JP2807101B2 - Method for producing high-purity alkyl phosphine - Google Patents

Method for producing high-purity alkyl phosphine

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Publication number
JP2807101B2
JP2807101B2 JP13717191A JP13717191A JP2807101B2 JP 2807101 B2 JP2807101 B2 JP 2807101B2 JP 13717191 A JP13717191 A JP 13717191A JP 13717191 A JP13717191 A JP 13717191A JP 2807101 B2 JP2807101 B2 JP 2807101B2
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JP
Japan
Prior art keywords
tert
added
aluminum hydride
alkyl
alkylphosphine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP13717191A
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Japanese (ja)
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JPH04230292A (en
Inventor
徹 伊森
貴之 二宮
一博 近藤
紘一 中村
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Eneos Corp
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Japan Energy Corp
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、アルキルホスフィンの
製造方法に関する。特に本発明はM0CVD(Metalorga
nic Chemical Vapor Deposition)法により化合物半導体
薄膜を形成する際の原料となる高純度アルキルホスフィ
ンの製造方法に関する。
The present invention relates to a method for producing an alkyl phosphine. In particular, the present invention relates to MOCVD (Metalorga
The present invention relates to a method for producing a high-purity alkylphosphine used as a raw material when forming a compound semiconductor thin film by a (nic Chemical Vapor Deposition) method.

【0002】[0002]

【従来の技術】インジウムーリンをはじめとするIII族
ーV族化合物半導体薄膜は電子デバイスを作製する材料
として有用である。化合物半導体薄膜を形成する方法と
しては、MBE(Molecular Beam Epitaxy) 、ハライド
CVD、MOCVD 、MOMBE(MetalorganicMolecular Beam E
pitaxy) などがある。これらの中でもMOCVD あるいはMO
MBE は結晶成長系内を高真空に保つ必要がなく原料の交
換が容易であり、メンテナンスが楽であるため、使用頻
度の高まりとともに注目されつつある結晶成長法であ
る。
2. Description of the Related Art Group III-V compound semiconductor thin films such as indium-phosphorus are useful as materials for manufacturing electronic devices. As a method of forming a compound semiconductor thin film, MBE (Molecular Beam Epitaxy), halide
CVD, MOCVD, MOMBE (Metalorganic Molecular Beam E
pitaxy). Among them, MOCVD or MO
MBE is a crystal growth method that has been attracting attention as its frequency of use has increased because it is not necessary to maintain a high vacuum inside the crystal growth system, it is easy to exchange raw materials, and maintenance is easy.

【0003】ところがこれらの方法によってIII族ーリ
ン化合物半導体を作製する際には、リン化合物の原料と
して、毒性の高いリンの水素化物であるホスフィンを用
いているため、量産化に伴う原料の多量使用に不安がも
たれている。そこで近年、リン原料として、ホスフィン
に代わってアルキルホスフィンが提案され、特にモノア
ルキルホスフィンは水素を2個有するため半導体薄膜へ
の炭素の混入が少なく、毒性を低減したホスフィン代替
材料として注目されている。(例えばJ.Crystal Growt
h. 77(1986) 11)
However, when producing a group III-phosphorus compound semiconductor by these methods, phosphine, which is a highly toxic hydride of phosphorus, is used as a raw material of the phosphorus compound. I am worried. Therefore, in recent years, alkylphosphines have been proposed in place of phosphine as a phosphorus material. In particular, monoalkylphosphines, which have two hydrogen atoms, have less carbon contamination into semiconductor thin films and are attracting attention as phosphine alternative materials with reduced toxicity. . (For example, J. Crystal Growt
h. 77 (1986) 11)

【0004】アルキルホスフィンの合成法としては
アルキルハロゲノリン化合物の水素化アルミニウムリチ
ウムあるいはナトリウムによる還元 2RPCl2+LiAlH4→2RPH2 +LiAlCl4 RPCl2 +4Na ─→(+H2O→) RPH2 +2NaCl +2NaOH 亜ホスホン酸ジアルキルやホスホン酸ジアルキルの
水素化アルミニウムリチウムによる還元 R1P(OR2)2 +LiAlH4→R1PH2 ホスフィンとオレフィンの反応 PH3 +CnH2n →CnH2n+1・PH2 + (CnH2n+1)2・PH+(CnH
2n+1)3P などが知られている。 (R,R1 ,R2 :アルキル基)
As a method for synthesizing alkyl phosphine,
Alkyl halogeno-reduction with lithium aluminum hydride or sodium phosphate compound 2RPCl 2 + LiAlH 4 → 2RPH 2 + LiAlCl 4 RPCl 2 + 4Na ─ → (+ H 2 O →) RPH 2 + 2NaCl + 2NaOH the phosphonous acid dialkyl or phosphonic acid dialkyl aluminum hydride Reduction by lithium R 1 P (OR 2 ) 2 + LiAlH 4 → R 1 PH 2 Reaction of phosphine with olefin PH 3 + C n H 2n → C n H 2n + 1・ PH 2 + (C n H 2n + 1 ) 2・PH + (C n H
2n + 1 ) 3 P are known. (R, R 1 , R 2 : alkyl group)

【0005】[0005]

【発明が解決しようとする課題】これらのアルキルホス
フィンの合成法のうち、のアルキルハロゲノリン化合
物の還元による方法においては、従来還元剤として、収
率の点から主として水素化アルミニウムリチウム(LiAl
H4)が用いられている。しかし、水素化アルミニウムリ
チウムを用いてアルキルハロゲノリン化合物を還元する
と、水素化アルミニウムリチウムの強い還元力に起因し
て、副反応生成物としてハロゲン化アルキルが生成し、
これが生成アルキルホスフィン中に混入する。
Among the methods for synthesizing these alkyl phosphines, the method based on the reduction of an alkyl halogeno compound is mainly used as a conventional reducing agent mainly in terms of yield in terms of lithium aluminum hydride (LiAl
H 4 ) is used. However, when an alkylhalogenoline compound is reduced using lithium aluminum hydride, an alkyl halide is generated as a side reaction product due to the strong reducing power of lithium aluminum hydride,
This is incorporated into the resulting alkyl phosphine.

【0006】また水素化アルミニウムリチウムは通常ジ
エチルエーテルを溶媒として製造されているので、還元
生成物であるアルキルホスフィンが低沸点の場合、生成
物中にジエチルエーテルが混入し、これらの化合物が生
成物中に残存することがアルキルホスフィンの高純度化
の障害となっていた。また水素化アルミニウムリチウム
は、発火性、爆発性の強い非常に活性で危険な試薬であ
り、取扱が困難である。還元剤としてはその他に水素化
ホウ素ナトリウムを用いることもできるが、この方法で
は得られるアルキルホスフィンの収率が低い。
[0006] Further, lithium aluminum hydride is usually produced using diethyl ether as a solvent. Therefore, when alkylphosphine, which is a reduction product, has a low boiling point, diethyl ether is mixed in the product, and these compounds are converted into a product. Residuals in the solution hindered purification of the alkylphosphine. In addition, lithium aluminum hydride is a highly active and dangerous reagent that is highly flammable and explosive, and is difficult to handle. As a reducing agent, sodium borohydride can be used, but the yield of alkylphosphine obtained by this method is low.

【0007】本発明の発明者らは水素化アルミニウムリ
チウムに代替する還元剤を検討した結果、ナトリウム水
素化ビス(2−メトキシエトキシ)アルミニウムを用い
ると、還元反応においてハロゲン化アルキルが殆ど生成
せず、またジエチルエーテルの混入もなく、高純度のア
ルキルホスフィンが高収率で得られることを見出し本発
明に至った。従って本発明の目的はハロゲン化アルキル
およびジエチルエーテルを実質的に含まない高純度のア
ルキルホスフィンを得ることにある。
The inventors of the present invention have studied a reducing agent to replace lithium aluminum hydride. As a result, when sodium bis (2-methoxyethoxy) aluminum is used, almost no alkyl halide is generated in the reduction reaction. Further, the present inventors have found that a high-purity alkylphosphine can be obtained in a high yield without containing diethyl ether. Accordingly, an object of the present invention is to obtain a high-purity alkyl phosphine substantially free of alkyl halide and diethyl ether.

【0008】[0008]

【課題を解決するための手段】すなわち本発明はアルキ
ルハロゲノリン化合物を還元して、アルキルホスフィン
を合成する反応において、還元剤としてナトリウム水素
化ビス(2−メトキシエトキシ)アルミニウムを用いる
ことを特徴とするアルキルホスフィンの製造方法であ
る。
That is, the present invention is characterized in that sodium bis (2-methoxyethoxy) aluminum hydride is used as a reducing agent in a reaction for reducing an alkylhalogenoline compound to synthesize an alkylphosphine. Is a method for producing an alkylphosphine.

【0009】本発明は、いずれのアルキル基を有するア
ルキルホスフィンの製造にも適用することができ、MOCV
D 法により化合物半導体薄膜を形成する際の原料となる
イソプロピル、tert−ブチル、フェニル等のモノアルキ
ルホスフィン製造に適用し、不純物の少ないモノアルキ
ルホスフィンを製造することができる。
The present invention can be applied to the production of an alkyl phosphine having any alkyl group, and the MOCV
The method is applied to the production of monoalkyl phosphines such as isopropyl, tert-butyl, phenyl and the like as raw materials when forming a compound semiconductor thin film by the method D, and monoalkyl phosphines with few impurities can be produced.

【0010】また本発明は二ハロゲン化亜ホスホニル
(RPX2 )又は二ハロゲン化ホスホニル(RP(O)
2 )のようなアルキルジハロゲノリン化合物の還元に
よるモノアルキルホスフィンの製造、ハロゲン化亜ホス
フィニル(R2 PX)又はハロゲン化ホスフィニル(R
2 P(O)X)のようなジアルキルハロゲノリン化合物
の還元によるジアルキルホスフィンの製造のいずれにも
適用することができる。
The present invention also relates to phosphonyl dihalide (RPX 2 ) or phosphonyl dihalide (RP (O)
Production of monoalkyl phosphines by reduction of alkyl dihalogenoline compounds such as X 2 ), phosphinyl halide (R 2 PX) or phosphinyl halide (R
The present invention can be applied to any production of dialkylphosphine by reduction of a dialkylhalogenoline compound such as (2P (O) X).

【0011】ナトリウム水素化ビス(2−メトキシエト
キシ)アルミニウムは通常70%トルエン溶液として市
販されているため還元反応の前にトルエンを加熱留去す
ることが望ましい。還元剤の添加量はアルキルハロゲノ
リン化合物の量に対し3倍当量以上加えることが反応率
の点から好ましい。反応溶媒としては、高沸点エーテル
系溶媒が好ましい。特に低沸点アルキルホスフィンを合
成する場合は高沸点エーテルであるジブチルエーテル等
を用いるのが良い。
Since sodium bis (2-methoxyethoxy) aluminum is usually commercially available as a 70% toluene solution, it is desirable to distill off toluene by heating before the reduction reaction. The amount of the reducing agent to be added is preferably at least three times the equivalent of the amount of the alkylhalogenoline compound from the viewpoint of the reaction rate. As the reaction solvent, a high boiling ether solvent is preferable. In particular, when synthesizing a low-boiling alkyl phosphine, it is preferable to use a high-boiling ether such as dibutyl ether.

【0012】反応終了後、塩酸を加えることによってア
ルキルホスフィンは有機層に抽出されるので、分離回収
することができる。添加する塩酸の濃度、量は、反応収
率の点からは6Nの塩酸を多量に加えることが好ましい
が、ハロゲン化アルキル混入の低減の観点からは、添加
する塩はできるだけ少ない方が好ましい。
After completion of the reaction, the alkylphosphine is extracted into the organic layer by adding hydrochloric acid, and can be separated and recovered. The concentration and amount of hydrochloric acid to be added are preferably as large as 6N hydrochloric acid from the viewpoint of the reaction yield, but from the viewpoint of reducing alkyl halide contamination, it is preferable that the amount of added salt be as small as possible.

【0013】[0013]

【実施例】実施例1 操作はすべて不活性雰囲気下で行った。ナトリウム水素
化ビス(2−メトキシエトキシ)アルミニウム70%ト
ルエン溶液323gをフラスコに入れ100℃、5mmH
g、3時間でトルエンを加熱減圧留去した。常温にもど
した後ジブチルエーテル100mlを加えた。一方ジブチ
ルエーテル200mlを加え溶解させたtert−ブチルジク
ロロホスフィン(tert-BuPCl2 )66g(0.42mol)を滴下ロ
ートに入れ約−10℃に冷却したナトリウム水素化ビス
(2−メトキシエトキシ)アルミニウムへ滴下した。滴
下終了後60℃で1時間加熱攪拌した。常温にもどした
後、再び約−10℃に冷却し6N塩酸水溶液900mlを
徐々に加えた。反応液は白濁し、さらに加えると完全に
2層分離した。上層の有機相を抽出し、無水硫酸ナトリ
ウムを加え一夜放置後、無水硫酸ナトリウムをろ別し、
濾液を蒸留して21gの無色液体を得た。31P-NMR 及び
1H-NMRよりこの液体はtert−ブチルホスフィン(tert-B
uPH2)と同定された。収率56%、ガスクロマトグラフ
により定量したところ、ジエチルエーテルが7ppm 以
下、tert−ブチルクロライドが7ppm以下であった。
EXAMPLES Example 1 All operations were performed under an inert atmosphere. 323 g of a 70% toluene solution of sodium bis (2-methoxyethoxy) aluminum hydride is placed in a flask at 100 ° C., 5 mmH
g Toluene was removed by heating under reduced pressure for 3 hours. After returning to room temperature, 100 ml of dibutyl ether was added. Separately, 66 g (0.42 mol) of tert-butyldichlorophosphine (tert-BuPCl 2 ) dissolved in 200 ml of dibutyl ether was added to a dropping funnel and dropped to sodium bis (2-methoxyethoxy) aluminum hydride cooled to about -10 ° C. did. After completion of the dropwise addition, the mixture was heated and stirred at 60 ° C. for 1 hour. After returning to room temperature, the mixture was cooled again to about -10 ° C and 900 ml of a 6N hydrochloric acid aqueous solution was gradually added. The reaction solution became cloudy, and when further added, completely separated into two layers. The organic phase of the upper layer was extracted, anhydrous sodium sulfate was added, and the mixture was allowed to stand overnight.
The filtrate was distilled to give 21 g of a colorless liquid. 31 P-NMR and
From 1 H-NMR, this liquid was found to be tert-butylphosphine (tert-B
uPH 2 ). The yield was 56%, and quantitative analysis by gas chromatography revealed that diethyl ether was 7 ppm or less and tert-butyl chloride was 7 ppm or less.

【0014】実施例2 操作はすべて不活性雰囲気下で行った。ナトリウム水素
化ビス(2−メトキシエトキシ)アルミニウム(NaAlH
2(OC2H4OCH3)2)70%トルエン溶液396gをフラスコ
に入れ100℃、5mmHg、3時間でトルエンを加熱減圧
留去した。常温にもどした後ジブチルエーテル100ml
を加えた。一方ジブチルエーテル200mlを加え溶解さ
せたtert−ブチルジクロロホスホニル(tert-BuP(O)C
l2)80g(0.46mol)を滴下ロートに入れ約−10℃に冷却
したナトリウム水素化ビス(2−メトキシエトキシ)ア
ルミニウムへ滴下した。滴下終了後60℃で1時間加熱
攪拌した。常温にもどした後、再び約−10℃に冷却し
6N塩酸水溶液900mlを徐々に加えた。有機相を抽出
し、無水硫酸ナトリウムを加え一夜放置後、無水硫酸ナ
トリウムをろ別し、濾液を蒸留して28gの無色液体を
得た。31P-NMR 及び1H-NMRよりこの液体はtert−ブチル
ホスフィン(tert-BuPH2)と同定された。収率68%、
ガスクロマトグラフにより定量したところ、ジエチルエ
ーテルが7ppm 以下、tert−ブチルクロライドが7ppm
以下であった。
Example 2 All operations were performed under an inert atmosphere. Sodium bis (2-methoxyethoxy) aluminum hydride (NaAlH
2 (OC 2 H 4 OCH 3 ) 2 ) 396 g of a 70% toluene solution was placed in a flask, and toluene was distilled off under heating at 100 ° C., 5 mmHg and 3 hours. After returning to room temperature, 100 ml of dibutyl ether
Was added. On the other hand, tert-butyldichlorophosphonyl (tert-BuP (O) C
l 2 ) 80 g (0.46 mol) was placed in a dropping funnel and added dropwise to sodium bis (2-methoxyethoxy) aluminum hydride cooled to about -10 ° C. After completion of the dropwise addition, the mixture was heated and stirred at 60 ° C. for 1 hour. After returning to room temperature, the mixture was cooled again to about -10 ° C and 900 ml of a 6N hydrochloric acid aqueous solution was gradually added. The organic phase was extracted, anhydrous sodium sulfate was added, and the mixture was allowed to stand overnight. Then, the anhydrous sodium sulfate was filtered off, and the filtrate was distilled to obtain 28 g of a colorless liquid. This than 31 P-NMR and 1 H-NMR liquid was identified as tert- butylphosphine (tert-BuPH 2). 68% yield,
When determined by gas chromatography, the content of diethyl ether was 7 ppm or less, and that of tert-butyl chloride was 7 ppm.
It was below.

【0015】比較例1 操作はすべて不活性雰囲気下で行った。水素化アルミニ
ウムリチウム24g をジブチルエーテル100mlをフラ
スコに入れ、ジブチルエーテル200mlを加え溶解させ
たtert−ブチルジクロロホスホニル(tert-BuP(O)Cl2
75g (0.43mol)を滴下ロートを用い滴下した。滴下終
了後70℃で1時間加熱攪拌した。常温にもどした後、
再び−10℃に冷却し6N塩酸水溶液900mlを徐々に
加えた。反応液は2層に分離した。上層の有機相を抽出
し無水硫酸ナトリウムを加え一夜放置後、無水硫酸ナト
リウムをろ別し蒸留を行い20g の無色液体を得た。31
P-NMR 及び1H-NMRよりこの液体はtert−ブチルホスフィ
ンと同定された。収率52%、ガスクロマトグラフによ
り定量したところジエチルエーテル500ppm 、tert−
ブチルクロライドが120ppm 混入していた。
Comparative Example 1 All operations were performed under an inert atmosphere. 24 g of lithium aluminum hydride was placed in a flask containing 100 ml of dibutyl ether, and 200 ml of dibutyl ether was added and dissolved in tert-butyldichlorophosphonyl (tert-BuP (O) Cl 2 ).
75 g (0.43 mol) was added dropwise using a dropping funnel. After completion of the dropwise addition, the mixture was heated and stirred at 70 ° C. for 1 hour. After returning to room temperature,
The mixture was cooled again to -10 ° C and 900 ml of a 6N hydrochloric acid aqueous solution was gradually added. The reaction solution was separated into two layers. The upper organic phase was extracted, anhydrous sodium sulfate was added, and the mixture was allowed to stand overnight. Then, anhydrous sodium sulfate was filtered off and distilled to obtain 20 g of a colorless liquid. 31
This liquid was identified as tert-butylphosphine by P-NMR and 1 H-NMR. Yield 52%, quantitatively determined by gas chromatography, 500 ppm diethyl ether, tert-
Butyl chloride was mixed in at 120 ppm.

【0016】比較例2 操作はすべて不活性雰囲気下で行った。水素化ホウ素ナ
トリウム41g をジグライム50mlに懸濁させ約−10
℃に冷却後ジグライムに溶解させたtert−ブチルジクロ
ロホスフィン(tert-BuPCl2 )30g を滴下ロートを用
い滴下した。滴下終了後70℃で1時間加熱攪拌した。
常温にもどした後、再び−10℃に冷却し、抽出溶剤と
してドデカンを150mlを加えた後6N塩酸水溶液20
0mlを加えた。上層の有機相を抽出し無水硫酸ナトリウ
ムを加え一夜放置後、無水硫酸ナトリウムをろ別し蒸留
を行ったが、得られたtert−ブチルホスフィンは0.8g
(収率5%)であった。
Comparative Example 2 All operations were performed under an inert atmosphere. 41 g of sodium borohydride is suspended in 50 ml of diglyme, and the suspension is suspended at about -10
After cooling to ℃, 30 g of tert-butyldichlorophosphine (tert-BuPCl 2 ) dissolved in diglyme was added dropwise using a dropping funnel. After completion of the dropwise addition, the mixture was heated and stirred at 70 ° C. for 1 hour.
After returning to room temperature, the mixture was cooled again to -10 ° C, and 150 ml of dodecane was added as an extraction solvent.
0 ml was added. After extracting the organic phase of the upper layer, adding anhydrous sodium sulfate and allowing to stand overnight, the anhydrous sodium sulfate was filtered off and distilled, and the obtained tert-butylphosphine was 0.8 g.
(5% yield).

【0017】[0017]

【発明の効果】本発明によればアルキルハロゲノリン化
合物の還元剤としてナトリウム水素化ビス(2−メトキ
シエトキシ)アルミニウムを用いることにより高収率
で、かつハロゲン化アルキル、エーテルのような有機不
純物を実質的に含有せず、半導体薄膜製造用の高純度ア
ルキルホスフィンを得ることができる。
According to the present invention, by using sodium bis (2-methoxyethoxy) aluminum hydride as a reducing agent for alkylhalogenoline compounds, organic impurities such as alkyl halides and ethers can be removed in high yield. A high-purity alkylphosphine for producing a semiconductor thin film, which is substantially not contained, can be obtained.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中村 紘一 埼玉県戸田市新曽南三丁目17番35号 日 本鉱業株式会社内 (58)調査した分野(Int.Cl.6,DB名) C07F 9/50────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Koichi Nakamura 3-17-35 Niisominami, Toda City, Saitama Japan Co., Ltd. (58) Field surveyed (Int.Cl. 6 , DB name) C07F 9 / 50

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 アルキルハロゲノリン化合物を還元し
て、アルキルホスフィンを合成する反応において、還元
剤としてナトリウム水素化ビス(2−メトキシエトキ
シ)アルミニウムを用いることを特徴とするアルキルホ
スフィンの製造方法。
1. A method for producing an alkylphosphine, which comprises using sodium bis (2-methoxyethoxy) aluminum hydride as a reducing agent in a reaction for synthesizing an alkylphosphine by reducing an alkylhalogenoline compound.
JP13717191A 1990-10-03 1991-05-13 Method for producing high-purity alkyl phosphine Expired - Fee Related JP2807101B2 (en)

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