JP2966591B2 - Optical semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to an optical semiconductor device suitable for an optical remote controller or the like.

[0002]

2. Description of the Related Art In recent years, in many indoor devices such as audio devices, air conditioners, and television receivers, infrared light is strong against noise and can transmit a relatively large amount of information in a short time.
Furthermore, since it can be controlled with a short transmission distance, an optical remote controller using an optical semiconductor element is being used. An optical semiconductor device used for the optical remote controller is disclosed in, for example,
No. 182, and an application example thereof is shown in FIG. In this figure, a light emitting diode 63 and an integrated circuit element 64 are provided on a ground electrode 62 formed on an insulating substrate 61, and a power supply terminal 65 is provided on the insulating substrate 61. V-grooves 68 are provided vertically and horizontally on such a large substrate 67 on which a plurality of optical semiconductor devices 66 are provided, and these are manually cut off one by one.

[0003]

However, the first disadvantage of the above-mentioned technique is that the labor of cutting off one by one manually and the number of power supply terminals 6 corresponding to the number of terminals of the integrated circuit element 64 are large.
5 and the time required to provide a reinforcing plate (not shown) under a thin insulating substrate 61 that is easily deformed in order to wire-bond to the light emitting diode 63, the integrated circuit element 64, and the power supply terminal 65, respectively. It is difficult to manufacture. A second drawback is that since the components are arranged in order on the surface of the insulating substrate 61, the external shape becomes large, so that the device is not downsized. A third disadvantage is that light emitted from the light emitting diodes 63 on the surface of the insulating substrate 61 excites the integrated circuit elements 64 on the same insulating substrate 61 and causes malfunction. Therefore, the present invention has been made in view of the above-mentioned drawbacks, that is, it is an object of the present invention to provide a small-sized optical semiconductor device which is easy to manufacture and does not malfunction.

[0004]

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a first lead frame, a second lead frame located apart from the first lead frame, and a first lead frame fixed on a surface of the first lead frame. And an integrated circuit element fixed on the back surface of the first or second lead frame. A resin body having an outer frame formed outside the optical semiconductor element and the integrated circuit element and an inner frame formed in a gap between the first and second lead frames is provided. More desirably, the first and second lead frames are tapered in the vicinity of the gap so as to have a substantially convex cross section, or the inner frame portion is formed so as to cover the tips of the first and second lead frames. It is provided in a substantially I-shaped cross section.

[0005]

As described above, a frame group provided with a plurality of first and second lead frame patterns to which an optical semiconductor element and an integrated circuit element are fixed is cut off one by one at a time by a die press. It is easy to manufacture because it can do things. And the first
The optical semiconductor element is fixed to the surface of the lead frame of
Alternatively, since the integrated circuit element is fixed to the back surface of the second lead frame, the size of the device can be reduced by effectively using both surfaces. Further, since the gap between the first and second lead frames is partitioned by the inner frame portion, light emitted from the optical semiconductor element does not excite the integrated circuit element.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention using a light receiving element will be described below with reference to the drawings. FIG. 1A is a plan view of an optical semiconductor device according to the present embodiment, FIG. 1B is a cross-sectional view along the line AA, and FIG. 1C is a bottom view of the present device. In these figures, the first lead frame 1 and the second lead frames 2, 3, and 4 are separated from each other, and are all made of iron or the like and plated. The optical semiconductor element 5 is, for example, a light receiving element composed of a PIN auto diode formed by diffusing phosphorus in a P-type substrate, and is mounted and fixed on the surface of the first lead frame 1. The integrated circuit element 6 includes, for example, an amplifier, a filter, a demodulation circuit, a waveform shaping circuit, and a transistor, and is mounted and fixed on the back surface of the second lead frame 2.

The resin body 7 is made of a heat-resistant thermoplastic resin such as polyphenylene sulfide, for example.
And formed so as to cover the periphery of the first and second lead frames 1, 2, 3, and 4. The upper side of the outer frame part 8 is located outside the optical semiconductor element 5, and the lower side of the outer frame part 8 is located outside the integrated circuit element 6, and the outer shape is formed in a substantially rectangular parallelepiped shape. The inner frame portion 9 includes first and second lead frames 1 and 2,
It is formed so as to fill gaps 3 and 4. Metal wire 10,
11, 12, 13, and 14 are all made of gold or the like, respectively, between the optical semiconductor element 5 and the second lead frame 2, between the integrated circuit element 6 and the first lead frame 1, and between the optical semiconductor element 6 and the first lead frame 1. , Between the second lead frame 2,
And the second lead frame 3 is wire-bonded. The translucent resin 15 is made of an epoxy resin or the like, and is formed so as to cover the periphery of the optical semiconductor element 5 and the thin metal wire 10 and to cover the upper concave portion of the outer frame portion 8. The light-shielding resin 16 is made of a black resin having a light-shielding property, and covers the periphery of the integrated circuit element 6 and the thin metal wires 11, 12, 13, and 14.
It is formed so as to cover the lower concave portion of the outer frame portion 8. The optical semiconductor device 17 is constituted by these components. Vcc
And GND are an applied potential and a ground potential applied to each circuit in the integrated circuit element 6. The signal V _IN from the optical semiconductor device 5 that has received the infrared light obtained by modulating the electric signal is transmitted to the second lead frame 3 via the integrated circuit device 6 and the electric signal V _IN is outputted.
give o.

