JP2854846B2 - Manufacturing method of semiconductor circuit - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor circuit for suppressing current spikes and current ringing. 2. Description of the Related Art Conventionally, in a semiconductor circuit such as a switching power supply for controlling a large current in a high frequency region, a transient at the time of turning on and off a current is caused by the characteristics of the semiconductor itself and other circuit factors. There is a problem that a peak current exceeding a standard value based on the phenomenon, that is, fluctuation of a current spike or a pulse current, that is, current ringing is easily generated.
These phenomena hindered normalization of the circuit operation, and could eventually destroy the semiconductor. Further, such a sudden change in current has been the largest cause of equipment noise. In recent years, with the demand for strengthening international countermeasures against such noise disturbances, measures to prevent noise generated by semiconductor devices without lowering the efficiency η (output / input) have been strengthened, and prevention of noise is important. Is becoming a problem. In order to suppress such current spikes and current linking, a semiconductor circuit reactor is arranged in a semiconductor circuit.However, since the core of a conventional semiconductor circuit reactor is formed of ferrite or permalloy, etc. Sufficient suppression could not be achieved. That is, when a ferrite core is used, the squareness ratio (Br / B1) and the saturation magnetic flux density are small, so that the suppression effect is small. In order to make the core effective, the core shape needs to be large. If used,
There was a problem that the coercive force (Hc) was large and could not cope with a higher frequency. SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it is possible to prevent a current spike or a current ringing which causes noise without substantially reducing the efficiency η. manufacturing of semiconductor circuit that can be
It is intended to provide a fabrication method . That is, according to the method of manufacturing a semiconductor circuit of the present invention, an amorphous magnetic alloy is formed by the following equation: (t −) / t ≦ 0.30 (where t is the maximum plate thickness). A ribbon-shaped thin plate having a surface roughness of (thickness, average plate thickness) ;
Step of winding a bon-shaped thin plate to form a toroidal core
And a semiconductor circuit by combining the toroidal core and the conductor.
A step of forming a road reactor;
And inserting the tor into the semiconductor in series.
This is a method for manufacturing a semiconductor circuit characterized by the following. [0005] Here, t is obtained as an actual measurement value of the thin plate, and t is t = w / d · l · when the weight, width, length, and density of the thin plate are w, d, l, and ρ, respectively. This is a calculated value calculated from the expression of ρ. The value of this surface roughness is
If it exceeds 0.30, the state of the surface irregularities of the ribbon becomes remarkable (the surface becomes rough), and the iron loss in a high frequency region becomes extremely large, making the ribbon unusable. If it exceeds 0.30, the squareness ratio will also be reduced. Further, when the surface roughness is large, the packing factor of the core becomes small, and as a result, the total magnetic flux becomes small. When the maximum thickness (t) is less than 5 μm in the thin plate,
When the obtained magnetic core is wound, a large amount of an interlayer insulator is required, so that the space factor thereof is significantly reduced, which is not practical. Further, when t exceeds 40 μm, iron loss in a high-frequency region increases significantly, and the effect of suppressing current spikes and the like decreases. Therefore, in the magnetic core of the present invention, it is preferable that the maximum thickness of the ribbon is set in the range of 5 μm ≦ t ≦ 50 μm. As the amorphous magnetic alloy used in the present invention, an alloy represented by MaNbYc is generally considered. In this case, M is at least one element selected from Fe and Co, N is at least one element selected from transition metals other than Fe and Co, and Y is Si, B, P, C, G
e, at least one element selected from Al.
The composition preferably satisfies 60 ≦ a ≦ 0.90, 0 ≦ b ≦ 0.15, 0.10 ≦ C ≦ 0.35. In the present invention, a toroidal core is formed by winding an amorphous magnetic alloy in a ribbon shape by a single roll method, or a ring-shaped punch is laminated to form a toroidal core. By providing a plurality of windings, a reactor for a semiconductor circuit can be obtained. By inserting the semiconductor circuit reactor in series with the semiconductor, current spikes and ringing of the semiconductor circuit can be suppressed. Next, an embodiment of the present invention will be described. (Example 1) (Co _0.87 Fe _0.05 Ni _0.04 Mn
_An amorphous magnetic alloy represented by _0.02 Nb _0.02 ) ₇₃ Si ₁₃ B ₁₄ is formed into a ribbon-like thin plate having a thickness of 25 μm and variously varying surface roughness, and is wound about 20 times with an inner diameter of 6 mm to form a toroidal core. This was wound to form a reactor for a semiconductor circuit. These semiconductor circuit reactors are inserted in series with diodes to provide a switching power supply of 10
When the efficiency η (output / input) at 0 kHz was determined, the result shown in FIG. 1 was obtained. This indicates that the efficiency is good when the surface roughness is 0.30 or less. In the case of the surface roughness of 0.30 or less, the current spike and the current ringing were largely suppressed and were hardly observed. Example 2 (Co _0.90 Fe _0.06 Cr)
_0.04 ) An amorphous magnetic alloy represented by ₇₄ Si ₁₄ B ₁₂ is formed into a ribbon-shaped thin plate having a surface roughness of 0.20 to 0.23 and a thickness of 18 μm, 25 μm, or 45 μm by a single roll method, and then using magnesium oxide powder. Insulation between layers, inner diameter 6mm 2
Twenty turns were made into toroidal cores, and each of the toroidal cores was wound to form a reactor for a semiconductor circuit. These reactors for a semiconductor circuit were inserted in series in a diode, and the efficiency η (output / input) at 100 kHz was obtained as a switching power supply. The results shown in Table 1 were obtained. [Table 1] The semiconductor circuit obtained by the manufacturing method of the present invention can prevent current spikes and current ringing without substantially lowering the efficiency (output / input).

[Brief description of the drawings] FIG. 1 is a characteristic diagram showing efficiency η with respect to surface roughness.

────────────────────────────────────────────────── ─── Continued on the front page (56) References JP-B 7-118428 (JP, B2) JP-B 4-80523 (JP, B2) (58) Fields surveyed (Int. Cl. ⁶ , DB name) H01F 27/24

Claims (1)

(57) [Claims] Amorphous magnetic alloy Equation 1] (t -) / t ≦ 0.30 ( where t is the maximum thickness, the average thickness) comprising the steps of a ribbon-like thin plate having a surface roughness of the ribbon To form a toroidal core
Process, and combining the toroidal core and the conductor for a semiconductor circuit.
A reactor and inserting the semiconductor circuit reactor in series with the semiconductor
And a method for manufacturing a semiconductor circuit. 2. The method of manufacturing a semiconductor circuit ranging first claim of claims, wherein the amorphous magnetic alloy is 40μm or less of the thickness of the thin plate or 5 [mu] m.