JP2891784B2 - Organic electroluminescence device - Google Patents

Organic electroluminescence device

Info

Publication number
JP2891784B2
JP2891784B2 JP3015479A JP1547991A JP2891784B2 JP 2891784 B2 JP2891784 B2 JP 2891784B2 JP 3015479 A JP3015479 A JP 3015479A JP 1547991 A JP1547991 A JP 1547991A JP 2891784 B2 JP2891784 B2 JP 2891784B2
Authority
JP
Japan
Prior art keywords
organic
emitting layer
embedded image
prepared
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3015479A
Other languages
Japanese (ja)
Other versions
JPH0517764A (en
Inventor
竜史 村山
健夫 脇本
仁 仲田
義一 佐藤
正治 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PAIONIA KK
Nippon Kayaku Co Ltd
Original Assignee
PAIONIA KK
Nippon Kayaku Co Ltd
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Filing date
Publication date
Application filed by PAIONIA KK, Nippon Kayaku Co Ltd filed Critical PAIONIA KK
Priority to JP3015479A priority Critical patent/JP2891784B2/en
Publication of JPH0517764A publication Critical patent/JPH0517764A/en
Application granted granted Critical
Publication of JP2891784B2 publication Critical patent/JP2891784B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【技術分野】本発明は電界発光素子に関し、特に有機化
合物を発光体として構成される有機エレクトロルミネッ
センス素子(以下、有機EL素子という)に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device, and more particularly, to an organic electroluminescent device (hereinafter, referred to as an organic EL device) constituted by using an organic compound as a light emitting body.

【0002】[0002]

【背景技術】この種の有機EL素子として、図1に示す
ように、陰極である金属電極1と陽極である透明電極2
との間に有機化合物からなり互いに積層された有機蛍光
体薄膜3及び有機正孔輸送層4が配された二層構造のも
のや、図2に示すように、金属電極1と透明電極2との
間に互いに積層された有機電子輸送層5、有機蛍光体薄
膜3及び有機正孔輸送層4が配された三層構造のものが
知られている。ここで、有機正孔輸送層4は陽極から正
孔を注入させ易くする機能と電子をブロックする機能と
を有し、有機電子輸送層5は陰極から電子を注入させ易
くする機能を有している。
BACKGROUND ART As shown in FIG. 1, a metal electrode 1 as a cathode and a transparent electrode 2 as an anode are shown in FIG.
And a two-layer structure in which an organic phosphor thin film 3 and an organic hole transport layer 4 which are made of an organic compound and are laminated on each other, or a metal electrode 1 and a transparent electrode 2 as shown in FIG. There is known a three-layer structure in which an organic electron transport layer 5, an organic phosphor thin film 3, and an organic hole transport layer 4 are laminated with each other. Here, the organic hole transport layer 4 has a function of facilitating the injection of holes from the anode and a function of blocking electrons, and the organic electron transport layer 5 has a function of facilitating the injection of electrons from the cathode. I have.

【0003】これら有機EL素子において、透明電極2
の外側にはガラス基板6が配されており、金属電極1か
ら注入された電子と透明電極2から有機蛍光体薄膜3へ
注入された正孔との再結合によって励起子が生じ、この
励起子が放射失活する過程で光を放ち、この光が透明電
極2及びガラス基板6を介して外部に放出されることに
なる。
In these organic EL devices, a transparent electrode 2
A glass substrate 6 is disposed outside the substrate, and excitons are generated by recombination of electrons injected from the metal electrode 1 and holes injected from the transparent electrode 2 into the organic phosphor thin film 3. Emits light in the process of radiation deactivation, and this light is emitted outside through the transparent electrode 2 and the glass substrate 6.

【0004】さらに、蛍光体薄膜を主成分の有機質ホス
ト物質と副成分の蛍光性ゲスト物質とから形成して、安
定な発光ををなす有機EL素子も開発されている。しか
しながら、上述した構成の従来の有機EL素子におい
て、一般に低電圧で発光をなすけれども、更に高輝度で
発光する有機EL素子が望まれている。
Further, an organic EL device which emits stable light by forming a phosphor thin film from an organic host material as a main component and a fluorescent guest material as a sub component has been developed. However, in the conventional organic EL device having the above-described configuration, an organic EL device which emits light at a lower voltage but emits light with higher luminance is desired.

