JP2720930B2 - Quantum thin film device with grid - Google Patents
Quantum thin film device with gridInfo
- Publication number
- JP2720930B2 JP2720930B2 JP16806888A JP16806888A JP2720930B2 JP 2720930 B2 JP2720930 B2 JP 2720930B2 JP 16806888 A JP16806888 A JP 16806888A JP 16806888 A JP16806888 A JP 16806888A JP 2720930 B2 JP2720930 B2 JP 2720930B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- grid
- quantum
- electrons
- atomic layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 40
- 239000000463 material Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 8
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 230000005476 size effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 34
- 239000013078 crystal Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000002109 crystal growth method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/158—Structures without potential periodicity in a direction perpendicular to a major surface of the substrate, i.e. vertical direction, e.g. lateral superlattices, lateral surface superlattices [LSS]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、電子や光の制御素子として用いるグリッド
入り量子薄膜素子に関する。Description: TECHNICAL FIELD The present invention relates to a grid-containing quantum thin film element used as a control element for electrons and light.
分子線エピタキシー法や有機金属CVD法等の薄膜成長
技術を利用した新しい概念のデバイスとして、例えば量
子井戸レーザー、量子箱レーザー、量子細線レーザー
（トランジスタ）等の量子薄膜を用いた素子が提案され
ている。Devices using quantum thin films such as quantum well lasers, quantum box lasers, and quantum wire lasers (transistors) have been proposed as devices with new concepts using thin film growth technologies such as molecular beam epitaxy and metal organic chemical vapor deposition. I have.
量子井戸レーザーは、活性層を電子のド・ブロイ波長
λと同程度（約100Å程度）の厚さの量子薄膜とするこ
とにより、厚さ方向に電子を量子的に閉じ込め、電子が
膜圧に沿った２次元方向にのみ自由粒子としてふるまう
ことができるようにしたものである。この量子井戸レー
ザーの特徴は、膜圧等の構造制御により発振波長の制御
が可能であり、優れた発振閾値電流特性が得られること
である。In a quantum well laser, the active layer is a quantum thin film with a thickness about the same as the de Broglie wavelength λ of the electrons (about 100 °), so that the electrons are quantum confined in the thickness direction and the electrons are reduced in film thickness. It can behave as free particles only in the two-dimensional directions along it. The feature of this quantum well laser is that the oscillation wavelength can be controlled by controlling the structure such as the film pressure, and excellent oscillation threshold current characteristics can be obtained.
上記の如く薄膜の厚さ方向（ｚ）に電子を量子的に閉
じ込めた量込井戸レーザーに対して、さらに膜厚に沿っ
た２次元方向（x,y）も電子を量子的に閉じ込めたのが
量子箱レーザーであり、これらの一方に電子を量子的に
閉じ込めたのが量子細線レーザーである。In contrast to the quantum well laser in which electrons are quantum confined in the thickness direction (z) of the thin film as described above, the electrons are also quantum confined in the two-dimensional direction (x, y) along the film thickness. Are quantum box lasers, and quantum wire lasers have quantum electrons confined in one of them.
ところで、上記の量子薄膜を用いたデバイスを実現す
るためには、量子細線や箱の寸法を細かくする必要があ
る。その寸法としては、数100Å以下、通常は500Å以下
の結晶構造にすることが望ましいが、従来の電子ビーム
や微細加工では、このようなデバイスを作製することは
難しかった。そこで、ペトロフは特別な結晶成長方法を
用いて極く自然に上記の如きデバイスを作製する方法を
提案した。By the way, in order to realize a device using the above quantum thin film, it is necessary to make the dimensions of the quantum wires and the box fine. It is desirable that the crystal structure has a crystal structure of several hundreds of mm or less, usually 500 mm or less. However, it has been difficult to fabricate such a device by a conventional electron beam or fine processing. Therefore, Petrov has proposed a method for fabricating such a device very naturally using a special crystal growth method.
