JP2931725B2 - Superconducting element - Google Patents
Superconducting elementInfo
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- JP2931725B2 JP2931725B2 JP4245117A JP24511792A JP2931725B2 JP 2931725 B2 JP2931725 B2 JP 2931725B2 JP 4245117 A JP4245117 A JP 4245117A JP 24511792 A JP24511792 A JP 24511792A JP 2931725 B2 JP2931725 B2 JP 2931725B2
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- superconducting
- current
- layer
- superconducting element
- superconductor
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、超電導素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a superconducting element.
【０００２】[0002]
【従来の技術】超電導性の強い超電導体の間に、超電導
性の弱い部分、すなわち超電導性がしみ出す程度の薄い
常伝導体、絶縁体、粒界、超電導体のくびれ、超電導性
の弱い超電導体等、またはこれらの組み合わせたものを
導入し、この領域を横切ってある大きさの電流（その臨
界電流を超える電流）を流した場合に、この領域に沿っ
て量子化磁束が通り抜けることを利用した超電導素子
は、デバイス応用を目指して、活発に研究されている。2. Description of the Related Art A portion having a weak superconductivity, that is, a normal conductor, an insulator, a grain boundary, a constriction of a superconductor, a superconductor having a weak superconductivity, a superconductivity having a weak superconductivity is provided between superconductors having a strong superconductivity. Introduce a body or a combination of these, and use the fact that when a certain amount of current (current exceeding its critical current) flows across this region, the quantized magnetic flux passes along this region The superconducting element has been actively studied for device application.
【０００３】なかでも、このような超電導素子の一種で
あるジョセフソン素子は、超高速、超高感度、直流から
超高周波にわたる帯域等の優れた特徴を有し、超高感度
磁気センサや、超高速計算機素子、超高周波素子等とし
て着目されており、研究開発が活発に行われている。現
在、その幾つかは実用段階にある。[0003] Among them, a Josephson element, which is a kind of such a superconducting element, has excellent characteristics such as an ultra-high speed, an ultra-high sensitivity, and a band from DC to an ultra-high frequency. Attention has been paid to high-speed computer elements, ultrahigh-frequency elements, and the like, and research and development are being actively conducted. At present, some are in practical use.
【０００４】[0004]
【発明が解決しようとする課題】ところで、このような
超電導素子を含む超電導回路の大部分は、出力インピー
ダンスや出力が小さく、常温機器と接続する際に、イン
ピーダンスや動作レベルの点で整合性が悪く、超電導素
子としての本来の優れた性質を十分に生かすことができ
ないという問題を有していた。Most superconducting circuits including such a superconducting element have a low output impedance and a low output, and when connected to a room-temperature device, have a high degree of consistency in terms of impedance and operating level. Unfortunately, there is a problem that the original excellent properties as a superconducting element cannot be fully utilized.
【０００５】一方、インピーダンス変換を行う超電導素
子として、超電導トランスが知られているが、直流にお
いてはインピーダンス変換することができない。また、
超電導回路では、 1Hz以下の超低周波から超高周波まで
と、広い帯域をもつ回路が構成できることから、直流か
ら使用できるインピーダンス変換の機能を持つ超電導素
子が望まれていた。On the other hand, a superconducting transformer is known as a superconducting element for performing impedance conversion, but cannot perform impedance conversion in direct current. Also,
In the superconducting circuit, a circuit having a wide band from very low frequency of 1 Hz or less to very high frequency can be configured. Therefore, a superconducting element having an impedance conversion function that can be used from direct current has been desired.
【０００６】本発明は、このような課題に対処するため
になされたもので、インピーダンス変換機能や電流−電
圧変換機能を有し、例えば超電導回路と常温回路との接
続を容易にする超電導素子を提供することを目的として
いる。SUMMARY OF THE INVENTION The present invention has been made to address such a problem, and a superconducting element having an impedance converting function and a current-voltage converting function, for example, for facilitating connection between a superconducting circuit and a room temperature circuit is provided. It is intended to provide.
【０００７】[0007]
【課題を解決するための手段】本発明の超電導素子は、
素子電極を構成する２層の超電導体層間に、少なくとも
１層の超電導体層を介在させると共に、これら各超電導
体層間に近接する超伝導体層間を弱い超電導性で接続す
る接続層を挿入した構造を具備し、前記超電導体層のう
ち少なくとも１層を注入電極とすると共に、この注入電
極を構成する超電導体層から少なくとも１つの端子を取
り出した超電導素子であって、前記超電導体層と接続層
との積層方向に電流を流した際に、前記超電導性の弱い
接続層の端部で生成された量子化磁束が、前記超電導性
の弱い接続層に沿って運動することにより発生する電圧
を利用して動作するよう構成したことを特徴としてい
る。The superconducting element of the present invention comprises:
A structure in which at least one superconductor layer is interposed between two superconductor layers constituting an element electrode, and a connection layer for weakly superconducting connection between superconductor layers adjacent to each superconductor layer is inserted. A superconducting element comprising at least one of the superconductor layers as an injection electrode and at least one terminal taken out of a superconductor layer forming the injection electrode , wherein the superconductor layer and a connection layer are provided.
When a current flows in the laminating direction, the superconductivity is weak.
The quantization magnetic flux generated at the end of the connection layer is
It is configured to operate using a voltage generated by moving along a weak connection layer .
【０００８】[0008]
【作用】超電導性の強い部分を超電導性の弱い部分を介
して直列接続したものを、全体を一つの超電導体として
考えると、磁束が内部に侵入しないようなマイスナー状
態では、電流は超電導体の端の部分のみ流れることがで
きる。ここで、図１（ａ）に示すように、超電導性の強
い部分１と超電導性の弱い部分２とを多数個密に直列接
続したものに対して、超電導性の強い部分１の最上部１
ａから最下部１ｅに向けて、すなわち直列接続されてい
る方向に電流を流したとすれば、電流（図中、矢印Ａで
示す）は端しか流れられないために、それぞれ臨界電流
をもつ各超電導性の強い部分１ａ〜１ｆにおいても、そ
の端の部分に電流Ａが分流して、片寄って電流が流れ
る。[Function] Considering that the superconducting portion is connected in series through the weak superconducting portion as a single superconductor, in the Meissner state where the magnetic flux does not enter inside, the current flows through the superconductor. Only the edge can flow. Here, as shown in FIG. 1A, the uppermost part 1 of the part 1 having strong superconductivity is different from the part in which many parts 1 having strong superconductivity and the parts 2 having weak superconductivity are connected in series.
If a current flows from a to the lowermost part 1e, that is, in a direction connected in series, a current (indicated by an arrow A in the drawing) can flow only at an end, and therefore, each having a critical current. Even in the portions 1a to 1f having strong superconductivity, the current A is shunted to the end portions thereof, and the current flows in one direction.
【０００９】ここで、中間に存在する超電導性の強い部
分（１ｂ〜１ｄ）のいずれかに、外部から電流を注入し
たとする。ここから注入した電流（図中、矢印Ｂで示
す）も、また端の部分しか流れられず、図１（ｂ）に示
すように分流する。従って、注入電流Ｂと初めに流した
電流Ａとが、強め合う部分と弱め合う部分とができる。
さらに、注入電流Ｂを増やしていくと、電流を強め合う
端の部分で臨界電流を超え、各超電導性の弱い部分２が
電圧状態に移り、端の部分で生成された量子化磁束が超
電導性の弱い部分２に沿って運動を始める。さらに注入
電流Ｂを大きくすると、端で生成される量子化磁束の数
が増え、全体にかかる電圧も増加する。Here, it is assumed that a current is externally injected into any of the intermediate portions (1b to 1d) having strong superconductivity. The electric current (indicated by an arrow B in the figure) injected from here also flows only at the end portion, and shunts as shown in FIG. 1 (b). Therefore, a part where the injection current B and a part of the current A that flows first are strengthened and weakened.
Further, when the injection current B is increased, the critical current is exceeded at the end portion where the current is strengthened, and each superconductivity weak portion 2 shifts to a voltage state, and the quantized magnetic flux generated at the end portion becomes superconductivity. Start exercising along weak part 2 of the body. When the injection current B is further increased, the number of quantized magnetic fluxes generated at the end increases, and the voltage applied to the whole increases.
【００１０】これにより、中間の超電導性の強い部分
（１ｂ〜１ｄ）に設けた端子３、すなわち超電導性の弱
い部分２を横切る回数が少ない端子３を入力端子とし、
多くの超電導性の弱い部分２を横切る、直列接続の両端
の端子４、５を出力端子として使えば、それぞれ電圧状
態におけるインピーダンスは、超電導性の弱い部分２の
個数で決まるために、低いインピーダンスを高いインピ
ーダンスに変換する、直流から高周波まで使用できるイ
ンピーダンス変換素子や電流−電圧変換素子として機能
する。Accordingly, the terminal 3 provided in the intermediate portion having high superconductivity (1b to 1d), that is, the terminal 3 which has a small number of times of traversing the portion 2 having low superconductivity, is used as an input terminal.
If the terminals 4 and 5 at both ends of the series connection that cross many weak superconducting portions 2 are used as output terminals, the impedance in the voltage state is determined by the number of the weak superconducting portions 2, so that a low impedance is used. It functions as an impedance conversion element or a current-voltage conversion element that can be used from DC to high frequency to convert to high impedance.
【００１１】上記においては、中間に存在する超電導性
の強い部分（１ｂ〜１ｅ）の一つ（１ｅ）から端子を 1
つ取り出した場合について説明したが、例えば図２に示
すように、一つの超電導性の強い部分１ｅから複数の端
子（３ａ、３ｂ）を取り出したり、あるいは図３に示す
ように、複数の超電導性の強い部分（１ｂ〜１ｅ）から
端子（６ａ〜６ｄ）を取り出す等によって、電圧状態に
なるしきい値を変化させることも可能である。さらに、
外部から磁界を印加し、この遮蔽電流と各端子から流し
込んだ電流が各所で強め合ったり、弱め合ったりするこ
とを利用して、出力インピーダンスを変化させることも
可能である。また、素子の上方か下方に超電導グランド
プレーンを設けることも可能である。In the above, one terminal (1e) of one of the intermediate portions (1b to 1e) having strong superconductivity is connected to one terminal.
Although the description has been given of the case where one terminal is taken out, for example, as shown in FIG. 2, a plurality of terminals (3a, 3b) are taken out from one strong superconducting portion 1e, or as shown in FIG. By taking out the terminals (6a to 6d) from the portions (1b to 1e) where the intensity is high, it is possible to change the threshold at which the voltage state is reached. further,
It is also possible to change the output impedance by utilizing the fact that a magnetic field is applied from the outside and the shielding current and the current flowing from each terminal reinforce or weaken at various places. It is also possible to provide a superconducting ground plane above or below the element.
【００１２】すなわち、超電導性の強い部分と弱い部分
とを交互に多数個密に直列接続すると共に、最上部と最
下部の素子電極に接続した端子の他に、少なくとも 1個
の端子を少なくとも 1層の注入電極を構成する超電導性
の強い部分に接続して、注入電流を流すことによって、
超電導性の弱い部分に侵入する量子化磁束の運動を用い
て、電流−電圧特性を変調することが可能となる。これ
により、インピーダンス変換や増幅を行うことができ
る。That is, a large number of superconductive portions and a weak superconductive portion are alternately and densely connected in series, and at least one terminal is connected to at least one terminal in addition to the terminal connected to the uppermost and lowermost device electrodes. By connecting the injection electrode of the layer to the strong superconducting part that constitutes the injection electrode and flowing the injection current,
It is possible to modulate the current-voltage characteristics by using the motion of the quantized magnetic flux penetrating into the weakly superconductive portion. Thereby, impedance conversion and amplification can be performed.
【００１３】[0013]
【実施例】以下、本発明の実施例について図面を参照し
て説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００１４】図４は、本発明を用いて構成した図１に相
当する超電導素子の構造の一例を模式的に示す図であ
る。同図において、１１は絶縁性基板であり、この絶縁
性基板１１上には 6層の超電導体層１２が、これら超電
導体層１２間を弱い超電導性で接続する接続層として、
例えば常伝導体層１３をそれぞれ介して積層形成されて
いる。FIG. 4 is a diagram schematically showing an example of the structure of a superconducting element corresponding to FIG. 1 constructed using the present invention. In the figure, reference numeral 11 denotes an insulating substrate, and six superconducting layers 12 are formed on the insulating substrate 11 as connecting layers for connecting the superconducting layers 12 with weak superconductivity.
For example, they are stacked and formed with the normal conductor layer 13 interposed therebetween.
【００１５】上記 6層の超電導体層１２のうち、最下層
の超電導体層は下部電極１４を構成しており、端子取出
し部１４ａを有している。また、下から 2層目の超電導
体層は注入電極１５を構成しており、絶縁性平坦化膜１
６を介して、 1つの端子取出し部１５ａが設けられてい
る。さらに、最上層の超電導体層は上部電極１７を構成
しており、同様な層間絶縁膜１８を介して、端子取出し
部１７ａが設けられている。上記各端子取出し部１７
ａ、１４ａ、１５ａには、それぞれ端子１９、２０、２
１が接続されている。なお、電気的な接続は図１に示し
た通りである。The lowermost superconductor layer among the six superconductor layers 12 constitutes a lower electrode 14, and has a terminal extraction portion 14a. The second superconductor layer from the bottom constitutes the injection electrode 15, and the insulating flattening film 1 is formed.
6, one terminal extraction portion 15a is provided. Further, the uppermost superconductor layer constitutes the upper electrode 17, and a terminal extraction portion 17a is provided via a similar interlayer insulating film 18. Each terminal extraction section 17
a, 14a, and 15a respectively have terminals 19, 20, 2
1 is connected. The electrical connection is as shown in FIG.
【００１６】また、図５は本発明を用いて構成した図２
に相当する超電導素子の構造の一例を模式的に示す図で
あり、下から 2層目の注入電極１５を構成する超電導体
層に、 2つの端子取出し部１５ａ、１５ｂを設けると共
に、それぞれに端子２２、２３を接続した以外は、図３
に示す超電導素子と同様な構成を有している。なお、電
気的な接続は図２に示した通りである。FIG. 5 is a diagram of FIG. 2 constructed using the present invention.
FIG. 2 is a diagram schematically illustrating an example of the structure of a superconducting element corresponding to FIG. 2. In a superconducting layer constituting a second injection electrode 15 from the bottom, two terminal extraction portions 15a and 15b are provided, and terminals are respectively provided. FIG. 3 except that the terminals 22 and 23 are connected.
Has the same configuration as the superconducting element shown in FIG. The electrical connection is as shown in FIG.
【００１７】上述したような超電導素子は、例えば以下
のようにして作製される。ここでは、図４に示した素子
を例として、絶縁性基板１として SrTiO3 の (100)基
板、超電導体層１２として YBa2 Cu3 O 7-x （以下、 Y
-Ba-Cu-Oと記す）、常伝導体層１３としてPrBa2 Cu3 O
7-y （以下、Pr-Ba-Cu-O層と記す）を用いた場合につい
て、図６を参照して説明する。The above-described superconducting element is manufactured, for example, as follows. Here, taking the device shown in FIG. 4 as an example, a (100) substrate of SrTiO 3 is used as the insulating substrate 1, and YBa 2 Cu 3 O 7-x (hereinafter, Y
-Ba-Cu-O), and the normal conductor layer 13 is PrBa 2 Cu 3 O
A case where 7-y (hereinafter, referred to as a Pr-Ba-Cu-O layer) is used will be described with reference to FIG.
【００１８】まず、 SrTiO3 の (100)基板１１上に、多
元スパッタリング法を用いて、Y-Ba-Cu-O 層１２ａとPr
-Ba-Cu-O層１３ａの 2層膜を形成する（図６−ａ）。次
いで、イオンミリング加工を用いて下部電極（１４）部
分を形成し、 SrTiO3 を絶縁膜１６として用いた平坦化
プロセスにより平坦化する。続いて、 Y-Ba-Cu-O層１２
ｂを形成し、加工して電流注入電極（１５）部分を形成
する（図６−ｂ）。さらに、Pr-Ba-Cu-O層（１３ｂ〜１
３ｅ）/Y-Ba-Cu-O層（１２ｃ〜１２ｅ）の多層膜を形成
し、素子形状に加工する（図６−ｃ）。この後、再度、
層間絶縁膜１８として SrTiO3 を用いて平坦化し、上部
電極（１７）となる Y-Ba-Cu-O層１２ｆを形成し、素子
形状に加工する（図６−ｄ）。このようにして、本発明
の超電導素子が得られる。[0018] First, on a (100) substrate 11 of SrTiO 3, using the multi-source sputtering method, Y-Ba-Cu-O layer 12a and Pr
A two-layer film of a -Ba-Cu-O layer 13a is formed (FIG. 6A). Next, the lower electrode (14) is formed by ion milling, and is flattened by a flattening process using SrTiO 3 as the insulating film 16. Then, the Y-Ba-Cu-O layer 12
b is formed and processed to form a current injection electrode (15) (FIG. 6B). Further, a Pr-Ba-Cu-O layer (13b-1)
3e) A multilayer film of / Y-Ba-Cu-O layers (12c to 12e) is formed and processed into an element shape (FIG. 6C). After this, again
The interlayer insulating film 18 is planarized by using SrTiO 3 to form a Y-Ba-Cu-O layer 12f serving as an upper electrode (17) and processed into an element shape (FIG. 6D). Thus, the superconducting element of the present invention is obtained.
【００１９】図４に構成を示した超電導素子に、電流を
印加した場合の電流−電圧特性の一測定結果を図７に示
す。図７（ａ）は、上部電極１７−下部電極１４間に流
す電流ｉdcを変化させた際の注入電極１５−下部電極１
４間の電流−電圧特性を、図７（ｂ）は注入電流ｉinj
をパラメータとした上部電極１７−下部電極１４間の電
流−電圧特性を示している。これらから、注入電流ｉ
inj により上部電極１７−下部電極１４間の電流−電圧
特性が変調されており、図７（ｂ）に示す特性図の微分
抵抗から 0.1Ω以下から 0.7Ω程度までインピーダンス
を上げられることが分かる。FIG. 7 shows a measurement result of current-voltage characteristics when a current is applied to the superconducting element shown in FIG. FIG. 7A shows the injection electrode 15 and the lower electrode 1 when the current idc flowing between the upper electrode 17 and the lower electrode 14 is changed.
4 between the current - voltage characteristics, FIG. 7 (b) injecting current i inj
4 shows current-voltage characteristics between the upper electrode 17 and the lower electrode 14 with the parameters as parameters. From these, the injection current i
The current-voltage characteristics between the upper electrode 17 and the lower electrode 14 are modulated by inj, and it can be seen that the impedance can be increased from 0.1Ω or less to about 0.7Ω from the differential resistance in the characteristic diagram shown in FIG.
【００２０】また、図５に構成を示した超電導素子に、
注入電流を印加した場合の上部電極１７−下部電極１４
間の電流−電圧特性の一測定結果を図８に示す。図８か
らは、この場合は入力インピーダンスは 0であるから、
0Ωから 0.7Ω程度までインピーダンスを上げることが
でき、電流−電圧変換ができることが分かる。Further, the superconducting element shown in FIG.
Upper electrode 17-lower electrode 14 when injection current is applied
FIG. 8 shows one measurement result of the current-voltage characteristics between the two. From FIG. 8, since the input impedance is 0 in this case,
It can be seen that the impedance can be increased from 0Ω to about 0.7Ω and current-voltage conversion can be performed.
【００２１】上記した実施例においては、接続層として
常伝導体層を用いた例について説明したが、接続層は近
接する超電導体層間を弱い超電導性で接続することがで
きるものであれば種々のものが利用でき、常伝導体の他
に、例えば絶縁体、粒界、超電導性の弱い超電導体等を
用いることができる。また、これらは並列、直列、また
はネットワーク状等、種々の形態で導入して素子を形成
することができる。In the above embodiment, an example in which a normal conductor layer is used as a connection layer has been described. However, various connection layers may be used as long as they can connect adjacent superconductor layers with weak superconductivity. In addition to a normal conductor, for example, an insulator, a grain boundary, a superconductor having weak superconductivity, or the like can be used. Further, these can be introduced in various forms such as parallel, series, or network to form an element.
【００２２】図９は、段差を有する絶縁性基板３１を利
用して、各超電導体層１２間に粒界接合３２をそれぞれ
介在させた、図１に示す超電導素子の他の構造例を示し
ている。また、図１０は、ブリッジ型素子３３を用いた
接合を利用して構成した例を示している。さらに、図１
１は、ブリッジ型素子３３と常伝導体を用いた接合３４
とを交互に配置した例である。FIG. 9 shows another structural example of the superconducting element shown in FIG. 1 in which a grain boundary junction 32 is interposed between the superconducting layers 12 using an insulating substrate 31 having a step. I have. FIG. 10 shows an example in which the structure using the junction using the bridge element 33 is used. Further, FIG.
1 is a junction 34 using a bridge type element 33 and a normal conductor.
Are alternately arranged.
【００２３】また、上記した実施例においては、説明を
簡略化するのために、超電導性の弱い部分が 5層の場合
について示したが、さらに多くの層を積み重ねることに
よって、より大きなインピーダンスに変えることもでき
る。また、本発明の超電導素子は増幅機能をもつので、
増幅器として使用することもできる。Further, in the above-described embodiment, for the sake of simplicity, the case where the portion having weak superconductivity has five layers is shown. However, by stacking more layers, the impedance is changed to a larger value. You can also. Also, since the superconducting element of the present invention has an amplifying function,
It can also be used as an amplifier.
【００２４】[0024]
【発明の効果】以上説明したように、本発明の超電導素
子によれば、信号レベルとインピーダンスを容易に変換
できるため、超電導集積回路等のインピーダンスの低い
系と半導体に代表されるようなインピーダンスの高い系
との接続が容易にできるようになり、超電導集積回路の
実用化に大きく貢献するものである。As described above, according to the superconducting element of the present invention, since the signal level and the impedance can be easily converted, a system having a low impedance, such as a superconducting integrated circuit, and an impedance such as a semiconductor. The connection with a high system can be easily made, which greatly contributes to the practical use of a superconducting integrated circuit.
【図１】本発明の超電導素子の動作を説明するための図
である。FIG. 1 is a diagram for explaining the operation of a superconducting element of the present invention.
【図２】本発明の超電導素子の他の形態における動作を
説明するための図である。FIG. 2 is a diagram for explaining an operation in another mode of the superconducting element of the present invention.
【図３】本発明の超電導素子の他の素子形態を示す図で
ある。FIG. 3 is a view showing another element form of the superconducting element of the present invention.
【図４】本発明の一実施例による超電導素子の構造を模
式的に示す断面図である。FIG. 4 is a cross-sectional view schematically showing a structure of a superconducting element according to one embodiment of the present invention.
【図５】本発明の他の実施例による超電導素子の構造を
模式的に示す断面図である。FIG. 5 is a cross-sectional view schematically showing a structure of a superconducting element according to another embodiment of the present invention.
【図６】図４に示す超電導素子の作製工程を示す断面図
である。6 is a cross-sectional view showing a step of manufacturing the superconducting element shown in FIG.
【図７】本発明の一実施例による超電導素子の電流−電
圧特性の一測定結果を示す図である。FIG. 7 is a view showing one measurement result of current-voltage characteristics of a superconducting element according to one embodiment of the present invention.
【図８】本発明の他の実施例による超電導素子の電流−
電圧特性の一測定結果を示す図である。FIG. 8 is a graph showing a current of a superconducting device according to another embodiment of the present invention.
FIG. 9 is a diagram showing one measurement result of voltage characteristics.
【図９】本発明の他の実施例による超電導素子の構造を
模式的に示す図である。FIG. 9 is a view schematically showing a structure of a superconducting element according to another embodiment of the present invention.
【図１０】本発明のさらに他の実施例による超電導素子
の構造を模式的に示す図である。FIG. 10 is a diagram schematically showing a structure of a superconducting element according to still another embodiment of the present invention.
【図１１】本発明のさらに他の実施例による超電導素子
の構造を模式的に示す図である。FIG. 11 is a diagram schematically showing a structure of a superconducting element according to still another embodiment of the present invention.
１………超電導性の強い部分 ２………超電導性の弱い部分 ３………注入端子 ４、５…素子端子 １１……絶縁性基板 １２……超電導体層 １３……常伝導体層 １４……下部電極 １５……注入電極 １７……上部電極 １９、２０、２１……端子 DESCRIPTION OF SYMBOLS 1 ... Part with strong superconductivity 2 ... Part with weak superconductivity 3 ... Injection terminal 4, 5 ... Element terminal 11 ... Insulating substrate 12 ... Superconductor layer 13 ... Normal conductor layer 14 ...... Lower electrode 15 ... Injection electrode 17 ... Upper electrode 19, 20, 21 ... Terminal
Claims (1)
に、少なくとも１層の超電導体層を介在させると共に、
これら各超電導体層間に近接する超電導体層間を弱い超
電導性で接続する接続層を挿入した構造を具備し、前記
超電導体層のうち少なくとも１層を注入電極とすると共
に、この注入電極を構成する超電導体層から少なくとも
１つの端子を取り出した超電導素子であって、前記超電
導体層と接続層との積層方向に電流を流した際に、前記
超電導性の弱い接続層の端部で生成された量子化磁束
が、前記超電導性の弱い接続層に沿って運動することに
より発生する電圧を利用して動作するよう構成したこと
を特徴とする超電導素子。At least one superconductor layer is interposed between two superconductor layers constituting an element electrode,
It has a structure in which a connection layer that connects the superconductor layers adjacent to each other between these superconductor layers with weak superconductivity is inserted, and at least one of the superconductor layers is used as an injection electrode and constitutes this injection electrode. A superconducting element obtained by extracting at least one terminal from a superconducting layer,
When a current flows in the stacking direction of the conductor layer and the connection layer,
Quantized magnetic flux generated at the edge of a weakly superconducting connection layer
Move along the connection layer having weak superconductivity.
A superconducting element configured to operate using a voltage generated from the superconducting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4245117A JP2931725B2 (en) | 1992-09-14 | 1992-09-14 | Superconducting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4245117A JP2931725B2 (en) | 1992-09-14 | 1992-09-14 | Superconducting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0697518A JPH0697518A (en) | 1994-04-08 |
| JP2931725B2 true JP2931725B2 (en) | 1999-08-09 |
Family
ID=17128878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4245117A Expired - Lifetime JP2931725B2 (en) | 1992-09-14 | 1992-09-14 | Superconducting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2931725B2 (en) |
-
1992
- 1992-09-14 JP JP4245117A patent/JP2931725B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0697518A (en) | 1994-04-08 |
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