【0005】[0005]

【発明の目的】本発明は、上述した要望を満たすべくな
されたものであって、長期間安定して高輝度にて発光さ
せることができる有機EL素子を提供することを目的と
する。
An object of the present invention is to satisfy the above-mentioned demands, and an object of the present invention is to provide an organic EL device capable of emitting light with high luminance stably for a long period of time.

【0006】[0006]

【発明の構成】本発明による有機エレクトロルミネッセ
ンス素子においては、有機化合物からなり互いに積層さ
れた蛍光体発光層及び正孔輸送層が陰極及び陽極間に配
された有機エレクトロルミネッセンス素子であって、前
記蛍光体発光層は下記化学式1又は2
The organic electroluminescent device according to the present invention is an organic electroluminescent device comprising a phosphor emitting layer and a hole transporting layer comprising an organic compound and laminated on each other, between a cathode and an anode. The phosphor light emitting layer has the following chemical formula 1 or 2

【0007】[0007]

【化1】 Embedded image

【0008】[0008]

【化2】 Embedded image

【0009】(上記化学式1及び2中、L1、L2及びL
3は下記化学式3で示す骨格を表わしかつ、それぞれ同
じであってもよい)
(In the above chemical formulas 1 and 2, L 1 , L 2 and L
3 represents a skeleton represented by the following chemical formula 3, and may be the same.)

【0010】[0010]

【化3】 Embedded image

【0011】(上記化学式1、2及び3中、Qは置換基
を有してもよいベンゼン環又はナフタレン環の残基を表
わし、Rはアルキル基、アミノカルボニルアミノ基、ア
ミノチオカルボニルアミノ基、置換基を有してもよいア
ラルキル基又は置換基を有してもよいフェニル基を表わ
し、MはAl,Be,Mg,Ca,Zn,Cd,Cr,
Ni,Bi,In,Tl,Ti,Sn,V,Rh,P
b,Fe,Ag,Cu,Sr,Ba,Sc,Ga,Y又
はCoを表わす)で示される電界発光化合物を含むこと
を特徴とする。
(In the above chemical formulas 1, 2 and 3, Q represents a residue of a benzene ring or a naphthalene ring which may have a substituent, and R represents an alkyl group, an aminocarbonylamino group, an aminothiocarbonylamino group, Represents an aralkyl group which may have a substituent or a phenyl group which may have a substituent, and M is Al, Be, Mg, Ca, Zn, Cd, Cr,
Ni, Bi, In, Tl, Ti, Sn, V, Rh, P
b, Fe, Ag, Cu, Sr, Ba, Sc, Ga, Y or Co).

【0012】以下に本発明を図表を参照しつつ説明す
る。本発明の有機EL素子は、図1に示した構造の有機
EL素子と同様であって、有機化合物の蛍光体発光層3
及び正孔輸送層4を一対の電極1,2間に薄膜として積
層、成膜したものである。さらに、本発明による有機E
L素子においては、蛍光体層3を形成する上記化学式1
又は2で示される電界発光化合物の上記化学式3で示さ
れる骨格は、具体的には下記の化学式4ないし6で示さ
れる配位子である。
The present invention will be described below with reference to the drawings. The organic EL device of the present invention is the same as the organic EL device having the structure shown in FIG.
Further, the hole transport layer 4 is laminated and formed as a thin film between the pair of electrodes 1 and 2. Furthermore, the organic E according to the invention
In the L element, the above-mentioned chemical formula 1 for forming the phosphor layer 3 is used.
The skeleton represented by the above chemical formula 3 of the electroluminescent compound represented by 2 or 2 is specifically a ligand represented by the following chemical formulas 4 to 6.

【0013】[0013]

【化4】 Embedded image

【0014】[0014]

【化5】 Embedded image

【0015】[0015]

【化6】 Embedded image

【0016】この蛍光体薄膜3を形成する上記化学式1
又は2及び上記化学式4ないし6で表わされる電界発光
化合物は、表1に示す配位子L1〜L3及び中心原子Mの
組み合わせを有する発光体No.EL1〜No.EL40が好ま
しい。表1に示す配位子L1〜L3のl1〜l26は、表2
及び表3に示す上記化学式4〜6の構造及び官能基R1
〜R6の組み合わせを有する。なお、表中、符号−は配
位子又は官能基が存在しないことを示す。
The above chemical formula 1 for forming the phosphor thin film 3
Or 2 and the electroluminescent compounds represented by the chemical formulas 4 to 6 are preferably luminescent materials No. EL1 to No. EL40 having a combination of ligands L 1 to L 3 and a central atom M shown in Table 1. L 1 to l 26 ligand L 1 ~L 3 shown in Table 1, Table 2
And the structures of the above Chemical Formulas 4 to 6 and the functional groups R 1 shown in Table 3.
To R 6 . In the tables, the symbol-indicates that there is no ligand or functional group.