第３図は２次元ステップ構造の例を示す図、第４図は
周期的なステップ構造の作製方法を説明するための図、
第５図は結晶成長方法を用いた量子井戸デバイスの作製
方法を説明するための図、第６図は縦型に組成の異なる
結晶を形成した量子井戸デバイスの例を示す図である。
図中、21基板、22は薄膜、23と24は障壁、25は原子層を
示す。FIG. 3 is a view showing an example of a two-dimensional step structure, FIG. 4 is a view for explaining a method of manufacturing a periodic step structure,
FIG. 5 is a diagram for explaining a method of manufacturing a quantum well device using a crystal growth method, and FIG. 6 is a diagram showing an example of a quantum well device in which crystals having different compositions are formed vertically.
In the figure, 21 substrate, 22 is a thin film, 23 and 24 are barriers, and 25 is an atomic layer.
第４図において、基板21は、例えばGaAsの結晶を示
し、これを結晶の或る特定の方位から特定の角度φで研
磨すると、図示の如き周期的なステップ構造が得られ
る。これは、○からなる原子層が構成されているとする
と、点線の○の原子が研磨により削り取られるため、原
子層の厚みに相当するステップ構造が形成されることに
よる。つまり、１原子が部分的に研磨されることはない
から、部分的に研磨に引っ掛かる部分（点線の○）は削
り取られることになり、原子単位で段差ができることに
なる。従って、研磨する角度によってステップ幅は変化
し、角度φが大きくなる程狭く、逆に角度が小さくなる
程広くなる。例えば角度φとステップ幅Λでは、 のような関係が得られる。また、研磨の方向によって第
３図に示す２次元のステップ構造を形成することもでき
る。In FIG. 4, the substrate 21 is, for example, a GaAs crystal, and when this is polished from a certain specific orientation of the crystal at a specific angle φ, a periodic step structure as shown in the figure is obtained. This is because, assuming that the atomic layer composed of the circles is formed, the atoms represented by the dotted circles are removed by polishing, so that a step structure corresponding to the thickness of the atomic layer is formed. That is, since one atom is not partially polished, a portion which is partially caught by polishing (dotted circle) is cut off, and a step is formed in atomic units. Therefore, the step width changes depending on the polishing angle, and becomes narrower as the angle φ becomes larger, and becomes wider as the angle becomes smaller. For example, for an angle φ and a step width 、, The following relationship is obtained. Further, a two-dimensional step structure shown in FIG. 3 can be formed depending on the polishing direction.
そこで、このようにして作製された基板21に、第５図
に示すように材料Ａ、材料Ｂを堆積化してゆくと、縦型
に異なる組成の結晶をつくってゆくことができる。すな
わち、まず、材料Ａを数原子分堆積化すると、ステップ
の隅では下と横の２面で結合するため、この隅の部分か
ら順に結晶ができる。このようにして第６図に示すよう
な電子閉じ込め層としての障壁23、24間に薄膜の原子層
25を形成することができる。Therefore, when the materials A and B are deposited on the substrate 21 thus manufactured as shown in FIG. 5, crystals having different compositions can be formed vertically. That is, first, when the material A is deposited for several atoms, the corners of the steps are bonded on the lower and horizontal surfaces, and crystals are formed in order from the corners. Thus, a thin atomic layer is formed between the barriers 23 and 24 as an electron confinement layer as shown in FIG.
25 can be formed.
しかしながら、上記の如き結晶では、例えば材料Ａの
上にさらに同じ材料Ａを30〜40原子層にわたって堆積化
する必要があるが、なかなか同じ材料の上に何層もの原
子層を載せることができず、堆積化の制御性を高くしな
いと積層が困難であるという問題がある。However, in such a crystal as described above, for example, the same material A needs to be further deposited over 30 to 40 atomic layers on the material A, but it is difficult to place many atomic layers on the same material. If the controllability of the deposition is not improved, there is a problem that the lamination is difficult.
本発明は、上記の問題を解決するものであって、積層
効果を高め量子サイズによる制御効果が得られるグリッ
ド入り量子薄膜素子を提供することを目的とするもので
ある。An object of the present invention is to solve the above-mentioned problem, and an object of the present invention is to provide a grid-containing quantum thin film element that enhances a lamination effect and obtains a control effect by a quantum size.
