JP2822952B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for dry-etching a polycrystalline silicon film formed in a process for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, as semiconductor devices have become more highly integrated and more complex, their structures have become more three-dimensional. Therefore, the number of steps for forming a film on a portion having unevenness or a high step is increasing. In addition, it has become necessary to form a film of polycrystalline silicon or the like on an insulating film having a vertical step of 400 nm or more and an opening having an aspect ratio of 1 or more and pattern the film.

A typical example formed on the ground under a high step is a DRAM (Dynamic Random Acc).
The electrodes of the stacked capacitor for the ess memory are raised. Hereinafter, a method for forming a storage electrode of a stacked capacitor using a polycrystalline silicon film will be described with reference to FIG.

First, as shown in FIG. 12A, a field oxide film 22 having a thickness of about 300 nm is formed on a silicon substrate 21 by a selective oxidation method. Next is about 30
After forming a first polycrystalline silicon film of 0 nm, patterning is performed to form a gate electrode 23. Next, impurities are ion-implanted using the gate electrode 23 as a mask to form a diffusion layer 25. Next, after a silicon oxide film 24 having a thickness of about 150 nm is formed on the entire surface as an interlayer insulating film by a CVD method, a window for connecting to the diffusion layer 25 is opened. This window opening forms a step 26 of 450 to 750 nm.

Next, as shown in FIG. 12B, a second polycrystalline silicon film 27 having a thickness of 600 nm to be a storage electrode of the capacitor is formed on the entire surface. Next, C is set so that the end of the photoresist film 28 is located on the gate electrode 23.
The second portion of the portion connected to the diffusion layer 25 having no VD oxide film
The exposed second polycrystalline silicon film 27 is etched using the polycrystalline silicon film 27 as a mask. The etching in this case is performed by a reactive ion etching (RIE) method, and an etching shape having no residue in the step portion is obtained by using a gas system mainly containing a gas obtained by mixing HBr and Ar.

As a different example formed on the ground under a high step, there is a floating gate electrode of a nonvolatile memory. Hereinafter, a method for forming a floating gate electrode using a polycrystalline silicon film will be described with reference to the drawings.

First, as shown in FIG. 1A, an oxide film having a thickness of about 400 nm is formed on a silicon substrate 1 by a CVD method, and the oxide film is formed by a lithography method and an RIE method with a line width of 0.45 μm and a space. Patterning is performed to a width of 0.39 μm to form a field oxide film 2 for element isolation. Next, an oxide film having a thickness of about 50 nm is formed on the entire surface by the CVD method.
Then, an etch back is performed to form sidewalls 3 on the side surfaces of the field oxide film 2.

Next, as shown in FIG. 1B, a gate oxide film 4 having a thickness of about 20 nm is formed by a thermal oxidation method. Next, a polycrystalline silicon film 5 serving as a floating gate electrode is entirely formed on the field oxide film to a thickness of 250 to 300 nm.
Formed. As a result, the step due to the field oxide film is buried and almost flattened. Thereafter, a mask made of the photoresist film 6 is formed by lithography perpendicularly to the line of the field oxide film 2 (parallel to the paper). FIG. 1B is a sectional view taken along line AA and line BB in FIG.
(C) and FIG. 1 (d). Next, the unmasked exposed polycrystalline silicon film 5 is etched, and FIG.
(A) to (c), a floating gate electrode is formed. In the etching of the polycrystalline silicon film 5 at this time, the polycrystalline silicon film thickness is 250
There are a thin part of about 300 nm and a thick part of 650 to 700 nm, and it is necessary to perform etching at the same time.

As a method of etching a polycrystalline silicon film having such a step, a method using a mixed gas containing HBr and Ar gas as main components by RIE as shown in Japanese Patent Application Laid-Open No. 5-304119. is there. This method suppresses the generation of column-shaped etching residues by mixing Ar with HBr having a high selectivity with respect to an oxide film, thereby removing a deposition substance formed at a step portion by etching with Ar ions. It is.

Another etching method is disclosed in
As shown in Japanese Patent Application Laid-Open No. 219227/1992, in the first etching step, a mixed gas of CCl ₄ and He is used to form a lower oxide film 4.
There is a method of performing etching until C is exposed, and then performing isotropic etching using CCl ₄ , He, and SF ₆ gas in a second etching step to eliminate etching residues.
In order to increase the etching rate and the selectivity of the polycrystalline silicon film, HBr having a high selectivity and Cl having a high etch rate are used.
Gas mixtures with ₂ are also often used.

[0011]

SUMMARY OF THE INVENTION However, HBr
FIG. 4A and FIG. 4B and FIG. 4B, which are cross-sectional views taken along lines AA and BB when the polycrystalline silicon film is etched by the RIE method using a mixed gas mainly containing Ar gas and Ar gas. As shown in FIG. 4C, a columnar etching residue 7 is formed on the side wall of the field oxide film 2. This is due to the fact that HBr gas is used as a main component and that the distance between the field oxide films 2 is as narrow as 0.39 μm, so that deposition occurs on the side walls of the field oxide film 3. Further, in order to solve the problem of the etching residue 7, a gas containing a small amount of Cl (eg, CCl ₄ + H
When the polycrystalline silicon film 5 is etched by the RIE method using the method e), as shown in FIGS. 5A to 5C, no etching residue is generated, but the underlying oxide film 4 has a low selectivity. Is etched and damages the silicon substrate 1 8
give. Further, when etching is performed using a gas containing Cl under conditions of increasing the selectivity, FIG.
As shown in FIG. 2C, the notch 9 is formed on the thin polycrystalline silicon film on the field oxide film 2 because the side wall protection effect is small.
A occurs, and side etching 9B occurs in the thick polycrystalline silicon film. Further, in the RIE method, since the plasma density is low, an etching residue 5A of the tapered polycrystalline silicon is generated on the side wall of the field oxide film 2. This etching residue 5A cannot be removed even by over-etching.

As a method of removing an etching residue generated at a step, there is a method of performing isotropic etching in a second etching step as disclosed in Japanese Patent Application Laid-Open No. 2-219227. However, in this case, notching 9A is generated at the interface between the polycrystalline silicon film and the underlying oxide film at the same time as the etching residue is removed, which causes a reduction in the reliability of the semiconductor device.

An object of the present invention is to provide a method for etching a polycrystalline silicon film formed on an insulating film having a step so that a vertical etching shape can be obtained without etching a thin insulating film below, and a stepped portion can be obtained. An object of the present invention is to provide a method for manufacturing a semiconductor device which can eliminate residues.

[0014]

The method of manufacturing a semiconductor device of the present invention solving the problem to means for the] includes the step of filling the entire surface formed stepped polycrystalline silicon film after forming the insulating film with a step on the semiconductor substrate, and Cl ₂ By a dry etching method using a mixed gas of HBr and O ₂ , a first etching having a small selectivity with respect to the insulating film is performed in a low pressure region to remove the polycrystalline silicon film, and a surface of a thin portion of the insulating film is removed. Exposing, and exposing the surface of the thin insulating film to HBr and O
And performing a second etching having a high selectivity in a high-pressure region by a dry etching method using a gas mixture of ( ₂₎ and the residue of the polycrystalline silicon film.

When simultaneously etching a polycrystalline silicon film having a thin portion and a thick portion, the first etching method having a high etching rate in view of throughput and the selectivity to the oxide film in consideration of damage to the underlying oxide film. It is useful to use a second etching method having a large value. As a result of various studies using an etching apparatus that can generate high-density plasma using mainly Cl ₂ and HBr,
Etching is performed by performing a first etching in a low pressure region using a mixed gas of HBr, Cl ₂ and O _2, and then performing a second etching in a high pressure region using a mixed gas of HBr and O _2. The inventors have found that a high-speed and good etching shape can be obtained, and have reached the present invention.

[0016]

Next, the present invention will be described with reference to the drawings. 1 (a) to 1 (d) and 2 (a) to
1E is a sectional view of a semiconductor chip for explaining an embodiment of the present invention, and FIGS. 1C and 1D are AA line and BB line of FIG. 1B, respectively. Sectional view, FIG. 2
(B), (d) and (c), (d) are each shown in FIG.
FIG. 3A is a sectional view taken along line AA and line BB in FIG.

First, as shown in FIG. 1A, an oxide film having a thickness of about 400 nm is formed on a silicon substrate 1 by a CVD method, and this oxide film is formed by a lithography method and an RIE method to have a line width of 0.45 μm. A field oxide film 2 for performing element isolation is formed by patterning to a space width of 0.39 μm. Next, an oxide film having a thickness of about 50 n is formed on the entire surface by the CVD method.
m, and etch back is performed to form sidewalls 3 on the side surfaces of the field oxide film 2.

Next, as shown in FIGS. 1B to 1D, after a gate oxide film 4 having a thickness of about 20 nm is formed by a thermal oxidation method, a polycrystalline silicon film 5 serving as a floating gate electrode is formed over the entire surface. It is formed with a thickness of 250 to 300 nm. As a result, the step formed by the field oxide film 2 is buried and almost flattened. Then the field oxide film 2
A mask for the photoresist film 6 is formed by lithography perpendicularly to the line (parallel to the paper).

Next, as shown in FIGS. 2A to 2E, using the photoresist film 6 as a mask, the exposed polycrystalline silicon film 6 is etched to form a floating gate electrode. At this time, the polycrystalline silicon film 6 has a thin portion having a thickness of 250 to 300 nm and
Although there is a thick portion of 0 nm, they are simultaneously etched. Etching is performed in two steps under different conditions.

FIGS. 3 (a) and 3 (b) show an inductively coupled plasma processing apparatus capable of obtaining a plasma density of 10 ¹⁰ cm ⁻³ or more in a pressure region of 10 mTorr or less as an apparatus for etching the polycrystalline silicon film 6. It is a sectional view and a top view.

In the first etching step,
Cl as gas_Two, HBr, O_Two Using a mixed gas of
Under the condition that the selectivity with respect to the oxide film is about 15, the lower oxide film 4 is formed.
Etching until the surface appears, and then the second etchant
HBr, O as an etching gas in the etching process_TwoBlend of
Using a gas mixture and a selectivity to oxide film of 200 or more
Etching is performed for about the same time as the etching of No. 1. First
Etching conditions are: pressure 5 mTorr, dielectric play
RF power to be applied to the coil 16 disposed above the
Power of 10: coil power 300W, wafer 12
Power of RF power supply 14 applied to lower electrode 13 to be held:
Bias power 50 W, mixture introduced from gas inlet 15
Cl gas as the joint gas_TwoFlow rate 30 sccm, HBr flow rate 7
0 sccm, O_TwoThe flow rate is 1 sccm. First etch
Under the conditions in the etching step, the selectivity of the oxide film was as low as 15
As shown in FIGS. 2A to 2C, the lower gate
The etching is stopped when the oxide film 4 is exposed. others
5A remaining on the side wall of the field oxide film 2
And the shape of the polycrystalline silicon film 5 after the etching is
Is subtracted. Remove this etching residue and hem
A second etching step is required to eliminate pulling
You. The conditions for the second etching were as follows: a pressure of 20 Torr and a pressure of 20 Torr.
Il power 300W, bias power 40W, HBr flow
Amount 50 sccm, O_TwoThe flow rate is 2 sccm. This condition
2D and 2E by etching.
As described above, without damaging the gate oxide film 4,
An etched shape with no remaining etching is obtained.

Next, the conditions of the first etching step will be described in detail. First, regarding the pressure, 2 to 8 mTorr
In the range of r, as shown in FIG. 7A, the etching rate and uniformity of the polycrystalline silicon are almost constant, and the shape of the polycrystalline silicon film after the etching does not change. However, if it exceeds 10 mTorr, the etching rate of the polycrystalline silicon decreases.
The etching rate becomes about 70% of that in the case of r, and the throughput is reduced. This is due to a decrease in the plasma density. In the plasma processing apparatus shown in FIG. 3, which generates low-pressure, high-density plasma, the plasma density is maximum in a pressure region of 10 mTorr or less, and the plasma density is increased at a pressure exceeding 10 mTorr. Is to be reduced. Also,
As shown in FIG. 7B, as the pressure increases, the selectivity with respect to the oxide film improves, and deposition occurs on the side wall of the field oxide film 2, which serves as a mask to generate etching residues.

Next, when the bias power is increased, as shown in FIGS. 8A and 8B, the etching rate of the polycrystalline silicon film increases and the selectivity of the oxidation-resistant film decreases. This is achieved by changing the bias power.
This is because the energy of ions incident on the wafer greatly changes. Under the condition where the oxidation-resistant film selection ratio exceeds 30 (bias power 20 W or less), as shown in FIG. 6B, a shape abnormality called notching occurs at the interface between the polycrystalline silicon film above the step and the field oxide film. . Furthermore, side etching occurs on the side wall of the polycrystalline silicon film. This is because the angular distribution of the velocity of ions incident on the wafer is widened and scattered with an increase in the selectivity. For this reason, the oxidation resistant film selection ratio needs to be 30 or less, preferably 10 to 20.

When the mixture ratio of Cl ₂ is increased, FIG.
As shown in (a), the etching rate of the polycrystalline silicon film increases, and as shown in FIG. 6 (c), side etching 9B occurs, and the shape after etching has a large taper angle. Therefore, in order to obtain a vertical shape, Cl ₂
Is required to be 10 to 50 sccm. In this case, the selectivity to the oxide film is 15 as shown in FIG.
There is no particular problem. When the O ₂ flow rate is increased, as shown in FIG. 10A, the etching rate of the polycrystalline silicon film increases, and the shape thereof increases the side etching amount. If the O ₂ flow rate is 0 sccm, the etching rate of the polycrystalline silicon film decreases. O ₂ flow rate is 1-3s from the viewpoint of throughput and suppression of side etching
ccm is desirable.

Next, the second etching step will be described in detail. In the second etching step, a thickness of 20 nm
Since the gate oxide film 5 having a small thickness is exposed, a high selectivity with respect to the oxidation resistant film is required. Under the condition of increasing the selectivity using Cl ₂ gas, shape abnormality such as side etching occurs, and a vertical shape can be obtained by decreasing the mixture ratio of Cl ₂ . Therefore, it is effective to simply use a mixed gas of HBr and O ₂ . FIGS. 11A and 11B show the uniformity of etching rate and the selectivity of the polycrystalline silicon film when the pressure is changed using a mixed gas of HBr and O ₂ .
When the second etching is performed in a low pressure region of 10 mTorr or less, side etching 9B occurs on the side wall of the polycrystalline silicon film as shown in FIG. This side etching is eliminated by setting the pressure to 20 mTorr or more. Pressure 20mTorr, coil power 300W,
Bias power 40 W, HBr flow rate 50 sccm, O ₂
When the flow rate is 2 sccm, the selectivity with respect to the oxide film is about 200.
It is. When this condition is used in the second etching step, the etching time of the first etching step is reduced to 7 in order to remove the etching residue 8 in the first etching step.
Requires an etching time of 0% or more. When the pressure in the second etching step is increased, no shape abnormality occurs, but the etching rate of polycrystalline silicon decreases. For this reason the second
20-40 mTo
It is desirable to be within the range of rr.

The shapes when the floating gate electrode of the nonvolatile memory is formed by etching the polycrystalline silicon film by the first and second etching steps described above are as shown in FIGS. 2D and 2E. Thus, a vertical floating gate electrode can be formed without etching residue.

[0027] This embodiment is of the case of using the plasma processing apparatus shown in FIG. 3, the present invention is not limited to the plasma processing apparatus, 10 ¹⁰ cm below the pressure range 10 mTorr ^{- A} first etching step of performing etching until an underlying thin insulating film is exposed under an etching condition having a selectivity to an insulating film of 30 or less even when an etching apparatus capable of obtaining a plasma density of ³ or more is used; Next, a similar effect can be obtained by a combination of a second etching step in which etching is performed under an etching condition with a selectivity to the insulating film of 100 or more.

[0028]

As described above, according to the present invention, when a polycrystalline silicon film having a high step is etched by using low-pressure high-density plasma, the first etching step is performed as follows.
Etching is performed under a condition of a combination of Cl ₂ / HBr / O ₂ gas having a pressure of 10 mTorr or less and an etching condition of a selectivity to an oxide film of 30 or less until an underlying oxide film is exposed, and a pressure of 20 mTorr or more as a second etching step Etching is performed under the conditions of a selectivity of 100 or more by using a combination of HBr / O ₂ gas as described above to eliminate the etching residue and to anisotropically etch the polycrystalline silicon film into a vertical shape without etching the underlying thin oxide film. it can.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a semiconductor chip for describing an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a semiconductor chip for describing an embodiment of the present invention.

3A and 3B are a cross-sectional view and a top view of a plasma processing apparatus used in the embodiment.

FIG. 4 is a cross-sectional view of a semiconductor chip for explaining a defect of a method of etching a polycrystalline silicon film.

FIG. 5 is a cross-sectional view of a semiconductor chip for explaining a defect of a method of etching a polycrystalline silicon film.

FIG. 6 is a cross-sectional view of a semiconductor chip for describing a defect of a method of etching a polycrystalline silicon film.

FIG. 7 is a view showing the pressure dependence of an etching rate, uniformity, and selectivity.

FIG. 8 is a diagram showing the bias power dependence of the etching rate, uniformity, and selectivity.

FIG. 9 is a graph showing Cl ₂ flow rate dependence of etching rate, uniformity, and selectivity.

FIG. 10 is a graph showing the dependence of the etching rate, uniformity, and selectivity on the flow rate of O ₂ .

FIG. 11 is a diagram showing pressure dependency of an etching rate, uniformity, and a selection ratio.

FIG. 12 is a sectional view of a semiconductor chip for explaining a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 21 Silicon substrate 2, 22 Field oxide film 3 Side wall 4 Gate oxide film 5, 27 Polycrystalline silicon film 5A Residual etching 6 Photoresist film 7 Etching residue 8 Damage 9A Notching 9B Side etching 23 Gate electrode 24 Silicon oxide film 25 Diffusion layer 28 Photoresist film

Claims (4)

(57) [Claims] 1. A step of forming an insulating film having a step on a semiconductor substrate and then forming a polycrystalline silicon film on the entire surface to fill the step, and a dry etching method using a mixed gas of Cl ₂ , HBr and O _2. Performing a first etching having a small selectivity with respect to the insulating film in a low pressure region to remove the polycrystalline silicon film and expose a surface of a thin portion of the insulating film; and exposing a surface of the thin insulating film. Later HBr
Performing a _second etching having a high selectivity in a high pressure region by a dry etching method using a mixed gas of O ₂ and O ₂ to remove residues of the polycrystalline silicon film. Method. 2. The pressure in the first etching is 2-8.
mTorr, pressure in the second etch is 20-4
2. The method for manufacturing a semiconductor device according to claim 1, wherein the pressure is 0 mTorr. 3. The composition of the mixed gas used for the first etching is as follows: Cl ₂ is 10 to 50%, HBr is 50 to 90%,
3. The method according to claim 1, wherein O ₂ is 3% or less. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the composition of the mixed gas used for the second etching is such that HBr is 95 or more and O ₂ is 5% or less.