JP2891238B2 - Magnification projection exposure method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an enlarged projection exposure method and apparatus for enlarging a mask pattern and transferring it onto a substrate in a process of manufacturing an electronic device such as a semiconductor or a liquid crystal element.

[0002]

2. Description of the Related Art Due to its shape, a liquid crystal display element is thin and small as compared with an electron tube, and is a promising display in the future. Among the liquid crystal display elements, those using thin film transistors (TFTs) in an active matrix system are occupying the mainstream because of good image quality.

In order to form a TFT, an exposure apparatus having the same performance as that of a semiconductor device is required, and a proxy system, a 1: 1 mirror and a lens projection system are used.

On the other hand, the size of the display is C
It is expected that a screen having a screen as large as an RT will appear, and in that case, various problems occur in the above-described existing exposure apparatus.

[0005] Problems of large area exposure in the proximity method include fabrication of a large area high precision mask, formation of a high precision gap between the mask and the substrate, and reduction of pitch error.

[0006] On the other hand, in the projection system, a spliced portion always occurs in a screen due to its format, and a satisfactory value in terms of accuracy and electrical characteristics can be obtained at the spliced portion. In addition, there is a problem that it is difficult to reduce the cost of the apparatus from that type.

As one method for solving the problems of the above-mentioned current exposure method, a mask drawn by an electronic drawing apparatus for manufacturing a highly accurate mask, for example, a semiconductor mask up to 7 inches, is enlarged by a projection optical system. A method of exposing a large area is conceivable. An example of this enlarged projection exposure system is disclosed in
There is 2-122126. In this example, the pattern of the mask is enlarged by a projection optical system and transferred onto a substrate. The projection optical system uses parallel light on the substrate side.

[0008]

The optical system in the above-mentioned enlargement projection exposure system is configured to project a pattern as parallel light on the substrate side. An ordinary reduction projection exposure apparatus for semiconductors also uses parallel light on the wafer side on the projection side, and this method hardly causes a shape error with respect to a shift in the focal direction.

However, even if the lens used for the projection optical system is manufactured with high precision, an error always occurs with respect to the ideal value. As an error, an image distortion, a magnification error, and the like occur, and in the case of enlarged projection, the absolute value of the error also increases.

For example, even if a lens having an image distortion of 0.01% is manufactured, a screen of 500 mm has a distortion of 50 μm in a peripheral portion, and the alignment accuracy between layers forming a pattern is one digit or less than the above value. Value is required.
Further, since the characteristics of the lenses are different from each other, and the same lens cannot be formed, it is impossible to superimpose the patterns by a plurality of apparatuses. However, even if the image distortion and the magnification error are unique to each lens, if there is no variation or is extremely small, it is conceivable to form a pattern for all processes with the same device. Is limited,
There is a problem that mass productivity is reduced. Further, when exposing a larger area by seaming, a problem arises in that seams do not overlap due to distortion.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-throughput apparatus for correcting an error in an optical system and transferring a pattern in an exposure apparatus for transferring a mask pattern onto a substrate by enlarging and projecting the pattern.

[0012]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides an enlarged projection for exposing a substrate by projecting an image of a pattern formed on a mask onto the substrate via a projection optical system. In the exposure method, a first pattern formed on a first mask is enlarged and projected onto a first region on a substrate via a projection optical system, and image distortion of the enlarged and projected first pattern is detected. Correcting the image distortion by deforming the first region of the substrate, and exposing the first pattern with the image distortion corrected by enlarging the first pattern via the projection optical system;
The projection optical system and the substrate are relatively moved, and the second pattern formed on the second mask is enlarged and projected on the second region adjacent to the first region on the substrate via the projection optical system. Detecting the image distortion of the enlarged and projected second pattern, correcting the image distortion by deforming the second region of the substrate, and projecting the second pattern on the second region corrected for the image distortion. The second pattern on the substrate is enlarged and exposed to the first area by expanding and exposing through an optical system, and the second pattern is connected to the first pattern that has been exposed and enlarged for exposure. .

