JP2953850B2 - Semiconductor substrate crack detector - Google Patents
Semiconductor substrate crack detectorInfo
- Publication number
- JP2953850B2 JP2953850B2 JP3118292A JP3118292A JP2953850B2 JP 2953850 B2 JP2953850 B2 JP 2953850B2 JP 3118292 A JP3118292 A JP 3118292A JP 3118292 A JP3118292 A JP 3118292A JP 2953850 B2 JP2953850 B2 JP 2953850B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- circuit
- chip
- wafer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体基板（以下、ウェ
ハーという）の割れ検出器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crack detector for a semiconductor substrate (hereinafter referred to as "wafer").
【０００２】[0002]
【従来の技術】従来のウェハーの割れ検知は製造装置内
で処理終了後回収したウェハーの枚数を数えて処理枚数
通りあるかどうかで判断していた。2. Description of the Related Art Conventionally, the detection of cracks in a wafer has been performed by counting the number of wafers collected after the processing in the manufacturing apparatus and judging whether the number of processed wafers is equal to the number of processed wafers.
【０００３】[0003]
【発明が解決しようとする課題】この従来の割れ検知方
法では、ウェハーの枚数を数えるまで割れたかどうかわ
からず、又ウェハーが一部欠けた状態だった場合に見す
ごして、次の工程へ送られるという問題があった。In this conventional crack detection method, it is not known whether the wafer has broken until the number of wafers is counted, and if the wafer is partially missing, it is sent to the next step. There was a problem that was.
【０００４】[0004]
【課題を解決するための手段】本発明のウェハー割れ検
出器は、投光器と受光器の間の光経路をウェハーのカケ
ラが通過することにより該受光器のレベル変化を起こす
光学式センサーと、前記光学式センサーのレベル変化を
入力してウェハーのカケラの大きさによる判別値を得る
判別回路と、前記判別回路からのパルス信号を計測する
カウンター回路と、前記カウンター回路からの計測値と
設定回路において設定された設定値とを比較して一致し
たら割れ検出の信号を出力する制御回路とを有して製造
装置で発生するウェハーのカケラの通過とカケラ以外の
通過とを判別することを可能にしたことを特徴とする。According to the present invention, there is provided a wafer crack detector, comprising: an optical sensor for causing a level change of a light receiving device when a chip of a wafer passes through an optical path between a light emitting device and a light receiving device; In the discriminating circuit which receives the level change of the optical sensor and obtains a discriminating value based on the size of the chip of the wafer, a counter circuit which measures the pulse signal from the discriminating circuit, produced have a control circuit that outputs a signal of the detected cracks After match by comparing the set value
Passage of wafers generated by the equipment and non-
It is characterized in that it is possible to determine the passage .
【０００５】すなわち本発明では、光学式センサーの投
光器と受光器の間をウェハーのカケラが通過すると受光
器の入力レベルが変化する。その入力レベルの変化を判
別回路でとらえ、カウンター回路へ出力する。カウンタ
ー回路はその出力をカウントし制御回路へカウンター値
として出力する。制御回路はプリセットされた設定値と
カウンター値を比較し一致したらウェハー割れ検出の信
号を出力する。That is, according to the present invention, the input level of the light-receiving device changes when the chip of the wafer passes between the light-emitting device and the light-receiving device of the optical sensor. The change in the input level is detected by the discriminating circuit and output to the counter circuit. The counter circuit counts the output and outputs it to the control circuit as a counter value. The control circuit compares the preset set value with the counter value, and outputs a signal for detecting a wafer crack when they match.
【０００６】[0006]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の構成図である。投光器１からでた光
Ａが受光器２に入っている。その光２の経路をウェハー
のカケラが横ぎると、受光器２の入力レベルが下がる。
その変化を判別回路３が判定し、パルスとしてカウンタ
ー回路４に出力する。カウンター回路４はカウントした
値を制御回路５に出力する。制御回路５は設定回路６か
ら設定された値とカウンター値を比較し一致したら割れ
検出の信号をだす。又制御回路５は一定時間内にカウン
ター値が設定値と一致しなければ自動的にカウンター回
路４へリセット信号を出しカウンター値をクリアーす
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram of the present invention. Light A emitted from the light projector 1 enters the light receiver 2. When the chip of the wafer crosses the path of the light 2, the input level of the light receiver 2 decreases.
