JP2984154B2 - Atomic force microscope - Google Patents
Atomic force microscopeInfo
- Publication number
- JP2984154B2 JP2984154B2 JP4267059A JP26705992A JP2984154B2 JP 2984154 B2 JP2984154 B2 JP 2984154B2 JP 4267059 A JP4267059 A JP 4267059A JP 26705992 A JP26705992 A JP 26705992A JP 2984154 B2 JP2984154 B2 JP 2984154B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- atomic force
- quantum
- force microscope
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、バネ体で支持した探針
に試料を接近させた時の探針と試料との間に作用する原
子間力によるバネ体の変位を検出し試料の表面観察を行
う原子間力顕微鏡に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for detecting the displacement of a spring body caused by an atomic force acting between the probe and the sample when the sample approaches the probe supported by the spring body, and detecting the surface of the sample. The present invention relates to an atomic force microscope for performing observation.
【０００２】[0002]
【従来の技術】探針をカンチレバーで支持してサンプル
に１０Å〜５Å程度まで近づけてゆくと、探針とサンプ
ルとの間に作用する力が引力から斥力（反力）に変わ
る。原子間力顕微鏡は、この変化に基づくカンチレバー
のしなり角の変化を検出して、サンプルの表面を探針で
走査することによりサンプル表面の観察を行うものであ
り、従来は、カンチレバーと変調光テコ方式やカンチレ
バーと光干渉テコ方式、ＳＴＭによるバネの変位量検出
方式等が提案されている。2. Description of the Related Art When a probe is supported by a cantilever and approaches a sample of about 10 to 5 degrees, a force acting between the probe and the sample changes from an attractive force to a repulsive force (reaction force). Atomic force microscopes detect changes in the bending angle of the cantilever based on this change, and observe the sample surface by scanning the surface of the sample with a probe.Conventionally, the cantilever and the modulated light A lever method, a cantilever-light interference lever method, a spring displacement detection method by STM, and the like have been proposed.
【０００３】カンチレバーと変調光テコ方式は、レーザ
光をカンチレバーの先端部に照射してその反射光を検出
することによってカンチレバーのしなり角の変化に対応
した光量変化を検出するものであり、カンチレバーと光
干渉テコ方式は、カンチレバーのしなり角の変化に伴う
干渉縞の変化を検出するものである。また、ＳＴＭによ
るバネの変位量検出方式は、探針にバイアスを印加しカ
ンチレバーに１０Å近くまで近づけてゆくと流れるトン
ネル電流を検出してカンチレバーの変位量を検出するも
のである。The cantilever and the modulated light lever system detect a change in the amount of light corresponding to a change in the bending angle of the cantilever by irradiating the tip of the cantilever with a laser beam and detecting the reflected light. The optical interference lever method detects a change in interference fringes accompanying a change in the bending angle of the cantilever. In the spring displacement detection method using STM, a bias current is applied to the probe to approach the cantilever up to about 10 °, and a tunnel current flowing therethrough is detected to detect the displacement of the cantilever.
【０００４】[0004]
【発明が解決しようとする課題】しかし、上記レーザ光
を用いる従来の方式は、レーザ光照射装置や光テコ機
構、光検出器を試料台に直結或いは近傍に堅牢に装着さ
れなければならない。通常は数ｍｍ程度の大きさの試料
を０．数ｍｍの探針で観察するが、カンチレバーの変位
をレーザで検出するには、Åオーダのストローク変化を
拡大しなければならない。そのため、光学系のため装置
が大きくなり小型化が難しく、電子顕微鏡に組み込まれ
るアタッチメントとして不適当であった。しかも、レー
ザ光照射装置や光テコ機構、光検出器の構成部品は、高
精度が要求されるため、価格も高くなるというのも問題
であった。However, in the conventional system using the above-mentioned laser beam, the laser beam irradiation device, the optical lever mechanism, and the photodetector must be directly connected to the sample table or firmly mounted near the sample table. Usually, a sample having a size of about several mm is used for 0.1 mm. Observation is performed with a probe of several mm. However, in order to detect the displacement of the cantilever with a laser, it is necessary to enlarge the stroke change on the order of Å. For this reason, the optical system makes the device large and difficult to miniaturize, making it unsuitable as an attachment incorporated in an electron microscope. In addition, since the components of the laser beam irradiation device, the optical lever mechanism, and the photodetector are required to have high accuracy, there is also a problem that the price is high.