According to another aspect of the present invention, there is provided an enlarged projection exposure apparatus for enlarging a pattern formed on a mask onto a substrate and projecting and exposing the same, comprising: mounting means for mounting the mask; Projection exposure means for enlarging and projecting the pattern formed on the substrate mounted on the mounting means, and image distortion of the pattern formed on the mask enlarged and projected on the substrate by the expansion projection exposure means Distortion detecting means for detecting the image distortion, substrate deformation means for deforming an area where the pattern of the substrate is enlarged and projected in a direction for correcting the image distortion of the pattern detected by the image distortion detecting means, mounting means and enlarged projection exposure Moving means for relatively moving the means;
The first pattern formed on the mask is magnified and projected through the magnifying projection exposing means onto the first area on the substrate deformed in the direction in which the image distortion is corrected by the substrate deforming means. After exposing the first pattern to the first area and exposing the second pattern formed on the second mask by the substrate deforming means adjacent to the first area on the substrate via the magnifying projection exposure means. The second deformed in the direction in which the distortion is corrected
The moving means is controlled such that the second pattern on the substrate is enlarged and projected to the first area, and the second pattern on the substrate is expanded and exposed to the first pattern. And a control means for relatively moving the projection optical system and the substrate.

[0014]

That is, in the present invention, the mask is fixed and positioned on the mask positioning means, and the substrate is fixed and positioned on the substrate positioning means, and the mask is illuminated by the exposure illumination system. It is enlarged and projected on the substrate by a non-light (non-telecentric optical system) enlarged projection system. Here, the pattern of the reference mask is transferred onto the substrate, the difference between the image shape and the magnification of the mask pattern and the transfer pattern is determined, and based on the data, the minute displacement that elastically deforms the surface built in the substrate positioning means is generated. The difference between the image shape and the design value of the magnification described above is corrected by driving the unit and moving the whole unit up and down.

That is, in the above method, the image distortion and magnification error of the magnifying projection system are determined by exposing in advance, and the error amount from the design value is corrected by deforming and vertically moving the substrate surface to expose the absolute value. It manages.

Further, a relative position relationship between a projection pattern on the substrate of the mask and the pattern on the substrate is detected by position detecting / calculating means, and a difference between the mask pattern and the substrate pattern is obtained.
By driving the small displacement generating means incorporated in the substrate positioning means and moving the whole up and down based on the data, it becomes possible to perform relative value management for aligning the substrate pattern with the mask pattern and exposing.

Further, the height of the substrate surface is detected by height detecting means, a difference from the reference height is obtained, and the distortion and magnification error of the projection pattern of the mask due to the unevenness in the thickness of the substrate and the difference in the absolute thickness. Can be corrected and exposed by the substrate positioning means in the same manner as in the above two methods.

By providing two or more substrate positioning means and providing one or more of each of an exposure illumination system, a position detecting / calculating means, and a substrate surface height detecting means, different operations can be performed in parallel on the substrate positioning means. Therefore, high throughput can be obtained as an exposure apparatus.

The pattern of the same mask can be sequentially exposed on the same substrate while moving the substrate positioning means by an arbitrary distance in the horizontal direction by the moving means and the moving amount detecting means, and a plurality of correlated masks can be exposed. While replacing
Exposure while moving the substrate makes it possible to form a pattern having a larger area.

The pattern of the mask and the pattern provided on the substrate can be aligned by the position detecting / calculating means for detecting the relative position, and the exposure can be performed sequentially with a plurality of masks.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings. 1 and 2 show the configuration of the main part of one embodiment of the present invention. The mask 1 and the mask holder 2, the magnifying lens 3 for enlarging and projecting the pattern of the mask 1, the substrate 4 and the substrate chuck 5 for projecting the magnified and projected pattern of the mask 1, and the mask 1 are illuminated and passed through the magnifying lens 3. An exposure illumination system 6 for exposing the resist on the substrate 4 was constituted. An actuator (described later) for driving the substrate chuck 5 is connected to the substrate chuck 5, and a driver 7 and a computer 8 for controlling the driver 7 are connected via an interface 9. Here, the magnifying lens 3 projects the pattern of the mask 1 onto the substrate 4 as a non-telecentric optical system.

In FIG. 1, the pattern of the mask 1 is parallel light (telecentric optical system) to the magnifying lens 3.
However, as shown in FIG. 2, the light may be incident on a narrowed aperture (non-telecentric optical system). in this case,
The magnifying lens 3 can be manufactured to be smaller (small aperture) as compared with (a), and a magnification error of the magnifying lens 3 described later can be corrected by moving the mask 1 up and down.

Although a lens system is used as the magnifying projection system in FIGS. 1 and 2, a reflection optical system such as an ellipsoidal mirror 10 may be used as shown in FIG.

FIG. 4 illustrates a driving system of the substrate chuck 5. A plurality of micro-displacement generating means for elastically deforming the surface of the substrate chuck 5, for example, a plurality of piezo elements 11, are built in. Each piezo element 11 has a tip portion pressed against the surface plate so as to support the surface plate of the substrate chuck 5 from the back surface. ing. The micro-displacement generating means may be any as long as it applies a vertical micro-displacement to the surface plate of the substrate chuck 5. Further, the above-mentioned unit has a structure capable of moving in a vertical direction, for example, a structure in which a wedge-shaped Z stage 12 is driven by a motor 13 to move the entire unit vertically. Here, the piezo element 11 and the motor 13 are connected to the driver 7.

If the moving stroke of the piezo element 11 of the upper unit is sufficient, the Z stage 12 can be omitted.

In the above configuration, when the magnifying lens 3 projects the pattern of the mask 1 onto the substrate 4, the magnifying lens 3 does not always have a regular shape and magnification.

FIG. 5 shows an example of pincushion distortion, which is a typical error of an optical lens. In this method, the four corners are enlarged and the center of each side is reduced to form an image. For example, when the lattice pattern of the mask 1 is projected onto the substrate 4 by the magnifying lens 3, if there is no error, the image is projected at a predetermined magnification without distortion as indicated by a broken line. However, in actuality, as shown by the solid line, a magnification error having a different overall size and an image distortion that changes the image shape are generated.

As a method of correcting an optical error, in the case of a reduction projection exposure apparatus in which a light beam on the projection (outgoing) side is a parallel light (telecentric system), a reticle (mask) of a reduction lens is used for a magnification error. Correction is performed by raising and lowering the optical axis, and correction for trapezoidal distortion is performed by tilting a reticle (mask) or a reduction lens. In an optical system configured to be parallel light, the above-mentioned distortion of the shape can be corrected, but a typical distortion of the optical lens as shown in FIG. 5 is obtained by tilting the reticle (mask) or the optical system. May not be corrected.

When estimating the magnitude of the distortion in the case of the magnifying projection system, it is assumed that, for example, a pattern of 100 mm (5 inch mask) is magnified and projected five times by the magnifying lens 3.
Here, if the distortion of the magnifying lens 3 is 0.005%, the distortion becomes 25 μm on the substrate, which is a value that is at least one order of magnitude lower than the alignment accuracy between the layers when the target product is an active matrix type liquid crystal display element. The inability to correct the distortion is a serious problem in product production.

In particular, since each lens has individual differences, the shape and amount of distortion are also different, and it is almost impossible to superimpose patterns using a plurality of devices.

The present invention solves the above-mentioned problem. As shown in FIGS. 1 to 4, the pattern of the mask 1 is projected onto the substrate 4 as a non-telecentric optical system. The surface can be deformed and freely moved up and down.

A method for correcting the error shown in FIG. 5 according to the present invention will be described. First, a pattern is formed on a substrate 4 through a magnifying lens 3 using a reference mask 1. Here, a difference from a design value (shown by a dashed line) that should be originally obtained is obtained, and a difference m of the overall size of the pattern and a difference dij at each point are obtained.

As a means for obtaining the difference, the absolute value of the pattern formed on the substrate 4 is obtained by an optical length measuring device or the like.
What is necessary is just to calculate the difference from the design value.

FIG. 6 shows a method for correcting an error as shown in FIG. That is, when the magnification is small, the Z stage (12: not shown in the figure) of the substrate chuck 5 is lowered, and for the pincushion image distortion, the piezo element (11 : Not shown in the figure), the four corners may be driven larger.

Next, a correction method for the case where the substrate 4 has uneven thickness will be described. In the optical system of the present invention, when there is a difference in the thickness of the substrate between different substrates, a magnification error occurs, and when there is uneven thickness, the same phenomenon as image distortion occurs.

FIG. 7 shows an example of a system for measuring the thickness of the substrate 4. The main configuration is the same as that shown in FIGS. 1 to 4, but a measuring instrument for measuring the height of the surface of the substrate 4, that is, the absolute value of the thickness and the in-plane unevenness, for example, an air micrometer 14 is provided. In addition, the substrate chuck 4 is configured by a substrate chuck traveling system 15 that travels under the air micrometer 14 and moves to below the magnifying lens 3. In the above configuration, the surface height at a plurality of predetermined measurement points is measured while moving the substrate chuck 5 below the plurality of air micrometers 14 installed.

FIG. 8 is a block diagram showing an exposure method taking the thickness of the substrate 4 into consideration. The thickness hi at a plurality of locations on the substrate 4
j is detected by the air micrometer 14 and its value is input to the computer 8 through a converter 16, for example, a pressure converter and an A / D converter. Then, the lens data 17 storing the error of the magnifying lens 3 obtained as shown in FIG. 5, ie, the magnification error m, the image distortion dj, etc., and the thickness hij of the substrate 4
The control amount of the surface height of the substrate 4 is obtained by calculating for each of the locations corresponding to each other. Next, based on this data, the piezo element (11: not shown in this drawing) and the Z stage (12: not shown in this drawing) of the substrate chuck 4 are driven to be projected onto the substrate 4. The pattern becomes an ideal one in which the influence of the error of the magnifying lens 3 and the unevenness of the thickness of the substrate 4 is eliminated.

The method shown in FIGS. 1 to 8 is an exposure method for managing design values (absolute values) based on design values.
Next, an exposure method using a mask as a reference unlike the above method will be described.

FIG. 9 illustrates a mask 1 reference position aligning exposure method. The basic structure is the same as that of the above method, but a relative position detection system 20 for detecting the relative positions of the corresponding patterns on the mask 1 and the substrate 4 is provided.

The relative position detection system 20 includes an illumination light source 21 having a wavelength that does not expose the resist applied on the substrate 4, a detector 22 for detecting the pattern of the mask 1 and the substrate 4, and a lens for maintaining the positional relationship between the two. , Mirrors 23. The output from the detector 22 can be input to the computer 8 via the interface 9.

In the above configuration, the relative position detection system 20
Are moved, the difference d'ij between the opposing patterns of the mask 1 and the substrate 4 is determined for a plurality of predetermined points.
Next, a piezo element (11: not shown in this figure) and a Z stage (12: not shown in this figure) built in the substrate chuck 5 are driven so that the difference d'ij disappears.

The above-described mask 1 reference position aligning exposure method is performed at the time of overlay exposure of the second and subsequent layers.
In the exposure of the first layer, the pattern of the mask 1 is formed on the substrate 4 without correcting the error of the magnifying lens. Since the distortion amount of 25 μm in the case of the image distortion of 0.005% shown above is a very small value on the display and cannot be identified by human eyes,
No correction is required.

The relative position detection system 20 described above and FIGS.
When used in combination with the design value reference exposure method shown in FIG. 8, each pattern of the liquid crystal display element can be formed by overlapping. That is, after correcting the shape and magnification of each pattern to be superimposed on the basis of the design value standard, the relative positions of the patterns of at least two or more masks 1 and the substrate 4 are detected using the relative position detection system 20, and the relative positions are detected. By moving the substrate 4 or the mask 1 or both together so as to have a predetermined relationship, the pattern of the mask 1 and the pattern of the substrate 4 match over the entire other surface.
By successively exposing while changing the mask 1,
The pattern of the liquid crystal display element can be completed. Normally, when performing this alignment, an alignment mark is provided on each of the mask 1 and the substrate 4 and detected using the relative position detection system 20, and the amount of deviation is determined by the X, Y, θ of the substrate chuck 5. The position is adjusted by feeding back to a stage (not shown).

In the above example, the pattern of the mask 1 is
Although the example is formed on the entire upper surface, a larger substrate 4
2 shows an example of forming a pattern of the mask 1. In the following example, the mask 1 and the magnifying lens 3
Size and specifications are the same.

FIG. 10 shows an example. Here, as the area of the substrate 4 increases, the size of the substrate chuck 5 also increases.
Make it movable in the Y direction. In addition, as a device for measuring the amount of movement of the substrate chuck 5, it is assumed that positioning can be performed with high accuracy using, for example, a laser length measuring device 30. In the case of this example, a plurality of the same patterns are formed in the substrate surface using the same mask. As described above, before exposure, the projection pattern is corrected by either the design value reference or the mask reference. In the above example, substrate 4
This is an example in which four identical patterns of the mask 1 are formed thereon. However, if the size of the substrate chuck 5 is increased and the moving stroke is increased, more identical patterns can be formed.

FIG. 11 shows an example in which masks 1 of different patterns are joined to form one large product on a substrate 4. Here, first, the mask A31 is formed on the upper left of the substrate 4, then the mask B32 is replaced with the mask A31, and the substrate chuck 5 is moved so that the upper right of the substrate 4 is located below the magnifying lens 3. A pattern of B32 is formed. Hereinafter, similarly, the patterns of the mask C33 and the mask D34 can be formed on the substrate 4 while moving the substrate chuck 5, so that one large product pattern can be formed on the substrate 4. The above example is an example in which the patterns of four masks A to D are joined on the substrate 4. However, if the substrate chuck 5 is enlarged and the moving stroke is further increased, a larger product can be manufactured. It is possible.

FIG. 12 shows an example of the device configuration. A rotary index table 40, two substrate chucks 5 on the table 40, an air micrometer 14 for measuring the height of the substrate surface, a mask holder 2 for positioning the mask 1, a magnifying lens 3, a relative position detection system 20, an exposure illumination The system comprises a system 6, a substrate cassette 41 for accommodating the substrate 1, and a transport system 42 for loading and unloading the substrate 4 from the substrate cassette 41 to the substrate chuck 5.

In the above configuration, the substrate cassette 41-
From 1, the substrate 1 is transferred to the substrate chuck 5 by the transfer system 42-1. Next, the surface height of the substrate 1 is measured by running the air micrometer 14. When the above operation is completed, the table 40 is rotated by 180 ° and the substrate chuck 5 on which the substrate 1 is mounted is moved below the magnifying lens 3. In this state, the substrate 4 is newly transferred from the substrate cassette 41-1 onto the substrate chuck 5 not under the magnifying lens 3 in the same manner as described above, and the height of the surface of the substrate 1 is similarly adjusted by the air micrometer 14
Measured by On the other hand, the substrate 1 under the magnifying lens 3
With respect to the above, after the mask 1 is aligned with the relative position detection system 20, ultraviolet light is irradiated from the exposure illumination system 6 to form the pattern of the mask 1 on the substrate 4. Here, before the exposure, the substrate chuck 5 holds the piezo element (1).
1: Not shown in this figure) and the Z stage (12: not shown in this figure) are driven to correct the pattern to be formed so that there is no distortion or magnification error.

After the exposure is completed, the table 40 is rotated by 180 °, and the exposed substrate 4 is stored in the substrate cassette 41-2 by the transport system 42-2.

With the configuration as described above,
The height measurement and correction operation of the surface of the substrate 4 and the alignment and exposure of the mask 1 and the substrate 4 can be performed in parallel.

[0051]

According to the present invention, since a mask pattern can be formed on a substrate by enlarging it, a relatively small mask such as a mask drawn by an electronic drawing apparatus or a mask obtained by copying the same can be obtained. By using a high-precision mask, a large-area high-precision pattern can be formed, and high-precision devices such as active matrix liquid crystal display elements can be manufactured much larger than before. It becomes possible. Accordingly, it is possible to realize a reduction in mask cost and an increase in throughput of the apparatus, thereby improving productivity.

Further, since the pattern formed on the substrate can be formed into an arbitrary shape, even if it is minute, image distortion, which is a major problem in the case of the projection exposure method, particularly, the enlargement method, can be used.
The magnification error can be corrected, and compatibility between the apparatuses can be obtained, which also contributes to an improvement in productivity.

Further, since the magnifying lens is configured to be a non-telecentric optical system, the aperture can be made smaller than that of a magnifying lens configured to be a parallel light (telecentric optical system) that projects the same area. This makes it easier to manufacture the lens, thereby reducing the cost of the lens and making it possible to manufacture the device at a lower cost.

Further, as an apparatus configuration, a substrate chuck 2 is used.
More than one, the magnifying lens, the exposure illumination system, the substrate height detection system, etc. are composed of one or more, so that a plurality of operations can be performed in parallel, so that a high throughput of the apparatus can be realized,
Also in this respect, there is an effect that productivity is improved.

[Brief description of the drawings]

FIG. 1 is a schematic front view showing one embodiment of an exposure apparatus of the present invention.

FIG. 2 is a schematic front view showing the configuration of an embodiment of the exposure apparatus of the present invention.

FIG. 3 is a schematic front view showing an enlarged optical system different from the configuration shown in FIGS. 1 and 2;

FIG. 4 is a sectional view showing a substrate chuck.

FIG. 5 is a front view showing an optical error of a projection pattern by a magnifying lens.

FIG. 6 is a perspective view showing a method of correcting an optical error in FIG.

FIG. 7 is a perspective view showing a configuration to which a surface height measurement system of a substrate is added.

FIG. 8 is a schematic sectional view of a system for performing exposure by correcting the surface height of a substrate.

FIG. 9 is a front view showing a system for exposing a substrate according to the shape of a mask.

FIG. 10 is a plan view and a front view showing an example of the configuration of an exposure apparatus that forms a large screen by joining a plurality of screens of the same pattern.

11A and 11B are a plan view and a front view, respectively, showing an example of the configuration of an exposure apparatus that forms a large screen by joining together.

FIG. 12 is a plan view and a front view showing an example of the configuration of an exposure apparatus.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Mask 3 ... Magnification lens 4 ... Substrate
5 ... Substrate chuck 6 ... Exposure illumination system 8 ... Computer 10 ... Ellipsoidal mirror 11 ... Piezo element 12 ... Z stage 14 ... Air micrometer 1
7: Lens data 20: Relative position detection system 30: Laser length measuring device

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Naoto Nakajima 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Within Hitachi, Ltd. Production Technology Research (72) Inventor Ryuichi Funatsu 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Stock (56) References JP-A-62-122126 (JP, A) (58) Fields investigated (Int. Cl. ⁶ , DB name) H01L 21/027 G03F 7/20

Claims (2)

(57) [Claims] An enlarged projection exposure method for exposing a substrate by enlarging and projecting an image of a pattern formed on a mask onto a substrate via a projection optical system, the method comprising: The first pattern is enlarged and projected onto a first area on the substrate via the projection optical system, and the first projected image is enlarged .
Detecting the image distortion of the pattern of
Before the image distortion is corrected by deforming, the image distortion is corrected.
Said first pattern in serial first region said projection optical system
The projection optical system and the substrate are relatively moved, and the second pattern formed on the second mask is transferred to the first pattern on the substrate via the projection optical system.
Is enlarged and projected on a second area adjacent to the area
The image distortion of the second pattern is detected, and the second pattern of the substrate is detected.
The image distortion is corrected by deforming the area 2 and the image distortion is corrected.
By enlarging and exposing the second pattern to the corrected second area via the projection optical system, the second pattern is enlarged to the first area in the second area on the substrate. A magnified projection exposure method, which comprises connecting and exposing the exposed first pattern to enlarge and expose. 2. An enlargement projection exposure apparatus for enlarging and exposing a pattern formed on a mask onto a substrate, the apparatus comprising: a mounting unit for mounting the mask; Magnifying projection exposure means for performing magnifying projection exposure on a substrate mounted on the mounting means; and
Image distortion that detects image distortion of the pattern formed on the mask
Detecting means, and the pattern detected by the image distortion detecting means
The pattern on the substrate expands in a direction to correct the image distortion of the substrate.
Substrate deforming means for deforming a large projected area; moving means for relatively moving the placing means and the magnifying projection exposure means; and enlarging and projecting a first pattern formed on a first mask. Through the substrate deformation means through the exposure means
After exposing the first pattern on the first area on the substrate by enlarging and projecting the first pattern on the first area on the substrate deformed in the direction in which the image distortion is corrected , the second area is exposed.
The second pattern formed on the mask is adjacent to the first area on the substrate via the magnifying projection exposure means.
Deformation in the direction in which the image distortion is corrected by the substrate deformation means
Has been first pattern and stitched to enlarge to exposure to expand the second pattern in a second region on the substrate in the first region exposed by enlarging and projecting the second region Control means for controlling the moving means to move the projection optical system and the substrate relatively to each other.