【0017】[0017]

【表1】 [Table 1]

【0018】[0018]

【表2】 [Table 2]

【0019】[0019]

【表3】 [Table 3]

【0020】陰極1には、仕事関数が小さな金属、例え
ば厚さが約100〜5000Å程度のアルミニウム、マグネシ
ウム、インジウム、銀又は各々の合金が用い得る。ま
た、陽極2には、仕事関数の大きな導電性材料、例えば
厚さが1000〜3000Å程度のインジウムすず酸化物(IT
O)又は厚さが 800〜1500Å程度の金が用い得る。な
お、金を電極材料として用いた場合には、電極は半透明
の状態となる。
For the cathode 1, a metal having a small work function, for example, aluminum, magnesium, indium, silver or an alloy of each having a thickness of about 100 to 5000 ° can be used. The anode 2 is made of a conductive material having a large work function, for example, indium tin oxide (IT) having a thickness of about 1000 to 3000 °.
O) or gold with a thickness of about 800-1500 ° can be used. When gold is used as an electrode material, the electrode is in a translucent state.

【0021】また、有機正孔輸送層4には、更に下記化
学式7ないし18のCTM(Carrier Transporting Mat
erials )として知られる化合物を単独、もしくは混合
物として用い得る。
The organic hole transport layer 4 further has a CTM (Carrier Transporting Mat) represented by the following chemical formulas 7 to 18.
The compounds known as erials) can be used alone or as a mixture.

【0022】[0022]

【化7】 Embedded image

【0023】[0023]

【化8】 Embedded image

【0024】[0024]

【化9】 Embedded image

【0025】[0025]

【化10】 Embedded image

【0026】[0026]

【化11】 Embedded image

【0027】[0027]

【化12】 Embedded image

【0028】[0028]

【化13】 Embedded image

【0029】[0029]

【化14】 Embedded image

【0030】[0030]

【化15】 Embedded image

【0031】[0031]

【化16】 Embedded image

【0032】[0032]

【化17】 Embedded image

【0033】[0033]

【化18】 Embedded image

【0034】また、図1においては陰極1及び陽極2間
に有機蛍光体薄膜3及び有機正孔輸送層4を配した二層
構造としたが、図2の如く陰極1及び蛍光体薄膜3間
に、例えばオキサジアゾール誘導体等からなる有機電子
輸送層5を配した三層構造の有機EL素子としても同様
の効果を奏する。さらに、図2の如き三層構造として、
蛍光体薄膜をいわゆるホスト及びゲスト物質の混合物と
して形成し、例えば主成分の有機質ホスト物質としてテ
トラフェニルブタジエン誘導体を用い、上記化学式4な
いし6で示される化合物を副成分の蛍光性ゲスト物質と
して形成してもよく同様の効果を奏する。
In FIG. 1, the organic phosphor thin film 3 and the organic hole transport layer 4 are arranged between the cathode 1 and the anode 2 to form a two-layer structure. In addition, the same effect can be obtained as an organic EL element having a three-layer structure in which an organic electron transport layer 5 made of, for example, an oxadiazole derivative is disposed. Further, as a three-layer structure as shown in FIG.
The phosphor thin film is formed as a so-called mixture of a host and a guest substance. For example, a compound represented by the above formulas 4 to 6 is formed as a fluorescent guest substance as an auxiliary component using a tetraphenylbutadiene derivative as an organic host substance as a main component. The same effect may be obtained.

【0035】[0035]

【発明の効果】以上説明したように、本発明による有機
EL素子においては、有機化合物からなり互いに積層さ
れた蛍光体発光層及び正孔輸送層が陰極及び陽極間に配
された構成の有機EL素子であって、蛍光体発光層が上
記化学式1又は2で示される電界発光化合物を含む蛍光
体薄膜からなるので、低電圧にて効率良く高輝度で発光
させることができる。
As described above, in the organic EL device according to the present invention, the organic EL device having the constitution in which the phosphor emitting layer and the hole transport layer made of the organic compound are laminated between the cathode and the anode. In the device, since the phosphor light emitting layer is made of a phosphor thin film containing the electroluminescent compound represented by the above chemical formula 1 or 2, light can be efficiently emitted with high luminance at a low voltage.

【0036】[0036]

【実施例】【Example】

[実施例(1)] ITOガラス上に正孔輸送層としてN,N´−ジフェニ
ル−N,N´−ビス(3メチルフェニル)−1,1´−
ビフェニル−4,4´−ジアミンを1.5×10 ̄5To
rrの真空下で加熱し、500Åの厚さに蒸着した。次に下
記化学式19で示される化合物を発光層として2.0×
10 ̄5Torrの真空下で加熱し、 500Åの厚さに蒸着し
た。次にメタルマスクを介して陰極としてマグネシウム
とアルミニウムとを各々蒸着速度10Å/secと1Å
/secとで1.3×10 ̄5Torrの真空下で1000Åの
厚さに蒸着し、素子を作成した。
[Example (1)] N, N'-diphenyl-N, N'-bis (3-methylphenyl) -1,1'- as a hole transport layer on ITO glass
Biphenyl-4,4'-diamine is 1.5 × 10 5 To
Heated under vacuum of rr and deposited to a thickness of 500 mm. Next, a compound represented by the following chemical formula 19 was used as a light emitting layer at 2.0 ×
Was heated under vacuum at 10¯ 5 Torr, it was deposited to a thickness of 500 Å. Next, magnesium and aluminum were deposited as a cathode through a metal mask at a deposition rate of 10 ° / sec and 1 °, respectively.
/ Sec under a vacuum of 1.3 × 10 5 Torr to form a device with a thickness of 1000 °.

【0037】この様にして作成した素子にITO電極を
陽極として20Vの直流電圧を印加したところ125mA/cm
2の電流密度で210cd/m2の輝度を得た。この素子の発光
スペクトルは450nmにピークをもち、青色の発光を得
た。
When a DC voltage of 20 V was applied to the device thus fabricated using the ITO electrode as an anode, 125 mA / cm
To obtain a luminance of 210 cd / m 2 at a second current density. The emission spectrum of this device had a peak at 450 nm, and emitted blue light.

【0038】[0038]

【化19】 Embedded image

【0039】[実施例(2)] 実施例(1)の発光層を成膜する迄は、同方法で成膜
し、その後電子輸送層として2−(4'−t−ブチルフ
ェニル)−5−(4''−ビフェニル)−1,3,4−オ
キサジアゾールを1.2×10 ̄5Torrの真空下で加熱
し、300Åの厚さに蒸着した。次に、実施例(1)と同
方法で陰極を成膜し、素子を作成した。
[Example (2)] Until the light emitting layer of Example (1) was formed, a film was formed by the same method, and then, as an electron transport layer, 2- (4′-t-butylphenyl) -5 was used. -(4 ″ -biphenyl) -1,3,4-oxadiazole was heated under a vacuum of 1.2 × 10 5 Torr to a thickness of 300 °. Next, a cathode was formed by the same method as in Example (1) to prepare an element.

【0040】この様にして作成した素子にITO電極を
陽極として23Vの直流電圧を印加したところ、75mA/
cm2の電流密度で185cd/m2の輝度を得た。この素子の発
光スペクトルは490nmにピークをもち、青緑色の発光を
得た。 [実施例(3)] 正孔輸送層迄は、実施例(1)と同方法で成膜し、その
後、下記化学式20で示されるテトラフェニルブタジエ
ン誘導体と、実施例(1)の発光層に用いた化合物とを
各々蒸着速度10Å/secと0.1Å/secとで1.
0×10 ̄5Torrの真空下で400Åの厚さに蒸着し、発
光層とし、次に実施例(2)と同方法で電子輸送層を20
0Å成膜した後に陰極を成膜し、素子を作成した。
When a DC voltage of 23 V was applied to the device thus prepared using the ITO electrode as an anode, 75 mA /
A luminance of 185 cd / m 2 was obtained at a current density of cm 2 . The emission spectrum of this device had a peak at 490 nm and emitted blue-green light. [Example (3)] Up to the hole transport layer, a film was formed by the same method as in Example (1), and then a tetraphenylbutadiene derivative represented by the following chemical formula 20 was added to the light emitting layer of Example (1). The used compounds were used at a deposition rate of 10 ° / sec and 0.1 ° / sec, respectively.
Vacuum is deposited to a thickness of 400 ° under a vacuum of 0 × 10 5 Torr to form a light emitting layer, and then an electron transport layer is formed in the same manner as in Example (2).
After forming the film at 0 °, a cathode was formed to form a device.

【0041】[0041]

【化20】 Embedded image

【0042】この様にして作成した素子にITO電極を
陽極として18.5Vの直流電圧を印加したところ5mA/
cm2の電流密度で1cd/m2の輝度の青色の発光を得た。 [実施例(4)] 発光層に、下記化学式21で示される化合物を用いた以
外は実施例(1)と同方法で素子を作成した。
When a DC voltage of 18.5 V was applied to the device thus prepared using the ITO electrode as an anode, a current of 5 mA /
Blue light emission having a luminance of 1 cd / m 2 was obtained at a current density of cm 2 . Example (4) A device was prepared in the same manner as in Example (1) except that a compound represented by the following chemical formula 21 was used for the light emitting layer.

【0043】この様にして作成した素子にITO電極を
陽極として25.2Vの直流電圧を印加したところ217.5mA/
cm2の電流密度で195cd/m2の輝度を得た。この素子の発
光スペクトルは465nmにピークをもち、青色の発光を得
た。
When a DC voltage of 25.2 V was applied to the device fabricated in this manner using the ITO electrode as an anode,
A luminance of 195 cd / m 2 was obtained at a current density of cm 2 . The emission spectrum of this device had a peak at 465 nm, and emitted blue light.

【0044】[0044]

【化21】 Embedded image

【0045】[実施例(5)] 発光層に実施例(4)の発光層に用いた化合物を用いた
以外は、実施例(2)と同方法で素子を作成した。この
様にして作成した素子にITOを陽極として29.4Vの直
流電圧を印加したところ270mA/cm2の電流密度で476cd/m
2の輝度を得た。この素子の発光スペクトルは465nmにピ
ークをもち、青色の発光を得た。
Example (5) A device was prepared in the same manner as in Example (2), except that the compound used for the light emitting layer of Example (4) was used for the light emitting layer. When a DC voltage of 29.4 V was applied to the device thus prepared using ITO as an anode, a current density of 270 mA / cm 2 was 476 cd / m 2.
A luminance of 2 was obtained. The emission spectrum of this device had a peak at 465 nm, and emitted blue light.

【0046】[実施例(6)] 実施例(3)において、発光層に用いた実施例(1)の
発光物質を実施例(4)の発光物質に替えた以外は実施
例(3)と同方法で素子を作成した。この様にして作成
した素子に、ITO電極を陽極として27.1Vの直流電圧
を印加したところ275mA/cm2の電流密度で563cd/m2の輝
度を得た。この素子の発光スペクトルは、455nmにピー
クをもち、青色の発光を得た。
Example (6) Example (3) was the same as Example (3) except that the luminescent material of Example (1) used in the luminescent layer was changed to the luminescent material of Example (4). A device was prepared in the same manner. When a DC voltage of 27.1 V was applied to the device thus prepared using the ITO electrode as an anode, a luminance of 563 cd / m 2 was obtained at a current density of 275 mA / cm 2 . The emission spectrum of this device had a peak at 455 nm and emitted blue light.

【0047】[実施例(7)] 発光層に、下記化学式22で示される化合物を用いた以
外は実施例(1)と同方法で素子を作成した。この様に
して作成した素子にITO電極を陽極として23.7Vの直
流電圧を印加したところ75mA/cm2の電流密度で49cd/m2
の輝度の青色の発光を得た。
Example (7) A device was prepared in the same manner as in Example (1) except that a compound represented by the following chemical formula 22 was used for the light emitting layer. When a DC voltage of 23.7 V was applied to the device thus prepared using the ITO electrode as an anode, a current density of 75 mA / cm 2 and 49 cd / m 2 were obtained.
Blue light having a luminance of.

【0048】[0048]

【化22】 Embedded image

【0049】[実施例(8)] 発光層に実施例(7)の発光層に用いた化合物を用いた
以外は、実施例(2)と同方法で素子を作成した。この
様にして作成した素子にITO電極を陰極として29.5V
の直流電圧を印加したところ37.5mA/cm2の電流密度で38
cd/m2の輝度の青色の発光を得た。
Example (8) A device was prepared in the same manner as in Example (2), except that the compound used for the light emitting layer of Example (7) was used for the light emitting layer. 29.5 V using the ITO electrode as a cathode
When a DC voltage of 37.5 mA / cm 2 was applied, 38
Blue light with a luminance of cd / m 2 was obtained.