【０００５】また、ＳＴＭを用いる方式も、カンチレバ
ーの上にさらにトンネル顕微鏡を装着しなければならな
いため、同様に装置の小型化が難しく、電子顕微鏡に組
み込まれるアタッチメントとして不適当であった。Also, in the method using the STM, since a tunnel microscope must be further mounted on the cantilever, it is similarly difficult to reduce the size of the device, and it is unsuitable as an attachment incorporated in an electron microscope.
【０００６】本発明は、上記の課題を解決するものであ
って、電子顕微鏡に容易にアタッチメントとして組み込
むことができ、安価で小型化が可能な原子間力顕微鏡を
提供することを目的とするものである。An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide an atomic force microscope which can be easily incorporated into an electron microscope as an attachment, and is inexpensive and compact. It is.
【０００７】[0007]
【課題を解決するための手段】そのために本発明は、バ
ネ体で支持した探針に試料を接近させた時の探針と試料
との間に作用する原子間力によるバネ体の変位を検出し
試料の表面観察を行う原子間力顕微鏡において、バネ体
に取り付けられる受光部材、該受光部材に量子線を照射
する量子線照射手段、及び受光部材の量子線照射位置の
変化を検出する検出手段を備え、受光部材に量子線を照
射して量子線照射位置の変化をを検出するように構成し
たことを特徴とするものである。For this purpose, the present invention detects a displacement of a spring body caused by an atomic force acting between the probe and the sample when the sample approaches a probe supported by the spring body. In an atomic force microscope for observing the surface of a sample, a light receiving member attached to a spring body, a quantum beam irradiating means for irradiating the light receiving member with a quantum beam, and a detecting means for detecting a change in a quantum beam irradiation position of the light receiving member And irradiating the light receiving member with a quantum ray to detect a change in a quantum ray irradiation position.
【０００８】[0008]
【作用】本発明の原子間力顕微鏡では、ピエゾを用いた
駆動部上に試料を取り付け、試料の上方で探針を支持す
るバネ体に小さな受光部材を取り付けるだけでよいの
で、装置の小型化が容易にできる。そして、その受光部
材に量子線を照射して受光部材からの量子線や吸収電流
の変化を検出するので、電子顕微鏡等のアタッチメント
として容易に組み込むことができ、電子顕微鏡の電子照
射機構と反射電子や二次電子、透過電子、回折電子等の
検出器をそのまま利用して変位を検出し原子間力顕微鏡
の試料像を観察することができる。In the atomic force microscope of the present invention, it is only necessary to mount the sample on the driving unit using piezo, and to mount a small light receiving member on the spring body supporting the probe above the sample. Can be easily done. Then, the light-receiving member is irradiated with quantum rays to detect changes in the quantum rays and the absorption current from the light-receiving member, so that the light-receiving member can be easily incorporated as an attachment to an electron microscope or the like. , Secondary electrons, transmitted electrons, diffracted electrons and the like can be used as they are to detect the displacement and observe the sample image of the atomic force microscope.
【０００９】[0009]
【実施例】以下、本発明の実施例を図面を参照しつつ説
明する。図１は本発明に係る原子間力顕微鏡の１実施例
を示す図、図２はＡＦＭ装置の細部構成例及び動作を説
明するための図、図３はＡＦＭ装置の１実施例構成を示
す図である。図中、１は電子銃、２は電子線、３は反射
電子・２次電子検出器、４は反射電子・２次電子、５は
上磁極、５′は下磁極、６はＡＦＭ（原子間力顕微鏡）
装置、７は試料、８は探針、９は受光器、１０は透過電
子検出器、１１は鏡筒、１２はＯリング、１３は取り付
けベース、１４はピエゾ駆動部、１５はカンチレバー、
１６は試料ホルダを示す。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a view showing one embodiment of an atomic force microscope according to the present invention, FIG. 2 is a view for explaining a detailed configuration example and operation of an AFM apparatus, and FIG. 3 is a view showing one embodiment configuration of an AFM apparatus. It is. In the figure, 1 is an electron gun, 2 is an electron beam, 3 is a reflected electron / secondary electron detector, 4 is a reflected electron / secondary electron, 5 is an upper magnetic pole, 5 'is a lower magnetic pole, and 6 is an AFM (interatomic atom). Force microscope)
Device, 7 is a sample, 8 is a probe, 9 is a light receiver, 10 is a transmitted electron detector, 11 is a lens barrel, 12 is an O-ring, 13 is a mounting base, 14 is a piezo drive, 15 is a cantilever,
Reference numeral 16 denotes a sample holder.
