JP2771811B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2771811B2 JP2771811B2 JP63021276A JP2127688A JP2771811B2 JP 2771811 B2 JP2771811 B2 JP 2771811B2 JP 63021276 A JP63021276 A JP 63021276A JP 2127688 A JP2127688 A JP 2127688A JP 2771811 B2 JP2771811 B2 JP 2771811B2
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- Prior art keywords
- wafer
- electromagnetic wave
- susceptor
- sic
- heating
- Prior art date
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Description
【発明の詳細な説明】 〔概要〕 半導体製造装置に関し、 ウエハの加熱温度のウエハ全面に亘る均一化を図るこ
とを目的とし、 ウェハの加熱に寄与する電磁波の波長領域のうち、該
ウェハに対する透過能が強い波長領域の電磁波に対して
吸収帯を有し、且つ、該ウェハの加熱に寄与する電磁波
に対して低い反射率を有するSiC製のフィルタを、ヒー
タのウェハとの間に備えて構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] In a semiconductor manufacturing apparatus, an object of the present invention is to equalize a heating temperature of a wafer over the entire surface of a wafer, and to transmit the electromagnetic wave contributing to heating of the wafer in a wavelength range of the wafer. A high-performance SiC filter having an absorption band for electromagnetic waves in a wavelength region and having a low reflectance for electromagnetic waves contributing to heating of the wafer is provided between the heater and the wafer. I do.
本発明は半導体製造装置に関する。 The present invention relates to a semiconductor manufacturing apparatus.
CVD装置等の半導体製造装置には、ウエハを所定温度
に加熱する装置が備えてある。製造された半導体装置の
品質の均一化を図り、歩留りを上げるためには、ウエハ
が全面に亘って等しい温度に加熱されることが必要であ
る。2. Description of the Related Art A semiconductor manufacturing apparatus such as a CVD apparatus includes an apparatus for heating a wafer to a predetermined temperature. In order to make the quality of the manufactured semiconductor device uniform and increase the yield, it is necessary that the wafer is heated to the same temperature over the entire surface.
ウエハの上面にAl配線を形成し、この上に絶縁膜をCV
D装置により形成する工程がある。この工程では、上面
にAl配線が形成されたウエハを加熱装置で加熱する。Al wiring is formed on the upper surface of the wafer, and an insulating film is
There is a step of forming using a D apparatus. In this step, the wafer on which the Al wiring is formed on the upper surface is heated by a heating device.
このようなウエハは、近年の配線の多層化に伴って、
中央部については熱が逃げにくく熱が蓄積し易い状態と
なっており、中央部の温度が周辺部の温度に比べて相当
高くなり易い。Such wafers have recently been developed with the increasing number of wiring layers,
The central portion is in a state in which heat hardly escapes and heat is easily accumulated, and the temperature of the central portion tends to be considerably higher than the temperature of the peripheral portion.
従って、均一加熱のために、ウエハ加熱装置には特別
の工夫が必要とされる。Therefore, a special device is required for the wafer heating apparatus for uniform heating.
第６図は従来の１例の半導体製造装置１の概略構成を
示す。FIG. 6 shows a schematic configuration of a conventional semiconductor manufacturing apparatus 1 as an example.
２はヒータ、３はサセプタである。サセプタ３はイン
コネル（74Ni−16Cr−8Fe−2.3Ta＋Nb）製である。2 is a heater and 3 is a susceptor. The susceptor 3 is made of Inconel (74Ni-16Cr-8Fe-2.3Ta + Nb).
４はウエハであり、上面にAl配線５が数層形成してあ
る。Reference numeral 4 denotes a wafer on which several layers of Al wiring 5 are formed.
ヒータ２がサセプタ３を加熱する。加熱されたサセプ
タ３より電磁波（熱線）が出、これらがウエハ４を加熱
する。The heater 2 heats the susceptor 3. Electromagnetic waves (heat rays) are emitted from the heated susceptor 3, and these heat the wafer 4.
