JP2953468B2 - Compound semiconductor device and surface treatment method thereof - Google Patents

Compound semiconductor device and surface treatment method thereof

Info

Publication number
JP2953468B2
JP2953468B2 JP15933089A JP15933089A JP2953468B2 JP 2953468 B2 JP2953468 B2 JP 2953468B2 JP 15933089 A JP15933089 A JP 15933089A JP 15933089 A JP15933089 A JP 15933089A JP 2953468 B2 JP2953468 B2 JP 2953468B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
treatment method
irregularities
surface treatment
sinx film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP15933089A
Other languages
Japanese (ja)
Other versions
JPH0324771A (en
Inventor
雅弘 野口
敏彦 井深
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15691464&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2953468(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Priority to JP15933089A priority Critical patent/JP2953468B2/en
Priority to US07/546,813 priority patent/US5040044A/en
Priority to KR1019900009103A priority patent/KR0179952B1/en
Priority to DE69008931T priority patent/DE69008931T2/en
Priority to EP90306788A priority patent/EP0404565B1/en
Publication of JPH0324771A publication Critical patent/JPH0324771A/en
Application granted granted Critical
Publication of JP2953468B2 publication Critical patent/JP2953468B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/318Inorganic layers composed of nitrides
    • H01L21/3185Inorganic layers composed of nitrides of siliconnitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はIII−V族化合物半導体装置及びその表面処
理加工方法に関するものである。
Description: TECHNICAL FIELD The present invention relates to a III-V compound semiconductor device and a surface treatment method thereof.

〔従来の技術〕 従来、III−V族化合物半導体、例えばAlGaAs半導体
からなる高輝度発光用LEDとしてホモ接合構造LEDに比べ
て、キャリアの注入効率が高く、高出力、高応答速度が
得られるシングルヘテロ接合構造LED、あるいはダブル
ヘテロ接合構造LEDが用いられている。
[Prior art] Conventionally, as a high-brightness light emitting LED made of a group III-V compound semiconductor, for example, an AlGaAs semiconductor, a single carrier having a higher carrier injection efficiency, a higher output, and a higher response speed than a homojunction structure LED is obtained. A hetero-junction structure LED or a double hetero-junction structure LED is used.

これらヘテロ接合構造LEDに特徴的なことは、光取り
出し側にAlAs混晶比Xの大きいAlxGa1-xAsが用いられて
いる点である。例えば、赤色発光高輝度LED用基板のエ
ピタキシャル成長の例を示すと、p型GaAs基板〔(10
0)面〕上にpクラッド層として液相成長法等によりZn
ドープAl0.75Ga0.25As層を200μm(p型)形成した
後、pアクティブ層としてZnドープAl0.35Ga0.65As層を
2〜3μm(p型)形成し、次いでnクラッド層として
TeドープAl0.75Ga0.25As層を50μm程度形成している。
そしてGaAs基板選択性エッチャントを用いて光吸収性Ga
As基板を除去して高輝度LEDチップを得ており、チップ
の表面の混晶比は0.75と高い。このようにAlAs混晶比の
大きなAlxGa1-xAs層は極めて酸化されやすく、そのた
め、発光特性の劣化を招き、素子寿命を著しく短くして
しまう原因となっており、樹脂封止した素子においても
同様であった。
What is characteristic of these heterojunction structure LEDs is that Al x Ga 1 -x As having a large AlAs mixed crystal ratio X is used on the light extraction side. For example, when an example of epitaxial growth of a substrate for a red light emitting high-brightness LED is shown, a p-type GaAs substrate [(10
0) plane] as a p-cladding layer on the
After forming a doped Al 0.75 Ga 0.25 As layer of 200 μm (p-type), a Zn-doped Al 0.35 Ga 0.65 As layer is formed as a p-active layer of 2 to 3 μm (p-type), and then as an n-cladding layer.
A Te-doped Al 0.75 Ga 0.25 As layer is formed with a thickness of about 50 μm.
Then, using a GaAs substrate selective etchant, the light absorbing Ga
A high-brightness LED chip is obtained by removing the As substrate, and the mixed crystal ratio on the chip surface is as high as 0.75. As described above, the Al x Ga 1 -x As layer having a large AlAs mixed crystal ratio is extremely easily oxidized, which causes deterioration of the light emission characteristics and significantly shortens the life of the device. The same was true for the device.