The change is determined by the determination circuit 3 and output to the counter circuit 4 as a pulse. The counter circuit 4 outputs the counted value to the control circuit 5. The control circuit 5 compares the value set by the setting circuit 6 with the counter value, and outputs a crack detection signal when they match. If the counter value does not match the set value within a predetermined time, the control circuit 5 automatically sends a reset signal to the counter circuit 4 to clear the counter value.
【０００７】[0007]
【発明の効果】以上説明したように本発明は、ウェハー
のカケラを検出するようにしたので、割れが発生した時
点で製造装置へウェハー割れの信号を送ることができ
る。製造装置はその信号を受けて適切な対応をとること
ができる。又、カケラで判別するので、ウェハーの一分
が欠けた状態でも検出することができる。As described above, according to the present invention, a chip of a wafer is detected, so that a signal of a wafer crack can be sent to a manufacturing apparatus when a crack occurs. The manufacturing apparatus can take an appropriate response in response to the signal. Further, since the discrimination is made by the chip, it can be detected even in a state where one part of the wafer is missing.
【０００８】本発明の判別回路３の判別値はウェハーの
カケラの大きさにより任意に設定できる。製造装置で発
生するウェハーのカケラの大きさにあわせて設定し、制
御回路５への設定値は、ウェハーのカケラ以外の物が通
過することがある場合にそなえて、あらかじめ設定して
おく。ウェハーのカケラは一秒以内に数１０〜数１００
の値で通過していく為、製造装置の機構部の通過等の外
乱を設定しておくことで除くことができる。The discrimination value of the discrimination circuit 3 of the present invention can be arbitrarily set according to the size of the wafer chip. The value is set in accordance with the size of the chip of the wafer generated in the manufacturing apparatus, and the set value to the control circuit 5 is set in advance in case an object other than the chip of the wafer may pass. Wafer fragmentation is several tens to several hundreds within one second
, It can be eliminated by setting a disturbance such as passing through a mechanism of the manufacturing apparatus.
【図１】本発明の一実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
１ 投光器 ２ 受光器 ３ 判別回路 ４ カウンター回路 ５ 制御回路 ６ 設定器 Ａ 光の流れ DESCRIPTION OF SYMBOLS 1 Emitter 2 Receiver 3 Discrimination circuit 4 Counter circuit 5 Control circuit 6 Setting device A Light flow
Claims (1)
板のカケラが通過することにより該受光器のレベル変化
を起こす光学式センサーと、前記光学式センサーのレベ
ル変化を入力して半導体基板のカケラの大きさによる判
別値を得る判別回路と、前記判別回路からのパルス信号
を計測するカウンター回路と、前記カウンター回路から
の計測値と設定回路において設定された設定値とを比較
して一致したら割れ検出の信号を出力する制御回路とを
有して製造装置で発生する半導体基板のカケラの通過と
カケラ以外の通過とを判別することを可能にしたことを
特徴とする半導体基板割れ検出器。1. An optical sensor for causing a level change of a light receiving device when a chip of a semiconductor substrate passes through an optical path between a light emitting device and a light receiving device, and a semiconductor substrate receiving a level change of the optical sensor. A discriminating circuit that obtains a discriminant value according to the size of the chip, a counter circuit that measures a pulse signal from the discriminating circuit, and compares the measured value from the counter circuit with the set value set in the setting circuit to match. and passing the piece of semiconductor substrate that occur in closed to production equipment and a control circuit for cracking outputs a signal of detection After
A semiconductor substrate crack detector characterized in that it is possible to discriminate between passages other than broken pieces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3118292A JP2953850B2 (en) | 1992-02-19 | 1992-02-19 | Semiconductor substrate crack detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3118292A JP2953850B2 (en) | 1992-02-19 | 1992-02-19 | Semiconductor substrate crack detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05235130A JPH05235130A (en) | 1993-09-10 |
| JP2953850B2 true JP2953850B2 (en) | 1999-09-27 |
Family
ID=12324306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3118292A Expired - Fee Related JP2953850B2 (en) | 1992-02-19 | 1992-02-19 | Semiconductor substrate crack detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2953850B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3425664A1 (en) | 2017-07-07 | 2019-01-09 | Nxp B.V. | Integrated circuit with a seal ring |
-
1992
- 1992-02-19 JP JP3118292A patent/JP2953850B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05235130A (en) | 1993-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990615 |
|
| LAPS | Cancellation because of no payment of annual fees |