【００１０】図１に示す実施例は、透過型電子顕微鏡を
基本構成としその鏡筒１１内にＡＦＭ装置６を導入した
ものであり、電子銃１からの電子線２は、所定の径に絞
られてＡＦＭ装置６の受光器９に照射される。ＡＦＭ装
置６は、鏡筒１１の外側からＯリング１２でシールして
透過型電子顕微鏡等の試料部空間（ポールピースギャッ
プ）に装着したものであり、電子線２の照射によって受
光器９から発生する反射電子・２次電子４が反射電子・
２次電子検出器３で検出され、透過電子が透過電子検出
器１０で検出される。The embodiment shown in FIG. 1 has a transmission electron microscope as a basic configuration and an AFM device 6 introduced into a lens barrel 11 thereof. An electron beam 2 from an electron gun 1 is focused to a predetermined diameter. The light is then radiated to the light receiver 9 of the AFM device 6. The AFM device 6 is mounted on a sample space (pole piece gap) of a transmission electron microscope or the like after being sealed with an O-ring 12 from the outside of a lens barrel 11, and is generated from a light receiver 9 by irradiation of the electron beam 2. Reflected electrons and secondary electrons 4 are reflected electrons
The transmitted electrons are detected by the secondary electron detector 3 and the transmitted electrons are detected by the transmitted electron detector 10.
【００１１】ＡＦＭ装置６の試料７、探針８、受光器９
からなる部分の詳細は、例えば図２に示すように取り付
けベース１３のピエゾ駆動部１４に試料７を固定し、バ
ネ体を構成するカンチレバー１５の自由端側に探針８と
受光器９を固定して探針８を試料７と対向させると共に
カンチレバー１５の他端を取り付けベース１３に固定し
たものである。受光器９は、（ハ）に示すように中心部
より金Ａｕと炭素Ｃからなる異種材料で２分して中心部
の境界を基準ラインとして構成したものであり、
（ロ）、（ハ）に示すように上方から所定の径に絞られ
た電子線２が照射される。このような受光器９を用いる
と、ＡｕはＣに比べ二次電子が出やすいため、（ハ）に
示すように電子線２に対して受光器９が矢印Ａ方向に変
位すると、受光器９に対する電子線２の照射面積は同じ
であっても、Ａｕに対する電子線２の照射面積とＣに対
する電子線２の照射面積の割合が変化する。その結果、
Ａｕ側から発生する二次電子の量とＣ側から発生する二
次電子の量とが変化するため、これらの二次電子の量の
変化から受光器９の変位を検出することができる。図２
に示すユニットは、図３（イ）に示すように試料ホルダ
１６の先端に取り付けられ、（イ）のＡ方向からの正面
図（ロ）に示すように上磁極５、下磁極５′との間のポ
ールピースギャップに装着される。The sample 7, the probe 8, and the light receiver 9 of the AFM device 6
For details of the portion consisting of, for example, as shown in FIG. 2, the sample 7 is fixed to the piezo drive unit 14 of the mounting base 13, and the probe 8 and the light receiver 9 are fixed to the free end side of the cantilever 15 constituting a spring body. Then, the probe 8 faces the sample 7 and the other end of the cantilever 15 is fixed to the mounting base 13. The light receiver 9 is configured by dividing the central portion into two parts of a different material made of gold Au and carbon C as shown in FIG.
As shown in (b) and (c), the electron beam 2 narrowed to a predetermined diameter from above is irradiated. When such a photodetector 9 is used, Au emits secondary electrons more easily than C, and therefore, when the photodetector 9 is displaced in the direction of arrow A with respect to the electron beam 2 as shown in FIG. Although the irradiation area of the electron beam 2 with respect to C is the same, the ratio of the irradiation area of the electron beam 2 with respect to Au and the ratio of the irradiation area of the electron beam 2 with respect to C change. as a result,
Since the amount of secondary electrons generated from the Au side and the amount of secondary electrons generated from the C side change, the displacement of the light receiver 9 can be detected from the change in the amount of these secondary electrons. FIG.