【0050】[実施例(9)] 実施例(3)において、発光層に用いた実施例(1)の
発光物質を実施例(7)の発光物質に替えた以外は実施
例(3)と同方法で素子を作成した。この様にして作成
した素子に、ITO電極を陽極として28.9Vの直流電圧
を印加したところ、475mA/cm2の電流密度で776cd/m2
輝度を得た。この素子の発光スペクトルは445nmにピー
クをもち、青色の発光を得た。
Example (9) Example (3) was the same as Example (3) except that the luminescent material of Example (1) used in the light emitting layer was changed to the luminescent material of Example (7). A device was prepared in the same manner. When a DC voltage of 28.9 V was applied to the device thus prepared using the ITO electrode as an anode, a luminance of 776 cd / m 2 was obtained at a current density of 475 mA / cm 2 . The emission spectrum of this device had a peak at 445 nm, and emitted blue light.

【0051】[実施例(10)] 発光層に、下記化学式23で示される化合物を用いた以
外は実施例(1)と同方法で素子を作成した。この様に
して作成した素子にITO電極を陽極として23.5Vの直
流電圧を印加したところ87.5mA/cm2の電流密度で189cd/
m2の輝度の青色の発光を得た。
Example (10) A device was prepared in the same manner as in Example (1) except that a compound represented by the following chemical formula 23 was used for the light emitting layer. When a DC voltage of 23.5 V was applied to the device thus prepared using the ITO electrode as an anode, the current density of 87.5 mA / cm 2 was 189 cd / cm 2.
Blue light emission with m 2 brightness was obtained.

【0052】[0052]

【化23】 Embedded image

【0053】[実施例(11)] 発光層に実施例(10)の発光層に用いた化合物を用いた
以外は、実施例(2)と同方法で素子を作成した。この
様にして作成した素子で青色の発光を得た。 [実施例(12)] 実施例(3)において、発光層に用いた実施例(1)の
発光物質を実施例(10)の発光物質に替えた以外は実施例
(3)と同方法で素子を作成した。
Example (11) A device was prepared in the same manner as in Example (2), except that the compound used in the light emitting layer of Example (10) was used for the light emitting layer. Blue light was emitted from the device thus prepared. Example (12) In Example (3), the same method as in Example (3) was used, except that the luminescent material of Example (1) used in the light emitting layer was changed to the luminescent material of Example (10). A device was created.

【0054】この様にして作成した素子に、ITO電極
を陽極として21.9Vの直流電圧を印加したところ、550m
A/cm2の電流密度で65cd/m2の輝度を得た。この素子の発
光スペクトルは、465nmにピークをもち、青色の発光を
得た。 [実施例(13)] 発光層に、下記化学式24で示される化合物を用いた以
外は実施例(1)と同方法で素子を作成した。
When a DC voltage of 21.9 V was applied to the device thus prepared using the ITO electrode as an anode,
A luminance of 65 cd / m 2 was obtained at a current density of A / cm 2 . The emission spectrum of this device had a peak at 465 nm and emitted blue light. Example (13) A device was prepared in the same manner as in Example (1), except that a compound represented by the following chemical formula 24 was used for the light emitting layer.

【0055】この様にして作成した素子にITO電極を
陽極として18.9Vの直流電圧を印加したところ75mA/cm2
の電流密度で8cd/m2の輝度の青色の発光を得た。
When a DC voltage of 18.9 V was applied to the device thus prepared using the ITO electrode as an anode, a current of 75 mA / cm 2 was obtained.
At a current density of 8 cd / m 2 .

【0056】[0056]

【化24】 Embedded image

【0057】[実施例(14)] 発光層に実施例(13)の発光層に用いた化合物を用い
た以外は、実施例(2)と同方法で素子を作成した。こ
の様にして作成した素子にITO電極を陰極として25.2
Vの直流電圧を印加したところ10mA/cm2の電流密度で14
cd/m2の輝度の青色の発光を得た。
Example (14) A device was prepared in the same manner as in Example (2), except that the compound used for the light emitting layer of Example (13) was used for the light emitting layer. The ITO electrode was used as a cathode for the device fabricated in this way.
When a DC voltage of 10 V was applied, a current density of 10 mA / cm 2
Blue light with a luminance of cd / m 2 was obtained.

