JP2843446B2 - Thick film pattern forming method and thick film pattern forming material - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thick film pattern in a manufacturing process of a liquid crystal display device, a fluorescent display device, a plasma display panel, a hybrid integrated circuit and the like, and a thick film pattern forming material used therefor.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a thick film pattern on a substrate such as glass or ceramic with a conductor or insulator material, a paste material obtained by dispersing a conductor or insulator material in a binder is used. In general, a method of repeating the process of printing the paste in a pattern by screen printing, followed by drying and baking is performed. However, in order to obtain a thick film having a thickness of 50 to 100 μm by this method, 5 to 10 times of overprinting is required, and a drying step is performed each time, so that the productivity is poor and the yield is reduced. is there. Further, there is a problem that the line width accuracy of the pattern is impaired due to the viscosity of the paste, thixotropy and the like.

Therefore, as a method of obtaining a high-precision thick film pattern, a method of rubbing a paste into a female opening made of a photoresist has recently been known. That is,
In this method, a photoresist having a thickness equivalent to the pattern to be formed is applied on a substrate, and a female mold having a predetermined pattern is formed on the photoresist. And a paste dispersed in an organic medium comprising an organic solvent is rubbed into a female opening, dried and baked to make the photoresist disappear, thereby obtaining a desired thick film pattern.

[0004]

In the method using a photoresist described in the prior art, the firing temperature of the paste is 60 ° C.
The temperature at which the photoresist is ashed at about 0 ° C. is 35
By utilizing the fact that the temperature is about 0 to 400 ° C., the photoresist is ashed and eliminated at the same time as the paste is baked. However, the thickness of the photoresist is as large as 50 to 150 μm and the width of the opening is small. When the conventional organic medium-based paste is filled in a pattern that is small with respect to the photoresist, the photoresist in the opening in the opening may have cracks or There is a problem that breakage such as disconnection occurs. In particular, organic substances must not be generated from the material forming the thick film pattern in the process after firing or at the time of commercialization, and firing conditions such as temperature, time, atmosphere gas in the firing furnace, energy cost, etc. When there is a restriction on the paste, the amount of the organic binder in the paste is limited, and as a result, the bonding strength of the powder solids is weakened, and the above-described paste is inevitably destroyed. was there.

The organic medium paste often uses glass frit as a binder. If the temperature difference between the glass sintering temperature and the organic medium ashing temperature in such a paste is small, the paste after firing is often used. Organic matter remains. Therefore, in order to completely remove the organic medium, the larger the temperature difference is, the more advantageous it is. Usually, the paste firing temperature is as high as about 600 ° C. Therefore, the conventional method using a photoresist has a problem that the energy cost is high. Further, when applied to a certain production line, a high heat resistance is required for a material for forming a thick film pattern, so that there is a problem that usable materials are limited.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and it is an object of the present invention to prevent the paste from being broken during drying and firing, and to bond the powder solids. The present invention provides a thick film pattern forming method and a thick film pattern forming material used for forming a desired thick film pattern in a baking process at a lower temperature than before, which can enhance the force and the adhesion between the powder solids and the substrate. It is in.

[0007]

Under the above-mentioned background, as a result of intensive studies, it has been found that a powder solid is dispersed in an inorganic liquid vehicle mainly composed of water glass as a material to be filled in a female opening. The inventors have found that the above-mentioned problems can be solved by using a reduced inorganic paste, and have completed the present invention. Specifically, the method for forming a thick film pattern according to the present invention comprises:
After forming a photoresist layer on a substrate, and then performing pattern exposure and development on the photoresist layer to form a female mold having a required pattern of photoresist, an inorganic liquid vehicle containing water glass as a main component is formed. amount of-than the water glass to distribute the powder solids in the 10
The 90 wt% der Ru inorganic paste material filled into the opening formed by the female, and then the powder solids as a combination of water glass of the inorganic paste material caused to disappear the female by performing firing It binds on a substrate to obtain a target pattern.

The water glass as a vehicle component in the above-mentioned inorganic paste material includes water glass containing sodium silicate as a main component (sodium silicate, Na ₂ O.nSiO ₂ .mH _2).
O) is used. This water glass is made of Na ₂ O and S
There are standards of Nos. 1, 2 and 3 depending on the difference in the ratio of iO ₂ , but any of them can be used, and the compounding amount in the paste material is 10 to 90 wt%. That is, if the blending amount is less than 10 wt%, the fluidity of the paste is lost and the filling operation becomes difficult. On the other hand, if the blending amount exceeds 90 wt%, the ratio of the powder solids decreases and a desired pattern is not formed. In consideration of the fluidity at the time of forming the paste, the compounding amount is set to 2 so that the fine groove pattern can be easily filled and the surplus portion protruding from the pattern is easily scraped off.
It is preferable to use 0 to 50 wt%.

On the other hand, aggregates and pigments are used as a mixture in the powder solids of the inorganic paste material. Among these, silica, alumina, zirconia, SiC, B
N, SUS, mica and the like can be used, and as the pigment, chromium oxide, iron oxide, cobalt oxide, titanium oxide, molybdenum oxide, copper oxide, aluminum and the like can be used.

[0010] The selection of the aggregate and the pigment as the solid content of the powder is not limited to the present invention, and any suitable one may be used according to the purpose. Further, additives such as a curing agent, a stabilizer, and a dispersant may be added to the inorganic paste material as needed.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

First, as shown in FIG. 1, a negative resist film (Nopcocure F-5040, manufactured by San Nopco, thickness of 40 μm) was placed on a glass substrate 1 heated to 90 ° C.
m) were laminated with a laminating roll to form a film having a thickness of 160 μm.
Was formed. Then, as shown in FIG. 2, exposure was performed by irradiating ultraviolet rays from the mask 3 side with 250 to 300 mJ / cm ² from the mask 3 side through a film mask 3 having a line pattern on the photoresist layer 2. Thereafter, as shown in FIG. 3, the unexposed portion was exposed to 1-1-1-trichloroethane with dichloromethane.
Spray development with a solution containing 0 vol% and a line width of 100
A female die 5 having a linear opening 4 with a pitch of 300 μm was formed.

Subsequently, as shown in FIG. 4, a flat rubber 6 is moved in parallel with the pattern while contacting the flat rubber 6 with the opening 4 of the female mold 5 to fill an inorganic paste material 7 having the following composition, Excess surplus was scraped off. Vehicle content: No. 2 water glass ("Sodium silicate" manufactured by Toyo Soda Co., Ltd.) 30% by weight Powder solid content: Alumina beads (CB-A05S manufactured by Showa Denko) 60% by weight Heat-resistant black pigment (Daiichi Seika Chemical Co., Ltd. 9590) 10 wt% Further, in order to remove water in the inorganic paste material 7 thus filled, drying was performed at 80 to 90 ° C. In addition,
This step of filling the paste material 7 may be repeated a plurality of times if necessary.

Finally, a peak temperature of 450 ° C. and a holding time of 3
By baking under the conditions of 0 to 60 minutes, the photoresist is ashed and disappeared, and the solid content of the powder in the inorganic paste material 5 is sintered on a glass substrate to obtain a line width of 100 μm as shown in FIG. , Pitch 300 μm, film thickness 15
A thick film pattern 8 of 0 μm was obtained.

The glass substrate 1 on which the thick film pattern 8 was formed was used as a substrate having a cell barrier of a plasma display panel. In this case, when a discharge occurs between the cells, ultraviolet rays are generated. However, since the water glass serving as a combination of the thick film patterns 8 has excellent radiation resistance, the thick film patterns 8 may be deteriorated by the ultraviolet rays. It was effective as a cell barrier for a plasma display panel.

[0016]

As described above, according to the method for forming a thick film pattern of the present invention, an inorganic liquid vehicle containing water glass as a main component is used as a paste for filling a female opening made of a photoresist formed on a substrate. The use of an inorganic paste material in which powder solids are dispersed therein prevents the destruction of the paste due to a small change in the volume of the paste during drying and baking. The adhesion between the solid component and the substrate can be enhanced. Further, since there is no concern that organic matter remains after firing as in the case of using the conventional organic medium-based paste, a desired thick film pattern can be formed by a firing process at a lower temperature than in the past.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a state where a photoresist layer is formed on a substrate.

FIG. 2 is a cross-sectional view illustrating a step of exposing a photoresist layer to a pattern.

FIG. 3 is a cross-sectional view showing a step of developing a photoresist layer.

FIG. 4 is a cross-sectional view showing a step of filling an inorganic paste material.

FIG. 5 is a sectional view showing a thick film pattern obtained through a firing step.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Photoresist layer 3 Film mask 4 Opening 5 Female type 6 Flat rubber 7 Inorganic paste material 8 Thick film pattern

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. ⁶ , DB name) H05K 1 / 16,3 / 00 H05K 3/10-3 / 26,3 / 38 H01B 13/00 503

Claims (2)

(57) [Claims] 1. A photoresist layer is formed on a substrate, and the photoresist layer is subjected to pattern exposure and development to form a female mold having a required pattern made of photoresist. of the water glass Ri name by dispersing powder solids in an inorganic liquid vehicle to
Amount is filled with 10 to 90 wt% der Ru inorganic paste material in an opening formed by the female, and then conjugate the water glass of the inorganic paste material caused to disappear the female by performing firing A method of forming a thick film pattern, wherein a target pattern is obtained by binding powder solids on a substrate. 2. A thick film pattern filling a female opening.
A formed material, or an inorganic paste material formed by dispersing a powder solids in an inorganic liquid vehicle mainly composed of water glass
A thick film pattern forming material , wherein the compounding amount of the water glass is 10 to 90 wt%.