The unit shown in FIG. 3 is attached to the tip of the sample holder 16 as shown in FIG. 3A, and is connected to the upper magnetic pole 5 and the lower magnetic pole 5 'as shown in the front view from the direction A in FIG. It is attached to the gap between the pole pieces.
【００１２】上記構成により、ピエゾ駆動部１４のＸＹ
ピエゾ素子を駆動して試料をＸＹ走査しながら二次電子
を検出することによって受光器９の変位を検出し、その
変位検出信号による試料表面の観察像を出力することが
できる。また、ピエゾ駆動部１４のＸＹ方向のピエゾ素
子を駆動して試料をＸＹ走査しながら二次電子を検出
し、この二次電子が一定になるようにピエゾ駆動部１４
のＺピエゾ素子を駆動することによって、Ｚピエゾ素子
の駆動信号による試料表面の観察像を出力することがで
きる。With the above configuration, the XY of the piezo drive unit 14
By driving the piezo element and detecting secondary electrons while XY scanning the sample, the displacement of the light receiver 9 can be detected, and an observation image of the sample surface based on the displacement detection signal can be output. Further, the piezo elements in the XY directions of the piezo driving unit 14 are driven to detect secondary electrons while scanning the sample XY, and the piezo driving unit 14 is controlled so that the secondary electrons become constant.
By driving the Z piezo element, an observation image of the sample surface can be output by a drive signal of the Z piezo element.
【００１３】図４は走査型電子顕微鏡にＡＦＭ装置を組
み込んだ本発明に係る原子間力顕微鏡の他の実施例を示
す図、図５はＡＦＭ装置の他の実施例構成を示す図であ
る。図において、２１は試料室、２２は電子銃、２３は
電子線、２４は磁極、２５はＡＦＭユニット、２６は試
料キャリア、２７は試料ステージ、２８は反射電子・２
次電子、２９は検出手段、３０は表示手段、３１は予備
排気室、３２は仕切弁、３３は試料交換棒、３４はユニ
ットホルダを示す。FIG. 4 is a diagram showing another embodiment of an atomic force microscope according to the present invention in which an AFM device is incorporated in a scanning electron microscope, and FIG. 5 is a diagram showing another embodiment of an AFM device. In the figure, reference numeral 21 denotes a sample chamber, 22 denotes an electron gun, 23 denotes an electron beam, 24 denotes a magnetic pole, 25 denotes an AFM unit, 26 denotes a sample carrier, 27 denotes a sample stage, and 28 denotes reflected electrons.
Reference numeral 29 denotes detection means, 30 denotes display means, 31 denotes a preliminary exhaust chamber, 32 denotes a gate valve, 33 denotes a sample exchange rod, and 34 denotes a unit holder.
【００１４】図４に示す実施例は、試料ステージ２７の
上方に反射電子・二次電子２８を検出するための検出手
段２８を有する走査型電子顕微鏡に試料キャリア２６と
共にＡＦＭユニット２５を装着し、電子線２３の照射に
よって受光器から検出される反射電子・二次電子２８を
検出手段２９で検出して表示手段３０に表示するように
構成したものである。In the embodiment shown in FIG. 4, an AFM unit 25 is mounted together with a sample carrier 26 on a scanning electron microscope having a detecting means 28 for detecting reflected electrons and secondary electrons 28 above a sample stage 27. The reflected electrons and secondary electrons 28 detected from the light receiver by the irradiation of the electron beam 23 are detected by the detection means 29 and displayed on the display means 30.
【００１５】ＡＦＭユニット２５は、図５に示したよう
に試料の代わりにユニットホルダ３４を試料キャリア２
６に装着し、そのユニットホルダ３４に取り付けられ
る。このＡＦＭユニット２５を試料ステージ２７にセッ
トする場合には、試料交換棒３３を試料キャリア２６に
螺合させて、図４に示すようにまず予備排気室３１に導
入する。そして、予備排気室３１を排気した後に仕切弁
３２を開けて試料室２１の試料ステージ２７にセット
し、試料交換棒２６の螺合を外して予備排気室３１まで
試料交換棒２６を引き抜いて仕切弁３２を閉じる。The AFM unit 25 includes a unit holder 34 instead of a sample as shown in FIG.