Next, the manufacturing process of the present optical semiconductor device will be described.
When a frame group provided with a plurality of lead frame patterns shown in FIG. 1A is punched by a press using a mold, a frame group having a joint between the patterns is completed. This is plated. Injection molding is performed so that the resin body 7 having the outer frame portion 8 and the inner frame portion 9 is formed for each pattern. Next, the optical semiconductor element 5 is die-bonded and wire-bonded on the surface of the first lead frame 1. The integrated circuit element 6 is provided on the back surface of the second lead frame 2.
Is subjected to die bonding and wire bonding. The light-transmitting resin 15 and the light-shielding resin 16 are molded. Then, when the joints of the frame group are pressed with a mold, one optical semiconductor device 17 is obtained. Thereafter, if necessary, the first and second lead frames 1, 2, 3, and 4 may be bent as shown in FIG. 1B.

Next, the second embodiment of the present invention using a light emitting diode
An embodiment will be described with reference to the drawings. FIG. 2A is a plan view of the optical semiconductor device according to the present embodiment, FIG. 2B is a BB cross-sectional view thereof, and FIG. 2C is a bottom view of the present device. In these figures, the first lead frames 18, 1
The lead frames 9, 20 and the second lead frames 21, 22, 23 are separated from each other and are all made of iron or the like and plated. The optical semiconductor elements 24, 25, 26 are mounted and fixed on the surfaces of the first lead frames 18, 19, 20, respectively, and are light emitting diodes made of, for example, GaAlAs. The integrated circuit element 27 includes, for example, a waveform shaping circuit, a modulation circuit, and a transistor.
Is mounted and fixed on the back surface.

A resin body 28 made of polyphenylene sulfide or the like is provided with an outer frame portion 29 formed outside the optical semiconductor elements 24, 25, 26 and the integrated circuit element 27, the first lead frames 18, 19, 20 and the second lead frame. Has an inner frame portion 30 formed so as to fill the gaps between the lead frames 21, 22, and 23 of FIG. The thin metal wires are the optical semiconductor elements 24, 25,
26 and the lead frame, and between the integrated circuit element 27 and each lead frame. The translucent resin 31 is formed so as to cover the optical semiconductor elements 24, 25, 26 and the fine metal wires. The light-shielding resin 32 is formed so as to cover the integrated circuit element 27 and the fine metal wires. These constitute an optical semiconductor device 33. The electric signal V _IN entered from the second lead frame 22 passes through the integrated circuit element 27 and is emitted from the optical semiconductor elements 24, 25, 26 as infrared light obtained by modulating the electric signal.

Next, a third embodiment of the present invention will be described with reference to the drawings. FIG. 3A is a plan view of the optical semiconductor device according to the present embodiment, and FIG. 3B is a cross-sectional view of the optical semiconductor device taken along the line DD. In these figures, a first lead frame 34 and second lead frames 35, 36, 37, 38, 39, 40, 4
Reference numerals 1, 42, and 43 are made of iron or the like and are located apart from each other. These lead frames are formed by coining press and plated so that the cross section of the end portion 44 has a tapered shape having a substantially convex shape in the vicinity of the gap between the lead frames. The optical semiconductor element 45 is mounted and fixed on the front surface of the first lead frame 34, and the integrated circuit element 46 is mounted and fixed on the back surface of the first lead frame 34. Resin body 4
7 has an outer frame portion 48 and an inner frame portion 49, and the outer frame portion 48 is formed so as to cover the periphery of the first and second lead frames 34 to 43. The inner frame 49 covers the periphery of the end 44. With such a shape of the end portion 44 of the lead frame, the fixing of the lead frame is strengthened.

As another means for further fixing the lead frame, a fourth embodiment of the present invention will be described with reference to the sectional view of FIG. The inner frame portion 50 is formed in a substantially I-shaped cross section so as to cover the tips of the first and second lead frames 51 and 52. With such a shape of the inner frame portion 50, the fixing of the lead frame becomes strong.

Next, as an application example of the present invention, a fifth embodiment will be described with reference to the sectional view of FIG. In this figure, the optical semiconductor device 17 is the same as that described in the first embodiment. The outer frame resin body 53 is made of a resin having excellent heat resistance, moisture resistance, chemical resistance, and pressure resistance, for example, an epoxy resin filled with silica or glass fiber, and is formed so as to surround the optical semiconductor device 17. When the lens portion 54 is formed on the outer frame resin body 53, an effect of improving the light collecting property for the optical semiconductor element 5 can be obtained.

Further, as another application example of the present invention, a sixth embodiment will be described with reference to the sectional view of FIG. Outer frame resin body 55
Is formed of an epoxy resin containing silica or glass fiber, and is formed with an inner size slightly larger than the outer shape of the upper half of the optical semiconductor device 17. Then, it is inserted into the upper half of the optical semiconductor device 17 and fixed with, for example, an adhesive. As a result, a device simpler than that of the fifth embodiment can be obtained.

In all of the embodiments described above, the integrated circuit device is provided on one of the plurality of second lead frames, but is mounted on the plurality of second lead frames. , May be fixed. Further, in all of the above embodiments, the integrated circuit element is die-bonded, but may be fixed by solder reflow or the like as another means.

[0016]

According to the present invention, as described above, the optical semiconductor element and the integrated circuit element are fixed to the lead frame. Therefore, a frame group provided with a plurality of the patterns is pressed one by one by a die. Easy to manufacture because it can be cut off. Since the optical semiconductor element is fixed to the front surface of the first lead frame and the integrated circuit element is fixed to the rear surface of the first or second lead frame, the size of the device can be reduced by effectively using both surfaces. Further, since the gap between the first and second lead frames is partitioned by the inner frame portion, the light from the optical semiconductor element does not affect the integrated circuit element, so that no malfunction occurs.

Further, according to the present invention, since the outer frame portion is provided on the first and second lead frames and the inner frame portion is provided in the gap between the lead frames to reinforce the device, the device does not deform during wire bonding. By providing the inner frame portion, the upper mounting surface and the lower mounting surface are completely separated. The upper optical semiconductor element can be fixed by die bonding and wire bonding, and the lower integrated circuit element can be fixed by solder reflow. Therefore, there is an advantage that the above mounting method and the lower mounting method can be performed by different methods, and a mounting method suitable for the element can be selected. Since the upper mounting surface and the lower mounting surface are completely separated from each other, cover the optical semiconductor element with a translucent resin on the upper mounting surface, and cover the integrated circuit element with a light-shielding resin on the lower mounting surface. In addition, there is an advantage that the packaging method and material can be selected according to the device and its use.

Further, by providing the outer frame resin body in contact with the surface of the resin body, the light collecting property is improved, and heat resistance, moisture resistance, chemical resistance, and pressure resistance can be secured. Further, by forming the end portions of the first and second lead frames to have a substantially convex cross section or forming the inner frame portion to have a substantially I-shape, the supporting force of the first and second lead frames increases. Fixation becomes strong. Therefore, it is not deformed at the time of wire bonding, and the strength of the semiconductor device itself is secured. Furthermore, conventional devices use expensive insulating substrates,
Since the present invention uses a low-cost lead frame, a low-cost optical semiconductor device can be obtained. In the related art, the external terminals are provided in an independent process, but in the present invention, the external terminals are provided in a normal process, so that the number of processes is reduced and the cost is reduced.

[Brief description of the drawings]

FIG. 1A is a plan view of an optical semiconductor device according to a first embodiment of the present invention, FIG. 1B is an AA cross-sectional view thereof, and FIG.

2A is a plan view of an optical semiconductor device according to a second embodiment of the present invention, FIG. 2B is a cross-sectional view of the device, and FIG. 2B is a bottom view of the device.

FIG. 3A is a plan view of an optical semiconductor device according to a third embodiment of the present invention, and FIG.

FIG. 4 is a sectional view of an optical semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view of an optical semiconductor device according to a fifth embodiment of the present invention.

FIG. 6 is a sectional view of an optical semiconductor device according to a sixth embodiment of the present invention.

FIG. 7 is a sectional view of a conventional optical semiconductor device.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 first lead frame 2, 3, 4 second lead frame 5 optical semiconductor element 6 integrated circuit element 7 resin body 8 outer frame section 9 inner frame section 17 optical semiconductor device

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 33/00

Claims (2)

(57) [Claims] A first lead frame, a second lead frame located apart from the first lead frame, an optical semiconductor element fixed on a surface of the first lead frame, and the first lead frame.
Alternatively, an integrated circuit element fixed on the back surface of the second lead frame, an outer frame formed outside the optical semiconductor element and the integrated circuit element, and a gap formed between the first and second lead frames. An optical semiconductor device, comprising: a resin body having an inner frame portion formed. 2. The method according to claim 1, wherein the first and second lead frames have a tapered shape having a substantially convex cross section in the vicinity of the gap, or the inner frame portion is formed of a tapered shape of the first and second lead frames. 2. A substantially I-shaped section so as to cover the tip.
Optical semiconductor device.