JP2822515B2 - Electron beam exposure method - Google Patents

Electron beam exposure method

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Publication number
JP2822515B2
JP2822515B2 JP1325025A JP32502589A JP2822515B2 JP 2822515 B2 JP2822515 B2 JP 2822515B2 JP 1325025 A JP1325025 A JP 1325025A JP 32502589 A JP32502589 A JP 32502589A JP 2822515 B2 JP2822515 B2 JP 2822515B2
Authority
JP
Japan
Prior art keywords
electron beam
beam exposure
sample
stage
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1325025A
Other languages
Japanese (ja)
Other versions
JPH03185812A (en
Inventor
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP1325025A priority Critical patent/JP2822515B2/en
Publication of JPH03185812A publication Critical patent/JPH03185812A/en
Application granted granted Critical
Publication of JP2822515B2 publication Critical patent/JP2822515B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は新らしい電子ビーム露光方法に関する。The present invention relates to a new electron beam exposure method.

[従来の技術] 従来、電子ビーム露光法は、Wフィラメント等の先端
から放射される熱電子やLaB6チップの先端から電界放射
される電子を電子光源系を通して、試料表面に形成され
たレジスト膜を図形状に露光すると云う方法が用いられ
ていた。
[Prior Art] Conventionally, an electron beam exposure method, electrons are field-emitted from the tip of the thermal electrons and LaB 6 chips emitted from the tip of such W filament via electronic light source system, a resist film formed on the surface of the sample Has been used to expose the pattern in the shape of a figure.

[発明が解決しようとする課題] しかし、上記従来技術によると、電子1ケづつの露光
は行えなく、電子束による露光となる為に電子が互いに
反発する為に、300Å以下の寸法の露光は不可能である
と云う課題があった。
[Problems to be Solved by the Invention] However, according to the above-described conventional technology, it is not possible to expose one electron at a time, and since exposure is performed by an electron beam, electrons repel each other. There was a problem that was impossible.

本発明は、かかる従来技術の課題を解決し、電子1ケ
づつの露光を可能とする事により0.1nm以下の解像力に
て、図形状に電子ビーム描画し得る新しい電子ビーム露
光法を提供する事を目的とする。
The present invention solves the problems of the prior art, and provides a new electron beam exposure method capable of drawing an electron beam in a figure shape with a resolution of 0.1 nm or less by enabling exposure of one electron at a time. With the goal.

[課題を解決するための手段] 上記課題を解決するために、本発明の電子ビーム露光
方法は、試料表面のレジストを電子ビーム露光する電子
ビーム露光方法において、 該試料を載置したステージを移動せしめるピエゾ素子
に階段状電圧を印加し前記ステージをデジタルにX−Y
移動させ、 パルス状電圧を前記試料と探針との間に印加してデジ
タルにトンネル電流を流し、 前記ステージのデジタルの移動送りに同期しつつ前記
試料表面のレジストをデジタルに露光することを特徴と
する。
[Means for Solving the Problems] In order to solve the above problems, an electron beam exposure method according to the present invention is directed to an electron beam exposure method for performing electron beam exposure on a resist on a surface of a sample, wherein the stage on which the sample is mounted is moved. A stepwise voltage is applied to the piezo element to be driven, and the stage is digitally converted into XY
Moving, applying a pulse-like voltage between the sample and the probe, digitally flowing a tunnel current, and digitally exposing the resist on the sample surface in synchronization with the digital movement of the stage. And

[実施例] 以下、実施例により本発明を詳述する。EXAMPLES Hereinafter, the present invention will be described in detail with reference to examples.

第1図は本発明の一実施例を模式的に示す電子ビーム
露光装置の断面図である。すなわち、ステージ1上に乗
せられた試料2上にはレジスト3が塗布されて成り、前
記ステージ1は支柱(1)−4により粗駆動されると共
に、ピエゾ(1)−5に印加される階段状電圧電源6か
らの階段状電圧により、例えば1mV→2mV→3mVと印加さ
れる事により起点より0.1nm→0.2nm→0.3nmと0.1nm単位
での送りが可能であり、該0.1nmの単位の送りに同期し
て、支柱(2)−7の先端に取付けられたピエゾ8への
電圧電源9からの電圧により、W針10がレジスト3との
ギャップをトンネルギャップに保ちつつ、前記W針10に
前記階段状電圧に同期して、パルス電圧電源12からのパ
ルス状電圧(必ずしも一定周期のパルスではない)を印
加してトンネルして流れる電流13を流すことにより、レ
ジスト3を0.1nmの解像力にて図形状に電子ビーム露光
することができる。
FIG. 1 is a sectional view of an electron beam exposure apparatus schematically showing one embodiment of the present invention. That is, a resist 3 is applied on a sample 2 placed on a stage 1, and the stage 1 is roughly driven by a column (1) -4 and a step applied to a piezo (1) -5. By applying a step voltage of, for example, 1 mV → 2 mV → 3 mV from the starting voltage source 6, it is possible to feed from the starting point in 0.1 nm → 0.2 nm → 0.3 nm in units of 0.1 nm, in units of 0.1 nm. In synchronization with the feed, the W needle 10 is maintained at a tunnel gap with the W needle 10 by the voltage from the voltage power supply 9 to the piezo 8 attached to the tip of the column (2) -7. In synchronization with the step voltage, a pulse voltage (not necessarily a pulse having a constant period) from a pulse voltage power supply 12 is applied to 10 to flow a tunneling current 13 so that the resist 3 has a thickness of 0.1 nm. Electron beam exposure to figure shape with resolution It can be.

尚、本例ではX軸のみのステージ駆動を示したが、Y
軸も駆動され、又、W針をX−Y駆動する方法をとって
も良い事は云うまでもない。
In this example, the stage drive of only the X axis is shown,
Needless to say, the shaft is also driven, and a method of driving the W hand in the XY direction may be adopted.

[発明の効果] 本発明は、試料表面のレジストを電子ビーム露光する
電子ビーム露光方法において、該試料を載置したステー
ジを移動せしめるピエゾ素子に階段状電圧を印加し前記
ステージをデジタルにX−Y移動させ、パルス状電圧を
前記試料と探針との間に印加してデジタルにトンネル電
流を流し、前記ステージのデジタルの移動送りに同期し
つつ前記試料表面のレジストをデジタルに露光すること
により、露光の位置ずれを防ぐことができ、0.1nm以下
の解像力にて、電子ビーム描画露光を図形状に行うこと
ができる効果を奏する。
[Effects of the Invention] The present invention relates to an electron beam exposure method for exposing a resist on a sample surface to an electron beam by applying a stepwise voltage to a piezo element for moving a stage on which the sample is mounted and digitally converting the stage into an X-ray. Y movement, applying a pulse-like voltage between the sample and the probe, digitally flowing a tunnel current, and digitally exposing the resist on the sample surface while synchronizing with the digital movement of the stage. In addition, it is possible to prevent the displacement of the exposure position, and it is possible to perform the electron beam drawing exposure in the shape of a figure with a resolution of 0.1 nm or less.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明の一実施例を示す電子ビーム露光装置の
要部の断面模式図である。 1……ステージ 2……試料 3……レジスト 4……支柱(1) 5……ピエゾ(1) 6……階段状電圧電源 7……支柱(2) 8……ピエゾ(2) 9……電圧電源 10……W針 11……トンネル・ギャップ 12……パルス電圧電源
FIG. 1 is a schematic sectional view of a main part of an electron beam exposure apparatus showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Stage 2 ... Sample 3 ... Resist 4 ... Post (1) 5 ... Piezo (1) 6 ... Step voltage power supply 7 ... Post (2) 8 ... Piezo (2) 9 ... Voltage power supply 10 W needle 11 Tunnel gap 12 Pulse voltage power supply

フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 21/027 G03F 7/20Continuation of front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/027 G03F 7/20

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】試料表面のレジストを電子ビーム露光する
電子ビーム露光方法において、 該試料を載置したステージを移動せしめるピエゾ素子に
階段状電圧を印加し前記ステージをデジタルにX−Y移
動させ、 パルス状電圧を前記試料と探針との間に印加してデジタ
ルにトンネル電流を流し、 前記ステージのデジタルの移動送りに同期しつつ前記試
料表面のレジストをデジタルに露光することを特徴とす
る電子ビーム露光方法。
An electron beam exposure method for electron beam exposure of a resist on a surface of a sample, wherein a stepwise voltage is applied to a piezo element for moving a stage on which the sample is mounted, and the stage is digitally moved XY. Applying a pulsed voltage between the sample and the probe to digitally flow a tunnel current, and digitally exposing a resist on the sample surface while synchronizing with digital movement of the stage. Beam exposure method.
JP1325025A 1989-12-15 1989-12-15 Electron beam exposure method Expired - Fee Related JP2822515B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1325025A JP2822515B2 (en) 1989-12-15 1989-12-15 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1325025A JP2822515B2 (en) 1989-12-15 1989-12-15 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPH03185812A JPH03185812A (en) 1991-08-13
JP2822515B2 true JP2822515B2 (en) 1998-11-11

Family

ID=18172305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1325025A Expired - Fee Related JP2822515B2 (en) 1989-12-15 1989-12-15 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JP2822515B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1617293A1 (en) * 2004-07-14 2006-01-18 Universität Kassel A method of aligning a first article relative to a second article and an apparatus for aligning a first article relative to a second article

Also Published As

Publication number Publication date
JPH03185812A (en) 1991-08-13

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