JP2909512B2 - Surface emitting semiconductor laser - Google Patents
Surface emitting semiconductor laserInfo
- Publication number
- JP2909512B2 JP2909512B2 JP31682489A JP31682489A JP2909512B2 JP 2909512 B2 JP2909512 B2 JP 2909512B2 JP 31682489 A JP31682489 A JP 31682489A JP 31682489 A JP31682489 A JP 31682489A JP 2909512 B2 JP2909512 B2 JP 2909512B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buried portion
- semiconductor laser
- buried
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は埋込み構造を有する面発光型半導体レーザに
関する。The present invention relates to a surface emitting semiconductor laser having a buried structure.
〔従来の技術〕 第２図は従来の面発光型半導体レーザの縦断面図であ
り、図中31は導電型がｎ型であるGaAs基板を示してい
る。この基板31の表面には、基板31側から順に、ｎ型の
GaAlAsクラッド層32,p型のGaAs活性層33、ｐ型のGaAlAs
クラッド層34,p型のGaAlAsキャップ層35を積層させてな
る被埋込み部が形成されている。被埋込み部の周囲のク
ラッド層32上には、ｐ型のGaAlAsブロック層36,n型のGa
AlAsブロック層46をこの順序で積層させてなり、ｐ−ｎ
逆バイアスによる電流阻止機能を有する埋込み部が形成
されている。[Prior Art] FIG. 2 is a longitudinal sectional view of a conventional surface-emitting type semiconductor laser. In the figure, reference numeral 31 denotes a GaAs substrate having n-type conductivity. On the surface of the substrate 31, in order from the substrate 31 side, an n-type
GaAlAs cladding layer 32, p-type GaAs active layer 33, p-type GaAlAs
A buried portion formed by laminating a clad layer 34 and a p-type GaAlAs cap layer 35 is formed. On the cladding layer 32 around the buried portion, a p-type GaAlAs block layer 36 and an n-type Ga
The AlAs block layers 46 are laminated in this order, and pn
A buried portion having a current blocking function by a reverse bias is formed.
被埋込み部及び埋込み部の表面にわたって、バッファ
層38,半導体多層膜反射鏡39,コンタクト層40が積層形成
されており、コンタクト層40上にはｐ側電極41が形成さ
れている。一方、基板31の他面（第２図の下面）の被埋
込み部を含む部分には基板31を貫通して、レーザビーム
の出射窓となる穴44が開設されている。この穴44の内奥
に露出されたクラッド層32の表面には、誘電体多層膜反
射鏡43が形成されており、残存する基板31の他面にはｎ
側電極42が形成されている。そして、光出力は矢符にて
示す方向に取り出される。A buffer layer 38, a semiconductor multilayer reflector 39, and a contact layer 40 are formed in layers over the buried portion and the surface of the buried portion. A p-side electrode 41 is formed on the contact layer 40. On the other hand, a hole 44 serving as an emission window for a laser beam is formed in a portion of the other surface of the substrate 31 (the lower surface in FIG. 2) including the embedded portion, penetrating the substrate 31. A dielectric multilayer reflector 43 is formed on the surface of the clad layer 32 exposed inside the hole 44, and n is formed on the other surface of the remaining substrate 31.
Side electrodes 42 are formed. The light output is extracted in the direction indicated by the arrow.
次に、このような構成の面発光型半導体レーザの製造
方法（参考文献:Japanese Journal of Applied Physics
Vol.28,No.4,April,1989,pp.L667−L668）について、
説明する。Next, a method for manufacturing a surface emitting semiconductor laser having such a configuration (reference: Japanese Journal of Applied Physics)
Vol.28, No.4, April, 1989, pp.L667-L668)
explain.
まず、基板31上にｎ−クラッド層32,p−活性層33,p−
クラッド層34,p−キャップ層35,GaAlAsマスク層を連続
的に成長させた後、これらの各層を所定形状にエッチン
グして被埋込み部を形成する。次いで、このGaAlAsマス
ク層をマスクとして、選択液相成長法（選択LPE成長
法）により、被埋込み部の周りにｐ−ブロック層36,n−
ブロック層46を成長させて埋込み部を形成する。このマ
スク層をエッチング除去した後、被埋込み部及び埋込み
部上に、バッファ層38,半導体多層膜反射鏡39,コンタク
ト層40を連続成長させる。次にｐ側電極41,n側電極42を
形成し、最後に基板31の一部を除去して穴44を形成し、
ｎ−クラッド層32の露出面に誘電体多層膜反射鏡43を形
成する。First, an n-cladding layer 32, a p-active layer 33, p-
After continuously growing the cladding layer 34, the p-cap layer 35, and the GaAlAs mask layer, these layers are etched into a predetermined shape to form a buried portion. Next, using the GaAlAs mask layer as a mask, the p-block layer 36, n- is formed around the buried portion by a selective liquid phase growth method (selective LPE growth method).
The buried portion is formed by growing the block layer 46. After the mask layer is removed by etching, a buffer layer 38, a semiconductor multilayer mirror 39, and a contact layer 40 are continuously grown on the buried portion and the buried portion. Next, a p-side electrode 41 and an n-side electrode 42 are formed, and finally a part of the substrate 31 is removed to form a hole 44,
A dielectric multilayer mirror 43 is formed on the exposed surface of the n-cladding layer 32.
従来の面発光型半導体レーザにあっては、その製造方
法において、マスク層をエッチング除去する際に埋込み
部の上層を構成するｎ−ブロック層46も併せてエッチン
グ除去されるので、埋込み部の下層を構成するｐ−ブロ
ック層36の一部36aが露出されてしまう。そしてこの露
出部36aにリーク電流が流れて、レーザのしきい値電流
が大きくなるという問題点がある。In the conventional surface-emitting type semiconductor laser, the n-block layer 46 constituting the upper layer of the buried portion is also etched away when the mask layer is removed by etching in the manufacturing method. The part 36a of the p-block layer 36 that constitutes is exposed. Then, there is a problem that a leak current flows through the exposed portion 36a, and the threshold current of the laser increases.
本発明はかかる事情に鑑みてなされたものであり、埋
込み部と半導体多層膜反射鏡との間に、絶縁膜を設ける
ことにより、ブロック層が露出することなく、活性領域
への電流注入を効率良く行え、リーク電流が減少してし
きい値電流を小さくできる面発光型半導体レーザを提供
することを目的とする。The present invention has been made in view of such circumstances, and by providing an insulating film between a buried portion and a semiconductor multilayer film reflector, current injection into an active region can be efficiently performed without exposing a block layer. It is an object of the present invention to provide a surface-emitting type semiconductor laser which can be performed well, can reduce a leakage current and can reduce a threshold current.
本発明に係る面発光型半導体レーザは、第１導電型の
半導体材料よりなるクラッド層上に、埋込み部と、該埋
込み部に埋込まれた活性領域を含む被埋込み部とを有
し、前記埋込み部は前記活性領域を覆う第２導電型の半
導体層が埋込み部上面に露出している面発光型半導体レ
ーザにおいて、前記埋込み部及び被埋込み部上に、前記
被埋込み部上では絶縁膜を介さず、前記埋込み部上のみ
絶縁膜を介して反射鏡となる第２導電型の半導体多層膜
を形成したことを特徴とする。A surface-emitting type semiconductor laser according to the present invention has a buried portion and a buried portion including an active region buried in the buried portion on a cladding layer made of a semiconductor material of a first conductivity type, The buried portion is a surface-emitting type semiconductor laser in which a semiconductor layer of the second conductivity type covering the active region is exposed on an upper surface of the buried portion, wherein an insulating film is formed on the buried portion and the buried portion, A second conductive type semiconductor multilayer film serving as a reflecting mirror is formed only on the buried portion via an insulating film without interposition.
本発明の面発光型半導体レーザにあっては、埋込み部
と反射鏡である半導体多層膜との間に絶縁膜が介在さ
れ、また被埋込み部と半導体多層膜との間には絶縁膜が
介在されておらず、活性領域にのみ電流が注入されると
共に、また活性領域からの光の反射効率が高い。In the surface-emitting type semiconductor laser of the present invention, an insulating film is interposed between the buried portion and the semiconductor multilayer film as a reflector, and an insulating film is interposed between the buried portion and the semiconductor multilayer film. The current is injected only into the active region, and the reflection efficiency of light from the active region is high.