6 and attached to the unit holder 34 thereof. When the AFM unit 25 is set on the sample stage 27, the sample exchange rod 33 is screwed into the sample carrier 26, and is first introduced into the preliminary exhaust chamber 31 as shown in FIG. After exhausting the preliminary exhaust chamber 31, the gate valve 32 is opened and set on the sample stage 27 of the sample chamber 21, the screw of the sample exchange rod 26 is removed, and the sample exchange rod 26 is pulled out to the preliminary exhaust chamber 31 to partition. Close valve 32.
【００１６】図６は受光器の吸収電流を検出する本発明
に係る原子間力顕微鏡の他の実施例を示す図、図７はＡ
ＦＭユニットの他の実施例構成を示す図である。図にお
いて、４１は試料室、４２は電子銃、４３は電子線、４
４はレンズ、４５はＡＦＭユニット、４６は電流取り出
し線、４７は電流検出端子、４８は電流検出手段、４９
は表示手段、５１は反射電子・二次電子、５２は透過電
子・反射電子（回折）、５３は受光器、５４はカンチレ
バー、５５は探針、５６はサンプル、５７はピエゾ素
子、５８は取り付けベース、５９はインシュレータを示
す。FIG. 6 is a diagram showing another embodiment of the atomic force microscope according to the present invention for detecting the absorption current of the light receiver, and FIG.
It is a figure showing other examples composition of an FM unit. In the figure, 41 is a sample chamber, 42 is an electron gun, 43 is an electron beam, 4
4 is a lens, 45 is an AFM unit, 46 is a current extraction line, 47 is a current detection terminal, 48 is current detection means, 49
Is a display means, 51 is reflected electrons / secondary electrons, 52 is transmitted electrons / reflected electrons (diffraction), 53 is a light receiver, 54 is a cantilever, 55 is a probe, 56 is a sample, 57 is a piezo element, and 58 is a mounting element. A base 59 indicates an insulator.
【００１７】図６に示す実施例は、電子銃４２からの電
子線４３をレンズ４４で制御してＡＦＭユニット４５の
受光器に照射し、その受光器の吸収電流を電流取り出し
線４６から電流検出端子４７を通して電流検出手段４８
で検出し、表示手段４９に吸収電流による試料表面の観
察像を表示できるように構成したものである。そのため
に、図７に示すように取り付けベース５８は、インシュ
レータ５９でカンチレバー５４の取り付け側を電気的に
絶縁して浮かし、カンチレバー５４に電流取り出し線４
６を接続している。したがって、受光器５３が振れて変
位すると、その変位に伴って受光器５３のＡｕとＣに対
する電子線の照射量が変化して受光器５３のＡｕ側の吸
収電流とＣ側の吸収電流が変化するので、この変化量か
ら受光器５３の変位量を検出することができる。In the embodiment shown in FIG. 6, an electron beam 43 from an electron gun 42 is controlled by a lens 44 to irradiate a photodetector of an AFM unit 45. Current detection means 48 through terminal 47
And an observation image of the sample surface by the absorption current can be displayed on the display means 49. For this purpose, as shown in FIG. 7, the mounting base 58 is electrically insulated from the mounting side of the cantilever 54 by an insulator 59 and floats.
6 are connected. Therefore, when the light receiving device 53 is displaced by swinging, the irradiation amount of the electron beam to the Au and C of the light receiving device 53 changes with the displacement, and the absorption current on the Au side and the absorption current on the C side of the light receiving device 53 change. Therefore, the amount of displacement of the light receiver 53 can be detected from the amount of change.