この対策としてSiNx膜を形成する方法が提案されてい
る。
As a countermeasure, a method of forming a SiNx film has been proposed.

また、表面における全反射を防止して外部量子効率を
上げるため表面に凹凸を設けることも提案されている。
It has also been proposed to provide irregularities on the surface to prevent total reflection on the surface and increase external quantum efficiency.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかしながら、従来のものにおいては、表面に凹凸を
設けるか、SiNx膜を形成するかのどちらかしか行われて
おらず、表面に凹凸を設けただけでは耐湿性に問題があ
るとともに、表面の酸化により素子寿命の点で問題があ
り、また単に保護膜としてSiNx膜を設けただけでは付着
強度が弱く、剥がれ易いという問題があった。
However, in the conventional device, only the formation of the unevenness on the surface or the formation of the SiNx film is performed, and simply providing the unevenness on the surface has a problem in the moisture resistance and the oxidation of the surface. Accordingly, there is a problem in terms of the element life, and there is a problem that the adhesion strength is weak and the film is easily peeled off simply by providing the SiNx film as the protective film.

本発明は上記課題を解決するためのもので、外部量子
効率を向上させるとともに、素子寿命を伸ばすことがで
きる化合物半導体装置及びその表面処理加工方法を提供
することを目的とする。
The present invention has been made to solve the above problems, and has as its object to provide a compound semiconductor device capable of improving external quantum efficiency and extending the life of an element, and a surface treatment method thereof.

〔課題を解決するための手段〕[Means for solving the problem]

本発明はIII−V族化合物半導体の表面に凹凸を形成
し、さらに凹凸表面上にSiNx膜を形成することを特徴と
するものである。
The present invention is characterized in that irregularities are formed on the surface of a III-V compound semiconductor, and a SiNx film is formed on the irregular surface.

第1図は本発明によるヘテロ接合高輝度発光LEDの構
造の一例を示す図で、1は裏電極、2はPクラッド層、
3はpアクティブ層、4はnクラッド層、5は表電極、
6は凹凸、7はSiNx膜である。
FIG. 1 is a view showing an example of the structure of a hetero-junction high-brightness light emitting LED according to the present invention, wherein 1 is a back electrode, 2 is a P cladding layer,
3 is a p active layer, 4 is an n clad layer, 5 is a front electrode,
Reference numeral 6 denotes irregularities, and reference numeral 7 denotes a SiNx film.

第1図に例として示すAlGaAs半導体からなる発光ダイ
オードは、pアクティブ層3をクラッド層2、4でサン
ドイッチし、その表と裏面にそれぞれ電極1、5を形成
する。これは、例えば電極を蒸着後、熱処理して半導体
との界面を合金化することにより行う。次に、電極を除
く発光ダイオードの全面に、サンドブラストや微粉末を
吹きつける等の物理的方法、またはエッチング等の化学
的方法で凹凸6を形成する。こうして、凹凸をつけた
後、その表面上に減圧CVD法、プラズマCVD法、スパッタ
リング法等によりSiNx膜を保護膜として形成する。
In the light-emitting diode made of an AlGaAs semiconductor shown as an example in FIG. 1, a p-active layer 3 is sandwiched between cladding layers 2 and 4, and electrodes 1 and 5 are formed on the front and back surfaces, respectively. This is performed, for example, by depositing an electrode and then heat-treating to alloy the interface with the semiconductor. Next, unevenness 6 is formed on the entire surface of the light emitting diode excluding the electrodes by a physical method such as sandblasting or spraying fine powder, or a chemical method such as etching. After forming the irregularities in this manner, a SiNx film is formed as a protective film on the surface by a reduced pressure CVD method, a plasma CVD method, a sputtering method, or the like.

こうして作製した発光ダイオードについて、実際に駆
動して得られる輝度のヒストグラムを求めたところ、第
2図のような結果が得られ、同様に凹凸のみ設けたも
の、或いはSiNx膜のみ形成したものについて測定したと
ころ第3図に示す結果が得られた。なお、図において横
軸は輝度(任意単位)、縦軸は個数(ただし、比較し易
いように最大値で規格化)である。
A histogram of the luminance obtained by actually driving the light emitting diode thus obtained was obtained. As a result, a result as shown in FIG. 2 was obtained. As a result, the result shown in FIG. 3 was obtained. In the figure, the horizontal axis represents luminance (arbitrary unit), and the vertical axis represents the number (however, standardized with a maximum value for easy comparison).

本発明においては平均輝度1929が得られたのに対し
て、従来のものは1373であり、本発明により輝度を向上
させることができる。
In the present invention, an average luminance of 1929 was obtained, whereas the conventional one is 1373, and the luminance can be improved by the present invention.

次に、SiNx膜のみ形成したLED、表面に凹凸のみ設け
たLED、本発明によるLEDについてライフ試験を行った結
果を第1表に示す。
Next, Table 1 shows the results of life tests performed on the LED having only the SiNx film, the LED having only the unevenness on the surface, and the LED according to the present invention.

表中、テストAはステップ1(温度85℃、相対湿度95
%の環境下で、駆動電流直流20mAで12時間駆動)、ステ
ップ2(温度−20℃、相対湿度100%の環境下で、駆動
電流直流20mAで12時間駆動)について、ステップ1+ス
テップ2を3回繰り返したものであり、テストBはテス
トAを行った後、さらにステップ3(温度85℃、相対湿
度95%の環境下で、駆動電流直流20mAで4時間駆動)、
ステップ4(温度−20℃、相対湿度100%の環境下で、
駆動電流直流20mAで4時間駆動)について、ステップ3
+ステップ4を30回繰り返したものであり、表中の数値
は輝度残存率(最初に測定した時の値に対する比率)を
示している。
In the table, test A is step 1 (temperature 85 ° C, relative humidity 95
% For 12 hours at a drive current of 20 mA) and Step 2 (12 hours of drive for 20 hours at a drive current of 20 mA in an environment of a temperature of -20 ° C and a relative humidity of 100%). The test B is the test A, and after the test A is performed, the step 3 is further performed (driving for 4 hours at a driving current of 20 mA DC in an environment of a temperature of 85 ° C. and a relative humidity of 95%),
Step 4 (In an environment with a temperature of -20 ° C and a relative humidity of 100%,
Step 4) (drive current 20mA DC for 4 hours)
+ Step 4 was repeated 30 times, and the numerical values in the table indicate the luminance remaining ratio (ratio to the value measured first).

第1表から分かるように、本発明によるものは輝度残
存率が大きく、寿命が大幅に延びることが分かる。
As can be seen from Table 1, it can be seen that the device according to the present invention has a large luminance retention rate and a long life.

なお、凹凸の大きさは光を散乱し、かつSiNx膜の付着
強度が保てればよく、特に限定なないが、好ましくは凹
凸の谷から谷、または山から山の距離は0.1μm以上で
ある。
The size of the unevenness is not particularly limited as long as the light can be scattered and the adhesion strength of the SiNx film can be maintained.

〔作用〕[Action]

本発明は、III−V族化合物半導体表面に凹凸を形成
して全反射を防止するとともに、凹凸表面上にSiNx膜を
形成したものであり、表面凹凸により外部量子効率を向
上させることができ、さらに凹凸の上にSiNx膜を設けた
のでその付着強度が増大し、その結果SiNx膜が剥がれる
ことがなくなり、耐湿性が向上し、酸化を防止してLED
の寿命を延ばすことができる。
The present invention forms irregularities on the surface of the group III-V compound semiconductor to prevent total reflection, and forms a SiNx film on the irregularities.The surface irregularities can improve external quantum efficiency. Furthermore, since the SiNx film is provided on the irregularities, the adhesion strength increases, and as a result, the SiNx film does not come off, improving the moisture resistance and preventing oxidation.
Life can be extended.