第１図は本発明に係る面発光型半導体レーザの縦断面
図であり、図中１は導電型がｎ型であるGaAs製の基板を
示している。この基板１の表面（第１図で上面）には、
ｎ型のクラッド層２（組成：Ga0.65Al0.35As）,p型の活
性層３（GaAs）,p型のクラッド層４（Ga0.65Al0.35A
s）,p型のキャップ層５（Ga0.94Al0.06As）をこの順序
に積層させたダブルヘテロ構造からなる被埋込み部が形
成されている。被埋込み部の周囲のクラッド層２上に
は、導電型がｐ型のブロック層６（組成：Ga0.45Al0.55
As）からなる埋込み部が形成されている。なお、このブ
ロック層６は、導電型がｎ型でもよく高抵抗層でもよ
い。FIG. 1 is a longitudinal sectional view of a surface emitting semiconductor laser according to the present invention. In FIG. 1, reference numeral 1 denotes a GaAs substrate having an n-type conductivity. On the surface of the substrate 1 (the upper surface in FIG. 1),
n-type cladding layer 2 (composition: Ga 0.65 Al 0.35 As), p-type active layer 3 (GaAs), p-type cladding layer 4 (Ga 0.65 Al 0.35 A)
s), a buried portion having a double hetero structure in which p-type cap layers 5 (Ga 0.94 Al 0.06 As) are laminated in this order is formed. On the cladding layer 2 around the buried portion, a p-type blocking layer 6 (composition: Ga 0.45 Al 0.55
An embedded portion made of As) is formed. The conductivity type of the block layer 6 may be n-type or a high-resistance layer.
埋込み部（ブロック層６）の上面には、SiO2膜からな
る絶縁膜７（膜厚:2000Å）が形成されている。なお、
絶縁膜７は、SiNX,ZnSe等の他の絶縁材料から構成され
ていても良い。On the upper surface of the buried portion (block layer 6), an insulating film 7 (film thickness: 2000 °) made of a SiO 2 film is formed. In addition,
The insulating film 7 may be made of another insulating material such as SiN x and ZnSe.
この絶縁膜７及び被埋込み部（キャップ層５）の上面
には、導電型がｐ型のバッファ層８（（組成：Ga0.9Al
0.1As）,p型の半導体多層膜９（構成：Ga0.9Al0.1As／G
a0.4Al0.6Asを25ペア）,p型のコンタクト層10（GaAs）,
Au/Crからなるｐ側電極11がこの順に積層形成されてい
る。基板１の他面（第１図の下面）の被埋込み部を含む
部分には、レーザビームの出射窓となる穴14が基板１を
貫通して開設されている。この穴14の内奥に露出された
クラッド層２の下面には、誘電体多層膜反射鏡13（構
成：SiO2／TiO2を４ペア）が形成されており、残存する
基板１の他面にはAu/Sn/Crからなるｎ側電極12が形成さ
れている。On the upper surfaces of the insulating film 7 and the buried portion (cap layer 5), a p-type buffer layer 8 ((composition: Ga 0.9 Al
0.1 As), p-type semiconductor multilayer film 9 (constitution: Ga 0.9 Al 0.1 As / G
a 0.4 Al 0.6 As 25 pairs), p-type contact layer 10 (GaAs),
A p-side electrode 11 made of Au / Cr is laminated in this order. In a portion of the other surface of the substrate 1 (the lower surface in FIG. 1) including the buried portion, a hole 14 serving as a laser beam emission window is formed through the substrate 1. On the lower surface of the clad layer 2 exposed inside the hole 14, a dielectric multilayer film reflecting mirror 13 (structure: 4 pairs of SiO 2 / TiO 2 ) is formed, and the other surface of the remaining substrate 1 is formed. Is formed with an n-side electrode 12 made of Au / Sn / Cr.
そして、ｐ側電極11から注入された電流は、キャップ
層5,クラッド層４を通って活性層３へ注入され、光出力
は矢符で示すように基板１側から取り出される。本発明
では、ブロック層６の上面が絶縁膜７にて覆われている
ので、ｐ側電極11から注入された電流は効率良く活性層
３へ注入される。従って、リーク電流は減少するので、
しきい値電流を小さくできる。Then, the current injected from the p-side electrode 11 is injected into the active layer 3 through the cap layer 5 and the cladding layer 4, and the light output is extracted from the substrate 1 as shown by the arrow. In the present invention, since the upper surface of the block layer 6 is covered with the insulating film 7, the current injected from the p-side electrode 11 is efficiently injected into the active layer 3. Therefore, the leakage current decreases,
The threshold current can be reduced.
次にこのような構成をなす面発光型半導体レーザの製
造方法の一例について説明する。Next, an example of a method for manufacturing a surface emitting semiconductor laser having such a configuration will be described.