そのために本発明は、量子サイズ効果を示す薄膜から
なる量子薄膜素子において、数10原子層の薄膜と該薄膜
の両側に障壁を形成すると共に、前記薄膜はその膜圧方
向の中心付近に周囲よりポテンシャルが高くなる数原子
層の異種材料で等間隔に形成したグリッドを有すること
を特徴とするものである。Therefore, the present invention provides a quantum thin film element comprising a thin film exhibiting a quantum size effect, in which a thin film of several tens of atomic layers and barriers are formed on both sides of the thin film, and the thin film is located near its center in the direction of the film pressure. It is characterized by having a grid formed of several atomic layers of dissimilar materials having a high potential and formed at equal intervals.
本発明のグリッド入り量子薄膜素子では、薄膜内部に
異種材料で構成したグリッドを等間隔で挿入すると、こ
のグリッドのポテンシャルが高くなるので、１又は数原
子層で数10原子層の異種材料による結晶とほぼ同じ効果
を得ることができる。In the quantum thin film device with a grid according to the present invention, when grids made of different materials are inserted into the thin film at equal intervals, the potential of this grid increases, so that one or several atomic layers and several tens of atomic layers of different materials are used. Almost the same effect can be obtained.
以下、図面を参照しつつ実施例を説明する。 Hereinafter, embodiments will be described with reference to the drawings.
第１図は本発明に係るグリッド入り量子薄膜素子の１
実施例構成を示す図である。図中、１は原子層、２はグ
リッド、３と４は障壁を示す。FIG. 1 shows a grid thin film device 1 according to the present invention.
It is a figure showing an example composition. In the figure, 1 indicates an atomic layer, 2 indicates a grid, and 3 and 4 indicate barriers.
第１図において、原子層１は、30〜40原子層からな
り、その中心付近に異なる組成のグリッド２を有してい
る。グリッド２は、量子力学的な効果が起きる程度に近
い間隔で配置され、原子層１内では自由に電子が動ける
がこの電子の動きに制約を与えるものである。すなわ
ち、原子層１では、グリッド２におけるポテンシャルが
高いためグリッド２のない領域に電子がたまり、グリッ
ド２によって電子を動きやすくするか否か、電子をため
込むか否かをきめている。すなわち、第１図に示す構造
では、電子が図示の白い領域でグリッド２に沿ったｘ方
向に流れやすく、グリッド２に直角な方向すなわちｙ方
向に流れにくくなるので量子細線となる。しかも、その
程度はグリッド２の幅や厚さによって変わる。なお、障
壁３、４は、電子閉じ込め層を形成するものである。In FIG. 1, an atomic layer 1 is composed of 30 to 40 atomic layers, and has a grid 2 having a different composition near the center thereof. The grids 2 are arranged at intervals close to the extent that a quantum mechanical effect occurs. Electrons can move freely in the atomic layer 1, but restrict the movement of the electrons. That is, in the atomic layer 1, since the potential in the grid 2 is high, electrons are accumulated in a region without the grid 2, and it is determined whether the grid 2 makes the electrons easy to move or whether the electrons are accumulated. That is, in the structure shown in FIG. 1, electrons easily flow in the x direction along the grid 2 in the white area shown in the figure, and it is difficult for electrons to flow in the direction perpendicular to the grid 2, that is, in the y direction. Moreover, the degree varies depending on the width and thickness of the grid 2. The barriers 3 and 4 form an electron confinement layer.
この原子層１は、第６図に示した従来の構造を比較的
単純にしたものであり、その製作は、障壁３の上にまず
同じ材料で結晶を成長させ、中心付近で１〜２層程度の
厚さで異種材料を入れる。そしてまたその上に同じ材料
で結晶を成長させ、所定の厚さに原子層を積み上げてゆ
く。例えば30〜40原子層があるとすると、その中に１〜
２層程度の異種原子層を入れるだけで大きな効果が得ら
れる。先に第５図及び第６図で述べたように30〜40原子
層を異種の材料により縦型に結晶を積み上げてゆくこと
は非常に難しいが、これに比べると、第１図に示すよう
に中心付近にのみ１〜２原子層のグリッド２を入れるこ
とははるかに容易である。このグリッド２は、その周囲
に比べてポテンシャルが高く、例えば１層だけでも50〜
100meV程度のポテンシャルに該当するので、電子の閉じ
込め効果が大きく、30〜40原子層を異種の材料により縦
型に積み上げた結晶構造に匹敵する効果が期待できる。
さらに、このグリッド２は、その幅や厚さを変えること
により特性を自由に制御することができる。This atomic layer 1 is a relatively simple structure of the conventional structure shown in FIG. 6, and is manufactured by first growing a crystal of the same material on the barrier 3 and then forming one or two layers near the center. A different material is put in a thickness of the order. Then, a crystal is grown thereon with the same material, and the atomic layers are stacked to a predetermined thickness. For example, if there are 30 to 40 atomic layers,
A great effect can be obtained only by adding about two different atomic layers. As previously described in FIGS. 5 and 6, it is very difficult to vertically stack crystals of 30 to 40 atomic layers with different materials, but in comparison with this, as shown in FIG. It is much easier to insert a grid 2 of 1-2 atomic layers only near the center. This grid 2 has a higher potential than its surroundings.
Since this corresponds to a potential of about 100 meV, the effect of confining electrons is large, and an effect comparable to a crystal structure in which 30 to 40 atomic layers are vertically stacked with different materials can be expected.
Further, the characteristics of the grid 2 can be freely controlled by changing its width and thickness.
なお、上記の実施例では、１方向にのみグリッドを設
けたが、ｘ方向とｙ方向、ｘ方向とｚ方向、ｙ方向とｚ
方向のように２方向（メッシュ状）にグリッドを設けた
り、さらには多層にして或いは３次元の各方向にグリッ
ドを設けるように構成してもよい。In the above embodiment, the grid is provided only in one direction, but the x direction and the y direction, the x direction and the z direction, and the y direction and the z direction are provided.
Grids may be provided in two directions (mesh shape) such as directions, or a multi-layered or three-dimensional grid may be provided.
第２図は上記のグリッド入り量込薄膜素子を使用した
量込薄膜デバイスの構成例を示す図であり、11と12は電
極、13はゲート、14はグリッド入り量子薄膜素子、15は
ｐ層、16はｎ層を示す。FIG. 2 is a diagram showing a configuration example of a thin-film device using the above-mentioned gridded thin-film element, wherein 11 and 12 are electrodes, 13 is a gate, 14 is a quantum thin-film element with a grid, and 15 is a p-layer. , 16 indicate an n-layer.
上記のグリッド入り量子薄膜素子は、第２図に示すよ
うな種々のデバイスに応用することができる。The grid-containing quantum thin film element described above can be applied to various devices as shown in FIG.
例えば、同図（ａ）に示すようにグリッド入り量子薄
膜素子14のグリッドと直角になる面に電極11、12を取り
付け、上面にゲート13を設けることによって量子細線状
のFETを構成することができる。また、同図（ｂ）に示
すように電極11、12、ゲート13の位置を変えることによ
ってゲート制御超格子に応用することができる。通常グ
リッドを横切る形では電流が流れにくいが、グリッドを
細くするとある程度の確率で電流が流れる。ゲート制御
超格子は、この性質を利用するものであり、電子の波長
と超格子の波長が合うとブラッグ反射で負性抵抗になっ
たり電流が流れないようになったりする。For example, as shown in FIG. 1A, the electrodes 11 and 12 are attached to the surface of the quantum thin film element 14 with the grid perpendicular to the grid, and the gate 13 is provided on the upper surface to form a quantum wire FET. it can. By changing the positions of the electrodes 11 and 12 and the gate 13 as shown in FIG. Normally, current does not easily flow across the grid, but when the grid is made thinner, current flows with a certain probability. The gate control superlattice utilizes this property, and when the wavelength of the electrons matches the wavelength of the superlattice, the resistance becomes negative or the current does not flow due to Bragg reflection.
さらにレーザやLED（発光ダイオード）に応用した例
を示したのが同図（ｃ）であり、ｐ層15とｎ層16との間
にグリッド入り量子薄膜素子14を配置している。グリッ
ド入り量子薄膜素子14では、電子が閉じ込められるだけ
にレーザやLEDに応用しても優れた特性が得られる。FIG. 2C shows an example of application to a laser or an LED (light emitting diode), in which a quantum thin film element with a grid 14 is arranged between a p-layer 15 and an n-layer 16. In the quantum thin film element 14 with a grid, excellent characteristics can be obtained even when applied to a laser or an LED because electrons are confined.
また、グリッド入り量子薄膜素子14では、電圧を加え
ると光の吸収計数の波長依存性が長波長側へシフトし、
量子箱ではこの吸収係数がステップ状ではなく離散的に
なるため、第２図（ｄ）に示すように構成して変調器や
光スイッチとしても応用することができ、いろいろな波
長域で違った形の変調ができる。Also, in the quantum thin film element 14 with a grid, when a voltage is applied, the wavelength dependence of the light absorption coefficient shifts to the longer wavelength side,
In a quantum box, the absorption coefficient becomes discrete instead of step-like, so that it can be configured as shown in FIG. 2 (d) and applied as a modulator or an optical switch, and different in various wavelength ranges. Shape modulation is possible.
第２図（ｅ）は赤外光の検出器に応用した構成例を示
している。グリッド入り量子薄膜素子14では、電子の閉
じ込め状態が定在波的な状態になる。従来の製造膜であ
ると膜に垂直な方向で定在波が立つが、メッシュにする
と、メッシュの方向にも定在波が立ち、膜に垂直なｚ方
向だけでなく膜面のxy方向にも定在波が立つ。定在波の
山が１つの状態と２つの状態との間に光が入ると、電子
の状態が移るという性質があるので、この性質を使うこ
とによって光検出器に応用することができる。従来は、
ｚ方向にしか定在波がなかったために、光を面に沿って
入れなければならなかったが、xy方向にも定在波が立
ち、垂直方向から光を入れてもxy方向にも定在波がある
ため、グリッド入り量子薄膜素子14では、その方向にも
変位して導電率に変化を起こす光検出器として使うこと
もできる。FIG. 2 (e) shows a configuration example applied to an infrared light detector. In the grid thin film element 14, the electron confinement state becomes a standing wave state. In the case of a conventional production film, a standing wave stands in the direction perpendicular to the film, but when it is made into a mesh, a standing wave also stands in the direction of the mesh, not only in the z direction perpendicular to the film but also in the xy direction of the film surface. Standing waves also rise. When the peak of the standing wave enters between one state and two states, the state of the electrons changes, and by using this property, it can be applied to a photodetector. conventionally,
Since there was only a standing wave in the z direction, light had to enter along the surface. Since there is a wave, the gridded quantum thin film element 14 can also be used as a photodetector that is displaced in that direction and changes the conductivity.
なお、本発明は、単層の量子薄膜の例について説明を
加えたが、上記の実施例に限定されるものではなく、量
子薄膜を複層化したものなど種々の変形が可能である。In the present invention, an example of a single-layer quantum thin film has been described. However, the present invention is not limited to the above embodiment, and various modifications such as a multilayer quantum thin film are possible.
以上の説明から明らかなように、本発明によれば、薄
膜内部に異種材料で構成したグリッドを等間隔で挿入
し、グリッドのポテンシャルを高くすることができるの
で、数原子数で数10原子層の異種材料による結晶と同じ
効果を得ることができる。しかも、グリッドの配置によ
って種々の制御が可能であり、その幅や厚さによって特
性を変えることができる。また、数原子層の積層でよい
ので、作製が容易になる。As is clear from the above description, according to the present invention, a grid composed of different materials can be inserted into the thin film at equal intervals, and the potential of the grid can be increased. The same effect as that of a crystal made of a different material can be obtained. In addition, various controls are possible by the arrangement of the grid, and the characteristics can be changed by the width and the thickness. In addition, since a stack of several atomic layers is sufficient, fabrication is facilitated.
第１図は本発明に係るグリッド入り量子薄膜素子の１実
施例構成を示す図、第２図はグリッド入り量子薄膜素子
を使用した量子薄膜デバイスの構成例を示す図、第３図
は２次元ステップ構造の例を示す図、第４図は周期的な
ステップ構造の作製方法を説明するための図、第５図は
結晶成長方法を用いた量子井戸デバイスの作製方法を説
明するための図、第６図は縦型に組成の異なる結晶を形
成した量子井戸デバイスの例を示す図である。 １……原子層、２……グリッド、３と４……障壁、11と
12……電極、13……ゲート、14……グリッド入り量子薄
膜素子、15……ｐ層、16……ｎ層。FIG. 1 is a view showing a configuration of an embodiment of a quantum thin film element with a grid according to the present invention, FIG. 2 is a view showing a configuration example of a quantum thin film device using a quantum thin film element with a grid, and FIG. FIG. 4 is a view showing an example of a step structure, FIG. 4 is a view for explaining a method for manufacturing a periodic step structure, FIG. 5 is a view for explaining a method for manufacturing a quantum well device using a crystal growth method, FIG. 6 is a diagram showing an example of a quantum well device in which crystals having different compositions are formed vertically. 1 ... atomic layer, 2 ... grid, 3 and 4 ... barrier, 11
12 ... electrode, 13 ... gate, 14 ... quantum thin film element with grid, 15 ... p layer, 16 ... n layer.
Claims (1)
膜素子において、数10原子層の薄膜と該薄膜の両側に障
壁を形成すると共に、前記薄膜はその膜厚方向の中心付
近に周囲よりポテンシャルが高くなる数原子層の異種材
料で等間隔に形成したグリッドを有することを特徴とす
るグリッド入り量子薄膜素子。In a quantum thin film device comprising a thin film exhibiting a quantum size effect, a thin film of several tens of atomic layers and barriers are formed on both sides of the thin film, and the thin film has a potential near its center in the thickness direction. 1. A quantum thin film element with a grid, comprising: grids formed of several atomic layers of dissimilar materials having a higher density and formed at equal intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16806888A JP2720930B2 (en) | 1988-07-06 | 1988-07-06 | Quantum thin film device with grid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16806888A JP2720930B2 (en) | 1988-07-06 | 1988-07-06 | Quantum thin film device with grid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0217648A JPH0217648A (en) | 1990-01-22 |
| JP2720930B2 true JP2720930B2 (en) | 1998-03-04 |
Family
ID=15861242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16806888A Expired - Fee Related JP2720930B2 (en) | 1988-07-06 | 1988-07-06 | Quantum thin film device with grid |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2720930B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2575901B2 (en) * | 1989-11-13 | 1997-01-29 | 新技術事業団 | Quantum structure with grid |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4591889A (en) * | 1984-09-14 | 1986-05-27 | At&T Bell Laboratories | Superlattice geometry and devices |
| JPH0752719B2 (en) * | 1986-10-09 | 1995-06-05 | 日本電信電話株式会社 | Method for manufacturing vertical semiconductor superlattice |
| JPH0680865B2 (en) * | 1987-03-27 | 1994-10-12 | 日本電気株式会社 | Semiconductor superlattice |
-
1988
- 1988-07-06 JP JP16806888A patent/JP2720930B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0217648A (en) | 1990-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2575901B2 (en) | Quantum structure with grid | |
| JPS61166081A (en) | Improvement in semiconductor device | |
| JP7366071B2 (en) | Optoelectronic device with diode array | |
| JP2003133649A5 (en) | ||
| JP3020529B2 (en) | Optically driven quantizer | |
| JPH0779158B2 (en) | Coupled quantum box structure semiconductor | |
| JP2692563B2 (en) | Semiconductor laser embedded structure | |
| JP2720930B2 (en) | Quantum thin film device with grid | |
| US5298108A (en) | Serpentine superlattice methods and devices | |
| JPH0669109B2 (en) | Optical semiconductor device | |
| JPS639388B2 (en) | ||
| JP3133933B2 (en) | Quantum structure with grid | |
| JPH03237784A (en) | Semiconductor element and manufacture thereof | |
| JPH04174585A (en) | Optical element having quantum well structure | |
| JP2793875B2 (en) | Composite quantum structure type semiconductor device | |
| JPH0590636A (en) | Quantum effect device | |
| JPH04100292A (en) | Semiconductor laser | |
| JPH02101784A (en) | Manufacture of quantum well fine wire and quantum well box and quantum well fine wire laser | |
| JP2004134501A (en) | Light emitting device and its manufacturing method | |
| JPS622684A (en) | Semiconductor laser | |
| JPS62273791A (en) | Manufacture of semiconductor quantum well laser | |
| JP3367546B2 (en) | Manufacturing method of resonant tunnel structure | |
| JP2591333B2 (en) | Semiconductor light emitting device | |
| JP2587404B2 (en) | Semiconductor superlattice structure | |
| JPS63179592A (en) | Semiconductor laser element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |