JP2917318B2 - Transistor with current detection function - Google Patents

Transistor with current detection function

Info

Publication number
JP2917318B2
JP2917318B2 JP1268720A JP26872089A JP2917318B2 JP 2917318 B2 JP2917318 B2 JP 2917318B2 JP 1268720 A JP1268720 A JP 1268720A JP 26872089 A JP26872089 A JP 26872089A JP 2917318 B2 JP2917318 B2 JP 2917318B2
Authority
JP
Japan
Prior art keywords
transistor
current
sense
resistor
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1268720A
Other languages
Japanese (ja)
Other versions
JPH03129849A (en
Inventor
昌吾 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Industries Corp
Original Assignee
Toyoda Jidoshokki Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Jidoshokki Seisakusho KK filed Critical Toyoda Jidoshokki Seisakusho KK
Priority to JP1268720A priority Critical patent/JP2917318B2/en
Priority to US07/523,215 priority patent/US5061863A/en
Priority to DE4015625A priority patent/DE4015625C2/en
Priority to KR1019900006971A priority patent/KR930010102B1/en
Priority to CA002016918A priority patent/CA2016918A1/en
Publication of JPH03129849A publication Critical patent/JPH03129849A/en
Priority to KR1019930013751A priority patent/KR930010114B1/en
Application granted granted Critical
Publication of JP2917318B2 publication Critical patent/JP2917318B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Description

【発明の詳細な説明】 〔概要〕 主電流を流すメイントランジスタと該メイントランジ
スタに流れる電流を検出するためのセンストランジスタ
を備えた電流検出機能付トランジスタに関し、 主電流とセンス電流の配分の比が温度変化によって変
化しなくなるようにし、センス電圧が温度の変化に関わ
りなく正しく主電流の大きさに対応し確実に過電流を検
出できる電流検出機能付トランジスタを提供することを
目的とし、 そのために、主電流とセンス電流の比が温度変化に対
し一定となるのに適する温度係数を持った抵抗と該抵抗
に直列に接続される適宜の温度特性を持った抵抗をセン
ストランジスタのエミッタに設けた電流検出機能付トラ
ンジスタを構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a transistor having a current detection function including a main transistor for flowing a main current and a sense transistor for detecting a current flowing to the main transistor, wherein the ratio of the distribution of the main current to the sense current is The purpose of the present invention is to provide a transistor with a current detection function that can be prevented from changing due to a temperature change, and the sense voltage correctly corresponds to the magnitude of the main current irrespective of the temperature change and can reliably detect an overcurrent. A current in which a resistor having a temperature coefficient suitable for maintaining a ratio of a main current to a sense current with respect to a temperature change and a resistor having appropriate temperature characteristics connected in series to the resistor is provided at the emitter of the sense transistor. A transistor with a detection function is configured.

〔産業上の利用分野〕[Industrial applications]

本発明は主電流を流すメイントランジスタと該メイン
トランジスタに流れる電流を検出するためのセンストラ
ンジスタを備えた電流検出機能付トランジスタに関し、
特に温度変化の影響を受けずに安定したセンス電圧が得
られるようにした電流検出機能付トランジスタに係る。The present invention relates to a transistor having a current detection function including a main transistor for flowing a main current and a sense transistor for detecting a current flowing to the main transistor,
In particular, the present invention relates to a transistor with a current detection function capable of obtaining a stable sense voltage without being affected by a temperature change.

〔従来の技術〕[Conventional technology]

大電流を流す必要のある電力用トランジスタでは、過
大電流が流れた際、いちはやく、これを検出し、それに
基づいて前記電力用トランジスタを保護できるよう電力
用トランジスタ自体に電流検出用のセンストランジスタ
を備え電流検出用のエミッタ端子を設けたものが提案さ
れ、実用に供されている。In a power transistor that needs to flow a large current, when an excessive current flows, the power transistor itself is provided with a sense transistor for current detection so that the power transistor itself can be detected as soon as possible and the power transistor can be protected based on the detected current. A device provided with an emitter terminal for current detection has been proposed and put to practical use.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

そうした電流検出機能付トランジスタにあっては、前
記センストランジスタに流れる電流に基づきセンス電圧
としての電圧降下を得るための抵抗（以下センス抵抗と
いう）を必要とする。そして、このセンス抵抗は温度変
化に伴ってその抵抗値が変わってしまうようでは、よし
んば、前記抵抗に流れる電流が一定であっても、検出結
果としてのセンス電圧がまちまちなものとなり、過電流
の基準が正しく定まらないことになる。そうした理由か
ら、前記センス抵抗を温度補償して結果的に温度の変化
に関わらず一定の抵抗値を呈するセンス抵抗を有する電
流検出機能付トランジスタを本発明の発明者は別途提案
している。しかしながら、トランジスタのコレクターエ
ミッタ間順方向抵抗（以下オン抵抗という）はそれ自体
温度変化に伴ってその抵抗値が変化する性質があるた
め、前述の温度係数が零のセンス抵抗を設けると、メイ
ントランジスタとセンストランジスタに流れる電流の
比、即ち、主電流とセンス電流の配分の比が温度変化に
伴って変化してしまいその結果、温度変化に従ってセン
ス電圧が変動してしまうと云った問題があることが分か
った。Such a transistor with a current detection function requires a resistor (hereinafter referred to as a sense resistor) for obtaining a voltage drop as a sense voltage based on a current flowing through the sense transistor. If the resistance value of this sense resistor changes with a temperature change, even if the current flowing through the resistor is constant, the sense voltage as a detection result will vary, and the overcurrent Standards will not be set correctly. For such a reason, the inventor of the present invention has separately proposed a transistor having a current detection function having a sense resistor which exhibits a constant resistance value regardless of a change in temperature by consequently temperature-compensating the sense resistor. However, the forward resistance between the collector and the emitter of the transistor (hereinafter referred to as the on-resistance) itself has the property of changing with the temperature change. And the ratio of the current flowing through the sense transistor to the sense transistor, that is, the ratio of the distribution of the main current to the sense current, changes with temperature. As a result, the sense voltage fluctuates with temperature. I understood.

そこで、本発明は、前述の如き問題点に鑑み、主電流
とセンス電流の配分の比が温度変化によって変化しなく
なるようにし、センス電圧が温度の変化に関わりなく正
しく主電流の大きさに対応し確実に過電流を検出できる
電流検出機能付トランジスタを提供することを目的とす
る。In view of the above problems, the present invention prevents the ratio of the distribution of the main current from the distribution of the sense current from being changed by the temperature change, and the sense voltage correctly corresponds to the magnitude of the main current regardless of the change in the temperature. It is an object of the present invention to provide a transistor with a current detection function capable of reliably detecting an overcurrent.

〔課題を解決するための手段〕[Means for solving the problem]

本発明は前記目的を達成するために、主電流とセンス
電流の比が温度変化に対し一定となるのに適する温度係
数を持った抵抗と該抵抗に直列に接続される適宜の温度
特性を持った抵抗をセンストランジスタのエミッタに設
けて電流検出機能付トランジスタを構成する。In order to achieve the above object, the present invention has a resistor having a temperature coefficient suitable for maintaining a ratio of a main current to a sense current with respect to a temperature change, and an appropriate temperature characteristic connected in series to the resistor. The resistor having the current detection function is provided by providing the resistor at the emitter of the sense transistor.

〔作用〕[Action]

トランジスタのコレクターエミッタ間オン抵抗の温度
特性に対し適宜の温度特性を持った抵抗をセンストラン
ジスタのエミッタに設けてあるので温度変化に伴い、本
来、主電流とセンスの電流との比が変化するところを前
記抵抗の作用により主電流とセンス電流との比を一定に
保持することができるようになる。A resistor with an appropriate temperature characteristic is provided at the emitter of the sense transistor with respect to the temperature characteristic of the on-resistance between the collector and the emitter of the transistor, so the ratio between the main current and the sense current originally changes with temperature. Can maintain a constant ratio between the main current and the sense current by the action of the resistor.