まず、有機金属気相成長法（OMVPE成長法）によっ
て、基板１上にｎ−クラッド層2,p−活性層3,p−クラッ
ド層4,p−キャップ層5,マスク層（組成：Ga0.55Al0.45A
s）を連続的に成長させた後、これらの各層を所定形状
にエッチングして被埋込み部を形成する。このマスク層
をマスクとして、選択LPE成長法により、被埋込み部の
周りにｐ−ブロック層６を成長させて埋込み部を形成す
る。次いで、硫酸系エッチャントを用いて、マスク層を
エッチング除去した後、電子ビーム蒸着法（EB蒸着法）
により、被埋込み部及び埋込み部上にSiO2膜を被着させ
る。被埋込み部上方のSiO2膜を除去して、絶縁膜７をパ
ターン化した後、OMVPE成長法によって、ｐ−バッファ
層8,p−半導体多層膜反射鏡9,p−コンタクト層10を連続
成長させる。次にｐ側電極11,n側電極12を蒸着形成し、
最後に基板１の一部を除去して穴14を形成し、ｎ−クラ
ッド層２の露出面に誘電体多層膜反射鏡13を形成する。First, an n-clad layer 2, a p-active layer 3, a p-clad layer 4, a p-cap layer 5, and a mask layer (composition: Ga 0.55 ) are formed on a substrate 1 by metal organic chemical vapor deposition (OMVPE growth). Al 0.45 A
After s) is continuously grown, each of these layers is etched into a predetermined shape to form a buried portion. Using this mask layer as a mask, a p-block layer 6 is grown around the buried portion by a selective LPE growth method to form a buried portion. Next, the mask layer is removed by etching using a sulfuric acid-based etchant, and then electron beam evaporation (EB evaporation) is performed.
Thereby, the SiO 2 film is deposited on the buried portion and the buried portion. After removing the SiO 2 film above the buried portion and patterning the insulating film 7, the p-buffer layer 8, the p-semiconductor multilayer mirror 9, and the p-contact layer 10 are continuously grown by OMVPE growth. Let it. Next, a p-side electrode 11 and an n-side electrode 12 are formed by vapor deposition,
Finally, a part of the substrate 1 is removed to form a hole 14, and a dielectric multilayer mirror 13 is formed on the exposed surface of the n-cladding layer 2.
以上のように本発明の面発光型半導体レーザでは、埋
込み部と半導体多層膜反射鏡との間に絶縁膜を設けてい
るので、活性領域への電流注入が効率良く行われる。そ
してリーク電流が減少するので、しきい値電流を小さく
することが可能である。また、被埋込み部である活性領
域との半導体多層膜反射鏡との間には、絶縁膜が形成さ
れていないから、活性領域からの光の反射効率が高いと
いう優れた効果を奏する。As described above, in the surface-emitting type semiconductor laser of the present invention, since the insulating film is provided between the buried portion and the semiconductor multilayer mirror, current injection into the active region is performed efficiently. Since the leak current is reduced, the threshold current can be reduced. Also, since no insulating film is formed between the active region, which is the buried portion, and the semiconductor multilayer mirror, an excellent effect that the reflection efficiency of light from the active region is high is exhibited.
