JP2797839B2 - Semiconductor substrate surface treatment equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate surface treatment apparatus for performing a process before forming a photoresist on a pattern of a semiconductor integrated circuit or the like on a semiconductor substrate.

[0002]

2. Description of the Related Art In the manufacture of a semiconductor integrated circuit, HMDS processing performed as a processing before applying a photoresist is performed by:
In the process performed to improve the adhesion between the photoresist and the semiconductor substrate, the development is performed after exposure for forming a resist pattern, or after the resist pattern is formed, the semiconductor substrate is immersed in a hydrofluoric acid aqueous solution. This is performed in order to prevent water or an aqueous solution from entering between the photoresist and the semiconductor substrate in wet etching.

As shown in FIG. 3, a conventional HMDS processing apparatus includes a hot plate 11 capable of controlling the temperature from room temperature to 200 ° C., and a H plate at a temperature higher than room temperature (for example, 80 ° C.).
A heat insulating cover 14 for keeping the processing temperature constant so that the MDS processing can be performed, and 20 to 50 diameters 1 on the lower surface which are large enough to cover the entire semiconductor substrate 12.
and a blow-out plate 13 formed of a circular plate having holes in the order of mm in the plane. A nitrogen (N ₂ ) gas containing HMDS is applied to the surface of the semiconductor substrate 12 placed on the plate 11. Is supplied from the blowing plate 13 and processed.

The N ₂ gas containing HMDS is HMDS
DS is supplied from a bubbler 16 for bubbling with N ₂ gas to a blowing plate 13 through a pipe 15.

[0005]

The above-mentioned conventional HMD
In the S treatment, after applying HMDS without removing moisture from the surface of the semiconductor substrate, the photoresist is applied. Therefore, when moisture is attached to the substrate surface, the adhesion between the photoresist and the substrate surface is reduced. become weak. In particular, as shown by the following formula, HMDS reacts with moisture to produce hexamethylenedisiloxane.

[0006]

Embedded image

The presence of the hexamethylene disiloxane weakens the adhesion between the photoresist and the surface of the semiconductor substrate, and increases the adhesion between the photoresist and the semiconductor substrate, thereby preventing the photoresist from peeling off the semiconductor substrate. The effect of the HMDS process is lost, the photoresist is peeled off in the wet etching process, or the amount of side etching is increased, and the pattern of the semiconductor circuit is incompletely formed, or the circuit pattern is thinner than the design size, and the product is manufactured. Disadvantageously lowers the yield.

An object of the present invention is to provide a semiconductor substrate surface treatment apparatus in which the adhesion between a photoresist and a semiconductor substrate is enhanced.

[0009]

In order to achieve the above object, a semiconductor substrate surface treatment apparatus according to the present invention has a reduced pressure processing unit and an HMDS processing unit, and the semiconductor substrate surface treatment apparatus is applied before a photoresist is applied. A semiconductor substrate surface treatment apparatus for performing a surface treatment, wherein the pressure reducing unit removes moisture on the surface of the semiconductor substrate under reduced pressure.
The processing unit applies HM to the surface of the substrate from which the moisture has been removed under reduced pressure.
The coating treatment of DS (hexamethylene disilazane) is performed.

[0010]

After the moisture on the surface of the semiconductor substrate is removed, a coating process of HMDS (hexamethylene disilazane) is performed on the substrate surface.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a configuration diagram showing Embodiment 1 of the present invention.

In FIG. 1, the substrate surface treating apparatus according to the present embodiment has a decompression processing unit A and an HMDS processing unit.

The decompression processing unit A comprises a decompression tank base portion 18 and a decompression tank upper lid 17 constituting a decompression chamber, a plate 11A for supporting the semiconductor substrate 12 in the decompression chamber, and a vacuum pump 19 for evacuating the decompression chamber. Have been.

[0015] The HMDS processing unit B has a
A plate 11A whose temperature can be controlled to 0 ° C., and a heat insulating cover 14 for keeping the processing temperature constant so that HMDS processing can be performed at a temperature higher than room temperature (for example, 80 ° C.).
And a blow-out plate 13 made of a disk having a size enough to cover the entire semiconductor substrate 12 and having 20 to 50 holes of about 1 mm in diameter provided on the lower surface thereof evenly in the plane.

In the embodiment, the semiconductor substrate 12 is placed on the plate 11A, and the upper lid 17 which moves up and down is lowered, so that the vacuum tank is sealed. And about 60mmHg
The vacuum treatment is performed at a vacuum degree of 1 minute. By this decompression treatment, moisture on the surface of the semiconductor substrate 12 is removed.

After the semiconductor substrate 12 is subjected to decompression processing by the decompression processing unit A, H
It is transported to the HMDS processing unit B which performs MDS processing.
A process is performed in which the semiconductor substrate 12 is placed on the plate 11 of the HMDS processing unit B, and N ₂ gas containing HMDS is blown out from the blowing plate 13 to the surface of the semiconductor substrate 12 to adhere HMDS to the surface of the semiconductor substrate 12. .

The plate 11 is a plate whose temperature can be controlled from room temperature to 200 ° C., and the processing is performed at room temperature or in a heated state depending on the state of the semiconductor substrate.

There are no particular restrictions on the degree of vacuum in the decompression process, the time for the decompression process, and the speed of the decompression.

(Embodiment 2) FIG. 2 is a configuration diagram showing Embodiment 2 of the present invention.

The difference between this embodiment and the first embodiment is that the heater-equipped plate 11B of the decompression processing unit A is heated from room temperature to 2
The processing can be performed at room temperature or in a heated state, depending on the state of the semiconductor substrate or the like, using a material capable of controlling the temperature up to 00 ° C. The operation will be described below together with the operation.

The semiconductor substrate 12 is placed on the plate 11B heated to 80 ° C. in the decompression processing unit A, and the upper cover 17 which moves up and down is lowered, the decompression tank is closed, and the vacuum degree is reduced to about 60 mmHg. For 30 seconds. By this decompression treatment, moisture on the surface of the semiconductor substrate 12 is removed.

After performing the decompression process, the semiconductor substrate 12
Is transported to the HMDS processing unit B, and the semiconductor substrate 12
Is subjected to HMDS treatment. The processing in the HMDS processing unit B is exactly the same as in the first embodiment.

There is no particular limitation on the degree of vacuum in the decompression process, the time for the decompression process, and the speed of the decompression.

In the present embodiment, since the decompression treatment is performed while heating at a temperature higher than room temperature, there is an advantage that the water on the surface of the semiconductor substrate 12 can be efficiently removed in a short time.

[0026]

As described above, according to the present invention, after the water on the semiconductor substrate surface is removed under reduced pressure by the reduced pressure processing unit,
Since HMDS is adhered to the surface of the semiconductor substrate by the HMDS processing unit, a sufficient adhesive force can be provided between the surface of the semiconductor substrate and the photoresist in the wet etching process, and as shown in FIG. There is an effect that the etch amount can be reduced.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the present invention.

FIG. 3 is a configuration diagram showing a conventional semiconductor substrate surface treatment apparatus.

FIG. 4 is a diagram comparing a side etch amount in wet etching between a semiconductor substrate surface treatment apparatus of the present invention and a conventional semiconductor substrate surface treatment apparatus.

[Explanation of symbols]

 A decompression processing unit B decompression processing unit 11, 11A plate 11B plate (with heater) 12 semiconductor substrate 13 blowout plate 14 heat retaining cover 15 pipe 16 bubbler 17 decompression tank top lid 18 decompression tank base 19 vacuum pump

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁶ , DB name) H01L 21/027 G03F 7/16

Claims (1)

(57) [Claims] 1. A semiconductor substrate surface treatment apparatus having a reduced pressure processing unit and an HMDS processing unit for performing a surface treatment of a semiconductor substrate before applying a photoresist, wherein the reduced pressure unit is configured to remove water from a surface of the semiconductor substrate. Wherein the HMDS processing unit performs a coating process of HMDS (hexamethylene disilazane) on the substrate surface from which water has been removed under reduced pressure.