【0058】[実施例(15)] 実施例(3)において、発光層に用いた実施例(1)の
発光物質を実施例(13)の発光物質に替えた以外は実
施例(3)と同方法で素子を作成した。この様にして作
成した素子に、ITO電極を陽極として22.9Vの直流電
圧を印加したところ、500mA/cm2の電流密度で432cd/m2
の輝度を得た。この素子の発光スペクトルは465nmにピ
ークをもち、青色の発光を得た。
Example (15) Example (3) was the same as Example (3) except that the luminescent material of Example (1) used in the luminescent layer was replaced with the luminescent material of Example (13). A device was prepared in the same manner. The device produced in this way, where the ITO electrode by applying a DC voltage of 22.9V as the anode, 432cd / m 2 at a current density of 500mA / cm 2
Was obtained. The emission spectrum of this device had a peak at 465 nm, and emitted blue light.

【0059】[実施例(16)] 発光層に、下記化学式25で示される化合物を用いた以
外は実施例(1)と同方法で素子を作成した。この様に
して作成した素子にITO電極を陽極として19.9Vの直
流電圧を印加したところ125mA/cm2の電流密度で145cd/m
2の輝度の青色の発光を得た。
Example (16) A device was prepared in the same manner as in Example (1) except that a compound represented by the following chemical formula 25 was used for the light emitting layer. When a DC voltage of 19.9 V was applied to the device thus prepared using the ITO electrode as an anode, the current density of 125 mA / cm 2 was 145 cd / m 2.
A blue light with a luminance of 2 was obtained.

【0060】[0060]

【化25】 Embedded image

【0061】[実施例(17)] 発光層に実施例(16)の発光層に用いた化合物を用い
た以外は、実施例(2)と同方法で素子を作成した。こ
の様にして作成した素子にITO電極を陰極として22.8
Vの直流電圧を印加したところ85mA/cm2の電流密度で90
4cd/m2の輝度を得た。この素子の発光スペクトルは500n
mにピークをもち、青緑色の発光を得た。
Example (17) An element was prepared in the same manner as in Example (2), except that the compound used in the light emitting layer of Example (16) was used for the light emitting layer. The ITO electrode was used as a cathode for the element fabricated in
At a current density of 85mA / cm 2 was applied a DC voltage of V 90
A luminance of 4 cd / m 2 was obtained. The emission spectrum of this device is 500n
It has a peak at m and emits blue-green light.

【0062】[実施例(18)] 実施例(3)において、発光層に用いた実施例(1)の
発光物質を実施例(16)の発光物質に替えた以外は実
施例(3)と同方法で素子を作成した。この様にして作
成した素子に、ITO電極を陽極として18.6Vの直流電
圧を印加したところ、250mA/cm2の電流密度で258cd/m2
の輝度を得た。この素子の発光スペクトルは465nmにピ
ークをもち、青色の発光を得た。
Example (18) Example (3) was the same as Example (3) except that the luminescent material of Example (1) used in the luminescent layer was changed to the luminescent material of Example (16). A device was prepared in the same manner. When a DC voltage of 18.6 V was applied to the device thus prepared using the ITO electrode as an anode, the current density of 250 mA / cm 2 was 258 cd / m 2.
Was obtained. The emission spectrum of this device had a peak at 465 nm, and emitted blue light.

【図面の簡単な説明】[Brief description of the drawings]

【図1】二層構造の有機EL素子を示す構造図である。FIG. 1 is a structural diagram showing an organic EL device having a two-layer structure.

【図2】三層構造の有機EL素子を示す構造図である。FIG. 2 is a structural diagram showing an organic EL element having a three-layer structure.

【符号の説明】[Explanation of symbols]

1……金属電極(陰極) 2……透明電極(陽極) 3……有機蛍光体薄膜 4……有機正孔輸送層 5……有機電子輸送層 6……ガラス基板 DESCRIPTION OF SYMBOLS 1 ... Metal electrode (cathode) 2 ... Transparent electrode (anode) 3 ... Organic phosphor thin film 4 ... Organic hole transport layer 5 ... Organic electron transport layer 6 ... Glass substrate

───────────────────────────────────────────────────── フロントページの続き (72)発明者 仲田 仁 埼玉県入間郡鶴ヶ島町富士見6丁目1番 1号パイオニア株式会社 総合研究所内 (72)発明者 佐藤 義一 東京都北区志茂3丁目26番8号 (72)発明者 野村 正治 東京都北区志茂3丁目26番8号 (58)調査した分野(Int.Cl.6,DB名) C09K 11/06 CA(STN) REGISTRY(STN) WPI(DIALOG)──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hitoshi Nakata 6-1, 1-1 Fujimi, Tsurugashima-cho, Iruma-gun, Saitama Prefecture Pioneer Corporation (72) Inventor Yoshikazu Sato 3-26-8 Shimo, Kita-ku, Tokyo No. (72) Inventor Masaharu Nomura 3-26-8 Shimo, Kita-ku, Tokyo (58) Field surveyed (Int. Cl. 6 , DB name) C09K 11/06 CA (STN) REGISTRY (STN) WPI (DIALOG) )

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 有機化合物からなり互いに積層された蛍
光体発光層及び正孔輸送層が陰極及び陽極間に配された
有機エレクトロルミネッセンス素子であって、前記蛍光
体発光層は下記化学式1又は2 【化1】 【化2】 (上記化学式1及び2中、L1、L2及びL3は下記化学
式3で示す骨格を表わしかつ、それぞれ同じであっても
よい) 【化3】 (上記化学式1、2及び3中、Qは置換基を有してもよ
いベンゼン環又はナフタレン環の残基を表わし、Rはア
ルキル基、アミノカルボニルアミノ基、アミノチオカル
ボニルアミノ基、置換基を有してもよいアラルキル基又
は置換基を有してもよいフェニル基を表わし、MはA
l,Be,Mg,Ca,Zn,Cd,Cr,Ni,B
i,In,Tl,Ti,Sn,V,Rh,Pb,Fe,
Ag,Cu,Sr,Ba,Sc,Ga,Y又はCoを表
わす)で示される電界発光化合物を含むことを特徴とす
る有機エレクトロルミネッセンス素子。
An organic electroluminescent device comprising a phosphor light-emitting layer and a hole transport layer, which are made of an organic compound and are stacked on each other, are disposed between a cathode and an anode, wherein the phosphor light-emitting layer is represented by the following chemical formula 1 or 2 Embedded image Embedded image (In the above chemical formulas 1 and 2, L 1 , L 2 and L 3 each represent a skeleton represented by the following chemical formula 3 and may be the same.) (In the chemical formulas 1, 2 and 3, Q represents a benzene ring or naphthalene ring residue which may have a substituent, and R represents an alkyl group, an aminocarbonylamino group, an aminothiocarbonylamino group, or a substituent. Represents an aralkyl group which may be substituted or a phenyl group which may be substituted;
1, Be, Mg, Ca, Zn, Cd, Cr, Ni, B
i, In, Tl, Ti, Sn, V, Rh, Pb, Fe,
Ag, Cu, Sr, Ba, Sc, Ga, Y or Co).
【請求項2】 前記陰極及び前記蛍光体層間に有機電子
輸送層が配されたことを特徴とする請求項1記載の有機
エレクトロルミネッセンス素子。
2. The organic electroluminescence device according to claim 1, wherein an organic electron transport layer is disposed between the cathode and the phosphor layer.
【請求項3】 前記蛍光体発光層は前記電界発光化合物
と異なる第2電界発光化合物を含み、前記第2電界発光
化合物の含有割合は前記電界発光化合物の含有割合より
も大であることを特徴とする請求項2記載の有機エレク
トロルミネッセンス素子。
3. The phosphor light-emitting layer includes a second electroluminescent compound different from the electroluminescent compound, and a content ratio of the second electroluminescent compound is larger than a content ratio of the electroluminescent compound. The organic electroluminescence device according to claim 2, wherein
JP3015479A 1991-02-06 1991-02-06 Organic electroluminescence device Expired - Fee Related JP2891784B2 (en)

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JP3015479A JP2891784B2 (en) 1991-02-06 1991-02-06 Organic electroluminescence device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3015479A JP2891784B2 (en) 1991-02-06 1991-02-06 Organic electroluminescence device

Publications (2)

Publication Number Publication Date
JPH0517764A JPH0517764A (en) 1993-01-26
JP2891784B2 true JP2891784B2 (en) 1999-05-17

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JPH10270171A (en) * 1997-01-27 1998-10-09 Junji Kido Organic electroluminescent element
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