JP2744836B2 - Method for manufacturing reflecting mirror for synchrotron radiation - Google Patents
Method for manufacturing reflecting mirror for synchrotron radiationInfo
- Publication number
- JP2744836B2 JP2744836B2 JP2117355A JP11735590A JP2744836B2 JP 2744836 B2 JP2744836 B2 JP 2744836B2 JP 2117355 A JP2117355 A JP 2117355A JP 11735590 A JP11735590 A JP 11735590A JP 2744836 B2 JP2744836 B2 JP 2744836B2
- Authority
- JP
- Japan
- Prior art keywords
- reflecting mirror
- film
- synchrotron radiation
- substrate
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Optical Elements Other Than Lenses (AREA)
- Laminated Bodies (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はシンクロトロン放射光用反射ミラーの製造方
法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a reflecting mirror for synchrotron radiation.
近年、シンクロトロン放射光(SOR)の応用研究が急
速な進歩を遂げている。その応用分野は、半導体製造、
医学、化学及び物理と広範囲にわたっている。また、SO
R装置の大型化、高エネルギー化も著しくなってきてい
る。この結果、SOR用の反射ミラーに対する要求もます
ます厳しくなってきている。例えば、反射ミラーには高
い寸法精度が要求されている。In recent years, applied research on synchrotron radiation (SOR) has made rapid progress. Its application fields are semiconductor manufacturing,
Extensive in medicine, chemistry and physics. Also SO
The increase in the size and energy of the R device has also become remarkable. As a result, the demands on the reflection mirror for SOR are becoming more and more severe. For example, reflection mirrors are required to have high dimensional accuracy.
従来、この用途の反射ミラーは、カーボン基材、SiC
基材などの耐熱性セラミック基材の全面にCVD法によりS
iC膜をコーティングした後、その反射面を光学研磨し、
更に反射面に金属膜を蒸着することにより製造されてい
る。Conventionally, reflection mirrors for this application have been made of carbon base material, SiC
S on the entire surface of heat-resistant ceramic substrate such as substrate by CVD method
After coating the iC film, the reflective surface is optically polished,
Further, it is manufactured by depositing a metal film on the reflection surface.
しかし、従来の製造方法で高い寸法精度を有する反射
ミラーを得ようとすると、加工に長時間を要するという
問題があった。これは以下のような理由による。However, if a conventional manufacturing method is used to obtain a reflecting mirror having high dimensional accuracy, there is a problem that a long time is required for processing. This is for the following reasons.
すなわち、従来は基材の全面にCVD法によりSiC膜をコ
ーティングしている。この場合、基材の稜の部分では2
方向からSiC膜が成長するため、SiC膜が盛り上がって形
成される。このため、6面研削が必要となり、しかもSi
C膜の膜厚のばらつきが大きいので、高い寸法精度を得
ようとすると研磨工程に長時間を要する。That is, conventionally, the entire surface of the base material is coated with the SiC film by the CVD method. In this case, 2 at the edge of the substrate
Since the SiC film grows from the direction, the SiC film rises and is formed. For this reason, six-surface grinding is required, and Si
Since the thickness variation of the C film is large, it takes a long time for the polishing process to obtain high dimensional accuracy.
本発明は前記課題を解決するためになされたものであ
り、シンクロトロン放射光用反射ミラーの加工時間を短
縮できる方法を提供することを目的とする。The present invention has been made to solve the above-described problem, and has as its object to provide a method capable of shortening the processing time of a reflecting mirror for synchrotron radiation.
[課題を解決するための手段] 本発明のシンクロトロン放射光用反射ミラーの製造方
法は、耐熱性セラミック基材の反射面となる面以外にカ
ーボン製のマスク材を形成した後、CVD法によりSiC膜を
コーティングしてその反射面を光学研磨し、更に反射面
に金属膜を蒸着することを特徴とする。[Means for Solving the Problems] In the method for manufacturing a reflecting mirror for synchrotron radiation according to the present invention, a carbon mask material is formed on a surface other than a reflection surface of a heat-resistant ceramic base material, and then a CVD method is performed. It is characterized in that a SiC film is coated, its reflection surface is optically polished, and a metal film is deposited on the reflection surface.
本発明において、熱セラミック基材としてはカーボン
基材、SiC基材などを用いることができる。ただし、SiC
基材の方がSiC膜との熱膨張係数が差が小さいので好ま
しい。In the present invention, a carbon substrate, a SiC substrate, or the like can be used as the thermal ceramic substrate. However, SiC
The substrate is preferable because the difference in thermal expansion coefficient between the substrate and the SiC film is small.
本発明において、基材の反射面となる面以外に形成さ
れるマスク材としては、耐熱性セラミック基材に嵌合さ
れて反射面以外の面を覆う形状のものが挙げられる。本
発明で用いられるカーボン製のマスク材の表面でのSiC
膜の成長速度は、SiC基材などのセラミック基材の表面
におけるSiC膜の成長速度と比較して1/3以下である。In the present invention, examples of the mask material formed on a surface other than the surface serving as the reflection surface of the substrate include those having a shape fitted to the heat-resistant ceramic substrate and covering the surfaces other than the reflection surface. SiC on the surface of the carbon mask material used in the present invention
The growth rate of the film is 1/3 or less as compared with the growth rate of the SiC film on the surface of the ceramic substrate such as the SiC substrate.
本発明において、金属膜としては、例えばCr下地層の
上にPt又はAuを形成したものが挙げられる。また、特定
波長のX線を反射するために、Pt又はAuの代わりに、N
i、Co、Cu、Fe、Re、Zn、W、Mn、Ta、Auなどの重元素
とBe、Mg、Sn、Sb、V、Teなどの軽元素とを組み合わせ
た多層膜を用いてもよい。なお、Cr下地層は必ずしも設
ける必要はない。In the present invention, examples of the metal film include a film in which Pt or Au is formed on a Cr underlayer. Also, in order to reflect X-rays of a specific wavelength, instead of Pt or Au, N
A multilayer film in which heavy elements such as i, Co, Cu, Fe, Re, Zn, W, Mn, Ta, and Au and light elements such as Be, Mg, Sn, Sb, V, and Te may be used. . Note that the Cr underlayer is not necessarily provided.
本発明の方法を用いれば、従来の方法と異なり、基材
の稜の部分でSiC膜が盛り上がって形成されることがな
くなるので、研磨工程の時間を短縮することができる。According to the method of the present invention, unlike the conventional method, the SiC film is not formed by being raised at the ridge of the base material, so that the time of the polishing step can be reduced.
以下、本発明の実施例を図面を参照して説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
まず、第1図に示すように、長さ12cm、幅10cm、厚さ
2.5cmのSiCからなる基材1にカーボン製のマスク材4を
嵌合し、反射面となる面以外を覆った。この基材1の表
面にCVD法によりSiC膜2をコーティングした。その結
果、反射面となる面には膜厚約100μmのSiC膜2が成長
した。また、基材1とマスク材4との間には隙間がある
ため、基材1の側面にも薄いSiC膜が成長した。基材1
側面のSiC膜は反射面側で膜厚約10μmであり、下方に
向かって徐々に薄くなり、裏面側ではSiC膜はほとんど
成長していなかった。First, as shown in Fig. 1, length 12cm, width 10cm, thickness
A mask material 4 made of carbon was fitted to a substrate 1 made of 2.5 cm of SiC to cover a surface other than a surface to be a reflection surface. The surface of the substrate 1 was coated with a SiC film 2 by a CVD method. As a result, a SiC film 2 having a thickness of about 100 μm was grown on the surface serving as the reflection surface. Further, since there is a gap between the base material 1 and the mask material 4, a thin SiC film also grew on the side surface of the base material 1. Substrate 1
The SiC film on the side surface had a thickness of about 10 μm on the reflection surface side, gradually became thinner downward, and the SiC film hardly grew on the back surface side.
この基材1の反射面となる面に形成されたSiC膜2を
光学研磨(1面研削)した。この光学研磨に要する時間
は約6時間であり、従来の場合(6面研削)の約1/7の
時間であった。SiC膜2を光学研磨は1面研削で充分で
あった。The SiC film 2 formed on the surface to be the reflection surface of the substrate 1 was optically polished (one surface grinding). The time required for the optical polishing was about 6 hours, which was about 1/7 of the conventional case (six-surface grinding). Optical polishing of the SiC film 2 was sufficient by one-side grinding.
次に、第2図に示すように、反射面のSiC膜2の表面
にイオンプレーティング法によりCr下地層とPtとからな
る膜厚0.1μmの金属膜3を形成して反射ミラーを作製
した。Next, as shown in FIG. 2, a 0.1 μm-thick metal film 3 made of a Cr underlayer and Pt was formed on the surface of the reflective SiC film 2 by an ion plating method to produce a reflection mirror. .
以上詳述したように本発明の方法を用いれば、短い加
工時間で、寸法精度の高いシンクロトロン放射光用反射
ミラーを製造することができ、その工業的価値は大き
い。As described above in detail, by using the method of the present invention, a reflecting mirror for synchrotron radiation with high dimensional accuracy can be manufactured in a short processing time, and its industrial value is great.
第1図及び第2図は本発明の実施例におけるシンクロト
ロン放射光用反射ミラーの製造方法を工程順に示す断面
図である。 1……基材、2……SiC膜、3……金属膜、4……マス
ク材。1 and 2 are sectional views showing a method of manufacturing a reflecting mirror for synchrotron radiation according to an embodiment of the present invention in the order of steps. 1 ... substrate, 2 ... SiC film, 3 ... metal film, 4 ... mask material.
フロントページの続き (72)発明者 菅井 照夫 東京都新宿区西新宿1丁目26番2号 東 芝セラミックス株式会社内 (72)発明者 保立 四郎 東京都新宿区西新宿1丁目26番2号 東 芝セラミックス株式会社内 (56)参考文献 特開 昭62−113104(JP,A)Continued on the front page (72) Inventor Teruo Sugai 1-26-1 Nishi Shinjuku, Shinjuku-ku, Tokyo Toshiba Ceramics Co., Ltd. (72) Inventor Shiro Hotate 1-26-1-2 Nishi Shinjuku, Shinjuku-ku, Tokyo Toshiba Inside Ceramics Co., Ltd. (56) References JP-A-62-113104 (JP, A)
Claims (1)
外にカーボン製のマスク材を形成した後、CVD法によりS
iC膜をコーティングしてその反射面を光学研磨し、更に
反射面に金属膜を蒸着することを特徴とするシンクロト
ロン放射光用反射ミラーの製造方法。1. A method of forming a mask material made of carbon on a surface of a heat-resistant ceramic substrate other than a surface serving as a reflection surface, and forming the mask material by CVD.
A method for manufacturing a reflecting mirror for synchrotron radiation, comprising coating an iC film, optically polishing the reflecting surface thereof, and depositing a metal film on the reflecting surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2117355A JP2744836B2 (en) | 1990-05-07 | 1990-05-07 | Method for manufacturing reflecting mirror for synchrotron radiation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2117355A JP2744836B2 (en) | 1990-05-07 | 1990-05-07 | Method for manufacturing reflecting mirror for synchrotron radiation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0413103A JPH0413103A (en) | 1992-01-17 |
JP2744836B2 true JP2744836B2 (en) | 1998-04-28 |
Family
ID=14709637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2117355A Expired - Fee Related JP2744836B2 (en) | 1990-05-07 | 1990-05-07 | Method for manufacturing reflecting mirror for synchrotron radiation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2744836B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100255730B1 (en) | 1997-12-15 | 2000-05-01 | 이민화 | Ultrasonic color doppler system for displaying artery and vein |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62113104A (en) * | 1985-11-13 | 1987-05-25 | Hitachi Ltd | Mirror for high luminance radiant light |
-
1990
- 1990-05-07 JP JP2117355A patent/JP2744836B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0413103A (en) | 1992-01-17 |
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