【００１８】なお、本発明は、上記の実施例に限定され
るものではなく、種々の変形が可能である。例えば上記
の実施例では、受光器をカンチレバーに取り付けてその
受光器に電子線を照射し、二次電子、反射電子、透過電
子、回折電子の検出、吸収電流の検出を行うようにした
が、散乱電子や特性Ｘ線等の他の量子線の検出を行うよ
うにしてもよいし、電子線に代えてＸ線や他の量子線を
照射してもよい。探針と受光器は、カンチレバーに取り
付けるようにしたが、一端を固定したスプリングの他端
に探針及び受光器を取り付けたり、その他のバネ体によ
る取り付け機構を採用してもよいことはいうまでもな
い。It should be noted that the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above-described embodiment, the light receiver is attached to the cantilever and the light receiver is irradiated with an electron beam, and secondary electrons, reflected electrons, transmitted electrons, detection of diffracted electrons, and absorption current are detected. Other quantum rays such as scattered electrons and characteristic X-rays may be detected, or X-rays and other quantum rays may be irradiated instead of the electron beam. The probe and the receiver are attached to the cantilever, but it goes without saying that the probe and the receiver may be attached to the other end of the spring with one end fixed, or an attachment mechanism using another spring body may be adopted. Nor.
【００１９】また、受光部材は、ＡｕとＣを組み合わせ
たものを用いたが、量子線の照射領域が変化した場合に
量子線の検出量が異なるものであれば、他の異種材料の
組み合わせたり異種材料の繰り返しパターンにしてもよ
いし、特殊形状にしたり孔を設けたり模様を設けて、受
光部材の変位を検出するように構成してもよい。さらに
この場合、所定の径に絞ったプローブを照射したが、細
いビームにより一定領域の受光材料面を走査して基準ラ
インの変位を検出するように構成してもよいし、受光部
材の変位を電子顕微鏡の走査像や透過像で観るようにし
てもよい。The light receiving member used is a combination of Au and C. However, if the amount of detection of the quantum beam differs when the irradiation area of the quantum beam changes, the combination of other different materials may be used. A repetitive pattern of different materials may be used, or a special shape, a hole or a pattern may be provided to detect the displacement of the light receiving member. Further, in this case, the probe which is narrowed to a predetermined diameter is irradiated, but the light receiving material surface in a certain area may be scanned with a thin beam to detect the displacement of the reference line, or the displacement of the light receiving member may be detected. It may be viewed as a scanning image or a transmission image of an electron microscope.
【００２０】[0020]
【発明の効果】以上の説明から明らかなように、本発明
によれば、ピエゾを用いた駆動部上に試料を取り付け、
試料の上方で探針を支持するバネ体に小さな受光器を取
り付けるだけでよいので、従来例のような変調光テコ部
が不要となり、装置が小型化でき、電子顕微鏡等にＡＦ
Ｍ装置をアタッチメントとして組み込む場合にも、ポー
ルピースギャップの中にも組み込むことができ、コスト
の低減を図ることができる。また、電子顕微鏡等にアタ
ッチメントとして組み込み、受光器に量子線を照射して
受光器からの量子線や吸収電流の変化を検出することが
できるので、電子顕微鏡の電子照射機構と反射電子や二
次電子、透過電子、回折電子等の検出器をそのまま使っ
て変位を検出し原子間力顕微鏡を観察することができ
る。さらには、電子ビームの偏向装置を使用することが
できるので、広領域でカバーでき、電子ビームのコント
ロールにより画質の加工を行うこともできる。As is apparent from the above description, according to the present invention, a sample is mounted on a driving unit using a piezo,
Since it is only necessary to attach a small light receiver to the spring body supporting the probe above the sample, the modulation optical lever part as in the conventional example is not required, the apparatus can be downsized, and the AF can be used for an electron microscope or the like.
When the M device is incorporated as an attachment, the M device can also be incorporated in the pole piece gap, so that the cost can be reduced. In addition, it can be incorporated into an electron microscope or the like as an attachment and irradiate the photodetector with quantum rays to detect changes in the quantum rays or absorption current from the photodetector. Displacement can be detected using a detector for electrons, transmitted electrons, diffracted electrons, and the like, and an atomic force microscope can be observed. Furthermore, since an electron beam deflecting device can be used, it is possible to cover a wide area, and it is possible to perform image quality processing by controlling the electron beam.
【図１】 本発明に係る原間力顕微鏡の１実施例を示す
図である。FIG. 1 is a view showing one embodiment of an atomic force microscope according to the present invention.
【図２】 ＡＦＭ装置の細部構成例及び動作を説明する
ための図である。FIG. 2 is a diagram illustrating a detailed configuration example and operation of the AFM device.
【図３】 ＡＦＭ装置の１実施例構成を示す図である。FIG. 3 is a diagram showing a configuration of an embodiment of the AFM device.
【図４】 走査型電子顕微鏡にＡＦＭ装置を組み込んだ
本発明に係る原子間力顕微鏡の他の実施例を示す図であ
る。FIG. 4 is a diagram showing another embodiment of the atomic force microscope according to the present invention, in which an AFM device is incorporated in a scanning electron microscope.
【図５】 ＡＦＭ装置の他の実施例構成を示す図であ
る。FIG. 5 is a diagram showing a configuration of another embodiment of the AFM device.
【図６】 受光器の吸収電流を検出する本発明に係る原
子間力顕微鏡の他の実施例を示す図である。FIG. 6 is a diagram showing another embodiment of the atomic force microscope according to the present invention for detecting an absorption current of a light receiver.
【図７】 ＡＦＭユニットの他の実施例構成を示す図で
ある。FIG. 7 is a diagram showing the configuration of another embodiment of the AFM unit.
１…電子銃、２…電子線、３…反射電子・２次電子検出
器、４…反射電子・２次電子、５…上磁極、５′…下磁
極、６…ＡＦＭ（原子間力顕微鏡）装置、７…試料、８
…探針、９…受光器、１０…透過電子検出器、１１…鏡
筒、１２…Ｏリング、１３…取り付けベース、１４…ピ
エゾ駆動部、１５…カンチレバー、１６は試料ホルダDESCRIPTION OF SYMBOLS 1 ... Electron gun, 2 ... Electron beam, 3 ... Backscattered electron / secondary electron detector, 4 ... Backscattered electron / secondary electron, 5 ... Upper magnetic pole, 5 '... Lower magnetic pole, 6 ... AFM (atomic force microscope) Apparatus, 7 ... sample, 8
... probe, 9 ... light receiver, 10 ... transmission electron detector, 11 ... barrel, 12 ... O-ring, 13 ... mounting base, 14 ... piezo drive unit, 15 ... cantilever, 16 is sample holder
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) G01B 21/00 - 21/32 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) G01B 21/00-21/32
Claims (6)
た時の探針と試料との間に作用する原子間力によるバネ
体の変位を検出し試料の表面観察を行う原子間力顕微鏡
において、バネ体に取り付けられる受光部材、該受光部
材に量子線を照射する量子線照射手段、及び受光部材の
量子線照射位置の変化を検出する検出手段を備え、受光
部材に量子線を照射して量子線照射位置の変化をを検出
するように構成したことを特徴とする原子間力顕微鏡。1. An atomic force for detecting a displacement of a spring body due to an atomic force acting between the probe and the sample when the sample approaches the probe supported by the spring body and observing the surface of the sample. The microscope includes a light receiving member attached to a spring body, a quantum beam irradiating means for irradiating the light receiving member with a quantum ray, and a detecting means for detecting a change in a quantum beam irradiation position of the light receiving member. An atomic force microscope characterized in that it is configured to detect a change in the irradiation position of the quantum beam.
を照射するものであることを特徴とする請求項１記載の
原子間力顕微鏡。2. The atomic force microscope according to claim 1, wherein the quantum beam irradiation means irradiates an electron beam as a quantum beam.
照射するものであることを特徴とする請求項１記載の原
子間力顕微鏡。3. The atomic force microscope according to claim 1, wherein the quantum ray irradiation means irradiates X-rays as quantum rays.
して構成したものであることを特徴とする請求項１記載
の原子間力顕微鏡。4. The atomic force microscope according to claim 1, wherein the light receiving member is formed by dividing the central portion by a different material into two parts.
出するものであることを特徴とする請求項１記載の原子
間力顕微鏡。5. The atomic force microscope according to claim 1, wherein the detecting means detects a quantum ray from the light receiving member.
を検出するものであることを特徴とする請求項１記載の
原子間力顕微鏡。6. The atomic force microscope according to claim 1, wherein the detecting means detects an absorption current in the light receiving member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4267059A JP2984154B2 (en) | 1992-10-06 | 1992-10-06 | Atomic force microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4267059A JP2984154B2 (en) | 1992-10-06 | 1992-10-06 | Atomic force microscope |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06117847A JPH06117847A (en) | 1994-04-28 |
| JP2984154B2 true JP2984154B2 (en) | 1999-11-29 |
Family
ID=17439467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4267059A Expired - Fee Related JP2984154B2 (en) | 1992-10-06 | 1992-10-06 | Atomic force microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2984154B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019243437A3 (en) * | 2018-06-21 | 2020-02-06 | Carl Zeiss Smt Gmbh | Apparatus and method for examining and/or processing a sample |
| US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
| US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3432091B2 (en) * | 1996-11-05 | 2003-07-28 | 日本電子株式会社 | Scanning electron microscope |
| SE0000555D0 (en) * | 2000-02-22 | 2000-02-22 | Nanofactory Instruments Ab | Measuring device for transmission electron microscope |
| WO2008089950A1 (en) * | 2007-01-22 | 2008-07-31 | Nanofactory Instruments Ab | Mems sensor for in situ tem atomic force microscopy |
-
1992
- 1992-10-06 JP JP4267059A patent/JP2984154B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11040379B2 (en) | 2007-09-17 | 2021-06-22 | Bruker Nano, Inc. | Debris removal in high aspect structures |
| US11391664B2 (en) | 2007-09-17 | 2022-07-19 | Bruker Nano, Inc. | Debris removal from high aspect structures |
| US11577286B2 (en) | 2007-09-17 | 2023-02-14 | Bruker Nano, Inc. | Debris removal in high aspect structures |
| US11964310B2 (en) | 2007-09-17 | 2024-04-23 | Bruker Nano, Inc. | Debris removal from high aspect structures |
| WO2019243437A3 (en) * | 2018-06-21 | 2020-02-06 | Carl Zeiss Smt Gmbh | Apparatus and method for examining and/or processing a sample |
| TWI729418B (en) * | 2018-06-21 | 2021-06-01 | 德商卡爾蔡司Ｓｍｔ有限公司 | Apparatus and method for examining and/or processing a sample |
| US11262378B2 (en) | 2018-06-21 | 2022-03-01 | Carl Zeiss Smt Gmbh | Apparatus and method for examining and/or processing a sample |
| US11592461B2 (en) | 2018-06-21 | 2023-02-28 | Carl Zeiss Smt Gmbh | Apparatus and method for examining and/or processing a sample |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06117847A (en) | 1994-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6590703B2 (en) | Optical system for scanning microscope | |
| US5496999A (en) | Scanning probe microscope | |
| US6265718B1 (en) | Scanning probe microscope with scan correction | |
| JP3095226B2 (en) | Photon scanning tunneling microscopy | |
| US5763767A (en) | Atomic force microscope employing beam-tracking | |
| US5627365A (en) | Scanning near-field optic/atomic force microscope in which imaging light is controlled in relation to a vibrating position of an optical fiber probe | |
| JPH0650750A (en) | Scanning-type microscope including force detecting means | |
| US20040250608A1 (en) | Removable probe sensor assembly and scanning probe microscope | |
| US4874945A (en) | Electron microscope equipped with scanning tunneling microscope | |
| JP2005535878A (en) | Improved method and system for a scanning apertureless fluorescence microscope | |
| US6189373B1 (en) | Scanning force microscope and method for beam detection and alignment | |
| JP2984154B2 (en) | Atomic force microscope | |
| JP3497734B2 (en) | Scanning probe microscope | |
| GB2152697A (en) | Improvements in or relating to scanning optical microscopes | |
| JP3015980B2 (en) | Atomic force microscope, recording / reproducing device and reproducing device | |
| JP3189244B2 (en) | Near field microscope | |
| JP2005147979A (en) | Scanning probe microscope | |
| JPH06117848A (en) | Interatomic force microscope unit | |
| US6748795B1 (en) | Pendulum scanner for scanning probe microscope | |
| JPH06148400A (en) | Apparatus and method for observing surface indentation image and x-ray transmission image | |
| JPH08220113A (en) | Scanning proximity field optical microscope | |
| JP3188024B2 (en) | Scanning probe microscope | |
| JPH11316241A (en) | Probe for scanning near-field optical microscope and scanning near-field optical microscope | |
| JPH0676771A (en) | Scanning type image pickup device, image pickup method, and image pickup plate used therefor | |
| JPH0972924A (en) | Scanning type probe microscope |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990907 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090924 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090924 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100924 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100924 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110924 Year of fee payment: 12 |
|
| LAPS | Cancellation because of no payment of annual fees |