〔実施例〕〔Example〕

以下、本発明の実施例について、図面を参照しながら
詳述する。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

第１図は本発明の電流検出機能付トランジスタの構成
を示す模式図である。FIG. 1 is a schematic diagram showing a configuration of a transistor having a current detection function according to the present invention.

同図において、電流検出機能付トランジスタTrは主電
流を流すメイントランジスタ部と該メイントランジスタ
部に流れる電流を検出するためのセンストランジスタ部
を有している。両トランジスタ部のコレクタとベースは
それぞれ共通に結線し別個に、点線を以て示している容
体の外部に引き出してある（記号Ｃおよび記号Ｂ）。メ
イントランジスタ部のエミッタ、即ち、メインエミッタ
も前記コレクタや前記ベースと同様に前記容体の外部に
引き出している（記号Ｅ）。In FIG. 1, a transistor Tr with a current detection function has a main transistor section for flowing a main current and a sense transistor section for detecting a current flowing in the main transistor section. The collector and the base of both transistor portions are connected in common, and are separately drawn out of the container shown by a dotted line (symbols C and B). The emitter of the main transistor portion, that is, the main emitter is also drawn out of the container like the collector and the base (symbol E).

センストランジスタ部のエミッタ、即ち、センスエミ
ッタは温度係数が零になるよう温度補償してあるセンス
抵抗RSと、動作時、主電流とセンス電流（センストラン
ジスタ部に流れる電流）の比が温度変化に対し一定とな
るのに適する温度係数を持った抵抗RTを介して前記メイ
ンエミッタに接続してある。また、前記センスエミッタ
と前記センス抵抗RSとの接部は前記容体の外部に一方の
センス電圧検出端子（S1）として引き出してあり、更
に、前記センス抵抗RSと前記抵抗RTとの接部は前記容体
の外部に他方のセンス電圧検出端子（S2）として引き出
してある。The emitter of the sense transistor, ie, the sense emitter, has a temperature-compensated sense resistor R S so that the temperature coefficient becomes zero. During operation, the ratio between the main current and the sense current (current flowing through the sense transistor) changes with temperature. Is connected to the main emitter via a resistor RT having a temperature coefficient suitable for being constant with respect to. Further, a contact portion between the sense emitter and the sense resistor R S is led out of the container as one sense voltage detection terminal (S 1 ), and further, a connection between the sense resistor R S and the resistor R T is provided. The contact portion is drawn out of the container as the other sense voltage detection terminal (S 2 ).

なお、本実施例では、前記センス抵抗RSや前記抵抗RT
はシリコン基板上にトランジスタ部と共に形成するアル
ミニウム電極の抵抗（正の温度係数を有する）や拡散法
で形成するポリシリコン（負の温度係数を有する）の拡
散抵抗を組み合わせて形成してある。In the present embodiment, the sense resistor R S and the resistor R T
Are formed by combining the resistance of an aluminum electrode (having a positive temperature coefficient) formed with a transistor portion on a silicon substrate and the diffusion resistance of polysilicon (having a negative temperature coefficient) formed by a diffusion method.

以下、主電流とセンス電流の比が温度変化に関わらず
一定となるための条件につき説明する。Hereinafter, conditions for maintaining the ratio between the main current and the sense current to be constant regardless of the temperature change will be described.

第２図は前記電流検出機能付トランジスタTrの等価回
路を示す構成図である。FIG. 2 is a configuration diagram showing an equivalent circuit of the transistor Tr with a current detection function.

同図において、メイントランジスタ部のコレクターエ
ミッタ間オン抵抗はRCE/mで示してあり、センストラン
ジスタ部のコレクターセンスエミッタ間オン抵抗はRCE/
nで示してある。該コレクターセンスエミッタ間オン抵
抗には前記抵抗RTと前記センス抵抗RSが直列に繋がりメ
インエミッタに接続されている。ここで、センストラン
ジスタ部に流れる電流をISとし、メイントランジスタ部
に流れる電流をIEとすると、電流ISと電流IEの比は、 で表すことができる。ここで、αｋは前記電流検出機能
付トランジスタTrを形成する半導体のオン抵抗RCEの温
度係数、αＴは前記抵抗RTの温度係数、ΔＴは温度の変
化分、ｍとｎは正の整数である。In the figure, the collector-emitter on-resistance of the main transistor section are indicated by R CE / m, collector sense emitter on-resistance of the sense transistor portion R CE /
Indicated by n. The resistor R T and the sense resistor R S are connected in series to the on-resistance between the collector and the sense emitter, and are connected to the main emitter. Here, the current flowing through the sense transistor section and I S, and the current flowing through the main transistor section and I E, the ratio of the current I S and the current I E is Can be represented by Here, α k is a temperature coefficient of the on-resistance R CE of the semiconductor forming the transistor Tr with a current detection function, α T is a temperature coefficient of the resistance R T , ΔT is a temperature change, and m and n are positive. It is an integer.

もし、温度変化の影響を受けないとすれば、前記ΔＴ
は零であるから、前記（１）式にΔＴ＝０を代入する
と、 となる。If not affected by the temperature change, ΔT
Is zero, so by substituting ΔT = 0 into the above equation (1), Becomes

前記（１）式及び前記（２）式より温度変化の影響を
受けずに電流ISと電流IEの比が一定となる条件は、 （３）式から、 となる。From the above equations (1) and (2), the condition that the ratio between the current IS and the current IE is constant without being affected by the temperature change is as follows. From equation (3), Becomes

前記（４）式が電流ISと電流IEの比が一定となるため
の条件となる。従って前記（４）式を満たす温度補償抵
抗RTを前記センスエミッタに付加すれば電流ISと電流IE
の比が一定とり、その結果、センス電圧VSの温度ドリフ
トを解消することができる。Equation (4) is a condition for maintaining a constant ratio between the current IS and the current IE . Therefore, if the temperature compensation resistor RT satisfying the above equation (4) is added to the sense emitter, the current I S and the current I E
, The temperature drift of the sense voltage V S can be eliminated.

第３図は本発明の電流検出機能付トランジスタの他の
実施例を示す構成図である。FIG. 3 is a block diagram showing another embodiment of a transistor with a current detection function according to the present invention.

同図において、電流検出機能付トランジスタＴRのコ
レクタＣ、ベースＢ及びメインエミッタＥは第１図に示
したものと同様に構成してある。センスエミッタは主電
流とセンス電流の比が温度変化に対し一定となるのに適
する温度係数を持った抵抗RTを介して容体の外部にセン
ス電圧検出端子Ｓとして引き出してある。そして、該セ
ンス電圧検出端子ＳとメインエミッタＥとの間に零の温
度係数を有するセンス抵抗RSを外付けできるようにして
いる。このように構成した電流検出機能付トランジスタ
においても第１図に示したものと全く同様に前記センス
抵抗RSの両端より温度ドリフトの殆どないセンス電圧VS
を得ることができる。なお、実施例では通常のトランジ
スタに本発明を適用した場合について説明したが、本発
明はFET、静電誘導トランジスタ（SIT）等にも当然適用
できるものであり、その場合には、コレクタがドレイン
に、エミッタがソースに、ベースがゲートにそれぞれ対
応して呼称されているのは周知のとおりである。In the figure, a collector C, a base B and a main emitter E of a transistor TR having a current detection function are configured in the same manner as that shown in FIG. The sense emitter is drawn out as a sense voltage detection terminal S outside the container via a resistor RT having a temperature coefficient suitable for keeping the ratio of the main current to the sense current constant with respect to a temperature change. A sense resistor RS having a zero temperature coefficient can be externally connected between the sense voltage detection terminal S and the main emitter E. In the transistor having the current detection function thus configured, the sense voltage V S having almost no temperature drift from both ends of the sense resistor R S is exactly the same as that shown in FIG.
Can be obtained. In the embodiment, the case where the present invention is applied to a normal transistor has been described. However, the present invention can naturally be applied to an FET, an electrostatic induction transistor (SIT), and the like. It is well known that the emitter is called the source and the base is called the gate.

〔発明の効果〕〔The invention's effect〕

以上詳細に説明したように、本発明によれば、主電流
とセンス電流の比が温度変化によって殆ど変化しなくな
るようになり、センス電圧が温度の変化に関わりなく正
しく主電流の大きさを反映するようになって確実に過電
流を検出できる。As described above in detail, according to the present invention, the ratio between the main current and the sense current hardly changes due to the temperature change, and the sense voltage correctly reflects the magnitude of the main current regardless of the temperature change. As a result, overcurrent can be reliably detected.

【図面の簡単な説明】[Brief description of the drawings]

第１図は本発明の電流検出機能付トランジスタの構成を
示す模式図、 第２図は電流検出機能付トランジスタの等価回路を示す
構成図、 第３図は本発明の電流検出機能付トランジスタの他の実
施例を示す構成図である。 Tr……トランジスタ、 RT……抵抗、 RS……センス抵抗．FIG. 1 is a schematic diagram showing the configuration of a transistor with a current detection function of the present invention, FIG. 2 is a configuration diagram showing an equivalent circuit of the transistor with a current detection function, and FIG. FIG. 3 is a configuration diagram showing an example of the embodiment. Tr: Transistor, R T: Resistance, R S: Sense resistance.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】主電流とセンス電流の比が温度変化に対し
一定となるのに適する温度係数を持った抵抗と該抵抗に
直列に接続される適宜の温度特性を持った抵抗をセンス
トランジスタのエミッタに設けたことを特徴とする電流
検出機能付トランジスタ。A resistor having a temperature coefficient suitable for maintaining a ratio between a main current and a sense current with respect to a temperature change and a resistor having an appropriate temperature characteristic connected in series to the resistor are connected to the sense transistor. A transistor with a current detection function, which is provided on an emitter.
JP1268720A 1989-05-16 1989-10-16 Transistor with current detection function Expired - Lifetime JP2917318B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1268720A JP2917318B2 (en) 1989-10-16 1989-10-16 Transistor with current detection function
US07/523,215 US5061863A (en) 1989-05-16 1990-05-14 Transistor provided with a current detecting function
DE4015625A DE4015625C2 (en) 1989-05-16 1990-05-15 Transistor with current detection function, the current detection resistor is temperature compensated
KR1019900006971A KR930010102B1 (en) 1989-05-16 1990-05-16 Transistor provided with a current detecting function
CA002016918A CA2016918A1 (en) 1989-05-16 1990-05-16 Transistor provided with a current detecting function
KR1019930013751A KR930010114B1 (en) 1989-10-16 1993-07-21 Transistor provided with current detecting function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1268720A JP2917318B2 (en) 1989-10-16 1989-10-16 Transistor with current detection function

Publications (2)

Publication Number Publication Date
JPH03129849A JPH03129849A (en) 1991-06-03
JP2917318B2 true JP2917318B2 (en) 1999-07-12

Family

ID=17462412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1268720A Expired - Lifetime JP2917318B2 (en) 1989-05-16 1989-10-16 Transistor with current detection function

Country Status (2)

Country Link
JP (1) JP2917318B2 (en)
KR (1) KR930010114B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006302546A (en) * 2005-04-18 2006-11-02 Hitachi High-Technologies Corp Combined resistor body, amplifying circuit using the same, charged particle beam device, and manufacturing method of the combined resistor body
JP5136144B2 (en) * 2008-03-21 2013-02-06 株式会社デンソー Load current supply circuit

Also Published As

Publication number Publication date
JPH03129849A (en) 1991-06-03
KR930010114B1 (en) 1993-10-14

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