multi-layer or a plurality of film forming processes with a processing apparatus having one plasma processing chamber.

Another object of the present invention is to provide a plasma processing apparatus suitable for the plasma processing method.

[0009]

According to the present invention, a plasma processing chamber is provided adjacent to a transfer chamber having a transfer section for reciprocating a material to be processed between one end and the other end of the chamber, The workpiece moved by the transfer unit can be subjected to plasma processing, and a plurality of hearths are provided in the plasma processing chamber.
Different deposition materials are stored in each hearth, and the
The material to be processed moving in one direction due to the different
Film formation using any one of the evaporation materials
The workpiece to be moved in the opposite direction by the transport unit
One of the different deposition materials with respect to the one deposition material
A plasma processing method characterized by performing a film forming process using a deposition material different from the above.

[0010] Further, adjacent to one end of the transfer chamber,
Providing a handling chamber provided with a handling device for transferring the material to be transferred to and from the transport unit, providing an entrance / exit chamber for taking the material in and out adjacent to the handling chamber, Thus, the transfer of the material to be processed between the entrance room and the transfer chamber may be performed.

A heating chamber for the material to be processed is further provided adjacent to the handling chamber, and after the material to be processed is heated in the heating chamber, the material is transferred to the transfer chamber by the handling device for processing. May be.

According to the present invention, a transfer chamber provided with a transfer section for reciprocating a material to be processed between one end and the other end of the chamber, and a plasma processing chamber provided adjacent to the transfer chamber When, and a doorway chamber for provided adjacent to the transfer chamber performs out of the workpiece, the plasma treatment
The science room has an opening in the upper part that can communicate with the transfer chamber.
And the object moved by the transport unit through the opening.
Before the plasma treatment can be performed on the material
The transfer unit is provided at a lower portion of the transfer chamber,
The reciprocation through the upper opening of the plasma processing chamber
A transfer table for loading the workpiece to be moved,
The work piece is exposed on the table toward the plasma processing chamber.
Thus , a plasma processing apparatus characterized by having an opening for causing the plasma processing apparatus to be provided.

It is preferable that a handling chamber provided with a handling device for transferring the material to be processed between the entrance / exit chamber and the transfer chamber is provided.

Further, a heating chamber for the material to be processed may be further provided adjacent to the handling chamber.

According to the present invention, further, a transfer chamber provided with a transfer section for reciprocating a material to be processed between one end and the other end of the chamber, and a plasma processing chamber provided adjacent to the transfer chamber A handling chamber provided adjacent to the transfer chamber and provided with a handling device for transferring the material to be processed, and provided adjacent to the handling chamber in a direction perpendicular to the transfer chamber. Including an inlet chamber and an outlet chamber provided on the opposite side of the handling chamber from the inlet chamber,
The upper part of the plasma processing chamber can communicate with the transfer chamber
Has a functional opening, and is moved by the transport unit through the opening.
Plasma processing can be performed on the material to be processed.
The lower part of the transfer chamber is provided so that the
The sending section passes through the upper opening portion of the plasma processing chamber
The transfer table for loading the material to be processed performing the reciprocating movement
The transfer table is provided on the transfer table toward the plasma processing chamber.
A plasma processing apparatus having an opening for exposing the processing material is provided .

The handling chamber and the entrance chamber,
At least one of the processing chambers may be provided between the outlet chamber and the processing chamber.

Further, it is preferable that a gripping device for transferring the material to be processed from the handling device to the transport unit is provided in the transport chamber.

It is preferable that the handling device can be moved up and down in the handling room.

Further, the entrance room may be provided with a multistage shelf which can be moved up and down.

[0020]

FIG. 1 is an overall front view of a plasma processing apparatus according to the present invention, and FIG. 2 is a plan view of FIG. In this example, the plasma processing apparatus 1 includes a doorway chamber 1 for a material to be processed.
0, a material handling chamber 20, a material heating chamber 30, a material transfer chamber 40, a material deposition chamber 60,
That is, it has a plasma processing chamber. Gate valves 2, 3 for shutting off each chamber are provided between each chamber.
4 are provided to provide a sealable structure. Although not shown, a vacuum pump for evacuating each chamber is connected to each of them. Doorway room 10,
The handling chamber 20, the heating chamber 30, and the transfer chamber 40 are supported by gantry 5, 6, 7, 8 respectively.

FIG. 3 is a plan sectional view of the handling chamber 20 and its surroundings. The entrance room 10 includes an entrance room main body 11.
And an opening 12 provided on the handling room 20 side of the entrance / exit chamber main body 11, a mounting table 13 for mounting the processing target material 9,
An opening 14 for carrying in and out the workpiece 9 and a door 15 for opening and closing the opening 14 are provided.

The handling room 20 includes a handling room main body 21 and the entrance / exit room 10 of the handling room main body 21.
Openings 22, 23, and 24 provided on the side, the heating chamber 30 side, and the transfer chamber 40 side, respectively, and a robot 25 for transferring the workpiece 9. The robot 25 supports a lower arm 26 pivotally supported by the handling chamber main body 21, an upper arm 27 pivotally supported by a tip of the lower arm 26, and a workpiece 9 supported by a distal end of the upper arm 27. Stand 28
And a motor 29 for driving the lower arm 26 and the upper arm 27, respectively. Note that the robot 25 may be of a type in which the arm expands and contracts. Further, the whole may be raised and lowered.

The heating chamber 30 includes a heating chamber main body 31 and an opening 3 provided on the handling chamber 20 side of the heating chamber main body 31.
2, a mounting table 33 on which the processing target material 9 is mounted, and a heating source (not shown).

FIG. 4 is an enlarged front sectional view of the transfer chamber 40 and the film forming chamber 60, FIG. 5 is a sectional view taken along the arrow A in FIG. 4, and FIG.
It is arrow sectional drawing. The transfer chamber 40 includes a transfer chamber main body 41,
An opening 42 provided on the handling chamber 20 side of the transfer chamber main body 41, a traveling rail 43 provided over substantially the entire length in the longitudinal direction of the transfer chamber main body 41,
A carriage 44 running above, a chain (or belt) 45 for moving the carriage 44, a bracket 46 connecting the chain 45 and the carriage 44, a sprocket 47 engaging with the chain 45, and driving the sprocket 47 A variable speed motor 48, a sprocket shaft 49, and a plurality of claws 50 provided on the carriage 44 for locking the workpiece 9 placed thereon. Note that an opening 51 is formed in a region corresponding to the mounting surface of the workpiece 9 of the transport carriage 44. This is for exposing the material to be processed 9, particularly the lower surface side, on the transport carriage 44 to the film forming chamber 60.

Further, the handling chamber 2 of the transfer chamber body 41
On the 0 side, there is provided a device for transferring the material to be processed 9 between the robot 25 and the transport carriage 44. The transfer device includes a gripper 52 for handling the workpiece 9.
A guide rod 53 for supporting the gripper 52; a guide 54 for guiding the guide rod 53;
And a cylinder mechanism 56 for moving the gripper 52 up and down. An opening 57 is formed on the lower surface of the intermediate portion in the longitudinal direction of the transfer chamber main body 41.

The film forming chamber 60 includes a vacuum vessel 61 and an opening 62 formed on the upper surface thereof, a plasma gun 63 provided on the side wall of the vacuum vessel 61, and a support table 64 on the lower surface of the vacuum vessel 61. And a main hearth 65 provided.

The illustrated film forming chamber 60 is an example of an ion plating apparatus, the details of which will be described with reference to FIG. A pressure gradient type plasma gun 63 is mounted on a cylindrical portion 112 provided on a side wall of the vacuum vessel 61. The plasma gun 63 includes a glass tube 115 whose one end is closed by a cathode 114. In this glass tube 115, a disk 116 made of LaB ₆ and a cylinder 118 made of molybdenum Mo containing a pipe 117 made of tantalum Ta
Are fixed to the cathode 114. The pipe 117 is for introducing a carrier gas 118 made of an inert gas such as argon Ar or helium He into the plasma gun 63.

The first and second intermediate electrodes 1 are provided between the cylindrical portion 112 and the end of the glass tube 115 opposite to the cathode 114.
19 and 120 are arranged concentrically. In the first intermediate electrode (first grid) 119, an annular permanent magnet 121 for focusing a plasma beam is incorporated. An electromagnet coil 122 for focusing a plasma beam is also built in the second intermediate electrode 120 (second grid). The electromagnet coil 122 is supplied with power from a power supply 123.

The cylindrical part 11 on which the plasma gun 63 is mounted
2, a steering coil 124 for guiding the plasma beam into the vacuum chamber 61 is provided. This steering coil 124 is a power supply 1 for the steering coil.
25 is excited. A drooping resistor 1 is provided between the cathode 114 and the first and second intermediate electrodes 119 and 120, respectively.
A variable voltage type main power supply 128 is connected through 26 and 127.

At the bottom inside the vacuum vessel 61, a main hearth 65 and an annular auxiliary hearth 131 arranged around the main hearth 65 are provided. The main hearth 65 has a concave portion into which the plasma beam from the plasma gun 63 is incident, and stores an evaporating substance such as an ITO (indium oxide) tablet.

The main hearth 65 and the auxiliary hearth 131 are made of a conductive material having good thermal conductivity, for example, copper. The auxiliary hearth 131 is attached to the main hearth 65 via an insulator. The main hearth 65 and the auxiliary hearth 131 are connected via a resistor 148. The main hearth 65 is connected to the positive side of the main power supply 128. Therefore, the main hearth 65 constitutes an anode from which the plasma beam is sucked to the plasma gun 63.

An annular permanent magnet 13 is provided in the auxiliary hearth 131.
5 and an electromagnet coil 136 are housed therein, and are supplied with power from a hearth coil power supply 138. In this case, the direction of the center-side magnetic field in the excited electromagnet coil 136 is configured to be the same as the center-side magnetic field generated by the annular permanent magnet 135. The hearth coil power supply 138 is a variable power supply, and can change the current supplied to the electromagnet coil 136 by changing the voltage. The transport cart 44 is
The vacuum vessel 61 is electrically insulated and supported.
A bias power source 1 is provided between the vacuum vessel 61 and the transport carriage 44.
45 are connected. As a result, the transport vehicle 44
Is biased to a negative potential with respect to the vacuum vessel 61 connected to zero potential.

The auxiliary hearth 131 is connected to the positive side of the main power supply 128 via a hearth switch 146. The main power supply 128 has a drooping resistor 129 in parallel with it.
And the auxiliary discharge power supply 147 are connected via the switch S1.

In this ion plating apparatus, in the case of film formation, a discharge is generated between the cathode of the plasma gun 63 and the main hearth 65 in the vacuum vessel 61, thereby generating a plasma beam (not shown). Generate. This plasma beam reaches the main hearth 65 while being guided by a magnetic field determined by the steering coil 124 and the annular permanent magnet 135 in the auxiliary hearth 131. The evaporating substance stored in the main hearth 65 is heated by the plasma beam and evaporates. These vaporized particles are ionized by the plasma beam, adhere to the surface of the processing target material 9 to which the negative voltage is applied, and form a coating.

The material to be processed 9 such as a glass plate having a resin-based coating applied to a color filter or the like is placed on the transport carriage 44, and the vacuum vessel 61 is evacuated. If the material to be processed 9 needs to be heated, it is heated in the heating chamber 30. After the vacuum vessel 61 is evacuated to the processing pressure, the electromagnet coils 122, 136,
A set current is applied to the steering coil 124 to turn off the switch 146, and the carrier gas 1
18 is caused to flow into the vacuum chamber 61, and discharge is performed between the main hearth 65 and the plasma gun 63. As a result, the auxiliary hearth 131 becomes an intermediate electrode lifted by the resistor 148, the discharge current flows into the main hearth 65, and the evaporating substance set on the main hearth 65 is vaporized, and the vacuum vessel 6
Excitation, ionization, heating, and the like are performed by the plasma existing in 1, and a film is formed on the workpiece 9.

The specific operation of the device of the present invention will be described. Handling room 20, heating room 30, transfer room 4
0, the film forming chamber 60 is evacuated. The material to be processed 9 is carried into the entrance room 10 through the door 15 of the entrance room 10 and is placed on the mounting table 13. After that, the entrance room 10 is evacuated,
The gate valve 2 is opened and the workpiece 9 is handled by the robot 25. After loading the workpiece 9 into the handling chamber 20, the gate valve 2 is closed and the gate valve 3 is opened, and the workpiece 9 is placed in the heating chamber 30. After the gate valve 3 is closed and the workpiece 9 is heated, the gate valve 3 is opened, the workpiece 9 is taken out by the robot 25, the gate valve 3 is closed, the gate valve 4 is opened, and the workpiece is opened. 9 is attached to the gripper 52. Thereafter, the gate valve 4 is closed, and the workpiece 9 is placed on the claw 50 of the transport carriage 44 from the gripper 52. Thereafter, the transport vehicle 44 travels and moves to the other end. At this time, a film forming process (ion plating) is performed on the surface of the processing target material 9 by the plasma gun 63. When the transport carriage 44 moves from the other end to the handling chamber 20 side, a film forming process of a second layer is performed on the processing target material 9. Depending on the film thickness, the carrier 44 is reciprocated a plurality of times to perform a multilayer film forming process on the surface of the processing target material 9. Further, it is possible to improve the film forming speed by changing the moving speed of the transport carriage 44 for each layer. Thereafter, the workpiece 9 is moved from the carrier 44 to the gripper 5.
The robot 25 is conveyed from the robot 25 to the entrance / exit chamber 10 through the second path.

As described above, in the plasma processing apparatus according to the present invention, since a multi-layer film is formed on the material to be processed by one film forming apparatus, the apparatus is compact and the cost is reduced.

In the present invention, as a film forming apparatus, sputtering and CVD can be performed in addition to ion plating. Further, examples of the material to be processed include a glass and a resin (plastic) plate.

A plurality of, for example, 2
A plurality of main hearths 65 are provided, different evaporation materials are stored in the two main hearths, and when the transport cart 44 travels in one direction, one of the evaporation materials is formed into a film on the surface of the processing target material 9,
When the transport trolley 44 travels in the other direction, the other deposition material may be formed on the surface of the material 9 to be processed.

Further, the entrance room 10 may be dedicated to the entrance room, and an exit room may be separately provided adjacent to the handling room 20.

In the type in which the arms 26 and 27 of the robot 25 move up and down, the gripper 52 is not required. In this case, by providing the mounting table 13 of the entrance / exit chamber 10 in a plurality of stages, it is possible to efficiently transfer the workpiece 9 to / from each chamber. For example, if the material to be processed 9 before processing is placed on the upper stage, the material to be processed 9 before processing can be handled after placing the material to be processed 9 on the lower stage.

As shown in FIG. 8, an elevating shelf 81 on which the workpieces 9 can be placed in multiple stages may be provided in the entrance / exit chamber 80, and the elevating shelf 81 may be moved up and down by a cylinder mechanism 82. In this case, the processing target material 9 stored in the lifting shelf 81 can be continuously processed, and the gripper 52 is not required. 83 is a door.

Further, as shown in FIG. 9, a transfer chamber 40 is provided via a handling chamber 20 in an entrance / exit chamber 80 in which the material to be processed 9 can be placed in a vertically movable manner. A temporary storage room 100 having substantially the same structure as the entrance room 80 for temporarily storing the processing target material 9 via the handling room 90 is provided. In this processing apparatus, the material to be processed from the entrance / exit chamber 80 is continuously carried into the transfer chamber 40, and the material to be processed 9 is continuously formed. It is stored in the temporary storage room 100 via the robot in the room 90. When the film forming process is completed for all the materials 9 to be processed, the materials 9 to be processed are continuously sent from the temporary storage chamber 100 to the transfer chamber 40 to perform another film forming process.

Further, as shown in FIG.
The inlet chamber 150 and the outlet chamber 160 may be provided adjacent to the handling chamber 20 in a direction perpendicular to the transport direction of the material 9 to be processed, or the chambers 150 and 160 may be respectively provided in a processing chamber (heating or sputtering chamber or the like). ) And processing chamber 150
May be provided adjacent to the processing chamber 160, and an outlet chamber 180 may be provided adjacent to the processing chamber 160. In this processing apparatus, the material to be processed 9 is caused to flow from the inlet chamber to the outlet chamber, and the material to be processed 9 is carried into the transfer chamber 40 and processed only when the plasma processing is performed on the material to be processed 9.

[0045]

As described above, according to the plasma processing method and apparatus of the present invention, it is possible to form a plurality of layers and a plurality of different films on a material to be processed by one film forming apparatus. Therefore, the apparatus can be made compact and the cost can be reduced.

[Brief description of the drawings]

FIG. 1 is an overall front view of a plasma processing apparatus according to the present invention.

FIG. 2 is a plan view of the apparatus of FIG.

FIG. 3 is a plan sectional view of the handling chamber shown in FIG. 1 and its surroundings.

FIG. 4 is an enlarged front sectional view of a transfer chamber and a film forming chamber shown in FIG.

FIG. 5 is a sectional view taken along the arrow A in FIG. 4;

FIG. 6 is a sectional view taken along the arrow B in FIG. 4;

FIG. 7 is a longitudinal sectional view of an ion plating apparatus as a film forming chamber used in the present invention.

FIG. 8 is a cross-sectional view for explaining another example of the entrance room.

FIG. 9 is a plan view showing another example of the plasma processing apparatus according to the present invention.

FIG. 10 is a plan view showing still another example of the plasma processing apparatus according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Plasma processing apparatus 10 Doorway room 20 Handling room 30 Heating room 40 Transfer room 60 Deposition room

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-6-330293 (JP, A) JP-A-7-221035 (JP, A) JP-A-6-69316 (JP, A) JP-A 64-64 67909 (JP, A) Japanese Utility Model 7-36441 (JP, U) Japanese Utility Model 63-54929 (JP, U) Japanese Patent Publication No. 51-20356 (JP, B2) (58) Field surveyed (Int. ⁷ , DB name) C23C 14/00-14/58 C23C 16/00-16/56 H01L 21/205 H01L 21/68

Claims (12)

(57) [Claims] 1. A plasma processing chamber is provided adjacent to a transfer chamber provided with a transfer unit for reciprocating a target material between one end and the other end of the chamber, and the target material moved by the transfer unit. Can be subjected to plasma processing, and multiple
Different number of hearths and different deposition materials for each hearth
And the transfer unit moves in one direction by the transfer unit.
Any one of the different deposition materials for the base material
Film forming process, and transfer in the opposite direction by the transport unit.
Of the different deposition materials for the moving workpiece
A plasma processing method, wherein a film formation process is performed using a deposition material different from the one deposition material . 2. A handling chamber provided with a handling device for transferring the workpiece to the transport unit is provided adjacent to one end of the transport chamber, and the handling chamber is provided adjacent to the handling chamber. 2. The plasma processing method according to claim 1, wherein an entrance / exit chamber for carrying in / out of the processing material is provided, and the material to be processed is transferred between the entrance / exit chamber and the transfer chamber by the handling device. . 3. A heating chamber for the material to be processed is further provided adjacent to the handling chamber, and after the material to be processed is heated in the heating chamber, the material is transferred to the transfer chamber by the handling device to perform processing. 3. The plasma processing method according to claim 2, wherein: 4. A transfer chamber having a transfer section for reciprocating a material to be processed between one end and the other end of the chamber; a plasma processing chamber provided adjacent to the transfer chamber; An inlet / outlet chamber provided adjacently to carry in and out the material to be processed, wherein the plasma processing chamber can communicate with the transfer chamber at an upper portion thereof
Has a functional opening, and is moved by the transport unit through the opening.
Plasma processing can be performed on the material to be processed.
The transfer unit is provided at a lower portion of the transfer chamber, and the transfer unit is provided at the upper opening portion of the plasma processing chamber.
For carrying the workpiece to be reciprocated by passing through
A transfer table, and the transfer table is directed toward the plasma processing chamber.
An opening for exposing the material to be processed is provided . 5. A handling chamber provided with a handling device for transferring the material to be processed between the entrance / exit chamber and the transfer chamber. The plasma processing apparatus as described in the above. 6. The plasma processing apparatus according to claim 5, wherein a heating chamber for heating the material to be processed is further provided adjacent to the handling chamber. 7. A transfer chamber having a transfer section for reciprocating a material to be processed between one end and the other end of the chamber; a plasma processing chamber provided adjacent to the transfer chamber; A handling chamber provided adjacent to the handling chamber and provided with a handling device for transferring the material to be processed; an entrance chamber provided adjacent to the handling chamber in a direction perpendicular to the transfer chamber; An outlet chamber provided on the opposite side of the chamber from the inlet chamber, and the plasma processing chamber can communicate with the transfer chamber at an upper portion thereof.
Has a functional opening, and is moved by the transport unit through the opening.
Plasma processing can be performed on the material to be processed.
The transfer unit is provided at a lower portion of the transfer chamber, and the transfer unit is provided at the upper opening portion of the plasma processing chamber.
For carrying the workpiece to be reciprocated by passing through
A transfer table, and the transfer table is directed toward the plasma processing chamber.
An opening for exposing the material to be processed is provided . 8. The plasma processing apparatus according to claim 7, wherein at least one of the processing chambers is provided between the handling chamber, the inlet chamber, and the outlet chamber. 9. The plasma processing apparatus according to claim 5, wherein a gripping device is provided in the transfer chamber for transferring the material to be processed from the handling device to the transfer unit. 10. The handling device according to claim 5, wherein the handling device is movable up and down in the handling room.
Or the plasma processing apparatus according to 7. 11. The plasma processing apparatus according to claim 5, wherein a multistage shelf that can be moved up and down is provided in the entrance room. 12. A plasma processing chamber comprising a plurality of hearts.
To store different evaporation materials in each hearth
And the workpiece moved in one direction by the transport unit.
On the other hand, depending on one of the different deposition materials
Perform plasma processing and move in the opposite direction by the transport unit
Of the different deposition materials with respect to the material to be processed
The plasma treatment using a deposition material different from the one deposition material
8. The plug according to claim 4, wherein
Zuma treatment device.