上記電磁波のうち波長が例えば12μｍと長い電磁波を
符号６で示し、波長が例えば５μｍと短い電磁波を符号
７で示す。Among the electromagnetic waves, an electromagnetic wave having a long wavelength of, for example, 12 μm is indicated by reference numeral 6, and an electromagnetic wave having a short wavelength of, for example, 5 μm is indicated by reference numeral 7.
両電磁波6,7は共にウエハ４の加熱に寄与する。 Both electromagnetic waves 6 and 7 contribute to heating of the wafer 4.
また、電磁波６はウエハ４に対する透過能の強い領域
に属する電磁波であり、電磁波７はウエハ４に対する透
過能の弱い領域に属する電磁波である。Further, the electromagnetic wave 6 is an electromagnetic wave belonging to a region having a high transmittance to the wafer 4, and the electromagnetic wave 7 is an electromagnetic wave belonging to a region having a low transmittance to the wafer 4.
また、サセプタ４の材質であるインコネルの発光スペ
クトルは第３図中破線III aで示す如くであり、反射率
は第４図中破線IV aで示す如くである。The emission spectrum of Inconel, which is the material of the susceptor 4, is as shown by a broken line IIIa in FIG. 3, and the reflectance is as shown by a broken line IVa in FIG.
電磁波７は、ウエハ４に対する透過能が弱く、ウエハ
４内を伝播中にウエハ４に吸収される。The electromagnetic wave 7 has a low transmittance to the wafer 4 and is absorbed by the wafer 4 while propagating in the wafer 4.
電磁波６は、ウエハ４に対する透過能が強く、ウエハ
４に吸収されにくく、ウエハ４内を伝播してウエハ４の
上面に到る。ここで、Al配線５により反射され、再びウ
エハ４内を下に向って伝播し、サセプタ３に到る。The electromagnetic wave 6 has a high transmittance to the wafer 4, is hardly absorbed by the wafer 4, and propagates inside the wafer 4 to reach the upper surface of the wafer 4. Here, the light is reflected by the Al wiring 5, propagates downward in the wafer 4 again, and reaches the susceptor 3.
ここで、第４図に示すように、インコネルの反射率は
高い。このため、電磁波６の殆どはサセプタ３の上面で
反射して、再びウエハ４内を上方に伝播する。Here, as shown in FIG. 4, the reflectivity of Inconel is high. Therefore, most of the electromagnetic wave 6 is reflected on the upper surface of the susceptor 3 and propagates upward in the wafer 4 again.
電磁波６は上記の動作を何回か繰り返えす。 The electromagnetic wave 6 repeats the above operation several times.
上記の電磁波7,6により、ウエハ４が加熱される。 The wafer 4 is heated by the electromagnetic waves 7 and 6 described above.
特に電磁波６がウエハ４内を繰り返して往復伝播する
動きをすることにより、ウエハ４は中央部の温度が高く
なり易く、ウエハ４の上面の温度分布は、第２図中破線
II aで示す如くになり、中央部の温度が周辺部の温度よ
り、約50度も高い温度となってしまう。In particular, as the electromagnetic wave 6 repeatedly moves back and forth within the wafer 4, the temperature of the wafer 4 tends to increase at the central portion, and the temperature distribution on the upper surface of the wafer 4 is indicated by a broken line in FIG.
As shown by IIa, the temperature at the center becomes higher by about 50 degrees than the temperature at the periphery.
このため、絶縁膜８を成長させる際の成長温度がウエ
ハ４の周辺部と中央部とで相当異なることになり、絶縁
膜８は膜質がウエハ４内で異なるものとなってしまう。For this reason, the growth temperature when growing the insulating film 8 is considerably different between the peripheral portion and the central portion of the wafer 4, and the film quality of the insulating film 8 is different in the wafer 4.
また、温度の高い中央部では、ショットキー接合を形
成するメタルと配線メタルとが合金化し、ショットキー
バリアのバリアハイトが変化してしまう。Further, in the central part where the temperature is high, the metal forming the Schottky junction and the wiring metal are alloyed, and the barrier height of the Schottky barrier changes.
これらにより、同じウエハのうちでも周辺部より切り
出した半導体装置と中央部から切り出した半導体装置と
では特性に差が出来、半導体装置の歩留りは低いものと
なる。As a result, even in the same wafer, there is a difference in characteristics between the semiconductor device cut out from the peripheral portion and the semiconductor device cut out from the central portion, and the yield of the semiconductor device becomes low.
本発明はウエハの加熱温度のウエハ全面に亘る均一化
を図ることができる半導体製造装置のウエハ加熱装置を
提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a wafer heating apparatus of a semiconductor manufacturing apparatus which can make the heating temperature of the wafer uniform over the entire surface of the wafer.
本発明は、ウェハの加熱に寄与する電磁波の波長領域
のうち、該ウェハに対する透過能が強い波長領域の電磁
波に対して吸収帯を有し、且つ、該ウェハの加熱に寄与
する電磁波に対して低い反射率を有するSiC製のフィル
タを、ヒータとウェハとの間に備えて構成したものであ
る。The present invention has an absorption band for an electromagnetic wave in a wavelength region having a strong transmittance to the wafer, out of a wavelength region of the electromagnetic wave contributing to heating of the wafer, and, for an electromagnetic wave contributing to heating of the wafer. The filter is configured such that a SiC filter having a low reflectance is provided between the heater and the wafer.
上記SiC製のフィルタは、ウエハ内を一往復して伝播
してきた電磁波を吸収して反射を抑え、電磁波のウエハ
内の伝播を一往復にとどめる。The SiC filter absorbs the electromagnetic wave that has propagated back and forth in the wafer and suppresses reflection, and stops the propagation of the electromagnetic wave in the wafer in one round trip.
またこのSiC製のフィルタは、これより出る電磁波の
うちウエハに対する透過能が強い波長領域の電磁波の強
さが低い。In addition, the SiC filter has a low intensity of electromagnetic waves in a wavelength region having a high transmittance to a wafer among the electromagnetic waves emitted from the filter.
第１図は本発明の一実施例になる半導体製造装置10を
示す。図中、第６図に示す構成部分と同一部分には同一
符号を付し、その説明は省略する。FIG. 1 shows a semiconductor manufacturing apparatus 10 according to one embodiment of the present invention. In the figure, the same components as those shown in FIG. 6 are denoted by the same reference numerals, and description thereof will be omitted.
11はSiC製サセプタであり、フィルタとして機能す
る。Reference numeral 11 denotes a SiC susceptor, which functions as a filter.
ここで、SiCの特性について説明する。 Here, the characteristics of SiC will be described.
SiCの発光スペクトルは、第３図中実線IIIで示す如く
であり、ウエハ４に対する透過能の強い領域の電磁波６
の波長近傍に、インコネルの発光スペクトルに比べて発
光強度の弱い部分（吸収帯）12を有する。この吸収帯12
はハッチングを付して示す。The emission spectrum of SiC is as shown by the solid line III in FIG.
In the vicinity of the wavelength, there is a portion (absorption band) 12 where the emission intensity is weaker than the emission spectrum of Inconel. This absorption band 12
Is indicated by hatching.
また、第４図中実線IVで示すように、SiCの電磁波に
対する反射率はインコネルのそれに比べて低い。Further, as shown by a solid line IV in FIG. 4, the reflectance of SiC for electromagnetic waves is lower than that of Inconel.
SiCの上記の特性により、電磁波は以下のように動作
する。Due to the above characteristics of SiC, electromagnetic waves operate as follows.
ヒータ２がサセプタ11を加熱し、加熱されたサセプタ
11は、第３図中実線IIIで示すスペクトルの電磁波を出
す。The heater 2 heats the susceptor 11, and the heated susceptor
Numeral 11 emits an electromagnetic wave having a spectrum indicated by a solid line III in FIG.
インコネル製サセプタ３に比べて、電磁波６の強さは
低い。The strength of the electromagnetic wave 6 is lower than that of the susceptor 3 made of Inconel.
第１図に示すように、電磁波７はウエハ４内を伝播中
にウエハ４に吸収される。As shown in FIG. 1, the electromagnetic wave 7 is absorbed by the wafer 4 while propagating in the wafer 4.
電磁波６はウエハ４に殆ど吸収されずにウエハ４内を
伝播し、ウエハ４の上面に到る。ここで電磁波６はAl配
線５により反射され、再びウエハ４内を下に向って伝播
し、サセプタ11に達する。The electromagnetic wave 6 is hardly absorbed by the wafer 4, propagates through the wafer 4, and reaches the upper surface of the wafer 4. Here, the electromagnetic wave 6 is reflected by the Al wiring 5, propagates downward inside the wafer 4 again, and reaches the susceptor 11.
サセプタ11の上記の特性によりして、電磁波６は符号
6aで示すようにサセプタ11に吸収され、反射は殆どしな
い。Due to the above characteristics of the susceptor 11, the electromagnetic wave 6
As shown by 6a, the light is absorbed by the susceptor 11 and hardly reflected.
このように、電磁波６は元々強さが低く、且つウエハ
４内の伝播も一回の往復に限られるため、Al配線５が存
在していてもウエハ４の中央部の周辺部に比べての温度
上昇は抑えられる。As described above, since the electromagnetic wave 6 is originally low in intensity and propagation in the wafer 4 is limited to one round trip, even if the Al wiring 5 is present, the electromagnetic wave 6 is smaller than the peripheral portion at the center of the wafer 4. Temperature rise is suppressed.
第２図は、ウエハ４を同じ条件で加熱し、このときの
ウエハ４の上面の温度分布を測定した結果を示す。FIG. 2 shows the result of measuring the temperature distribution on the upper surface of the wafer 4 at this time by heating the wafer 4 under the same conditions.
実線IIは、SiC製のサセプタ11を使用した場合の測定
結果、破線II aはインコネル製のサセプタ３を使用した
ときの測定結果である。A solid line II is a measurement result when the susceptor 11 made of SiC is used, and a broken line IIa is a measurement result when the susceptor 3 made of Inconel is used.
ウエハ４の上面の中央部の温度は周辺部の温度より約
15度高いだけにとどまり、ウエハ４の上面の温度分布の
均一性は従来に比べて大幅に改善される。The temperature at the center of the upper surface of the wafer 4 is about
Only 15 degrees higher, the uniformity of the temperature distribution on the upper surface of the wafer 4 is greatly improved as compared with the conventional case.
この結果、絶縁膜が気相成長されるときの成長温度が
ウエハ４の全面に亘って略等しくなり、絶縁膜13は膜質
がウエハ４の全面に亘って均一とされた状態で形成され
る。As a result, the growth temperature when the insulating film is vapor-phase grown becomes substantially equal over the entire surface of the wafer 4, and the insulating film 13 is formed in a state where the film quality is uniform over the entire surface of the wafer 4.
またウエハ４の中央における、ショットキー接合を形
成するメタルと配線メタルとの合金化が抑制され、ショ
ットキーバリアのバイアハイトは変化しない。In addition, alloying between the metal forming the Schottky junction and the wiring metal at the center of the wafer 4 is suppressed, and the via height of the Schottky barrier does not change.
従って、ウエハ４より切り出した半導体装置は切り出
し位置に関係なく、特性が均一化し、半導体装置の歩留
りが向上する。Therefore, the characteristics of the semiconductor device cut out from the wafer 4 are uniform regardless of the cutting position, and the yield of the semiconductor device is improved.
第５図は本発明の別の実施例になる半導体製造装置20
を示す。FIG. 5 shows a semiconductor manufacturing apparatus 20 according to another embodiment of the present invention.
Is shown.
この装置20は、ウエハ４を宙に浮かすように保持し、
上記SiC製サセプタ11に代えてSiC製フィルタ21をヒータ
２とウエハ４との間に設けた構成であり、第１図に示す
構成部分と同一部分には同一符号を付す。This apparatus 20 holds the wafer 4 so as to float in the air,
This is a configuration in which a SiC filter 21 is provided between the heater 2 and the wafer 4 instead of the SiC susceptor 11, and the same components as those shown in FIG.
ヒータ２がフィルタ21を加熱し、加熱されたフィルタ
21がウエハ４に向って第３図中実線IIIで示すスペクト
ル電磁波を出す。The heater 2 heats the filter 21 and the heated filter
21 emits a spectrum electromagnetic wave toward the wafer 4 as indicated by a solid line III in FIG.
第５図に示すように、電磁波７はウエハ４内に入り、
ウエハ４内を伝播中にウエハ４に吸収される。As shown in FIG. 5, the electromagnetic wave 7 enters the wafer 4 and
The light is absorbed by the wafer 4 while propagating in the wafer 4.
電磁波６は、ウエハ４に向かい、ウエハ４に入る。ウ
エハ４内に入った電磁波６は、ウエハ４に殆ど吸収され
ずにウエハ４内を伝播し、ウエハ４の上面に到る。ここ
で電磁波６はAl配線５により反射され、再びウエハ４内
を下に向って伝播し、ウエハ４の下面に到り、ウエハ４
により抜け出してフィルタ21に到り、ここで符号6bで示
すようにフィルタ21に吸収され、反射は殆どせず、電磁
波６のウエハ４内の伝播は一回の往復に限られる。The electromagnetic waves 6 travel toward the wafer 4 and enter the wafer 4. The electromagnetic wave 6 that has entered the wafer 4 is hardly absorbed by the wafer 4, propagates through the wafer 4, and reaches the upper surface of the wafer 4. Here, the electromagnetic wave 6 is reflected by the Al wiring 5, propagates down the inside of the wafer 4 again, reaches the lower surface of the wafer 4, and
As a result, the light reaches the filter 21 and is absorbed by the filter 21 as indicated by reference numeral 6b, hardly reflected, and the propagation of the electromagnetic wave 6 in the wafer 4 is limited to one round trip.
従って、ウエハ４上にAl配線層５が存在していても、
ウエハ４の上面の温度分布は、第２図中実線IIと同様に
均一化され上記と同様の効果が得られる。Therefore, even if the Al wiring layer 5 exists on the wafer 4,
The temperature distribution on the upper surface of the wafer 4 is made uniform in the same manner as the solid line II in FIG. 2, and the same effect as above can be obtained.
なお、上記サセプタ11及びフィルタ21の材質として
は、ウエハ４の加熱に寄与する電磁波であってウエハ４
に対する透過能が強い波長領域に吸収帯を有し、且つ上
記電磁波に対する反射率が低い材質であればよく、SiC
に限らず、例えばSiO2,Al2O3,TiO2,BeO,Ce2O3等でもよ
く、同様の効果が得られる。The material of the susceptor 11 and the filter 21 is an electromagnetic wave that contributes to the heating of the wafer 4,
Any material that has an absorption band in a wavelength region that has a high transmittance to light and has a low reflectivity to the electromagnetic wave may be used.
The present invention is not limited to this, and may be, for example, SiO 2 , Al 2 O 3 , TiO 2 , BeO, Ce 2 O 3, etc., and the same effect can be obtained.
以上説明した様に、本発明によれば、SiC製のフィル
タを使用することにより、サセプタ又はフィルタより出
る電磁波のうちウエハに対する透過能が強い波長領域の
電磁波の強さが元々低く、且つ当該電磁波のウエハ内の
伝播は一回の往復にとどまるため、ウエハの中央部の周
辺部に対する温度上昇を抑えることが出来、ウエハ全面
に亘る温度分布の均一化を図ることが出来る。As described above, according to the present invention, by using the filter made of SiC, the intensity of the electromagnetic wave in the wavelength region where the transmittance to the wafer among the electromagnetic waves emitted from the susceptor or the filter is originally low, and the electromagnetic wave Propagation in the wafer is only one reciprocation, so that the temperature rise in the peripheral portion of the central portion of the wafer can be suppressed, and the temperature distribution over the entire surface of the wafer can be made uniform.
この結果、ウエハ上に絶縁膜を形成する場合に、膜質
の均一化を図ることが出来、またバリアハイトが変化し
てしまうこともなく、然して、ウエハから切り出す半導
体装置の特性が均一化し、歩留りを向上できる。As a result, when an insulating film is formed on a wafer, the film quality can be made uniform, and the barrier height does not change, but the characteristics of the semiconductor device cut out from the wafer become uniform, and the yield increases. Can be improved.
第１図は本発明の一実施例になる半導体製造装置の概略
構成図、 第２図は第１図の装置の加熱特性を示す図、 第３図はSiC製サセプタの発光スペクトルをインコネル
製サセプタの発光スペクトルと対比して示す図、 第４図はSiC製サセプタの反射率をインコネル製サセプ
タの反射率と対比して示す図、 第５図は本発明の別の実施例になる半導体製造装置の概
略構成図、 第６図は従来の半導体製造装置の１例の概略構成図であ
る。 図において、 ２はヒータ、 ４はウエハ、 ５はAl配線、 ６はウエハに対する透過能が強い電磁波、 ７はウエハに対する透過能が弱い電磁波、 10,20はウエハ加熱装置、 11はSiC製サセプタ、 12は吸収帯、 13は絶縁膜、 21はSiC製フィルタ を示す。FIG. 1 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to one embodiment of the present invention, FIG. 2 is a view showing heating characteristics of the apparatus of FIG. 1, and FIG. 3 is a graph showing an emission spectrum of a SiC susceptor by an Inconel susceptor. FIG. 4 is a diagram showing the reflectance of an SiC susceptor in comparison with the reflectance of an Inconel susceptor, and FIG. 5 is a semiconductor manufacturing apparatus according to another embodiment of the present invention. FIG. 6 is a schematic configuration diagram of an example of a conventional semiconductor manufacturing apparatus. In the figure, 2 is a heater, 4 is a wafer, 5 is an Al wiring, 6 is an electromagnetic wave having a strong transmittance to the wafer, 7 is an electromagnetic wave having a weak transmittance to the wafer, 10, 20 is a wafer heating device, 11 is a susceptor made of SiC, 12 indicates an absorption band, 13 indicates an insulating film, and 21 indicates a SiC filter.
Claims (1)
のうち、該ウェハに対する透過能が強い波長領域の電磁
波に対して吸収帯（12）を有し、且つ、該ウェハの加熱
に寄与する電磁波に対して低い反射率を有するSiC製の
フィルタ（11、12）を、ヒータとウェハとの間に備えて
なる構成としたことを特徴とする半導体製造装置。An absorption band (12) for an electromagnetic wave in a wavelength region having a high transmittance to the wafer among wavelength regions of the electromagnetic wave contributing to heating of the wafer and contributing to heating of the wafer. A semiconductor manufacturing apparatus, comprising: a filter (11, 12) made of SiC having a low reflectance for electromagnetic waves, provided between a heater and a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63021276A JP2771811B2 (en) | 1988-02-02 | 1988-02-02 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63021276A JP2771811B2 (en) | 1988-02-02 | 1988-02-02 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01196837A JPH01196837A (en) | 1989-08-08 |
| JP2771811B2 true JP2771811B2 (en) | 1998-07-02 |
Family
ID=12050603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63021276A Expired - Fee Related JP2771811B2 (en) | 1988-02-02 | 1988-02-02 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2771811B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7303615B2 (en) * | 2018-08-28 | 2023-07-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58186950A (en) * | 1982-04-26 | 1983-11-01 | Toshiba Corp | Manufacture of thin film semiconductor device |
| JPS60729A (en) * | 1983-06-17 | 1985-01-05 | Fujitsu Ltd | Resistance heating device |
| JPS6045014A (en) * | 1983-08-23 | 1985-03-11 | Toshiba Corp | Growth of thin film single crystal |
| JPS62216215A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Laser annealing stage |
-
1988
- 1988-02-02 JP JP63021276A patent/JP2771811B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01196837A (en) | 1989-08-08 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |