JP2723540B2 - Low pressure CVD equipment - Google Patents
Low pressure CVD equipmentInfo
- Publication number
- JP2723540B2 JP2723540B2 JP63143956A JP14395688A JP2723540B2 JP 2723540 B2 JP2723540 B2 JP 2723540B2 JP 63143956 A JP63143956 A JP 63143956A JP 14395688 A JP14395688 A JP 14395688A JP 2723540 B2 JP2723540 B2 JP 2723540B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- pressure cvd
- boat
- thermal conductivity
- low pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は減圧CVD装置に関する。Description: TECHNICAL FIELD The present invention relates to a low pressure CVD apparatus.
従来、この種の減圧CVD装置として、石英製のボート
に半導体基板を水平に保持し、このような基板を縦方向
に積み重ね減圧雰囲気中に置き、上方から膜成長のガス
を導入し、下方に排出するように構成したものがある。Conventionally, as a low pressure CVD apparatus of this kind, a semiconductor substrate is held horizontally on a quartz boat, such substrates are stacked vertically, placed in a reduced pressure atmosphere, and a gas for film growth is introduced from above, and then downward. Some are configured to discharge.
上述した従来の減圧CVD装置は、半導体基板を保持す
るボートに石英を用い、半導体基板を並べて膜成長のた
めのガスを流し半導体基板にCVD膜を付けていた。しか
し、半導体基板のCVD膜の成長速度は、温度とガスの流
れ方に依存し半導体基板上に均一に膜を付けるための手
段としては、半導体基板を並べる際半導体基板と半導体
基板の平行度を均一にし温度を安定させてガスを層流に
流すしか方法がなく、実際には半導体基板の周辺部の方
が中央部よりガスの流れが激しく、膜が厚く付きやすい
という欠点があった。In the above-described conventional low-pressure CVD apparatus, quartz was used for a boat for holding semiconductor substrates, and semiconductor substrates were arranged side by side and a gas for film growth was flown to attach a CVD film to the semiconductor substrates. However, the growth rate of the CVD film on the semiconductor substrate depends on the temperature and the gas flow, and as a means for uniformly depositing the film on the semiconductor substrate, the parallelism between the semiconductor substrate and the semiconductor substrate when arranging the semiconductor substrates is considered. There is no other way but to make the gas flow in a laminar flow with uniformity and stable temperature. Actually, there is a disadvantage that the gas flows more strongly in the peripheral portion of the semiconductor substrate than in the central portion, and the film tends to be thicker.
本発明の減圧CVD装置は、半導体基板を水平に保持
し、これを縦方向に積み重ね減圧雰囲気中でCVD膜を形
成させる減圧CVD装置において、半導体基板を保持する
ボートを熱伝導率もしくは輻射係数の違う２種の材料を
組み合わせて構成したことを特徴とする。The reduced pressure CVD apparatus of the present invention holds a semiconductor substrate horizontally, vertically stacks the semiconductor substrate, and forms a CVD film in a reduced pressure atmosphere.In a reduced pressure CVD apparatus, a boat holding the semiconductor substrate has a thermal conductivity or a radiation coefficient. It is characterized by being constituted by combining two different materials.
次に、本発明について図面を参照して説明する。第１
図は本発明の一実施例の縦断面図、第２図は第１図のボ
ート部分の拡大断面図である。石英管（チューブ）１の
中で半導体基板２は、ボート３上に縦方向に積載されて
いる。CVD成長用のガスはガス導入口４より流され半導
体基板上に膜を付けガス排気口５より排出される構造と
なっている。このボート３は第２図に示されているよう
に、SICセラミック板部６とそれを受ける石英部７によ
って構成されガスが回り込みやすい半導体基板の周辺部
は熱伝導率及び熱輻射係数の小さい石英と接し、一方ガ
スが回り込みにくい中央部は熱伝導率熱輻射係数の大き
いSICと接する構造となっている。そのため半導体基板
のガスが回り込みにくい中央部を周囲より高温にする事
が出来て膜の厚さが中央部と周辺部でバラつくのを防ぐ
事が出来る。Next, the present invention will be described with reference to the drawings. First
FIG. 2 is a longitudinal sectional view of one embodiment of the present invention, and FIG. 2 is an enlarged sectional view of the boat portion of FIG. A semiconductor substrate 2 is vertically loaded on a boat 3 in a quartz tube (tube) 1. A gas for CVD growth flows from a gas inlet 4 to form a film on a semiconductor substrate and is discharged from a gas outlet 5. As shown in FIG. 2, the boat 3 is composed of an SIC ceramic plate portion 6 and a quartz portion 7 for receiving the SIC ceramic plate portion. The central part where the gas is hard to flow around is in contact with the SIC having a large thermal conductivity and heat radiation coefficient. Therefore, the temperature of the central portion where the gas of the semiconductor substrate is difficult to flow around can be made higher than that of the surroundings, and the thickness of the film can be prevented from varying between the central portion and the peripheral portion.
第３図は本発明の他の実施例のボート部分の拡大断面
図である。半導体基板２はボートの石英部７により点で
支えられていてボートとは接触せずに浮いている。そし
て石英部７の中央にはSICセラミック板６が付けられて
いるが該一実施例とは違い、このセラミック板６は石英
板部７の上に乗っておらず貫通した構造となっている。
この実施例ではSICセラミック板６が貫通した構造にな
っているために上下間の温度が熱伝導率のよいSICセラ
ミック板６により均一に保てる利点がある。FIG. 3 is an enlarged sectional view of a boat portion according to another embodiment of the present invention. The semiconductor substrate 2 is supported at points by the quartz portion 7 of the boat, and floats without contacting the boat. An SIC ceramic plate 6 is provided at the center of the quartz portion 7, but unlike this embodiment, the ceramic plate 6 does not ride on the quartz plate portion 7 and has a structure penetrating therethrough.
In this embodiment, since the SIC ceramic plate 6 has a penetrated structure, there is an advantage that the temperature between the upper and lower sides can be kept more uniform by the SIC ceramic plate 6 having good thermal conductivity.
以上説明したように本発明は、半導体基板を保持する
ボートに熱伝導率もしくは輻射係数の違う２種の材質を
組み合わせる事により、熱伝導率もしくは輻射係数の大
きい材料に接している部分の半導体基板は温度が高くな
り、熱伝導率もしくは輻射係数が小さい材料に接してい
る部分は温度が低くなるという原理によって半導体基板
の温度をコントロールし、それにより半導体基板のCVD
成長膜の面内均一性を良く出来るという効果がある。As described above, the present invention combines a boat holding a semiconductor substrate with two types of materials having different thermal conductivity or radiation coefficient to thereby provide a portion of the semiconductor substrate in contact with a material having a large thermal conductivity or radiation coefficient. Controls the temperature of the semiconductor substrate by the principle that the temperature increases, and the temperature in the area in contact with the material with low thermal conductivity or radiation coefficient decreases, thereby controlling the temperature of the semiconductor substrate.
There is an effect that the in-plane uniformity of the grown film can be improved.
第１図は本発明の一実施例の縦断面図、第２図は第１図
のボート部分の拡大断面図、第３図は本発明の他の実施
例のボート部分の拡大断面図である。 １……石英チューブ、２……半導体基板、３……ボー
ト、４……ガス導入口、５……ガス排出口、６……ボー
トのSICセラミック板部、７……ボートの石英部。FIG. 1 is a longitudinal sectional view of one embodiment of the present invention, FIG. 2 is an enlarged sectional view of a boat portion of FIG. 1, and FIG. 3 is an enlarged sectional view of a boat portion of another embodiment of the present invention. . 1 ... Quartz tube, 2 ... Semiconductor substrate, 3 ... Boat, 4 ... Gas inlet, 5 ... Gas outlet, 6 ... SIC ceramic plate part of boat, 7 ... Quartz part of boat.
Claims (1)
に積み重ね減圧雰囲気中でCVD膜を形成させる減圧CVD装
置において、半導体基板を保持するボードを熱伝導率も
しくは熱輻射係数の違う２種の材料を組み合わせて構成
するものであって、半導体基板の周辺部に面する部分を
熱伝導率もしくは熱輻射係数の小さい材料で構成し、中
央部を熱伝導率もしくは熱輻射係数の大きい材料で構成
したことを特徴とする減圧CVD。In a low-pressure CVD apparatus for holding a semiconductor substrate horizontally and stacking the semiconductor substrates in a vertical direction to form a CVD film in a reduced-pressure atmosphere, a board holding the semiconductor substrate has different thermal conductivity or heat radiation coefficient. A material that combines various types of materials, with the portion facing the peripheral portion of the semiconductor substrate made of a material having a small thermal conductivity or thermal radiation coefficient, and a material having a large thermal conductivity or thermal radiation coefficient at the center. Low pressure CVD characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63143956A JP2723540B2 (en) | 1988-06-10 | 1988-06-10 | Low pressure CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63143956A JP2723540B2 (en) | 1988-06-10 | 1988-06-10 | Low pressure CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01312823A JPH01312823A (en) | 1989-12-18 |
| JP2723540B2 true JP2723540B2 (en) | 1998-03-09 |
Family
ID=15350963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63143956A Expired - Fee Related JP2723540B2 (en) | 1988-06-10 | 1988-06-10 | Low pressure CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2723540B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5743967A (en) * | 1995-07-13 | 1998-04-28 | Semiconductor Energy Laboratory Co. | Low pressure CVD apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61267317A (en) * | 1985-05-21 | 1986-11-26 | Toshiba Corp | Boat for vertical type diffusion furnace |
-
1988
- 1988-06-10 JP JP63143956A patent/JP2723540B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01312823A (en) | 1989-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |