JP2800335B2 - Semiconductor diode - Google Patents

Semiconductor diode

Info

Publication number
JP2800335B2
JP2800335B2 JP1337449A JP33744989A JP2800335B2 JP 2800335 B2 JP2800335 B2 JP 2800335B2 JP 1337449 A JP1337449 A JP 1337449A JP 33744989 A JP33744989 A JP 33744989A JP 2800335 B2 JP2800335 B2 JP 2800335B2
Authority
JP
Japan
Prior art keywords
lead wire
glass
diode
bending
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1337449A
Other languages
Japanese (ja)
Other versions
JPH03196550A (en
Inventor
章夫 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1337449A priority Critical patent/JP2800335B2/en
Publication of JPH03196550A publication Critical patent/JPH03196550A/en
Application granted granted Critical
Publication of JP2800335B2 publication Critical patent/JP2800335B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にガラス封止型ダイオ
ードに関する。Description: TECHNICAL FIELD The present invention relates to a semiconductor device, and more particularly to a glass-sealed diode.

〔従来の技術〕[Conventional technology]

ガラス封止型ダイオードとして、第３図に示すよう
に、盛上げ電極部10Aを有する半導体チップ10の両面
（１片面は半導体基板，他の片面は盛上げ電極部10Aに
なる）にリード線12が溶接されてある大きなブロックの
電極（ヒートシンク）11を圧接しておいて、ガラスバル
ブ13を溶着固定するタイプ（DHDタイプ）のダイオード
が、生産効率が高くまた小型で大容量なことから広く用
いられている。このダイオードは、封止後冷却されたと
きに、ヒートシンクがガラスにより圧力をうけ、これに
よって半導体チップと、ヒートシンクとが圧接され接続
が維持される。As shown in FIG. 3, a lead wire 12 is welded to both sides of a semiconductor chip 10 having a raised electrode portion 10A (one surface is a semiconductor substrate and the other surface is a raised electrode portion 10A) as a glass-sealed diode as shown in FIG. Diodes of the type (DHD type), in which a large block of electrodes (heat sinks) 11 are pressed into place and the glass bulb 13 is fixed by welding, are widely used because of their high production efficiency, small size and large capacity. I have. When the diode is cooled after sealing, the heat sink receives pressure from the glass, whereby the semiconductor chip and the heat sink are pressed against each other and the connection is maintained.

このDHD型ダイオードは、２つのリード線が反対方向
に水平に伸びているので、プリント基板等へ実装する場
合は、双方のリード線をそれぞれ90゜折り曲げるか、ま
たは片方のリード線のみを180゜折り曲げてプリント基
板に垂直配置するよう加工される。This DHD diode has two lead wires extending in the opposite direction horizontally, so when mounting it on a printed circuit board etc., bend both lead wires by 90 ° or only one lead wire by 180 ° It is processed so as to be bent and arranged vertically on the printed circuit board.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

このように従来のDHD型ダイオードをプリント基板に
実装するときに、リード線の折り曲げ加工の際、チッ
プ、特にチップの盛上げ電極部とヒートシンクとの接続
が悪くなり、時には接触が無くなりオープン不良をおこ
すことがある。これは、半導体チップとヒートシンクと
の接続は圧接によるものであり、リード線の折り曲げに
より曲げ応力がヒートシンクとガラスとの間に加わると
半導体チップを圧接していたヒートシンクの応力が開放
され、最悪の場合、接触が無くなってしまうからであ
る。リード線を細くすれば問題がないのだが、リード線
は、熱伝導を良くするためにかなり太い線を用いるので
上述の問題が生ずる。従って、ガラス封止部に近い部分
でリード線を折り曲げることのないよう注意しなければ
ならないが、具体的にどこまでなら曲げて良いのか表示
がないため、同種の問題をくり返し起こしている。In this way, when mounting a conventional DHD type diode on a printed circuit board, the connection between the chip, especially the raised electrode part of the chip and the heat sink during the bending of the lead wire becomes poor, sometimes the contact is lost and the open defect occurs Sometimes. This is because the connection between the semiconductor chip and the heat sink is by pressure welding, and when bending stress is applied between the heat sink and the glass due to the bending of the lead wire, the stress of the heat sink pressing the semiconductor chip is released, and the worst case In this case, contact is lost. Although there is no problem if the lead wire is made thinner, the above-mentioned problem occurs because the lead wire is a considerably thick wire for improving heat conduction. Therefore, care must be taken not to bend the lead wire near the glass sealing portion. However, since there is no indication as to how far the lead wire can be bent, the same kind of problem is repeatedly caused.

本発明の目的は、上記の情況に鑑み、リード線の折り
曲げ加工応力による人為的オープン不良の発生を予防す
ることのできるガラス封止型半導体ダイオードを提供す
ることである。An object of the present invention is to provide a glass-sealed semiconductor diode that can prevent the occurrence of artificial open failure due to bending stress of a lead wire in view of the above situation.

〔課題を解決するための手段〕[Means for solving the problem]

本発明によれば、半導体ダイオードは、ガラス封止部
近くのリード線上に折り曲げ禁止領域表示マークを含ん
で構成される。According to the present invention, the semiconductor diode is configured to include the bending prohibition area display mark on the lead wire near the glass sealing portion.

〔作 用〕(Operation)

本発明によれば、リード線に捺印された折り曲げ禁止
領域表示マークによって折り曲げてはならないガラス封
止部近くの位置を明確に指示するので、作業者は安全な
折り曲げ位置を具体的に目視で確認することができる。According to the present invention, since the position near the glass sealing portion that should not be bent is clearly indicated by the bending prohibited area display mark stamped on the lead wire, the operator can visually confirm the safe bending position specifically. can do.

〔実施例〕〔Example〕

以下本発明を図面を参照して詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to the drawings.

第１図は本発明の一実施例を示すDHD型ダイオードの
平面図である。本実施例によれば、DHD型ダイオード
は、半導体チップのガラス封止部１と、カソードおよび
アノードのリード線２および３と、カソード・マーク４
と、リード線の根本近傍に捺印された折り曲げ禁止領域
表示マーク５とを含む。この折り曲げ禁止領域表示マー
ク５は、ダイオードのカソード・マーク４と同時に捺印
することができ、これにより作業者はオープン不良を生
じることのないリードの折り曲げ位置を具体的に知るこ
とができる。FIG. 1 is a plan view of a DHD diode showing an embodiment of the present invention. According to the present embodiment, the DHD type diode comprises a glass sealing portion 1 of a semiconductor chip, cathode and anode leads 2 and 3, and a cathode mark 4.
And a bending prohibited area display mark 5 stamped near the root of the lead wire. The bending prohibited area display mark 5 can be stamped simultaneously with the cathode mark 4 of the diode, so that the operator can know the bending position of the lead without causing the open defect.

第２図は本発明の他の実施例を示すDHD型ダイオード
の平面図である。本実施例によれば、折り曲げ禁止領域
表示マーク５は太さ約0.2mmの限界線のみが捺印され
る。この実施例では表示マーク５の捺印により半田付性
が悪くなる欠点が改善され、従来のものと変わりないよ
うにすることができる。FIG. 2 is a plan view of a DHD diode showing another embodiment of the present invention. According to the present embodiment, only the limit line having a thickness of about 0.2 mm is imprinted on the folding prohibited area display mark 5. In this embodiment, the disadvantage that the solderability is deteriorated due to the marking of the display mark 5 is improved, and it is possible to keep the same as the conventional one.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば、ガラス封止部近
くの外部リード表面に折り曲げてはならない禁止領域部
分を一目で認識できるようマーク表示が付けられている
ので、プリント基板等に実装する際のリード加工を従来
の如くオープン不良を発生することなく、きわめて容易
に且つ確実に行うことができる。As described above, according to the present invention, the mark display is provided on the external lead surface near the glass sealing portion so that the forbidden area portion which should not be bent can be recognized at a glance, so that it can be mounted on a printed circuit board or the like. Can be extremely easily and reliably performed without causing an open defect unlike the related art.

【図面の簡単な説明】[Brief description of the drawings]

第１図は本発明の一実施例を示すDHD型ダイオードの平
面図、第２図は本発明の他の実施例を示すDHD型ダイオ
ードの平面図、第３図はDHD型ダイオードの断面図であ
る。 １……ガラス封止部、 ２……カソードリード線、 ３……アノードリード線、 ４……カソード・マーク、 ５……折り曲げ禁止領域表示マーク。FIG. 1 is a plan view of a DHD diode showing one embodiment of the present invention, FIG. 2 is a plan view of a DHD diode showing another embodiment of the present invention, and FIG. 3 is a sectional view of the DHD diode. is there. 1 ... Glass sealing part 2 ... Cathode lead wire 3 ... Anode lead wire 4 ... Cathode mark 5 ... Bending prohibited area display mark

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】チップの両面から、各々リード線付電極を
圧着し、ガラスバルブにより溶着してなるガラス封止型
ダイオードにおいて、ガラス封止部近くのリード線上に
折り曲げ禁止領域であることを示す折り曲げ禁止領域表
示マークが設けられていることを特徴とする半導体ダイ
オード。In a glass-sealed diode obtained by crimping electrodes with lead wires from both sides of a chip and welding with a glass bulb, this indicates a bend-prohibited area on a lead wire near a glass-sealed portion. A semiconductor diode provided with a bending prohibition area display mark.
JP1337449A 1989-12-25 1989-12-25 Semiconductor diode Expired - Lifetime JP2800335B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1337449A JP2800335B2 (en) 1989-12-25 1989-12-25 Semiconductor diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1337449A JP2800335B2 (en) 1989-12-25 1989-12-25 Semiconductor diode

Publications (2)

Publication Number Publication Date
JPH03196550A JPH03196550A (en) 1991-08-28
JP2800335B2 true JP2800335B2 (en) 1998-09-21

Family

ID=18308739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1337449A Expired - Lifetime JP2800335B2 (en) 1989-12-25 1989-12-25 Semiconductor diode

Country Status (1)

Country Link
JP (1) JP2800335B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4858501B2 (en) 2008-07-14 2012-01-18 トヨタ自動車株式会社 Control device for automatic transmission for vehicle

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129758U (en) * 1980-02-29 1981-10-02

Also Published As

Publication number Publication date
JPH03196550A (en) 1991-08-28

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