〔実施例〕〔Example〕

以下、実施例を説明する。 Hereinafter, examples will be described.

電極を蒸着後、熱処理して合金電極を形成したAlGaAs
−LEDウエハを過酸化水素水:アンモニア=1:1に混合し
た液に1分間つけた後、30秒間水洗し、さらに3%HCl
水溶液に5分間つけてエッチングし、15分間の水洗をお
こないメチルアルコールについて中和し乾燥させた。こ
のようにして凹凸を形成したウエハ面上にPCVD法により
SiNx膜を約3000Å製膜した。凹凸処理により外部量子効
率は約40%向上し、SiNx膜の形成で3000時間のライフテ
ストにも輝度の劣化が見られず良好であった。
AlGaAs deposited electrode and heat treated to form alloy electrode
-An LED wafer is immersed in a liquid mixture of hydrogen peroxide solution: ammonia = 1: 1 for 1 minute, washed with water for 30 seconds, and further added with 3% HCl.
The resultant was dipped in an aqueous solution for 5 minutes, etched, washed with water for 15 minutes, neutralized with methyl alcohol, and dried. By the PCVD method on the wafer surface with the irregularities formed in this way
About 3000 mm of SiNx film was formed. The external quantum efficiency was improved by about 40% due to the unevenness treatment, and the formation of the SiNx film showed no deterioration in luminance even in a 3000-hour life test, which was favorable.

〔発明の効果〕〔The invention's effect〕

以上のように本発明によれば、III−V族化合物半導
体表面を凹凸処理することによって光の取り出し効率を
上げ、その凹凸表面上にSiNx膜を形成することで膜自体
の付着強度が高められる。これによってSiNx膜の剥がれ
がなくなり、耐湿性が格段に向上し、AlGaAsの酸化によ
るLEDチップの劣化が逓減されて寿命特性を向上させる
ことができる。
As described above, according to the present invention, the light extraction efficiency is increased by subjecting the III-V compound semiconductor surface to unevenness, and the adhesion strength of the film itself is increased by forming a SiNx film on the uneven surface. . As a result, the SiNx film does not peel off, the moisture resistance is remarkably improved, the deterioration of the LED chip due to the oxidation of AlGaAs is gradually reduced, and the life characteristics can be improved.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の高輝度発光LEDの構造の一例を示す
図、第2図は本発明のLEDについての輝度ヒストグラム
を示す図、第3図は従来のLEDについての輝度ヒストグ
ラムを示す図である。 1…裏電極、2…Pクラッド層、3…Pアクティブ層、
4…Nクラッド層、5…表電極、6…凹凸、7…SiNx
膜。
FIG. 1 is a diagram showing an example of the structure of the high-brightness light emitting LED of the present invention, FIG. 2 is a diagram showing a luminance histogram of the LED of the present invention, and FIG. 3 is a diagram showing a luminance histogram of a conventional LED. is there. 1. Back electrode, 2. P cladding layer, 3. P active layer
4 N cladding layer, 5 front electrode, 6 unevenness, 7 SiNx
film.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−20383(JP,A) 特開 昭63−27072(JP,A) 特公 昭52−38397(JP,B2) ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-62-20383 (JP, A) JP-A-63-27072 (JP, A) JP-B-52-38397 (JP, B2)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】混晶比xが0<x<1であるAlxGa1-xAs半
導体であって、表面に凹凸が形成されるとともに、凹凸
表面上にSiNx膜が形成されていることを特徴とする化合
物半導体装置。
1. An Al x Ga 1 -xAs semiconductor having a mixed crystal ratio x of 0 <x <1, wherein irregularities are formed on the surface and a SiNx film is formed on the irregular surface. A compound semiconductor device characterized by the above-mentioned.
【請求項2】混晶比xが0<x<1であるAlxGa1-xAs半
導体の表面処理加工方法であって、物理的または化学的
方法により表面に凹凸を形成後、減圧CVD法、プラズマC
VD法、またはスパッタリング法により凹凸表面上にSiNx
膜を形成したことを特徴とする表面処理加工方法。
2. A mixed crystal ratio x is 0 <a Al x Ga 1-x As semiconductor surface treatment method is a x <1, after forming a physical or irregularities on the surface by chemical methods, low pressure CVD Method, plasma C
SiNx on uneven surface by VD method or sputtering method
A surface treatment method comprising forming a film.
JP15933089A 1989-06-21 1989-06-21 Compound semiconductor device and surface treatment method thereof Expired - Fee Related JP2953468B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP15933089A JP2953468B2 (en) 1989-06-21 1989-06-21 Compound semiconductor device and surface treatment method thereof
US07/546,813 US5040044A (en) 1989-06-21 1990-06-20 Compound semiconductor device and method for surface treatment
KR1019900009103A KR0179952B1 (en) 1989-06-21 1990-06-20 Compound semiconductor device and method for surface treatment
DE69008931T DE69008931T2 (en) 1989-06-21 1990-06-21 Compound semiconductor device and method for its surface treatment.
EP90306788A EP0404565B1 (en) 1989-06-21 1990-06-21 Compound semiconductor device and method of surface treatment of such a device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15933089A JP2953468B2 (en) 1989-06-21 1989-06-21 Compound semiconductor device and surface treatment method thereof

Publications (2)

Publication Number Publication Date
JPH0324771A JPH0324771A (en) 1991-02-01
JP2953468B2 true JP2953468B2 (en) 1999-09-27

Family

ID=15691464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15933089A Expired - Fee Related JP2953468B2 (en) 1989-06-21 1989-06-21 Compound semiconductor device and surface treatment method thereof

Country Status (5)

Country Link
US (1) US5040044A (en)
EP (1) EP0404565B1 (en)
JP (1) JP2953468B2 (en)
KR (1) KR0179952B1 (en)
DE (1) DE69008931T2 (en)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2030368C (en) * 1989-11-22 2000-03-28 Toshihiro Kato Light-emitting diode having light reflecting layer
JPH04264781A (en) * 1991-02-20 1992-09-21 Eastman Kodak Japan Kk Light-emitting diode array
JP2655943B2 (en) * 1991-02-28 1997-09-24 シャープ株式会社 Semiconductor light emitting device and method of manufacturing the same
JP2791525B2 (en) * 1992-04-16 1998-08-27 三菱電機株式会社 Method of selecting antireflection film and antireflection film selected by the method
DE4218806A1 (en) * 1992-06-06 1993-12-09 Telefunken Microelectron Mesa LED with n-doped semiconductor substrate - has depressions formed over surface of p-doped epitaxial layer, pref. in edge region and extending to mesa flank
DE4305296C3 (en) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Method of manufacturing a radiation emitting diode
TW230822B (en) * 1993-03-02 1994-09-21 Sumitomo Electric Industries
US5639674A (en) * 1994-03-14 1997-06-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
DE19509262C2 (en) * 1995-03-15 2001-11-29 Siemens Ag Semiconductor component with plastic sheathing and method for its production
DE19536438A1 (en) * 1995-09-29 1997-04-03 Siemens Ag Semiconductor device and manufacturing process
DE19537545A1 (en) 1995-10-09 1997-04-10 Telefunken Microelectron Luminescence diode manufacturing method with layer group contg. pre-junction
DE19537544A1 (en) * 1995-10-09 1997-04-10 Telefunken Microelectron Luminescence diode
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
DE19632627A1 (en) 1996-08-13 1998-02-19 Siemens Ag Method for producing a light-emitting and / or receiving semiconductor body
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
ES2226169T3 (en) 1997-08-29 2005-03-16 Cree, Inc. ISSUING DIODE OF THE ROBUST GROUP III LIGHT FOR HIGH RELIABILITY IN ENCAPSULATION HABITUAL APPLICATIONS.
JP3503439B2 (en) * 1997-09-11 2004-03-08 日亜化学工業株式会社 Nitride semiconductor device
JPH1197742A (en) * 1997-09-22 1999-04-09 Nichia Chem Ind Ltd Nitride semiconductor element
US6013540A (en) * 1998-05-01 2000-01-11 Lucent Technologies, Inc. Laser diode with substrate-side protection
US7253445B2 (en) 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
EP2315277A3 (en) 1998-07-28 2018-01-10 Philips Lighting Holding B.V. Devices for emitting radiation with a high efficiency
JP2001057426A (en) * 1999-06-10 2001-02-27 Fuji Electric Co Ltd High voltage semiconductor device and method for fabrication
US6277665B1 (en) 2000-01-10 2001-08-21 United Epitaxy Company, Ltd. Fabrication process of semiconductor light-emitting device with enhanced external quantum efficiency
JP2001303020A (en) * 2000-04-24 2001-10-31 Sunstar Inc Transparent liquid composition
DE10051465A1 (en) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Method for producing a GaN-based semiconductor component
CN1292494C (en) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 Radiation-emitting semiconductor element and method for producing same
JP5523277B2 (en) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Light emitting semiconductor device and method for manufacturing light emitting semiconductor device
DE10020464A1 (en) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride
US7319247B2 (en) 2000-04-26 2008-01-15 Osram Gmbh Light emitting-diode chip and a method for producing same
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
AU6071501A (en) 2000-06-08 2001-12-17 Showa Denko Kabushiki Kaisha Semiconductor light-emitting device
TW472400B (en) 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
WO2002015281A2 (en) * 2000-08-17 2002-02-21 Power Signal Technologies, Inc. Glass-to-metal hermetically sealed led array
WO2002041364A2 (en) * 2000-11-16 2002-05-23 Emcore Corporation Led packages having improved light extraction
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
KR20030052060A (en) * 2001-12-20 2003-06-26 엘지전자 주식회사 light emitting device and method for manufacturing the same
JP3776824B2 (en) * 2002-04-05 2006-05-17 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US7071494B2 (en) * 2002-12-11 2006-07-04 Lumileds Lighting U.S. Llc Light emitting device with enhanced optical scattering
JP2007529105A (en) 2003-07-16 2007-10-18 松下電器産業株式会社 Semiconductor light emitting device, method of manufacturing the same, lighting device and display device
TW200505042A (en) * 2003-07-17 2005-02-01 South Epitaxy Corp LED device
JP2005116615A (en) * 2003-10-03 2005-04-28 Dowa Mining Co Ltd Semiconductor light emitting element and its manufacturing method
DE102004029412A1 (en) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip and method for producing such a semiconductor chip
US7772605B2 (en) * 2004-03-19 2010-08-10 Showa Denko K.K. Compound semiconductor light-emitting device
WO2005104236A2 (en) * 2004-04-15 2005-11-03 Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8035113B2 (en) * 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
DE102005013894B4 (en) * 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Electromagnetic radiation generating semiconductor chip and method for its production
KR101154744B1 (en) * 2005-08-01 2012-06-08 엘지이노텍 주식회사 Nitride light emitting device and fabrication method thereof
DE102005055293A1 (en) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips and thin-film semiconductor chip
US8101961B2 (en) 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
DE102007004303A1 (en) * 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Thin-film semiconductor device and device composite
KR100820546B1 (en) * 2006-09-07 2008-04-07 엘지이노텍 주식회사 Semiconductor light-emitting device and Manufacturing method thereof
DE102007004304A1 (en) * 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Thin-film light emitting diode chip, has layer stack made of primary radiation surfaces lying opposite to each other so that thin-film light emitting diode chip has two primary radiation directions
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
KR100872717B1 (en) 2007-06-22 2008-12-05 엘지이노텍 주식회사 Light emitting device and manufacturing method thereof
KR20090070980A (en) * 2007-12-27 2009-07-01 삼성전기주식회사 Nitride semiconductor light emitting device and method of manufacturing the same
WO2009111790A1 (en) * 2008-03-07 2009-09-11 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
CN101630706B (en) * 2008-07-16 2011-02-16 玉晶光电股份有限公司 Forward luminescent light-emitting diode structure
TW201005997A (en) * 2008-07-24 2010-02-01 Advanced Optoelectronic Tech Rough structure of optoeletronics device and fabrication thereof
JP2010045288A (en) * 2008-08-18 2010-02-25 Shin Etsu Handotai Co Ltd Light-emitting element and manufacturing method thereof
KR101023480B1 (en) * 2008-12-16 2011-03-21 광전자 주식회사 Led chip with a and manufacturing methods thereof
JP5321886B2 (en) * 2009-02-06 2013-10-23 ソニー株式会社 Semiconductor element
WO2013114270A1 (en) * 2012-02-02 2013-08-08 Koninklijke Philips N.V. Producing light emitting devices at variable flux levels

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916513A (en) * 1965-09-28 1990-04-10 Li Chou H Dielectrically isolated integrated circuit structure
CS183856B1 (en) * 1975-09-19 1978-07-31 Jiri Sulc Device for preserving or transport microorganisms
DE3310373A1 (en) 1983-03-22 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Method of producing light-emitting diodes
JPS6220383A (en) * 1985-07-18 1987-01-28 Nec Corp Compound semiconductor device
JPS6327072A (en) * 1986-07-18 1988-02-04 Fujitsu Ltd End face light emitting type diode and manufacture thereof

Also Published As

Publication number Publication date
EP0404565A1 (en) 1990-12-27
KR910002020A (en) 1991-01-31
US5040044A (en) 1991-08-13
EP0404565B1 (en) 1994-05-18
DE69008931D1 (en) 1994-06-23
KR0179952B1 (en) 1999-03-20
DE69008931T2 (en) 1994-12-08
JPH0324771A (en) 1991-02-01

Similar Documents

Publication Publication Date Title
JP2953468B2 (en) Compound semiconductor device and surface treatment method thereof
KR100323997B1 (en) Light emitting diodes and manufacturing method
JPH10107316A (en) Semiconductor light-emitting device of iii group nitride
JP2004153241A (en) Semiconductor light emitting device and method of manufacturing same
EP0616377B1 (en) Semiconductor light-emitting element and method for its manufacturing
US7135713B2 (en) Light emitting diode and method for manufacturing the same
JP2002344019A (en) Light-emitting diode and manufacturing method therefor
JP2002368273A (en) Semiconductor light-emitting device
JP2001085742A (en) Semiconductor light emitting element and its manufacturing method
JPH09116191A (en) Manufacture of light emitting diode
JP3507716B2 (en) Method for manufacturing semiconductor light emitting device
JP3239350B2 (en) Electrode of n-type nitride semiconductor layer
JPH10308533A (en) Galium-nitride-based compound semiconductor light emitting element, its manufacture and light emitting element
JP3410166B2 (en) Red light emitting diode element
JP2003309285A (en) Method for manufacturing iii nitride compound semiconductor element
JP2003101071A (en) Semiconductor light-emitting device
JP4108439B2 (en) Light emitting device manufacturing method and light emitting device
JP3700767B2 (en) Semiconductor light emitting device
JP2874948B2 (en) Method for manufacturing semiconductor light emitting device
JP3117203B2 (en) Light emitting diode and method of manufacturing the same
JP4065686B2 (en) Optical semiconductor device manufacturing method and optical semiconductor device
JP2770707B2 (en) Manufacturing method of AlGaInP-based light emitting device chip
JP2005136136A (en) Method of manufacturing semiconductor device, and method of manufacturing wafer
CN213583840U (en) Perpendicular UV LED chip
JP2004356279A (en) Method for manufacturing semiconductor light emitting element

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees