JP2800091B2 - Terminal forming method for thin film magnetic head - Google Patents

Terminal forming method for thin film magnetic head

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Publication number
JP2800091B2
JP2800091B2 JP8385494A JP8385494A JP2800091B2 JP 2800091 B2 JP2800091 B2 JP 2800091B2 JP 8385494 A JP8385494 A JP 8385494A JP 8385494 A JP8385494 A JP 8385494A JP 2800091 B2 JP2800091 B2 JP 2800091B2
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Japan
Prior art keywords
resist
terminal
thickness
film
magnetic head
Prior art date
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JP8385494A
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Japanese (ja)
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JPH07272216A (en
Inventor
敏晴 鈴木
学 柿田
敏幸 纐纈
Original Assignee
富士電気化学株式会社
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、薄膜磁気ヘッドにリー
ド取り出し端子となる導体部を形成する方法に関し、更
に詳しく述べると、現像液に界面活性剤を添加するか、
あるいは現像の際に超音波振動を付与することにより、
パターン寸法が小さい垂直端子を歩留り良く形成する薄
膜磁気ヘッドの端子形成方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a conductor portion serving as a lead-out terminal on a thin-film magnetic head. More specifically, the present invention relates to a method for adding a surfactant to a developer.
Alternatively, by applying ultrasonic vibration during development,
The present invention relates to a method for forming terminals of a thin-film magnetic head for forming vertical terminals having a small pattern size with high yield.

【0002】[0002]

【従来の技術】ハードディスク用薄膜磁気ヘッドは、例
えば図4に要部の断面を示すように、スライダとなるセ
ラミックス基板50上に設ける上下2層の磁性膜52,
54をギャップ膜56で分離し、その間に磁界発生用及
び誘導電流ピックアップ用のコイル膜58を形成する構
成となっている。実際には各層の間に絶縁膜などが入る
し、コイル膜も複数層に重ねて形成するために、ヘッド
本体部分全体としては、20〜40μm程度の厚さとな
る。そして最後に、その上を厚さ10〜20μm程度の
アルミナ保護膜60などで覆って前記ヘッド本体部分を
保護している。
2. Description of the Related Art A thin-film magnetic head for a hard disk includes two upper and lower magnetic films 52 provided on a ceramic substrate 50 serving as a slider, as shown in FIG.
54 are separated by a gap film 56, and a coil film 58 for generating a magnetic field and for inducing an induced current is formed therebetween. In practice, an insulating film or the like is interposed between the layers, and the coil film is also formed in a plurality of layers, so that the entire head body portion has a thickness of about 20 to 40 μm. Finally, the head body is protected by covering it with an alumina protective film 60 having a thickness of about 10 to 20 μm.

【0003】前記コイル膜の端末には、外部回路との電
気的接続のためにリード取り出し端子を形成する必要が
ある。この端子は、その下部にてセラミックス基板上の
前記コイル膜に接続され、その上部は前記アルミナ保護
膜上で露出していなければならない。ヘッド本体部分の
高さにアルミナ保護膜の高さを加えると、最終製品では
30〜60μm程度となる。実際にはアルミナ保護膜を
最後に研磨するので、端子の高さとしては、それに見合
った分だけ、余計に高くしておく必要がある。しかも、
端子パターン形状は、薄膜磁気ヘッドの小形化にともな
って、ますます小さくなっており、狭い幅のパターンに
高い導体部を高精度で形成しなければならなくなってき
ている。
It is necessary to form a lead extraction terminal at an end of the coil film for electrical connection with an external circuit. This terminal is connected at its lower part to the coil film on the ceramic substrate, and its upper part must be exposed on the alumina protective film. When the height of the alumina protective film is added to the height of the head body, the final product has a thickness of about 30 to 60 μm. Actually, since the alumina protective film is polished last, it is necessary to increase the terminal height by an amount corresponding to the height. Moreover,
The terminal pattern shape is becoming smaller and smaller as the thin film magnetic head is downsized, and it is necessary to form a high conductor portion with high precision in a narrow width pattern.

【0004】リード取り出し端子は、フォトリソグラフ
ィー法により形成している。端子パターンが大きい場合
には、レジスト膜厚を60μm程度に厚くして、数回
(4回程度)の露光・現像を繰り返すことによってレジ
スト膜に該レジスト膜を貫通するように深い凹部を形成
し、メッキ法により導体部を成膜して端子とする。
[0004] The lead extraction terminals are formed by photolithography. When the terminal pattern is large, the resist film thickness is increased to about 60 μm, and exposure and development are repeated several times (about four times) to form a deep recess in the resist film so as to penetrate the resist film. A terminal is formed by depositing a conductor portion by plating.

【0005】[0005]

【発明が解決しようとする課題】最近、薄膜磁気ヘッド
の微細化に伴って、端子パターン寸法が、50×100
μmといった小さなものも要求されている。しかし、端
子のパターン幅が100μm未満にまで狭まると、上記
の方法では、深さ30μm程度までは現像できても、6
0μmを超えると全く現像できなくなってしまう。深さ
が30〜60μmの領域は、現像できるものとできない
ものが生じ、たとえ製作できるにしても歩留りが非常に
悪くなる。つまり、端子パターン幅が広い場合は問題な
いが、狭くなると、レジスト深部まで現像することが困
難となり、その結果、幅が狭く且つ背の高い導体部を形
成することができない。
Recently, with the miniaturization of thin-film magnetic heads, the terminal pattern size has become 50 × 100.
A size as small as μm is also required. However, if the pattern width of the terminal is reduced to less than 100 μm, the above-described method can develop the pattern up to a depth of about 30 μm,
If it exceeds 0 μm, development cannot be performed at all. In a region having a depth of 30 to 60 μm, there are some which can be developed and some which cannot, and even if it can be manufactured, the yield is extremely poor. In other words, there is no problem when the terminal pattern width is wide, but when the terminal pattern width is narrow, it becomes difficult to develop the resist to the deep portion, and as a result, a narrow and tall conductor cannot be formed.

【0006】そこで図5に示すように、基板70上に薄
く(厚さ5μm程度)レジスト72を塗布し、端子パタ
ーンを有するマスク74を載せて露光し、現像すること
により該レジスト膜を貫通する凹部76を形成した後、
メッキ法によりレジストの膜厚を超えて所望の高さまで
導体部78を成膜し、その後、レジスト72を除去する
方法が考え出された。導体部78の高さ(厚さ)は50
〜60μm程度は必要なので、図示のように、形成した
導体部78はレジストを除去した時にはキノコ状とな
る。
Therefore, as shown in FIG. 5, a thin (approximately 5 .mu.m) resist 72 is applied on a substrate 70, a mask 74 having a terminal pattern is placed thereon, exposed, and developed to penetrate the resist film. After forming the recess 76,
A method has been devised in which the conductor portion 78 is formed to a desired height beyond the thickness of the resist by plating, and then the resist 72 is removed. The height (thickness) of the conductor portion 78 is 50
Since about 60 μm is required, as shown, the formed conductor portion 78 has a mushroom shape when the resist is removed.

【0007】しかし、このような方法では、リード取り
出し端子がキノコ状となるために、端子寸法のばらつき
が大きく、またレジストを除去した後で形成するアルミ
ナ保護膜に異常部が生じる。即ち、端子寸法が露光マス
クに形成した端子パターンよりも大きくなり、ますます
微細化する薄膜磁気ヘッドにあって、端子を小さくする
ことが困難である。また膨らんだ上部のために、その下
方で影となる細い部分周辺で保護膜が形成され難くな
り、端子の機械的強度が弱くなる。
However, in such a method, since the lead extraction terminals have a mushroom shape, the terminal dimensions vary greatly, and an abnormal portion occurs in the alumina protective film formed after removing the resist. That is, the terminal dimensions are larger than the terminal pattern formed on the exposure mask, and it is difficult to make the terminals smaller in a thinner magnetic head that is becoming increasingly finer. In addition, because of the swollen upper portion, it is difficult to form a protective film around a thin portion that becomes a shadow below the upper portion, and the mechanical strength of the terminal is reduced.

【0008】本発明の目的は、端子パターンが小さくて
も、厚いレジストの深部まで該レジストを貫通するよう
に完全に除去でき、そのためメッキ法により成膜する導
体部をキノコ状にする必要がなく、真っ直ぐに上方に延
びたリード取り出し端子を形成できる方法を提供するこ
とである。
An object of the present invention is to remove a terminal pattern even if it is small, so that the resist can be completely removed to the depth of a thick resist so as to penetrate the resist. It is another object of the present invention to provide a method for forming a lead extraction terminal extending straight upward.

【0009】[0009]

【課題を解決するための手段】本発明は、基板上に厚く
レジストを塗布し、フォトリソグラフィー法を複数回繰
り返すことにより、該レジストを貫通するように縦断面
ほぼ矩形状の凹部を形成して、その凹部内にメッキ法に
よりリード取り出し端子となる導体部を形成する方法で
ある。本発明では、塗布するレジストの膜厚をh、凹部
の幅をaとした時、h/a≧0.6,a≦90μmであ
り、且つh>30μmの場合に、レジスト上面から深さ
30μmよりも深い部分を現像する際に、界面活性剤を
添加した現像液を用いる。あるいは、通常の現像液を使
用し、該現像液に超音波振動を与える。勿論、両者を組
み合わせて、界面活性剤を添加した現像液を用い、該現
像液に超音波振動を与える方法でもよい。
According to the present invention, a resist having a substantially rectangular cross section is formed so as to penetrate the resist by applying a thick resist on a substrate and repeating photolithography a plurality of times. And a method of forming a conductor portion serving as a lead extraction terminal in the recess by plating. In the present invention, when the thickness of the resist to be applied is h and the width of the concave portion is a, h / a ≧ 0.6, a ≦ 90 μm, and when h> 30 μm, the depth is 30 μm from the upper surface of the resist. When developing a deeper portion, a developer to which a surfactant is added is used. Alternatively, an ordinary developer is used, and the developer is subjected to ultrasonic vibration. Of course, a method may be used in which both are combined and a developer to which a surfactant is added is used, and the developer is subjected to ultrasonic vibration.

【0010】ここでレジストの膜厚hは、通常、50μ
m≦h≦80μm程度である。本発明において、h/a
≧0.6,a≦90μmであり、且つh>30μmとし
たのは、実験結果に基づくものであって、本発明が有効
な範囲を明確にするためである。即ち、レジスト膜厚h
が、パターン幅aの0.6倍以上であって、パターン幅
aが90μm以下、レジスト膜厚が30μmを超える深
さの場合に、本発明方法によって綺麗な垂直端子を形成
できる。
Here, the thickness h of the resist is usually 50 μm.
m ≦ h ≦ 80 μm. In the present invention, h / a
The reason that ≧ 0.6, a ≦ 90 μm, and h> 30 μm is based on experimental results, and is to clarify the effective range of the present invention. That is, the resist film thickness h
However, when the pattern width a is 0.6 times or more the pattern width a, the pattern width a is 90 μm or less, and the resist film thickness exceeds 30 μm, a beautiful vertical terminal can be formed by the method of the present invention.

【0011】[0011]

【作用】リード取り出し端子のパターン幅が狭くなるに
つれて、厚いレジスト膜を底部まで現像することができ
ない原因は、現像液の表面張力のために、現像液がレジ
ストに形成されつつある凹部の底部まで入り難くなるか
らである。具体的には、端子パターン幅が100μm未
満の場合に、レジストの深さが30μmを超えると、現
像液が入り難くなり、60μmを超えると、現像液は全
く入らなくなる。しかし、現像液中に界面活性剤を適量
混入すると、30μmを超える深さについても容易に現
像液が入りこんで隅々まで現像できるようになり、所望
の縦断面矩形状の凹部を、レジスト膜を貫通するように
形成できる。また、現像工程において現像液に超音波振
動を付与すると、それによって現像液が細かく振動して
狭い凹部内に入り込み、底部まで完全に現像することが
できる。
As the pattern width of the lead-out terminal becomes narrower, the reason why the thick resist film cannot be developed to the bottom part is that the developing solution is formed on the resist due to the surface tension of the developing solution. Because it becomes difficult to enter. Specifically, when the terminal pattern width is less than 100 μm, if the resist depth exceeds 30 μm, it becomes difficult to enter the developing solution, and if it exceeds 60 μm, the developing solution does not enter at all. However, when a suitable amount of surfactant is mixed in the developer, the developer can easily enter even at a depth of more than 30 μm and can be developed to every corner. It can be formed to penetrate. Further, when ultrasonic vibration is applied to the developing solution in the developing step, the developing solution vibrates finely and enters into a narrow concave portion, so that the bottom portion can be completely developed.

【0012】[0012]

【実施例】図1は本発明方法の一実施例を示す工程説明
図であり、界面活性剤入り現像剤を用いる例である。ま
ず、基板10上に、厚さ60μmのレジスト12を形成
する。そのために、4回にわたって、レジストの塗布・
乾燥を繰り返す。次にリード取り出し端子パターンを有
するマスク14を載せて露光し、ポジ型レジストに通常
用いられているアルカリ現像液(KOH水溶液:pH1
3程度)を用いて現像して、前記端子パターン部分に凹
部16を形成する。この操作を2回繰り返して、深さ3
0μmまで現像する(露光・現像及び)。
FIG. 1 is an explanatory view showing the steps of an embodiment of the method of the present invention, in which a developer containing a surfactant is used. First, a resist 12 having a thickness of 60 μm is formed on a substrate 10. For this purpose, resist application and
Repeat drying. Next, a mask 14 having a lead extraction terminal pattern is placed and exposed, and an alkali developing solution (KOH aqueous solution: pH 1) which is usually used for a positive resist is used.
3) to form a concave portion 16 in the terminal pattern portion. By repeating this operation twice, the depth 3
Develop to 0 μm (exposure / development and).

【0013】そして更にリード取り出し部のパターンを
有するマスク14を載せて露光し、レジスト上面から深
さ30μmよりも深い部分は、界面活性剤入りのアルカ
リ現像液を用いて現像する。ここでは、上記ポジ型レジ
ストに通常用いられているアルカリ現像液18リットル
中に、界面活性剤としてn−ドデシル硫酸ナトリウム
(10重量%水溶液)を5〜10ミリリットル加え、よ
く攪拌したものを用いている。この露光・現像操作を2
回繰り返して、レジスト膜を貫通するように、その底部
まで現像して、縦断面ほぼ矩形状の凹部16を形成でき
る(露光・現像及び)。
Further, a mask 14 having a pattern of a lead take-out portion is placed thereon and exposed, and a portion deeper than 30 μm from the upper surface of the resist is developed using an alkali developing solution containing a surfactant. Here, 5 to 10 ml of sodium n-dodecyl sulfate (10% by weight aqueous solution) as a surfactant was added to 18 liters of an alkali developing solution usually used for the positive resist, and the mixture was stirred well. I have. This exposure and development operation
By repeating the process a number of times, the bottom portion of the resist film is developed so as to penetrate the resist film to form a concave portion 16 having a substantially rectangular longitudinal section (exposure and development).

【0014】次に、銅メッキを施して凹部16にリード
取り出し端子となる導体部18を、厚さ50μm程度
(レジスト膜の厚さ60μmよりもやや薄い)まで成膜
し、その後、レジストを除去する。実際の薄膜磁気ヘッ
ドの製造工程では、更にこのような基板の上にアルミナ
保護膜等を成膜し、表面研磨する工程が続く。
Next, a conductor 18 serving as a lead extraction terminal is formed in the recess 16 by copper plating to a thickness of about 50 μm (slightly thinner than the thickness of the resist film 60 μm), and then the resist is removed. I do. In the actual manufacturing process of the thin-film magnetic head, a process of forming an alumina protective film or the like on such a substrate and polishing the surface continues.

【0015】この操作によって、厚さ60μmのレジス
ト膜の底部まで綺麗に現像され、縦断面ほぼ矩形状の深
さ60μmの凹部を形成することができ、キノコ状に膨
らまずに基板面に垂直にストレートに延びるリード取り
出し端子を形成することが可能となる。
By this operation, the bottom of the resist film having a thickness of 60 μm is developed neatly, and a concave portion having a depth of approximately 60 μm having a substantially rectangular longitudinal section can be formed. It is possible to form a lead extraction terminal extending straight.

【0016】図2は本発明の他の実施例を示す工程説明
図であり、現像の際に超音波振動を付与する例である。
基板10上に、厚さ60μmのレジスト膜12を形成す
る。そして、前記実施例と同様に、この操作を2回繰り
返して、深さ30μmまで現像する。
FIG. 2 is a process explanatory view showing another embodiment of the present invention, in which ultrasonic vibration is applied at the time of development.
A resist film 12 having a thickness of 60 μm is formed on a substrate 10. Then, in the same manner as in the above embodiment, this operation is repeated twice to develop to a depth of 30 μm.

【0017】その後、リード取り出し部のパターンを有
するマスク14を載せて露光し、レジスト上面から深さ
30μmよりも深い部分は、現像液に超音波振動を与え
つつ現像する。ここでは図3に示すような装置で実施し
た。超音波洗浄機30内に水32を入れ、その中に現像
容器34を設置する。現像容器34内には現像液36を
入れておく。基板38をピンセット40で把持して現像
液36中に浸漬し、超音波振動を付与して現像を行う。
現像液は、ポジ型レジストに通常用いられているアルカ
リ現像液でよい。この露光・現像操作を2回繰り返すこ
とにより、レジスト膜の底部まで綺麗に現像し、縦断面
ほぼ矩形状の凹部18を形成できる。そのため、キノコ
状に膨らまずに基板面に垂直にストレートに延びるリー
ド取り出し端子を形成することが可能となる。
Thereafter, a mask 14 having a pattern of a lead-out portion is placed and exposed, and a portion deeper than 30 μm from the upper surface of the resist is developed while applying ultrasonic vibration to the developing solution. Here, the measurement was performed using an apparatus as shown in FIG. Water 32 is put into the ultrasonic cleaning machine 30, and the developing container 34 is set therein. A developing solution 36 is put in the developing container 34. The substrate 38 is gripped with tweezers 40 and immersed in the developer 36, and is subjected to ultrasonic vibration to perform development.
The developer may be an alkali developer commonly used for positive resists. By repeating this exposure / development operation twice, it is possible to cleanly develop the resist film up to the bottom and to form the recess 18 having a substantially rectangular longitudinal section. Therefore, it is possible to form a lead extraction terminal that extends straight and perpendicular to the substrate surface without expanding in a mushroom shape.

【0018】次に、種々の端子パターン条件で端子形成
を試みた結果について述べる。レジスト膜厚hを60μ
mで一定とし、細長状の種々の端子パターン寸法(幅a
と長さb)について露光・現像操作によりレジスト膜の
底部まで綺麗に現像できるか否かを実験した。現像液と
しては、pHが13程度のKOH水溶液を用いた。結果
を表1に示す。表中、〇印は歩留り99%以上を示し、
×印は歩留り99%未満を示す。
Next, the results of attempts to form terminals under various terminal pattern conditions will be described. Resist thickness h is 60μ
m, and the dimensions of various elongated terminal patterns (width a
An experiment was conducted to determine whether the exposure and development operations can cleanly develop the bottom of the resist film with respect to the length b). As a developing solution, a KOH aqueous solution having a pH of about 13 was used. Table 1 shows the results. In the table, 〇 indicates a yield of 99% or more,
The crosses indicate a yield of less than 99%.

【0019】[0019]

【表1】 [Table 1]

【0020】従来方法では、幅aが90μm以下の場合
(h/a≧0.6)には、歩留りが悪くなり、特に幅が
50μmにもなるとレジスト膜底部まで現像できない。
それに対して本発明方法A及びBは、ともに幅50μm
でも99%以上の歩留りでレジスト膜底部まで綺麗な縦
断面ほぼ矩形状の凹部を形成することができる。なお幅
aが100μmの場合、本発明方法A及びBでは空欄と
なっているが、これは従来方法でも実施可能なため、あ
えて本発明のような方法を採用する必要が無いことを示
している。
In the conventional method, when the width a is 90 μm or less (h / a ≧ 0.6), the yield is deteriorated. In particular, when the width is as large as 50 μm, development to the bottom of the resist film cannot be performed.
In contrast, both methods A and B of the present invention have a width of 50 μm.
However, it is possible to form a recess having a substantially vertical cross section and a beautiful vertical section up to the bottom of the resist film with a yield of 99% or more. Note that when the width a is 100 μm, the method is blank in the methods A and B of the present invention, but this can be performed by the conventional method, which indicates that it is not necessary to adopt the method of the present invention. .

【0021】上記実施例において、超音波振動を付与す
る第2の実施例の場合、通常の現像剤を用いているが、
第1の実施例と同様、界面活性剤入りの現像剤を用い
て、それに超音波振動を付与する方法でもよいことは言
うまでもない。
In the above embodiment, in the case of the second embodiment in which ultrasonic vibration is applied, a normal developer is used.
As in the first embodiment, it goes without saying that a method may be used in which a developer containing a surfactant is used and ultrasonic vibration is applied thereto.

【0022】[0022]

【発明の効果】本発明は上記のように、現像液に界面活
性剤を混入するか、もしくは超音波振動を付与しつつ現
像する方法であるから、レジスト膜が厚く且つ端子パタ
ーン寸法が狭くなっても、現像液が十分にレジスト凹部
の深部まで行きわたり、現像できる。そのため、狭い端
子パターンであっても、キノコ状ではなく、綺麗に垂直
方向にストレートに延びる形状の端子を、歩留り良く形
成でき、薄膜磁気ヘッドをより一層小形化することが可
能となる。
As described above, the present invention is a method of mixing a surfactant into a developer or performing development while applying ultrasonic vibration, so that the resist film becomes thicker and the terminal pattern size becomes narrower. However, the developing solution can sufficiently spread to the deep portion of the resist concave portion and can be developed. Therefore, even if the terminal pattern is narrow, it is possible to form a terminal that is not mushroom-shaped but extends neatly in the vertical direction with good yield, and it is possible to further reduce the size of the thin-film magnetic head.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る端子形成方法の一実施例を示す工
程説明図。
FIG. 1 is a process explanatory view showing one embodiment of a terminal forming method according to the present invention.

【図2】本発明に係る端子形成方法の他の実施例を示す
工程説明図。
FIG. 2 is a process explanatory view showing another embodiment of the terminal forming method according to the present invention.

【図3】本発明で用いる現像装置の一例を示す説明図。FIG. 3 is an explanatory diagram illustrating an example of a developing device used in the present invention.

【図4】薄膜磁気ヘッドの要部の拡大断面図。FIG. 4 is an enlarged sectional view of a main part of the thin-film magnetic head.

【図5】従来方法の一例を示す工程説明図。FIG. 5 is a process explanatory view showing an example of a conventional method.

【符号の説明】[Explanation of symbols]

10 基板 12 レジスト膜 14 マスク 16 凹部 18 導体部 DESCRIPTION OF SYMBOLS 10 Substrate 12 Resist film 14 Mask 16 Depression 18 Conductor

フロントページの続き (56)参考文献 特開 平5−12624(JP,A) 特開 平3−154214(JP,A) (58)調査した分野(Int.Cl.6,DB名) G11B 5/31Continuation of the front page (56) References JP-A-5-12624 (JP, A) JP-A-3-154214 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) G11B 5 / 31

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基板上にレジストを塗布し、フォトリソ
グラフィー法を複数回繰り返すことにより、該レジスト
を貫通するように縦断面ほぼ矩形状の凹部を形成し、そ
の凹部内にメッキ法によりリード取り出し端子となる導
体部を形成する方法において、塗布するレジストの膜厚
をh、凹部の幅をaとした時、h/a≧0.6,a≦9
0μmであり、且つh>30μmの場合に、レジスト上
面から深さ30μmよりも深い部分を現像する際に、界
面活性剤を添加した現像液を用いることを特徴とする薄
膜磁気ヘッドの端子形成方法。
1. A resist is applied on a substrate, and a photolithography method is repeated a plurality of times to form a recess having a substantially rectangular cross section so as to penetrate the resist, and a lead is taken out of the recess by plating. In the method of forming a conductor portion serving as a terminal, when the thickness of a resist to be applied is h and the width of a concave portion is a, h / a ≧ 0.6 and a ≦ 9
A method for forming a terminal of a thin-film magnetic head, characterized in that a developing solution to which a surfactant is added is used when developing a portion deeper than 30 μm from the resist upper surface when h> 30 μm and h> 30 μm. .
【請求項2】 基板上にレジストを塗布し、フォトリソ
グラフィー法を複数回繰り返すことにより、該レジスト
を貫通するように縦断面ほぼ矩形状の凹部を形成し、そ
の凹部内にメッキ法によりリード取り出し端子となる導
体部を形成する方法において、塗布するレジストの膜厚
をh、凹部の幅をaとした時、h/a≧0.6,a≦9
0μmであり、且つh>30μmの場合に、レジスト上
面から深さ30μmよりも深い部分を現像する際に、現
像液に超音波振動を付与しつつ行うことを特徴とする薄
膜磁気ヘッドの端子形成方法。
2. A resist is applied on a substrate, and a photolithography method is repeated a plurality of times to form a recess having a substantially rectangular cross section so as to penetrate the resist, and a lead is taken out by plating in the recess. In the method of forming a conductor portion serving as a terminal, when the thickness of a resist to be applied is h and the width of a concave portion is a, h / a ≧ 0.6 and a ≦ 9
0 h and when h> 30 μm, when developing a portion deeper than 30 μm from the resist upper surface, the development is performed while applying ultrasonic vibration to the developing solution, wherein the terminal formation is performed. Method.
【請求項3】 レジストの膜厚hが、50μm≦h≦8
0μmである請求項1又は2記載の方法。
3. The resist has a thickness h of 50 μm ≦ h ≦ 8.
The method according to claim 1, wherein the thickness is 0 μm.
JP8385494A 1994-03-30 1994-03-30 Terminal forming method for thin film magnetic head Expired - Fee Related JP2800091B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8385494A JP2800091B2 (en) 1994-03-30 1994-03-30 Terminal forming method for thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8385494A JP2800091B2 (en) 1994-03-30 1994-03-30 Terminal forming method for thin film magnetic head

Publications (2)

Publication Number Publication Date
JPH07272216A JPH07272216A (en) 1995-10-20
JP2800091B2 true JP2800091B2 (en) 1998-09-21

Family

ID=13814285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8385494A Expired - Fee Related JP2800091B2 (en) 1994-03-30 1994-03-30 Terminal forming method for thin film magnetic head

Country Status (1)

Country Link
JP (1) JP2800091B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007257747A (en) 2006-03-24 2007-10-04 Fujitsu Ltd Conductor pattern forming method
JP2018112674A (en) * 2017-01-12 2018-07-19 株式会社ニコン Pattern formation method

Also Published As

Publication number Publication date
JPH07272216A (en) 1995-10-20

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