第１図は本発明に係る面発光型半導体レーザの縦断面
図、第２図は従来の面発光型半導体レーザの縦断面図で
ある。 １…基板、２…クラッド層、３…活性層、４…クラッド
層、５…キャップ層、６…ブロック層、７…絶縁膜、９
…半導体多層膜反射鏡FIG. 1 is a longitudinal sectional view of a surface emitting semiconductor laser according to the present invention, and FIG. 2 is a longitudinal sectional view of a conventional surface emitting semiconductor laser. DESCRIPTION OF SYMBOLS 1 ... board | substrate, 2 ... clad layer, 3 ... active layer, 4 ... clad layer, 5 ... cap layer, 6 ... block layer, 7 ... insulating film, 9
... Semiconductor multilayer mirror
フロントページの続き (72)発明者 古沢 浩太郎 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (72)発明者 石川 徹 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (56)参考文献 1989年（平成元年）秋季第50回応物学 会予稿集29ａ−ＺＧ−６ ｐ．908 ＩＥＥＥ Ｊ．Ｑｕａｎｔｕｍ Ｅｌ ｅｃｔｒｏｎ．24［９］（1988） ｐ. 1845−1855 (58)調査した分野(Int.Cl.6，ＤＢ名) H01S 3/18 Continuation of the front page (72) Inventor Kotaro Furusawa 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Toru Ishikawa 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. In-house (56) References 1989 (Heisei Era) 50th Autumn Meeting of the Society of Applied Natural Sciences 29a-ZG-6 p. 908 IEEE J.C. Quantum Electron. 24 [9] (1988) p. 1845-1855 (58) Fields investigated (Int. Cl. 6 , DB name) H01S 3/18
Claims (1)
層上に、埋込み部と、該埋込み部に埋込まれた活性領域
を含む被埋込み部とを有し、前記埋込み部は前記活性領
域を覆う第２導電型の半導体層が埋込み部上面に露出し
ている面発光型半導体レーザにおいて、 前記埋込み部及び被埋込み部上に、前記被埋込み部上で
は絶縁膜を介さず、前記埋込み部上のみ絶縁膜を介して
反射鏡となる第２導電型の半導体多層膜を形成したこと
を特徴とする面発光型半導体レーザ。1. A buried portion and a buried portion including an active region buried in the buried portion on a clad layer made of a semiconductor material of a first conductivity type, wherein the buried portion is the active region. A surface-emitting type semiconductor laser in which a semiconductor layer of a second conductivity type that covers the embedded portion is exposed on the upper surface of the embedded portion, wherein the embedded portion is formed on the embedded portion and the embedded portion without interposing an insulating film on the embedded portion. A surface-emitting type semiconductor laser, wherein a second conductive type semiconductor multilayer film serving as a reflecting mirror is formed only via an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31682489A JP2909512B2 (en) | 1989-12-05 | 1989-12-05 | Surface emitting semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31682489A JP2909512B2 (en) | 1989-12-05 | 1989-12-05 | Surface emitting semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03177087A JPH03177087A (en) | 1991-08-01 |
| JP2909512B2 true JP2909512B2 (en) | 1999-06-23 |
Family
ID=18081328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31682489A Expired - Fee Related JP2909512B2 (en) | 1989-12-05 | 1989-12-05 | Surface emitting semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2909512B2 (en) |
-
1989
- 1989-12-05 JP JP31682489A patent/JP2909512B2/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| １９８９年（平成元年）秋季第５０回応物学会予稿集２９ａ−ＺＧ−６ ｐ．９０８ |
| ＩＥＥＥ Ｊ．Ｑｕａｎｔｕｍ Ｅｌｅｃｔｒｏｎ．２４［９］（１９８８） ｐ．１８４５−１８５５ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03177087A (en) | 1991-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2001251016A (en) | Surface emitting semiconductor laser and its manufacturing method | |
| JP3271291B2 (en) | Surface emitting semiconductor laser | |
| JP2618610B2 (en) | Vertical cavity surface emitting semiconductor laser | |
| JP3718952B2 (en) | Semiconductor laser | |
| JPH0828548B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JP2909512B2 (en) | Surface emitting semiconductor laser | |
| JPH10284800A (en) | Semiconductor light-emitting element and manufacture therefor | |
| JP3344096B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JP3123846B2 (en) | Surface emitting semiconductor laser device | |
| JP3358197B2 (en) | Semiconductor laser | |
| JP2812024B2 (en) | Manufacturing method of surface emitting element | |
| JPH1027941A (en) | Normal radiation semiconductor laser device and method of fabricating the same | |
| JP2001094210A (en) | Semiconductor laser and its manufacturing method | |
| JPH09246652A (en) | Semiconductor laser and manufacturing method thereof | |
| US20230187897A1 (en) | Semiconductor laser element and method of producing semiconductor laser element | |
| JP2566955B2 (en) | Semiconductor laser and manufacturing method thereof | |
| JP2952299B2 (en) | Surface emitting laser device | |
| JPH08125281A (en) | Semiconductor laser | |
| JP2921385B2 (en) | Surface emitting laser, method for manufacturing the same, and method for manufacturing edge emitting laser | |
| JP3546630B2 (en) | Surface emitting semiconductor laser device and method of manufacturing the same | |
| JP2685499B2 (en) | Semiconductor laser device | |
| JP2975745B2 (en) | Surface emitting semiconductor laser device and method of manufacturing the same | |
| JP2985354B2 (en) | Semiconductor laser device | |
| JP3468236B2 (en) | Semiconductor laser | |
| JP2973215B2 (en) | Semiconductor laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |