JP2959517B2 - Light source device and mounting method of electric component - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a light source device and a method for mounting an electric component.

[0002]

2. Description of the Related Art Surface emitting semiconductor light emitting devices
Generally, an upper surface electrode is provided on the upper surface, and a hole is formed in a part of the upper surface electrode to form a light emission port. The lower electrode is formed on the entire lower surface of the light emitting element.

A light emitting element is mounted on a substrate by fixing a lower electrode to a wiring pattern formed on the substrate. The upper electrode is connected to a wiring pattern on the substrate by wire bonding.

However, there are cases where the light emitting element cannot withstand the pressure applied during wire bonding.

[0005]

DISCLOSURE OF THE INVENTION An object of the present invention is to provide a light source device capable of highly reliable electrical connection without applying excessive pressure to a light emitting element.

Another object of the present invention is to provide a method for mounting an electric component which does not require wire bonding.

[0007]

Further, the present invention provides an application device of the above light source device.

In the light source device according to the present invention, a concave portion is formed on the surface of the substrate at a position where the light emitting element is to be mounted, the light emitting element is accommodated and fixed in the concave portion, and projects from the surface of the substrate to the opening of the concave portion. At least one first bridged electrode is formed, a tip of the first bridged electrode is connected to at least one electrode of the light emitting element, and the first bridged electrode is formed on a substrate surface. Connected to the second connection electrode.

A first bridge electrode is connected to at least one electrode of the light emitting element housed and fixed in the recess of the substrate. The first bridge type electrode is connected to the second connection electrode by a wiring pattern.

Therefore, the electrode of the light emitting element can be connected to the connection electrode on the substrate without performing wire bonding, so that the light emitting element is hardly damaged.

Further, since no wires are used, disconnection hardly occurs, and the reliability of the product is improved.

In a preferred embodiment, a third electrode is formed on the bottom surface of the concave portion, the third electrode is connected to another electrode of the light emitting element, and the third electrode is formed on a substrate surface. It is connected to the fourth connection electrode.

Thus, the two electrodes of the light emitting element are connected to the second
And the fourth connection electrode without wire bonding.

In a further preferred embodiment, the light emitting element 2
The two electrodes, the first cross-linked electrode and the third electrode are welded to each other by heating.

[0016] Compared to wire bonding, the process of the mounting process is greatly shortened, so that it is suitable for mass production of a light source device on which a light emitting element is mounted, and the manufacturing cost can be reduced.

In still another embodiment, the light-emitting element is a surface-emitting type semiconductor light-emitting element, and a light-emitting hole connected to the back surface of the substrate is formed at the bottom of the concave portion. The light exit port faces the light exit port. Light emitted from the light emitting element is extracted outside from the back surface of the substrate.

In one embodiment, an optical element is provided at a position corresponding to the light exit hole on the lower surface of the substrate. The optical element includes a diffraction grating, a condenser lens, a polarizing filter, and other elements that separate, condense, diffuse, and polarize light. Thus, light emitted from the light emitting element can be used in a desired form.

In another embodiment, a second surface of the surface-emitting type semiconductor light-emitting device is provided on a surface opposite to the first light-emitting opening.
Are formed. The light from the second light exit can be used as a monitor of light emitted from the first light exit.

The gap between the side surface of the light emitting element mounted in the recess and the inner wall of the recess may be filled with an insulating material. The light emitting element is stably fixed in the recess.

In the electric component mounting apparatus according to the present invention, a concave portion is formed at a position on the surface of the substrate where the electric component is to be mounted, and the electric component is accommodated and fixed in the concave portion. At least one bridge electrode protruding from the opening is formed, and a tip of the bridge electrode is connected to at least one electrode of the electrical component. The bridge electrode is connected to a connection electrode formed on the substrate surface. What is connected.

In the method for mounting an electric component according to the present invention, a concave portion is formed at a position on the surface of a substrate where the electric component is to be mounted,
A bridge electrode protruding from the opening of the recess is formed on the surface of the substrate, and the bridge electrode is connected to a connection electrode on the surface of the substrate. At least one electrode is connected to the crosslinked electrode.

According to the mounting structure and the mounting method, the electric component can be connected to the connection electrode on the substrate without using the wire bonding method, and the working efficiency and the reliability can be improved.

The present invention further provides a board suitable for the above mounting structure and mounting method.

Further, the present invention provides an application of the light source device described above, for example, a vibrator or an optical scanning device.

Still other features of the present invention will become apparent in the following description of the embodiments.

[0027]

【Example】

First Embodiment FIGS. 1 and 2 show a light source device according to a first embodiment. FIG. 1 shows a state in which the surface-emitting type semiconductor light-emitting element is not mounted. 1 (A) is a plan view, and FIG. 1 (B) is a sectional view taken along line II of FIG. 1 (A). 2A is a plan view, and FIG. 2B is a cross-sectional view taken along line II-II of FIG. 2A. In FIG. 1B and FIG. 2B, the thickness of the laminated wiring layer formed on the substrate is considerably emphasized for convenience of explanation and clarity. This is the same in a cross-sectional view of a substrate shown later. Although the substrate and the laminated wiring layer are wider than those shown in the figure, only some of them are cut out in the drawing. However, the size of the substrate and the stacked wiring layer may be as shown in the drawing. It goes without saying that the substrate may be wider than the laminated wiring layer. Less than,
In the description of FIG. 1 (B) and FIG. 2 (B), upper and lower sides are basically determined according to the drawings. This is the same in the embodiments after FIG.

The substrate 10 is formed of, for example, silicon. Silicon can be finely processed by micromachining technology.

On the upper surface of the substrate 10, a concave portion 11 for accommodating the surface-emitting type semiconductor light emitting device 20 is formed. The entire surface-emitting type semiconductor light-emitting element 20 is accommodated in the recess 11. First, the structure and operation of the surface-emitting type semiconductor light emitting device 20 will be briefly described. The surface emitting semiconductor light emitting device 20 may be either a laser or an LED.

Referring particularly to FIG. 2B, the surface-emitting type semiconductor light-emitting device 20 includes a lower cladding layer 22, an active layer 23 and an upper cladding layer 24 formed on a semiconductor substrate 21 by, for example, a liquid phase epitaxy (LPE) method. And formed by successive growth. On the upper cladding layer 24, an upper surface electrode 25 is formed except for a region to be the light emission port 27 on the upper surface. Semiconductor substrate
On the lower surface of 21, except for the area to be the light exit 28, the lower electrode
26 are formed. The diameter of the light exit 27 formed on the upper surface of the light emitting element 20 is larger than the diameter of the light exit 28 formed on the lower surface. The surface-emitting type semiconductor light emitting device 20 is mounted in the recess 11 so that the upper surface thereof faces the bottom surface of the recess 11 and the lower surface faces the opening direction of the recess 11.

When a current flows between the upper electrode 25 and the lower electrode 26, light is generated in the active layer 23. Most of the light generated in the active layer 23 is emitted to the outside from the light emission port 27, and part of the light is emitted from the light emission port 28.

The light emitted from the light emission port 27 of the surface-emitting type semiconductor light emitting element 20 is generally used as the light emitted from the light source device. The light source device is a photo micro switch, photoelectric sensor,
It is used as a light source of an optical device such as an optical scanner.

The light emitted from the light exit 28 is used for monitoring. For example, the amount of light emitted from the light exit 28 is detected, and the driving of the surface-emitting type semiconductor light emitting element is feedback-controlled based on the detected amount of light so that the amount of light emitted from the light exit 27 becomes constant. . When this light source device is used in a vibration type optical scanner described later, the direction of light emitted from the light exit 27 is detected based on the direction of light emitted from the light exit 28. . This is because the light emitted from the light exit 28 exits in the direction opposite to the light from the light exit 27. The light exit port 28 is not necessarily required.

At substantially the center of the bottom surface of the concave portion 11 formed in the substrate 10, a light passage hole 12 communicating with the back surface (lower surface) of the substrate 10 is formed. The light passage hole 12 is formed in a truncated cone shape such that the diameter gradually increases from the bottom surface of the concave portion 11 toward the back surface of the substrate 10. A surface electrode layer 18B is also formed on the bottom surface of the concave portion 11. This surface electrode layer
A hole 41 is also formed in 18B at the center of the bottom surface of the concave portion 11. The surface-emitting type semiconductor light-emitting device 20 has a light exit 27
Is the light passage hole 12 formed in the recess 11 and the surface electrode layer
It is positioned and fixed in the concave portion 11 so as to coincide with the hole 41 formed in 18B. The diameter of the light exit 27, the diameter of the hole 41, and the diameter of the uppermost part of the light passage hole 12 are substantially equal. Light exit
Light emitted from 27 is guided outside through hole 41 and light passage hole 12.

On the upper surface of the substrate 10, an upper electrode 25 formed on the upper surface of the surface-emitting type semiconductor light emitting device 20 and a lower electrode 26 formed on the lower surface are respectively connected to other electronic elements, a power source and the like on the substrate 10. First and second for electrical connection
Are provided.

These laminated wiring layers are formed by laminating a plurality of conductive layers and insulating layers. A highly conductive metal material such as Au or Al is used for the conductive layer. For the insulating layer, a material having a high insulating property such as an oxide film or a polyimide film is used.

The first laminated wiring layer is formed on the right side of the concave portion 11 of the substrate 10 (in FIGS. 1A and 2A). A part of the first stacked wiring layer is provided so as to protrude above the recess 11 (opening). The portion of the first stacked wiring layer provided so as to extend to the opening of the concave portion 11 is referred to as a bridge electrode portion 13. The bridge-type electrode portion 13 has a length above the concave portion 11, from one side of the concave portion 11 to the opposite side, so as to overlap a part of the lower electrode 26 of the light emitting element 20.
It has a width substantially equal to one width of the light emitting element 20.

The first laminated wiring layer includes the lower insulating layer 14, the first
The conductive layer 15A, the intermediate insulating layer 16, the second conductive layer 17A and the surface electrode layer 18A are laminated in this order. In the cross-linked electrode section 13, the lower insulating layer 14 and the first conductive layer 15
The tip of A is covered with the intermediate insulating layer 16.
The length of the first conductive layer 15A in the direction in which the bridging electrode portion 13 extends is slightly shorter than the length of the lower insulating layer 14.

An elongated hole 30 is formed in a part of the lower insulating layer 14 in the width direction thereof. Part of the first conductive layer 15A is a hole
30 and reaches the lower surface of the lower insulating layer 14. First
The conductive layer 15A passes through the hole 30 to form a surface-emitting type
It is in contact with and electrically connected to the lower electrode 26 of 20.

The intermediate insulating layer 16 laminated on the first conductive layer 15A also has a partly elongated hole 31 formed therein. Part of the second conductive layer 17A enters the hole 31 and reaches the upper surface of the first conductive layer 15A, and the second conductive layer 17A and the first conductive layer 15A are in contact with each other and are electrically connected. The entire surface of the second conductive layer 17 and the surface electrode layer 18A laminated on the upper surface thereof are in contact with each other. For this reason, the lower electrode 26 of the surface-emitting type semiconductor light-emitting device 20 is connected to the surface electrode layer 18A via the first conductive layer 15A and the second conductive layer 17A. A driving voltage is applied to the light emitting element 20 through the surface electrode layer 18A.

The second laminated wiring layer is formed on the left side of the substrate 10, and includes a lower insulating layer 14, an intermediate insulating layer 16, and a second conductive layer.
17B and the surface electrode layer 18B are laminated in this order. The surface electrode layer 18B is formed so as to extend through the inner wall of the concave portion 11 to the bottom surface of the concave portion 11. On the bottom surface of the concave portion 11, the upper electrode 25 of the surface-emitting type semiconductor light-emitting device 20 is in contact with and electrically connected to the surface electrode layer 18B. Substrate 10
A driving voltage is applied to the light emitting element 20 through the upper surface electrode layer 18B.

The lower insulating layer 14 and the intermediate insulating layer 16 of the first laminated wiring layer are continuously connected to the lower insulating layer 14 and the intermediate insulating layer 16 of the second laminated wiring layer. Conductive layers 15A, 17A, 18 are provided between the first laminated wiring layer and the second laminated wiring layer.
There are portions where A, 17B and 18B are not formed, and due to the presence of these portions, the conductive layers 15A, 17A and 18A and 17B and 18B
Insulation with is secured.

The mounting of the surface-emitting type semiconductor light-emitting element 20 in the recess 11 is performed as follows.

With the light emission port 27 of the surface-emitting type semiconductor light emitting element 20 directed toward the inside of the recess 11, the light emission port 27 is penetrated from diagonally above left of the recess 11 to below the bridge electrode 13. And the hole 41 and the light passage hole 12 are aligned. Thereafter, the entire substrate 10 or a portion where the upper electrode 25 of the light emitting element 20 is in contact with the surface electrode layer 18B and a portion where the lower electrode 26 is in contact with the first conductive layer 15A through the hole 30 are heated. The upper electrode 25 and the surface conductive layer 18 are welded to each other, and the lower electrode 26 and the first conductive layer 15A are welded to each other. As a result, the surface-emitting type semiconductor light-emitting device 20 is fixed in the concave portion 11 of the substrate 10.

Since the upper electrode 25 and the lower electrode 26 of the surface-emitting type semiconductor light-emitting device 20 are connected to the surface electrode layers 18A and 18B on the substrate 10 by the first and second laminated wiring layers,
There is no need to perform wire bonding or soldering directly on the surface-emitting type semiconductor light emitting device 20, and therefore, the surface-emitting type semiconductor light emitting device 20 is not damaged. Electrodes 25 and 26 of surface-emitting type semiconductor light-emitting device 20 and surface electrode layer on substrate 10
Since the wireless structure between 18A and 18B has a wireless structure, disconnection of the wiring hardly occurs, and the reliability of the product can be improved. In addition, the surface-emitting type semiconductor light-emitting element 20 is entirely recessed.
Since the light source device is housed in the light source 11, the overall size of the light source device including the light emitting element 20 and the substrate 10 is reduced.

In the surface-emitting type semiconductor light emitting device 20, a portion of the upper cladding layer 24 corresponding to the light exit 27 may be doped with impurities to form a current confinement structure. Light exit 27
The current efficiently flows into the portion of the active layer 23 corresponding to the above, so that light with high emission light intensity can be extracted from the light passage hole 12 to the outside.

The material of the upper surface electrode 25 and the lower surface electrode 26 of the surface-emitting type semiconductor light-emitting device 20 is made of Au or the like having a small impurity content, and the conductive layers (first and second stacked wiring layers) are used. In particular, as the material of the first conductive layer 15A and the surface electrode layer 18B), it is preferable to use Au or the like containing impurities (eg, Si, Sn, etc.). When the upper electrode 25 is brought into contact with the surface electrode layer 18B and the lower electrode 26 is brought into contact with the first conductive layer 15A, a heat treatment (preferably at a temperature of 400 ° C. or less) causes the conductive material containing impurities to become conductive. Dissolve first. That is, the first conductive layer 15A is welded to the lower electrode 26,
18B is welded to the upper electrode 25.

It is more preferable to use a transparent conductive material for the surface electrode layers 18A and 18B. Dissolved surface electrode layers 18A, 18
Even if B blocks the light emission port 27 or 28, the emission of light is not largely prevented by the electrodes. Examples of the transparent conductive material include In ₂ O ₂ and SnO ₂ .

The mounting structure described above is not limited to the mounting of the surface-emitting type semiconductor light-emitting element, but can be extended to the mounting of other electronic elements, electric elements, components and the like.

FIGS. 3 to 7 show the steps of manufacturing the substrate on which the laminated wiring layer shown in FIG. 1 is formed. These drawings show cross-sectional views of a portion corresponding to FIG.

A silicon substrate 10 is prepared.
Thermal oxide films 14 and 42 are deposited on the entire upper and lower surfaces of the substrate, or the surface of the silicon substrate 10 is oxidized (FIG. 3A). The thermal oxide film has high insulating properties. The thermal oxide film 14 formed on the upper surface of the silicon substrate 10 becomes the lower insulating layer 14 described above.
The thermal oxide film 42 formed on the lower surface of the silicon substrate 10 serves as a mask for etching the silicon substrate 10.

The portion of the thermal oxide film 42 formed on the lower surface of the silicon substrate 10 where the light passage hole 12 is to be formed is formed.
Is removed (FIG. 3 (B)). On the lower surface of the silicon substrate 10, anisotropic etching is performed using the remaining thermal oxide film 42 as a mask. As a result, the portion of the silicon substrate 10 from which the thermal oxide film 42 has been removed is scraped into a truncated cone shape from the lower surface (FIG. 4).
(A)).

The thermal oxide film 42 formed on the lower surface of the silicon substrate 10 is entirely removed (FIG. 4B).

The lower insulating layer 14 formed on the upper surface of the silicon substrate 10 at the portion where the recess 11 is to be formed is removed.
However, a portion where the cross-linked electrode portion 13 is to be formed is left. The hole 30 is also formed in the portion where the bridge electrode 13 is to be formed.
The portion of the lower insulating layer 14 where the metal is to be formed is removed (FIG. 5A).
).

In the region on the right side of the portion where the concave portion 11 is to be formed, the first conductive layer 15A is laminated on the lower insulating layer 14 except for the tip of the portion where the bridge electrode portion 13 is to be formed (see FIG. FIG. 5 (B)). The first conductive layer 15A contacts the silicon substrate 10 through the hole 30.

The first conductive layer 15A is covered with a metal mask on the silicon substrate 10 except for a portion where the first conductive layer 15A is to be formed, and a conductive material (for example, A
1, Au, etc.). A conductive material may be vapor-deposited on the upper surface of the silicon substrate 10 without using a metal mask, and thereafter, the conductive material stacked in other regions may be removed except for a portion to be the first conductive layer 15A. This is the same in the case of stacking other conductive layers or insulating layers described below.

Next, an intermediate insulating layer 16 is deposited except for a portion where the concave portion 11 is to be formed. Even in the portion where the concave portion 11 is to be formed, the intermediate insulating layer 16 is provided in the portion where the bridge electrode portion 13 is to be formed.
Is deposited. Further, the intermediate insulating layer 16 is formed in a portion to be the hole 31.
Is not formed (FIG. 6 (A)). The lower insulating layer 14 and the first conductive layer 15A are completely covered by the intermediate insulating layer 16 up to the tip in the portion where the crosslinked electrode portion 13 is to be formed.

Further, the second conductive layer 17 is formed on the intermediate insulating layer 16.
A and B are deposited (FIG. 6B). In a region corresponding to the first conductive layer 15A, the second conductive layer 17A
It contacts the upper surface of conductive layer 15A.

On the upper surface of the silicon substrate 10, a resist 19 is applied to the entire upper surface of the substrate 10 except for a region where the recess 11 is to be formed, which is slightly smaller than this region (FIG. 7A). ).

Using the resist 19 as a mask, a silicon substrate
Isotropic etching is performed from the upper surface of 10 (FIG. 7B). The substrate 10 is shaved in the lower surface direction in a portion where the resist 19 is not formed, and undercuts are formed around the shaved portion in a lower portion of the resist 19 and a lower portion of a portion serving as a bridge electrode portion. As a result, the concave portion 11 is formed, and the bridge electrode portion 13 is formed. Further, the bottom surface in the recess 11 and the light passage hole 12 penetrate.

Finally, the resist 19 is removed, and the second conductive layer
The surface electrode layers 18A and 18B are laminated on 17A and 17B. A hole 41 is formed in the surface electrode layer 18B at the bottom of the recess 11 (see FIG. 1B).

The laminated wiring structure is not limited to the above-mentioned one, but may be a multilayer structure. Surface electrode layer 18
A and 18B need not necessarily be provided. Surface electrode layer 18B
It is not always necessary to provide the conductive layer 17B and the insulating layers 16 and 14 below.

As shown in FIG. 8, a lens is provided on the front surface of the light passage hole 12 (the lower surface of the substrate 10 at a position corresponding to the light passage hole 12).
32 can be formed or implemented. This gives
Light emitted from the light passage hole 12 to the outside can be collected or collimated. Instead of the lens 32, a diffraction grating,
Various optical elements for separating, condensing, diffusing, deflecting light, and the like may be provided.

As shown in FIG. 9, the inner wall surface of the recess 11 formed in the substrate 10 can be formed almost vertically so as to be in close contact with the entire side surface of the surface-emitting type semiconductor light-emitting element 20. This can be formed by combining isotropic etching and anisotropic etching in the etching process of the silicon substrate 10. By increasing the contact area between the surface-emitting type semiconductor light-emitting element 20 and the silicon substrate 10, the light-emitting element 20 can be stably fixed in the concave portion 11. In order to insulate the light emitting element 20 and the silicon substrate 10 from each other, an insulating layer 14a is formed on the entire region in the recess 11, the inner surface of the light passage hole 12, and the bottom surface of the substrate 10 shown in FIG.
Are formed.

As shown in FIG. 10, the width of the crosslinked electrode portion 13a may be narrowed. A hole formed in the cross-linked electrode portion 13a is indicated by reference numeral 30a. The crosslinked electrode portion 13a is not limited to one side of the concave portion 11, but may be formed on a plurality of sides (for example, two opposite sides). 1 and 2 can also be formed on a plurality of sides.

As shown in FIG. 11A, a narrow bridge electrode portion may be warped upward due to the internal stress of the conductive layer and the insulating layer when forming the bridge electrode portion. Since the cross-linked electrode portion 13a is warped upward, the light emitting element 20 can be easily inserted into the concave portion 11, and the mounting thereof is facilitated. When the cross-linked electrode portion 13a is heated, the warp disappears as shown in FIG. 11 (B), and the first conductive layer 15A of the cross-linked electrode portion 30a contacts the lower electrode 16 of the light emitting element 20.

The surface-emitting type semiconductor light-emitting device 20 may be housed in the recess 11 upside down as described above.

Second Embodiment FIG. 12 shows a light source device according to a second embodiment. FIG. 12A is a plan view, and FIG.
It is sectional drawing which follows the XII-XII line of (A). Since the surface-emitting type semiconductor light emitting device 20 shown in FIG. 12B is the same as that shown in FIG. 2B, illustration of the internal structure of the surface-emitting type semiconductor light emitting device 20 is omitted.

The light source device of the second embodiment is shown in FIGS.
The structure will be clarified by describing the manufacturing process with reference to FIG. Note that detailed description of the same steps as those shown in FIGS. 3 to 7 will be omitted.

The thermal oxide films 14 and 42 are formed on the entire upper surface and lower surface of the silicon substrate 10 (FIG. 13A), and the thermal oxide film 42 where the light passage hole 12 is to be formed is removed (FIG. B)). Anisotropic etching is performed from the lower surface of the silicon substrate 10, and the light passage hole 12 is formed by shaving the substrate into a truncated cone shape (see FIG.
14 (A)).

The portion where the bridge electrode portion 13 is to be formed and the concave portion 11
All of the remaining right-side thermal oxide films 14 and 42 are removed except for the first insulating layer 14 on the right side of the portion where the film is to be formed (FIG. 14B).
). If the first insulating layer 14 is damaged by the etching for forming the light passage hole 12, all the thermal oxide films 14
Then, the first insulating layer 14 may be formed again only on the portion where the cross-linked electrode portion 13 is to be formed and on the right side of the concave portion 11. The first insulating layer 14 may be deposited on the entire upper surface of the substrate 10, and the first insulating layer 14 may be left only on the portion where the cross-linked electrode portion 13 is to be formed and the right side of the concave portion 11 by subsequent patterning.

On the upper surface of the silicon substrate 10, a resist 19 is deposited on the upper surface of the substrate 10 around the region other than the region where the recess 11 is to be formed, which is slightly smaller than this region (FIG. A)). Isotropic etching is performed from the upper surface of the substrate 10 to scrape the substrate 10 from the upper surface. The recess 11 is formed, and the bridge electrode 13 is formed.
(B)).

The resist 19 is removed. Except for the region where the first insulating layer 14 has already been formed,
On the inner surface of the substrate, the inner peripheral surface of the light passage opening 12 and the lower surface of the substrate 10.
An insulating layer 14A is formed (FIG. 16A).

Finally, a surface electrode layer is formed on the upper surface of the first insulating layer 14.
18A from the bottom of the recess 11 through the inner wall to the second
A surface electrode layer 18B is formed on the insulating layer 14A. A hole 41 is formed in the surface electrode layer 18B at the bottom of the recess 11 (see FIG.
16 (B)).

The mounting of the surface-emitting type semiconductor light-emitting element 20 in the recess 11 is performed as follows.

The surface emitting type semiconductor light emitting device 20 is stored in the recess 11 from a position obliquely above the recess 11 with the light emitting port 27 facing the light passing hole 12 and the hole 41. Next, while pressing one side of the lower surface side of the surface-emitting type semiconductor light-emitting element 20 against the cross-linking electrode section 13, the light-emitting element 20 is positioned so that the light emission port 27, the hole 41, and the light passage hole 12 coincide. I do. In this state, the entire substrate 10 is heated. Thereby, the upper surface electrode 25 and the surface electrode layer 18B are welded, and the light emitting element 20 is fixed in the concave portion 11. Bottom electrode
A conductive film 33 is formed by sputtering on the contact portion between the bridge electrode 26 and the surface electrode layer 18A in the cross-linked electrode portion 13, and the lower surface electrode is formed.
26 and the surface electrode layer 18A are electrically coupled. The conductive film 33 does not necessarily have to be formed.

As shown in FIG. 17, the space between the surface-emitting type semiconductor light emitting element 20 stored in the recess 11 and the inner wall of the recess 11 may be filled with an insulating resin 32. The filling of the insulating resin 32 ensures that the surface-emitting type semiconductor light emitting device 20 is securely fixed in the concave portion 11.
11 can be prevented from falling off.

Application Example FIG. 18 is a perspective view of a vibrator integrally formed with the light source device described above. FIG. 19 shows a state in which a surface-emitting type semiconductor light-emitting element is mounted on a movable portion of a vibrator. The surface-emitting type semiconductor light-emitting device is the same as the surface-emitting type semiconductor light-emitting device 20 shown in FIG. FIG. 20 shows XX-XX in FIG.
21 is a cross-sectional end view taken along a line, FIG. 21 is a cross-sectional end view taken along a line XXI-XXI in FIG. 18, and FIG. 22 is a cross-sectional end view taken along a line XXII-XXII in FIG.

The vibrator 60 includes a movable portion 61, a fixed portion 62, and a beam portion 63 for connecting and supporting the movable portion 61 to the fixed portion 62. These movable part 61, fixed part 62 and beam 63
Is integrally formed of, for example, silicon.

A concave portion 71 for storing the surface-emitting type semiconductor light emitting element 20 is formed on one surface of the movable portion 61.

In the concave portion 71 formed in the movable portion 61, a light passage hole 72 communicating with the back surface is formed. The surface-emitting type semiconductor light-emitting element 20 is positioned so that the light exit 27 and the light passage hole 72 coincide with each other, and is fixed in the recess 71.

The movable part 61, the fixed part 62 and the beam part of the vibrator 60
On the upper surface of 63, a laminated wiring layer is provided. Vibrator 60
The stacked wiring layer provided on the top is a surface emitting semiconductor light emitting device.
20 upper surface electrode 25 and lower surface electrode 26
It is for connecting to the fixing portion 62 through 63 respectively.

The lower insulating layer 14, the first conductive layer 15, and the intermediate insulating layer are formed on the entire surface of the movable portion 61, the fixed portion 62, and the beam portion 63.
16 are formed.

In the movable portion 61, a second conductive layer 17A and a surface electrode layer 18A are formed on the intermediate insulating layer 16 on the right side of the concave portion 11. The second conductive layer 17A is connected to the first conductive layer 15 through a hole 31 formed in the intermediate insulating layer 16. The surface electrode layer 18A and the second conductive layer 17A are not necessarily provided.
The first conductive layer 15 is connected to the lower electrode 26 of the surface-emitting type semiconductor light emitting device 20 through a hole 30a formed in the lower insulating layer 14 in the bridge electrode portion 73 (see FIG. 10 for the hole 31 and the hole 30a). .

In the fixed portion 62, the intermediate insulating layer on the right side thereof
On the second conductive layer 16, a second conductive layer 17C and a surface electrode layer 18C are formed. A hole 43 is formed in the intermediate insulating layer 16 on the right side of the fixing part 62. The second conductive layer 17C is connected to the first conductive layer 15 through a hole 43 formed in the intermediate insulating layer 16.
Therefore, the lower electrode 26 of the surface-emitting type semiconductor light-emitting element 20 is
Second conductive layer 17C and surface electrode layer through first conductive layer 15
Connected to 18C. Surface electrode layer 18C, second conductive layer 17
C, the intermediate insulating layer 16 on the right side of the fixing portion 62 is not necessarily provided.

On the other hand, in the movable portion 61, on the left side of the concave portion 11, the second conductive layer 17 B and the surface electrode layer 18 B
Are formed. The surface electrode layer 18B extends on the bottom surface of the recess 11 and is connected to the upper electrode 25 of the surface-emitting type semiconductor light-emitting device 20. The second conductive layer 17B and the surface electrode layer 18B extend from the beam 63 to the left half of the fixed part 62. Therefore, the surface electrode layer 18B on the fixing portion 62 is connected to the upper surface electrode 25 of the surface-emitting type semiconductor light emitting device 20.

The surface electrode layer 18C and the surface electrode layer 18 of the fixed portion 62
By performing wire bonding to B, a drive current can flow through the surface-emitting type semiconductor light emitting device 20.

The surface electrode layer 18C and the surface electrode layer 18 of the fixing portion 62
When current flows from B to the upper electrode 25 and the lower electrode 26 of the surface-emitting type semiconductor light-emitting device 20, the surface-emitting type semiconductor light-emitting device
20 emits light from its light exit ports 27 and 28.

The fixed portion 62 is subjected to vibration from a vibration device (not shown). The movable part 61 is formed asymmetrically with respect to the axis of the beam part 63. The beam 63 vibrates in the bending mode and the torsion mode. When the movable section 61 vibrates in two modes, the light emitted from the light emission ports 27 and 28 is two-dimensionally scanned. The light emitted from the light emission port 27 is applied to the object.
The emission direction of the light emitted from the light emission port 27 can be monitored for the light emitted from the light emission port 28 by disposing a light receiving element at a position facing the light emission port 28. By oscillating the fixed portion 62 at one of the resonance frequencies of the bending mode and the torsional mode, light can be scanned one-dimensionally.

FIG. 23 shows the configuration of an optical sensor device using a vibrator on which the surface-emitting type semiconductor light emitting device (semiconductor laser) shown in FIG. 19 is mounted as a light source. The illustration of the excitation drive circuit of the fixed portion is omitted.

The light source 81 is driven by the light source driving circuit 82, and the light source 81 generates a laser beam. The laser light may be pulsed light or continuous light. In any case, the waveform of the laser beam is determined according to the property of the object to be detected or measured, the item to be detected, and the like.

The laser light is supplied to a predetermined laser beam by an optical element (see FIG. 8) provided on the lower surface of the substrate as necessary.
Converted to a beam (eg, collimated or converted to slit light). The laser beam is
The light is projected toward the object Sb. The laser beam projected on the object Sb is light emitted from the light exit 27.

The reflected light from the object Sb enters the light receiving element 83 via a light receiving optical system provided as needed. The light receiving signal of the light receiving element 83 is converted into a predetermined light receiving signal (for example, converted into digital data) by the signal processing circuit 84 and input to the processing device 80.

On the other hand, the light emitted from the light emission port 28 of the surface-emitting type semiconductor light emitting element 20 directly enters the light receiving element 85. By detecting the light emitted from the light exit 28,
It is possible to monitor the direction, intensity, and the like of the light emitted from the light emission light 27. The light receiving signal of the light receiving element 85 is converted into a predetermined light receiving signal by the signal processing circuit 86 and input to the processing device 80.

The processing device 80 performs processing related to detection and measurement of an object based on the light receiving signal input from the signal processing circuit 84. For example, detection of the presence or absence of an object, recognition of the shape of the object, reading of a barcode, and other processing are performed. Further, the processing device 80 controls the light source driving circuit 82 and the vibration driving circuit based on the light receiving signal input from the signal processing circuit 85.

By providing a vibrator integrally with the substrate on which the light source drive circuit 82, the signal processing circuits 84 and 86, and the processing device 80 are mounted, it is possible to reduce the size and integration of the sensor device. Further, the light source device can be used not only as an optical sensor but also as an optical switch.

[Brief description of the drawings]

FIGS. 1A and 1B show a state in which a light emitting element is removed from a light source device of a first embodiment. FIG. 1A is a plan view showing a part of the light source device, and FIG. 1B is a cross section taken along line II of FIG. FIG.

FIGS. 2A and 2B show the light source device of the first embodiment, wherein FIG. 2A is a plan view showing a part of the light source device, and FIG. 2B is a sectional view taken along line II-II of FIG.

FIGS. 3A and 3B show a process for manufacturing a substrate on which a laminated wiring layer is formed.

FIGS. 4A and 4B show a process of manufacturing a substrate having a laminated wiring layer formed thereon.

FIGS. 5A and 5B show a process of manufacturing a substrate having a laminated wiring layer formed thereon.

FIGS. 6A and 6B show a process for manufacturing a substrate having a laminated wiring layer formed thereon.

FIGS. 7A and 7B show a process of manufacturing a substrate having a laminated wiring layer formed thereon.

FIG. 8 shows a modification of the first embodiment, and is a cross-sectional view of a light source device on which a lens is mounted.

9A and 9B show another modification of the first embodiment, wherein FIG. 9A is a plan view showing a part of the light source device, and FIG. 9B is a sectional view taken along line IX-IX of FIG. 9A. .

FIG. 10 is a plan view showing another modification of the first embodiment and showing a part of the light source device.

11A is a sectional view showing a part of the light source device before heating, and FIG. 11B is a sectional view showing a part of the light source device after heating.

12A and 12B show a second embodiment, in which FIG. 12A is a plan view showing a part of the light source device, and FIG. 12B is a sectional view taken along line XII-XII of FIG.

FIGS. 13A and 13B show a process of manufacturing a substrate having a laminated wiring layer formed thereon.

FIGS. 14A and 14B show a process of manufacturing a substrate having a laminated wiring layer formed thereon.

FIGS. 15A and 15B show a process of manufacturing a substrate having a laminated wiring layer formed thereon.

FIGS. 16A and 16B show a manufacturing process of a substrate having a laminated wiring layer formed thereon.

FIGS. 17A and 17B show a modification of the second embodiment, in which FIG. 17A is a plan view showing a part of the light source device, and FIG. 17B is a sectional view taken along line XVII-XVII of FIG.

FIG. 18 is a perspective view showing a vibrator integrally formed with the light source device.

FIG. 19 is a perspective view showing a vibrator on which a surface-emitting type semiconductor light-emitting element is mounted.

FIG. 20 is a sectional view taken along line XX-XX in FIG. 18;

FIG. 21 is a sectional view taken along line XXI-XXI of FIG. 18;

FIG. 22 is a sectional view taken along line XXII-XXII of FIG. 18;

FIG. 23 is a block diagram illustrating an example of an electrical configuration of a detection device using a light source device on which a surface-emitting type semiconductor light-emitting element is mounted.

[Explanation of symbols]

 10 Substrate 11 Recess 12 Light passage hole 13 Cross-linking electrode part 14 Lower insulating layer 15, 15A First conductive layer 16 Intermediate insulating layer 17A, 17B, 17C Second conductive layer 18A, 18B, 18C Surface electrode layer 19 Resist 20 Surface light emission -Type semiconductor light-emitting device 25 Upper electrode 26 Lower electrode 27, 28 Light emitting port 60 Transducer 61 Movable part 62 Fixed part 63 Beam part

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-53-139990 (JP, A) JP-A-3-1580 (JP, A) JP-A 8-122689 (JP, A) (58) Field (Int.Cl. ⁶ , DB name) H01L 31/00-33/00 H01S 3/18 G02B 26/00-26/12

Claims (8)

(57) [Claims] A concave portion is formed on a surface of a substrate at a position where a light emitting element is to be mounted, and the light emitting element is housed and fixed in the concave portion, and at least one of the protrusions extending from the surface of the substrate to an opening of the concave portion. A first bridge-type electrode is formed, a tip of the first bridge-type electrode is connected to at least one electrode of the light-emitting element, and the first bridge-type electrode is formed on a second surface of the substrate. The first bridge-type electrode is connected to a connection electrode, and the first cross-linking electrode is formed by a laminated wiring layer in which a plurality of conductive layers and insulating layers are stacked, and each of the conductive layers passes through a hole formed in the insulating layer. Light source devices that are electrically connected to each other. 2. A fourth electrode formed on a bottom surface of the concave portion, the third electrode being connected to another electrode of the light emitting element, and the third electrode being formed on a substrate surface. The light source device according to claim 1, wherein the light source device is connected to a connection electrode. 3. A concave portion is formed on a surface of the substrate at a position where the light emitting element is to be mounted, and the light emitting element is accommodated and fixed in the concave portion, and at least one of the protrusions extending from the surface of the substrate to the opening of the concave portion. A first bridge-type electrode is formed, a tip of the first bridge-type electrode is connected to at least one electrode of the light-emitting element, and the first bridge-type electrode is formed on a second surface of the substrate. A light emitting element connected to the connection electrode, wherein the light emitting element is a surface emitting type semiconductor light emitting element, and a light emitting hole connected to the back surface of the substrate is formed on a bottom surface of the concave portion; Is a light source device facing the light exit hole. 4. The light source device according to claim 3, wherein an optical element is provided at a position corresponding to the light exit hole on the back surface of the substrate. 5. The light source device according to claim 3, wherein a gap between a side surface of the light emitting element mounted in the recess and an inner wall of the recess is filled with an insulating material. 6. A concave portion is formed on a surface of a substrate at a place where an electric component is to be mounted, a bridge electrode protruding from an opening of the concave portion is formed on the substrate surface, and the bridge electrode is connected to the substrate surface for connection. A method for mounting an electrical component, wherein the electrical component is placed in a recess on the surface of a substrate, and the at least one electrode of the electrical component is connected to the bridge electrode. 7. A movable part, a fixed part to which vibration is applied,
An oscillator, comprising: an elastically deforming portion that supports the movable portion by connecting it to a fixed portion, wherein the movable portion is configured by the light source device according to any one of claims 1 to 5. 8. An optical scanning device comprising: the vibrator according to claim 7; and a vibrator for applying vibration to a fixed portion of the vibrator.